Journal articles: 'AlN/Si (111)'

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Бессолов, В. Н., Е. В. Коненкова, T. А. Орлова, and С. Н. Родин. "Начальные стадии роста полуполярного AlN на наноструктурированной Si(100) подложке." Физика и техника полупроводников 55, no. 10 (2021): 908. http://dx.doi.org/10.21883/ftp.2021.10.51442.41.

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Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярных AlN(1011) и AlN(1012) слоев при эпитаксии из металлоорганических соединений на подложке Si(100), на поверхности которой сформирована V-образная наноструктура с размером элементов <100 нм (подложка-NP-Si(100)). Показано, что на начальной стадии эпитаксии на подложке-NP-Si(100) происходит формирование зародышевых кристаллов AlN, а затем в зависимости от кристаллографической ориентации V-стенок формируются кристаллы, ограненные плоскостями AlN(1011) на Si(111) или AlN(1012) на Si(111), разориентированном в направлении [110] на 7o. Ключевые слова: полуполярный нитрид алюминия, наноструктурированная подложка кремния.

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Koryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov, and Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates." Materials 15, no. 18 (September 6, 2022): 6202. http://dx.doi.org/10.3390/ma15186202.

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In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.

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Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

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Portail, Marc, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, et al. "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth." Crystals 12, no. 11 (November 10, 2022): 1605. http://dx.doi.org/10.3390/cryst12111605.

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(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.

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Riah, Badis, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag, and Mohamed Abdou Djouadi. "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer." Coatings 11, no. 9 (September 3, 2021): 1063. http://dx.doi.org/10.3390/coatings11091063.

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

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Zhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak, and Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.

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Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

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Shubina, K. Yu, D. V. Mokhov, T. N. Berezovskaya, E. V. Pirogov, A. V. Nashchekin, Sh Sh Sharofidinov, and A. M. Mizerov. "Separation of AlN layers from silicon substrates by KOH etching." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012037. http://dx.doi.org/10.1088/1742-6596/2086/1/012037.

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Abstract In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overgrowth of self-catalyzed AlN nanocolumns on Si(111) substrates and were used as templates for further HVPE growth of thick AlN layer. It was shown that described approaches can be used to obtain AlN layers with sufficiently smooth morphology. It was found that HVPE AlN inherited crystallographic polarity of the AlN layer grown by PA MBE. It was demonstrated that the etching of such AlN/Si(111) epitaxial structures results in partial separation of the AlN epilayers from the Si(111) substrate and allows to form suspended structures. Moreover, the avoidance of surface damage and backside overetching was achieved by use thin Cr film as surface protective coating and by increasing the layer thickness accordingly.

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Кукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова, and В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si." Физика твердого тела 59, no. 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.

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Обнаружен эффект изменения направления распространения дислокации несоответствия при росте слоев GaN на поверхности структуры AlN/SiC/Si(111). Эффект заключается в том, что при достижении слоем GaN, растущим на AlN/SiC/Si(111) определенной толщины ~300 nm, дислокации несоответствия первоначально, распространяющиеся вдоль оси роста слоя останавливаются и начинают двигаться в перпендикулярном к оси роста направлению. Построена теоретическая модель зарождения AlN и GaN на грани (111) SiC/Si, объясняющая эффект изменения направления движения дислокации несоответствия. Обнаружен экспериментально и объяснен теоретически эффект смены механизма зарождения с островкового для AlN на SiC/Si(111) на послойный при зарождении слоя GaN на AlN/SiC/Si. Авторы благодарят за финансовую поддержку Российский научный фонд (грант N 14-12-01102). Работа выполнена при использовании оборудования Уникальной научной установки (УНУ) Физика, химия и механика кристаллов и тонких пленок" ФГУН ИПМаш РАН (г. Санкт-Петербург). DOI: 10.21883/FTT.2017.04.44266.287

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Dagher, Roy, Rami Khazaka, Stephane Vézian, Monique Teissiere, Adrien Michon, Marcin Zielinski, Thierry Chassagne, Yvon Cordier, and Marc Portail. "Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers." Materials Science Forum 821-823 (June 2015): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.1003.

