Dissertations / Theses: 'Aluminum zinc oxide'

1

Shantheyanda, Bojanna P. "Characterization of aluminum doped zinc oxide thin films for photovoltaic applications." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4538.

Full text

Abstract:

Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO[sub]2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film. The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
ID: 028916634; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (M.S.)--University of Central Florida, 2010.; Includes bibliographical references (p. 74-76).
M.S.
Masters
School of Electrical Engineering and Computer Science
Engineering and Computer Science

APA, Harvard, Vancouver, ISO, and other styles

2

Zou, Elva Xin. "Sol-gel processed zinc oxide for third generation photovoltaics." Thesis, University of Oxford, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.559838.

Full text

Abstract:

This thesis presents an experimental study of the incorporation and optimization of sol-gel processed aluminum doped zinc oxide (AZO) thin films in solar cell devices. I first optimized the optoelectronic properties of AZO thin films by manipulating the dopant incorporation, choice of precursor chemicals and post deposition anneal treatments. Results showed that improved performance could be attributed to several factors, including improved charge carrier concentration, mobility and conductivity. AZO thin films with transmittance of over 90% and resistivity values of the order of 10-2 Ω•cm have been achieved. I also demonstrated the successful application of these AZO thin films in organic photovoltaics (OPV), to serve as an alternative to ITO electrodes. I demonstrated greater than 2-fold improvement in device efficiency through the modification of the front contact/polymer interface using zinc oxide buffer layers. This improved the charge selectivity of the electrodes and energy level alignment at the interface while reducing the recombination of separated charges and the device's series resistance. Finally, I showed that the efficiency of inverted ZnO/PbS quantum dots solar cells can be enhanced by optimizing the p-type PbS thickness, UV treating the n-type ZnO layer and exposing the devices in the dark to nitrogen. Both ZnO and AZO systems were studied, and efficiency enhancement were demonstrated for a range of Al content from 0 to O.4at.%.

APA, Harvard, Vancouver, ISO, and other styles

3

Adewole, Murthada Oladele. "Electrically Tunable Absorption and Perfect Absorption Using Aluminum Doped Zinc Oxide and Graphene Sandwiched in Oxides." Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc1404566/.

Full text

Abstract:

Understanding the fundamental physics in light absorption and perfect light absorption is vital for device applications in detector, sensor, solar energy harvesting and imaging. In this research study, a large area fabrication of Al-doped ZnO/Al2O3/graphene/Al2O3/gold/silicon device was enabled by a spin-processable hydrophilic mono-layer graphene oxide. In contrast to the optical properties of noble metals, which cannot be tuned or changed, the permittivity of transparent metal oxides, such as Al-doped ZnO and indium tin oxide, are tunable. Their optical properties can be adjusted via doping or tuned electrically through carrier accumulation and depletion, providing great advantages for designing tunable photonic devices or realizing perfect absorption. A significant shift of Raman frequency up to 360 cm-1 was observed from graphene in the fabricated device reported in this work. The absorption from the device was tunable with a negative voltage applied on the Al-doped ZnO side. The generated absorption change was sustainable when the voltage was off and erasable when a positive voltage was applied. The reflection change was explained by the Fermi level change in graphene. The sustainability of tuned optical property in graphene can lead to a design of device with less power consumption.

APA, Harvard, Vancouver, ISO, and other styles

4

Adewole, Murthada Oladele. "Electrically Tunable Absorption and Perfect Absorption Using Aluminum-Doped Zinc Oxide and Graphene Sandwiched in Oxides." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404566/.

Full text

Abstract:

Understanding the fundamental physics in light absorption and perfect light absorption is vital for device applications in detector, sensor, solar energy harvesting and imaging. In this research study, a large area fabrication of Al-doped ZnO/Al2O3/graphene/Al2O3/gold/silicon device was enabled by a spin-processable hydrophilic mono-layer graphene oxide. In contrast to the optical properties of noble metals, which cannot be tuned or changed, the permittivity of transparent metal oxides, such as Al-doped ZnO and indium tin oxide, are tunable. Their optical properties can be adjusted via doping or tuned electrically through carrier accumulation and depletion, providing great advantages for designing tunable photonic devices or realizing perfect absorption. A significant shift of Raman frequency up to 360 cm-1 was observed from graphene in the fabricated device reported in this work. The absorption from the device was tunable with a negative voltage applied on the Al-doped ZnO side. The generated absorption change was sustainable when the voltage was off and erasable when a positive voltage was applied. The reflection change was explained by the Fermi level change in graphene. The sustainability of tuned optical property in graphene can lead to a design of device with less power consumption.

APA, Harvard, Vancouver, ISO, and other styles

5

Huang, Bin. "Mechanical characterization of thin films /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?MECH%202005%20HUANG.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Chan, Ray Yu Wai. "Optical and electrical properties of aluminum-doped ZnO." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/174.

Full text

Abstract:

In the past few years, “green technologies and touch screen technologies for portable devices has came to hot topic in consumer market. The demand for transparent conducting oxides (TCO) is increasing continuously. Therefore, the potential replacement of indium tin oxide (ITO), which is the most widely used TCO in industry, by aluminum zinc oxide (AZO) draws much attention in order to solve the problem of shortage of ITO one day due to the consisting of rare-earth element. In this work, electrical and optical properties of AZO had been characterized according to different sputtering parameters such as oxygen contents, working pressures and gas flow ratios. Physics of electrical conduction and optical transparency of AZO films were revealed and analyzed in order to set up a more complete relationship between mechanism and performance. Meanwhile, a comparison of sensitivity between AZO and zinc oxide (ZnO) to sputtering environment had been made and behaviors of AZO at low temperature had been presented. Optimum sputtering conditions for AZO had been established as a function of sputtering time and the film resistivity reached down to 7 x 10-4 Ω·cm while film transmittance was above 85% when t = 140 mins having film thickness about 610 nm. Degradation of AZO had been investigated. Application of AZO in OLED fabrication had been carried out after film refinement and device performance had been given. Finally, simulation of OLED structure was done for better device performance

APA, Harvard, Vancouver, ISO, and other styles

7

Kuo, Fang-Ling. "Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc84233/.

Full text

Abstract:

ZnO has generated interest for flexible electronics/optoelectronic applications including transparent thin film transistors (TFTs). For this application, low temperature processes that simultaneously yield good electrical conductivity and optical transparency and that are compatible with flexible substrates such as plastic, are of paramount significance. Further, gate oxides are a critical component of TFTs, and must exhibit low leakage currents and self-healing breakdown in order to ensure optimal TFTs switching performance and reliability. Thus, the objective of this work was twofold: (1) develop an understanding of the processing-structure-property relationships of ZnO and high-κ BaTa2O6 and Al2O3 (2) understand the electronic defect structure of BaTa2O6 /ZnO and Al2O3/ZnO interfaces and develop insight to how such interfaces may impact the switching characteristics (speed and switching power) of TFTs featuring these materials. Of the ZnO films grown by atomic layer deposition (ALD), pulsed laser deposition (PLD) and magnetron sputtering at 100-200 °C, the latter method exhibited the best combination of n-type electrical conductivity and optical transparency. These determinations were made using a combination of photoluminescence, photoluminescence excitation, absorption edge and Hall measurements. Metal-insulator-semiconductor devices were then fabricated with sputtered ZnO and high-κ BaTa2O6 and Al2O3 and the interfaces of high-κ BaTa2O6 and Al2O3 with ZnO were analyzed using frequency dependent C-V and G-V measurements. The insulator films were deposited at room temperature by magnetron sputtering using optimized processing conditions. Although the Al2O3 films exhibited a lower breakdown strength and catastrophic breakdown behavior compared to BaTa2O6/ZnO interface, the Al2O3/ZnO interface was characterized by more than an order of magnitude smaller density of interface traps and interface trapped charge. The BaTa2O6 films in addition were characterized by a significantly higher concentration of fixed oxide charge. The transition from accumulation to inversion in the Al2O3 MIS structure was considerably sharper, and occurred at less than one tenth of the voltage required for the same transition in the BaTa2O6 case. The frequency dispersion effects were also noticeably more severe in the BaTa2O6 structures. XPS results suggest that acceptor-like structural defects associated with oxygen vacancies in the non-stoichiometric BaTa2O6 films are responsible for the extensive electrical trapping and poor high frequency response. The Al2O3 films were essentially stoichiometric. The results indicate that amorphous Al2O3 is better suited than BaTa2O6 as a gate oxide for transparent thin film transistor applications where low temperature processing is a prerequisite, assuming of course that the operation voltage of such devices is lower than the breakdown voltage. Also, the operation power for the devices with amorphous Al2O3 is lower than the case for devices with BaTa2O6 due to the smaller fixed oxide charges and interface trap density.

APA, Harvard, Vancouver, ISO, and other styles

8

Liu, Hanxiao. "Studies of efficient and stable organic solar cells based on aluminum-doped zine oxide transparent electrode." HKBU Institutional Repository, 2014. https://repository.hkbu.edu.hk/etd_oa/34.

