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Journal articles on the topic 'Algabal'

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Published: 10 March 2023

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1

Awad, Abdel Aziz, Dakhel H. Alzubaidi, and Mohamed A. Mohamed. "A STUDY OF ENVIRONMENTAL AWARENESS FOR FARMERS’ SONS IN THE REGION OF ALGABAL ALAKHDAR-LIBYA." Fayoum Journal of Agricultural Research and Development 23, no. 1 (January 1, 2009): 8–17. http://dx.doi.org/10.21608/fjard.2009.197043.

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2

abdelghany, abdelghany, Almahdi Akraeim, and Salah eldein Saad. "Evaluation the impact of the transition period on some hematobiochemical and hormonal parameters in Native sheep in Algabal Alakhdar governorate in Libya." Benha Veterinary Medical Journal 40, no. 2 (July 1, 2021): 19–23. http://dx.doi.org/10.21608/bvmj.2021.71045.1390.

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3

Remmik, Marvi, Liina Lepp, and Ingrid Koni. "Algajad õpetajad koolijuhi ja kolleegide toetusest esimestel tööaastatel." Eesti Haridusteaduste Ajakiri. Estonian Journal of Education 3, no. 1 (April 30, 2015): 173–201. http://dx.doi.org/10.12697/eha.2015.3.1.08.

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Esimestel tööaastatel peavad algajad õpetajad toime tulema erinevate olukordadega, sest sel ajal arenevad õpetamisoskused, saadakse õpetajate kogukonna liikmeks ning kujuneb õpetaja identiteet. Uurimused on näidanud, et algajad õpetajad vajavad ametisse sisseelamisel toetust, mistõttu on loodud ka mitmesuguseid tugisüsteeme. Samas on vähe tähelepanu pööratud sellele, kuidas kohanevad algajad õpetajad koolikeskkonnaga, millisena tajutakse erinevaid koolikollektiivi liikmeid enda toetajana ning mida ootavad algajad õpetajad koolikeskkonnalt kui tervikult, et õpetajatöösse paremini sisse elada. Artikli eesmärk on analüüsida algajate õpetajate kirjeldusi kohanemisest koolikeskkonnaga ja institutsiooni erinevate liikmete rolli selles. Andmete kogumiseks salvestati täies mahus ühe aasta vältel toimunud kutseaasta seminarid. Seminaridel osales 13 algajat õpetajat. Tulemused näitasid, et algajate õpetajate kogemused kooliga kohanemisel olid erinevad. Eduka kohanemise eeldusena nimetati kolleegide toetavat hoiakut ja algajate õpetajate püüdlusi igas olukorras hakkama saada. Kõige sagedasemaks koolikeskkonnaga mittekohanemise põhjuseks peeti algajate õpetajate ja institutsiooni liikmete erinevusi väärtushinnangutes. Koolijuhi osa algaja õpetaja toetajana hinnati väheoluliseks, kuna algajatel õpetajatel tööalased kokkupuuted koolijuhiga peaaegu puudusid. Summary

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4

Kang, Donghan, and Keugtae Kim. "Real Wastewater Treatment Using a Moving Bed and Wastewater-Borne Algal–Bacterial Consortia with a Short Hydraulic Retention Time." Processes 9, no. 1 (January 7, 2021): 116. http://dx.doi.org/10.3390/pr9010116.

