Journal articles: 'AlN'

1

Mazzafera, Paulo, Kátia Viviane Gonçalves, and Milton Massao Shimizu. "Control of Allantoin Accumulation in Comfrey." Natural Product Communications 3, no. 9 (September 2008): 1934578X0800300. http://dx.doi.org/10.1177/1934578x0800300905.

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Comfrey, a medicinal herb with healing properties that are attributed to allantoin, was studied in this work. The accumulation and metabolism of allantoin (ALN) and its degradation product, allantoic acid (ALA), were examined. ALN was the main ureide in leaves and roots, with young leaves showing the highest content. ALA was the predominant ureide in the xylem sap, and together with ALN represented 27% of the nitrogen (N) transported in the xylem. Amino acids were the most abundant N-compound in the xylem sap with a high proportion of glutamine. [14C]Xanthine feeding experiments showed that ALN and ALA were actively formed in leaves and roots by degradation of xanthine. Both xanthine and uric acid were rapidly degraded to form ALN and ALA. Enzyme studies showed that calculated V max /K m are low for allantoinase and alantoicase, supporting the results from the feeding experiments, and indicating that accumulation of ALN in comfrey is due to a low capacity for the enzymatic degradation of ureides.

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Seppänen, Heli, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, and Harri Lipsanen. "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition." Materials 12, no. 3 (January 28, 2019): 406. http://dx.doi.org/10.3390/ma12030406.

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Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

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Vasilyev, V., J. Cetnar, B. Claflin, G. Grzybowski, K. Leedy, N. Limberopoulos, D. Look, and S. Tetlak. "Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications." MRS Advances 1, no. 39 (2016): 2711–16. http://dx.doi.org/10.1557/adv.2016.510.

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ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

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4

Frimpong-Manso, Ellen Serwaa, and Liancheng Wang. "High Reflectivity AlN/Al1−xInxN Distributed Bragg Reflectors across the UV Regions by Sputtering." Crystals 12, no. 2 (January 24, 2022): 162. http://dx.doi.org/10.3390/cryst12020162.

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To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this report, AlN and Al1−xInxN layers were first sputtered and characterized concerning their optical, structural and morphological properties. Ellipsometry measurements were used to determine the optical constants (refractive index, n and coefficient of extinction, k, in dependence of the wavelengths of the layers. The indium content of the Al1−xInxN film was investigated by X-ray photoelectron spectroscopy analysis. Subsequently, AlN/Al1−xInxN DBRs with high reflectivity spectra operating in the UV A, B and C were designed and fabricated on Si (111) and SiO2 substrates by radio frequency (RF) magnetron sputtering. The DBRs consist of an eight-pair AlN/Al0.84In0.16N at 235 nm, 290 nm and 365 nm with reflectances of 86.5%, 97.7% and 97.5% with FWHM of 45 nm, 70 nm and 96 nm, respectively. Atomic force microscopy analysis yielded a Root Mean Square (RMS) of 2.95 nm, implying that the DBR samples can achieve reasonable smoothness over a wide area. Furthermore, the impact of an annealing phase, which is frequently required during device growth, was investigated. Our findings indicate that AlN and Al1−xInxN are suitable materials for the fabrication of deep UV DBRs.

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5

Hefni, Hassan H. H., Mohammed Nagy, Mohammed M. Azab, and Mohammed H. M. Hussein. "Esterification of chitosan with L-alanine and a study on their effect in removing the heavy metals and total organic carbon (TOC) from wastewater." Pure and Applied Chemistry 88, no. 6 (June 1, 2016): 595–604. http://dx.doi.org/10.1515/pac-2016-0301.

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AbstractIn this work, chitosan was modified by the esterification with L-alanine in the presence of H2SO4 as a catalyst to increase the number of amino groups with the aim of increasing the adsorption efficiency. Chitosan (CS) and chitosan-O-alanine (CS-Aln) were characterized and investigated by elemental analysis, Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results obtained from elemental analysis and IR indicated the presence of sulfuric acid after neutralization as a crosslinker between CS-Aln chains. Also CS-Aln is more amorphous than CS due to the ionic bonds of crosslinker. The removal of three heavy metals (Mn2+, Pb2+ and Al3+) and total organic carbon (TOC) from wastewater by CS and CS-Aln in the batch mode has been studied at different adsorbent dosages, temperatures and contact times. The maximum metal ions removal efficiency using CS achieved 99.6%, 99.1% and 98.9%, respectively, while by using CS-Aln 95.3%, 99.3% and 98.9% were achieved. However, the maximum adsorption capacity of TOC by CS achieved 50 mg/g and 89 mg/g by CS-Aln. The total maximum adsorption capacity of CS-Aln is higher than CS.