Full text

Abstract:

Organic solar cells (OSCs) have attracted significant attention due to their potential of large area solution fabrication capability at low-cost. For bulk heterojunction (BHJ) OSCs, a thin film of transparent conducting indium tin oxide (ITO), coated on glass or flexible plastic substrate, is widely used as a front electrode. However, indium is not abundant on Earth. Its price has increased continuously over the past 10 years and will likely become an obstacle for the commercialization of OSCs at low cost. Aluminum-doped zinc oxide (AZO) is a promising ITO alternative due to its advantages of high electric conductivity, optical transparency, non-toxicity and low cost. However, reports on OSCs using AZO electrode are quite limited, due to the relatively lower power conversion efficiency (PCE) of AZO-based OCSs as compared to that of ITO-based OCSs. This work focused on studies of high performance AZO-based OSCs through AZO surface modification, absorption enhancement and process optimization. The optical and electronic properties of AZO film including transmittance, sheet resistance, surface morphology and surface work function were characterized. AZO-based OSCs with conventional and inverted structures were fabricated. It was found that AZO-based OSCs with inverted structure demonstrated superior performance than the ones with conventional structure. The inverted structure avoids the use of acidic PEDOT:PSS hole transporting layer, allows the improving of the absorbance of the OSCs and therefore its efficiency. An AZO front transparent cathode was used for application in high performance inverted BHJ OSCs. The photoactive layer consisted a blend of poly[[4,8-bis[(2- ethylhexyl)oxy] benzo [1,2-b:4,5-b'] dithiophene-2,6- diyl][3-fluoro- 2-[(2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl]](PTB7):3'H-Cyclopropa[8,25][5,6]fullerene- C70- D5h(6)-3'-butanoicacid, 3'-phenyl-, methyl ester (PC70BM). A structurally identical control OSC having an ITO front cathode was also fabricated for comparison studies. The structure of OSCs was optimized to achieving absorption enhancement in the active layer. AZO and ITO were modified with a 10 nm thick solution-processed ZnO interlayer to facilitate the efficient electron extraction. The results revealed that bilayer AZO/ZnO and the ITO/ZnO cathodes possess similar electron extraction property. AZO layer has a transparency cutoff at wavelength < 380 nm, results in a slight decrease in the short-circuit current density (JSC). However, the decrease in JSC is very small because the main energy of solar irradiation falls in the spectrum with wavelength > 380 nm. It shows that AZO-based OSCs have a promising PCE of 6.15%, which is slightly lower than that of a control ITO-based OSC (6.57%). AZO-based OSCs, however, demonstrate an obvious enhancement in the stability under an ultraviolet (UV)-assisted acceleration aging test. The significant enhancement in the stability of AZO-based OSCs arises from the tailored absorption of AZO electrode in wavelength < 380 nm, which serves as a UV filter to inhibit an inevitable degradation process in ITO-based OSCs due to the UV irradiation. In order to further investigate the degradation mechanism of OSCs under UV exposure, the change in charge collection characteristics of the OSCs made with ITO/ZnO and AZO/ZnO front cathode before and after UV exposure was examined. It was found that there was an obvious decrease in the charge extraction efficiency of ITO-based OSCs after UV exposure, while there was no observable change in the charge extraction efficiency of OSCs made with AZO/ZnO cathode under the same acceleration aging test. This work demonstrates that AZO is a suitable ITO alternative for application in OSCs, offering an improved device stability, comparable PCE and cell fabrication processes with an attractive commercial potential.

APA, Harvard, Vancouver, ISO, and other styles

9

Pant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Walker, Justin I. "Spectroscopic Analysis of Materials for Orthopaedic and Energy Conversion Applications." University of Akron / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=akron1226948982.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Rajala, Jonathan Watsell. "ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS." University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1480909959851349.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Gomes, Tiago Carneiro. "Estudo de transistores a base de óxido de zinco visando aplicações em sensor de radiação ultravioleta." Universidade Estadual Paulista (UNESP), 2018. http://hdl.handle.net/11449/154420.

Full text

Abstract:

Submitted by Tiago Carneiro Gomes (tiagogomes.prof@gmail.com) on 2018-06-30T16:46:33Z No. of bitstreams: 1 Gomes_T_C_tese_de_Doutorado.pdf: 5694002 bytes, checksum: 22bc5318ec502694cd7a4a087cec549f (MD5)
Approved for entry into archive by Lucilene Cordeiro da Silva Messias null (lubiblio@bauru.unesp.br) on 2018-07-02T19:06:37Z (GMT) No. of bitstreams: 1 gomes_tc_dr_bauru.pdf: 5485212 bytes, checksum: 22c574afd417cd26b3380c78e8274909 (MD5)
Made available in DSpace on 2018-07-02T19:06:37Z (GMT). No. of bitstreams: 1 gomes_tc_dr_bauru.pdf: 5485212 bytes, checksum: 22c574afd417cd26b3380c78e8274909 (MD5) Previous issue date: 2018-03-27
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Transistores de filme fino de ZnO, cujo desempenho depende das condições de preparação da camada de ZnO e do dielétrico de gate, tem sido aplicados como sensores de radiação ultravioleta (UV), visando prevenir danos à saúde da pele. Este trabalho tem como objetivo a fabricação de transistores de ZnO/Al2O3, mediante o estudo simultâneo dos parâmetros relacionados à preparação das camadas de ZnO e Al2O3, bem como, o de transistores com dielétrico padrão (ZnO/SiO2) submetidos a diferentes condições de funcionamento. Estes estudos visam encontrar quais condições viabilizam as aplicações dos transistores como sensor UV. Os experimentos englobam a deposição de filmes de ZnO tanto por sputtering de um alvo de ZnO, quanto por spray pirolise de uma solução de acetato de zinco. O dielétrico SiO2 foi obtido comercialmente, enquanto que o Al2O3 foi crescido por anodização. Os transistores foram fabricados em diversas condições, as quais foram estabelecidas pelos métodos de planejamento experimental Taguchi e Plackett-Burman. As respostas das caracterizações foram interpretadas por técnicas de estatística (ANOVA). Os resultados demonstram que Al2O3 otimizado exibe correntes de fuga de até 10E-10 A e constante dielétrica de ~13. A identificação dos parâmetros mais importantes na preparação de filmes de ZnO por spray pirólise, permitiram produzir transistores de ZnO/Al2O3 com mobilidades de ~4,5 cm2/Vs. Os sensores UV, usando transistores de ZnO/SiO2 apresentaram mobilidades de 0,1 a 12 cm2/Vs, e indicaram que a sensibilidade do sensor UV depende de parâmetros relacionados as condições de operação do dispositivo. Portanto, mostra-se que é fundamental a compreensão dos parâmetros envolvidos na produção dos dispositivos, pois isto permite refinar o processo na busca pela alta performance de dispositivos de baixo custo, bem como, otimizar os dispositivos para aplicações como sensor de radiação UV.
ZnO thin film transistors have been applied as ultraviolet (UV) radiation sensors in order to prevent damage to skin's health. However, the performance of ZnO transistor depends on the preparation conditions of both ZnO layer and gate dielectric. This work aims to produce and evaluate ZnO/Al2O3 transistors by studying simultaneously the parameters regarding the preparation of ZnO and Al2O3 layers, as well as the fabrication of ZnO transistors with a standard dielectric (ZnO/SiO2), under different conditions of working. It is intended to investigate the conditions to apply ZnO transistors as UV sensor. The experiments involve the deposition of ZnO films by sputter coating and spray pyrolysis of a solution of zinc acetate. SiO2 dielectric was commercially purchased, while Al2O3 was grown by anodization. The transistors were fabricated under different conditions, which were established by both experimental design Taguchi and Plackett-Burman methods. The responses from the characterization were interpreted by statistical techniques (ANOVA). The results showed that optimized Al2O3 films exhibit leakage current until 10E-10 A and dielectric constant of ~13. It was essential to identify the most important parameters regarding to preparation of ZnO films by pyrolysis spray in order to fabricate ZnO/Al2O3 transistors with mobilities of ~4,5 cm2/Vs. UV sensors based on ZnO/SiO2 transistors showed mobilities from 0,1 to 12 cm2/Vs and demonstrated that the sensitivity of the UV sensor depends on parameters related to working conditions. Therefore, it is of great importance the understanding of the parameters involved in the production of the devices, as it allows to refine the process in the search for the high performance of low cost materials as well as optimize the device for application as UV sensor.
FAPESP: 2014/13904-8

APA, Harvard, Vancouver, ISO, and other styles

13

Rabelo, Wagner Henrique. "Fonte de potência para síntese de filmes finos por pulverização catódica na faixa de khz." Universidade Estadual Paulista (UNESP), 2018. http://hdl.handle.net/11449/154742.

Full text

Abstract:

Submitted by Wagner Henrique Rabelo (wagner144@bol.com.br) on 2018-07-26T20:18:44Z No. of bitstreams: 1 MESTRADO - WAGNER RABELO - VERSÃO FINAL.pdf: 3489307 bytes, checksum: 98e6a7b1b48eed69e255358e3a62fdd9 (MD5)
Approved for entry into archive by Lucilene Cordeiro da Silva Messias null (lubiblio@bauru.unesp.br) on 2018-07-30T12:45:51Z (GMT) No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5)
Made available in DSpace on 2018-07-30T12:45:51Z (GMT). No. of bitstreams: 1 rabelo_mh_me_bauru.pdf: 3537069 bytes, checksum: 6434660c8d96cc051a92066c85136ebc (MD5) Previous issue date: 2018-05-28
O avanço das técnicas de deposição de filmes finos sobre as superfícies dos materiais tem permitido agregar valor e dar novas funcionalidades aos produtos. Atualmente, os filmes finos de óxido de estanho dopado com índio (ITO) têm encontrado grande aplicação no mercado. Entretanto, devido à pouca disponibilidade do índio na natureza e aos altos custos envolvidos na sua aquisição, elementos alternativos estão sendo estudados para sua substituição. Nesse contexto, destaca-se o óxido de zinco dopado com alumínio (AZO) como um promissor substituto, devido às características de elevada transmissividade, baixa resistividade e band gap da ordem de 3,37 eV, que permitem sua aplicação na síntese de filmes finos semicondutores. Com base no exposto, neste trabalho, foi projetado e desenvolvido o protótipo de uma fonte amplificadora de potência (FAP) de corrente alternada (AC) em baixa frequência, operando entre 15 a 40 kHz, responsável por iniciar e sustentar o campo elétrico utilizado para a geração do plasma. Esta FAP foi utilizada para a deposição de filmes finos de (AZO) por meio da técnica de magnetron sputtering. A análise das características morfológicas, ópticas e elétricas dos filmes de AZO produzidos neste estudo resultaram em uma transmitância superior a 80%, energia de band gap de 3,82 eV, e resistividade de 1,46.10-3 .cm, permitindo concluir que o filme produzido se comporta como um TCO (óxido transparente condutivo). A comparação desses resultados com trabalhos disponíveis na literatura, permite concluir que a fonte amplificadora de potência desenvolvida nesta dissertação possibilita a obtenção de filmes finos de AZO com condutividade e transparência superiores àqueles produzidos com fontes operando em radiofrequência, técnica atualmente disponível e amplamente utilizada no mercado.
The development of thin films deposition techniques allows to increase value and give new features to the materials. Currently, indium doped zinc oxide (ITO) is widely used in the market. However, due to the low availability of the indium in the nature and the high costs involved on its acquisition, alternative elements are being studied for its replacement. Aluminum doped zinc oxide (AZO) stands out as a promising substitute, mainly because of its characteristics, such as high transmissivity, low resistivity and band gap value of 3.37 eV. That allow the application of AZO in the synthesis of thin films semiconductors. In this work, it was developed a prototype of a plasma power source amplifier (FAP) to operate in alternating current (AC) and low frequency (15 - 40 kHz), responsible for initiating and sustaining the electric field used for plasma generation. This FAP was used to deposit AZO thin films by the technique of magnetron sputtering. The analysis of the morphological, optical and electrical characteristics of the AZO films produced in this study resulted in more than 80% transmittance, band gap energy value of 3,82eV, and resistivity of 1,46.10-3 .cm. The thin films synthetized was classified as transparent conductive oxide (TCO). The comparison of these results with the characteristics of similar films avaiable in the bibliography, allows to conclude that the power amplifier source developed in this dissertation makes it possible to obtain thin films of AZO with conductivity and transparency superior to those produced with RF magnetron sputtering, technique currently available and widely used in the market.