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Algal–bacterial consortium is a promising technology, combined with wastewater treatment plants, because algae produce molecular oxygen for nitrification and organic removal and reduce carbon dioxide emissions. However, algal–bacterial consortia based on suspended growth require a relatively long hydraulic retention time (HRT) of 4 d to 6 d for removal of organic matter and nutrients. For the algal–bacterial consortia in a photobioreactor (PBR) containing a moving bed, the organic matter and nutrient removal and the community structure of algal–bacterial consortia were investigated to determine the performance under a relatively short HRT of 2.5 d. Moving media containing algal–bacterial consortia enhanced the photosynthetic oxygen concentration (0.2 mg dissolved oxygen (DO)·L−1 to 5.9 mg DO·L−1), biochemical oxygen demand removal (88.0% to 97.2%), ammoniacal nitrogen removal (33.8% to 95.3%), total nitrogen removal (61.6% to 87.7%), total phosphate removal (66.4% to 88.7%), algal growth (149.3 mg algae·L−1 to 285.4 mg algae·L−1), and settleability (algae removal efficiency of 20.6% to 71.2%) compared with those of a PBR without moving media (SPBR). Although biomass uptake was the main mechanism for nutrient removal in the SPBR, both biomass uptake and denitrification were the main mechanisms in the PBR with moving media (MBPBR). The bacterial community also changed under the moving media condition. This study shows that moving media might be an essential parameter for PBRs with a short HRT to enhance nutrient removal and settleability.

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5

Kang, Donghan, and Keugtae Kim. "Real Wastewater Treatment Using a Moving Bed and Wastewater-Borne Algal–Bacterial Consortia with a Short Hydraulic Retention Time." Processes 9, no. 1 (January 7, 2021): 116. http://dx.doi.org/10.3390/pr9010116.

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Algal–bacterial consortium is a promising technology, combined with wastewater treatment plants, because algae produce molecular oxygen for nitrification and organic removal and reduce carbon dioxide emissions. However, algal–bacterial consortia based on suspended growth require a relatively long hydraulic retention time (HRT) of 4 d to 6 d for removal of organic matter and nutrients. For the algal–bacterial consortia in a photobioreactor (PBR) containing a moving bed, the organic matter and nutrient removal and the community structure of algal–bacterial consortia were investigated to determine the performance under a relatively short HRT of 2.5 d. Moving media containing algal–bacterial consortia enhanced the photosynthetic oxygen concentration (0.2 mg dissolved oxygen (DO)·L−1 to 5.9 mg DO·L−1), biochemical oxygen demand removal (88.0% to 97.2%), ammoniacal nitrogen removal (33.8% to 95.3%), total nitrogen removal (61.6% to 87.7%), total phosphate removal (66.4% to 88.7%), algal growth (149.3 mg algae·L−1 to 285.4 mg algae·L−1), and settleability (algae removal efficiency of 20.6% to 71.2%) compared with those of a PBR without moving media (SPBR). Although biomass uptake was the main mechanism for nutrient removal in the SPBR, both biomass uptake and denitrification were the main mechanisms in the PBR with moving media (MBPBR). The bacterial community also changed under the moving media condition. This study shows that moving media might be an essential parameter for PBRs with a short HRT to enhance nutrient removal and settleability.

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6

Kuzuhara, M., K. Kim, and K. Hess. "Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors." IEEE Transactions on Electron Devices 36, no. 1 (January 1989): 118–23. http://dx.doi.org/10.1109/16.21190.

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7

Ketterson, A. A., and H. Morkoc. "GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations." IEEE Transactions on Electron Devices 33, no. 11 (November 1986): 1626–34. http://dx.doi.org/10.1109/t-ed.1986.22720.

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8

Cirlin, G. E., R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, I. P. Soshnikov, S. A. Kukushkin, L. Leandro, T. Kasama, and Nika Akopian. "AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates." Journal of Physics D: Applied Physics 50, no. 48 (November 8, 2017): 484003. http://dx.doi.org/10.1088/1361-6463/aa9169.

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9

Gai, Hongxing, Jun Deng, Jian Jun Li, Guang Di Shen, and Jianxin Chen. "Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells." Materials Science Forum 475-479 (January 2005): 1685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1685.

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According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.

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10

Terpitskiy, A. N., I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, and G. E. Cirlin. "MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012039. http://dx.doi.org/10.1088/1742-6596/2086/1/012039.

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Abstract Heterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1 peak corresponded to hexagonal phases of germanium.