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6

Yu, Y. D., I. L. Tangen, M. A. Einarsrud, R. Høier, T. Grande, and J. K. Solberg. "Microstructures in Pressureless Sintered AIN-SiC Ceramics." Microscopy and Microanalysis 7, S2 (August 2001): 1124–25. http://dx.doi.org/10.1017/s143192760003169x.

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Aluminum nitride (AlN) is known to have a high thermal conductivity and is one of the valid candidates as substrate material for integrated circuits. The material also has a potential in metal production and handling. However, AlN has only a moderate flexural strength and fracture toughness. It has been reported that SiCA1N composites (SiC/AIN ratio ≥ 50%) can be manufactured by means of pressureless sintering. Furthermore, it is possible to fabricate self-reinforced SiC-based materials with whisker-like crystals in composite ceramics by choosing appropriate sintering additive and condition. in the present study, we investigated the possibility to prepare in-situ formed SiC-whisker reinforced AlN-materials and studied the microstructure of the composite.An AlN-SiC composite ceramic sample (20 vol% SiC) was prepared for the investigation. The AlN-SiC composite was processed from a mixture of the starting powders with 2.5 wt% Al2O3-Y2O3 as a sintering additive.

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7

Yang, Jing, Miao Miao Cao, Yu Dong Li, and Yi Gang Chen. "Structure and Optical Properties of Al_1−xSc_xN Thin Films." Key Engineering Materials 537 (January 2013): 140–43. http://dx.doi.org/10.4028/www.scientific.net/kem.537.140.

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In this study, c-axis oriented AlN and Al1−xScxN films have been successfully grown on Si (100) and quartz glass by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the Al1−xScxN films is (002) orientation. The grain size and band gap energy (Eg) of the Al1−xScxN films decrease as the Sc concentration increases. The frequency of the E2 (high) mode observed in the Al1−xScxN films shows higher red shift compared to that observed in AlN film and the peak shifts to the low wave number with the increasing of Sc concentration.

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8

Aguado, Andrés, and José M. López. "Structures and stabilities of Aln+, Aln, and Aln− (n=13–34) clusters." Journal of Chemical Physics 130, no. 6 (February 14, 2009): 064704. http://dx.doi.org/10.1063/1.3075834.

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9

Lišková-Jakubisová, E., Š. Višňovský, P. Široký, D. Hrabovský, J. Pištora, I. Harward, and Z. Celinski. "AlN/Fe/AlN nanostructures for magnetooptic magnetometry." Journal of Applied Physics 115, no. 17 (May 7, 2014): 17A937. http://dx.doi.org/10.1063/1.4868490.

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10

Yuuki, Kazuo, Yuuki Sato, and Shinzo Yoshikado. "Fabrication of Nanoporous Titanium Dioxide Films Using Aerosol Deposition." Key Engineering Materials 582 (September 2013): 141–44. http://dx.doi.org/10.4028/www.scientific.net/kem.582.141.

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Fabrication of nanoporous titanium dioxide (TiO2) films was examined for their application as the negative electrode of a dye-sensitized solar cell (DSC). Composite films were fabricated by aerosol deposition using a powder mixture of TiO2and aluminum nitride (AlN). A nanoporous structure was subsequently formed in the film by dissolving the AIN in hot water. Remarkable differences in the surface morphology of the films were observed for different mixing ratios of TiO2and AlN particles. AlN particles remained in the films, but not at the surface. The power conversion efficiency of a DSC was improved by incorporating these nanoporous TiO2films.

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11

Ohba, Yasuo, and Ako Hatano. "Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate." Japanese Journal of Applied Physics 35, Part 2, No. 8B (August 15, 1996): L1013—L1015. http://dx.doi.org/10.1143/jjap.35.l1013.

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12

Shen, Shu Bin, Jing Long Bu, Li Xue Yu, Jun Xing Chen, and Zhi Fa Wang. "The Influence of Al₂O₃-AlN Compound Additive on the Crystallization Characteristics and Properties of Fused Quartz Ceramic Materials." Advanced Materials Research 535-537 (June 2012): 824–27. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.824.

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Fused quartz granule (d50=10μm) was used as raw material, and Al2O3-AlN (1:1, in mass) was used as additive with dosages of 1 wt%, 2 wt% and 3 wt%. The crystallization characteristics of fused quartz ceramic fabricated in reduction atmosphere at 1300°C, 1350°C and 1400°C for 1h has been investigated by thermal expansion ratio and XRD. The results showed that the crystallization characteristics were markedly improved by 1 wt% AI2O3-AIN compound additive. 1 wt% Al2O3-AIN had obvious effect on inhibiting crystallization of the samples sintered at various temperatures. The apparent porosity, bending strength and SEM of the samples were also examined. The results showed that the samples with 1 wt% AI2O3-AIN had the lowest apparent porosity among the samples containing Al2O3-AlN, the highest bending strength, and the sample AA1 sintered at 1350°C had more compact microstructure, which indicated that 1 wt% Al2O3-AlN was conducive to sintering of fused quartz ceramic materials. It can be deduced that the 1 wt% Al2O3-AIN compound additive plays the excellent role on inhibiting crystallization and promoting sintering of fused quartz ceramic materials.

