Relevant bibliographies by topics / Aluminium Nitride

Academic literature on the topic 'Aluminium Nitride'

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Published: 4 June 2021
Last updated: 25 May 2024

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Journal articles on the topic "Aluminium Nitride"

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Ryabov, A. V. "Medium-Carbon Free-Cutting Steel." Materials Science Forum 946 (February 2019): 47–52. http://dx.doi.org/10.4028/www.scientific.net/msf.946.47.

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The paper presents theoretical and experimental studies of the formation processes of boron nitride, aluminium nitride, aluminium oxide and manganese sulphide inclusions in a free-cutting steel. Fact Sage software was used to model the behaviour of non-metallic inclusions. Formation temperatures and the amount of key inclusions in steel were calculated. Formation order of inclusions is as follows: aluminium oxide > boron nitride > manganese sulphide > aluminium nitride. The object of study was the A45AR grade steel in 1.1–1.2 kg ingots. It was melted in an induction furnace, and aluminium, nitrided ferrosilicon and ferroboron were added after deoxidation before tapping. Quality estimation included chemical composition, macro-and microstructure, the character and shape of non-metallic inclusions. The finished metal contained fine and uniformly distributed inclusions of boron nitride. Qualitative and quantitative analysis of boron nitrides distribution in metal matrix showed that they were present both as individual and complex compounds, mostly of spherical shape. The size of BN inclusions varied from 0.18 to 6.52 μm. The amount of boron added to steel did not affect the size of MnS non-metallic inclusions.
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Uvarov, V. M., E. M. Rudenko, Yu V. Kudryavtsev, M. V. Uvarov, I. V. Korotash, and M. V. Dyakin. "Electronic Structure of Aluminium Nitride and Its Solid Solutions with Oxygen and Aluminium." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 46, no. 3 (May 13, 2024): 199–210. http://dx.doi.org/10.15407/mfint.46.03.0199.

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Wei, Jun Cong, and Jun Bo Tu. "Effect of Aluminium Powder on the Hot Mechanical Properties of Corundum-Silicon Nitride Composites." Advanced Materials Research 189-193 (February 2011): 3960–63. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.3960.

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Based on the Al-O-N phase stable diagram and adopting inverse reaction sintering process, corundum-silicon nitride composite refractories were prepared using corundum, silicon nitride, clay and aluminium powder as the main starting materials. The specimens were sintered at 1600 for 3 hours under air atmosphere with different oxygen partial pressure obtained by addition of different amount of aluminium powder. The effects of aluminium powder additions(0, 4wt.%, 8 wt.% and 12 wt.% respectively) on the hot modulus of rupture were investigated .The phase composition and microstructure were tested by means of XRD, SEM and EDAS.The results showed that aluminium would be oxidized, nitrided and displaced as aluminium powder increased during sintering, which reduced the oxygen partial pressure in the specimen. The hot modulus of rupture (HMOR) increased considerably due to large amounts of fibrous sialon formed.
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Hou, Qinghua, Raj Mutharasan, and Michael Koczak. "Feasibility of aluminium nitride formation in aluminum alloys." Materials Science and Engineering: A 195 (June 1995): 121–29. http://dx.doi.org/10.1016/0921-5093(94)06511-x.

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Tangen, Inger Lise, Tor Grande, Y. D. Yu, R. Høier, and M. A. Einarsrud. "Preparation and Mechanical Characterisation of Aluminium Nitride-Titanium Nitride and Aluminium Nitride-Silicon Carbide Composites." Key Engineering Materials 206-213 (December 2001): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/kem.206-213.1153.

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Kent, Damon, Graham B. Schaffer, and John Drennan. "Novel Aluminium Nitride Surface Coatings Formed on Aluminium." Materials Science Forum 561-565 (October 2007): 571–75. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.571.

