Relevant bibliographies by topics / Aluminum zinc oxide

Academic literature on the topic 'Aluminum zinc oxide'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Aluminum zinc oxide"

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Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang, and Wei Jie Song. "Thermal Stability of Aluminum Doped Zinc Oxide Thin Films." Materials Science Forum 685 (June 2011): 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.
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Ryabko A. A., Mazing D.S., Bobkov A. A., Maximov A. I., Levitskii V. S., Lazneva E. F., Komolov A. S., Moshnikov V. A., and Terukov E. I. "Interface doping of zinc oxide nanorods." Physics of the Solid State 64, no. 11 (2022): 1657. http://dx.doi.org/10.21883/pss.2022.11.54187.408.

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The effect of an increase in the electrical conductivity of a system of zinc oxide nanorods by a factor of 105 during atomic layer deposition of a thin dielectric layer of aluminum oxide was found. It is shown that a change in the electrical conductivity of zinc oxide during atomic layer deposition of aluminum oxide on the surface is also observed for thin polycrystalline layers of zinc oxide. A study of polycrystalline layers of zinc oxide coated with aluminum oxide using ultraviolet and X-ray photoelectron spectroscopy is presented. Based on the results of photoelectron spectroscopy, two main factors for changing the electrical conductivity are proposed, which consist in the formation of a two-dimensional electron gas at the ZnO|Al2O3 interface and doping of the near-surface region of zinc oxide with aluminum atoms. Keywords: nanorods, zinc oxide, aluminum oxide, atomic layer deposition, transparent electrodes, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy.
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Рябко, А. А., Д. С. Мазинг, А. А. Бобков, А. И. Максимов, В. С. Левицкий, Э. Ф. Лазнева, А. С. Комолов, В. А. Мошников, and Е. И. Теруков. "Эффект интерфейсного легирования системы наностержней оксида цинка." Физика твердого тела 64, no. 11 (2022): 1681. http://dx.doi.org/10.21883/ftt.2022.11.53320.408.

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The effect of an increase in the electrical conductivity of a system of zinc oxide nanorods by a factor of 10^5 during atomic layer deposition of a thin dielectric layer of aluminum oxide was found. It is shown that a change in the electrical conductivity of zinc oxide during atomic layer deposition of aluminum oxide on the surface is also observed for thin polycrystalline layers of zinc oxide. A study of polycrystalline layers of zinc oxide coated with aluminum oxide using ultraviolet and X-ray photoelectron spectroscopy is presented. Based on the results of photoelectron spectroscopy, two main factors for changing the electrical conductivity are proposed, which consist in the formation of a two-dimensional electron gas at the ZnO/Al2O3 interface and doping of the near-surface region of zinc oxide with aluminum atoms.
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Kuo, Chin-Guo, Chi-Wu Huang, Jung-Hsuan Chen, and Yueh-Han Liu. "Fabrication of a Miniature Zinc Aluminum Oxide Nanowire Array Gas Sensor and Application for Environmental Monitoring." International Journal of Photoenergy 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/515268.

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A miniature n-type semiconductor gas sensor was fabricated successfully using zinc aluminum oxide nanowire array and applied to sense oxygen. The present study provided a novel method to produce zinc aluminum alloy nanowire 80 nm in diameter by the vacuum die casting technique and then obtain zinc aluminum oxide nanowire array using the thermal oxidation technique. The gas sensing properties were evaluated through the change of the sensitivity. The factors influencing the sensitivity of the gas sensor, such as the alloy composition, operating temperature, and oxygen concentration, were investigated further. Experimental results indicated that the maximum sensitivity could be acquired when the weight percentage of aluminum was 5% in zinc aluminum alloy at the operating temperature of200°C.
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Wai, Htet Su, and Chaoyang Li. "Fabrication of Well-Aligned ZnO Nanorods with Different Reaction Times by Chemical Bath Deposition Method Applying for Photocatalysis Application." Molecules 28, no. 1 (January 3, 2023): 397. http://dx.doi.org/10.3390/molecules28010397.

