Academic literature on the topic 'Aluminum-oxynitride'
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Journal articles on the topic "Aluminum-oxynitride"
Dehuang, Wang, and Guo Liang. "An aluminum oxynitride film." Thin Solid Films 198, no. 1-2 (March 1991): 207–10. http://dx.doi.org/10.1016/0040-6090(91)90339-y.
Full textCorbin, Normand D. "Aluminum oxynitride spinel: A review." Journal of the European Ceramic Society 5, no. 3 (January 1989): 143–54. http://dx.doi.org/10.1016/0955-2219(89)90030-7.
Full textDu, Xinhua, Shiyue Yao, Xihai Jin, Yumei Long, Bo Liang, and Weifeng Li. "Photocatalytic properties of aluminum oxynitride (AlON)." Materials Letters 161 (December 2015): 72–74. http://dx.doi.org/10.1016/j.matlet.2015.08.069.
Full textDAI, Wenbin, Akira YAMAGUCHI, Wei LIN, Junji OMMYOJI, Jingkun YU, and Zongshu ZOU. "Oxidation Behavior of Magnesium Aluminum Oxynitride." Journal of the Ceramic Society of Japan 115, no. 1339 (2007): 195–200. http://dx.doi.org/10.2109/jcersj.115.195.
Full textHartnett, T. M., S. D. Bernstein, E. A. Maguire, and R. W. Tustison. "Optical properties of ALON (aluminum oxynitride)." Infrared Physics & Technology 39, no. 4 (June 1998): 203–11. http://dx.doi.org/10.1016/s1350-4495(98)00007-3.
Full textMessier, Donald R., Robert P. Gleisner, and Ronald E. Rich. "Yttrium-Silicon-Aluminum Oxynitride Glass Fibers." Journal of the American Ceramic Society 72, no. 11 (November 1989): 2183–86. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06055.x.
Full textDravid, V. P., J. A. Sutliff, A. D. Weslwood, M. R. Nolts, and C. E. Lyman. "Centrosymmetric and nonsymmorphic aluminum oxynitride spinel." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 512–13. http://dx.doi.org/10.1017/s0424820100154536.
Full textNakao, Wataru, Hiroyuki Fukuyama, and Kazuhiro Nagata. "Thermodynamic Stability of γ-Aluminum Oxynitride." Journal of The Electrochemical Society 150, no. 2 (2003): J1. http://dx.doi.org/10.1149/1.1537757.
Full textWang, Paul W., Jin-Cherng Hsu, Yung-Hsin Lin, and Huang-Lu Chen. "Nitrogen bonding in aluminum oxynitride films." Applied Surface Science 256, no. 13 (April 2010): 4211–14. http://dx.doi.org/10.1016/j.apsusc.2010.02.004.
Full textWen, Jin Song, Tie Cheng Lu, Jian Qi Qi, Ji Cheng Zhou, Wei Pang, Hai Ping Wang, Jun Feng He, Zhi Jun Liao, and Deng Xue Wu. "Preparation of Aluminum Oxynitride Powder by Solid State Reaction Method." Key Engineering Materials 368-372 (February 2008): 435–37. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.435.
Full textDissertations / Theses on the topic "Aluminum-oxynitride"
Tucto, Salinas Karem Yoli. "Optical and luminiscent properties of terbium / ytterbium doped aluminum oxynitride and terbium doped aluminum nitride thin films." Doctoral thesis, Pontificia Universidad Católica del Perú, 2020. http://hdl.handle.net/20.500.12404/16766.
Full textTesis
Henkel, Karsten. "Electrical investigations on praseodymium oxide aluminum oxynitride containing metal insulator semiconductor stacks and on metal ferroelectric insulator semiconductor structures consisting of poly(vinylidene fluoride trifluoroethylene) /." Aachen : Shaker, 2009. http://d-nb.info/995916187/04.