APA, Harvard, Vancouver, ISO, and other styles

14

JHONG, SHIH-YAO, and 鐘仕堯. "Preparation and Characterization of Aluminum-doped Zinc Oxide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47812009878767669695.

Full text

Abstract:

碩士
國立新竹教育大學
應用科學系碩士班
100
Aluminum-doped zinc oxide (AZO) powders were synthesized using a chemical precipitation method. We use both reactants of zinc nitrate and aluminum nitrate as well as urea or ammonia as the precipitant to get precursor. Then the precursor with a doping rate varying from 1 to 11 mol.% of Al were calcined at 400℃-800℃ for three hours. The effects of the various synthesizing parameters, including reaction temperature, the doping amount of aluminum, and the pH value during chemical precipitation reaction, and the calcination temperature of the precursor were investigated in details. The results of inductively coupled plasma atomic emission spectrometer (ICP-AES) measurement ensured the stoichiometric ratio of Al/Zn in our AZO powders. By the thermogravimetric analysis (TGA), AZO powders stability generated when temperature higher than 500℃. The X-ray diffraction patterns showed that AZO powders exhibit Wurtzite ZnO structure. Thus we can determine that Al3+ is indeed doped into the zinc oxide. The powders calcined higher than 600℃ appeared the ZnAl2O4 phase. The images of scanning electron microscopy (SEM) showed different morphology depend on chemical reaction temperature or the pH value during chemical reaction or precipitant. In the Fourier-Transform Infrared Spectrum (FTIR), we observed vibration absorptions of Zn-O at 400-600 cm-1. A absorption peak was observed at 677 cm-1 if samples contain ZnAl2O. The luminescence properties of AZO and ZnO are similar. Observed intrinsic emission of ZnO at 380 nm and deep level emission of ZnO at 570 nm and 660 nm.

APA, Harvard, Vancouver, ISO, and other styles

15

SYU, WEI-SYUAN, and 徐偉軒. "Indium Tin Oxide/ Aluminum Zinc Oxide Films Applied in Low Emissivity Glass." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/08105276921180646637.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
103
Bi-layered indium tin oxide/aluminum doped zinc oxide (abbreviated as ITO/AZO) films were produced by in-line sputtering. Two different concentrations of oxygen gas flow: 1.88 and 3.33% were applied during producing indium tin oxide films. The ITO/AZO films with 1.88 % oxygen concentration can have 9.8X10-4 ohm-cm in electric resistivity and 75% in average optical transmittance (in region of 400~700 nm) Vacuum and hydrogen plasma annealing was treated on ITO/AZO films. Both vacuum and hydrogen plasma annealing can improve electrical and optical properties of ITO/AZO films. Hydrogen plasma annealing can improve more on electrical and optical properties of ITO/AZO films than vacuum annealing does. Hydrogen plasma annealed ITO/AZO films with 1.88 % oxygen concentration can have 3.6X10-4 ohm-cm in electric resistivity and 89% in average optical transmittance (in region of 400~700 nm). The as-deposited, vacuum and hydrogen plasma annealed ITO/AZO films were measured in optical reflectance in infrared region for evaluating ITO/AZO films applied in low emissivity glass. The optical reflectance at 2500 nm for vacuum and hydrogen plasma annealed ITO/AZO films is around at 69 %; which is more than 3 times compared with that for as-deposited ITO/AZO films. This result indicates vacuum and hydrogen plasma annealed ITO/AZO films have high potential applied in low emissivity glass

APA, Harvard, Vancouver, ISO, and other styles

16

Wei, Fanjie. "Aluminum Doped Zinc Oxide Thin Film for Organic Photovoltaics." Thesis, 2010. http://hdl.handle.net/1807/24651.

Full text

Abstract:

Aluminum Doped Zinc Oxide (AZO) produced by radio frequency (RF) magnetron sputtering is thought to be the prospective replacement of the de facto standard indium tin oxide (ITO) anode in organic solar cells. In order to achieve a proper resistivity and transmittance of AZO thin film compared to ITO, a systematic study was done to optimize the sputtering conditions. In this work, two primary parameters: target-substrate distance and sputtering power, were optimized, and a optimized film thickness was determined. A poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) bulk-heterojunction organic solar cell was fabricated based on the optimized parameters and the power conversion efficiency reached 0.83%. A theoretical analysis is given to explain the optimization process. This work provides a clear pathway to substitute AZO for ITO in organic solar cells for future mass production.

APA, Harvard, Vancouver, ISO, and other styles

17

Yung, Weijung, and 勇威戎. "Preparation And Characterization Of Aluminum-Doped Zinc Oxide Films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/33653870349987702016.

Full text

Abstract:

碩士
東海大學
化學工程與材料工程學系
101
In this study, we reported on the micro-structural, transparent and heat shielding, and dielectric properties of aluminum-doped ZnO thin films prepared by sol-gel method. The doping amounts of Al, the number of coating layers, and the concentrations of ZnO have strong influence on the properties of the AZO thin films. 　　The undoped ZnO thin films were dried at a constant temperature of 250 ℃ for 10 minutes and then sintered at a constant temperature of 600 ℃ for 1 hours. As the concentration of undoped ZnO thin films increases, the surface average roughness (Ra) and the near infrared (NIR) shielding increase, but the visible transparency decreases. The 0.5 M undoped ZnO film exhibits the lowest Ra of 23.26 nm. The 0.9 M undoped ZnO film exhibits NIR shielding of 15%. 　　As the doping amounts of Al and the concentrations of ZnO films increase, the Ra and the NIR shielding increase, but the visible transparency decreases. The 0.5 M ZnO thin film doped with 0.5 molar % of Al exhibits the lowest Ra of 44.34 nm. While the doping amounts of Al and the concentrations of ZnO films increase, the AZO thin films exhibit the NIR shielding in the range of 10-20 %. The dielectric constants of AZO thin films were measured by Free-space method in the range of 1-4 GHz. At 1 GHz, as the doping amounts of Al and the number of coating layers increase, the dielectric constants increase. However, in the higher frequency range, the variation is not obvious. The dielectric properties of AZO thin films were also measured in the resonant cavity at 3.5 GHz. The 0.9 M ZnO thin film of 20 layers doped with 4 molar % of Al exhibits the lowest dielectric constant of 1.126 and the lowest dielectric loss of 0.00799. As the number of coating layers and the doping amounts of Al increase, both the dielectric constant and the dielectric loss increase. The 0.9 M ZnO thin film of 20+30+40 layers doped with 32 molar % Al exhibits the highest dielectric constant of 4.326 and the highest dielectric loss of 0.59131.

APA, Harvard, Vancouver, ISO, and other styles

18

Tsai, Ju-Hsuan, and 蔡儒璇. "Aluminum-doped zinc oxide nanostructures applied in piezoelectric nanogenerators." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/u4u9t2.

Full text

Abstract:

碩士
國立虎尾科技大學
光電與材料科技研究所
97
Using low temperature wet chemical growth of one-dimensional aluminum-doped zinc oxide nanostructure on indium-tin oxide (ITO) substrates and flexible plastic substrates. Discuss effects of growth temperatures, concentrations, and reaction time on the morphology and characteristics of the ZnO nanorods. Photoluminescence (PL) and UV/Vis spectrometer were also employed to understand the luminescent and transmittance characteristics of the nanorods. This was due to the combination of Zn+ ions and OH- ions which affected by doping concentration. The results showed that when the temperatures and reaction time increased, the diameters of the nanorods increased. The photoluminescence measurements showed that the ZnO nanorods had good ultraviolet emission and blue emission. Furthermore, we assembled the ZnO nanorods arrays with zigzag electrodes for nanogenerators which driver by ultrasonic vibration. The current performance and Schottky barrier of the nanogenerators were also discussed.

APA, Harvard, Vancouver, ISO, and other styles

19

Hsieh, Cheng-Kang, and 謝振剛. "Characteristics of transparent and conductive aluminum zinc oxide thin film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/20899995915943894960.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Hsieh, Hsiu-ming, and 謝修銘. "High-Humidity Study on Aluminum Doped Zinc Oxide Thin Films." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57792940194528423114.

Full text

Abstract:

碩士
國立中央大學
化學工程與材料工程研究所
98
This study focuses on the electrical and optical stability of AZO (ZnO: Al2O3= 98 wt.% : 2 wt.%) transparent conductive thin film in high humidity environment, and discusses their behavior in different annealing ambient (vacuum and oxygen). In this experiment, we use the RF-magnetron sputter system to deposit the thin films on the quartz substrate. After deposition, there are two different annealing ambient is applied, which are vacuum and oxygen. Finally, these samples were put in a high humidity environmental test system. Using Hall Measurement and 4-points probe stage to measure the change of the electrical properties, the UV/VIS Spectrophotometer used to monitor the transmittance. From the X-ray Photoelectron Spectroscopy result, we can observe the change of the binding energy or chemical state in AZO thin films about each element, like zinc and oxygen. 　　 According to AZO films annealed in different atmospheres (vacuum, oxygen), the trends of resistivity change show big differences among them. There are two effects (annealing ambient and surface adsorption of water molecules) causing an oxygen concentration gradient along the film thickness. When the oxygen vacancy is the dominate mechanism of the carrier formation, the moisture will cause a serious decay of electrical property due to the annihilation of free carriers. From the second part of results, the Cr-coated AZO structure can exhibit a great electrical property and stability. It shows a 90 % transmittance in visible region. It might be a suitable candidate to replace ITO in the application of those products used in harsh environmental conditions.