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13

Suda, Jun, and Masahiro Horita. "Polytype Replication in Heteroepitaxial Growth of Nonpolar AlN on SiC." MRS Bulletin 34, no. 5 (May 2009): 348–52. http://dx.doi.org/10.1557/mrs2009.98.

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AbstractZinc-blende and wurtzite are the most common structures for binary compound semiconductors. Aluminum nitrides (AIN), one of the most promising materials for deep ultraviolet light-emitting diodes, have a wurtzite structure as an equilibrium phase due to its strong ionicity. Silicon carbide (SiC) is widely used as a substrate for heteroepitaxial growth of AlN, since SiC has a hexagonal structure whose lattice constant is close to that of AIN. Different from other compound semiconductors, SiC can have many different crystalline structures, called polytypism. Among various polytypes of SiC, large-size high-quality wafers are available for 4H and 6H structures. When AlN is grown on a 4H- or 6H-SiC basal plane (0001), normal, wurtzite-structured AIN is obtained. On the other hand, when AlN is grown on a nonbasal SiC plane, such as nonpolar (1100) or (1120), what is expected? If ideal growth is realized, AIN will follow the crystalline structure of SiC (i.e., the polytype of the SiC substrate will be replicated to the AIN epitaxial layer). Nonpolar nitride growth has attracted much attention to eliminate undesirable internal electric fields due to the polarization in nitride heterostructures. In addition, nonpolar nitride growth on SiC also allows an opportunity to obtain nitrides with new crystalline structures. In this article, the polytype replication growth of AIN on nonpolar SiC substrates is reviewed.

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14

Devuni, D., and G. Y. Wu. "ALN-RSV01." Drugs of the Future 34, no. 10 (2009): 781. http://dx.doi.org/10.1358/dof.2009.034.10.1433399.

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15

Duan, Junhong, Shaoguang Yang, Hongwei Liu, Jiangfeng Gong, Hongbo Huang, Xiaoning Zhao, Jili Tang, Rong Zhang, and Youwei Du. "AlN nanorings." Journal of Crystal Growth 283, no. 3-4 (October 2005): 291–96. http://dx.doi.org/10.1016/j.jcrysgro.2005.06.015.

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Devuni, D., and G. Y. Wu. "ALN-RSV01." Drugs of the Future 34, no. 10 (2009): 781. http://dx.doi.org/10.1358/dof.2009.34.10.1433399.

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17

Bao, S., K. H. Lee, G. Y. Chong, E. A. Fitzgerald, and C. S. Tan. "AlN-AlN Layer Bonding and Its Thermal Characteristics." ECS Journal of Solid State Science and Technology 4, no. 7 (2015): P200—P205. http://dx.doi.org/10.1149/2.0121507jss.

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18

Bao, S., K. H. Lee, G. Y. Chong, E. A. Fitzgerald, and C. S. Tan. "AlN-AlN Wafer Bonding and Its Thermal Characteristics." ECS Transactions 64, no. 5 (August 14, 2014): 141–48. http://dx.doi.org/10.1149/06405.0141ecst.

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19

Tian, Qiang, and Anil V. Virkar. "Interdiffusion in SiC-AlN and AlN-Al2OC Systems." Journal of the American Ceramic Society 79, no. 8 (August 1996): 2168–74. http://dx.doi.org/10.1111/j.1151-2916.1996.tb08952.x.

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20

Chawla, Vipin, David Holec, and Paul H. Mayrhofer. "Stabilization criteria for cubic AlN in TiN/AlN and CrN/AlN bi-layer systems." Journal of Physics D: Applied Physics 46, no. 4 (December 17, 2012): 045305. http://dx.doi.org/10.1088/0022-3727/46/4/045305.

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21

Singhal, Jashan, Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, and Debdeep Jena. "Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures." APL Materials 10, no. 11 (November 1, 2022): 111120. http://dx.doi.org/10.1063/5.0121195.

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Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has garnered much attention recently as a promising channel material for next-generation high electron mobility transistors (HEMTs). A comprehensive experimental study of the effects of Al composition x on the transport and structural properties is lacking. We report the charge control and transport properties of polarization-induced 2D electron gases (2DEGs) in strained AlGaN quantum well channels in molecular-beam-epitaxy-grown AlN/Al xGa1− xN/AlN double heterostructures by systematically varying the Al content from x = 0 (GaN) to x = 0.74, spanning energy bandgaps of the conducting HEMT channels from 3.49 to 4.9 eV measured by photoluminescence. This results in a tunable 2DEG density from 0 to 3.7 × 1013 cm2. The room temperature mobilities of x ≥ 0.25 AlGaN channel HEMTs were limited by alloy disorder scattering to below 50 cm2/(V.s) for these 2DEG densities, leaving ample room for further heterostructure design improvements to boost mobilities. A characteristic alloy fluctuation energy of [Formula: see text] eV for electron scattering in AlGaN alloy is estimated based on the temperature dependent electron transport experiments.