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A new nitriding method has been devised which requires only a simple vacuum furnace and enables direct nitridation of solid aluminium without any prior surface treatment. It can be used to produce thick aluminium nitride surface layers on aluminium, under nitrogen at atmospheric pressure. A critical element of the process is the use of a magnesium vapour source that reduces/disrupts the natural, protective oxide film on the aluminium surface and facilitates nitriding. The nitride surface layers form through two distinct modes, one growing outward from the aluminium plate surface and the other growing into the aluminium. Studies of the nitride layers utilizing optical microscopy, TEM, SEM, XRD and XPS have been conducted. Details of the composition, structure and growth as well as possible mechanisms for the nitride formation are presented. Understanding of the reaction may have important implications for the production of wear resistant coatings on bulk Al as well as for the production of Al/AlN composites.
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Iwanciw, J., D. Podorska, and J. Wypartowicz. "Simulation of Oxygen and Nitrogen Removal from Steel by Means of Titanium and Aluminum." Archives of Metallurgy and Materials 56, no. 3 (September 1, 2011): 635–44. http://dx.doi.org/10.2478/v10172-011-0069-x.

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Simulation of Oxygen and Nitrogen Removal from Steel by Means of Titanium and Aluminum Authors' computer program was employed in the simulation of the course of steel refining by means of simultaneously used aluminium and titanium. The mass and chemical composition of liquid steel and non-metallic precipitates, were calculated at constant or variable temperature. The influence of assumed nitrides form on the results of simulation was determined. Nitrides may be considered either as separate phases or as the components of non-metallic solution. The stoichiometry of titanium oxide obtained also influences the results of simulation. Parallel analysis of steel refining was carried out with the use of FactSage program. As a result of calculations the subsequent states of equilibrium between steel and non-metallic phase were determined. It was found that aluminium and titanium nitrides may exist only as the components of oxide-nitride solution, not as separate phases.
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Wilson, F. G., and T. Gladman. "Aluminium nitride in steel." International Materials Reviews 33, no. 1 (January 1988): 221–86. http://dx.doi.org/10.1179/imr.1988.33.1.221.

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Koryakin A.A., Kukushkin S. A., Osipov A. V., and Sharofidinov Sh. Sh. "Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates." Physics of the Solid State 64, no. 1 (2022): 113. http://dx.doi.org/10.21883/pss.2022.01.52497.209.

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The nucleation mechanism of aluminum nitride films grown by the method ofhydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) istheoretically analyzed. The temperature regions and vapor pressure regionsof components are determined in which the island growth mechanism and thelayer-by-layer growth mechanism are realized. The theoretical conclusionsare compared with the experimental data. The morphology of aluminum nitridefilm on 3C-SiC/Si(111) at the initial growth stage is investigated by themethod of scanning electron microscopy. The methods of controlling thechange of the growth mechanism from the island growth to the layer-by-layergrowth are proposed. Keywords: aluminium nitride, gallium nitride, silicon carbide on silicon, method HVPE, nucleation, wide-bandgap semiconductors, heterostructures.\
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Ichinose, Noboru. "Aluminium Nitride Ceramics for Substrates." Materials Science Forum 34-36 (January 1991): 663–67. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.663.

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Dissertations / Theses on the topic "Aluminium Nitride"

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Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.
Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.
Includes bibliographical references.
Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.
The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher.
The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained.
Mode of access: World Wide Web.
Various pagings ill
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Taylor, Matthew Bruce, and matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films." RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.

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Thin film coatings are used to improve the properties of components and products in such diverse areas as tool coatings, wear resistant biological coatings, miniature integrated electronics, micro-mechanical systems and coatings for optical devices. This thesis focuses on understanding the development of intrinsic stress and microstructure in coatings of the technologically important materials of aluminium nitride (AlN) and titanium vanadium nitride (TiVN) deposited by filtered cathodic arc deposition. Thin films of AlN are fabricated under a variety of substrate bias regimes and at different deposition rates. Constant substrate bias was found to have a significant effect on the stress and microstructure of AlN thin films. At low bias voltages, films form with low stress and no preferred orientation. At a bias voltage of -200 V, the films exhibited the highest compressive stress and contained crystals preferentially oriented with their c axis in the plane of the film. At the highest bias of -350 V, the film forms with low stress yet continue to contain crystallites with their c axis constrained to lie in the plane of the film. These microstructure changes with bias are explained in terms of an energy minimisation model. The application of a pulsed high voltage bias to a substrate was found to have a strong effect on the reduction of intrinsic stress within AlN thin films. A model has been formulated that predicts the stress in terms of the applied voltage and pulsing rate, in terms of treated volumes known as thermal spikes. The greater the bias voltage and the higher the pulse rate, the greater the reduction in intrinsic stress. At high pulsing and bias rates, a strong preference for the c axis to align perpendicular to the substrate is seen. This observation is explained by dynamical effects of the incident ions on the growing film, encouraging channelling and preferential sputtering. For the first time, the effect of the rate of growth on AlN films deposited with high voltage pulsed bias was investigated and found to significantly change the stress and microstructure. The formation of films with highly tensile stress, highly compressive stress and nano-composites of AlN films containing Al clusters were seen. These observations are explained in terms of four distinct growth regions. At low rates, surface diffusion and shadowing causes highly porous structures with tensile stress; increased rates produced Al rich films of low stress; increasing the growth rate further led to a dense AlN film under compressive stress and the highest rates produce dense, low stress, AlN due to increased levels of thermal annealing. Finally this thesis analyses the feasibility of forming ternary alloys of high quality TiVN thin films using a dual cathode filtered cathodic arc. The synthesised films show exceptional hardness (greater than either titanium nitride or vanadium nitride), excellent mixing of the three elements and interesting optical properties. An optimum concentration of 23% V content was found to give the highest stress and hardness.
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Xiao, Xiaoling, and S3060677@student rmit edu au. "Characterization of nano-structured coatings containing aluminium, aluminium-nitride and carbon." RMIT University. Applied Sciences, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20081217.100453.

