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Journal articles on the topic '(AIGa)N quantum dots'

Author: Grafiati

Published: 29 March 2025

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1

Barettin, Daniele, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, and Nikolay Cherkashin. "Electromechanically Coupled III-N Quantum Dots." Nanomaterials 13, no. 2 (January 5, 2023): 241. http://dx.doi.org/10.3390/nano13020241.

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We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantum dots (QDs). The laterally inhomogeneous vertical out-diffusion of In atoms during growth interruption is the basic mechanism for the formation of InGaN islands within as-deposited 2D layers. An anisotropic 3D strain field created in the first layer is sufficient to justify the vertical correlation of the islands formed in the upper layers spaced by a sufficiently thin GaN layer. When the thickness of a GaN spacer exceeds 1 nm, QDs from different layers under the same growth conditions emit independently and in the same wavelength range. When extremely thin (less than 1 nm), a GaN spacer is formed solely by applying short GI, and a double wavelength emission in the blue and green spectral ranges evidences the electromechanical coupling. With k→·p→ calculations including electromechanical fields, we model the optoelectronic properties of a structure with three InGaN lens-shaped QDs embedded in a GaN matrix, with three different configurations of In content. The profiles of the band structures are strongly dependent on the In content arrangement, and the quantum-confined Stark effect is significantly reduced in a structure with an increasing gradient of In content from the top to the bottom QD. This configuration exhibits carrier tunneling through the QDs, an increase of wave functions overlap, and evidence emerges of three distinct peaks in the spectral range.

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2

Huault, Thomas, Julien Brault, Franck Natali, Benjamin Damilano, Denis Lefebvre, Rabih Tauk, Mathieu Leroux, and Jean Massies. "GaN/Al0.5 Ga0.5 N quantum dots and quantum dashes." physica status solidi (b) 246, no. 4 (January 15, 2009): 842–45. http://dx.doi.org/10.1002/pssb.200880614.

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3

Roy, Santanu, Christopher Tuinenga, Fadzai Fungura, Pinar Dagtepe, Viktor Chikan, and Jacek Jasinski. "Progress toward Producing n-Type CdSe Quantum Dots: Tin and Indium Doped CdSe Quantum Dots." Journal of Physical Chemistry C 113, no. 30 (July 2009): 13008–15. http://dx.doi.org/10.1021/jp8113946.

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4

Gu, Siyong, Chien-Te Hsieh, Yasser Ashraf Gandomi, Jianlin Li, Xing Xing Yue, and Jeng-Kuei Chang. "Tailoring fluorescence emissions, quantum yields, and white light emitting from nitrogen-doped graphene and carbon nitride quantum dots." Nanoscale 11, no. 35 (2019): 16553–61. http://dx.doi.org/10.1039/c9nr05422g.

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Highly fluorescent N-doped graphene quantum dots (NGQDs) and graphitic carbon nitride quantum dots (CNQDs, g-C₃N₄) were synthesized using a solid-phase microwave-assisted (SPMA) technique.

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5

Jeong, Kwang Seob, Zhiyou Deng, Sean Keuleyan, Heng Liu, and Philippe Guyot-Sionnest. "Air-Stable n-Doped Colloidal HgS Quantum Dots." Journal of Physical Chemistry Letters 5, no. 7 (March 19, 2014): 1139–43. http://dx.doi.org/10.1021/jz500436x.

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6

McCarthy, S. A., J. B. Wang, and P. C. Abbott. "Electronic structure calculation for N-electron quantum dots." Computer Physics Communications 141, no. 1 (November 2001): 175–204. http://dx.doi.org/10.1016/s0010-4655(01)00401-5.

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7

Naik, M. Jaya Prakash, Sourajit Mohanta, Peetam Mandal, and Mitali Saha. "N-Doped Graphene Quantum Dots Using Different Bases." International Journal of Nanoscience 18, no. 01 (January 24, 2019): 1850017. http://dx.doi.org/10.1142/s0219581x18500175.

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Photoluminescent graphene quantum dots (GQDs) have received tremendous attention due to their sui generis chemical, electronic and optical properties but fabricating the pristine quality of GQD is extremely challenging. Herein, we have reported the pyrolysis of citric acid which in the presence of different bases viz. triethylamine, ammonium hydroxide and urea, produced N-doped GQDs at different pH. The effect of different pH has been studied in detail to optimize the formation conditions of the GQD. Ultraviolet–visible (UV–Vis) spectroscopy and normalized fluorescence spectra were applied to analyze the optical properties of the GQD. The mean particle size was analyzed by a particle size analyzer (dynamic light dispersion).