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Kao, Wei-Chung, Wei-Hao Lee, Sheng-Han Yi, Tsung-Han Shen, Hsin-Chih Lin, and Miin-Jang Chen. "AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing." RSC Advances 9, no. 22 (2019): 12226–31. http://dx.doi.org/10.1039/c9ra00008a.

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23

Zhao, Hu, Lei, Wan, Gong, and Zhou. "Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes." Nanomaterials 9, no. 11 (November 17, 2019): 1634. http://dx.doi.org/10.3390/nano9111634.

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High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.

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24

Li, Yang, Chen Kui, Hui Ren Peng, Ming Jia Zhu, Ya Wen Pan, and Jing Sheng Liang. "Study on the ALN Thin Film for Improving the Performance of Heat Dissipation on High Power LED Substrate." Advanced Materials Research 834-836 (October 2013): 613–16. http://dx.doi.org/10.4028/www.scientific.net/amr.834-836.613.

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This dissertation employs the method of direct current (DC) magnetron sputtering on the reverse side of the high power LED aluminum substrate to deposit the AlN thin film. And then, we paste the high power LED beads to the front of the substrate, testing and studying the heat dissipation influences of the AlN thin film on the high-power LED beads. In order to compare easily, some parts of the reverse of aluminum substrate should be overlaid thermally conductive silicone. The result indicates that depositing the AIN thin film or the overlay thermally conductive silicone on the back side of the aluminum substrate can improve the heat dissipation capability of high power LED, the AIN thin film especially.

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25

Firek, Piotr, and Bartłomiej Stonio. "Influence of AlN etching process on MISFET structures." Microelectronics International 36, no. 3 (July 1, 2019): 109–13. http://dx.doi.org/10.1108/mi-12-2018-0081.

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Purpose The purpose of this paper is to present the influence of gate dielectric etching on obtained MISFET (metal insulator semiconductor field effect transistor) structures. Because of its properties, aluminum nitride (AlN) layers can be successfully used in a large area of applications. In addition, AIN has a wide bandgap (6.2eV) and high thermal conductivity (3.2 W/cm * K). Its melting temperature is greater than 2,000°C. The relative permittivity is about 9. All these features (especially high power, high temperature and high-frequency) make AlN a useful material in the fields of electronic, optical and acoustic applications. Design/methodology/approach To fabricate n-channel transistors, silicon technology was used. The 50-nm thick AlN films were deposited using the magnetron sputtering. After preparation of SiO2/AlN stack as the gate dielectric, the optimization processes of dry etching in plasma environment by Taguchi method were realized. In the next step, three methods of AlN etching were selected and used to MISFET device fabrication. Atomic force microscopy and scanning electron microscopy allowed to surfacing of the state observation after etching process. The current–voltage (I–V) output and transfer characteristics of structures with modified etch technology were measured. Keithley SMU 236/237/238 measurement set was used. Findings In this research work, a method of AlN etching in a field effect transistor technology was developed and improved. Current−voltage characteristics of obtained MISFET structures were measured and compared. Influence of etching procedure on transistors properties was examined. Originality/value The obtained results allow improving the MISFET technology based on AlN film as a gate dielectric. The complete research work will allow using the developed technologies to implement in highly sensitive ion-sensitive field effect transistor (ISFET) structures in the future. The improvement of the etching element in the technology strongly influences the detection capabilities and operating range of the transistor.

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Kaneko, Kensei, and Yasushi Fukuzawa. "Characteristics of Micro EDM for Insulating Aluminum Nitride Ceramics." Advanced Materials Research 579 (October 2012): 86–91. http://dx.doi.org/10.4028/www.scientific.net/amr.579.86.

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Aluminum Nitride (AlN) ceramic materials have high thermal conductivity and electrical insulation, prompting consideration of their use as a semiconducting material. Although AlN should be machined with a high accuracy of form and dimension to achieve products and components with requisite precision, mechanical and other machining methods such as the laser method cannot be used because of the brittleness and high thermal conductivity of AIN. Recently, we have succeeded in machining many insulating ceramics by sinking (SEDM) and Wire-Electrical Discharge Machining (WEDM) with the assisting electrode method. We have already machined many insulating ceramic materials such as Si3N4, ZrO2 and Al2O3. However, inferior machining characteristics were obtained with AlN than with other materials. In this study, the effects of several electrical discharge conditions were examined to obtain better machining properties, such as high material removal rate and a low electrode wear ratio. It was found that machining time decreased with an increase in capacitance, while the electrode wear ratio increased. The electrode wear ratio of the W electrode was low, suggesting that it is suited for accurate machining of AlN. Additionally, the electrically conductive layer was analyzed using Energy Dispersive X-ray Spectrometry (EDS) and X-ray Diffraction (XRD). As a result, the architectural component of the EDMed AlN surface is considered mostly Al that is resolution of the workpiece. Therefore, in the EDM of AlN using the assisting electrode method, machinability using deionized water may be superior to dielectric oil. To investigate the effect of the dielectric working fluid, AlN was machined using deionized water and dielectric oil. In the case of machining with deionized water, the removal rate was faster and electrode wear ratio was lower, compared to dielectric oil.