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Zinc oxide nanorods were grown on an aluminum-doped zinc oxide seeds layer using the chemical bath deposition method. The effects of growth reaction time on the structural, optical, and photocatalytic properties of zinc oxide nanorods were investigated. It was clearly observed that the growth direction of zinc oxide nanorods were dependent on the crystallinity of the as-deposited aluminum-doped zinc oxide seed layer. The crystallinity of the obtained zinc oxide nanorods was improved with the increase in reaction times during the chemical bath deposition process. The mechanism of zinc oxide nanorod growth revealed that the growth rate of nanorods was influenced by the reaction times. With increasing reaction times, there were much more formed zinc oxide crystalline stacked growth along the c-axis orientation resulting in an increase in the length of nanorods. The longest nanorods and the high crystallinity were obtained from the zinc oxide nanorods grown within 5 h. The optical transmittance of all zinc oxide nanorods was greater than 70% in the visible region. Zinc oxide nanorods grown for 5 h showed the highest degradation efficiency of methyl red under ultraviolet light and had a high first-order degradation rate of 0.0051 min−1. The photocatalytic mechanism was revealed as well.
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Lenz, Thomas, Moses Richter, Gebhard J. Matt, Norman A. Luechinger, Samuel C. Halim, Wolfgang Heiss, and Christoph J. Brabec. "Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide." Journal of Materials Chemistry C 3, no. 7 (2015): 1468–72. http://dx.doi.org/10.1039/c4tc01969e.

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In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.
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Raviendra D. and J. K. Sharma. "Electroless deposition of cadmium stannate, zinc oxide, and aluminum‐doped zinc oxide films." Journal of Applied Physics 58, no. 2 (July 15, 1985): 838–44. http://dx.doi.org/10.1063/1.336310.

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Murdoch, G. B., S. Hinds, E. H. Sargent, S. W. Tsang, L. Mordoukhovski, and Z. H. Lu. "Aluminum doped zinc oxide for organic photovoltaics." Applied Physics Letters 94, no. 21 (May 25, 2009): 213301. http://dx.doi.org/10.1063/1.3142423.

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Maleki, Ali, Masoud Panjepour, Behzad Niroumand, and Mahmood Meratian. "Mechanism of zinc oxide–aluminum aluminothermic reaction." Journal of Materials Science 45, no. 20 (May 28, 2010): 5574–80. http://dx.doi.org/10.1007/s10853-010-4619-9.

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Poznyak A. A., Knörnschild G. H., Pligovka A. N., and Larin T.D. "Anodic aluminum oxide formed in aqueous solutions of chelated complex zinc and cobalt compounds." Technical Physics 92, no. 13 (2022): 2049. http://dx.doi.org/10.21883/tp.2022.13.52221.110-21.

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The galvanostatic anodizing results of specially prepared high-purity aluminum in aqueous solutions of complex compounds K3[Co(C2O_4)_3] and K2[Zn(edta)] of various concentrations in the current density ranges 1.5-1.10·102 and 1.5-30 mA·cm-2, respectively. The kinetic features of anodizing have been established, indicating the occurrence of an oscillatory electrochemical process. Morphological features of a flaky and loose nature for K2[Zn(edta)] and monolithic for K3[Co(C2O_4)_3], uncharacteristic for anodic aluminum oxide, were revealed. The elemental composition, IR spectroscopic and photoluminescent characteristics of the formed oxides are shown. Keywords: anodic aluminum oxide, chelated complex compounds, anodizing.
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Dissertations / Theses on the topic "Aluminum zinc oxide"

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Shantheyanda, Bojanna P. "Characterization of aluminum doped zinc oxide thin films for photovoltaic applications." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4538.

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Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO[sub]2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film. The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
ID: 028916634; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (M.S.)--University of Central Florida, 2010.; Includes bibliographical references (p. 74-76).
M.S.
Masters
School of Electrical Engineering and Computer Science
Engineering and Computer Science
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Zou, Elva Xin. "Sol-gel processed zinc oxide for third generation photovoltaics." Thesis, University of Oxford, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.559838.

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This thesis presents an experimental study of the incorporation and optimization of sol-gel processed aluminum doped zinc oxide (AZO) thin films in solar cell devices. I first optimized the optoelectronic properties of AZO thin films by manipulating the dopant incorporation, choice of precursor chemicals and post deposition anneal treatments. Results showed that improved performance could be attributed to several factors, including improved charge carrier concentration, mobility and conductivity. AZO thin films with transmittance of over 90% and resistivity values of the order of 10-2 Ω•cm have been achieved. I also demonstrated the successful application of these AZO thin films in organic photovoltaics (OPV), to serve as an alternative to ITO electrodes. I demonstrated greater than 2-fold improvement in device efficiency through the modification of the front contact/polymer interface using zinc oxide buffer layers. This improved the charge selectivity of the electrodes and energy level alignment at the interface while reducing the recombination of separated charges and the device's series resistance. Finally, I showed that the efficiency of inverted ZnO/PbS quantum dots solar cells can be enhanced by optimizing the p-type PbS thickness, UV treating the n-type ZnO layer and exposing the devices in the dark to nitrogen. Both ZnO and AZO systems were studied, and efficiency enhancement were demonstrated for a range of Al content from 0 to O.4at.%.
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Adewole, Murthada Oladele. "Electrically Tunable Absorption and Perfect Absorption Using Aluminum Doped Zinc Oxide and Graphene Sandwiched in Oxides." Thesis, University of North Texas, 2012. https://digital.library.unt.edu/ark:/67531/metadc1404566/.

