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Relevant bibliographies by topics / AlN

Academic literature on the topic 'AlN'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 July 2024

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Journal articles on the topic "AlN"

1

Mazzafera, Paulo, Kátia Viviane Gonçalves, and Milton Massao Shimizu. "Control of Allantoin Accumulation in Comfrey." Natural Product Communications 3, no. 9 (September 2008): 1934578X0800300. http://dx.doi.org/10.1177/1934578x0800300905.

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Comfrey, a medicinal herb with healing properties that are attributed to allantoin, was studied in this work. The accumulation and metabolism of allantoin (ALN) and its degradation product, allantoic acid (ALA), were examined. ALN was the main ureide in leaves and roots, with young leaves showing the highest content. ALA was the predominant ureide in the xylem sap, and together with ALN represented 27% of the nitrogen (N) transported in the xylem. Amino acids were the most abundant N-compound in the xylem sap with a high proportion of glutamine. [14C]Xanthine feeding experiments showed that ALN and ALA were actively formed in leaves and roots by degradation of xanthine. Both xanthine and uric acid were rapidly degraded to form ALN and ALA. Enzyme studies showed that calculated V max /K m are low for allantoinase and alantoicase, supporting the results from the feeding experiments, and indicating that accumulation of ALN in comfrey is due to a low capacity for the enzymatic degradation of ureides.

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Seppänen, Heli, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, and Harri Lipsanen. "Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition." Materials 12, no. 3 (January 28, 2019): 406. http://dx.doi.org/10.3390/ma12030406.

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Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

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Vasilyev, V., J. Cetnar, B. Claflin, G. Grzybowski, K. Leedy, N. Limberopoulos, D. Look, and S. Tetlak. "Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications." MRS Advances 1, no. 39 (2016): 2711–16. http://dx.doi.org/10.1557/adv.2016.510.

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ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

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Frimpong-Manso, Ellen Serwaa, and Liancheng Wang. "High Reflectivity AlN/Al1−xInxN Distributed Bragg Reflectors across the UV Regions by Sputtering." Crystals 12, no. 2 (January 24, 2022): 162. http://dx.doi.org/10.3390/cryst12020162.

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To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highly reflective distributed Bragg reflectors (DBRs) are a requirement. In this report, AlN and Al1−xInxN layers were first sputtered and characterized concerning their optical, structural and morphological properties. Ellipsometry measurements were used to determine the optical constants (refractive index, n and coefficient of extinction, k, in dependence of the wavelengths of the layers. The indium content of the Al1−xInxN film was investigated by X-ray photoelectron spectroscopy analysis. Subsequently, AlN/Al1−xInxN DBRs with high reflectivity spectra operating in the UV A, B and C were designed and fabricated on Si (111) and SiO2 substrates by radio frequency (RF) magnetron sputtering. The DBRs consist of an eight-pair AlN/Al0.84In0.16N at 235 nm, 290 nm and 365 nm with reflectances of 86.5%, 97.7% and 97.5% with FWHM of 45 nm, 70 nm and 96 nm, respectively. Atomic force microscopy analysis yielded a Root Mean Square (RMS) of 2.95 nm, implying that the DBR samples can achieve reasonable smoothness over a wide area. Furthermore, the impact of an annealing phase, which is frequently required during device growth, was investigated. Our findings indicate that AlN and Al1−xInxN are suitable materials for the fabrication of deep UV DBRs.

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Hefni, Hassan H. H., Mohammed Nagy, Mohammed M. Azab, and Mohammed H. M. Hussein. "Esterification of chitosan with L-alanine and a study on their effect in removing the heavy metals and total organic carbon (TOC) from wastewater." Pure and Applied Chemistry 88, no. 6 (June 1, 2016): 595–604. http://dx.doi.org/10.1515/pac-2016-0301.

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AbstractIn this work, chitosan was modified by the esterification with L-alanine in the presence of H2SO4 as a catalyst to increase the number of amino groups with the aim of increasing the adsorption efficiency. Chitosan (CS) and chitosan-O-alanine (CS-Aln) were characterized and investigated by elemental analysis, Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD). The results obtained from elemental analysis and IR indicated the presence of sulfuric acid after neutralization as a crosslinker between CS-Aln chains. Also CS-Aln is more amorphous than CS due to the ionic bonds of crosslinker. The removal of three heavy metals (Mn2+, Pb2+ and Al3+) and total organic carbon (TOC) from wastewater by CS and CS-Aln in the batch mode has been studied at different adsorbent dosages, temperatures and contact times. The maximum metal ions removal efficiency using CS achieved 99.6%, 99.1% and 98.9%, respectively, while by using CS-Aln 95.3%, 99.3% and 98.9% were achieved. However, the maximum adsorption capacity of TOC by CS achieved 50 mg/g and 89 mg/g by CS-Aln. The total maximum adsorption capacity of CS-Aln is higher than CS.