Full textHenkel, Karsten [Verfasser]. "Electrical Investigations on Praseodymium Oxide/Aluminum Oxynitride Containing Metal-Insulator-Semiconductor Stacks and on Metal-Ferroelectric-Insulator-Semiconductor Structures Consisting of Poly[vinylidene fluoride trifluoroethylene] / Karsten Henkel." Aachen : Shaker, 2009. http://d-nb.info/1159833559/34.
Full textStolyarchuk, Natalia. "Transmission electron microscopy study of polarity control in III-N films grown on sapphire substrates." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/18791.
Full textPolarity is a critical issue for III-nitrides material system that has an impact on the quality and properties of epitaxial films and the performance of nitride-based devices. But the understanding of the elementary mechanisms that are responsible for establishing metal or nitrogen polarity of the films grown on nonpolar substrate is lacking. The existing concepts are based on empirical observations and contain ambiguous results. One of the main reasons for that is the lack of precise characterization tools, allowing localized determination of polarity and atomic structure of layers, at the time, when main concepts for polarity control were established. In this work we develop a concept of polarity control in AlN and GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. The polarity of the layers is studied by aberration corrected HRTEM and high resolution high-angle annular dark field (HAADF) scanning TEM. The analysis of the experimental investigations yields the following principal results about: (i) the mechanism that governs polarity selection; (ii) the relation between sapphire surface nitridation and Al-polar domains in N-polar AlN films; (iii) the possibility of controlled switching the layers polarity from N to Al by oxygen annealing. The understanding of these mechanisms by which polarity is controlled opens up the possibility for polarity engineering in nitride films and can give a clue to understanding polarity control in other material systems (e.g. oxides).
La polarité est une question critique pour le système de matériaux III-nitrures, qui a un impact sur la qualité des films épitaxies et la performance des dispositifs à base de nitrure. Mais la compréhension des mécanismes élémentaires responsables de l'établissement de la polarité N ou métallique des films sur le substrat non-polaire manque. Les concepts existants sont basés sur des observations empiriques et contiennent des résultats ambigus. Une des raisons principales est le manque d'outils analytiques, permettant la détermination localisée de la polarité et de la structure atomique des couches à l'époque, lorsque les concepts de contrôle de la polarité ont été établis. Dans ce travail, nous développons un concept de contrôle de la polarité dans les couches AlN et GaN épitaxies sur substrat de saphir par EPVOM. La polarité des couches est étudiée par microscopie électronique en transmission (MET) haute résolution corrigée des aberrations et par microscope électronique à balayage en transmission en champ sombre (HAADF-STEM). L'analyse des investigations expérimentales donne les principaux résultats suivants : (i) le mécanisme qui régit la sélection de la polarité; (ii) la relation entre la nitruration de la surface et les domaines de polarité Al dans les films d'AlN N-polaire; (iii) possibilité d’inverser la polarité N de films d’AlN de polarité mixte en introduisant un recuit sous oxygène. La compréhension de mécanisme par lequel la polarité est contrôlée ouvre les possibilités d'une ingénierie de polarité dans les films de nitrure et peut donner une idée de la compréhension du contrôle de la polarité dans d'autres systèmes de matériaux (par exemple, les oxydes).
Stolyarchuk, Natalia. "Étude par microscopie électronique en transmission du contrôle de la polarité des films III-N déposés sur saphir." Thesis, Université Côte d'Azur (ComUE), 2017. http://www.theses.fr/2017AZUR4099/document.
Full textPolarity is a critical issue for III-nitrides material system that has an impact on the quality of epitaxial films and the performance of nitride-based devices. But the understanding of the elementary mechanisms that are responsible for establishing metal or nitrogen polarity of the films on nonpolar substrate is lacking. The existing concepts are based on empirical observations and contain ambiguous results. One of the main reasons for that is the lack of precise analytical tools, allowing localized determination of polarity and atomic structure of layers, at the time, when main concepts for polarity control were established. In this work we develop a concept of polarity control in AlN and GaN layers grown by MOVPE on sapphire substrates. The polarity of the layers is studied by aberration corrected HRTEM and high resolution high-angle annular dark field (HAADF) scanning TEM. The analysis of the experimental investigations yields the following principal results: (i) mechanism that governs polarity selection; (ii) relation between sapphire surface nitridation and Al-polar domains in N-polar AlN films; (iii) possibility of controlled switching the layers polarity from N to Al by oxygen annealing.Understanding of this mechanism by which polarity is controlled opens up the possibilities for polarity engineering in nitride films and can give a clue to understanding polarity control in other material systems (e.g. oxides)
LIN, YUNG-HSIN, and 林永鑫. "Research of Aluminum Oxynitride Thin Films Deposited by Ion Beam Sputtering." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/10545116537026670287.