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Structural investigations of Si quantum dots (QDs) grown by CVD on two different heterostructures: AlN/Si (111) and 3C-SiC/Si (100) are conducted. The Si QDs have been grown using silane as precursor, diluted in hydrogen, at fixed temperature and pressure (830°C - 800mbar). High densities of dots can be obtained (up to 1011 cm-2) with typical heights below 10nm. The kinetic of deposition lets suppose the presence of an initial wetting layer before the dots formation. Different durations are required for nucleating dots on AlN and 3C-SiC. Si QDs on AlN present a luminescence band which can be attributed to quantum confinement.

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Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (April 20, 2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interface is not sharp, containing an intermixing layer with cubic AlN. We show that the substrate, particularly the strain, plays a major role in dictating the crystal structure of AlN. The strain, estimated in the observed orientation relation, is significantly lower for cubic AlN on hexagonal GaN as compared to the hexagonal AlN on hexagonal GaN. On the Si (111) substrate, on the other hand, the strain in the observed orientation relation is 0.8% for hexagonal AlN, which is substantially lower than the strain estimated for the cubic AlN on Si(111).

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Seppänen, Heli, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, and Harri Lipsanen. "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition." Materials 12, no. 3 (January 28, 2019): 406. http://dx.doi.org/10.3390/ma12030406.

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Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

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Федотов, С. Д., А. В. Бабаев, В. Н. Стаценко, К. А. Царик, and В. К. Неволин. "ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ." NANOINDUSTRY Russia 96, no. 3s (May 15, 2020): 148–53. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.148.153.

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Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

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Rehder, Eric, M. Zhou, L. Zhang, N. R. Perkins, S. E. Babcock, and T. F. Kuech. "Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 322–26. http://dx.doi.org/10.1557/s1092578300002660.

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The surface morphology and structure of AlN deposited by metal organic vapor phase epitaxy (MOVPE) on Si (111) at growth temperatures ranging from 825 to 1175°C was investigated. Transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS) techniques were used to study the resulting film structure. Growth at high temperatures but less than ∼1100°C, resulted in a wire texture with some degree of in-plane alignment with (0001)AlN/ /(111)Si, < 10 0>AlN//< 11>Si, and 110>AlN//<10>Si. Deposition at temperatures greater than 1100°C results in single crystal films consisting of domains 60 nm across with an aspect ratio near unity. Growth below1100°C leads to degraded crystal quality with the grains developing random rotational misalignments around the AlN [0001] axis. Growth at lower temperatures produces islands elongated along the [110] direction. At the growth temperature of 825°C, the aspect ratio of the islands increased to 3 and a width of 25 nm. Cross-sectional TEM reveals that these islands are faceted due to slow growth on the {1 01}planes.

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CHUAH, L. S., Z. HASSAN, and H. ABU HASSAN. "PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si(111) SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY." Surface Review and Letters 16, no. 06 (December 2009): 925–28. http://dx.doi.org/10.1142/s0218625x09013499.

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This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).

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Zhao, Yong Mei, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li, and Yi Ping Zeng. "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer." Materials Science Forum 600-603 (September 2008): 251–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.251.

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Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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WANG, HONG-HAI. "PROPERTIES AND PREPARATION OF AlN THIN FILMS BY REACTIVE LASER ABLATION WITH NITROGEN DISCHARGE." Modern Physics Letters B 14, no. 14 (June 20, 2000): 523–30. http://dx.doi.org/10.1142/s0217984900000689.