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11

Mokerov, V. G., G. B. Galiev, J. Pozela, K. Pozela, and V. Juciene. "Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well." Semiconductors 36, no. 6 (June 2002): 674–78. http://dx.doi.org/10.1134/1.1485669.

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12

Fricke, K., H. L. Hartnagel, W. Y. Lee, and M. Schussler. "AlGaAs/GaAs/AlGaAs DHBT's for high-temperature stable circuits." IEEE Electron Device Letters 15, no. 3 (March 1994): 88–90. http://dx.doi.org/10.1109/55.285393.

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13

Zou, Nanzhi, K. A. Chao, and Yu M. Galperin. "Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures." Physical Review Letters 71, no. 11 (September 13, 1993): 1756–59. http://dx.doi.org/10.1103/physrevlett.71.1756.

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14

Uenishi, Y., H. Tanaka, and H. Ukita. "Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining." IEEE Transactions on Electron Devices 41, no. 10 (1994): 1778–83. http://dx.doi.org/10.1109/16.324588.

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15

Ou, H. J., A. A. Higgs, P. R. Perkes, and J. M. Cowley. "High spatial resolution microanalysis on the (200) nanodiffraction intensity to determine the Al concentration of AlGaAs-GaAs MQWS." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 232–33. http://dx.doi.org/10.1017/s0424820100153130.

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When a nano probe electron beam of 4Å in diameter is scanned from a GaAs layer to a AlGaAs layer on a cleaved AlGaAs-GaAs MQWS sample (with X = 0.75 of Al concentration for AlGaAs, as grown by MBE), a significant increase of the (200) nanodiffraction intensity can be observed in the [001] nanodiffraction patterns of AlGaAs, which indicates that the (200) intensity is sensitive to the Al content of AlGaAs. The appearance of the {200} nanodiffraction disc patterns of AlGaAs is best recognized with the four-way split (000) disc, as shown in Fig. 1(e), because the (000) disc overlaps with the four nearest {200} discs. This is expected in the simulated AlGaAs (X = 0.75) nanodiffraction pattern of Fig. 1(g). While both the experimental and simulated patterns of GaAs, as illustrated in Fig. 1(d) and (f), show almost no intensity of the {200} nanodiffraction patterns. From the previous studies, two conclusions are: (1) measurement of the (200) thickness contour position in AlGaAs layer can reflect the content of the absolute Al concentration for each AlGaAs layer and (2) for a uniform region of thickness less than 200Å, the local Al concentration. Al%j. of a small region within a AlGaAs layer can be determined by the formula Al%j = [l - ΔI200/I200)]· Al%, if the absolute Al concentration. Al%. and the ratio of the change of the (200) intensity, (ΔI200/I200), are known.

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16

Pentecost, Allan. "The ellipsoidal algal cell." Algological Studies 155 (September 3, 2019): 41–55. http://dx.doi.org/10.1127/algol_stud/2019/0283.

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17

Wang, Jian, and Jian Kang Liu. "Role of phosphorus cycling in algal metabolism and algal succession in Lake Donghu, China." Archiv für Hydrobiologie 120, no. 4 (February 21, 1991): 433–45. http://dx.doi.org/10.1127/archiv-hydrobiol/120/1991/433.

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18

Wasilewski, Z. R., M. M. Dion, D. J. Lockwood, P. Poole, R. W. Streater, and A. J. SpringThorpe. "Composition of AlGaAs." Journal of Applied Physics 81, no. 4 (February 15, 1997): 1683–94. http://dx.doi.org/10.1063/1.364012.

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19

Matsueda, H. "AlGaAs OEIC transmitters." Journal of Lightwave Technology 5, no. 10 (1987): 1382–90. http://dx.doi.org/10.1109/jlt.1987.1075427.

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20

Zhang, Jizhi, Neal G. Anderson, and Kei May Lau. "AlGaAs superlattice microcoolers." Applied Physics Letters 83, no. 2 (July 14, 2003): 374–76. http://dx.doi.org/10.1063/1.1591242.