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Hung, D. S., Y. D. Yao, D. H. Wei, K. T. Wu, J. C. Hsu, T. Ding, and Y. C. Chen. "Permittivity study of multiferroic AlN∕NiFe∕AlN multilayer films." Journal of Applied Physics 103, no. 7 (April 2008): 07E318. http://dx.doi.org/10.1063/1.2839345.

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Madan, A., I. W. Kim, S. C. Cheng, P. Yashar, V. P. Dravid, and S. A. Barnett. "Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices." Physical Review Letters 78, no. 9 (March 3, 1997): 1743–46. http://dx.doi.org/10.1103/physrevlett.78.1743.

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29

Placidi, M., A. Pérez-Tomás, J. C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi, and J. Millán. "Interfacial properties of AlN and oxidized AlN on Si." Surface Science 604, no. 1 (January 2010): 63–67. http://dx.doi.org/10.1016/j.susc.2009.10.022.

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Hung, D. S., Y. D. Yao, K. T. Wu, J. C. Hsu, Y. C. Chen, and Y. Ding. "Permittivity modulation study of multiferroic AlN/NiFe/AlN films." physica status solidi (c) 4, no. 12 (December 2007): 4467–70. http://dx.doi.org/10.1002/pssc.200777182.

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31

Huang, Haichao, Dongyan Zhao, Yanning Chen, Zhen Fu, Shuaipeng Wang, and Fang Liu. "Study on high thermal conductivity insulation materials for wide temperature range applications." Journal of Physics: Conference Series 2342, no. 1 (September 1, 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2342/1/012008.

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Abstract A new design method of highly reliable thermally conductive packaging material is proposed for the heat dissipation problem of high-density packaging of chips. The high reliability is obtained by high temperature condensation of AlN particles suspension of PAA. Focusing on the influence law of the content of AIN on the electronic packaging material, the experimental results show that the thermal conductivity reaches 3.8 W/(m⋅K) when the mass percentage of AIN reach more than 60%. The Td in N2 is 524°C. The surface of AIN is modified by the macromolecular coupling agent GBM to increase the compatibility of AIN with the Polymeric materials. The tensile strength of PI/AlN composite is 170 MPa, and the material has good insulation performance when the temperature rises to 200°C under 120 kV/mm electric field, which meets the application requirements of high-density chip packaging.

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Yu, Yingda, Inger-Lise Tangen, Tor Grande, Ragnvald Høier, and Mari-Ann Einarsrud. "HRTEM Investigations of New AlN Polytypoids in the High-AlN Region of the AlN-Al2O3-Y2O3System." Journal of the American Ceramic Society 87, no. 2 (February 2004): 275–78. http://dx.doi.org/10.1111/j.1551-2916.2004.00275.x.

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33

Clouthier, Christopher M., Friedrich Grein, and Pablo J. Bruna. "MRCI studies on the electronic structure of AlN and AlN−, and the electron affinity of AlN." Journal of Molecular Spectroscopy 219, no. 1 (May 2003): 58–64. http://dx.doi.org/10.1016/s0022-2852(03)00010-9.

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Wang, Guangzhao, Suihu Dang, Peng Zhang, Shuyuan Xiao, Cuihong Wang, and Mingmin Zhong. "Hybrid density functional study on the photocatalytic properties of AlN/MoSe2, AlN/WS2, and AlN/WSe2heterostructures." Journal of Physics D: Applied Physics 51, no. 2 (December 20, 2017): 025109. http://dx.doi.org/10.1088/1361-6463/aa9df9.

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Liu, Chun Ling, Xue Yi Hou, and Yan Ping Yao. "The Principle Experiment of AlN Used as a Non-Absorbing Window Material of LDs." Advanced Materials Research 510 (April 2012): 446–50. http://dx.doi.org/10.4028/www.scientific.net/amr.510.446.

