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Journal articles on the topic 'AlGaN'

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Author: Grafiati

Published: 4 June 2021

Last updated: 14 September 2024

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1

Risti?, J., M. A. S�nchez-Garc�a, J. M. Ulloa, E. Calleja, J. Sanchez-P�ramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog. "AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy." physica status solidi (b) 234, no. 3 (December 2002): 717–21. http://dx.doi.org/10.1002/1521-3951(200212)234:3<717::aid-pssb717>3.0.co;2-8.

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2

Smart, J. A., A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy. "AlGaN/GaN heterostructures on insulating AlGaN nucleation layers." Applied Physics Letters 75, no. 3 (July 19, 1999): 388–90. http://dx.doi.org/10.1063/1.124384.

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3

Mitrofanov, O., S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar. "High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors." Applied Physics Letters 88, no. 17 (April 24, 2006): 171101. http://dx.doi.org/10.1063/1.2195547.

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4

Khan, M. A., R. A. Skogman, J. M. Van Hove, S. Krishnankutty, and R. M. Kolbas. "Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells." Applied Physics Letters 56, no. 13 (March 26, 1990): 1257–59. http://dx.doi.org/10.1063/1.102530.

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5

Chowdhury, Uttiya, Raymond K. Price, Michael M. Wong, Dongwon Yoo, Xuebing Zhang, Milton Feng, and Russell D. Dupuis. "Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs." Journal of Crystal Growth 272, no. 1-4 (December 2004): 318–21. http://dx.doi.org/10.1016/j.jcrysgro.2004.08.058.

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6

Krishnankutty, S., R. M. Kolbas, M. A. Khan, J. N. Kuznia, J. M. Van Hove, and D. T. Olson. "Optical characterization of AlGaN-GaN-AlGaN quantum wells." Journal of Electronic Materials 21, no. 4 (April 1992): 437–40. http://dx.doi.org/10.1007/bf02660408.

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7

Wang, Tien-Yu, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, and Jinn-Kong Sheu. "Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures." Processes 9, no. 10 (September 26, 2021): 1727. http://dx.doi.org/10.3390/pr9101727.

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The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs. The appropriate period thickness of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may enhance the hole injection of DUV LEDs. Therefore, compared with the reference LEDs, the DUV LEDs with the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL presented forward voltage reduction of 0.23 V and light output power improvement of 15% at a current of 350 mA. Furthermore, the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL could slightly suppress the Auger recombination and current overflow of the DUV LEDs in a high-current operation region. In addition to improved carrier injection, the DUV LEDs with the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL hole injection structure showed reduced light absorption at their emission wavelength compared with the reference LEDs. Therefore, the DUV LEDs with p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may exhibit better light extraction efficiency than the reference LEDs. The enhancement of p-Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL may contribute to improvements in light extraction and hole injection.

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8

Wang, Zeheng, Jun Cao, Ruize Sun, Fangzhou Wang, and Yuanzhe Yao. "Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate." Superlattices and Microstructures 120 (August 2018): 753–58. http://dx.doi.org/10.1016/j.spmi.2018.06.045.

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9

Peng, Enchao, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, and Zhanguo Wang. "Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer." Journal of Alloys and Compounds 576 (November 2013): 48–53. http://dx.doi.org/10.1016/j.jallcom.2013.04.085.

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10

Umana-Membreno, G. A., G. Parish, B. D. Nener, D. Buttari, S. Keller, and U. K. Mishra. "Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures." physica status solidi (b) 244, no. 6 (June 2007): 1877–81. http://dx.doi.org/10.1002/pssb.200674872.

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11

Othman, Nur Afiqah, Nafarizal Nayan, Mohd Kamarulzaki Mustafa, Zulkifli Azman, Megat Muhammad Ikhsan Megat Hasnan, Siti Noryasmin Jaafar, Anis Suhaili Bakri, et al. "Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique." ELEKTRIKA- Journal of Electrical Engineering 20, no. 2 (August 28, 2021): 14–18. http://dx.doi.org/10.11113/elektrika.v20n2.270.