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Understanding the fundamental physics in light absorption and perfect light absorption is vital for device applications in detector, sensor, solar energy harvesting and imaging. In this research study, a large area fabrication of Al-doped ZnO/Al2O3/graphene/Al2O3/gold/silicon device was enabled by a spin-processable hydrophilic mono-layer graphene oxide. In contrast to the optical properties of noble metals, which cannot be tuned or changed, the permittivity of transparent metal oxides, such as Al-doped ZnO and indium tin oxide, are tunable. Their optical properties can be adjusted via doping or tuned electrically through carrier accumulation and depletion, providing great advantages for designing tunable photonic devices or realizing perfect absorption. A significant shift of Raman frequency up to 360 cm-1 was observed from graphene in the fabricated device reported in this work. The absorption from the device was tunable with a negative voltage applied on the Al-doped ZnO side. The generated absorption change was sustainable when the voltage was off and erasable when a positive voltage was applied. The reflection change was explained by the Fermi level change in graphene. The sustainability of tuned optical property in graphene can lead to a design of device with less power consumption.
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Adewole, Murthada Oladele. "Electrically Tunable Absorption and Perfect Absorption Using Aluminum-Doped Zinc Oxide and Graphene Sandwiched in Oxides." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404566/.

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Understanding the fundamental physics in light absorption and perfect light absorption is vital for device applications in detector, sensor, solar energy harvesting and imaging. In this research study, a large area fabrication of Al-doped ZnO/Al2O3/graphene/Al2O3/gold/silicon device was enabled by a spin-processable hydrophilic mono-layer graphene oxide. In contrast to the optical properties of noble metals, which cannot be tuned or changed, the permittivity of transparent metal oxides, such as Al-doped ZnO and indium tin oxide, are tunable. Their optical properties can be adjusted via doping or tuned electrically through carrier accumulation and depletion, providing great advantages for designing tunable photonic devices or realizing perfect absorption. A significant shift of Raman frequency up to 360 cm-1 was observed from graphene in the fabricated device reported in this work. The absorption from the device was tunable with a negative voltage applied on the Al-doped ZnO side. The generated absorption change was sustainable when the voltage was off and erasable when a positive voltage was applied. The reflection change was explained by the Fermi level change in graphene. The sustainability of tuned optical property in graphene can lead to a design of device with less power consumption.
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Huang, Bin. "Mechanical characterization of thin films /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?MECH%202005%20HUANG.

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Chan, Ray Yu Wai. "Optical and electrical properties of aluminum-doped ZnO." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/174.

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In the past few years, “green technologies and touch screen technologies for portable devices has came to hot topic in consumer market. The demand for transparent conducting oxides (TCO) is increasing continuously. Therefore, the potential replacement of indium tin oxide (ITO), which is the most widely used TCO in industry, by aluminum zinc oxide (AZO) draws much attention in order to solve the problem of shortage of ITO one day due to the consisting of rare-earth element. In this work, electrical and optical properties of AZO had been characterized according to different sputtering parameters such as oxygen contents, working pressures and gas flow ratios. Physics of electrical conduction and optical transparency of AZO films were revealed and analyzed in order to set up a more complete relationship between mechanism and performance. Meanwhile, a comparison of sensitivity between AZO and zinc oxide (ZnO) to sputtering environment had been made and behaviors of AZO at low temperature had been presented. Optimum sputtering conditions for AZO had been established as a function of sputtering time and the film resistivity reached down to 7 x 10-4 Ω·cm while film transmittance was above 85% when t = 140 mins having film thickness about 610 nm. Degradation of AZO had been investigated. Application of AZO in OLED fabrication had been carried out after film refinement and device performance had been given. Finally, simulation of OLED structure was done for better device performance
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Kuo, Fang-Ling. "Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc84233/.