APA, Harvard, Vancouver, ISO, and other styles

21

Yang, Chia-hao, and 楊家豪. "Mechanical Properties of Aluminum-doped Zinc Oxide Transparent Conducting Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/51126990025967626671.

Full text

Abstract:

碩士
大同大學
機械工程學系(所)
97
Flexible displays will play an important role in future electronic products ranging from cell phones and PDAs to computers, toys, and electronic books due to their attractive properties including reductions in weight and thickness, improved ruggedness, and flexible form. To bear repeated tensions, bends, and folds, it is important to investigate the mechanical properties of components in flexible displays. This paper aims to measure the mechanical properties of aluminum-doped zinc oxide (AZO) transparent conductive thin film. The AZO films were deposited on the glass substrate by sol-gel method and further determine a better thermal treatment temperature in sol-gel process. In addition, AZOY films were also deposited on the glass and polyethylene terephthalate (PET) substrate at room temperature by RF magnetron sputter. Their optical, electrical, structural, and mechanical properties were measured to determine an optimal sputtering power. The results of the sol-gel method show that AZO films prepared at the thermal treatment temperature of 650℃ exhibited a smaller surface roughness and better crystallization; Moreover, its Young's modulus and hardness, 83 GPa and 4.1 GPa respectively, are much higher than the other two thermal treatment temperatures. The results of the RF magnetron sputtering method show that AZOY films have the lowest resistivity about 2.6×10-2 Ω-cm at 70W and all AZOY films show high transmittance over 80 % at 400 nm ~ 800 nm visible. In addition, the reduced modulus of AZOY films increased with increasing sputtering power. Moreover, the crystal quality and mechanical properties of the AZOY films deposited on glass substrates is much better than on PET substrate because of less surface roughness.

APA, Harvard, Vancouver, ISO, and other styles

22

Cheng-YuChi and 紀承佑. "Fabrication of Aluminum-Doped Zinc Oxide (AZO) Based Gas Sensors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/wzt5uy.

Full text

Abstract:

碩士
國立成功大學
微電子工程研究所
105
With the development of industry, people's daily life is full of more and more industrial products, which can release volatile organic compounds (VOCs) in indoor air. Most of the VOCs, which are exposed to people for some time, pose a threat to human health when the concentration reaches a certain degree. Therefore, people also gradually focused on gas sensors. Nowadays, gas sensors based on metal oxide semiconductor materials have attracted increasing interests, due to their simple implementation, low cost, high compatibility with semiconductor processing and good reliability for real-time applications. Furthermore, it is well known that high sensitivity, rapid response, and excellent selectivity are three most important properties for oxide semiconductor gas sensors. Aluminum-doped zinc oxide (AZO) based gas sensors have its merits, such as environmental friendliness, low cost, good compatibility, excellent selectivity, high sensitivity and so on. Consequently, Aluminum-doped zinc oxide (AZO) was employed as gas sensors in this study and analyzed its compositions, structures and atomic bonding by x-ray diffractometer (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and fourier transform infrared spectroscopy (FT-IR). First, the Cr/Pt interdigitated electrodes were fabricated on a sapphire substrate by thermal evaporation. Then, the AZO sensing layer was deposited by radio-frequency (RF) sputtering. Finally, the crystalline of AZO was improved by rapid thermal annealing (RTA) and gas sensing properties were discussed. However, the normal nickel oxide gas sensor had bad selectivity on the different gas concentration. So that, we utilized different catalytic metal which could induce selectivity to composite AZO film. Then, palladium and platinum catalytic metal film by thermal evaporation could effectively catalytic hydrogen and ammonia gas. The result, both hydrogen and ammonia gas had excessive sensing property. Finally, Au nanoparticles were deposited on the AZO sensing film structure. Au nanoparticles were excellent catalyst for formaldehyde and formed more active sites and structures with large surface area that facilitated gas transmission and reaction on the surface of the materials. Thus, the addition of Au nanoparticles actually enhances the sensitivity and improves formaldehyde sensing property.

APA, Harvard, Vancouver, ISO, and other styles

23

Chen, Jin-Zhou, and 陳錦洲. "Sputtering of Zinc Oxide: Aluminum (ZnO:Al) Transparent Conducting Oxide Films by DC+RF Power." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/59vj44.

Full text

Abstract:

碩士
國立中興大學
光電工程研究所
99
In this thesis, the aluminum doped ZnO transparent conducting films were prepared by introducing the direct current (DC) power and radio frequency (RF) power into the reactor simultaneously magnetic controlled sputtering method. We investigated the effects of different process parameters such as changing the RF sputtering power and substrate temperature. Then the AZO thin films were annealed in 6% H2/ Ar ambient or dipped into DI-water. The effects of post treatment of films on electrical characteristics, optical characteristics, structure and the composition were investigated. We fix the DC power at 80W, the film’s thickness increases with the increasing RF power before 80W, but decreases after 80W. This could be due to higher incident power make the film denser. The carrier concentration, oxygen vacancy, mobility, and band-gap decrease after the substrate was dipped into the water. After annealing, the carrier concentration, mobility and oxygen vacancy increases, that decreases the resistivity. Band-gap of the film increases with the substrate temperature. Especially, the carrier concentrations for those films deposited at lower substrate temperature are increasing clearly. This lowers the resistivity greatly. The structure for those films deposited at 300 and 325 oC substrate temperature is stable, and was not destroy by the DI water. Therefore, the oxygen vacancy decreases with the substrate temperature after annealing. The transmittance for different process parameters of the deposited film in the visible range are great than 80%. After H2/Ar annealing to improve the phenomenon of electrical behavior, films dip in the DI -water the peak of (002) and (004) orientation the relationship between the structure due to the destruction of water, except RF power 30W, substrate temperature of 300 and 325 degrees to maintain compared to the complete structure.

APA, Harvard, Vancouver, ISO, and other styles

24

Tseng, Yin-Chin, and 曾應欽. "Aluminum doped zinc oxide films prepared by in-line sputter tool." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/fz35wj.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
96
This work studies aluminum doped zinc oxide (AZO) films prepared by in line sputtering. In line sputtering is a popular thin film producing method for large area and high throughput production in industry application. Different substrate heating temperatures and process gas during sputtering were applied to produce AZO films on glass with in line sputtering AZO target. Average optical transmittance 91% between 400 and 1100 nm wavelength region and electrical resistivity 6.22×10-4Ω-cm of AZO films can be obtained with pure argon process gas and 450C substrate heating temperature. Average optical transmittance 92% between 400 and 1100 nm wavelength region and electrical resistivity 4.81×10-4Ω-cm of AZO films can be also produced from argon mixed with 5% hydrogen process gas and 450C substrate heating temperature. Adding hydrogen during sputtering can increase film’s electrical conductivity. The carrier concentration for AZO films prepared from argon mixed with 5% hydrogen process gas is higher than that prepared from pure argon gas about 2.2 times when the electrical property was measured within one day after films production. The electrical property for AZO films produced from hydrogen mixture gas is unstable. The carrier concentration decreases more than one time for films produced from argon/hydrogen mixture after storing 30 days. The films produced from pure argon gas do not have this decreasing behavior. This work contributes to industry like thin film solar cell in selecting process recipe for producing AZO films as transparent electrodes.

APA, Harvard, Vancouver, ISO, and other styles

25

Chiu, Yi-Te, and 邱依德. "The Phase Transitions of Aluminum Doped Zinc Oxide Under High Pressure." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/48431805714500620864.

Full text

Abstract:

碩士
國立新竹教育大學
數理教育研究所
100
This experiment is to study phase transition of Zn0.97Al0.03O（3% Aluminum doped ZnO, Zn0.97Al0.03O）under the room temperature and high pressure. The Zn0.97Al0.03O is prepared by chemical precipitation method then analyzed through high pressure experiment by angle-dispersive x-ray diffraction(ADXRD) in LAB-BL01C1 of National Synchrotron Radiation Research Center (NSRRC). Zn0.97Al0.03O was pressurized from ambient to 19.20 GPa in this experiment. The phase transition from the würtzite-type (B4) to the rocksalt-type (B1) phase started at 9.02 GPa and completed at 16.54 GPa. The initial transition pressure of Zn0.97Al0.03O is earlier than the formal conclusion 9.3~13.7 GPa. It indicates that Al doped influence the stability of Zn0.97Al0.03O structure. From the result of the research, c axis is compressed more easily than a axis. Before the phase transition, c/a ratio decreases gradually but the bond length between Zn and O parallel to the c axis changes slightly. As soon as the phase transition starts, the c/a ratio and the bond length between Zn and O increase till the completion of the phase transition. The Zn0.97Al0.03O phase transition model through hexagonal path meets the result of formal research.

APA, Harvard, Vancouver, ISO, and other styles

26

Hung, Chia-Liang, and 洪嘉良. "Research of Textured and Fabrication of Aluminum-doped Zinc Oxide Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/12399098978008515536.

Full text

Abstract:

碩士
國立高雄應用科技大學
機械與精密工程研究所
97
In this study, aluminum-doped zinc oxide (AZO) thin films are deposited on substrates such as: glass, SiO2 and ITO glass, through the change of etching parameter, the thin film surface is formed with nano-column structure. First, magnetron sputtering is used for determining the parameter of sputtering of AZO thin films, that is, power supplies of DC and RF (radio frequency) are used respectively, and Ar is used as the process gas to investigate the change of sputtering parameters (sputtering power and gas flow rate) so as to acquire good resistivity and transmission. Later on, acidic and basic solutions are used respectively to etch AZO thin films. The solution concentration and etching time is changed so as to obtain nano scale columnar structure. From the result, it was found that under the same etching time and as the increase in the concentration of the etching solution, the reaction of AZO will be accelerated and the formation of nano columnar structure will become more difficult. From XRD analysis, it was found that IV under low concentration etching of AZO thin films, the etching time has positive relationship with the gap among nano columns. Since the resistivity after etching is raised by several orders of magnitude, in order to have at the same time low resistivity and high transmission, this study associates the etched nano columnar structure and ITO transparent conductive glass, it is hoped that through the change of the structure, highest transmission and lower reflectance is obtained. From the experimental result, it can be seen that when RF power of 500 W and Ar flow rate of 60 sccm are used to sputter AZO thin film, we can make the resistivity of the thin films reach 1.1×10-3 Ω·cm; when RF power of 400 W and argon flow rate of 60 sccm are used to deposit AZO thin films of thickness of 2000 Å, the transmission is 94.44 %. When 2.5 % KOH is used to etch AZO thin film for 120 seconds, the transmission can be raised to 95.2 % but the resistivity is increased by 44 times. When AZO is deposited on 2500 Å ITO glass substrate and etching is performed, AZO/ITO/Glass structure can lead to transmission of 87.94 %; structure of Textured of AZO/ITO/Glass/Textured of AZO can lead to transmission of 84.46 %; moreover, structure of Textured of AZO/ITO/Glass can lead to lowest reflectance of 9.57 %. And the resistivities of the transparent and conductive thin films of these structures are similar to that of ITO, that is, about 6 Ω/□.