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Highly oriented AlN thin films have been deposited on (100) and (111) Si wafers by reactive laser ablation with nitrogen discharge at low substrate temperature. The composition and microstructure of films strongly depend on deposition parameters. X-ray photoelectron spectra showed that nitrogen discharge is of great importance to the composition of the films. The effect of substrate temperature on the preferred orientation of films has been investigated carefully by means of X-ray diffraction. Under optimizing deposition parameters — 1.0 J/cm 2 laser fluence, 5 Hz pulse frequency, 100 mTorr nitrogen pressure, 650 V discharge voltage and 200°C substrate temperature — the AlN films deposited on silicon substrates were smooth, dense and stoichiometric with very good preferred orientation. The orientation relationships between films and substrates were AlN(100)//Si(100) and AlN(110)//Si(111). The average refractive index was found to be 2.05 with the usage of an ellipsometer. The films had a band gap of 6.2 eV as measured by UV–visible absorption. The IR spectrum had an absorption characteristic of AlN. Examination of electric properties of films that was carried out on the metal–insulator–semiconductor structure of Au/AlN/Si showed that the dielectric constant, resistivity and breakdown field were 8.3, 2 × 1013 Ω· cm and 3 × 106 V/cm , respectively.

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Follstaedt, D. M., J. Han, P. Provencio, and J. G. Fleming. "Microstructure of GaN Grown on (111) Si by MOCVD." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 397–402. http://dx.doi.org/10.1557/s1092578300002787.

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Gallium nitride was grown on (111) Si by MOCVD by depositing an AlN buffer at 1080°C followed by GaN at 1060°C. The 2.2 μm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were nonetheless able to examine the material between cracks with TEM. The character and arrangement of dislocations are much like those of GaN grown on Al2O3: ∼2/3 pure edge and ∼1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly misoriented with respect to neighboring material. The 30 nm AlN buffer is continuous, indicating that AlN wets the Si, in contrast to GaN on Al2O3.

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Huang, Yingnan, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou, and Hui Yang. "High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth." Crystals 13, no. 3 (March 5, 2023): 454. http://dx.doi.org/10.3390/cryst13030454.

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We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. The full-width-at-half-maximum values of the X-ray-diffraction rocking curves for the AlN (0002) and (101¯2) planes were as low as 260 and 374 arcsec, respectively, corresponding to a record low dislocation density of 1.3 × 109 cm−2. Through the combination of a micro-Raman study and the X-ray diffraction analysis, it was found that narrowing the stripe width from 5 μm to 3 μm can reduce the vertical growth thickness before coalescence, resulting in a large decrease in the internal tensile stress and tilt angle, and, therefore, better suppression in the cracks and dislocations of the ELO–AlN. This work paves the way for the fabrication of high-performance Al(Ga)N-based thin-film devices such as ultraviolet light-emitting diodes and AlN bulk acoustic resonators grown on Si.

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Yang, J., X. Q. Jiao, R. Zhang, H. Zhong, Y. Shi, and B. Du. "Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition." Advanced Materials Research 718-720 (July 2013): 20–24. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.20.

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In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

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Liu, R., F. A. Ponce, A. Dadgar, and A. Krost. "Atomic arrangement at the AlN/Si (111) interface." Applied Physics Letters 83, no. 5 (August 4, 2003): 860–62. http://dx.doi.org/10.1063/1.1597749.

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Placidi, M., J. C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, and C. Serre. "Highly sensitive strained AlN on Si(111) resonators." Sensors and Actuators A: Physical 150, no. 1 (March 2009): 64–68. http://dx.doi.org/10.1016/j.sna.2008.12.005.

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Ouisse, Thierry, H. P. D. Schenk, S. Karmann, and Ute Kaiser. "Electrical Characterization of the AlN/Si(111) System." Materials Science Forum 264-268 (February 1998): 1389–92. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1389.

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Dai, Yiquan, Shuiming Li, Qian Sun, Qing Peng, Chengqun Gui, Yu Zhou, and Sheng Liu. "Properties of AlN film grown on Si (111)." Journal of Crystal Growth 435 (February 2016): 76–83. http://dx.doi.org/10.1016/j.jcrysgro.2015.11.016.

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CHUAH, L. S., Z. HASSAN, and H. ABU HASSAN. "INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)." Surface Review and Letters 16, no. 01 (February 2009): 99–103. http://dx.doi.org/10.1142/s0218625x09012354.