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To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN films, higher temperature or extra time deposition are needed, which is not compatible with industrial fabrication process. Here, a co-sputtering technique between two power supplies of magnetron sputtering (which are RF and HiPIMS) is introduced to deposit the AlGaN thin films. The AlGaN thin films were deposited at various RF power to study their effect on structural properties and morphology of the thin films. AlGaN films were sputtered simultaneously on silicon (111) substrate for short time and at room temperature using GaN and Al target. Then, the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profiler to study their properties. XRD shows the GaN (101) and (013) plane for the AlGaN deposited at RF power of 30 W. Also there only GaN (101) for the AlGaN with 50 W RF power. Yet, the 70 W RF power shows the amorphous structure of AlGaN. The roughness and the grain size of AlGaN film from AFM analysis showed the trend of decreasing and increasing respectively. The roughness of the AlGaN films with 30 W power was 0.82 nm, 0.85 nm for 50 W, and 0.46 nm for 70 W RF power. The grain size of the AlGaN films was 30.06 nm, 32.10 nm, and 37.65 nm for RF power of 30 W, 50 W, and 70 W respectively. The profilometer found that the thickness of the AlGaN films was decreasing with increasing of RF power. This paper can demonstrate a successful co-sputtering technique of AlGaN. Despite AlGaN crystal structure was not able to found out in the XRD analysis, the effect of RF power has been studied to give significant effects on AlGaN thin film deposition.

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12

Hsiao, Yu-Lin, Yi-Jie Wang, Chia-Ao Chang, You-Chen Weng, Yen-Yu Chen, Kai-Wei Chen, Jer-Shen Maa, and Edward Yi Chang. "Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate." Applied Physics Express 7, no. 11 (October 9, 2014): 115501. http://dx.doi.org/10.7567/apex.7.115501.

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13

Wang, Shanlin, Yi An Yin, Huaimin Gu, Naiyin Wang, and Li Liu. "Graded AlGaN/AlGaN Superlattice Insert Layer Improved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes." Journal of Display Technology 12, no. 10 (October 2016): 1112–16. http://dx.doi.org/10.1109/jdt.2016.2583438.

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14

Yin, Yi An, Naiyin Wang, Shuti Li, Yong Zhang, and Guanghan Fan. "Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer." Applied Physics A 119, no. 1 (February 3, 2015): 41–44. http://dx.doi.org/10.1007/s00339-015-9018-2.

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15

Peng, Enchao, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, and Zhanguo Wang. "Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers." Journal of Crystal Growth 383 (November 2013): 25–29. http://dx.doi.org/10.1016/j.jcrysgro.2013.07.017.

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16

Kim, Hogyoung, Seok Choi, and Byung Joon Choi. "Forward Current Transport Properties of AlGaN/GaN Schottky Diodes Prepared by Atomic Layer Deposition." Coatings 10, no. 2 (February 24, 2020): 194. http://dx.doi.org/10.3390/coatings10020194.

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Atomic layer deposited AlGaN on GaN substrate with different thicknesses was prepared and the electron transport mechanism of AlGaN/GaN Schottky diodes was investigated. Above 348 K, both 5 and 10 nm thick AlGaN showed that the thermionic emission model with inhomogeneous Schottky barrier could explain the forward current transport. Analysis using a dislocation-related tunneling model showed that the current values for 10 nm thick AlGaN was matched well to the experimental data while those were not matched for 5 nm thick AlGaN. The higher density of surface (and interface) states was found for 5 nm thick AlGaN. In other words, a higher density of surface donors, as well as a thinner AlGaN layer for 5 nm thick AlGaN, enhanced the tunneling current.

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17

Hirayama, Hideki, Yasushi Enomoto, Atsuhiro Kinoshita, Akira Hirata, and Yoshinobu Aoyagi. "Optical Properties of AlGaN Quantum Well Structures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 696–702. http://dx.doi.org/10.1557/s1092578300004956.