APA, Harvard, Vancouver, ISO, and other styles

27

Li, Heng-Hsu, and 李恒旭. "Characterization of Textured Aluminum Doped Zinc Oxide Films by Wet Etching." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/05431031761136699475.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
97
This project provides an overview of surface texturing of aluminum doped zinc oxide (AZO) films by wet etching. For thin films solar cell application, the light passed through solar cells reduced reflectance to permeate into absorb layer of solar cells improve the conversion efficiencies when using solar cells as transparent electrode. In this work, acidic (HCI) and alkaline solutions (KOH) were used as etching solutions from the etching behavior. Four sample AZO films (A50、A150、AH50、AH150) were produced from four different recipe with in-line sputtering. Four sample films were separately etched with different etching solution concentration and time. The optical transmittance of the etched samples were measured by a spectrophotometer, scanning electron microscopy (SEM) and four-point probe. Optical properties of films etched by KOH solution are better than those etched by HCl. The film A50 was etched for 30 sec by 33wt% KOH solution. The average transmittance 81.98% was increased to 83.15% while the average reflectance 16.59% was reduced to 9.05%. Compared with the original reflectance, 45% decrece is accomplished. In addition, the films of A150 and AH50 were etched for 100 sec by a 5wt% KOH solution. The existing defects on the surface of thin films were getting improved. Average transmittances of 87.23% and 87.32% were increased to 90.7% and 90.06%, respectively and average reflectance 12.43% and 12.78% was reduced to 7.79% and 10.78%. The film of AH150 was etched for 30 sec by a 33wt% KOH solution. Average transmittance 90.39% was increased to 96.38%. Compared with the original reflectance, 6% increase is accomplished. AH150 film is the most improved transmittance of all films and the average reflectance 12.98% was reduced to 9.58%. As above mentioned, it could be improved the optics characterization of films efficiently by textured aluminium doped zinc oxide films by wet etching. Using solar cells as transparent electrode enables the light passed through solar cells and reduceds reflectance to permeate into absorb layer of solar cells and improve conversion efficiencies of solar cells.

APA, Harvard, Vancouver, ISO, and other styles

28

Wang, Sheng-Wen, and 王聖文. "Investigation on High Performance Aluminum Zinc Tin Oxide Thin Film Transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/41158584493600978899.

Full text

Abstract:

碩士
明新科技大學
電子工程研究所
100
We investigated on the physical characteristics, electrical performance and environmental impact, temperature effects of amorphous Al-Zn-Sn-O thin film transistor (AZTO TFT) without any channel passivation layer. In this paper, we have successfully developed a non-scattered and rare elements amorphous oxide semiconductor materials for next generation display technology of new materials, using the staggered structure made into a thin film transistor device, by changing the deposition film process parameters and target composition ratios, and the different electrical characteristics of the measurement techniques to clarify the impact of components on different environments, temperature, light and other conditions. The mobility enhanced from 1.52 to 7.47 cm2/Vs while the concentration of Sn increased from 10.97 at.% to 20.35 at.% and oxygen gas flow rate changed from 0 to 2 sccm at deposition process. The improved device stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion in the AZTO film with the increase of O2 gas flow rate. In addition, the optical band gap of AZTO is higher than 3.6 eV, which performed immunity against visible light and only absorbed light with wavelength lower than 360 nm. These results showed the application potentials of AZTO TFT device on flat panel display technology. In this paper, also using a variety of materials, analytical techniques and instruments, such as X-ray diffraction (XRD), Scanning electron microscope(SEM), atomic force microscope (AFM), X-Ray photoelectron spectroscopy(XPS) and other zinc and tin to alumina for the crystallization of semiconductor, film thickness, grain size and surface morphology, zinc tin alumina thin film process power crystal components, conducting electrical characteristics of the transistor element analysis and discussion.

APA, Harvard, Vancouver, ISO, and other styles

29

Lu, Jun-Jie, and 呂鈞傑. "Slip Casting and Sintering Behavior of Aluminum-doped Zinc Oxide Ceramic." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/376b54.

Full text

Abstract:

碩士
國立臺北科技大學
材料科學與工程研究所
106
Transparent conducting oxide (TCO) film is a filme material with superior resistivity (< 10-3 Ω•cm) and high trasmittance (> 80 %) for the visible light (380~780 nm). Sputtering is a general method to prepare TCO films. However, rare studies investigated the effects of process and characteristics of sputtering target. This study applied low-cost slip casting to manufacture aluminum-doped zinc oxide (AZO) ceramic. Slurrues (ZnO：Al2O3 = 98：2 wt%) with various solid contens was ball milled and then slip cast. The influecens of sintering temperature on the densification, microstructure, resistivity, and mechanical properties of AZO ceramic were studied. The results indicate that increasing the solid content of slurry can effectively increase forming rate and green density. When the solid content is 40 vol.%, the shortest forming time of 71 minites and the optimal green relative density of 60.6 % are obtained. Compared with the 20 vol.% solid content, the forming time is reduced by 80%, and the green density is raised by 2%. Moreover, the reuslts about sintering show that both the sintered density and grain size are increased with increasing the sintering temperature. When the sintering temperature is inceased from 1200°C to 1500°C, the sintered density and grain size is raised from 80.2 % to 99.8 % and from 2.1 μm to 4.7 μm, respectively. ZnAl2O4 spinel generated during sintering helps the densification and resists grain growth. With the improved densification, the harndess and bending strength are increased, and the resistivity is reduced. When the solid content of 40 vol.% and sintering temperature of 1500°C are applied, the optimal relative density (99.8 %), resistivity (9.2x10-4 Ω•cm), hardness (221 HV), and bending strength (258 MPa) are obtained in this study.

APA, Harvard, Vancouver, ISO, and other styles

30

Cheng, Hao-Wen, and 鄭皓文. "Aluminum Doped Zinc Oxide Transparent Conductive Oxide Thin Film Deposited by Arc Ion Plating System." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/kmzc4r.

Full text

Abstract:

碩士
國立交通大學
平面顯示技術碩士學位學程
105
The project aims to analysis the properties of Transparent Conducting Oxide thin film of Al doped ZnO (AZO) deposited on glass、silicon wafer and PET substrates though controlling various parameters including alloy target with 2% and 3% Al-Zn and oxygen flow from 10-150 sccm in a 100℃ chamber of Arc ion plating system.The film properties analysis include optical character, electrical and structure properties by UV-Visible, Hall measurement, X-ray powder diffraction (XRD), Scanning Electron Microscope (SEM), Alpha-step, and Four Point Probe systems. Furthermore, the optical characters and electrical properties will be studied on PET substrate by different radius of curvature of flexural loads. From the testing results, the average transmittance under visible range (about 400-700nm) of all the AZO films are higher than 80%. The best result of average transmittance could reached 89%. The best resistivity was 3.769×10-4 Ω-cm. The homogeneity of electrical resistance on 10×10 cm2 PET substrate was 9.5%.The films deposited under 100℃ chamber will carry the properties of (002) C-axis orientation by XRD analysis.

APA, Harvard, Vancouver, ISO, and other styles

31

Tang, Kuang-Yu, and 湯光煜. "Preparation and Analysis of Zinc Oxide and Lead Sulfide Nanowires by Anodic Aluminum Oxide Film." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/23rq8p.

Full text

Abstract:

碩士
國立勤益科技大學
機械工程系
105
In this study, the Anodic Aluminium Oxide(AAO) template, having ordered the array nanoporous structure was fabricated by two-step anodization. Then make Zn-nanowires and Pb-nanowires by vacuum, high temperature, injection technique. Fabricate ZnO-nanowires and PbS-nanowires with after-treatment .And analyze the result about manufactures of ZnO-nanowires and PbS-nanowires. The experiment is about use high-purity aluminum to make array nanoporous structure template by two-step anodization .Make some templates with many different holes size by adjust the parameter of solution, voltage and anodizing time ,and in order holes structure size to balance. Then, the Zn and Pb was melted in the vacuum furnace and injected into an template and use heat treatment as well as other after-treatments to fabricate ZnO-nanowires and PbS-nanowires. With scanning electron microscopy(SEM),we can find the structure of AAO template and the padding of metal nanowires. Then analyze the proportion of chemical composition and the branch of elements by energy dispersive X-ray spectrum (EDS).At last we can analyze the proportion of elements and the structure of crystals by x-ray diffraction(XRD). Final results of the experiment, both of Zn and Pb injected into an template. Analyze the proportion of chemical composition about Zn-nanowires, by vulcanization and oxidation. We can find the structure of nanowires including ZnO. The part of Pb-nanowires, we turn it to PbS-nanowires successfully by vulcanize treatment with many parameters. And then, we can find the variation of Pb turn into PbS in template at different of temperature.

APA, Harvard, Vancouver, ISO, and other styles

32

TSUNG-HAN, LI, and 李宗翰. "Titanium Oxide/ Aluminum Zinc Oxide Films Prepared by Thermal Oxidation Applied in Low Emissivity Glass." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/24yevf.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
106
This work tries to develop glass with low emissivity and self-cleaning characteristics. The aluminum doped zinc oxide (AZO) films were deposited on glass. The titanium (Ti) films were following coated on AZO deposited glass as Ti/AZO glass. The Ti/AZO glass was thermally oxidized with 300°C, 400°C and 500°C respectively. The oxidized Ti/AZO glass was post annealed in vacuum and hydrogen plasma separately. Microstructure, electric property, optic property, emissivity and water drop contact angle of the processed glass samples were measured. The results indicate 500°C thermally oxidized Ti/AZO glass with hydrogen plasma annealing demonstrates relatively good both low emissivity and well hydrophilic (self-cleaning) properties among all test conditions.

