Relevant bibliographies by topics / Amorphization changes

Academic literature on the topic 'Amorphization changes'

Author: Grafiati
Published: 30 May 2022
Last updated: 31 May 2022

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Journal articles on the topic "Amorphization changes"

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Schaefer, Mark C., and Richard A. Haber. "Amorphization Mitigation in Boron-Rich Boron Carbides Quantified by Raman Spectroscopy." Ceramics 3, no. 3 (July 23, 2020): 297–305. http://dx.doi.org/10.3390/ceramics3030027.

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Boron carbide is an extremely hard and lightweight material used in armor systems. Upon impact above the Hugoniot elastic limit (HEL), boron carbide loses strength and suddenly fails. Atomistic models suggest that boron-rich boron carbides could mitigate amorphization. Such samples were processed, and indentation-induced amorphous zones were created throughout the boron-rich samples of varying degrees and were mapped with Raman spectroscopy to assess changes in the amorphization intensity. Boron-rich samples with a B/C ratio of 6.3 showed a large reduction in amorphization intensity compared to commonly used stoichiometric B4 C, in agreement with recent TEM results. Additionally, hardness trends were also noted as boron content is varied. This offers another pathway in which doping boron carbide can reduce amorphization.
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Biswas, A., G. K. Dey, A. J. Haq, D. K. Bose, and S. Banerjee. "A study of solid-state amorphization in Zr–30 at. % Al by mechanical attrition." Journal of Materials Research 11, no. 3 (March 1996): 599–607. http://dx.doi.org/10.1557/jmr.1996.0073.

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Elemental powders of zirconium and aluminum in the atomic ratio of 70:30 were mechanically alloyed in an attritor under argon atmosphere using zirconia balls as milling media. Samples have been taken out for characterization after different durations of milling. The process of alloying and resultant amorphization had been studied using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Scanning electron microscopy (SEM) was carried out to study the morphological changes occurring during repeated cold welding and breaking of the particles. Samples for TEM study were prepared by dispersing the mechanically attrited particles in the nickel foil by electrochemical codeposition. TEM study of the initial stages of milling revealed that localized structural changes precede the bulk amorphization process during mechanical alloying (MA). The sequence of phase evolution has been identified as (i) the formation of nanocrystalline supersaturated solid solution of aluminum in α-zirconium, (ii) amorphization of localized regions at powder interfaces, (iii) ordering of aluminum-rich regions in the metastable Zr3Al (DO19) phase, and, finally, (iv) bulk amorphization of the powders.
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Heera, V., F. Prokert, N. Schell, H. Seifarth, W. Fukarek, M. Voelskow, and W. Skorupa. "Density and structural changes in SiC after amorphization and annealing." Applied Physics Letters 70, no. 26 (June 30, 1997): 3531–33. http://dx.doi.org/10.1063/1.119223.

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Yamada, Kenjiro, and Carl C. Koch. "The influence of mill energy and temperature on the structure of the TiNi intermetallic after mechanical attrition." Journal of Materials Research 8, no. 6 (June 1993): 1317–26. http://dx.doi.org/10.1557/jmr.1993.1317.

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Mechanical attrition of intermetallic compound TiNi powder was carried out in two different ball mills and as a function of milling temperature. The microstructural changes with milling time were followed by x-ray diffraction, TEM, and DSC. The more energetic Spex shaker mill provided a higher degree of lattice strain and rapidly refined the grain size to the nanometer size regime. Amorphization was observed in the Spex mill with a linear increase in the milling time for amorphization with increasing milling temperature. No amorphization was observed in the less energetic vibratory mill, and the grain size saturated to a constant value of 15 nm after ≥60 h of milling. A critical grain size for the amorphization of 4–5 nm was estimated from the temperature dependent studies in the Spex mill. The grain boundary energy (706 mJ/m2), estimated from the vibratory mill experiments, and the above critical grain sizes (5 nm) for amorphization were used to calculate the enthalpy supplied by the nanocrystalline grain boundaries. The calculated value of 4.1 kJ/mol was comparable to the measured enthalpy of crystallization of 3.2 kJ/mol. It is concluded that the nanocrystalline grain boundary energy is responsible for driving the crystalline-to-amorphous phase transformation induced by mechanical attrition in TiNi.
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Ryder, Matthew R., Thomas D. Bennett, Chris S. Kelley, Mark D. Frogley, Gianfelice Cinque, and Jin-Chong Tan. "Tracking thermal-induced amorphization of a zeolitic imidazolate framework via synchrotron in situ far-infrared spectroscopy." Chemical Communications 53, no. 52 (2017): 7041–44. http://dx.doi.org/10.1039/c7cc01985h.