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In order to reduce the catastrophic optical damage ( COD ) in the cavity surface of the traditional GaAs-LDs, this paper proposed the use of AlN film prepared as a non-absorbing window near the cavity surface of GaAs-LDs. In order to validate its feasibility, first of all, we prepared AIN film with different thickness on GaAs chips by reactive magnetron sputtering technology, and then, the PL spectroscopy of AlN / GaAs surface was acquired, the residual stress of the structure was calculated in accordance with the wavelength drift of GaAs intrinsic peak with the change in testing temperature.The experimental results show that the compression stress on GaAs chip is obvious when the thickness of AlN film is above 0.8 um. After the GaAs chip is subjected to compressive stress, the band gap will be widened,so the Eg of the active region near window area of GaAs-LDs will be wider than one of the active region inner the cavity, so that when the photons pass through this area, the absorption will be reduced, thereby forming non-absorbing window,therefore, the experimental validated that the AlN film used as the non-absorbing window of GaAs-LDs is feasibility.

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Chen, Xian Tao, Jing Long Bu, Rong Lin Wang, and Jun Xing Chen. "Preparation of AlN-ZrO₂(Ca) Composites by Hot Pressed Sintering." Advanced Materials Research 399-401 (November 2011): 347–50. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.347.

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AlN-ZrO2composites were prepared by hot pressed sintering with AlN particle (d≈2mm, d≈1.5mm and d≈1mm) and ZrO2powder as material. Its phase composition, thermal conductivity and sintering performance were investigated by XRD, SEM, EDS and performance testing. The results showed that AlN could be reserved in samples, and the thermal conductivity and the apparent porosity of the samples ascended with increase of the content of AlN, and the bending strength of the samples with same AlN particle occurred change according to V-shape with content of AlN increasing. Thereinto, the thermal conductivity of the samples with 1.5mm AlN was most excellent, amang samples with AlN particle of 2mm, 1.5mm and 1mm, and sintering performance of the samples with 1mm AlN was best. Particle interface of AlN and ZrO2was high concentration area of elements Ca and O, and was a structural loose crack area with CaAl12O19formed. The area is abominable for performances of AlN-ZrO2composites such as thermal conductivity, density and strength. It is more appropriate for preparation of AlN-ZrO2composites with AlN particle of 1.5mm and 1mm as materials.

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Gu, Z., J. H. Edgar, Balaji Raghothamachar, Michael Dudley, Dejin Zhuang, and Zlatko Sitar. "The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates." Materials Science Forum 527-529 (October 2006): 1497–500. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1497.

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The benefits of depositing AlN-SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were determined. The presence of the AlN-SiC alloy layer helped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. It enabled a higher growth temperature, and hence a higher growth rate. In addition, cracks in the final AlN crystals can be decreased because of the intermediate lattice constants and thermal expansion coefficient of AlN-SiC alloy. AlN-SiC alloys were first grown on off-axis SiC substrates by the sublimation-recondensation method. Then pure AlN crystals were grown upon those. For comparison, AlN crystals were directly grown on SiC substrates under similar conditions. X-ray diffraction (XRD) confirmed the formation of a pure single crystalline AlN layer upon the AlN-SiC alloy on SiC substrate. The presence of an AlN-SiC transition layer effectively inhibited the appearance of cracks in the resultant AlN crystals. X-ray topography (XRT) demonstrated that the thick AlN layer effectively released the strain present.

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Gu, Z., J. H. Edgar, B. Raghothamachar, M. Dudley, D. Zhuang, Z. Sitar, and D. W. Coffey. "Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer." Journal of Materials Research 22, no. 3 (March 2007): 675–80. http://dx.doi.org/10.1557/jmr.2007.0077.

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The advantages of depositing AlN–SiC alloy transition layers on SiC substrates before the seeded growth of bulk AlN crystals were examined. The presence of AlN–SiC alloy layers helped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. In addition, cracks in the final AlN crystals decreased from ∼5 × 106/mm2 for those grown directly on SiC substrates to less than 1 × 106/mm2 for those grown on AlN–SiC alloy layers because of the intermediate lattice constants and thermal expansion coefficient of AlN–SiC. X-ray diffraction confirmed the formation of pure single-crystalline AlN upon both AlN–SiC alloys and SiC substrates. X-ray topography (XRT) demonstrated that strains present in the AlN crystals decreased as the AlN grew thicker. However, the XRT for AlN crystals grown directly on SiC substrates was significantly distorted with a high overall defect density compared to those grown on AlN–SiC alloys.

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39

Pan, Yu Bai, Xiao Mei Shi, Xing Wei Sun, Jing Kun Guo, and Guillaume Wang. "The Effect of AlN Contents on the Properties of SiC-AlN Particulate Composites." Key Engineering Materials 313 (July 2006): 91–96. http://dx.doi.org/10.4028/www.scientific.net/kem.313.91.

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SiC matrix composites can be reinforced and toughened by the second phase of AlN particles. SiC-AlN composites are mixed by ball milling of the SiC and AlN powders, and then hot pressed under 40 MPa at 1950oC in Ar atmosphere. The object of this paper is to understand the effect of AlN contents on the properties of SiC-AlN particulate composites. AlN content is between 5 and 40wt%. For improving to mechanical properties of siC-AlN composites, the composition range of SiC-AlN composites are between 90SiC-10AlN and 80SiC-AlN20(wt%). Less or more than this ratio would result in a microstructure with much pores or AlN grain-growth, respectively, two phenomena would decrease in the mechanical properties of SiC-AlN composites.