APA, Harvard, Vancouver, ISO, and other styles

33

Yang, Jan-Liang, and 楊展亮. "The Effect of One-Dimensional Zinc Oxide Structure and Growth by Aluminum." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/40326267436506103491.

Full text

Abstract:

碩士
逢甲大學
電子工程所
97
In this study, the ZnO nanowires were deposited on ITO/glass substrate using chemical vapor deposition system. The microstructure of ZnO nanowires is discussed with various deposition conditions, such as concentration ratio of Al/Zn and deposition temperature. The ITO/glass substrate was cleared using acetone and DI water. The temperature of reactive source is 550, 675, 864, and 896 ℃. The chamber pressure was 4 and 8 Torr. The gas flows of Ar and O2 with deposition times for 2 hours were 65 and 100 sccm, respectively. The structures of nanowires were observed by field emission scanning electron microscopy (FE-SEM). Chemical composition of the as-prepared ZnO2 nanowire arrays were analyzed by energy dispersive spectrometer (EDS). The crystal properties of the nanowires were evaluated by X-ray diffraction (XRD).

APA, Harvard, Vancouver, ISO, and other styles

34

Shih, Jie-Wen, and 石介文. "Study of aluminum-doped zinc oxide thin films by atomic layer deposition." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/70709030423693686863.

Full text

Abstract:

碩士
聖約翰科技大學
自動化及機電整合研究所
102
This work characterizes the mechanical and opto-electrical properties of aluminum doped Zinc Oxide (AZO) thin films on flexible PET substrates deposited by atomic layer deposition (ALD). The Aluminum composition of the AZO films was 2% by controlling the ratio of Zn:Al pulses as 49:1. The deposition process is heated by radiation method to protect the polymer substrates. Three types of plasma surface treatment, three deposition temperatures, and four film thicknesses are considered in prepared the specimens. Photoluminescence spectrometer, micro scratcher, Hall effects meter, X-ray diffraction machine, and nanoindentor are used to characterize the properties of the AZO thin films. The results show that the adhesion are improve by the surface plasma treatment of the PET substrates. The electric properties increase as the deposition temperature elevates. For various thicknesses, 100 nm thickness has the best electric property and the adhesion increases as the film thickness increases.

APA, Harvard, Vancouver, ISO, and other styles

35

Shen, Yi-Lin, and 沈藝林. "Aluminum Zinc Oxide Based Multilayer films Applied in the Low-emissivity Glass." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/38517138819125870232.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
105
Aluminum doped zinc oxide (AZO) films were sputtered on glass. Then, Aluminum (Al) and titanium (Ti) films with different combinations are evaporated on AZO based glass: AZO/glass、Al/AZO/glass、Ti/AZO/glass、Ti/Al/AZO/glass. Part of the coated samples were post annealed in vacuum and hydrogen plasma. Low emissivity related properties: microstructure, electrical and optical properties were measured. The optimum condition of materials and process condition for obtaining the low emissivity were analyzed and observed. Surface grains of post annealed samples demonstrate denser structure than those of as-deposited samples. The electrical resistivity, average transmission in visible range and reflection in near infrared region of Ti/Al/AZO are 2.03×10-3Ωcm, 55.38% and 8.48%, compared with those post annealed in hydrogen plasma 70.55% and 14.13%. Post annealed process can raise the average transmission in visible range and reflection in near infrared region of Ti/Al/AZO. This result could be applied in low emissivity coating.

APA, Harvard, Vancouver, ISO, and other styles

36

Hsiao, Yen-Chih, and 蕭彥志. "Preparation and Nanomechanical Properties of Aluminum Zinc Oxide Transparent Conducting Thin Films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/50094713653063757957.

Full text

Abstract:

碩士
中興大學
材料工程學系所
95
Aluminum zinc oxide transparent conducting thin films possess excellent optical and electrical properties. They can be widely applied to the optoelectronic industry. Thus in this study, the aluminum zinc oxide films were prepared on glass substrates by magnetron sputtering and Sol-gel methods. The microstructures and optical and electrical properties of the films deposited under various deposition parameters were investigated. Besides, their nanomechanical properties and interface adhesion energy were measured by nanoindentation and nanoscratch tests. The aluminum zinc oxide films deposited by sputtering were continuous, dense, and uniform with a columnar structure. Under a low sputtering power and substrate temperature, the obtained films exhibited a roughly spherical particle shape and poor crystallinity. With increasing sputtering power and substrate temperature, the particles became a facet shape with an obvious crystalline structure. The grain size increased with sputtering power and substrate temperature, and consequently the electrical resistivity decreased. The transparency of the aluminum zinc oxide films achieved about 90 %, and the energy band gap was about 3.33 eV. Moreover, the elastic moduli and hardness of the films were about 110 and 8 GPa, respectively. With increasing sputtering power to 200 W, the hardness of the film increased to about 10 GPa. With increasing sputtering power and substrate temperature, the interface adhesion energy measured by the nanoscratch test was improved from 0.49 to 0.86 J/m2. and 0.79 J/m2 , respectively. Moreover, the aluminum zinc oxide films prepared by a Sol-gel method had a smooth surface and over 90 % transparency. The 2 at %aluminum-doped Zinc oxide films had the lowest electrical resistivity of about 5.6 Ω.cm. The elastic modulus and hardness of the aluminum zinc oxide films were measured as 60 and 1.1 GPa , respectively, by the nanoindentation test .

APA, Harvard, Vancouver, ISO, and other styles

37

Wei, Chung-Li, and 魏仲立. "The Application of Zinc Aluminum Oxide Thin Film to LCDs’ Color Filter." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/41922993356844916897.

Full text

Abstract:

碩士
中原大學
電子工程研究所
96
Abstract According to optical industry development. New material will be invented. The transparence of conductive thin film is used in LCD industry lately. It is of one kind material of high transmitting ultraviolet、and visible light that however can reflect the infrared rays. Traditional thin film uses ITO (indium Tin oxide) because of its high transparency and low resistively. Now it is widely applied in electronic and optical industry. Wing to the ITO target cost is very expensive hence a new material ZAO is desired Under some conditions, ZAO can be fabricated with the same property approaching ITO thin film. It has in future advantage over competition in optoelectronic application. Aluminum-doped zinc oxide films grown on CF(Color filter) have been prepared by DC reactive magnetron sputtering from metallic targets with different oxygen partial pressures at room temperature. A series of optical, electrical, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by using spectroscopy, X-ray diffraction, SEM, AFM and I/V conductivity measurements. The X-ray diffraction studies revealed that both as-deposited and annealed ZAO films have preferred orientation to wurtzite structure. Films with 2% Al dopant concentration after annealing at 220°c can obtain a minimum resistivity of 4.39×10-2Ωcm. All deposited ZAO films can reach as high transparency as 85~95%. Besides, both oxygen partial pressures dominate the grain size, surface morphology and crystallinity have also been examined.. It was found that the transmission coefficient of ZAO is better than that of ITO and decreases with increasing thickness of film and shifts to short wavelength with lowering oxygen partial pressure. In high vacuum ambient, IAO thin film however revealed a lower resisitivity and as high transmission coefficient as 2~3 times of traditional ITO. It’s surface resistance Rs if dominantly influent on annealing parameters.

APA, Harvard, Vancouver, ISO, and other styles

38

Chien, Roger, and 簡哲然. "Preparation of Powders of Transparent Conducting Aluminum-doped Zinc Oxide by Spray Pyrolysis." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/18748090569885304035.

Full text

Abstract:

碩士
長庚大學
化工與材料工程研究所
95
The objective of this research was to prepare crystalline powders of aluminum-doped zinc oxide by spray pyrolysis of the slurry obtained from the co-precipitates of zinc and aluminum nitrates. In addition, the effects of processing conditions of spray pyrolysis on the characteristics of the AZO powders were also investigated. From the experimental results, crystalline AZO powders could be produced by continuous style spray pyrolysis of the precursor precipitates obtained from the co-precipitation of the mixture solutions of zinc and aluminum nitrates at pH=8. It was also found that as the drying temperature and pyrolysis temperature increase, the crystalliniety of the AZO powders increased while the particle size of the AZO powders decreased

APA, Harvard, Vancouver, ISO, and other styles

39

Wu, Sheng-Hua, and 吳昇樺. "Thermal Stability of Aluminum Doped Zinc Oxide Thin FilmsAnalyzed by Thermal Desorption Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/km2ba7.

Full text

Abstract:

碩士
崑山科技大學
電機工程研究所
97
For evaluating thermal stability of aluminum doped zinc oxide(AZO)thin films, a series of AZO films with different processing recipe were measured with thermal desorption tool. Relative low thermal desorption and stable electrical, optical and materials properties of AZO films process recipe will be found after analyzing these measured results. The sample holder of thermal desorption tool was linearly heated from room temperature to 500℃ with constant heating rate 10℃per minute. All desorption species show similar desorption peak temperature position around 100℃and 200℃ nearby corresponding to relative maximum desorption rate. The desorption intensity shows increase with temperature up to 200℃. The aluminum species shows maximum thermal desorption amount among all desorption species of AZO thin films, One report describes thermal stability of extrinsic semiconductor is higher than that of intrinsic semiconductor our result is different with that scenario. There are several desorbed species observed from thermal desorption spectroscopy (TDS) by the species to know that The lowest intensity corresponds to best thermal stability condition is the substrate temperature kept at 200℃ under as best thermal stability condition. Because this experiment process is under high vacuum environment, the heating rate for 10℃/Min slow heating rate: For checking the (TDS) measured result accuracy, some of AZO thin films before and after TDS were with energy dispersive spectroscopy (EDS) measurement. The EDS results indicate for AZO films prepared under the same recipe, the aluminum content decrease most among all species for AZO thin films after TDS measurement. This data supports TDS measurement results. The chemical analysis is measured by X-ray photoelectron spectroscopy (XPS). It was found that after thermal desorption, the oxygen vacancy proportion increases, the adsorbed the oxygen in AZO films has the reduction, causes the conductivity promotion, and by electrical, optical and structure analysis after thermal desorption obviously improves. And that after TDS measurement the average optical transmittance reaches 92.38% of AZO thin films, meets condition of the thin film solar cell industry. The AZO thin film with the following hydrogen heat treatment checked by the TDS, The oxygen thermal desorption quantity has reduces. And obtains the electrical resistivity after the hydrogen annealing 300℃ condition 8.32×10-4 (ohm-cm), reduced about 28% compared to before TDS measurement, The electrical resistivity of the AZO films samples that after one month storage does not change for the substrate temperature non-heated. This result contributes thermal stability guide for thin films solar cells industry in producing transparent electrodes.