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Yu, Y. D., I. L. Tangen, M. A. Einarsrud, R. Høier, T. Grande, and J. K. Solberg. "Microstructures in Pressureless Sintered AIN-SiC Ceramics." Microscopy and Microanalysis 7, S2 (August 2001): 1124–25. http://dx.doi.org/10.1017/s143192760003169x.

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Aluminum nitride (AlN) is known to have a high thermal conductivity and is one of the valid candidates as substrate material for integrated circuits. The material also has a potential in metal production and handling. However, AlN has only a moderate flexural strength and fracture toughness. It has been reported that SiCA1N composites (SiC/AIN ratio ≥ 50%) can be manufactured by means of pressureless sintering. Furthermore, it is possible to fabricate self-reinforced SiC-based materials with whisker-like crystals in composite ceramics by choosing appropriate sintering additive and condition. in the present study, we investigated the possibility to prepare in-situ formed SiC-whisker reinforced AlN-materials and studied the microstructure of the composite.An AlN-SiC composite ceramic sample (20 vol% SiC) was prepared for the investigation. The AlN-SiC composite was processed from a mixture of the starting powders with 2.5 wt% Al2O3-Y2O3 as a sintering additive.

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Yang, Jing, Miao Miao Cao, Yu Dong Li, and Yi Gang Chen. "Structure and Optical Properties of Al_1−xSc_xN Thin Films." Key Engineering Materials 537 (January 2013): 140–43. http://dx.doi.org/10.4028/www.scientific.net/kem.537.140.

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In this study, c-axis oriented AlN and Al1−xScxN films have been successfully grown on Si (100) and quartz glass by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the Al1−xScxN films is (002) orientation. The grain size and band gap energy (Eg) of the Al1−xScxN films decrease as the Sc concentration increases. The frequency of the E2 (high) mode observed in the Al1−xScxN films shows higher red shift compared to that observed in AlN film and the peak shifts to the low wave number with the increasing of Sc concentration.

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Aguado, Andrés, and José M. López. "Structures and stabilities of Aln+, Aln, and Aln− (n=13–34) clusters." Journal of Chemical Physics 130, no. 6 (February 14, 2009): 064704. http://dx.doi.org/10.1063/1.3075834.

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Lišková-Jakubisová, E., Š. Višňovský, P. Široký, D. Hrabovský, J. Pištora, I. Harward, and Z. Celinski. "AlN/Fe/AlN nanostructures for magnetooptic magnetometry." Journal of Applied Physics 115, no. 17 (May 7, 2014): 17A937. http://dx.doi.org/10.1063/1.4868490.

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Yuuki, Kazuo, Yuuki Sato, and Shinzo Yoshikado. "Fabrication of Nanoporous Titanium Dioxide Films Using Aerosol Deposition." Key Engineering Materials 582 (September 2013): 141–44. http://dx.doi.org/10.4028/www.scientific.net/kem.582.141.

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Fabrication of nanoporous titanium dioxide (TiO2) films was examined for their application as the negative electrode of a dye-sensitized solar cell (DSC). Composite films were fabricated by aerosol deposition using a powder mixture of TiO2and aluminum nitride (AlN). A nanoporous structure was subsequently formed in the film by dissolving the AIN in hot water. Remarkable differences in the surface morphology of the films were observed for different mixing ratios of TiO2and AlN particles. AlN particles remained in the films, but not at the surface. The power conversion efficiency of a DSC was improved by incorporating these nanoporous TiO2films.

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Dissertations / Theses on the topic "AlN"

1

Gu, Zheng. "Sublimation growth of AlN-SiC alloys, AlN and ScN bulk crystals, and thermal oxidation of AlN /." Search for this dissertation online, 2006. http://wwwlib.umi.com/cr/ksu/main.

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2

Entezarian, Majid. "Metallization of AlN." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=56793.