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There is an every increasing need to develop more durable and higher performing coatings for use in a range of products including tools, devices and bio-implants. Nano-structured coatings either in the form of a nanocomposite or a multilayer is of considerable interest since they often exhibit outstanding properties. The objective of this thesis was to use advanced plasma synthesis methods to produce novel nano-structured coatings with enhanced properties. Coatings consisting of combinations of aluminum (Al), aluminum nitride (AlN) and amorphous carbon (a-C) were investigated. Cathodic vacuum arc deposition and unbalanced magnetron sputtering were used to prepare the coatings. By varying the deposition conditions such as substrate bias and temperature, coatings with a variety of microstructures were formed. A comprehensive range of analytical methods have been employed to investigate the stoichiometry and microstructure of the coatings. These include Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy, Auger Electron Spectroscopy, X-ray diffraction and Raman spectroscopy. In addition to the investigation of microstructure, the physical properties of the coatings were measured. Residual stress has been recognized as an important property in the study of thin film coatings since it can greatly affect the quality of the coatings. For this reason, residual stress has been extensively studied here. Hardness measurements were performed using a nano indentation system, which is sensitive to the mechanical properties of thin films. This thesis undertook the most comprehensive investigation of the Al/AlN multilayer system. A major finding was the identification of the conditions under which layers or nanocomposite form in this system. A model was developed based on energetics and diffusion limited aggregation that is consistent with the experimental data. Multilayers of a-C and Al were also found to form nanocomposites. No hardness enhancement as a function of layer thickness or feature size was observed in either the Al/AlN or a-C/a-C systems. It was found that the most important factor which determines hardness is the intrinsic stress, with films of high compressive stress exhibiting the highest hardness. Nano-structured multilayers of alternating high and low density a-C were investigated. For a-C multilayers prepared using two levels of DC bias, evidence of ion beam induced damage was observed at the interfaces of both the low and high density layers. In addition, the structure of the high density (ta-C, known as tetrahedral amorphous carbon) layers was found to be largely unchanged by annealing. These results extend our understanding of how a-C form from energetic ion beams and confirms the thermal stability of ta-C in a multilayer. This thesis also presented the first attempt to synthesis a-C multilayered films with a continuously varying DC bias in sinusoidal pattern. The resulting films were shown to have a structurally graded interface between layers and verified that ion energy and stress are the most important factors which determine the structure of a-C films.
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Boudjelida, Boumedienne. "Metal-aluminium gallium nitride Schottky contacts formation." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19373/.