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Dome, Karina, Ekaterina Podgorbunskikh, Aleksey Bychkov, and Oleg Lomovsky. "Changes in the Crystallinity Degree of Starch Having Different Types of Crystal Structure after Mechanical Pretreatment." Polymers 12, no. 3 (March 12, 2020): 641. http://dx.doi.org/10.3390/polym12030641.

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This paper examines the effect of mechanical activation on the amorphization of starch having different types of crystalline structure (A-type corn starch; B-type potato starch; and C-type tapioca starch). Structural properties of the starches were studied by X-ray diffraction analysis. Mechanical activation in a planetary ball mill reduces the degree of crystallinity in proportion to pretreatment duration. C-type tapioca starch was found to have the highest degree of crystallinity. Energy consumed to achieve complete amorphization of the starches having different types of crystalline structure was measured. The kinetic parameters of the process (the effective rate constants) were determined. The rate constant and the strongest decline in the crystallinity degree after mechanical activation change in the following series: C-type starch, A-type starch, and B-type starch.
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Sugimoto, Yoshio. "Amorphization amid Fragmentation: Japanese Society 1990–2020." HISTORICKÁ SOCIOLOGIE 13, no. 2 (November 29, 2021): 17–30. http://dx.doi.org/10.14712/23363525.2021.15.

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This paper sketches the major sociological transformations of Japanese society of the last three decades, 1990–2020, which can be regarded as a crucial turning point in Japan’s history. It first examines the marked paradigm changes that have occurred in Japanese studies. The paper then endeavours to unravel how such alterations reflect the structural changes caused by the penetration of neoliberalism, the decline of the manufacturing industry, and the expansion of cultural capitalism. After illustrating how these forces have fragmented social relations, the paper ends with a description of how Japanese society is becoming increasingly amorphous in its social structures and value orientations. The paper attempts to cast the shifts of these three decades into relief against the background of the previous three decades, 1960–1989, when Japan enjoyed spectacular economic growth.
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Lagow, B. W., I. M. Robertson, L. E. Rehn, P. M. Baldo, J. J. Coleman, and T. S. Yeoh. "Compositional variation of microstructure in ion-implanted AlxGa1−xAs." Journal of Materials Research 15, no. 9 (September 2000): 2043–53. http://dx.doi.org/10.1557/jmr.2000.0293.

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The ion damage produced in alloys of AlxGa1−xAs (x = 0.6, 0.7, 0.8, and 0.85) by implantation at 77 K with Kr ions (500, 700, and 1500 keV) was studied by using Rutherford backscattering channeling and transmission electron microscopy. In addition, the accumulation of ion damage at 50 K was studied by performing the ion implantations in situ in the transmission electron microscope. In Al0.8Ga0.2As, damage accumulation at 77 K was independent of dose rate, indicating that dynamic annealing is not occurring at 77 K. The in situ studies demonstrated that planar defects are produced on warm-up from 50 K to room temperature, indicating that they are not the nucleation site for amorphization. The lower energy implantations revealed that amorphization initiated within the AlxGa1−xAs layer, showing that heterointerfaces are not required for amorphization. These results, along with the similarity of the room-temperature microstructures in the different alloys, imply that the amorphization mechanism is independent of Al content. It is proposed that the observed dependence of the amorphization dose on Al content is related to an increase in the number of cascade overlaps needed to initiate and to produce a continuous amorphous layer. A mechanism explaining the microstructural changes with composition, based on the thermal and physical properties of the alloy and on the distribution of energetic cascade events, is presented.
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Hvid, Mathias S., Henrik S. Jeppesen, Matteo Miola, Paolo Lamagni, Ren Su, Kirsten M. Ø. Jensen, and Nina Lock. "Structural changes during water-mediated amorphization of semiconducting two-dimensional thiostannates." IUCrJ 6, no. 5 (July 5, 2019): 804–14. http://dx.doi.org/10.1107/s2052252519006791.

