Relevant bibliographies by topics / AlN/Si (111) Heterojunction

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'AlN/Si (111) Heterojunction'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "AlN/Si (111) Heterojunction"

1

Pattada, B., Jiayu Chen, M. O. Manasreh, S. Guo, D. Gotthold, M. Pophristic, and B. Peres. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates." Journal of Applied Physics 93, no. 9 (May 2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.

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Шарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын, А. В. Солнышкин, О. Н. Сергеева, Е. Ю. Каптелов, and И. П. Пронин. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния." Физика твердого тела 64, no. 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.

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The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coefficients have close values of the order of γ ~ (0.7-1)•10-10 С/cm2K. It is shown that to increase the magnitude of the pyroresponse it is necessary to deposit an AlN layer with a thickness exceeding 1 μm on the AlxGa1-xN/SiC/Si surface. This leads to record values of the pyroelectric coefficient γ ~ 18•10-10 С/cm2K for AlN crystals and films
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Zainuriah, Hassan, Sha Shiong Ng, G. L. Chew, F. K. Yam, Mat Johar Abdullah, M. Roslan Hashim, Kamarulazizi Ibrahim, and M. E. Kordesch. "Growth and Properties of GaN/Si Heterojunction." Materials Science Forum 480-481 (March 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.

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Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a detailed characterization study of GaN thin film grown on Si(111) with AlN buffer layer by low pressure metalorganic chemical vapor deposition (LP-MOCVD) was carried out. Post deposition analysis includes scanning electron microscopy (SEM), x-ray diffraction (XRD), Hall and infrared (IR) spectroscopy techniques. The IR spectra were compared to the calculated spectra generated with a damped single harmonic oscillator model. Through this method, a complete set of reststrahlen parameters (such as ε∞, S, wTO, γ) of the GaN epilayer were obtained. Our results show that the GaN film has a single crystalline structure. Current-voltage characteristics (I-V) of this GaN/Si heterojunction were measured at room temperature. Rectification behavior was observed for this anisotype heterojunction. The electrical characteristics of Ni Schottky barriers on this unintentionally doped n-type film were also investigated. The barrier height of Ni/GaN Schottky barriers has been determined to be 0.93 eV by I-V measurement.
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Núñez-Cascajero, Arántzazu, Fernando B. Naranjo, María de la Mata, and Sergio I. Molina. "Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications." Materials 14, no. 9 (April 27, 2021): 2236. http://dx.doi.org/10.3390/ma14092236.

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Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.
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Sharofidinov Sh. Sh., Kukushkin S. A., Staritsyn M. V., Solnyshkin A. V., Sergeeva O. N., Kaptelov E. Yu., and Pronin I. P. "Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide." Physics of the Solid State 64, no. 5 (2022): 516. http://dx.doi.org/10.21883/pss.2022.05.53510.250.

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The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coefficients have close values of the order of γ~(0.7-1)·10-10 C/cm2K. It is shown that to increase the magnitude of the pyroresponse it is necessary to deposit an AlN layer with a thickness exceeding 1 μm on the AlxGa1-xN/SiC/Si surface. This leads to record values of the pyroelectric coefficient γ~18·10-10 C/cm2K for AlN crystals and films. Keywords: silicon carbide-on-silicon substrates, chloride-hydride epitaxy, AlGaN epitaxial layers, aluminum nitride, gallium nitride, pyroelectric properties.
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Riah, Badis, Julien Camus, Abdelhak Ayad, Mohammad Rammal, Raouia Zernadji, Nadjet Rouag, and Mohamed Abdou Djouadi. "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer." Coatings 11, no. 9 (September 3, 2021): 1063. http://dx.doi.org/10.3390/coatings11091063.

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).
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Zhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak, and Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.

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Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.
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Shubina, K. Yu, D. V. Mokhov, T. N. Berezovskaya, E. V. Pirogov, A. V. Nashchekin, Sh Sh Sharofidinov, and A. M. Mizerov. "Separation of AlN layers from silicon substrates by KOH etching." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012037. http://dx.doi.org/10.1088/1742-6596/2086/1/012037.