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X-ray photoelectron spectroscopy (XPS) has been used to investigate the effect of various surface cleaning procedures on Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30. Results show that wet chemical etch in a HF solution followed by a 600°C in-situ annealing under ultra-high vacuum (UHV) is very effective in removing oxygen from the surface. Downward band bending of 0.87 eV and 0.99 eV also occurs between the solvents-treated and the annealed Al[x]Ga[1]-[x]N surfaces for x = 0.20 and 0.30, respectively. Increasing in-situ temperature annealing in increments of 100°C up to 600°C shows a re-ordering at the surface and subsurface with Ga and A1 moving deeper in the surface, whereas N goes to the topsurface. In addition, the Fermi level movement observed when increasing the temperature could be interpreted by the change in surface stoichiometry or by a creation of vacancies due to the ex-situ surface treatment which may, in turn, be activated/deactivated by temperature annealing. Atomic hydrogen clean (AHC) followed by 400°C in-situ UHV annealing is also found effective in removing O and C from Al[x]Ga[1]-[x]N surface (x = 0.20).The formation of Ag/Al[x]Ga[1]-[x]N (x = 0.20) and Ni/Al[x]Ga[1]-[x]N (x = 0.30) interfaces, where the substrate was subjected to HF etch followed by 600°C in-situ UHV anneal, has been studied by a combination of XPS, atomic force microscope (AFM), scanning tunneling microscope (STM) and current-voltage (I-V) measurements. XPS results suggest a layer-by-layer followed by islanding growth mode of Ag and Ni on Al[x]Ga[1]-[x]N. This is confirmed by the presence of metal islands at the metal-covered surfaces using AFM and in-situ STM. XPS investigation shows a more abrupt, well-defined Ag/Al[x]Ga[1]-[x]N interface compared to Ni/Al[x]Ga[1]-[x]N. Ag deposition on Al[x]Ga[1]-[x]N substrates causes upward band bending of 0.30 eV and 0.40 eV between the "clean" surface and the last metal deposition, for x = 0.20 and 0.30, respectively, while Ni induces downward band bending of 0.3 eV for x = 0.20. I-V measurements of Ag/Al[x]Ga[1]-[x]N (x = 0.30), where the substrate was cleaned using N[+] bombardment followed by 600°C annealing, yield a Schottky barrier height of 0.82 eV with ideality factor n = 1.21.XPS and I-V results on Ag/Al[x]Ga[1]-[x]N and Ni/Al[x]Ga[1]-[x]N are compared and discussed in terms of current models of Schottky barrier formation.
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Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.

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Cheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.

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Rebholz, Claus. "Synthesis and properties of titanium aluminium boron nitride coatings." Thesis, University of Hull, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310329.

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Norton, Murray Grant. "Characterisation and thick film metallisation of aluminium nitride substrates." Thesis, Imperial College London, 1989. http://hdl.handle.net/10044/1/47594.

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Ligl, Jana [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Aluminium scandium nitride grown by metalorganic chemical vapour deposition." Freiburg : Universität, 2020. http://d-nb.info/1225294118/34.

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Martin, David Michael. "Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-100957.

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In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. This has hastened the need for alternatives to ceramic resonators due to their limits in device size and performance, which in turn, has led to development of the thin film electro-acoustics industry with surface acoustic wave (SAW) and bulk acoustic wave (BAW) filters now fabricated in their millions. Further, this new technology opens the way for integrating the traditionally incompatible integrated circuit (IC) and electro-acoustic (EA) technologies, bringing about substantial economic and performance benefits. In this thesis the compatibility of aluminium nitride (AlN) to IC fabrication is explored as a means for furthering integration issues. Various issues have been explored where either tailoring thin film bulk acoustic resonator (FBAR) design, such as development of an improved solidly mounted resonator (SMR) technology, and use of IC technology, such as chemical mechanical polishing (CMP) or nickel silicide (NiSi), has made improvements beneficial for resonator fabrication or enabled IC integration. The former has resulted in major improvements to Quality factor, power handling and encapsulation respectively. The later has provided alternative methods to reduce electro- or acoustomigration, reduced device size, for plate waves, supplied novel low acoustic impedance material for high power applications and alternative electrodes for use in high temperature sensors. Another method to enhance integration by using the piezoelectric material, AlN, in the IC side has also been explored. Here methods for analysing AlN film contamination and stoichiometry have been used for analysis of AlN as a high-k dielectric material. This has even brought benefits in knowledge of film composition for use as a passivation material with SiC substrates, investigated in high power high frequency applications. Lastly AlN has been used as a buried insulator material for new silicon-on-insulator substrates (SOI) for increased heat conduction. These new substrates have been analysed with further development for improved performance indicated.
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Books on the topic "Aluminium Nitride"

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Burrows, Clare Louise. Processing of aluminium nitride. Uxbridge: Brunel University, 1992.

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Perry, Duncan. Optimisation of a closed-field unbalanced mangnetron sputter process: Titanium aluminium nitride. Salford: University of Salford, 1995.