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21

Radmer, Richard J. "Algal Diversity and Commercial Algal Products." BioScience 46, no. 4 (April 1996): 263–70. http://dx.doi.org/10.2307/1312833.

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22

Požela,, J., K. Požela,, A. Sužiedėlis,, V. Jucienė,, and V. Petkun. "Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures." Acta Physica Polonica A 113, no. 3 (March 2008): 989–92. http://dx.doi.org/10.12693/aphyspola.113.989.

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23

Ueda, Y., N. Hayama, and K. Honjo. "Submicron-square emitter AlGaAs/GaAs HBTs with AlGaAs hetero-guardring." IEEE Electron Device Letters 15, no. 2 (February 1994): 66–68. http://dx.doi.org/10.1109/55.285371.

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24

BÖsl, J., R. Bauer, H. Rauch, U. Penning, G. Weimann, and W. Schlapp. "Modelocking of AlGaAs laser diode by intracavity AlGaAs phase-modulator." Electronics Letters 25, no. 13 (1989): 864. http://dx.doi.org/10.1049/el:19890582.

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25

Bantien, F., and J. Weber. "Manganese luminescence in AlGaAs-alloys and AlGaAs/GaAs quantum wells." Solid State Communications 61, no. 7 (February 1987): 423–26. http://dx.doi.org/10.1016/0038-1098(87)90131-1.

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26

Makiyama, K., K. Kasai, T. Ohori, and J. Komeno. "Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells." Semiconductor Science and Technology 7, no. 3B (March 1, 1992): B248—B250. http://dx.doi.org/10.1088/0268-1242/7/3b/059.

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27

Karpińska, K., M. Godlewski, Z. R. Żytkiewicz, W. M. Chen, and E. R. Weber. "AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures." Acta Physica Polonica A 82, no. 4 (October 1992): 713–16. http://dx.doi.org/10.12693/aphyspola.82.713.

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28

van Hall, P. J., and E. A. E. Zwaal. "Impact ionisation in the AlGaAs layer of GaAs/AlGaAs heterojunctions." Superlattices and Microstructures 13, no. 3 (April 1993): 323. http://dx.doi.org/10.1006/spmi.1993.1064.

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29

Alamkan, Jocelyn, Henri Happy, Yvon Cordier, and Alain Cappy. "Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach." European Transactions on Telecommunications 1, no. 4 (July 1990): 429–32. http://dx.doi.org/10.1002/ett.4460010410.

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30

Shoji, Yasushi, Ryo Tamaki, and Yoshitaka Okada. "Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells." Nanomaterials 11, no. 2 (January 29, 2021): 344. http://dx.doi.org/10.3390/nano11020344.

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From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

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31

Kang, Byung-Sub, Kie-Moon Song, and Haeng-Ki Lee. "Ferromagnetism in Mn-doped Chalcopyrite AlGaAs₂ and (Al,Ga)As Semiconductors." Journal of the Korean Magnetics Society 30, no. 5 (October 31, 2020): 168–74. http://dx.doi.org/10.4283/jkms.2020.30.5.168.

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32

Vetrova, Natalia F., Evgeny V. Kuimov, Sergey A. Meshkov, and Vasily D. Shashurin. "ABOUT AlGaAs-HETEROSTRUCTURES CVC KINETICS SIMULATION." Radioelectronics. Nanosystems. Information Technologies 11, no. 3 (December 29, 2019): 299–306. http://dx.doi.org/10.17725/rensit.2019.11.299.

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33

Blokhin, E. E., A. S. Pashchenko, L. S. Lunin, S. N. Chebotarev, and D. L. Alfimova. "THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs." Science in the South of Russia 13, no. 1 (2017): 11–17. http://dx.doi.org/10.23885/2500-0640-2017-13-1-11-17.