Full text輔仁大學
物理學系
95
Aluminum Oxynitride thin films(AlOxNy) exhibit high transmittance, high resistivity, variable refractive index(2.1~1.68) and high energy gap(＞6.2). The method of ion beam assisted deposition (IAD) has been wildly used in the AlOxNy thin films deposition process due to nitrogen hardly inhabits in thin film without using IAD. In this study, AlOxNy thin films are deposited by ion beam sputtering (IBS) system at room temperature. The advantages of IBS system are high ion beam energy and stable deposition rate.The N atoms content of AlOxNy thin films come from high energy nitrogenous ions, and the O atoms content are controlled by different pressure of oxygen. The optical properties of AlOxNy change as the pressure of oxygen changes. The optical properties of AlOxNy have successfully controlled in this study, and AlOxNy thin films are expediently used in the optical thin film design, especially in the UV light range.
Guan, Sheng-yong, and 官聲詠. "Preparation of oxynitride films on 6061 Aluminum alloy through micro-arc oxidation." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/76991909682828087465.
Full text國立臺灣科技大學
化學工程系
102
Employing a bipolar pulsed high voltage power supply, we overlay an oxynitride film on top of the 6061-T6 aluminum alloy substrate through micro arc technology with current control. The electrolyte generally contains urea, sodium hydroxide, sodium hexametaphosphate, lithium hydroxide. And we study the influences of electrolyte composition on the film, which is targeted for electrical insulation. We compare surface microstructure and phase differences of two oxynitride films prepared in the electrolytes of high and low urea concentration, namely, 500 and 20 g/l. The electrolyte of high urea concentration raises the nitrogen content of the oxynitride film, but alters the morphology and phase drastically. The nitrogen-rich film contains a cubic phase of Al3O3N oxynitride and the gamma phase of aluminum oxide. However, the nitrogen-poor film contains the Al3O3N oxynitride and the alpha and gamma phases of aluminum oxide. It is speculated that the alpha aluminum phase has been formed by melting and recrystallization at expense of gamma phase through local high energy micro arc. Influences of other ingredients in the electrolyte are described as follows. Addition of sodium hexametaphosphate, 1 g/l, stabilizes the surface appearance of micro arc. Addition of lithium hydroxide, 1 g/l, enhances the nitrogen content, and the breakdown strength as well. In addition, the electrolyte requires sufficient ion conductivity, ~30 mS/cm, and high pH value ~12.
石崇甫. "Anti-Reflection Coatings made with Aluminum Oxynitride Films by High Power Impulsed Magnetron Sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/697q4z.