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Abstract In this work, the AlN/Si(111) epitaxial structures grown consistently by plasma assisted molecular beam epitaxy (PA MBE) and hydride vapour phase epitaxy (HVPE) methods were studied. The PA MBE AlN buffer layers were synthesized via coalescence overgrowth of self-catalyzed AlN nanocolumns on Si(111) substrates and were used as templates for further HVPE growth of thick AlN layer. It was shown that described approaches can be used to obtain AlN layers with sufficiently smooth morphology. It was found that HVPE AlN inherited crystallographic polarity of the AlN layer grown by PA MBE. It was demonstrated that the etching of such AlN/Si(111) epitaxial structures results in partial separation of the AlN epilayers from the Si(111) substrate and allows to form suspended structures. Moreover, the avoidance of surface damage and backside overetching was achieved by use thin Cr film as surface protective coating and by increasing the layer thickness accordingly.
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Кукушкин, С. А., А. В. Осипов, В. Н. Бессолов, Е. В. Коненкова, and В. Н. Пантелеев. "Остановка и разворот дислокаций несоответствия при росте нитрида галлия на подложках SiC/Si." Физика твердого тела 59, no. 4 (2017): 660. http://dx.doi.org/10.21883/ftt.2017.04.44266.287.

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Обнаружен эффект изменения направления распространения дислокации несоответствия при росте слоев GaN на поверхности структуры AlN/SiC/Si(111). Эффект заключается в том, что при достижении слоем GaN, растущим на AlN/SiC/Si(111) определенной толщины &#126;300 nm, дислокации несоответствия первоначально, распространяющиеся вдоль оси роста слоя останавливаются и начинают двигаться в перпендикулярном к оси роста направлению. Построена теоретическая модель зарождения AlN и GaN на грани (111) SiC/Si, объясняющая эффект изменения направления движения дислокации несоответствия. Обнаружен экспериментально и объяснен теоретически эффект смены механизма зарождения с островкового для AlN на SiC/Si(111) на послойный при зарождении слоя GaN на AlN/SiC/Si. Авторы благодарят за финансовую поддержку Российский научный фонд (грант N 14-12-01102). Работа выполнена при использовании оборудования Уникальной научной установки (УНУ) Физика, химия и механика кристаллов и тонких пленок" ФГУН ИПМаш РАН (г. Санкт-Петербург). DOI: 10.21883/FTT.2017.04.44266.287
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Isshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, and Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations." Materials Science Forum 600-603 (September 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.
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Dissertations / Theses on the topic "AlN/Si (111) Heterojunction"

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Zang, Keyan, Lianshan Wang, Soo-Jin Chua, and Carl V. Thompson. "Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)." 2003. http://hdl.handle.net/1721.1/3841.

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AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pre-treatments, AlN grows in a pseudo-2-dimensional mode because the lateral growth rate of AlN is increased, and the wetting property of the AlN on silicon is improved. Also, no amorphous SiNx layer was observed at the interface with TMA pre-treatments and AlN films with good epitaxial crystalline quality were obtained. Transmission electron diffraction patterns revealed that the AlN and Si have the crystallographic orientation relationship AlN [0001]║Si[111] and AlN[11 2 0] ║Si[110]. High resolution transmission electron microscopy indicates a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction. Based on this observation, a lattice matching model is proposed.
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Su, P. C., and 蘇柏健. "Effect of mask pattern on the c-axis texture of AlN grown on Si(111)." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/22736a.

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Pu, Jun-Liang, and 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.

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碩士
崑山科技大學
電機工程研究所
91
In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
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Chen, Chien-Hsun, and 陳建勳. "Characterizations of GaN/AlN multilayers on a mesh patterned Si(111) grown by metal-organic chemical vapor deposition." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15521410380206659047.

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博士
國立清華大學
材料科學工程學系
94
A 300 x 300 micro-meter square crack-free GaN/AlN multilayers of 2 micrometer thick has been successfully grown on the Si(111) substrate patterned with SixNy or SiO2 meshes by MOCVD. The cathodoluminescence (CL) and Raman results show that the better quality of GaN is obtained for the SixNy mesh patterned Si(111) as the substrate. And better quality of GaN is achieved for smaller mesh size. The in-plane stress exhibits a U shape distribution across the “window” region, supported by the Raman shift of the GaN E2(TO) mode. This indicates a stress relaxation abruptly occurring near the edge of the “window” region due to the free standing surface (11-bar01) or (112-bar2). The in-plane stress is almost relaxed at the corner of the “window” region due to three free standing surfaces (11-bar01), (112-bar2), and (101-bar1). The maximum in-plane stress is located near the surface of the multilayers at the center of the “window” region, supported by the Raman measurements and the failure observations. The role of the SixNy mesh in the stress relaxation is discussed. The band gap shift in the 80 x 80 micrometer square crack-free GaN/AlN multilayers on the mesh patterned Si(111) was characterized by cathodoluminescence (CL) and Raman techniques. The GaN band gap derived from CL spectra depends on the spatial point inside a mesh, which changes from 3.413 eV (at center), to 3.418 eV (at edge), and to 3.426 eV (at corner). The band gap shift is attributed to the variation of tensile stress inside the mesh, confirmed by Raman mapping. The shift of GaN band gap per unit stress is determined to be 0.03 eV/GPa. Scanning photoelectron microscopy (SPEM) was applied to extract chemical images of the GaN/AlN multilayers within the mesh. The SPEM images study of the GaN/AlN multilayers on a mesh patterned Si(111) is dependent on the local charging. The V-defect on the surface of GaN can be observed by SPEM images and is determined to be Ga terminated surface.
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Book chapters on the topic "AlN/Si (111) Heterojunction"