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34

González Luque, M. ª. Ángeles. "Piccolomini, Enea Silvio, Tratado de la miseria de los cortesanos (Traducción de Diego López de Cortegana), edición crítica, introducción y notas de Nieves Algaba, Nueva York, IDEA, 2018, 191 pp., ISBN 978-1-938795-48-0." Revista de Literatura Medieval 32 (December 10, 2020): 313–17. http://dx.doi.org/10.37536/rlm.2020.32.0.83400.

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Reseña a Piccolomini, Enea Silvio, Tratado de la miseria de los cortesanos (Traducción de Diego López de Cortegana), edición crítica, introducción y notas de Nieves Algaba, Nueva York, IDEA, 2018, 191 pp., ISBN 978-1-938795-48-0.

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35

Gili, Valerio Flavio, Luca Carletti, Fares Chouchane, Guillaume Wang, Christian Ricolleau, Davide Rocco, Aristide Lemaître, et al. "Role of the substrate in monolithic AlGaAs nonlinear nanoantennas." Nanophotonics 7, no. 2 (June 24, 2017): 517–21. http://dx.doi.org/10.1515/nanoph-2017-0026.

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AbstractWe report the effect of the aluminum oxide substrate on the emission of monolithic AlGaAs-on-insulator nonlinear nanoantennas. By coupling nonlinear optical measurements with electron diffraction and microscopy observations, we find that the oxidation-induced stress causes negligible crystal deformation in the AlGaAs nanostructures and only plays a minor role in the polarization state of the harmonic field. This result highlights the reliability of the wet oxidation of thick AlGaAs optical substrates and further confirms the bulk χ(2) origin of second harmonic generation at 1.55 μm in these nanoantennas, paving the way for the development of AlGaAs-on-insulator monolithic metasurfaces.

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36

Melville, Duncan J. "Centroids of nilpotent lie algabras." Communications in Algebra 20, no. 12 (January 1992): 3649–82. http://dx.doi.org/10.1080/00927879208824533.

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37

Masuoka, Akira, and Yukio Doi. "Genaralization fo cleft comodule algabras." Communications in Algebra 20, no. 12 (January 1992): 3703–21. http://dx.doi.org/10.1080/00927879208824536.

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38

Гуляев, Д. В., Д. В. Дмитриев, Н. В. Фатеев, Д. Ю. Протасов, А. С. Кожухов, and К. С. Журавлев. "GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктуры для мощных полупроводниковых инфракрасных излучателей." Журнал технической физики 91, no. 11 (2021): 1727. http://dx.doi.org/10.21883/jtf.2021.11.51535.142-21.

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Определен внутренний квантовый выход люминесценции GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктур для инфракрасных светодиодов. Исследовано влияние ростовых условий гетероструктур, выращенных методом молекулярно-лучевой эпитаксии и пост-ростового отжига на квантовый выход гетероструктур. Показано, что совокупной оптимизацией данных процессов удается повысить квантовый выход люминесценции исследуемых гетероструктур до 75-80% при умеренной мощности накачки. Ключевые слова: гетероструктуры, кельвиновская зондовая микроскопия, молекулярно-лучевая эпитаксия.

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39

Saysset, N., C. Maneux, N. Labat, A. Touboul, Y. Danto, and J. M. Dumas. "LF Excess Noise of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs." Journal de Physique III 5, no. 5 (May 1995): 509–17. http://dx.doi.org/10.1051/jp3:1995134.

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40

Christanell, R., and R. A. Höpfel. "Time‐resolved luminescence from the AlGaAs layer of AlGaAs/GaAs heterostructures." Journal of Applied Physics 66, no. 10 (November 15, 1989): 4827–31. http://dx.doi.org/10.1063/1.343798.

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41

Timmons, M. L., T. S. Colpitts, R. Venkatasubramanian, B. M. Keyes, D. J. Dunlavy, and R. K. Ahrenkiel. "Measurement of AlGaAs/AlGaAs interface recombination velocities using time‐resolved photoluminescence." Applied Physics Letters 56, no. 19 (May 7, 1990): 1850–52. http://dx.doi.org/10.1063/1.103066.