Full text逢甲大學
光電學系
104
In the future, the optical coating industry not only the specific property attain the purpose but need the following three items. The First, produce the thin films with good optical properties, mechanism and environmental stability. The Second produce optical multilayers designs with other advantages. The last is all the properties of component need to meet the industrial and public demand. The thin films materials need to strike a balance between prospective process and popular demand. The mixture thin films in this article is made by starting material of aluminum and deposited by high power impulsed magnetron sputtering technology, that is worthy of experiment and futurity. Utilizing HiPIMS to deposit aluminum nitride and aluminum oxynitride thin films. In this study, We use homemade-HiPIMS system to deposit high- and low- refractive index materials. Through different N2/Ar flow rate ratio and Ton/Toff ratio for Pulse duration to deposit AlN thin films. The power of aluminum target is 800W, Ton/Toff : 50/783 μs, N2/Ar flow rate is 16/50 sccm. The refractive index of AlN thin films at 550 nm is 2.047. The extinction coefficient is less than 1.745 when the wavelength is after 550 nm. The AlN thin films transform into AlON thin films by flowing O2. The refractive index could be varied from 2.047 to 1.694 at 550 nm. The extinction coefficient is less than 2×〖10〗^(-4). The residual stress is approximately at +1133 to -490 MPa. The research on anti-reflective films As mentioned above, the high refractive index of AlN, mid-refractive index of AlON and low-refractive index of SiO2 thin films compose anti-reflection films with wide wavelength. This study design three kinds of anti-reflection films. One consists of AlN and SiO2. Another consists of Nb2O5 and SiO2. Both of them are 6-layers. The other is composed of AlON/AlN/SiO2 which is 3-layers. This less-layer design has good optical and mechanism properties. When the incident angle is 5˚ and wavelength is between 400 nm – 700 nm, average reflective index is less than 1%. In the aspect of mechanism, the hardness of 6 layers-design is 10.85 GPa. 3-layers-design is 11.34 GPa.
Hung, Jie-Ruei, and 洪傑瑞. "Preparation of silicon-based and lithium aluminum-based oxynitride phosphors by solid-phase synthesis." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/10365681351536226431.
Full text義守大學
材料科學與工程學系
104
In order to improve the color temperature and thermal stability of current white LED, the yellow-emitting Ca-α-SiAlON:Eu2+ phosphors and red-emitting lithium-aluminum-based oxynitride phosphors were prepared by solid state synthesis. The thesis is divided into two parts, the first part discussed about the high temperature solid state synthesis of Ca-α-SiAlON:Eu2+ oxynitride phosphors, the effect of carbon addition, calcination temperature changes, concentration of europium, silicon to aluminum ratio, calcium source and flow rate of N2-H2 atmosphere on the luminescent charachersitics and microstructures were further studied in details. Subsequently, the second part considered about that the solid state reaction method was used to prepare the europium-doped lithium aluminum oxynitride phosphors by changing the calcination temperature (1000 °C to 1350 °C), holding time and gas flow rate, and the relationship between microstructure andluminescent characteristics were also explored. At first, XRD results showed that carbon addition can help the growth of β-SiAlON phase, but the emission strength tended to reduce. From the SEM image, after calcination at 1620℃ for 6hrs, the particle size of phosphors doped with 2% Eu2O3 was about 5μm. When Eu2O3 dopant was increase to 4%, the rod-like particles are observed; once further raised to 8%, rods disappeared and particles begun to occur molten phenomenon. Under a 460nm excitation, the emission intensity at 580-585nm and red shift is increased with the europium concentration. It was found that phosphors after 1620 ℃ calcination exhibited the highest emission intensity. When the temperature dropped to 1470 ℃, the presence of residual silicon nitride, aluminum nitride and calcium carbonate phase resulted in the poor emission due to incomplete reaction. Secondly, the air flow rate of nitrogen hydrogen gas (100sccm ~ 300sccm) also influenced the characteristic of Ca-α-SiAlON: Eu2 +, it may be due to the fact the reflux valve reached a certain