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ZnO has generated interest for flexible electronics/optoelectronic applications including transparent thin film transistors (TFTs). For this application, low temperature processes that simultaneously yield good electrical conductivity and optical transparency and that are compatible with flexible substrates such as plastic, are of paramount significance. Further, gate oxides are a critical component of TFTs, and must exhibit low leakage currents and self-healing breakdown in order to ensure optimal TFTs switching performance and reliability. Thus, the objective of this work was twofold: (1) develop an understanding of the processing-structure-property relationships of ZnO and high-κ BaTa2O6 and Al2O3 (2) understand the electronic defect structure of BaTa2O6 /ZnO and Al2O3/ZnO interfaces and develop insight to how such interfaces may impact the switching characteristics (speed and switching power) of TFTs featuring these materials. Of the ZnO films grown by atomic layer deposition (ALD), pulsed laser deposition (PLD) and magnetron sputtering at 100-200 °C, the latter method exhibited the best combination of n-type electrical conductivity and optical transparency. These determinations were made using a combination of photoluminescence, photoluminescence excitation, absorption edge and Hall measurements. Metal-insulator-semiconductor devices were then fabricated with sputtered ZnO and high-κ BaTa2O6 and Al2O3 and the interfaces of high-κ BaTa2O6 and Al2O3 with ZnO were analyzed using frequency dependent C-V and G-V measurements. The insulator films were deposited at room temperature by magnetron sputtering using optimized processing conditions. Although the Al2O3 films exhibited a lower breakdown strength and catastrophic breakdown behavior compared to BaTa2O6/ZnO interface, the Al2O3/ZnO interface was characterized by more than an order of magnitude smaller density of interface traps and interface trapped charge. The BaTa2O6 films in addition were characterized by a significantly higher concentration of fixed oxide charge. The transition from accumulation to inversion in the Al2O3 MIS structure was considerably sharper, and occurred at less than one tenth of the voltage required for the same transition in the BaTa2O6 case. The frequency dispersion effects were also noticeably more severe in the BaTa2O6 structures. XPS results suggest that acceptor-like structural defects associated with oxygen vacancies in the non-stoichiometric BaTa2O6 films are responsible for the extensive electrical trapping and poor high frequency response. The Al2O3 films were essentially stoichiometric. The results indicate that amorphous Al2O3 is better suited than BaTa2O6 as a gate oxide for transparent thin film transistor applications where low temperature processing is a prerequisite, assuming of course that the operation voltage of such devices is lower than the breakdown voltage. Also, the operation power for the devices with amorphous Al2O3 is lower than the case for devices with BaTa2O6 due to the smaller fixed oxide charges and interface trap density.
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Liu, Hanxiao. "Studies of efficient and stable organic solar cells based on aluminum-doped zine oxide transparent electrode." HKBU Institutional Repository, 2014. https://repository.hkbu.edu.hk/etd_oa/34.

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Organic solar cells (OSCs) have attracted significant attention due to their potential of large area solution fabrication capability at low-cost. For bulk heterojunction (BHJ) OSCs, a thin film of transparent conducting indium tin oxide (ITO), coated on glass or flexible plastic substrate, is widely used as a front electrode. However, indium is not abundant on Earth. Its price has increased continuously over the past 10 years and will likely become an obstacle for the commercialization of OSCs at low cost. Aluminum-doped zinc oxide (AZO) is a promising ITO alternative due to its advantages of high electric conductivity, optical transparency, non-toxicity and low cost. However, reports on OSCs using AZO electrode are quite limited, due to the relatively lower power conversion efficiency (PCE) of AZO-based OCSs as compared to that of ITO-based OCSs. This work focused on studies of high performance AZO-based OSCs through AZO surface modification, absorption enhancement and process optimization. The optical and electronic properties of AZO film including transmittance, sheet resistance, surface morphology and surface work function were characterized. AZO-based OSCs with conventional and inverted structures were fabricated. It was found that AZO-based OSCs with inverted structure demonstrated superior performance than the ones with conventional structure. The inverted structure avoids the use of acidic PEDOT:PSS hole transporting layer, allows the improving of the absorbance of the OSCs and therefore its efficiency. An AZO front transparent cathode was used for application in high performance inverted BHJ OSCs. The photoactive layer consisted a blend of poly[[4,8-bis[(2- ethylhexyl)oxy] benzo [1,2-b:4,5-b'] dithiophene-2,6- diyl][3-fluoro- 2-[(2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl]](PTB7):3'H-Cyclopropa[8,25][5,6]fullerene- C70- D5h(6)-3'-butanoicacid, 3'-phenyl-, methyl ester (PC70BM). A structurally identical control OSC having an ITO front cathode was also fabricated for comparison studies. The structure of OSCs was optimized to achieving absorption enhancement in the active layer. AZO and ITO were modified with a 10 nm thick solution-processed ZnO interlayer to facilitate the efficient electron extraction. The results revealed that bilayer AZO/ZnO and the ITO/ZnO cathodes possess similar electron extraction property. AZO layer has a transparency cutoff at wavelength < 380 nm, results in a slight decrease in the short-circuit current density (JSC). However, the decrease in JSC is very small because the main energy of solar irradiation falls in the spectrum with wavelength > 380 nm. It shows that AZO-based OSCs have a promising PCE of 6.15%, which is slightly lower than that of a control ITO-based OSC (6.57%). AZO-based OSCs, however, demonstrate an obvious enhancement in the stability under an ultraviolet (UV)-assisted acceleration aging test. The significant enhancement in the stability of AZO-based OSCs arises from the tailored absorption of AZO electrode in wavelength < 380 nm, which serves as a UV filter to inhibit an inevitable degradation process in ITO-based OSCs due to the UV irradiation. In order to further investigate the degradation mechanism of OSCs under UV exposure, the change in charge collection characteristics of the OSCs made with ITO/ZnO and AZO/ZnO front cathode before and after UV exposure was examined. It was found that there was an obvious decrease in the charge extraction efficiency of ITO-based OSCs after UV exposure, while there was no observable change in the charge extraction efficiency of OSCs made with AZO/ZnO cathode under the same acceleration aging test. This work demonstrates that AZO is a suitable ITO alternative for application in OSCs, offering an improved device stability, comparable PCE and cell fabrication processes with an attractive commercial potential.
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Pant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.