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42

Hartmann, A., Ch Dieker, M. Hollfelder, H. Hardtdegen, A. Förster, and H. Lüth. "Spontaneous formation of a tilted AlGaAs/GaAs superlattice during AlGaAs growth." Applied Surface Science 123-124 (January 1998): 704–9. http://dx.doi.org/10.1016/s0169-4332(97)00533-3.

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43

Miyatsuji, K., H. Hihara, and C. Hamaguchi. "Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures." Superlattices and Microstructures 1, no. 1 (January 1985): 43–47. http://dx.doi.org/10.1016/0749-6036(85)90027-8.

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44

Makiyama, K., M. Inoue, M. Ashida, Y. Cho, Y. Iwai, S. Sasa, and S. Hiyamizu. "Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells." Solid-State Electronics 31, no. 3-4 (March 1988): 371–74. http://dx.doi.org/10.1016/0038-1101(88)90299-7.

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45

Anwar, A. F. M., and Kuo-Wei Liu. "Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs." Solid-State Electronics 37, no. 9 (September 1994): 1585–88. http://dx.doi.org/10.1016/0038-1101(94)90038-8.

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46

Gray, M. L., J. D. Yoder, and A. D. Brotman. "Sidegating characteristics of AlGaAs/GaAs heterostructures with varied AlGaAs spacer layers." Journal of Applied Physics 69, no. 2 (January 15, 1991): 830–35. http://dx.doi.org/10.1063/1.347317.

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Tomizawa, M., T. Furuta, K. Yokoyama, and A. Yoshii. "Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures." IEEE Transactions on Electron Devices 36, no. 11 (November 1989): 2380–85. http://dx.doi.org/10.1109/16.43657.

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Fujii, N., T. Kimura, M. Tsugami, T. Sonoda, S. Takamiya, and S. Mitsui. "Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures." Journal of Crystal Growth 145, no. 1-4 (December 1994): 808–12. http://dx.doi.org/10.1016/0022-0248(94)91146-0.

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Chang, L. B., K. Y. Cheng, and C. C. Liu. "The cross contamination problem in AlGaAs/InGaP/AlGaAs liquid phase epitaxy." Crystal Research and Technology 24, no. 12 (December 1989): K213—K218. http://dx.doi.org/10.1002/crat.2170241224.

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van der Steen, P., A. Brenner, Y. Shabtai, and G. Oron. "Improved fecal coliform decay in integrated duckweed and algal ponds." Water Science and Technology 42, no. 10-11 (November 1, 2000): 363–70. http://dx.doi.org/10.2166/wst.2000.0682.

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Abstract:

Algal growth in wastewater ponds has two contradicting effects on fecal coliforms (FC) decay. On the one hand, algal photosynthesis increases the FC decay due to increased pH and DO. However, on the other hand, attenuation of solar radiation by algal matter reduces the decay rate. It was therefore investigated if suppressing algal development could enhance the FC removal efficiency. Limiting the algal growth was accomplished by inserting duckweed ponds in between a series of algal ponds. Duckweed ponds are modified stabilization ponds, covered with a mat of small floating plants, that are known to remove algal from algal pond effluent. The FC decay in a series of five shallow algal ponds was compared to FC decay in an integrated system of algal and duckweed ponds. The integrated system consisted of five mini-ponds (30 cm depth) in series: duckweed pond – algal pond – duckweed pond – algal pond – duckweed pond. The environmental factors that are known to affect FC decay were monitored and related to FC decay rates. In the algal ponds of the conventional system the light attenuation by algal matter became rate-limiting for the FC decay. In the integrated system, the algal concentration in the algal ponds was reduced by the intermediary duckweed ponds. This was shown to increase the FC decay in the algal ponds of the integrated system considerably, compared to the FC decay in the algal ponds of the conventional system. An improved system of duckweed and algal ponds is proposed, that is expected to reduce significantly the area requirements of pond systems.

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