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Heat dissipation from silicon chips is becoming critical as a result of increasing circuit density and power applied to these chips. In this regard, aluminum nitride (AlN) is the most promising candidate to be used as a substrate since it possesses high a thermal conductivity and thermal expansion coefficient close to that of silicon. In addition, metal-ceramic interfaces determine the heat dissipation through a circuit. In order to minimize the effect of interfaces, direct bonding (DB) of AlN to Cu was studied. DB process has been reported to provide a low thermal barrier and an interface which is free of thermal fatigue.
In this work process parameters of DB were optimized based on time, temperature and thickness of the Cu-foil for Cu-Al$ sb2$O$ sb3$ system in a N$ sb2$ atmosphere containing 500 ppm O$ sb2$ in a temperature range of 1065 to 1075$ sp circ$C. These conditions were then applied to the Cu-AlN system. Wettability of AlN by Cu was studied and improved through oxidation of AlN and modification of Cu by adding 1 at.% O$ sb2$. The activation energy for oxidation of AlN was found to be 94 kJ/mol. It was then shown that direct bonding of Cu to AlN can be performed without any intermediate layer. The average peel strength of AlN-Cu, A$ sb2$O$ sb3$-Cu and AlN-Al$ sb2$O$ sb3$-Cu systems were measured to be 42, 49 and 14.7 MPa, respectively.

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3

BANAL, RYAN GANIPAN. "MOVPE Growth of AlN and AlGaN/AlN Quantum Wells and their Optical Polarization Properties." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78005.

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4

Fuentes, Iriarte Gonzalo. "AlN Thin Film Electroacoustic Devices." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://publications.uu.se/theses/91-554-5557-3/.

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5

Taking, Sanna. "AlN/GaN MOS-HEMTs technology." Thesis, University of Glasgow, 2012. http://theses.gla.ac.uk/3356/.

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The ever increasing demand for higher power devices at higher frequencies has prompted much research recently into the aluminium nitride/gallium nitride high electron mobility transistors (AlN/GaN HEMTs) in response to theoretical predictions of higher performance devices. Despite having superior material properties such as higher two-dimensional electron gas (2DEG) densities and larger breakdown field as compared to the conventional aluminium gallium nitride (AlGaN)/GaN HEMTs, the AlN/GaN devices suffer from surface sensitivity, high leakage currents and high Ohmic contact resistances. Having very thin AlN barrier layer of ∼ 3 nm makes the epilayers very sensitive to liquids coming in contact with the surface. Exposure to any chemical solutions during device processing degrades the surface properties, resulting in poor device performance. To overcome the problems, a protective layer is employed during fabrication of AlN/GaN-based devices. However, in the presence of the protective/passivation layers, formation of low Ohmic resistance source and drain contact becomes even more difficult. In this work, thermally grown aluminium oxide (Al2O3) was used as a gate di- electric and surface passivation for AlN/GaN metal-oxide-semiconductor (MOS)-HEMTs. Most importantly, the Al2O3 acts as a protection layer during device processing. The developed technique allows for a simple and effective wet etching optimisation using 16H3PO4:HNO3:2H2O solution to remove Al from the Ohmic contact regions prior to the formation of Al2O3 and Ohmic metallisation. Low Ohmic contact resistance (0.76Ω.mm) as well as low sheet resistance (318Ω/square) were obtained after optimisation. Significant reduction in the gate leakage currents was observed when employing an additional layer of thermally grown Al2O3 on the mesa sidewalls, particularly in the region where the gate metallisation overlaps with the exposed channel edge. A high peak current ∼1.5 A/mm at VGS=+3 V and a current-gain cutoff frequency, fT , and maximum oscillation frequency, fMAX , of 50 GHz and 40 GHz, respectively, were obtained for a device with 0.2 μm gate length and 100 μm gate width. The measured breakdown voltage, VBR, of a two-finger MOS-HEMT with 0.5μm gate length and 100 μm gate width was 58 V. Additionally, an approach based on an accurate estimate of all the small-signal equivalent circuit elements followed by optimisation of these to get the actual element values was also developed for AlN/GaN MOS-HEMTs. The extracted element values provide feedback for further device process optimisation. The achieved results indicate the suitability of thermally grown Al2O3 for AlN/GaN-based MOS-HEMT technology for future high frequency power applications.

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6

Karlsson, Matilda. "Framställning av multilagerfilmen AlN-HQ." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176218.

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The method Atomic Layer Deposition, ALD, has been available since the 1970´s and it has opened the possibility to fabricate methods for inorganic thin films on a nanoscale. Later the interest for fabricating organic thin films with Molecular Layer Deposition, MLD, and controlling both the thickness and the composition of the film on a molecular scale. To develop the thin films a bit further a combination of organic and inorganic thin films is fabricated and therefore the best properties of the two types of thin films are combined. The purpose of this bachelor´s thesis was to fabricate the multilayer thin film AlN-HQ on a silicon substrate. It began with a substantial review of the literature and planning of the approach. Followed by the laboratory work with fabricating the thin film by ALD. The laboratory work ended with analyzing the thin films by ATR-FT/MIR (attenuated total reflectance fourier transform mid-infrared spectroscopy) and XRR (X-ray reflectivity). All data provided where summarized and evaluated. An analysis of the thickness of the thin film was attempted with XRR but was not adequate for these samples. For a development of the method fabrication of the multilayer film AlN-HQ the thickness needs to be known. It could probably be analyzed by Scanning Electron Microscopy, SEM, but that type of analysis was not a part of this study.