pressure (0.86kPa) and gas is discharged, raw materials may be in contact with the outside air during this period. For the Ca-α-SiAlON: Eu2 + phosphors doping with 8% Eu2O3 after calcination at 1620 ℃ for 6hrs, when the flow rate changed, there was no significant difference in the XRD patterns. However, the PL results indicated that 200 sccm yielded the highest luminous intensity, when the flow rate increased to 300 sccm , red shift was observed in emission spectrum. Furthermore, the effect of Si/Al ratio (1,2,3,4) were explored. As Si/Al ratio was 1, and it can not form Ca-α-SiAlON phase. The Si/Al ratio increased to more than 3, Ca0.8Si9.2Al2.8O1.2N14 .8 phase was the main crystalline phase and phosphors exhibited a emission peak at 581nm-586nm under a 460nm excitation. The orde of luminous intensity of phosphors is : Si / Al = 2> Si / Al = 4> Si / Al = 3> Si / Al = 1, and the Si / Al = 4 had a significant blue shift. In addition, calcium aluminum ratio increased to 1.5 times but to make the emission intensity decrease, indicating that the increase of Ca did not enhance the PL intensity. When calcium hydride was used as Ca source, XRD patterns revealed the existence of β-SiAlON phase. The higher the Eu concentration, the stronger the intensity of the diffraction peak for β-SiAlON phase. And the higher concentration of europium could promote β-SiAlON phase formation. The thermal quenching of Ca-α-SiAlON system was measured from 30℃ to 180 ℃, the emission intensity dropped to about the original 90%-92%, it can conclude that Ca-α-SiAlON system had good thermal stability. The Si/Al ratio and Ca/Al ratio had no significant effect on the thermal stability. The oxygen content of Ca-α-SiAlON doped 8% Eu2O3 showed the lowest value at 1470 ℃ and significantly increased when the temperature raised to 1620 ℃. For the Eu-doped lithium aluminum based oxynitrides, the results showed that when the calcination temperature and the flow rate increased, its emission intensity increased. The increase of temperature would cause the loss of lithium. The lithium-containing crystalline phase exhibited red emission, the half-width of emission peak at 617nm was only ~60 nm.
Malatji, Kemeridge Tumelo. "Computer simulation studies of spinel LiMn2O4 and spinel LiNiXMn2-XO4 (0≤x≤2)." Thesis, 2019. http://hdl.handle.net/10386/3348.
Full textLiMn2O4 spinel (LMO) is a promising cathode material for secondary lithium-ion batteries which, despite its high average voltage of lithium intercalation, suffers crystal symmetry lowering due to the Jahn-Teller active six-fold Mn3+ cations. Although Ni has been proposed as a suitable substitutional dopant to improve the energy density of LiMn2O4 and enhance the average lithium intercalation voltage, the thermodynamics of Ni incorporation and its effect on the electrochemical properties of this spinel are not fully understood. Firstly, structural, electronic and mechanical properties of spinel LiMn2O4 and LiNixMn2-xO4 have been calculated out using density functional theory employing the pseudo-potential plane-wave approach within the generalised gradient approximation, together with Virtual Cluster Approximation. The structural properties included equilibrium lattice parameters; electronic properties cover both total and partial density of states and mechanical properties investigated elastic properties of all systems. Secondly, the pressure variation of several properties was investigated, from 0 GPa to 50 GPa. Nickel concentration was changed and the systems LiNi0.25Mn1.75O4, LiNi0.5Mn1.5O4 LiNi0.75Mn1.25O4 and LiNi0.875Mn1.125O4 were studied. Calculated lattice parameters for LiMn2O4 and LiNi0.5Mn1.5O4 systems are consistent with the available experimental and literature results. The average Mn(Ni)-O bond length for all systems was found to be 1.9 Å. The bond lengths decreased with an increase in nickel content, except for LiNi0.75Mn1.25O4, which gave the same results as LiNi0.25Mn1.75O4. Generally, analysis of electronic properties predicted the nature of bonding for both pure and doped systems with partial density of states showing the contribution of each metal in our systems. All systems are shown to be metallic as it has been previously observed for pure spinel LiMn2O4, and mechanical properties, as deduced from elastic properties, depicted their stabilities. Furthermore, the cluster expansion formalism was used to investigate the