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We demonstrate 230-250 nm efficient ultraviolet (UV) photoluminescence (PL) from AlN(AlGaN)/AlGaN multi-quantum-wells (MQWs) fabricated by metal-organic vapor-phase-epitaxy (MOVPE). Firstly, we show the PL properties of high Al content AlGaN bulk (Al content: 85-95%) emitting from near band-edge. We systematically investigated the PL properties of AlGaN-MQWs consisting of wide bandgap AlGaN (Al content: 53-100%) barrier. We obtained efficient PL emission of 234 and 245 nm from AlN/Al0.18Ga0.82N and Al0.8Ga0.2N/Al0.18Ga0.82N MQWs, respectively, at 77 K. The optimum value of well thickness was approximately 1.5 nm. The emission from the AlGaN MQWs were several tens of times stronger than that of bulk AlGaN. We found that the most efficient PL is obtained at around 240 nm from AlGaN MQWs with Al0.8Ga0.2N barriers. Also, we found that the PL from AlGaN MQW is as efficient as that of InGaN QWs at 77 K.

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18

Fisichella, Gabriele, Giuseppe Greco, Fabrizio Roccaforte, and Filippo Giannazzo. "Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures." Materials Science Forum 821-823 (June 2015): 986–89. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.986.

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A nanoscale electrical characterization of graphene (Gr) contacts to AlxGa1-xN/GaN heterostructures has been carried out using conductive atomic force microscopy. The impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface was evaluated considering two Al0.25Ga0.75N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, i.e. a uniform and defect-free sample and a sample with a high density of V-defects, that locally cause a reduction of the AlGaN thickness. Rectifying contacts were found on the bare (Gr-free) AlGaN surfaces of both samples, but with a more inhomogeneous and lower Schottky barrier height (ΦB≈0.6 eV) in the presence of V-defects with respect to the case of the uniform AlGaN (ΦB≈0.9 eV). Very different electrical behaviour was observed for Gr on the two AlGaN samples, i.e. a low barrier height Schottky contact (ΦB≈0.4 eV) for the uniform AlGaN and an Ohmic contact for the defective AlGaN. Both Schottky and ohmic Gr/AlGaN contacts exhibit an excellent lateral uniformity, that can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities.

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19

Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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20

Dmitriev, V. A., K. Irvine, C. H. Carter, A. S. Zubrilov, and D. V. Tsvetkov. "AlGaN pn junctions." Applied Physics Letters 67, no. 1 (July 3, 1995): 115–17. http://dx.doi.org/10.1063/1.115501.

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21

Zhou, Jin, Yu Feng Jin, En Guang Dai, Zhi Jian Yang, and Bo Shen. "Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer." Advanced Materials Research 214 (February 2011): 526–30. http://dx.doi.org/10.4028/www.scientific.net/amr.214.526.

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500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task. AlGaN/GaN MQW layers were designed to relax the big mismatch stress. Many researcher focused on the stress relax mechanism for the growth of AlGaN alloy. The stress in QW can change the band gap structure and carrier contents of polarize induced charge. Raman spectra were a useful tool to observe the stress of semiconductor materials without damaging the sample. Using 514nm green laser, we only obtained the phonon modes of GaN. So applying 325nm Ar ion laser, we can observed the phonon modes spectra of both AlGaN and GaN layers. According to resonance conditions, the phonon modes of 789.74 cm-1 was origin from AlGaN alloy layer. The phonon modes of 740.89 cm-1 and 575.06 cm-1 were origin from GaN layer. Compared to other results, GaN layer was compress strain. We determined that AlGaN/GaN MQW interlayer relaxed strain stress from lattice mismatch, and phonon modes were clearly observed.

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22

Hung, H., R. M. Lin, S. J. Chang, Y. C. Lin, and H. Kuan. "AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers." IET Optoelectronics 1, no. 4 (August 1, 2007): 147–49. http://dx.doi.org/10.1049/iet-opt:20060088.