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Owing to their combined open-framework structures and semiconducting properties, two-dimensional thiostannates show great potential for catalytic and sensing applications. One such class of crystalline materials consists of porous polymeric [Sn3S7 2−] n sheets with molecular cations embedded in-between. The compounds are denoted R-SnS-1, where R is the cation. Dependent on the cation, some R-SnS-1 thiostannates transition into amorphous phases upon dispersion in water. Knowledge about the fundamental chemical properties of the thiostannates, including their water stability and the nature of the amorphous products, has not yet been established. This paper presents a time-resolved study of the transition from the crystalline to the amorphous phase of two violet-light absorbing thiostannates, i.e. AEPz-SnS-1 [AEPz = 1-(2-aminoethyl)piperazine] and trenH-SnS-1 [tren = tris(2-aminoethyl)amine]. X-ray total scattering data and pair distribution function analysis reveal no change in the local intralayer coordination during the amorphization. However, a rapid decrease in the crystalline domain sizes upon suspension in water is demonstrated. Although scanning electron microscopy shows no significant decrease of the micrometre-sized particles, transmission electron microscopy reveals the formation of small particles (∼200–400 nm) in addition to the larger particles. The amorphization is associated with disorder of the thiostannate nanosheet stacking. For example, an average decrease in the interlayer distance (from 19.0 to 15.6 Å) is connected to the substantial loss of the organic components as shown by elemental analysis and X-ray photoelectron spectroscopy. Despite the structural changes, the light absorption properties of the amorphisized R-SnS-1 compounds remain intact, which is encouraging for future water-based applications of such materials.
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Usuki, Takeshi, Fumiaki Araki, Osamu Uemura, Yasuo Kameda, Toshio Nasu, and Masaki Sakurai. "Structure Changes during Amorphization of Ge-Se Alloys by Mechanical Milling." MATERIALS TRANSACTIONS 44, no. 3 (2003): 344–50. http://dx.doi.org/10.2320/matertrans.44.344.

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Dissertations / Theses on the topic "Amorphization changes"

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Ramzan, Muhammad. "Structural, Electronic and Mechanical Properties of Advanced Functional Materials." Doctoral thesis, Uppsala universitet, Materialteori, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205243.

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The search for alternate and renewable energy resources as well as the efficient use of energy and development of such systems that can help to save the energy consumption is needed because of exponential growth in world population, limited conventional fossil fuel resources, and to meet the increasing demand of clean and environment friendly substitutes. Hydrogen being the simplest, most abundant and clean energy carrier has the potential to fulfill some of these requirements provided the development of efficient, safe and durable systems for its production, storage and usage. Chemical hydrides, complex hydrides and nanomaterials, where the hydrogen is either chemically bonded to the metal ions or physiosorbed, are the possible means to overcome the difficulties associated with the storage and usage of hydrogen at favorable conditions. We have studied the structural and electronic properties of some of the chemical hydrides, complex hydrides and functionalized nanostructures to understand the kinetics and thermodynamics of these materials. Another active field relating to energy storage is rechargeable batteries. We have studied the detailed crystal and electronic structures of Li and Mg based cathode materials and calculated the average intercalation voltage of the corresponding batteries. We found that transition metal doped MgH2 nanocluster is a material to use efficiently not only in batteries but also in fuel-cell technologies. MAX phases can be used to develop the systems to save the energy consumption. We have chosen one compound from each of all known types of MAX phases and analyzed the structural, electronic, and mechanical properties using the hybrid functional. We suggest that the proper treatment of correlation effects is important for the correct description of Cr2AlC and Cr2GeC by the good choice of Hubbard 'U' in DFT+U method. Hydrogen is fascinating to physicists due to predicted possibility of metallization and high temperature superconductivity. On the basis of our ab initio molecular dynamics studies, we propose that the recent claim of conductive hydrogen by experiments might be explained by the diffusion of hydrogen at relevant pressure and temperature. In this thesis we also present the studies of phase change memory materials, oxides and amorphization of oxide materials, spintronics and sulfide materials.
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Дубова, О. А., and O. A. Dubova. "Причини стійкості структурного типу мови." Thesis, 2019. http://eir.nuos.edu.ua/xmlui/handle/123456789/4380.

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Дубова, О. А. Причини стійкості структурного типу мови / О. А. Дубова // Матеріали V міжнар. наук. конф. “Світ мови – світ у мові”. – Київ : Вид-во НПУ ім. М. П. Драгоманова, 2019. – С. 52–55.
Тривалий час у структурно-типологічних дослідженнях розглядалася проблема змін, що відбуваються в мовах світу. В основному ці зміни вбачали в аналітизації синтетичних мов.
For a long time, structural and typological studies have considered the problem of changes in the languages of the world. Basically, these changes were seen in the analysis of synthetic languages.
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Book chapters on the topic "Amorphization changes"

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Graaf, Anja vander, Mark A. Hollanders, Barend J. Thijsse, and Eric J. Mittemeijer. "Evidence for amorphization in Ni–Ti multilayers from electrical resistivity changes." In Rapidly Quenched Materials, 636–39. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89107-5.50153-2.

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Conference papers on the topic "Amorphization changes"

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Kolobov, A. V., A. I. Frenkel, P. Fons, T. Uruga, and J. Tominaga. "Changes in the local structure of Ge2Sb2Te5 upon reversible crystallization-amorphization." In Optical Data Storage. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/ods.2003.tue31.