nickel doped LiMn2O4 phase stabilities. The method determines stable multi-component crystal structures and ranks metastable structures by the enthalpy of formation while iv maintaining the predictive power and accuracy of first-principles density functional methods. The ground-state phase diagram with occupancy of Mn 0.81 and Ni 0.31 generated various structures with different concentrations and symmetries. The findings predict that all nickel doped LMO structures on the ground state line are most likely stable. Relevant structures (Li4Ni8O16, Li12MnNi17O48, Li4Mn6Ni2O16, Li4Mn7NiO16 and Li4Mn8O16) were selected on the basis of how well they weighed the cross-validation (CV) score of 1.1 meV, which is a statistical way of describing how good the cluster expansion is at predicting the energy of each stable structure. Although the structures have different symmetries and space groups they were further investigated by calculating the mechanical and vibrational properties, where the elastic constants and phonon vibrations indicated that the structures are stable in accordance with stability conditions of mechanical properties and phonon dispersions. Lastly, a computer program that identifies different site occupancy configurations for any structure with arbitrary supercell size, space group or composition was employed to investigate voltage profiles for LiNixMn2-xO4. The density functional theory calculations, with a Hubbard Hamiltonian (DFT+U), was used to study the thermodynamics of mixing for Li(Mn1-xNix)2O4 solid solution. The results suggested that LiMn1.5Ni0.5O4 is the most stable composition from room temperature up to at least 1000K, which is in excellent agreement with experiments. It was also found that the configurational entropy is much lower than the maximum entropy at 1000K, indicating that higher temperatures are required to reach a fully disordered solid solution. The maximum average lithium intercalation voltage of 4.8 eV was calculated for the LiMn1.5Ni0.5O4 composition which correlates very well with the experimental value. The temperature has a negligible effect on the Li intercalation voltage of the most stable composition. The approach presented here shows that moderate Ni doping of the LiMn2O4 leads to a substantial change in the average voltage of lithium intercalation, suggesting an attractive route for tuning the cathode properties of this spinel.
National Research Foundation (NRF)
Book chapters on the topic "Aluminum-oxynitride"
Xue, Jun Ming, Qian Liu, Tong Ping Xiu, Li Li Ma, Ming Fang, and Lin Hua Gui. "Hot-Pressed Translucent Aluminum Oxynitride (AlON) Ceramics." In High-Performance Ceramics V, 450–52. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.450.
Full textUchiyama, A., N. Hotta, R. Watanabe, and R. Miyamoto. "Preparation of Translucent Aluminum Oxynitride Ceramics and Ar-HIP." In Improved Ceramics through New Measurements, Processing, and Standards, 177–82. 735 Ceramic Place, Westerville, Ohio 43081: The American Ceramic Society, 2012. http://dx.doi.org/10.1002/9781118371480.ch24.
Full textLee, Jae Ryeong, Ikkyu Lee, Hun Saeng Chung, Jong Gwan Ahn, Dong Jin Kim, and Byoung Gyu Kim. "Self-Propagating High-Temperature Synthesis for Aluminum Oxynitride (AlON)." In Materials Science Forum, 662–65. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-995-4.662.
Full textWen, Jin Song, Tie Cheng Lu, Jian Qi Qi, Ji Cheng Zhou, Wei Pang, Hai Ping Wang, Jun Feng He, Zhi Jun Liao, and Deng Xue Wu. "Preparation of Aluminum Oxynitride Powder by Solid State Reaction Method." In High-Performance Ceramics V, 435–37. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.435.
Full textWang, Hai Ping, Deng Xue Wu, Wei Pang, Jian Qi Qi, Ji Cheng Zhou, Jin Song Wen, Zi Meng Cheng, Ya Wen, Zhi Jun Liao, and Tie Cheng Lu. "Influence of Raw Materials on the Carbothermal Synthesis of Single-Phase Aluminum Oxynitride Powder." In High-Performance Ceramics V, 438–40. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.438.
Full textTropf, William J., and Michael E. Thomas. "Aluminum Oxynitride (ALON) Spinel." In Handbook of Optical Constants of Solids, 777–87. Elsevier, 1997. http://dx.doi.org/10.1016/b978-012544415-6.50079-0.
Full textTROPF, WILLIAM J., and MICHAEL E. THOMAS. "Aluminum Oxynitride (ALON) Spinel." In Handbook of Optical Constants of Solids, 777–87. Elsevier, 1998. http://dx.doi.org/10.1016/b978-0-08-055630-7.50048-1.