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Walker, Justin I. "Spectroscopic Analysis of Materials for Orthopaedic and Energy Conversion Applications." University of Akron / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=akron1226948982.

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Books on the topic "Aluminum zinc oxide"

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K, Kokula Krshina Hari, ed. Effects of Combined Addition of Aluminum Oxide, Fly Ash, Carbon and Yttrium on Density and Hardness of ZA27 Zinc Alloy: ICIEMS 2014. India: Association of Scientists, Developers and Faculties, 2014.

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Hüpkes, Jürgen. Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2006.

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ZnO bao mo zhi bei ji qi guang, dian xing neng yan jiu. Shanghai Shi: Shanghai da xue chu ban she, 2010.

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Book chapters on the topic "Aluminum zinc oxide"

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Yahya, Noorhana, Poppy Puspitasari, and Noor Rasyada Ahmad Latiff. "Hardness Improvement of Dental Amalgam Using Zinc Oxide and Aluminum Oxide Nanoparticles." In Advanced Structured Materials, 9–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-31470-4_2.

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Lin, Dan Dan, Wei Pan, and Hui Wu. "Luminescent Properties of Aluminum Doped Zinc Oxide Nanofibers Prepared by Electrospinning." In Key Engineering Materials, 2173–75. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.2173.

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Roy, Dhananjoy. "Aluminum-Doped Nano-Zinc Oxide Can Act as Good Carrier for Biomedicine." In Lecture Notes in Bioengineering, 145–52. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-6915-3_15.

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Cao, Xuejiao, Ting-an Zhang, Yan Liu, Weiguang Zhang, and Simin Li. "Oxidation Study of Zinc Sulfite on the Removal of Sulfur Dioxide from Aluminum Electrolysis Flue Gas by Zinc Oxide." In Light Metals 2020, 620–25. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-36408-3_84.

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Xue, Shu Wen, and Xiao Tao Zu. "Investigation of Aluminum Content on the Properties of Sol-Gel-Derived Zinc Oxide Thin Films." In Materials Science Forum, 1173–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1173.

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Anita Singh and Vandna Luthra. "Modulating Structural, Optical and Electrical Properties of Zinc Oxide by Aluminium Doping." In Springer Proceedings in Physics, 1255–65. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_191.

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Ravi Dhas, C., R. Venkatesh, A. Jennifer Christy, D. Arivukarasan, B. Anitha, D. David Kirubakaran, A. Juliat Josephine, P. Sudhagar, A. Moses Ezhil Raj, and C. Sanjeeviraja. "Structural, Optical and Ethanol Gas Sensing Performance of Aluminium Doped Zinc Oxide (AZO) Thin Films by Nebulizer Spray Technique." In Springer Proceedings in Physics, 351–65. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44890-9_33.