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23

Wagner, J., H. Obloh, M. Kunzer, M. Maier, K. Köhler, and B. Johs. "Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures." Journal of Applied Physics 89, no. 5 (March 2001): 2779–85. http://dx.doi.org/10.1063/1.1342022.

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24

Mickevičius, J., G. Tamulaitis, E. Kuokštis, K. Liu, M. S. Shur, J. P. Zhang, and R. Gaska. "Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells." Applied Physics Letters 90, no. 13 (March 26, 2007): 131907. http://dx.doi.org/10.1063/1.2717145.

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25

Heikman, Sten, Stacia Keller, Yuan Wu, James S. Speck, Steven P. DenBaars, and Umesh K. Mishra. "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures." Journal of Applied Physics 93, no. 12 (June 15, 2003): 10114–18. http://dx.doi.org/10.1063/1.1577222.

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26

Tamulaitis, G., J. Mickevičius, E. Kuokštis, K. Liu, M. S. Shur, J. P. Zhang, and R. Gaska. "Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells." physica status solidi (c) 5, no. 6 (May 2008): 2096–98. http://dx.doi.org/10.1002/pssc.200778448.

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27

Chen, Z., Y. Pei, R. Chu, S. Newman, D. Brown, R. Chung, S. Keller, S. P. DenBaars, S. Nakamura, and U. K. Mishra. "Growth and characterization of AlGaN/GaN/AlGaN field effect transistors." physica status solidi (c) 7, no. 10 (June 15, 2010): 2404–7. http://dx.doi.org/10.1002/pssc.200983890.

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28

Tamulaitis, G., J. Mickevičius, K. Kazlauskas, A. Žukauskas, M. S. Shur, J. Yang, and R. Gaska. "Efficiency droop in high-Al-content AlGaN/AlGaN quantum wells." physica status solidi (c) 8, no. 7-8 (April 12, 2011): 2130–32. http://dx.doi.org/10.1002/pssc.201000889.

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29

Yunik, A. D., and A. H. Shydlouski. "Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas." Doklady BGUIR 20, no. 7 (December 9, 2022): 12–19. http://dx.doi.org/10.35596/1729-7648-2022-20-7-12-19.

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Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p-GaN and AlGaN in AlGaN/GaN and p-GaN/AlGaN/GaN heterostructures has been established by laser interferometry and scanning electron microscopy methods due to the changes in refractive indices and etching rates. During inductively coupled plasma reactive ion etching of GaN and p-GaN layers, the intensity of the reflected signal changes according to a periodic law with the thickness change period of about 144 nm, and for AlGaN layers about 148 nm, which is due to differences in their refractive indices and etching rates. During the crossing of the p-GaN/AlGaN and AlGaN/GaN interface, there is an abrupt change in the intensity of the reflected signal within 2.7–9.5 % for 20–40 s, due to changes in the aluminum concentration, refractive indices, and etching rate at the interfaces. The change in the periodicity of the interferogram, which is accompanied by a jump in intensity when passing through the etching front through the p-GaN/AlGaN and AlGaN/GaN interface, makes it possible to determine the end time of the inductively coupled plasma reactive ion etching of the AlGaN and p-GaN layers using laser interferometry in real time in AlGaN/GaN and p-GaN/AlGaN/GaN heterostructures with two-dimensional electron gas. The obtained results can be used to form microwave and power electronics devices elements which are based on the AlGaN/GaN heterostructures.

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30

Hirayama, H., Y. Aoyagi, and S. Tanaka. "Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 852–57. http://dx.doi.org/10.1557/s1092578300003525.

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We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm−2 down to 2×109 cm−2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

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31

Yusuf, Yusnizam, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, and Mohd Syamsul. "Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT." Crystals 13, no. 1 (January 3, 2023): 90. http://dx.doi.org/10.3390/cryst13010090.

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This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted in the smooth surface of the layer as well as the overgrown of the AlGaN layer. Subsequently, the AlGaN/GaN heterostructure was fabricated into a lateral HEMT with wide gate-to-drain length (LGD). The device exhibited a clear working HEMT characteristic with high breakdown voltages up to 497 V. In comparison to many reported AlGaN/GaN HEMTs, no AlGaN interlayer was inserted in our AlGaN/GaN heterostructure. By improving the growth conditions for the two-step growth, the performance of AlGaN/GaN HEMTs could be improved further.