APA, Harvard, Vancouver, ISO, and other styles

40

Lin, Lu-yung, and 林呂勇. "Effect of annealing on the electrical properties of aluminum-zinc oxide thin films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/76489015950593196004.

Full text

Abstract:

碩士
逢甲大學
化學工程學所
97
In this study, zinc acetate dihydrate was used as a starting material, absolute ethanol and aluminum nitrate were served as the solvent and dopant sources respectively. Then, thin films were laid by spin coating on a substrate. After that, we used tube furnaces combined with a reducing atmosphere to grow crystal and create oxygen vacancy intentionally by varying manufacturing parameters. By way of chemical reactions and heat treatment, ZnO thin films with high conductivity and transmittance are obtained. The experiment results show that the manufacturing process with multilayer method has enhanced the growth of crystalline on (002) plane, the ideal ratio of Al dopant was Al/Zn=1.5 at%, and better quality of crystalline was obtained under reducing atmosphere (3% H2+97% Ar) and heat treatment of 550 ºC. This indicates that the manufacturing process with sol-gel method has obviously improved the optical and electrical properties of the AZO thin films. For transparent conductive thin films of the best quality, the sheet resistance reached 750 Ω/□, the resistance reached 9.8×10-2 Ω．cm, and the transmittance in visible light area was over 80%. Dopant different ions of zinc oxide films in the meanwhile, we discovered that heat trement under air or reducing atmosphere, when dopant flurine that can improvement the sheet resistance of zinc oxide films, when FAZO in 3% H2 and heat trement of 550 ºC, the sheet resistannce reached 48000 Ω/□, the resistance reached 6.78 Ω．cm.

APA, Harvard, Vancouver, ISO, and other styles

41

Lin, Jia-Yu, and 林佳裕. "Characteristics of Plasmonic Mirror-Image Nanoepsilon and Metallic Aluminum-Doped Zinc Oxide Material." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/37254754346822380537.

Full text

Abstract:

博士
國立交通大學
光電工程研究所
105
In this study, we propose a novel mirror-image nanoepsilon (MINE) structure resembled the combination of two face-to-face nanoscale ϵ-shaped structures to achieve highly localized and enhanced near field at its gap and systematically investigate its plasmonic behaviors. The MINE can be regarded as the combination of two fundamental plasmonic nanostructures: a nanorod-dimer and nanoring. By adapting a nanoring surrounding a nanorod-dimer structure, the nanorod is regarded as a bridge pulling the charges from the nanoring to nanorod, which induces stronger plasmon coupling in the gap to boost local near-field enhancement. This MINE with mode coupling between the nanorod-dimer and nanoring leads to the inducement of hybridized plasmon modes. Among these plasmon modes, the symmetric mode in the MINE structure is preferred because its charge distribution leads to stronger near-field enhancement with a concentrated distribution around the gap. In addition, we investigate the influence of geometry on the optical properties of MINE structures by performing experiments and simulations. These results indicate that the MINE possesses highly tunable optical properties and significant near-field enhancement at the gap and rod tips. Besides, MINE dimers arrays with varying dimer gap are also explored. As a result, a coupled symmetric (CS) mode can be excited in small dimer gap under longitudinal polarization, which provides the practicality of a high density hot spot and uniform pattern in MINE dimers array. The results improve the understanding of such complex systems and are expected to guide and facilitate the design of optimum MINE structures for various plasmonic applications. Finally, the application of the particle trapping is numerically and experimentally performed using the unprecedented MINE structure. It is shown that the proposed MINE structure can achieve stable trapping on tiny particles for future bio-chemical applications. In addition to the novel MINE structure, we also focus on another topic about a novel plasmonic transparent conducting oxide (TCO) material in this dissertation. It is well known as conventional metals suffering from large losses in optical frequencies because of the electron transition and electron scattering losses, which limits the feasibility of plasmonic applications, such as transformation optics (TO) devices and epsilon-near-zero (ENZ) devices. Thus, searching low-loss alternative materials for plasmonic applications is an important topic. In the study, we systematically investigate the plasmonic behaviors of aluminum-doped zinc oxide (AZO) thin films and patterned AZO nanostructures with various structural dimensions under different annealing treatments. We find that AZO film can possess highly-tunable, metal-like, and low-loss plasmonic property and the localized surface plasmon resonance (LSPR) characteristic of AZO nanostructure is observed in the near-infrared (NIR) region under proper annealing conditions. Finally, environmental index sensing is performed to demonstrate the capability of AZO nanostructure for optical sensing application. High index sensitivity of 873 nm per refractive index unit (RIU) variation is obtained in experiment. Taking with the advantages of excellent sensing ability on gas or biochemistry using AZO material, we believe that highly sensitive and responsive optical nano-sensor can be expected in the future.

APA, Harvard, Vancouver, ISO, and other styles

42

Chen, Xin-Zhang, and 陳信樟. "The Field-Emission Characteristics of Aluminum-Doped and Silver Doped Zinc Oxide Nanorods." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/93404939218906313100.

Full text

Abstract:

碩士
大葉大學
電機工程學系
101
In this study, aluminum-doped zinc oxide (ZnO) and silver-doped zinc oxide nanorods were grown by a hydrothermal method and the effect of varying the doping concentration on the field emission characteristics of the synthesized ZnO nanorods were studied. The growth procedure of ZnO nanorods is first spin-coating a seeding layer on silicon substrates, followed by the growth in the mixed solution of zinc nitrate hexahydrate (Zn(NO3)2•6H2O), hexamethylenetetramine (C6H12N4), and aluminum nitrate (Al(NO3)3•9H2O) or silver nitrate (AgNO3) at 90oC for 2 hours. The ratio of volume concentration of zinc nitrate hexahydrate to hexamethylenetetramine is 1:1. The purpose of aluminum nitrate and silver nitrate was to supply dopant atoms and the volume concentration was varied from 0.2% to 4% (i.e. 0.0000M to 0.0008M). Field-emission scanning electron microscopy (FE-SEM), field-emission tunneling electron spectroscopy (FE-TEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) were used to investigate the surface morphology, chemical compositions, and microstructure of aluminum-doped ZnO and silver-doped ZnO nanorods, the electrical properties were determined by Hall effect measurement, and the field emission characteristics of ZnO nanorods were measured in high vacuum. As found by EDS results, dopant atoms such as aluminum (Al) or silver (Ag) have been successfully incorporated into the crystalline structure of ZnO nanorods, and the conductivity, the concentration and mobility of majority carrier of ZnO nanorods have been modified accordingly. As can be seen in SEM results, the surface morphology of ZnO nanorods can be affected by impurity doping. It is found from XRD and FE-TEM results that the ZnO nanorods are of hexagonal wurtzite structure with [0001] as the most preferential direction of growth. It is also found that the Al-doped ZnO nanorods grown with 2% aluminum nitrate have the largest field emission current 127.78 (μA/cm2); while silver doped ZnO nanorods of field emission maximum is 77.5 (μA/cm2). In this study, it is demonstrated that the field emission characteristics of the ZnO nanorods can be effectively enhanced by doping impurities.

APA, Harvard, Vancouver, ISO, and other styles

43

LU, Guan-Hua, and 陸冠華. "Study of Relative Humidity Sensing Device Using Zinc Oxide Compound with Aluminum Doping." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/679y23.

Full text

Abstract:

碩士
國立高雄海洋科技大學
微電子工程研究所
102
In this thesis, the two terminal sensing devices and three terminal sensing devices were successfully fabricated by using the DC sputtering method and photo lithography method. The sensing devices are to detect the relative humidity value in the moisture environment using the zinc oxide sensing film with suitable aluminum doping. The measurements of resistance value, capacitance value, inductance value and current to voltage characteristic at different relative humidity environment were also completed for the sensing property of zinc oxide sensing device. The resistance value of zinc oxide sensing device are respectively 18 KΩ at 30% RH and 4 KΩ at 90% RH. The variation of resistance value reaches as up to the 14 KΩ from 30% RH to 90% RH. The adsorption time and desorption time of resistance measurement are 40 seconds and 60 seconds respectively. The capacitance value of zinc oxide sensing device are respectively 5.2 nF at 30% RH and 5.7 nF at 90% RH. The variation of capacitance value reaches as up to the 0.5 nF from 30% RH to 90% RH. The adsorption time and desorption time of capacitance measurement are 35 seconds and 35 seconds respectively. The inductance value of zinc oxide sensing device are respectively 2.8 H at 30% RH and 0.1 H at 90% RH. The variation of inductance value reaches as up to the 2.7 H from 30% RH to 90% RH. The adsorption time and desorption time of inductance measurement are 40 seconds and 20 seconds respectively.

APA, Harvard, Vancouver, ISO, and other styles

44

Liu, Yi Wen, and 劉亦文. "The Study of Aluminum-doped Zinc Oxide Membrane Applied to Bio-Sensing Devices." Thesis, 2019. http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107CGU05428014%22.&searchmode=basic.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Chen, Chien-Wei, and 陳建維. "The Study of Aluminum-Doped Zinc Oxide Thin Films Applied to GaN Ultraviolet Photodetectors." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/31657058034137320928.

Full text

Abstract:

碩士
正修科技大學
電子工程研究所
95
In this thesis, the investigation of the GaN ultraviolet photodetectors fabricated with the aluminum-doped zinc oxide (AZO) semiconductor material was proposed. First, AZO thin films are deposited by RF magnetron sputtering. At the same time, there were some influences on the GaN ultraviolet photodetectors when the parameters were varied with sputtering power, pressure and thickness. A glance at the experiment results shows that the optimum conditions of RF power, deposition time and process pressure were kept in 75w, 10 minutes and 1×10-2 Torr, respectively. From the experiment results, the electrical and optical characteristics for the devices have been improved with reduction of the leakage current. After that, the u-GaN and AlGaN/GaN superlattices (SLS) MSM photodetectors were fabricated with the semi-transparent Ni/Au Schottky barrier contact electrodes. Furthermore, it might achieve an ideal property about Ni/Au thickness, Schottky barrier heights, and photo current to dark current contrast ratios. The quantum efficiencies could come to 43% and 87% on the u-GaN and AlGaN/GaN superlattices (SLS) photodetectors. Following this, the well performances have been improved on the devices with the SiO2 layer that was fabricated by plasma enhanced chemical vapor deposition ( PECVD ). In addition, the study was about the different contacts electrodes from AZO and Ni/Au. As a result, there were some better performance of the responsivity, rejection ratio and light transmission on the AZO SL-GaN MSM photodetectors.