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Kobayashi, Ryota, Junichi Tatami, Toru Wakihara, Takeshi Meguro, and Katsutoshi Komeya. "Electrical Properties of AlN-SiC Ceramics." Key Engineering Materials 317-318 (August 2006): 641–44. http://dx.doi.org/10.4028/www.scientific.net/kem.317-318.641.

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AlN-SiC ceramics with 0 to 75 mol% of AlN were fabricated through pressureless sintering of very fine AlN and SiC. Powder compacts with different amounts of AlN were fired at 2000°C for 1 h in Argon gas flow using an induction-heating furnace. The microstructure and phases present in the products were evaluated using SEM and XRD. The AlN-SiC ceramics had a porous structure with 30% porosity, and the grain size was increased with the addition of AlN. XRD analysis showed that 2H was a main phase in all samples, though 3C and 6H phases were found in 25 mol%AlN-75 mol%SiC ceramic. The electrical properties of the AlN-SiC ceramics were evaluated at various temperatures ranging from room temperature to 300°C. The electrical conductivity of the AlN-SiC ceramics depended on the amount of AlN and on the temperature. The 75 mol%AlN-SiC ceramic had higher electrical resistance, though the other samples were electrical conductors. The highest electrical conductivity was obtained with the 25 mol% AlN composition, which was 7 S/m at room temperature and 30 S/m at 300°C. The Seebeck coefficient for the AlN-SiC ceramics increased with rising temperatures. The AlN-SiC ceramics with 50 mol%AlN had the highest Seebeck coefficient of 220 2V/K at 300°C.

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Полетаев, Н. К., and А. П. Скворцов. "Спектры оптического поглощения и схема уровней энергии ионов Er-=SUP=-3+-=/SUP=- в объемных кристаллах нитрида алюминия." Физика твердого тела 59, no. 12 (2017): 2387. http://dx.doi.org/10.21883/ftt.2017.12.45236.175.

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Исследованы спектры поглощения ионов Er3+, внедренных в матрицу AlN. Примесь эрбия вводилась в объемные кристаллы AlN диффузией. В спектральном диапазоне 370-700 nm наблюдались линии поглощения, связанные с внутриконфигурационными электронными f-f-переходами из основного 4I15/2-состояния на уровни возбужденных состояний ионов Er3+. При температуре T=2 K детально исследованы переходы на уровни состояний 4F9/2, 2H11/2, 4F7/2, 4F5/2, 2H9/2 и 4G11/2. Количество наблюдавшихся линий для указанных переходов полностью совпадает с теоретически возможным для электронных f-f-переходов в ионах Er3+, находящихся в кристаллическом поле с симметрией ниже кубической. Узость наблюдавшихся линий и их число убедительно свидетельствуют о замещении ионами эрбия преимущественно одной регулярной кристаллической позиции. Наиболее вероятным представляется внедрение Er3+ в позицию Al3+ с локальной симметрией C3v. Определены энергетические положения уровней возбужденных состояний для исследованных переходов. Построена схема уровней энергии ионов Er3+ в кристаллах AlN. DOI: 10.21883/FTT.2017.12.45236.175

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Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

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Liu, Xuefei, Zhaofu Zhang, Zijiang Luo, Bing Lv, and Zhao Ding. "Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering." Nanomaterials 9, no. 12 (November 23, 2019): 1674. http://dx.doi.org/10.3390/nano9121674.

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The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

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Takamizawa, Hideo. "Application for AlN." HYBRIDS 6, no. 2 (1990): 29–40. http://dx.doi.org/10.5104/jiep1985.6.2_29.

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Dahal, R., T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang. "AlN avalanche photodetectors." Applied Physics Letters 91, no. 24 (December 10, 2007): 243503. http://dx.doi.org/10.1063/1.2823588.

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46

Bao, Gegen, Shengyu Li, Qi Zhou, Umair Ashraf, Jingxuan Qiao, Xiaolin Li, Xiaorong Wan, and Yixiong Zheng. "Transcriptomic Analysis Provides Insights into the Differential Effects of Aluminum on Peanut (Arachis hypogaea L.)." Genes 13, no. 10 (October 10, 2022): 1830. http://dx.doi.org/10.3390/genes13101830.