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High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. Best AlN films were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

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Tiwari, Ashutosh, M. Park, C. Jin, H. Wang, D. Kumar, and J. Narayan. "Epitaxial growth of ZnO films on Si(111)." Journal of Materials Research 17, no. 10 (October 2002): 2480–83. http://dx.doi.org/10.1557/jmr.2002.0361.

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In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.

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Li, Yuan, Wenliang Wang, Xiaochan Li, Liegen Huang, Yulin Zheng, Xiwu Chen, and Guoqiang Li. "Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate." CrystEngComm 20, no. 11 (2018): 1483–90. http://dx.doi.org/10.1039/c7ce02126g.

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Yamabe, N., H. Shimomura, T. Shimamura, and T. Ohachi. "Nitridation of Si(111) for growth of 2H-AlN(0001)/β-Si3N4 /Si(111) structure." Journal of Crystal Growth 311, no. 10 (May 2009): 3049–53. http://dx.doi.org/10.1016/j.jcrysgro.2009.01.076.

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28

Yang, Yibin, Lingxia Zhang, and Yu Zhao. "Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates." Crystals 10, no. 9 (September 1, 2020): 772. http://dx.doi.org/10.3390/cryst10090772.

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Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-based LEDs on Si (111) substrates grown via metal organic chemical vapor deposition (MOCVD). In order to obtain the highest reflectivity of the AlN/GaN DBR stop band, the growth parameters of AlN/GaN DBRs are optimized, including the growth temperature, the V/III ratio and the growth pressure. As a consequence, the interfaces of the optimal 9-pair AlN/GaN DBRs become abrupt, and the reflectivity of the DBR stop band is as high as 85.2%, near to the calculated value (92.5%). Finally, crack-free GaN-based LEDs with 5-pair AlN/GaN DBRs are grown on Si (111) substrates. The light output of the DBR-based LED is evidently enhanced by 41.8% at the injection current of 350 mA, compared with the conventional DBR-based LED without DBRs. These results pave the way for the luminous efficiency improvement of future green and red GaN-based LEDs grown on Si substrates.

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Мизеров, А. М., С. А. Кукушкин, Ш. Ш. Шарофидинов, А. В. Осипов, С. Н. Тимошнев, К. Ю. Шубина, Т. Н. Березовская, Д. В. Мохов, and А. Д. Буравлев. "Метод управления полярностью слоев GaN при эпитаксиальном синтезе GaN/AlN гетероструктур на гибридных подложках SiC/Si." Физика твердого тела 61, no. 12 (2019): 2289. http://dx.doi.org/10.21883/ftt.2019.12.48535.06ks.

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The effect of GaN polarity inversion from N- to Ga-face during the successive growth of GaN layers by plasma assisted molecular beam epitaxy and halide vapor phase epitaxy on hybrid SiC/Si(111) substrates was found. A new method of the formation of crack-free Ga-face GaN/AlN heterostructures on hybrid SiC/Si(111) substrates has been developed. In this method the two stage growth of GaN layers is used. At the first stage, the N-face GaN transition layer was grown on the SiC/Si(111) surface by plasma assisted molecular beam epitaxy. At the second stage, the AlN interlayer was first grown by halide vapor phase epitaxy on N-face GaN transition layer. After that the Ga-face GaN layer was synthesized by halide vapor phase epitaxy atop of the AlN interlayer. Also it was found that etching in a KOH solution affects only the N-face GaN transition layer and leads to its complete removal, which result in complete separation of the main Ga-face GaN layer from the SiC/Si(111) substrate. The method allows you to grow free from cracks and unstressed thick layers of GaN, and transfer them to the foreign substrates.

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30

Radtke, G., M. Couillard, G. A. Botton, D. Zhu, and C. J. Humphreys. "Structure and chemistry of the Si(111)/AlN interface." Applied Physics Letters 100, no. 1 (January 2, 2012): 011910. http://dx.doi.org/10.1063/1.3674984.

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31

King, Sean W., Robert J. Nemanich, and Robert F. Davis. "Band alignment at AlN/Si (111) and (001) interfaces." Journal of Applied Physics 118, no. 4 (July 28, 2015): 045304. http://dx.doi.org/10.1063/1.4927515.