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Liles, K. J. Mechanical and physical properties of particulate composites in the system titanium nitride-alumina-aluminum nitride. Washington, D.C: U.S. Dept. of the Interior, Bureau of Mines, 1989.

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Liles, K. J. Mechanical and physical properties of particulate composites in the system titanium nitride-alumina-aluminum nitride. Washington, DC: Dept. of the Interior, 1989.

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Janik, Jerzy Franciszek. Charakterystyka reakcji i procesów wytwarzania specyficznych form materiałowych azotku glinu - AIN oraz azotku boru - BN z prekursorów chemicznych. 2nd ed. Kraków: Wydawnictwa AGH, 1994.

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Chaudhuri, Reet. Integrated Electronics on Aluminum Nitride. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-17199-4.

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Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburg: Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

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Jamarani, F. Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BRL26). Mississauga, Ont: Canadian Fusion Fuels Technology Project, 1994.

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Adams, Arnold. Analytical methods for determining products from thermal decomposition of aluminum nitrate nonahydrate. Pittsburgh, Pa: U.S. Dept. of the Interior, Bureau of Mines, 1987.

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Cooper, John H. Process-dependence of properties in high thermal conductivity aluminum nitride substrates for electronic packaging. Monterey, Calif: Naval Postgraduate School, 1991.

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Book chapters on the topic "Aluminium Nitride"

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Rudolph, Stephan. "Boron Nitride Release Coatings." In Aluminium Cast House Technology, 163–70. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118806364.ch16.

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Wildhack, S., and Fritz Aldinger. "Freeze Casting of Aluminium Nitride." In Advances in Science and Technology, 407–12. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-01-x.407.

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Kent, D., G. B. Schaffer, and John Drennan. "Novel Aluminium Nitride Surface Coatings Formed on Aluminium." In Materials Science Forum, 571–75. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.571.

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Radic, Vlado N. "Explosive Consolidation of Aluminium Nitride Powder." In Advanced Science and Technology of Sintering, 489–95. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4419-8666-5_69.

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Philippov, Philip, and N. Nicolov. "Hybrid Integrated Circuits on Polycrystalline Aluminium Nitride." In Micro System Technologies 90, 261–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_36.

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Keller, Kevin, Thomas Schlothauer, Marcus Schwarz, Erica Brendler, Kristin Galonska, Gerhard Heide, and Edwin Kroke. "Properties of Shock-Synthesized Rocksalt-Aluminium Nitride." In Ceramic Transactions Series, 305–11. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118491867.ch31.

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Das, Soham, and Bibhu Prasad Swain. "Investigation of Titanium Aluminium Nitride (TiAlN): A Review." In Lecture Notes in Electrical Engineering, 147–58. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_16.

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Chen, Bin, and Wei Pan. "Dielectric Properties of Boron Nitride-Aluminium Nitride Composites Prepared by Spark Plasma Sintering." In Key Engineering Materials, 796–98. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.796.

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Wuhrer, Richard, and Wing Yiu Yeung. "Magnetron Co-Sputtering of Nanostructured Chromium Aluminium Nitride Coatings." In Materials Science Forum, 4001–4. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.4001.

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Krnel, Kristoffer, and Tomaž Kosmač. "The Hydrolysis of Aluminium Nitride: A Problem or an Advantage." In Ceramic Transactions Series, 39–46. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470640845.ch6.

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Conference papers on the topic "Aluminium Nitride"

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Desideri, Daniele, Tommaso Cavallin, Alvise Maschio, and Matteo Poggeschi Belloni. "Aluminium nitride films on glass." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997430.

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Ruemenapp, T. "Dielectric breakdown in aluminium nitride." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990870.

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Desideri, Daniele, Enrico Bernardo, and Alvise Maschio. "Reactive magnetron sputtered aluminium nitride films." In 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2015. http://dx.doi.org/10.1109/nano.2015.7388985.

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Dagdag, S., T. Lebey, S. Dinculescu, J. Saiz, and E. Dutarde. "High temperature behaviours of aluminium nitride." In 2007 European Conference on Power Electronics and Applications. IEEE, 2007. http://dx.doi.org/10.1109/epe.2007.4417337.