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Ajmal Khan, M., and Yasuaki Ishikawa. "Indium (In)-Catalyzed Silicon Nanowires (Si NWs) Grown by the Vapor–Liquid–Solid (VLS) Mode for Nanoscale Device Applications." In Nanowires - Recent Progress. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97723.

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Stacking fault free and planar defects (twin plane) free catalyzed Si nanowires (Si NWs) is essential for the carrier transport in the nanoscale devices applications. In this chapter, In-catalyzed, vertically aligned and cone-shaped Si NWs arrays were grown by using vapor–liquid–solid (VLS) mode on Si (111) substrates. We have successfully controlled the verticality and (111)-orientation of Si NWs as well as scaled down the diameter to 18 nm. The density of Si NWs was also enhanced from 2.5 μm−2 to 70 μm−2. Such vertically aligned, (111)-oriented p-type Si NWs are very important for the nanoscale device applications including Si NWs/c-Si tandem solar cells and p-Si NWs/n-InGaZnO Heterojunction LEDs. Next, the influence of substrate growth temperature (TS), cooling rate (∆TS/∆𝑡) on the formation of planar defects, twining along [112] direction and stacking fault in Si NWs perpendicular to (111)-orientation were deeply investigated. Finally, one simple model was proposed to explain the formation of stacking fault, twining of planar defects in perpendicular direction to the axial growth direction of Si NWs. When the TS was decreased from 600°C with the cooling rate of 100°C/240 sec to room temperature (RT) after Si NWs growth then the twin planar defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed.
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Conference papers on the topic "AlN/Si (111) Heterojunction"

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Hu, D. Z., R. Vöhringer, D. M. Schaadt, Jisoon Ihm, and Hyeonsik Cheong. "Epitaxial growth of AlN films on Si (111)." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666344.

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Malin, T. V., V. G. Mansurov, Yu G. Galitsyn, and K. S. Zhuravlev. "2D AlN layer formation on (111)Si surface by ammonia MBE." In 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2014. http://dx.doi.org/10.1109/3m-nano.2014.7057317.

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Imura, M., A. Tanaka, H. Iwai, J. Liu, M. Liao, and Y. Koide. "Energy-band offset of AlN/Diamond(111) heterojunction determined by X-ray photoelectron spectroscopy." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-14-9.

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Akasaka, Tetsuya, Yasuyuki Kobayashi, and Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.

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Yusoff, Mohd Zaki Mohd, Zainuriah Hassan, Azzafeerah Mahyuddin, Chin Che Woei, Anas Ahmad, Yushamdan Yusof, and Mohd Bukhari Md Yunus. "Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE." In 2011 IEEE Symposium on Business, Engineering and Industrial Applications (ISBEIA). IEEE, 2011. http://dx.doi.org/10.1109/isbeia.2011.6088879.

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Yang, Tsung Hsi, Jet-Chung Chang, Jui Tai Ku, Shih-Guo Shen, Yi-Cheng Chen, and Chun-Yen Chang. "Growth of GaN on Si (111) using simultaneous AlN/α-Si3N4 buffer structure." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.f-1-6.

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Deng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko, and Takashi Suemasu. "Investigation of p-BaSi2/n-Si heterojunction solar cells on Si(001) and comparison to those on Si(111)." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547215.

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Yusoff, Mohd Zaki Mohd, Azzafeerah Mahyuddin, Zainuriah Hassan, Haslan Abu Hassan, and Mat Johar Abdullah. "The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE." In 2ND ASEAN - APCTP WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY: (AMSN 2010). AIP, 2012. http://dx.doi.org/10.1063/1.4732500.

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Zhao, Yongmei, Guosheng Sun, Xingfang Liu, Jiaye Li, Wanshun Zhao, Lei Wang, Muchang Luo, and Jinmin Li. "Effects of V/III Ratios on the Properties of AlN Grown on Si (111) Substrate by LP-MOCVD." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306569.

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Lumbantoruan, Franky, Yuan-Yee Wong, Yue-Han Wu, Wei-Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh, and Edward Yi Chang. "Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920785.

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