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7

DEPARDIEU, GILLES. "Proprietes optiques des nanocomposites al-aln." Paris 6, 1995. http://www.theses.fr/1995PA066580.

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Le developpement rapide de nouveaux materiaux composites est une occasion de mieux comprendre leur interaction avec les rayonnements electromagnetiques. De nombreuses applications en decoulent comme la realisation de capteurs selectifs, de revetements pour des applications esthetiques ou de furtivite. Cette etude presente une synthese des modeles anciens jusqu'aux plus modernes des proprietes optiques des materiaux heterogenes desordonnes. En particulier, sont discutees l'application des theories du groupe de renormalisation et de la percolation, ainsi que les differentes variantes de theories de milieux effectifs. L'etude est menee sur un composite original: l'al-aln. L'importance de la morphologie 3d est soulignee, et celle-ci est prise en compte dans le modele propose, a l'aide d'outils de traitement d'image et de la programmation hyperparallele. Une comparaison theorie - experience permet enfin de valider le nouveau modele de renormalisation optique 3d

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8

Kaneko, Mitsuaki. "Strain-Controlled AlN Growth on SiC Substrates." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/217172.

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9

Cannard, P. J. "A study of some AlN related polytypes." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234418.

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Wildhack, Stefanie. "Herstellung flüssigphasengesinterter Schichtkomposite aus SiC und AlN." [S.l. : s.n.], 2003. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10806386.

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Books on the topic "AlN"

1

Nascimbene, Angelo. ALn 448, ALn 442, ALn 460: Le automotrici Trans Europ Express. Torino: Locodivision, 1989.

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Paz, Carlos Eugênio. Nas trilhas da ALN. Rio de Janeiro-RJ: Bertrand Brasil, 1997.

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The mayor of Aln. Cardiff: Parthian Books, 1998.

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The sailing ships of Aln & Coquet: A record of the sailing ships of the Rivers Aln and Coquet from 1830 to 1896. Newcastle upon Tyne: R. Keys, 1993.

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Ribeiro, Maria Cláudia Badan. Mulheres na luta armada: Protagonismo feminino na ALN (Ação Libertadora Nacional). São Paulo, SP: Alameda, 2018.

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E, Levinshteĭn M., Rumyantsev Sergey L, and Shur Michael, eds. Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe. New York: Wiley, 2001.

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Maqrān, Ṣāliḥī. Jabhat al-Taḥrīr al-Waṭanī, Jaysh al-Taḥrīr al-Waṭanī =: FLN, ALN. Algiers?: s.n., 2007.

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Au cœur du combat: Récits authentiques des batailles du Commando Si Zoubir et de la Katiba El Hamdania, ALN-Wilaya IV. Alger: Casbah Editions, 2007.

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Genes IX. 9th ed. Me xico: McGraw-Hill, 2008.

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Y*asīn, Walīd. Al-Ain Museum: Guide book. Al Ain: Dept. of Antiquities and Tourism, 1996.

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Book chapters on the topic "AlN"

1

Aliano, Antonio, Giancarlo Cicero, Hossein Nili, Nicolas G. Green, Pablo García-Sánchez, Antonio Ramos, Andreas Lenshof, et al. "AlN." In Encyclopedia of Nanotechnology, 105. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100023.

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Chaudhuri, Reet. "AlN/GaN/AlN High Electron Mobility Transistors." In Springer Theses, 155–92. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-17199-4_5.

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Meyer, B. K. "AlN: energy gaps." In New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds, 197. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-48529-2_81.

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Strauch, D. "AlN: lattice parameters." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 80–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_59.

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Strauch, D. "AlN: elastic moduli." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 99–102. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_63.

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Strauch, D. "AlN: piezoelectric constants." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 107–8. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_65.

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Meyer, B. K. "AlN: critical point energies." In New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds, 198. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-48529-2_82.

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Feenstra, R. M., and S. W. Hla. "2.3.2 AlN, Aluminum Nitride." In Physics of Solid Surfaces, 46. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-47736-6_19.

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Strauch, D. "AlN: internal strain parameter." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_58.