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Pickup, I. M. "The Failure of Aluminium Nitride Under Shock." In Shock Compression of Condensed Matter - 2001: 12th APS Topical Conference. AIP, 2002. http://dx.doi.org/10.1063/1.1483651.

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Olivares, J., J. Malo, S. González, E. Iborra, I. Izpura, M. Clement, A. Sanz-Hervás, J. L. Sánchez-Rojas, and P. Sanz. "Tunable mechanical resonator with aluminium nitride piezoelectric actuation." In Photonics Europe, edited by Hakan Ürey and Ayman El-Fatatry. SPIE, 2006. http://dx.doi.org/10.1117/12.664444.

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Tarala, Vitaly, Aleksandr Altakhov, Mikhail Ambartsumov, Vladimir Martens, and Mikhail Shevchenko. "Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method." In 2016 14th International Baltic Conference on Atomic Layer Deposition (BALD). IEEE, 2016. http://dx.doi.org/10.1109/bald.2016.7886528.

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Jin, Tiening, and Pao Tai Lin. "Mid-infrared aluminium nitride waveguides for label-free sensing." In 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2017. http://dx.doi.org/10.1109/nano.2017.8117381.

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Ricart, T., P.-P. Lassagne, S. Boisseau, G. Despesse, A. Lefevre, C. Billard, S. Fanget, and E. Defay. "Macro energy harvester based on Aluminium Nitride thin films." In 2011 IEEE International Ultrasonics Symposium (IUS). IEEE, 2011. http://dx.doi.org/10.1109/ultsym.2011.0480.

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Olivares, J., M. Clement, E. Iborra, L. Vergara, J. L. Sanchez-Rojas, J. Vazquez, and P. Sanz. "Simulation, fabrication, and testing of aluminium nitride piezoelectric microbridges." In Microtechnologies for the New Millennium 2005, edited by Carles Cane, Jung-Chih Chiao, and Fernando Vidal Verdu. SPIE, 2005. http://dx.doi.org/10.1117/12.608228.

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Reports on the topic "Aluminium Nitride"

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Napier, J. Recycle of nitric acid and aluminum nitrate. Office of Scientific and Technical Information (OSTI), April 1991. http://dx.doi.org/10.2172/5548809.

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Wallace, J. S., E. R. Jr Fuller, and S. W. Freiman. Mechanical properties of aluminum nitride substrates. Gaithersburg, MD: National Institute of Standards and Technology, 1996. http://dx.doi.org/10.6028/nist.ir.5903.

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Batyrev, Iskander G., Chi-Chin Wu, Peter W. Chung, N. S. Weingarten, and Kenneth A. Jones. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates. Fort Belvoir, VA: Defense Technical Information Center, February 2013. http://dx.doi.org/10.21236/ada571048.

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Janik, J. F., R. L. Wells, J. L. Coffer, J. V. St John, and W. T. Pennington. Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocompositesvia Transamination of M(NMe2)32, M = Al, Al/Ga (1/1). Fort Belvoir, VA: Defense Technical Information Center, May 1998. http://dx.doi.org/10.21236/ada345603.

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Delegard, Calvin, Carolyn Pearce, Mateusz Dembowski, Michelle MV Snyder, Ian Leavy, Steven Baum, and Matthew Fountain. Aluminum Hydroxide Solubility in Sodium Hydroxide Solutions Containing Nitrite/Nitrate of Relevance to Hanford Tank Waste. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1660940.

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Sandra Schujman and Leo Schowalter. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's. Office of Scientific and Technical Information (OSTI), October 2010. http://dx.doi.org/10.2172/1014019.

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Perdieu, L. H. Thick film fabrication of aluminum nitride microcircuits. Final report. Office of Scientific and Technical Information (OSTI), March 1994. http://dx.doi.org/10.2172/10143124.

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McCauley, James W. Structure and Properties of Aluminum Nitride and AlON Ceramics. Fort Belvoir, VA: Defense Technical Information Center, May 2002. http://dx.doi.org/10.21236/ada402960.

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QUEST INTEGRATED INC KENT WA. In-Situ Composites in the Aluminum Nitride-Alumina System,. Fort Belvoir, VA: Defense Technical Information Center, January 1995. http://dx.doi.org/10.21236/ada299416.

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de Almeida, V. F., and J. C. Rojo. Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth. Office of Scientific and Technical Information (OSTI), June 2002. http://dx.doi.org/10.2172/940542.

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