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32

Valera, Lucie, Vincent Grenier, Sylvain Finot, Catherine Bougerol, Joël Eymery, Gwénolé Jacopin, and Christophe Durand. "M-plane AlGaN digital alloy for microwire UV-B LEDs." Applied Physics Letters 122, no. 14 (April 3, 2023): 141101. http://dx.doi.org/10.1063/5.0141568.

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The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five periods of two monolayer-thick layers of GaN and AlGaN (approximately 50% Al-content) is integrated into the middle of an n-p GaN/AlGaN junction to design core-shell wire- μLED. The optical emission of the active zone investigated by 5 K cathodoluminescence is consistent with the AlGaN bulk alloy behavior. Several contributions from 295 to 310 nm are attributed to the lesser thickness and/or composition fluctuations of AlGaN DA. Single-wire μLED is fabricated using a lithography process, and I–V measurements confirm a diode rectifying behavior. Room temperature UV electroluminescence originating from m-plane AlGaN DA is accomplished at 310 nm.

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33

Fisichella, Gabriele, Giuseppe Greco, Fabrizio Roccaforte, and Filippo Giannazzo. "Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale." Nanoscale 6, no. 15 (2014): 8671–80. http://dx.doi.org/10.1039/c4nr01150c.

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34

Hirose, Kotaro, Norimichi Chinone, and Yasuo Cho. "Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy." Materials Science Forum 858 (May 2016): 1182–85. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1182.

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AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.

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35

Liu, Yanli, Xifeng Yang, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. "Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering." Advances in Condensed Matter Physics 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/918428.

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The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

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36

Maeda, Narihiko, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, and Naoki Kobayashi. "Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 362–68. http://dx.doi.org/10.1557/s1092578300004518.

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Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 μm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

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37

Kuball, M., M. Benyoucef, F. H. Morrissey, and C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.

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We report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

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38

Dai, Qian, Xiong Zhang, Zi Li Wu, and Xiang Hua Zeng. "Enhanced Performance of the Non-Polar Ultraviolet Light-Emitting Diodes with Lattice-Matched Quaternary Quantum Barriers." Key Engineering Materials 907 (January 21, 2022): 3–9. http://dx.doi.org/10.4028/www.scientific.net/kem.907.3.

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The performance of non-polar AlGaN-based ultraviolet light-emitting diode (LED) with completely lattice-matched AlInGaN quantum barriers along the [1-100] m-direction were firstly proposed and intensively studied. The simulation results indicated that the internal quantum efficiency (IQE) of the non-polar AlGaN-based LED could be enhanced by 9.7% at an injection current of 350 mA with the introduction of AlInGaN barriers. Compared with the nonpolar AlGaN-based LED with conventional AlGaN quantum barriers, not only the Shockley–Read–Hall recombination rate for the nonpolar AlGaN-based LED with quaternary barriers was remarkably reduced, but also the radiative recombination rate was significantly improved. The enhanced performance for the nonpolar AlGaN-based LED with AlInGaN barriers could be interpreted as the result that the density of dislocations in active region was decreased due to the reduced in-plane strain in the AlGaN/AlInGaN MQWs.

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Shimizu, Mitsuaki, Masaki Inada, Shuichi Yagi, Akira Nakajima, Hajime Okumura, Akinori Ubukata, Yoshiki Yano, and Nakao Akutsu. "Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors." Materials Science Forum 600-603 (September 2008): 1329–32. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1329.

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The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

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40

Bai, Yun, Hua Jun Shen, Cheng Zhan Li, Yi Dan Tang, and Xin Yu Liu. "Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor." Materials Science Forum 858 (May 2016): 1202–5. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1202.

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The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are simulated in detail. Then, the polarization effect of AlGaN heterojunction on the performance of AlGaN DHPT is also investigated. Results show that positive polarization charge would enhance the photoresponse of the device, whereas the negative polarization charge would reduce the photoresponse significantly. The reasons for the polarization effect on performance of AlGaN DHPT are discussed.

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41

Manandhar, Mahesh B., and Mohammad A. Matin. "Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices." Journal of Low Power Electronics and Applications 11, no. 3 (September 3, 2021): 33. http://dx.doi.org/10.3390/jlpea11030033.

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The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material with intrinsic properties best suited for high power switching applications. This paper simulates and compares the thermal and electrical performance of AlGaN and Silicon (Si) MOSFETs, modeled in COMSOL Multiphysics. Comparisons between similar AlGaN/GaN and Si power modules are made in terms of heatsink requirements. The temperatures for the same operating voltage are found to be significantly lower for the AlGaN MOSFETs structures, compared to Si. The heatsink size for the AlGaN/GaN is found to be smaller compared to Si for the power modules.

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42

Amano, Hiroshi, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki. "AlN and AlGaN by MOVPE for UV Light Emitting Devices." Materials Science Forum 590 (August 2008): 175–210. http://dx.doi.org/10.4028/www.scientific.net/msf.590.175.

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The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

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Rathore, Saad Ullah, Sima Dimitrijev, Hamid Amini Moghadam, and Faisal Mohd-Yasin. "Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures." Nanomanufacturing 1, no. 3 (December 2, 2021): 171–75. http://dx.doi.org/10.3390/nanomanufacturing1030012.

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This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN, whereas surprisingly, it is independent of the piezoelectric polarization.

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Miyake, Hiroki, Tsunenobu Kimoto, and Jun Suda. "SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter." Materials Science Forum 645-648 (April 2010): 1029–32. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1029.

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In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN) layer is grown on a SiC pn junction as a widegap emitter. By using quasi-AlGaN emitter, we have demonstrated successful control of band offset of AlGaN/SiC. Quasi-AlGaN/SiC HBT with an Al content over 0.5, which has no potential barrier to electron injection from an n-AlGaN emitter to a p-SiC base, exhibited a common-emitter current gain of β ~ 2.7, whereas the HBT with an Al content below 0.5 showed β ~ 0.1.

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45

Huang, Yujie, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang, and Ping Chen. "Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors." Nanomaterials 12, no. 18 (September 11, 2022): 3148. http://dx.doi.org/10.3390/nano12183148.

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The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors.

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46

Mickevičius, J., J. Jurkevičius, K. Kazlauskas, A. Žukauskas, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, and R. Gaska. "Stimulated emission in AlGaN/AlGaN quantum wells with different Al content." Applied Physics Letters 100, no. 8 (February 20, 2012): 081902. http://dx.doi.org/10.1063/1.3688051.

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47

Yang, Lin'an, Yue Li, Ying Wang, Shengrui Xu, and Yue Hao. "Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes." Journal of Applied Physics 119, no. 16 (April 28, 2016): 164501. http://dx.doi.org/10.1063/1.4948331.

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48

Hezabra, A., N. A. Abdeslam, N. Sengouga, and M. C. E. Yagoub. "2D study of AlGaN/AlN/GaN/AlGaN HEMTs’ response to traps." Journal of Semiconductors 40, no. 2 (February 2019): 022802. http://dx.doi.org/10.1088/1674-4926/40/2/022802.

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49

Hou, Mengjun, Zhixin Qin, Lisheng Zhang, Tianyang Han, Mingxing Wang, Fujun Xu, Xinqiang Wang, Tongjun Yu, Zheyu Fang, and Bo Shen. "Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells." Superlattices and Microstructures 104 (April 2017): 397–401. http://dx.doi.org/10.1016/j.spmi.2017.02.051.

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50

Khaouani, M., A. Hamdoune, H. Bencherif, Z. Kourdi, and L. Dehimi. "An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation." Optik 217 (September 2020): 164797. http://dx.doi.org/10.1016/j.ijleo.2020.164797.

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