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In acidic soils, high concentrations of aluminum ions (Al3+) in dissolved form reduce root growth and development of most crops. In addition, Al3+ is also a beneficial element in some plant species in low concentrations. However, the regulatory mechanism of the growth and development of peanut (Arachis hypogaea L.) treated with different concentrations of Al3+ has been rarely studied. In this study, peanut seedlings were treated with AlCl3.18H2O in Hoagland nutrient solution at four different concentrations of Al3+, i.e., 0 (pH 6.85), 1.25 (pH 4.03), 2.5 (pH 3.85), and 5 (pH 3.69) mmol/L, which are regarded as Al0, Al1, Al2, and Al3. The results showed that low concentrations of Al treatment (Al1) promoted peanut growth, while high concentrations of Al treatments (Al2 and Al3) significantly inhibited peanut growth. Compared with the control (Al0), transcriptome analysis showed that the differentially expressed genes (DEGs) of starch and sucrose metabolic pathways were significantly enriched at low concentrations, i.e., Al1 treatment, whereas the expression of AhERD6 (sugar transporter) was significantly up-regulated, and the soluble sugar content was significantly increased. The DEGs of the plant hormone signaling transduction pathway were significantly enriched at high concentrations of Al2 and Al3 treatments, whereas the expression of AhNCED1 (9-cis-epoxycarotenoid dioxygenase) was significantly up-regulated, and the content of ABA was significantly increased. Moreover, the expression of transcription factors (TFs) in peanut was affected by different concentrations of Al. Overall, low concentrations of Al1 promoted peanut growth by increasing soluble sugar content, while high concentrations of Al2 and Al3 inhibited the growth of peanut, induced AhNCED1 gene expression, and increased endogenous ABA content. For peanut, the exposure of Al at low concentrations not only derived an adaptive mechanism to cope with Al stress, but also acted as a stimulator to promote its growth and development.

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Kim, Beom Su, Feride Shkembi, and Jun Lee. "In Vitro and In Vivo Evaluation of Commercially Available Fibrin Gel as a Carrier of Alendronate for Bone Tissue Engineering." BioMed Research International 2017 (2017): 1–10. http://dx.doi.org/10.1155/2017/6434169.

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Alendronate (ALN) is a bisphosphonate drug that is widely used for the treatment of osteoporosis. Furthermore, local delivery of ALN has the potential to improve the bone regeneration. This study was designed to investigate an ALN-containing fibrin (fibrin/ALN) gel and evaluate the effect of this gel on both in vitro cellular behavior using human mesenchymal stem cells (hMSCs) and in vivo bone regenerative capacity. Fibrin hydrogels were fabricated using various ALN concentrations (10−7–10−4 M) with fibrin glue and the morphology, mechanical properties, and ALN release kinetics were characterized. Proliferation and osteogenic differentiation of and cytotoxicity in fibrin/ALN gel-embedded hMSCs were examined. In vivo bone formation was evaluated using a rabbit calvarial defect model. The fabricated fibrin/ALN gel was transparent with Young’s modulus of ~13 kPa, and these properties were not affected by ALN concentration. The in vitro studies showed sustained release of ALN from the fibrin gel and revealed that hMSCs cultured in fibrin/ALN gel showed significantly increased proliferation and osteogenic differentiation. In addition, microcomputed tomography and histological analysis revealed that the newly formed bone was significantly enhanced by implantation of fibrin/ALN gel in a calvarial defect model. These results suggest that fibrin/ALN has the potential to improve bone regeneration.

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Liu, Sanjie, Yangfeng Li, Jiayou Tao, Ruifan Tang, and Xinhe Zheng. "Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD." Crystals 13, no. 6 (June 3, 2023): 910. http://dx.doi.org/10.3390/cryst13060910.

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Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The properties of AlN thin films grown on various substrates were comparatively analyzed. The investigation revealed that the as-grown AlN thin films exhibit a hexagonal wurtzite structure with preferred c-axis orientation and were polycrystalline, regardless of the substrates. The sharp AlN/substrate interfaces of the as-grown AlN are indicated by the clearly resolved Kiessig fringes measured through X-ray reflectivity. The surface morphology analysis indicated that the AlN grown on sapphire displays the largest crystal grain size and surface roughness value. Additionally, AlN/Si (100) shows the highest refractive index at a wavelength of 532 nm. Compared to AlN/sapphire, AlN/Si has a lower wavelength with an extinction coefficient of zero, indicating that AlN/Si has higher transmittance in the visible range. Overall, the study offers valuable insights into the properties of AlN thin films and their potential applications in optoelectronic devices, and provides a new technical idea for realizing high-quality AlN thin films with sharp AlN/substrate interfaces and smooth surfaces.

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Wang, Xiao-Dong, K. W. Hipps, J. T. Dickinso, and Ursula Mazur. "Amorphous or nanocrystalline AlN thin films formed from AlN: H." Journal of Materials Research 9, no. 6 (June 1994): 1449–55. http://dx.doi.org/10.1557/jmr.1994.1449.

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This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

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Legrani, Ouarda, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, and Denis Mangin. "AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 63, no. 6 (June 2016): 898–906. http://dx.doi.org/10.1109/tuffc.2016.2547188.

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Journal articles on the topic 'AlN'

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