Full textConference papers on the topic "Aluminum-oxynitride"
Dandekar, D. P., B. A. M. Vaughan, W. G. Proud, Mark Elert, Michael D. Furnish, Ricky Chau, Neil Holmes, and Jeffrey Nguyen. "SHEAR STRENGTH OF ALUMINUM OXYNITRIDE." In SHOCK COMPRESSION OF CONDENSED MATTER - 2007: Proceedings of the Conference of the American Physical Society Topical Group on Shock Compression of Condensed Matter. AIP, 2008. http://dx.doi.org/10.1063/1.2833120.
Full textHartnett, Thomas M., Steven D. Bernstein, Edward A. Maguire, and Randal W. Tustison. "Optical properties of ALON (aluminum oxynitride)." In AeroSense '97, edited by Randal W. Tustison. SPIE, 1997. http://dx.doi.org/10.1117/12.277053.
Full textWeingarten, N. Scott, Iskander G. Batyrev, and Betsy M. Rice. "Nonequilibrium molecular dynamics simulations of aluminum oxynitride." In SHOCK COMPRESSION OF CONDENSED MATTER - 2011: Proceedings of the Conference of the American Physical Society Topical Group on Shock Compression of Condensed Matter. AIP, 2012. http://dx.doi.org/10.1063/1.3686516.
Full textYagodin, V. V., A. V. Ishchenko, B. V. Shulgin, Yu F. Kargin, N. S. Akhmadullina, and A. S. Lysenkov. "Radioluminescent properties of Eu2+-doped aluminum oxynitride." In PHYSICS, TECHNOLOGIES AND INNOVATION (PTI-2016): Proceedings of the III International Young Researchers’ Conference. Author(s), 2016. http://dx.doi.org/10.1063/1.4962608.
Full textThornhill, T. F. "Polycrystalline Aluminum Oxynitride Hugoniot and Optical Properties." In SHOCK COMPRESSION OF CONDENSED MATTER - 2005: Proceedings of the Conference of the American Physical Society Topical Group on Shock Compression of Condensed Matter. AIP, 2006. http://dx.doi.org/10.1063/1.2263285.
Full textMartin, C., and B. Cales. "Synthesis And Hot Pressing Of Transparent Aluminum Oxynitride." In SPIE 1989 Technical Symposium on Aerospace Sensing, edited by Paul Klocek. SPIE, 1989. http://dx.doi.org/10.1117/12.960759.
Full textGoldman, Lee M., Thomas M. Hartnett, Joseph M. Wahl, Robert J. Ondercin, and Karen R. Olson. "Recent advances in aluminum oxynitride (ALON) optical ceramic." In Aerospace/Defense Sensing, Simulation, and Controls, edited by Randal W. Tustison. SPIE, 2001. http://dx.doi.org/10.1117/12.439195.
Full textGou, Zhenhui, and Francis Placido. "Aluminum oxynitride rugate filters grown by reactive rf sputtering." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408382.
Full textTawaragi, K., H. Iihoshi, T. Watanabe, N. Saito, and N. Hotta. "PREPARATION OF TRANSLUCENT ALUMINUM OXYNITRIDE CERAMICS AND THEIR PROPERTIES." In Processing and Fabrication of Advanced Materials VIII. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811431_0071.
Full textYagodin, V. V., G. F. Gilyazetdinova, A. V. Ishchenko, B. V. Shulgin, Yu F. Kargin, N. S. Akhmadullina, and A. S. Lysenkov. "Thermoluminescence of aluminum oxynitride doped with Ce3+ and Eu2+ ions." In 3RD ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2017 (EGM 2017). Author(s), 2017. http://dx.doi.org/10.1063/1.5002974.
Full textReports on the topic "Aluminum-oxynitride"
Wilantewicz, Trevor E. Failure Behavior of Glass and Aluminum Oxynitride (AlON) Tiles Under Spherical Indenters. Fort Belvoir, VA: Defense Technical Information Center, May 2010. http://dx.doi.org/10.21236/ada538251.
Full textStrassburger, Elmar. High-Speed Photographic Study of Wave Propagation and Impact Damage in Transparent Aluminum Oxynitride (AION). Fort Belvoir, VA: Defense Technical Information Center, September 2006. http://dx.doi.org/10.21236/ada457205.
Full text