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32

Lebedev, Vadim, Bernd Schröter, Gela Kipshidze, and Wolfgang Richter. "The polarity of AlN films grown on Si(111)." Journal of Crystal Growth 207, no. 4 (December 1999): 266–72. http://dx.doi.org/10.1016/s0022-0248(99)00375-9.

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33

Mohd Yusoff, M. Z., A. Mahyuddin, Z. Hassan, Y. Yusof, M. A. Ahmad, C. W. Chin, H. Abu Hassan, and M. J. Abdullah. "Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate." Superlattices and Microstructures 60 (August 2013): 500–507. http://dx.doi.org/10.1016/j.spmi.2013.05.034.

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34

Sánchez, A. M., F. J. Pacheco, S. I. Molina, P. Ruterana, F. Calle, T. A. Palacios, M. A. Sánchez-Garcı́a, E. Calleja, and R. Garcı́a. "AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111)." Materials Science and Engineering: B 93, no. 1-3 (May 2002): 181–84. http://dx.doi.org/10.1016/s0921-5107(02)00030-2.

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35

Бессолов, В. Н., Е. В. Гущина, Е. В. Коненкова, С. Д. Коненков, Т. В. Львова, В. Н. Пантелеев, and М. П. Щеглов. "Синтез гексагональных слоев AlN и GaN на Si(100)-подложке методом хлоридной газофазной эпитаксии." Журнал технической физики 89, no. 4 (2019): 574. http://dx.doi.org/10.21883/jtf.2019.04.47315.152-18.

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AbstractSynthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH_4)_2S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.

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36

Fan, Shu, Le Yu, Xiao Long He, Ping Han, Cai Chuan Wu, Jing Ping Dai, Xue Fei Li, et al. "Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD." Advanced Materials Research 1120-1121 (July 2015): 391–95. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.391.

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The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The proportion of 3-dimensional region increases gradually and the 2-dimensional region reduces correspondingly with the increase of growth time. The decrease of the coverage ratio of AlN grains in the 2-dimensional growth region is due to the effect of etching. AlN film with the single crystal orientation has been deposited on the optimized AlN NL.

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37

Бессолов, В. Н., Е. В. Коненкова, and В. Н. Пантелеев. "Пластическая релаксация напряженного полуполярного AlN(10(1)1) слоя, синтезированного на наноструктурированной Si(100) подложке." Журнал технической физики 90, no. 12 (2020): 2123. http://dx.doi.org/10.21883/jtf.2020.12.50130.98-20.

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Методом растровой электронной микроскопии изучалась пластическая релаксация напряженного полуполярного AlN(10(1)1) слоя, синтезированного на наноструктурированной подложке Si(100). Показано, что в полуполярном AlN-слое применение нанорельефа, состоящего из треугольных наноканавок с наклонными гранями, близкими к плоскости Si(111), может приводить к формированию трещин только в направлении, перпендикулярном канавке. Модельные представления пластической релаксации напряженного полуполярного слоя основываются на сравнении величин порогового напряжения, выше которого возникают трещины, и термомеханических напряжений, возникающих из-за различия коэффициентов термического расширения AlN/Si-структуры. Ключевые слова: полуполярный нитрид алюминия, наноструктурированная подложка кремния, релаксация напряженного слоя.

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38

ZHAO, YONGMEI, GUOSHENG SUN, XINGFANG LIU, JIAYE LI, WANSHUN ZHAO, LEI WANG, MUCHANG LUO, and JINMIN LI. "PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si (111) SUBSTRATES BY LP-MOCVD." Modern Physics Letters B 21, no. 22 (September 20, 2007): 1437–45. http://dx.doi.org/10.1142/s0217984907013791.

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Aluminum nitride ( AlN ) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AlN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AlN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 nm. The AlN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AlN growth.

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39

Liu, Sanjie, Yangfeng Li, Jiayou Tao, Ruifan Tang, and Xinhe Zheng. "Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD." Crystals 13, no. 6 (June 3, 2023): 910. http://dx.doi.org/10.3390/cryst13060910.