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Strauch, D. "AlN: Debye-Waller factors." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_61.

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Conference papers on the topic "AlN"

1

Zervos, Ch, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, and A. Georgakilas. "AlN/GaN/AlN double heterostructures with thin AlN top barriers." In 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998659.

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Abid, I., R. Kabouche, F. Medjdoub, S. Besendorfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, and H. Miyake. "Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure." In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. http://dx.doi.org/10.1109/ispsd46842.2020.9170170.

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Lu, Chi-Pei, Mathias Schmidt, Heinrich D. B. Gottlob, and Heinrich Kurz. "Integration of ALD AlN work function tuning layers." In Proceedings of 2010 International Symposium on VLSI Technology, System and Application. IEEE, 2010. http://dx.doi.org/10.1109/vtsa.2010.5488934.

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Sitar, Zlatko. "Frontiers in AlN." In Gallium Nitride Materials and Devices XIX, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2024. http://dx.doi.org/10.1117/12.3000731.

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Chen, L. "Optical Reflectance of Bulk AlN Crystals and AlN Epitaxial Films." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994108.

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Liu, Shenghou, Shu Yang, Zhikai Tang, Qimeng Jiang, Cheng Liu, Maojun Wang, and Kevin J. Chen. "Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer." In 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2014. http://dx.doi.org/10.1109/ispsd.2014.6856051.

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Liu, Xiaomeng, Tiantian Liu, Wenyi Liu, Xinyu Zhang, and Hao Deng. "Substrate Effect on Thermal ALD AlN Film Growth Rate." In 2023 China Semiconductor Technology International Conference (CSTIC). IEEE, 2023. http://dx.doi.org/10.1109/cstic58779.2023.10219286.

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Kumtornkittikul, Chaiyasit, Norio Iizuka, Nobuo Suzuki, and Yoshiaki Nakano. "Intersubband transition device using AlN waveguide with GaN/AlN quantum wells." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628352.

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Hickman, Austin, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing, and Debdeep Jena. "Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz." In 2021 Device Research Conference (DRC). IEEE, 2021. http://dx.doi.org/10.1109/drc52342.2021.9467196.

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Hoang, Trang, Patrice Rey, Marie-Helene Vaudaine, Philippe Robert, and Philippe Benech. "A novel structure of AlN/SiO2/Si, AlN/Si SAW filter." In 2008 IEEE International Frequency Control Symposium. IEEE, 2008. http://dx.doi.org/10.1109/freq.2008.4623070.

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Reports on the topic "AlN"

1

Bannister, Joseph, Wei-Min Shen, Joseph Touch, Feili Hou, and Venkata Pingali. Applied Learning Networks (ALN). Fort Belvoir, VA: Defense Technical Information Center, January 2007. http://dx.doi.org/10.21236/ada462328.

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Molitor, Ralf. Structural Subsumption for ALN. Aachen University of Technology, 1998. http://dx.doi.org/10.25368/2022.79.

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Xing, Huili, and Debdeep Jena. Stacked Quantum Wire AlN/GaN HEMTs. Fort Belvoir, VA: Defense Technical Information Center, April 2012. http://dx.doi.org/10.21236/ada580523.

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Yazawa, Keisuke. AlN Base Material Development for High Temperature Application. Office of Scientific and Technical Information (OSTI), August 2023. http://dx.doi.org/10.2172/1994804.

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Osinsky, Andrei. Investigation of Donor and Acceptor Ion Implantation in AlN. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1214736.

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Savrun, E., C. Toy, and M. Sarikaya. High Thermal Conductivity AlN Packages for High-Temperature Electronics. Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada359647.

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Pearton, S. J., C. B. Vartuli, J. W. Lee, S. M. Donovan, J. D. MacKenzie, C. R. Abernathy, R. J. Shul, G. F. McLane, and F. Ren. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN. Office of Scientific and Technical Information (OSTI), April 1996. http://dx.doi.org/10.2172/212561.

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Virkar, A. V. Fabrication, phase transformation studies and characterization of SiC-AlN-Al sub 2 OC ceramics. Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/5053027.

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Virkar, A. V. Fabrication, phase transformation studies and characterization of SiC-AlN-Al sub 2 OC ceramics. Office of Scientific and Technical Information (OSTI), January 1992. http://dx.doi.org/10.2172/5932831.

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Sitar, Zlatko, and Raoul Schlesser. Growth of Single Crystals and Fabrication of GaN and AlN Wafers. Fort Belvoir, VA: Defense Technical Information Center, March 2006. http://dx.doi.org/10.21236/ada444058.

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