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Arro, Christian, Mohammad Ibrahim Ahmad, and Nasr Bensalah. "Investigation on the effect of LiTFSI salt on PVDF-based Solid Polymer Electrolyte Membranes for Lithium-Ion Batteries." In Qatar University Annual Research Forum & Exhibition. Qatar University Press, 2021. http://dx.doi.org/10.29117/quarfe.2021.0042.

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Solid polymer electrolytes provide an alternative approach to providing improved safety whilst concurrently acting as a performance enhanced separator within Lithium-ion batteries (LIBs). This investigation studies the effects of Lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) salts in a polymer blend with Polyvinylidene fluoride (PVDF) and Poly (vinylpyrrolidone) (PvP) or Poly (4-vinylpyridine) (P4VP) on the performance of SPE membranes. Characterization by X-ray diffraction and Fourier-transform infrared spectroscopy highlights the changes due to LiTFSI, specifically amorphization. Performance studies with increasing LiTFSI showed improved thermal stability and the inhibition of PVDF endotherms on differential scanning calorimetry (DSC) profiles. The drawbacks of increased LiTFSI content were evident on the mechanical performance with decreased thresholds on the tensile strength. Inversely, improvements on the dielectric performance and conductivity were observed with excellent workability from a wide electrochemical stability window of 0.5 to 3.64 V vs. Li+/Li. Additionally, the incorporation of metal-fillers; Aluminum Oxide, Zirconia Oxide and Silicon Oxide was similarly studied.
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Braga, Stefania, Alessandro Cabrini, and Guido Torelli. "On the Effect of Cell Geometry on the Amorphization Process in Phase-Change Memories." In Circuits Technology Conference (IMPACT). IEEE, 2008. http://dx.doi.org/10.1109/impact.2008.4783801.

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Kieu, Khanh, Kenji Narumi, and Masud Mansuripur. "Investigation of crystallization and amorphization dynamics of phase-change thin films using sub-nanosecond laser pulses." In Contract Proceedings 2006, edited by Ryuichi Katayama and Tuviah E. Schlesinger. SPIE, 2007. http://dx.doi.org/10.1117/12.685208.

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Liu, Changlin, Jianning Chu, Jinyang Ke, Xiao Chen, Jianguo Zhang, Junfeng Xiao, and Jianfeng Xu. "Molecular Dynamic Simulation of Micro-Structured Diamond Tool in Silicon Carbide Cutting." In ASME 2020 15th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/msec2020-8250.

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Abstract Silicon carbide (SiC) is a material of great interest in many industrial applications. However, due to the hardness and brittleness nature, achieving ultra-precision machining of SiC is still challenging. In recent years, function surface with micro-structures has been introduced in cutting tool to suppress wear process. But the wear mechanism of the structured tool has not been revealed completely. Therefore, in present research, molecular dynamic simulations were conducted to investigate the influence of the micro-structure on the nano scale cutting process of 3C-SiC. The simulation results showed that the dislocation propagation in workpiece can be suppressed with a structured tool. The micro-structures have a great influence on the stress distribution in the workpiece subsurface. Furthermore, the abrasive wear of the structured tool is obvious smaller since the edges of the tool became blunt and the contact face between tool and workpiece changed to the close-packed plane of diamond. Moreover, the amorphization of the structured tool is effectively suppressed. This study contributes to the understanding of the details involved in the ultra-precision cutting of SiC.
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Adhikari, Nirmal, Phil Kaszuba, Gaitan Mathieu, Erik McCullen, Thom Hartswick, and Joe Myer. "A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy." In ISTFA 2020. ASM International, 2020. http://dx.doi.org/10.31399/asm.cp.istfa2020p0375.

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Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negative impact on these emerging technologies. Therefore, there exists a critical need for dopant profiling in the industry to support the latest technologies that use FinFETs as their fundamental building block [1]. Here, we discuss a novel sample preparation method for cross-sectional dopant profiling of FinFET devices. Our results show that the combination of low voltage (<500eV), shallow angle (~10 degree) ion milling, dry etching, and mechanical polishing provides an adequately smooth surface (Rq<5Å) and minimizes surface amorphization, thereby allowing a strong Scanning Capacitance Microscopy (SCM) signal representative of local active dopant (carrier) concentration. The strength of the dopant signal was found to be dependent upon mill rate, electrical contact quality, amorphous layer presence and SCM probe quality. This paper focuses on a procedure to overcome critical issues during sample preparation for dopant profiling in FinFETs.
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