APA, Harvard, Vancouver, ISO, and other styles

46

Chaung, Jia-Zhang, and 莊家彰. "The Electrical Characteristics of Aluminum-Doped Zinc Oxide Nanorods and p-Type Silicon Heterojunctions." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/95970018908209550296.

Full text

Abstract:

碩士
大葉大學
電機工程學系
101
In this study, aluminum-doped zinc oxide (Al-doped ZnO) nanorods which were prepared with doping aluminum nitrate (Al(NO3)3‧9H2O) by solution growth method on p-type silicon substrate were fully characterized. First, ethyl alcohol (C2H5OH) was added to zinc acetate (Zn(CH3COO)2‧2H2O) to form a 0.0075M mixed solution. This mixed solution was then used to form a seeding layer on silicon substrate by spin coating. Subsequently, mixed solutions using 0.02M hexamethylenetetramine (C6H12N4), 0.02M zinc nitrate hexahydrate (Zn(NO3)2‧6H2O), and aluminum nitrate (Al(NO3)3‧9H2O) of various concentrations were prepared. And the growth was carried out in the mixed solution at 90˚C for two hours. As observed from field-emission scanning electron microscope (FE-SEM), the synthesized ZnO are hexagonal nanorods indeed. The chemical components of Al-doped ZnO nanorods were determined from energy diffraction spectroscopy (EDS) and are zinc, oxygen, and aluminum. The conductivity type for Al-doped ZnO nanorods is n-type indeed as was determined from Hall effect measurement, and the conductivity has been increased substantially by aluminum nitrate concentration; while mobility for majority carrier decreases with aluminum nitrate. As expected, the Al-doped ZnO nanorods prepared by aluminum nitrate of different concentrations also exhibit different I-V characteristics. In addition, the photoluminescence (PL) characteristic peak is in the range between 376.1nm and 379.4nm for Al-doped ZnO nanorods. Lastly, Al-doped ZnOnanorods were fabricated on a p-type silicon substrate to form a n-ZnO/p-Si heterojunction. This n-ZnO/p-Si heterojunction exhibits rectifying characteristics and its parameters such as reverse saturation current and ideality factor have been successfully determined.

APA, Harvard, Vancouver, ISO, and other styles

47

Fu, Chuni, and 傅珺怡. "The study of properties and structure of terbium oxide doped zinc aluminum phosphate glasses." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/19548738150162638733.

Full text

Abstract:

碩士
國立聯合大學
材料科學工程學系碩士班
99
This study explores optical, physical and structure properties based on zinc aluminum phosphate glass system (P2O5-ZnO-Al2O3) doped with different amounts of (terbium oxide), which changed the composition ratio between ZnO and P2O5. With increasing the terbium oxide and ZnO contents the density,refractive index and chemical durability of glasses increase, while the molar volume and thermal expansion coefficient decrease. Structure of glasses was analyzed by Fourier-transformed-infrared spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy in glasses system. With decreasing P2O5 content and the increase of network modifier (ZnO) leak the bridge oxygen bonds and the non-bridging oxygen bonds increase. In the optical analysis, with terbium oxide exceed 2.5 mol% the glasses exhibiters maximum intensity of blue emission from 5D3 to 7Fj level, while green emission from 5D4 level has increases linearly up to 9 mol% of Tb2O3. The concentration quenching of blue emission (5D3→7Fj) is attributed mainly to the cross-relaxation among the excited and nearest neighbor unexcited Tb3+ ions in the glass matrix. The fluorescence intensity increases with the increasing of ZnO content. The ZnO photogenerated electrons are trapped in the band gap defects which lie next to the Tb3+ excited states, and energy transferred to Tb3+ ion through radiation less process.

APA, Harvard, Vancouver, ISO, and other styles

48

Lin, Hsin Feng, and 林昕鋒. "Surface patterning of aluminum doped zinc oxide thin film improvement of light trapping efficiency." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/33708742632375441608.

Full text

Abstract:

碩士
南台科技大學
電機工程系
97
We design for a surface pattern on top of aluminum doped zinc oxide thin film deposed. The solar light through patterning surface increases the average path length and absorbing. The feasibility to fabricate such the surface patterning is discussed considering a finite available refractive index range. Four different circular and concave type were as one 5um diameter have two pitches as 10um and 12.5um that show out for each concave, other one diameter was 10um that have two pitches with 15um and 17.5um for each concave; also, circular were patterning on Zine Oxide surface. Based on four varies pattering schematic that we were used HCl etch achieve 200Å, 400Å and 500Å depth show out, under no surface patterning operator. That aluminum doped zinc oxide thin film deposited was thinner as 750 Å. This experimental used Silicon oxygen film deposited by E-Beam vaporization deposition sputter and amorphous silicon film deposited implement also. And final deposited by E-beam again for aluminum 2500Å counter electrode. The AM1.5 solar simulator instrument provides 100 mw/cm2 light to measured amorphous silicon film for different concave depth. That be based on different amorphous silicon concave textured and AZO film textured vs. light captured effect and I/V respond situation for decision. Due to the depth of concave of patterning were large and the diameter of concave were smaller, the roughness of concave would be contributing more photoelectron effect. Because of solar incident light through internal layer and generate many times reflect and reflect delay effect that achieve light absorb in the layer and increase light efficiency. So the Silicon Oxide and a-si deposition was improving the light absorbed for I/V result and roughness affect that cause of textural for this light trapping request. Based on the result of experiment that show out appearing I/V character due AZO films was 200 A depth and 5um diameter with pitches as 10um was formed and had 0.12 mA/cm2 photoelectron effect perform after I/V measurement. Normally, the 3mm distances compared with 6mm distances had more current search during I/V character was measurement. That longer distances for I/V measured that be cause of carriers recombined as high probably. Because of the result of the diffractive patterning conforms to the characteristic﹔therefore, the light reflection will enhance the efficiency of the solar cell to absorb light. Finally, we apply texture structure on the AZO film doped surface, in order to reduce the reflectance of incident light on the surface, increase the chance of the light transmitting into the cell, and then improve the efficiency of the solar cell. The thesis mainly treats the method of using grating to extend the duration of light in the solar cell. The thesis indicates that roughness is a diffractive element when the diffraction elements diffract light into the solar cell, and the diffractive grating can be reflected due to its diffractive feature.

APA, Harvard, Vancouver, ISO, and other styles

49

Huang, Hsiang-Chin, and 黃湘津. "Investigation on Source/Drain Electrodes of Amorphous Aluminum Zinc Tin Oxide Thin Film Transistors." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/94277922791959316672.

Full text

Abstract:

碩士
明新科技大學
電子工程研究所
100
In this research, we used Inverted Staggered type TFTs, which two different SnO2 targets with 25-nm-thick a-AZTO as channel layers deposited by radio frequency sputtering (RF sputtering) at room temperature. The transmission line method (TLM) was used to evaluate the effect of contact resistance. The electrical properties of AZTO TFTs used ITO, Ti, Au, Mo, Pt and Ni as electrodes were investigated. The smaller S/D contact resistance with Ni and Pt electrodes showed small contact resistance of 36~750 Ω-cm was examined. It is found that AZTO TFTs with Al electrodes had the worst contact resistance at before and after annealing. No matter SnO2 30% or SnO2 50% both has the same trend, the smaller contact resistance within smaller barrier height between electrode and channel layer. Several material analysis techniques, such as X-Ray Diffraction (XRD), atomic force microcopy (AFM), scanning electron microscopy (SEM), secondary ion mass spectrometer (SIMS), X-Ray photoelectron spectroscopy (XPS), etc. were utilized to discuss the crystallization and surface morphology of AZTO thin films. Electrical characteristics and conduction mechanisms of AZTO TFT devices were also investigated by I-V characteristic analysis.

APA, Harvard, Vancouver, ISO, and other styles

50

Lo, Yen-ming, and 羅晏明. "Research of the Work Function and Conductivity of Gradient Aluminum-doped zinc oxide thin." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/42735905953858740361.

Full text

Abstract:

碩士
國立雲林科技大學
電子與光電工程研究所碩士班
100
Transparent conducting oxides (TCO) thin films are used widely in many potential applications, e. g. light emitting diodes (LEDs), organic light emitting diodes (OLEDs), solar cell, liquid crystal displays (LCDs) and so on. In order to enhance these functions: one is the charge transfer between the transparent electrode layer, second is the hole transfer layer of OLED device and third is the work function controlling of TCO for solar cell. Resistance of ohm contacts and conduction of gradient transparent conducting oxides (GTCO) depend on surface potential. The work function is capabilities with respect to ionization potentials (electron affinities) and Fermi level positions which influence characteristics of transparent conducting oxides. The main factors, which are controlled by deposition conditions, of TCO’s work function are stoichiometry ratio, defects, and oxygen concentration. As we know the high work function always is accompanied with low conduction. Hence, the study investigated the work function of GTCO to promote the great performance on both conduction and transparency. ZnO material was used for the TCO film based on its wide range of Fermi level position, so aluminum-doped zinc oxide (AZO) was prepared for the fabricated of GTCO by pulsed DC magnetron sputtering. Surface potential, work function and Fermi-level were measured by ultraviolet photoelectron spectroscopy (UPS). The crystalline of GTCO films were examined by x-ray diffraction (XRD). Sheet resistances were measured by using of a four-point probe. Ultraviolet to infrared spectrum was measured by optical spectrometer. The results exhibited the work function could be adjusted maximum to 10%, the transmittance could be over 82%, and the resistivity could low to approximate 10-4ohm-cm. The gradient AZO was not only increased the conduction but also control the matching of work function. Anyway, it is a very promising technology which could be matched with anode to increase the conduction and transparent in these green devices.

APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic 'Aluminum zinc oxide'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles