Relevant bibliographies by topics / AlGaN

Academic literature on the topic 'AlGaN'

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Published: 4 June 2021
Last updated: 14 September 2024

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Journal articles on the topic "AlGaN"

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Risti?, J., M. A. S�nchez-Garc�a, J. M. Ulloa, E. Calleja, J. Sanchez-P�ramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog. "AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy." physica status solidi (b) 234, no. 3 (December 2002): 717–21. http://dx.doi.org/10.1002/1521-3951(200212)234:3<717::aid-pssb717>3.0.co;2-8.

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Smart, J. A., A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy. "AlGaN/GaN heterostructures on insulating AlGaN nucleation layers." Applied Physics Letters 75, no. 3 (July 19, 1999): 388–90. http://dx.doi.org/10.1063/1.124384.

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Mitrofanov, O., S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar. "High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors." Applied Physics Letters 88, no. 17 (April 24, 2006): 171101. http://dx.doi.org/10.1063/1.2195547.

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Khan, M. A., R. A. Skogman, J. M. Van Hove, S. Krishnankutty, and R. M. Kolbas. "Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells." Applied Physics Letters 56, no. 13 (March 26, 1990): 1257–59. http://dx.doi.org/10.1063/1.102530.

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Chowdhury, Uttiya, Raymond K. Price, Michael M. Wong, Dongwon Yoo, Xuebing Zhang, Milton Feng, and Russell D. Dupuis. "Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs." Journal of Crystal Growth 272, no. 1-4 (December 2004): 318–21. http://dx.doi.org/10.1016/j.jcrysgro.2004.08.058.

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Krishnankutty, S., R. M. Kolbas, M. A. Khan, J. N. Kuznia, J. M. Van Hove, and D. T. Olson. "Optical characterization of AlGaN-GaN-AlGaN quantum wells." Journal of Electronic Materials 21, no. 4 (April 1992): 437–40. http://dx.doi.org/10.1007/bf02660408.

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Wang, Tien-Yu, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, and Jinn-Kong Sheu. "Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures." Processes 9, no. 10 (September 26, 2021): 1727. http://dx.doi.org/10.3390/pr9101727.

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The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs. The appropriate period thickness of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may enhance the hole injection of DUV LEDs. Therefore, compared with the reference LEDs, the DUV LEDs with the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL presented forward voltage reduction of 0.23 V and light output power improvement of 15% at a current of 350 mA. Furthermore, the 10-pair Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL could slightly suppress the Auger recombination and current overflow of the DUV LEDs in a high-current operation region. In addition to improved carrier injection, the DUV LEDs with the p-Al0.8Ga0.2N/Al0.48Ga0.52N SL hole injection structure showed reduced light absorption at their emission wavelength compared with the reference LEDs. Therefore, the DUV LEDs with p-Al0.8Ga0.2N/Al0.48Ga0.52N SL may exhibit better light extraction efficiency than the reference LEDs. The enhancement of p-Al0.8Ga0.2N (1 nm)/Al0.48Ga0.52N (1 nm) SL may contribute to improvements in light extraction and hole injection.
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Wang, Zeheng, Jun Cao, Ruize Sun, Fangzhou Wang, and Yuanzhe Yao. "Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate." Superlattices and Microstructures 120 (August 2018): 753–58. http://dx.doi.org/10.1016/j.spmi.2018.06.045.

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Peng, Enchao, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, and Zhanguo Wang. "Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer." Journal of Alloys and Compounds 576 (November 2013): 48–53. http://dx.doi.org/10.1016/j.jallcom.2013.04.085.

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Umana-Membreno, G. A., G. Parish, B. D. Nener, D. Buttari, S. Keller, and U. K. Mishra. "Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures." physica status solidi (b) 244, no. 6 (June 2007): 1877–81. http://dx.doi.org/10.1002/pssb.200674872.

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Dissertations / Theses on the topic "AlGaN"

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Lundskog, Anders. "Characterization of AlGaN HEMT structures." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-9729.

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During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. This work is an exploration of the electrical and structural properties of advanced HEMT structure containing AlN exclusionlayer and double heterojunctions. These small modifications had great impact on the electrical properties.

In this work, AlGaN HEMT structures grown on SiC substrates by a hot-wall MOCVD have been characterized for their properties using optical microscopy, scanning electron microscopy, transmission electron microscopy, capacitance/voltage, eddy-current resistivity, and by homebuilt epi-thickness mapping equipment.

A high electron mobility of 1700 [cm2/Vs] was achieved in an AlN exclusion-layer HEMT. A similar electron mobility of 1650 [cm2/Vs] was achieved in a combination of a double heterojunction and exclusion-layer structure. The samples had approximately the same electron mobility but with a great difference: the exclusion-layer version gave a sheet carrier density of 1.58*1013 [electrons/cm2] while the combination of double heterojunction and exclusion-layer gave 1.07*1013 [electrons/cm2]. A second 2DEG was observed in most structures, but not all, but was not stable with time.

The structures we grew during this work were also simulated using a one-dimensional Poisson-Schrödinger solver and the simulated electron densities were in fairly good agreement with the experimentally obtained. III-nitride materials, the CVD concept, and the onedimensional solver are shortly explained.

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Arehart, Aaron R. "Investigation of electrically active defects in GaN, AlGaN, and AlGaN/GaN high electron mobility transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1253626881.

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Lu, Bin Ph D. Massachusetts Institute of Technology. "AlGaN/GaN-based power semiconductor switches." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82354.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 209-219).
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers also reduces device cost and makes them easier for wide market adoption. However, the development of AlGaN/GaN-based power switches has encountered three major obstacles: the limited breakdown voltage of AlGaN/GaN transistors grown on Si substrates; the low performance of normally-off AlGaN/GaN transistors; and the degradation of device performance under high voltage pulsed conditions. This thesis studies these issues and presents new approaches to address these obstacles. The first part of the thesis studies the breakdown mechanism in AlGaN/GaN-on-Si transistors. A new quantitative model-trap-limited space-charge impact-ionization model- is developed. Based on this model, a set of design rules is proposed to improve the breakdown voltage of AlGaN/GaN-on-Si transistors. New technologies have also been demonstrated to increase the breakdown voltage of AlGaN/GaN-on-Si transistors beyond 1500 V. The second part of the thesis presents three technologies to improve the performance of normally-off AlGaN/GaN transistors. First, a dual-gate normally-off MISFET achieved high threshold voltage, high current and high breakdown voltage simultaneously by using an integrated cascode structure. Second, a tri-gate AlGaN/GaN MISFET demonstrated the highest current on/off ratio in normally-off GaN transistors with the enhanced electrostatic control from a tri-gate structure. Finally, a new etch-stop barrier structure is designed to address low channel mobility, high interface density and non-uniformity issues associated with the conventional gate recess technology. Using this new structure, normally-off MISFETs demonstrated high uniformity, steep sub-threshold slope and a record channel effective mobility. The thesis concludes with a new dynamic on-resistance measurement technique. With this method, the hard- and soft-switching characteristics of GaN transistors were measured for the first time.
by Bin Lu.
Ph.D.
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Banerjee, Abhishek. "AlGaN/GaN based enhancement mode MOSHEMTs." Thesis, University of Glasgow, 2010. http://theses.gla.ac.uk/2104/.

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This thesis describes a new gallium nitride (GaN) based transistor technology for electronic switching applications. Conventional GaN based transistors are of the high electron mobility transistor (HEMT) type and are depletion mode devices. These are not suitable for switching applications since an extra DC supply is required to bias the device in the cut-off (off-state) region and the devices are not fail-safe, i.e. incase of malfunction a short-circuit can exist between the main DC supply and ground. Enhancement mode (E-Mode) or normally-off devices can overcome these limitations and if realized in the GaN material system would benefit from the good material properties that support large breakdown voltages and low On-resistances. Fabrication of high performace E-mode GaN devices with low On-resistance and high breakdown voltage still remains a big challenge to date. In this thesis a new method for realizing enhancement mode aluminium gallium nitride - gallium nitride (AlGaN/GaN) devices using a localized gate-foot oxidation has been described. Thermal oxidation of the AlGaN barrier layer converts the top surface/part of this layer into aluminium oxide (Al2 O3 ) and gallium oxide (Ga2O3 ), which serve as a good gate dielectric and improve the gate leakage current by several orders of magnitude compared to a Schottky gate. The oxidation process leaves a thinner AlGaN barrier which can result in normally o§ operation. Without special precaution, however, the oxidation of the AlGaN barrier is not uniform from the top but occurs at higher rates at the defect/dislocation sites. This makes it impossible to control the barrier thickness and so rendering the barrier useless. To avoid the problem of non-uniform oxidation, a thin layer of aluminum is first deposited on the barrier layer and oxidized to form aluminium oxide on top. This additional oxide layer seems to ensure uniform oxidation of the AlGaN barrier layer underneath on subsequent further oxidation. Results of the fabricated 2 um x 100 um AlGaN/GaN MOS-HEMTs with a partially oxidized barrier layer showed a threshold voltage of -0.5 V (compared to -3 V for a Schottky devive fabricated on the same epilayer structure) and a maximum drain current of 800mA/mm at high gate bias of 5 V with very little current compression. The peak extrinsic transconductance of the device is 160 mS/mm at a drain-source voltage of 10 V with a very low specific On-resistance of 9:8 ohm.mm2 and an off-state breakdown voltage higher than 42 V. Capacitance-Voltage (C-V) measurements of Al2O3 /AlGaN /GaN circular test metal-oxide-semiconductor structures were observed and measured. They exhibit no hysteresis, indicating the good quality of the thermally grown aluminium oxide for realizing AlGaN/GaN based E-Mode devices for high frequency and high power applications.
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Schörmann, Jörg. "Cubic AlGaN, GaN structures for device application." [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985232277.

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Baltynov, Turar. "Innovative approaches for AlGaN/GaN-based technology." Thesis, University of Sheffield, 2016. http://etheses.whiterose.ac.uk/13522/.

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Gallium Nitride (GaN) has been proven to be a very suitable material for advanced power electronics on account of its outstanding material properties. Today, researchers are exploring GaN-based high electron mobility transistors (HEMTs) for conventional as well as high-end solutions in the range of 600 – 1200 V. However, thermal and power density limitations have impeded the achievement of the peak operational capability of AlGaN/GaN HEMTs. GaN-on-Diamond technology has proven to be a feasible solution to reduce thermal resistance and increase power density of AlGaN/GaN HEMTs for RF applications. The work presented in this thesis is focused on the realisation of high-voltage GaN-on-Diamond power semiconductor devices. This goal was achieved through extensive numerical simulations applied to device design, fabrication, and characterisation. The fabricated devices include conventional AlGaN/GaN HEMT design in circular and linear form with and without field plate engineering. The circular GaN-on-Diamond HEMTs with gate width of ~ 430 μm, gate length of 3 μm, gate-to-drain separation of 17 μm and source field plate length of 3 μm have shown breakdown voltage of ~ 1.1 kV. In this work a new concept of normally-off optically-controlled AlGaN/GaN-based power semiconductor device is proposed. A simulation study has been carried out in order to explore the DC characteristics, switching characteristics, breakdown voltage, and current gain of these novel devices. The typical structure comprises a 20 nm of undoped Al0.23Ga0.77N barrier layer, a 1.1 μm undoped-GaN buffer layer and a p-doped region (to locally deplete the electron channel and ensure a normally-off operation). The simulation study shows that the gain and the breakdown voltage of the device are highly dependent on the depth of the p-doped region. At a particular depth of the p-doped region of 500 nm the gain of the device is 970 (at light intensity of 7 W/cm2) and the breakdown voltage is ~ 350 V. The rise and fall times of the device is found to be 0.4 μsec and 0.3 μsec respectively. The simulation results show a significant potential of the proposed structure for high-frequency and high-power applications.
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Schwarz, Stefan U. [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Biofunktionalisierung und -sensorik mit AlGaN/GaN-Feldeffekttransistoren." Freiburg : Universität, 2013. http://d-nb.info/1123478864/34.

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Gerrer, Thomas [Verfasser], Oliver [Akademischer Betreuer] Ambacher, and Volker [Akademischer Betreuer] Cimalla. "Transfer von AlGaN/GaN-Hochleistungstransistoren auf Diamant." Freiburg : Universität, 2018. http://d-nb.info/1193052351/34.

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APPASWAMY, ARAVIND C. "SIMULATION OF SHORT CHANNEL AlGaN/GaN HEMTs." University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1109277211.

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Phumisithikul, Karen L. "Surface photovoltage transients for p-type AlGaN." VCU Scholars Compass, 2015. http://scholarscompass.vcu.edu/etd/3787.

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There is an understanding of surface photovoltage (SPV) behavior for GaN, yet little is known about the SPV behavior for AlGaN. In this work, a Kelvin probe was used to measure the SPV for p-type AlGaN. Very slow SPV transients were found in AlGaN, which could not be explained with a simple thermionic model. A possible explanation of this behavior is the segregation of impurities to the surface, which causes significant reduction of the depletion region width (down to 2 nm), with carrier tunneling and hopping becoming the dominant mechanisms responsible for the SPV transients. To verify this assumption, the near-surface defective region (about 40 nm) has been removed through the ICP-RIE process. After the etching, the SPV transients became fast and increased in magnitude by about 0.6 eV. By using the thermionic model, band bending was estimated to be -1 eV.
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Books on the topic "AlGaN"

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Badam, Batyn. Algan déér Todkhon nutag. Ulaanbaatar: no indication, 2006.

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Oi︠u︡unt︠s︡ėt︠s︡ėg, Zh. Algan dėėrkhi shuvuu: Shu̇lgiĭn tu̇u̇vėr. Chicago: Megatron Group, 2012.

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He, Li, Dingjiang Yang, and Guoqiang Ni. Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-52718-4.

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Fresenius, Barbara. Das unerschrockene Wort: Preis der Lutherstädte an Emel Abidin-Algan. Speyer: Stadtverwaltung, 2008.

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Botoi︠a︡rov, Kambaraly. Kȯȯnȯrgu̇s muras: "Manastyn" "Kȯkȯtȯĭdu̇n ashy" ėpizodunun Ch. Valikhanov zhazdyryp algan varianty. Bishkek: Aĭbek, 1996.

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Mambetov, Zhuma. Ten︠g︡irim su̇ĭgȯn ten︠g︡ir-too: Narynym-altyn beshigim (Ulamyshtan bashat algan, Uchu cheksiz uluu bai︠a︡n). Bishkek: [publisher not identified], 2016.

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United States. National Aeronautics and Space Administration., ed. AlGaN channel transistors for power management and distribution: Final report, phase I SBIR contract N00014-96-C-0251. [Washington, DC: National Aeronautics and Space Administration, 1996.

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A. J. M. Abdur Rouf. Lake Kenyir: Ecology of periphytic algae. Kuala Terengganu, Terengganu: Penerbit UMT, Universiti Malaysia Terengganu, 2010.

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International, Conference on Harmful Algae (8th 1997 Vigo Spain). Harmful algae =: Algas nocivas : proceedings of the VIII International Conference on Harmful Algae, Vigo Spain, 25-29 June 1997. [Vigo, Spain?]: Intergovernmental Oceanographic Commission of Unesco, 1998.

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Denmark) International Conference on Harmful Algae (12th 2006 Copenhagen. Proceedings of the 12th International Conference on Harmful Algae: Copenhagen, Denmark, 4-8 September 2006. Edited by Moestrup Øjvind, Doucette, Gregory J. (Gregory John), 1957-, Intergovernmental Oceanographic Commission, and International Society for the Study of Harmful Algae. [Copenhagen, Denmark]: UNESCO Publishing, 2008.

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Book chapters on the topic "AlGaN"

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He, Li, Dingjiang Yang, and Guoqiang Ni. "AlGaN Epitaxial Technology." In Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN, 265–350. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-52718-4_4.

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Yang, Wei. "AlGaN UV Photodetectors." In III-V Nitride Semiconductors, 675–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-14.

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Teubert, Jörg, Jordi Arbiol, and Martin Eickhoff. "AlGaN/GaN Nanowire Heterostructures." In Wide Band Gap Semiconductor Nanowires 2, 1–40. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984291.ch1.

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Dai, Jiangnan, Jingwen Chen, Jun Zhang, Wei Zhang, Shuai Wang, Feng Wu, and Changqing Chen. "Solar-Blind AlGaN Devices." In Handbook of Solid-State Lighting and LEDs, 285–97. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in optics and optoelectronics ; 25: CRC Press, 2017. http://dx.doi.org/10.1201/9781315151595-15.

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Chakraborty, Apurba, Saptarsi Ghosh, Subhashis Das, Ankush Bag, and Dhrubes Biswas. "Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures." In Springer Proceedings in Physics, 183–86. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_28.

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Lima, A. P., C. Miskys, O. Ambacher, M. Stutzmann, R. Dimitrov, V. Tilak, M. J. Murphy, and L. F. Eastman. "AlGaN/GaN lateral polarity heterostructures." In Springer Proceedings in Physics, 303–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_139.

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Wunderer, Thomas, John E. Northrup, and Noble M. Johnson. "AlGaN-Based Ultraviolet Laser Diodes." In III-Nitride Ultraviolet Emitters, 193–217. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_8.

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Lundin, W. V., A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A. I. Besulkin, A. V. Fomin, and D. S. Sizov. "MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range." In UV Solid-State Light Emitters and Detectors, 223–31. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_17.

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Kalinina, E. V., A. E. Cherenkov, G. A. Onushkin, Ya I. Alivov, D. C. Look, B. M. Ataev, A. K. Omaev, and C. M. Chukichev. "ZnO/AlGaN Ultraviolet Light Emitting Diodes." In NATO Science Series II: Mathematics, Physics and Chemistry, 211–16. Dordrecht: Springer Netherlands, 2005. http://dx.doi.org/10.1007/1-4020-3475-x_18.

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Pantha, B. N., J. Y. Lin, and H. X. Jiang. "High-Quality Al-Rich AlGaN Alloys." In Springer Series in Materials Science, 29–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_2.

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Conference papers on the topic "AlGaN"

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Lantigua, Christopher, Tran-Chau Truong, Chelsea Kincaid, Dipendra Khatri, Aamir Mushtaq, and Michael Chini. "TIPTOE Laser Waveform Sampling with AlGaN Photodiode for Fast Scanning Measurements." In CLEO: Science and Innovations, SM4L.4. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm4l.4.

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Multiphoton excitation in AlGaN provides a sub-cycle gate capable of sampling few-cycle waveforms in the near-infrared. We demonstrate near-infrared laser waveform sampling using an AlGaN photodiode in a scanning TIPTOE geometry.
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Gündogdu, Sinan, Tommaso Pregnolato, Sofia Pazzagli, Tim Kolbe, Sylvia Hagedorn, Markus Weyers, and Tim Schröder. "AlGaN on AlN/Sapphire: A New Material Platform in Integrated Photonics Technology." In CLEO: Applications and Technology, AW3J.4. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.aw3j.4.

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AlGaN on AlN/Sapphire stands out in photonics for its strong nonlinearity, electro-optic modulability, and low loss in the visible spectrum. We fabricate and characterize AlGaN photonic devices, including ring resonators, directional couplers, and tapers.
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Zhou, Yugang, Rongming Chu, Kevin J. Chen, and Kei May Lau. "AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.g-9-4.

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Jiang, R. L., Z. M. Zhao, P. Chen, D. J. Xi, B. Shen, R. Zhang, and Y. D. Zheng. "Photocurrent Properties of AlGaN/GaN/AlGaN Photodetecters on Si." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.e-1-5.

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Razeghi, Manijeh, and Antoni Rogalski. "AlGaN ultraviolet detectors." In Photonics West '97, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271196.

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Mitrofanov, Oleg, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar. "High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities." In Integrated Optoelectronic Devices 2007, edited by Hadis Morkoc and Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.707924.

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Hsiao, Yu-Lin, Chia-Ao Chang, and Edward Yi Chang. "Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920838.

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Matulionis, A. "Microwave Noise In Biased AlGaN/GaN And AlGaN/AlN/GaN Channels." In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036709.

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Kanatani, Keito, Satoshi Yoshida, Akio Yamamoto, and Masaaki Kuzuhara. "Characterization of AlGaN/GaN HEMTs with directly regrown AlGaN barrier layer." In 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2017. http://dx.doi.org/10.1109/imfedk.2017.7998059.

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Shimada, Ryoko, Jinqiao Xie, and Hadis Morkoç. "High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer." In Integrated Optoelectronic Devices 2007, edited by Hadis Morkoc and Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.707886.

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Reports on the topic "AlGaN"

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Look, David C. Donors, Acceptors, and Traps in AlGaN and AlGaN/GaN Epitaxial Layers. Fort Belvoir, VA: Defense Technical Information Center, July 2006. http://dx.doi.org/10.21236/ada457761.

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Crespo, Antonio. AlGaN Directional Coupler Switch. Fort Belvoir, VA: Defense Technical Information Center, May 2002. http://dx.doi.org/10.21236/ada416184.

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Trew, Robert J. mm-Wave AlGaN/GaN HFET's. Fort Belvoir, VA: Defense Technical Information Center, May 2003. http://dx.doi.org/10.21236/ada416119.

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Mohney, Suzanne E. Contacts to AlGaN for UV Detectors. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada413801.

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Buckley, James H., and Daniel Leopold. High Quantum Efficiency AlGaN/InGaN Photodetectors. Office of Scientific and Technical Information (OSTI), November 2009. http://dx.doi.org/10.2172/968011.

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Han, J., and M. H. Crawford. MOCVD growth of AlGaN UV LEDs. Office of Scientific and Technical Information (OSTI), September 1998. http://dx.doi.org/10.2172/658459.

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Shealy, James R. Enhancement Mode Power Switching AlGaN HEMTs. Fort Belvoir, VA: Defense Technical Information Center, May 2013. http://dx.doi.org/10.21236/ada584741.

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HAN, JUNG, CHRISTINE C. MITCHELL, KAREN NMN WALDRIP, TERRY R. GUILINGER, MICHAEL J. KELLY, JAMES G. FLEMING, SYLVIA SANTA INES TSAO, et al. AlGaN Materials Engineering for Integrated Multi-Function Systems. Office of Scientific and Technical Information (OSTI), January 2001. http://dx.doi.org/10.2172/780286.

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Mishra, Umesh. Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors. Fort Belvoir, VA: Defense Technical Information Center, July 2003. http://dx.doi.org/10.21236/ada416411.

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Blair, S. M. AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor. Fort Belvoir, VA: Defense Technical Information Center, November 2003. http://dx.doi.org/10.21236/ada422632.

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