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Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectively. The properties of AlN thin films grown on various substrates were comparatively analyzed. The investigation revealed that the as-grown AlN thin films exhibit a hexagonal wurtzite structure with preferred c-axis orientation and were polycrystalline, regardless of the substrates. The sharp AlN/substrate interfaces of the as-grown AlN are indicated by the clearly resolved Kiessig fringes measured through X-ray reflectivity. The surface morphology analysis indicated that the AlN grown on sapphire displays the largest crystal grain size and surface roughness value. Additionally, AlN/Si (100) shows the highest refractive index at a wavelength of 532 nm. Compared to AlN/sapphire, AlN/Si has a lower wavelength with an extinction coefficient of zero, indicating that AlN/Si has higher transmittance in the visible range. Overall, the study offers valuable insights into the properties of AlN thin films and their potential applications in optoelectronic devices, and provides a new technical idea for realizing high-quality AlN thin films with sharp AlN/substrate interfaces and smooth surfaces.

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40

LIU, HONG-YU, XUE-MING MA, and WANG-ZHOU SHI. "INFLUENCE OF SUBSTRATE TEMPERATURE ON TRANSFORMATION OF PREFERRED ORIENTATIONS IN AlN FILMS." Modern Physics Letters B 19, no. 30 (December 30, 2005): 1775–82. http://dx.doi.org/10.1142/s0217984905010384.

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Polycrystalline aluminium nitride (AlN) films were deposited on silicon substrates by pulsed laser deposition (PLD) at a substrate temperature in the range room temperature (RT)-800° C . Films grown on Si (111) substrates feature (002) and (110) preferred orientations at substrate temperatures below 400°C and above 600°C, respectively. Films morphology is good enough for surface acoustic wave (SAW) devices. The mechanism for formation and transformation of different preferred orientations in AlN films is discussed.

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41

CHUAH, L. S., Z. HASSAN, and H. ABU HASSAN. "ELECTRICAL RESISTANCE OF CRACK-FREE GaN/AlN HETEROSTRUCTURE GROWN ON Si(111)." Journal of Nonlinear Optical Physics & Materials 17, no. 03 (September 2008): 299–304. http://dx.doi.org/10.1142/s021886350800424x.

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This paper presents the electrical resistance of crack-free n-GaN/AlN/n-Si(111) diodes in relation to the temperature of the Al effusion cell for the growth of AlN intermediate layer (348 nm thickness) using radio-frequency molecular beam epitaxy (RF-MBE). The thickness of the unintentionally doped n-type GaN thin film is in the range of 63–100 nm. Aluminium (300 nm thickness) was sputtered onto the n-type GaN through a metal mask, followed by the 100 nm thick titanium (Ti) capping layer to obtain an ohmic contact. The back contact was created on the back surface of the Si substrate by evaporating indium (In) followed by thermal annealing at 400°C. We will consider the above as a device on an n-type Si(111) substrate, where the electron current flows from the Si substrate to the n-type GaN top layer. It was found that the current–voltage (I–V) characteristics depend on the various deposition temperature of the Al effusion cell for the growth of the AlN intermediate layer. In the forward bias region, where the electrons flow from Si(111) to the GaN top layer, we observe a threshold voltage of approximately 0.5 V for turning on a high current. The order of differential resistance magnitude was nearly a constant in the voltage range of 1.0 to 3.0 V.

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42

Chaaben, N., J. Yahyaoui, M. Christophersen, T. Boufaden, and B. El Jani. "Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substrates." Superlattices and Microstructures 40, no. 4-6 (October 2006): 483–89. http://dx.doi.org/10.1016/j.spmi.2006.09.022.

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43

Бессолов, В. Н., Н. Д. Грузинов, М. Е. Компан, Е. В. Коненкова, В. Н. Пантелеев, С. Н. Родин, and М. П. Щеглов. "Газофазная эпитаксия слоев AlN на темплейте AlN/Si(111), синтезированном методом реактивного магнетронного распыления." Письма в журнал технической физики 46, no. 8 (2020): 29. http://dx.doi.org/10.21883/pjtf.2020.08.49305.18215.