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Ismail, Ahmad Syakirin, Mohamad Hafiz Mamat, and Mohamad Rusop Mahmood. "Aluminum- and Iron-Doped Zinc Oxide Nanorod Arrays for Humidity Sensor Applications." In Nanostructured Materials - Fabrication to Applications. InTech, 2017. http://dx.doi.org/10.5772/67661.

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"Piezoelectric Zinc Oxide and Aluminum Nitride Films for MicroŽuidic and Biosensing Applications." In Biological and Biomedical Coatings Handbook, 350–95. CRC Press, 2016. http://dx.doi.org/10.1201/b10871-13.

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Szyszka, B. "Transparent and conductive aluminum doped zinc oxide films prepared by mid-frequency reactive magnetron sputtering." In Coatings on Glass 1998, 249–54. Elsevier, 1999. http://dx.doi.org/10.1016/b978-044450247-6.50050-3.

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Conference papers on the topic "Aluminum zinc oxide"

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Eskandar, M., V. Ahmadi, SH Ahmadi, and F. Ghorab. "Raman spectroscopy in aluminum-doped zinc oxide nanorods." In 2008 2nd IEEE International Nanoelectronics Conference. IEEE, 2008. http://dx.doi.org/10.1109/inec.2008.4585622.

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Shaukat, Bushra, Hadiya Ameen, Syed Wilayat Husain, M. Farooq Zafar, and Asifa Nigar. "Synthesis and characterization of aluminum modified zinc oxide powder." In 2019 16th International Bhurban Conference on Applied Sciences and Technology (IBCAST - 2019). IEEE, 2019. http://dx.doi.org/10.1109/ibcast.2019.8667213.

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Shariffudin, S. S., M. N. Masri, Abdul Aziz A, M. F. Malek, and M. Rusop. "Photoresponse characteristics of aluminum doped zinc oxide thin film." In 2010 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2010. http://dx.doi.org/10.1109/smelec.2010.5549548.

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Mikhailov, M. M., V. V. Neshchimenko, Chundong Li, and Jacob I. Kleiman. "Radiation Stability of Zinc Oxide Pigment Modified by Zirconium Oxide and Aluminum Oxide Nanopowders." In PROTECTION OF MATERIALS AND STRUCTURES FROM SPACE ENVIRONMENT: Proceedings of the 9th International Conference: Protection of Materials and Structures From Space Environment. AIP, 2009. http://dx.doi.org/10.1063/1.3076886.

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Malek, M. F., S. A. Arbain, M. H. Mamat, M. Z. Sahdan, M. Z. Musa, Z. Khusaimi, M. Rusop, and A. S. Rodzi. "Photoresponse characteristics of nanostructured aluminum doped Zinc oxide thin films." In 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA). IEEE, 2011. http://dx.doi.org/10.1109/icedsa.2011.5959097.

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Awalludin, M., M. T. Ali, and M. H. Mamat. "Transparent antenna using aluminum doped zinc oxide for wireless application." In 2015 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE). IEEE, 2015. http://dx.doi.org/10.1109/iscaie.2015.7298323.

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Hwang, Namgyung, Yooseong Lim, Sehyeong Lee, Jeong Seok Lee, and Moonsuk Yi. "Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer." In 2018 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2018. http://dx.doi.org/10.23919/elinfocom.2018.8330674.

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Kuo, Shou-Yi, Fang-I. Lai, Wei-Chun Chen, Woei-Tyng Lin, Hung-Wen Huang, and Kang-Yuan Lee. "Fabrication and characterization of nano-structured aluminum-doped zinc oxide films." In 2011 IEEE 4th International Nanoelectronics Conference (INEC). IEEE, 2011. http://dx.doi.org/10.1109/inec.2011.5991697.

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Chen, S. F., Y. L. Lee, S. Cho, K. M. Huang, Y. H. Chu, and M. C. Wu. "Metal-oxide Thin Film Transistors with Co-sputtering Novel Aluminum Zinc Oxide Yttrium Channel Layer." In 2009 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2009. http://dx.doi.org/10.7567/ssdm.2009.p-9-3.

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Peng, Chien-Yi, Hema Sudarsanam, Mohammad M. Hamasha, Susan Lu, Tara P. Dhakal, and Charles R. Westgate. "Performance of aluminum-doped zinc oxide thin films under bending fatigue conditions." In 2012 IEEE Long Island Systems, Applications and Technology Conference (LISAT). IEEE, 2012. http://dx.doi.org/10.1109/lisat.2012.6223196.

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