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Epitaxial layers of AlN were grown on a Si(111) substrate using several sequential methods: reactive magnetron sputtering (up to a thickness of 20 nm), MOCVD (up to a thickness of 450 nm), and HVPE (up to a thickness of 2 microns).The formation of AlN by this combined method provides a significant reduction in layer deformation and suppression of crack formation.

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44

Cheng, Yana, and Roderic Beresford. "Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy." Applied Physics Letters 100, no. 23 (June 4, 2012): 232112. http://dx.doi.org/10.1063/1.4728119.

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45

Nikishin, Sergey A., Nikolai N. Faleev, Vladimir G. Antipov, Sebastien Francoeur, Luis Grave de Peralta, George A. Seryogin, Mark Holtz, et al. "High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 467–73. http://dx.doi.org/10.1557/s1092578300004658.

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We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130−1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition to two-dimensional (2D) growth mode of AlN. The rapid transition to the 2D growth mode of AlN is essential for the subsequent growth of high quality GaN, and complete elimination of cracking in thick ( > 2 μm) GaN layers. We show, using Raman scattering (RS) and photoluminescence (PL) measurements, that the tensile stress in the GaN is due to thermal expansion mismatch, is below the ultimate strength of breaking of GaN, and produces a sizable shift in the bandgap. We show that the GSMBE AlN and GaN layers grown on Si can be used as a substrate for subsequent deposition of thick AlN and GaN layers by hydride vapor phase epitaxy (HVPE).

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46

Davis, Robert F., T. Gehrke, K. J. Linthicum, T. S. Zheleva, P. Rajagopal, C. A. Zorman, and M. Mehregany. "Pendeo-epitaxial Growth and Characterization of GaN and related Materials on 6H-SiC(0001) and Si(111) Substrates." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 49–61. http://dx.doi.org/10.1557/s1092578300004075.

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Discrete and coalesced monocrystalline GaN and AlxGa1−xN layers grown via Pendeoepitaxy (PE) [1] originated from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6HSiC(0001) and GaN(0001)/AlN(0001)/3C-SiC(111)/Si(111) substrates. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films was reduced by at least five orders of magnitude relative to the initial GaN seed layers. Tilting in the coalesced GaN epilayers was observed via X-ray diffraction. A tilt of 0.2° was confined to areas of mask overgrowth; however, no tilting was observed in the material suspended above the SiC substrate. The strong, low-temperature PL band-edge peak at 3.45 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown on 6H-SiC(0001). The band-edge in the GaN grown on AlN(0001)/SiC(111)Si(111) substrates was shifted to a lower energy by 10 meV, indicative of a greater tensile stress.

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47

Mahyuddin, A., A. Azrina, M. Z. Mohd Yusoff, and Z. Hassan. "Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate." Modern Physics Letters B 31, no. 33 (November 27, 2017): 1750313. http://dx.doi.org/10.1142/s0217984917503134.

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An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer can significantly reduce the value of effective oxide charge density and total effective number of charges per unit area which are [Formula: see text] and [Formula: see text], respectively.

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Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, et al. "Study of interface trap states of AlN-Si(111) heterostructure." Acta Physica Sinica 53, no. 11 (2004): 3888. http://dx.doi.org/10.7498/aps.53.3888.

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Kang, H. C., and D. Y. Noh. "Interfacial structure of oxidized AlN(0002)∕Si(111) thin film." Journal of Applied Physics 98, no. 4 (August 15, 2005): 044908. http://dx.doi.org/10.1063/1.2009818.

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Litvinov, D., D. Gerthsen, R. Vöhringer, D. Z. Hu, and D. M. Schaadt. "Transmission electron microscopy investigation of AlN growth on Si(111)." Journal of Crystal Growth 338, no. 1 (January 2012): 283–90. http://dx.doi.org/10.1016/j.jcrysgro.2011.11.038.

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Journal articles on the topic 'AlN/Si (111)'

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