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8

Shiralizadeh Dezfuli, Amin, Elmira Kohan, Sepand Tehrani Fateh, Neda Alimirzaei, Hamidreza Arzaghi, and Michael R. Hamblin. "Organic dots (O-dots) for theranostic applications: preparation and surface engineering." RSC Advances 11, no. 4 (2021): 2253–91. http://dx.doi.org/10.1039/d0ra08041a.

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Organic dots is a term used to represent materials including graphene quantum dots and carbon quantum dots because they rely on the presence of other atoms (O, H, and N) for their photoluminescence or fluorescence properties. Cargo delivery, bio-imaging, photodynamic therapy and photothermal therapy are major biomedical applications of organic dots.

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9

Mansur, Herman S., Alexandra A. P. Mansur, Elisabete Curti, and Mauro V. De Almeida. "Bioconjugation of quantum-dots with chitosan and N,N,N-trimethyl chitosan." Carbohydrate Polymers 90, no. 1 (September 2012): 189–96. http://dx.doi.org/10.1016/j.carbpol.2012.05.022.

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10

Zhang, Lin Lin, Jia Huan Wu, Chun Hui Shi, and Yu Guang Lv. "Preparation of Cadmium Telluride Quantum Dots Modified by Thioglycolic Acid." Key Engineering Materials 915 (March 29, 2022): 95–100. http://dx.doi.org/10.4028/p-m485h7.

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A CdTe quantum dot modified with thioglycolic acid as stabilizer was prepared. The structure of CdTe quantum dots was characterized by IR, UV and fluorescence spectra, transmission electron microscopy (TEM) scanning and X-ray diffraction (XRD). The effects of reactants, temperature, time and PH on the luminescence properties of the quantum dots were investigated. It is found that the quantum dots have strong fluorescence intensity. The synthesized QDS have small and uniform particle size and high crystallinity. The optimum conditions were determined as follows: n (Cd2+): n (Te2-): n (TGA) = 2:1:4, heating temperature 140°C, reaction time 60min, pH 11.

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11

Li, Junyao, Xiaofeng Liu, Lingyun Wan, Xinming Qin, Wei Hu, and Jinlong Yang. "Mixed magnetic edge states in graphene quantum dots." Multifunctional Materials 5, no. 1 (January 10, 2022): 014001. http://dx.doi.org/10.1088/2399-7532/ac44fe.

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Abstract Graphene quantum dots (GQDs) exhibit abundant magnetic edge states with promising applications in spintronics. Hexagonal zigzag GQDs possess a ground state with an antiferromagnetic (AFM) inter-edge coupling, followed by a metastable state with ferromagnetic (FM) inter-edge coupling. By analyzing the Hubbard model and performing large-scale spin-polarized density functional theory calculations containing thousands of atoms, we predict a series of new mixed magnetic edge states of GQDs arising from the size effect, namely mix-n, where n is the number of spin arrangement parts at each edge, with parallel spin in the same part and anti-parallel spin between adjacent parts. In particular, we demonstrate that the mix-2 state of bare GQDs (C 6 N 2 ) appears when N ⩾ 4 and the mix-3 state appears when N ⩾ 6 , where N is the number of six-membered-ring at each edge, while the mix-2 and mix-3 magnetic states appear in the hydrogenated GQDs with N = 13 and N = 15, respectively.

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12

Wang, Congxu, Youyi Sun, Jianli Jin, Zhiyuan Xiong, Dan Li, Junru Yao, and Yaqing Liu. "Highly selective, rapid-functioning and sensitive fluorescent test paper based on graphene quantum dots for on-line detection of metal ions." Analytical Methods 10, no. 10 (2018): 1163–71. http://dx.doi.org/10.1039/c7ay02995k.

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13

Huang, Jia Jia, Min Zhi Rong, and Ming Qiu Zhang. "Preparation of graphene oxide and polymer-like quantum dots and their one- and two-photon induced fluorescence properties." Physical Chemistry Chemical Physics 18, no. 6 (2016): 4800–4806. http://dx.doi.org/10.1039/c5cp06582h.

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14

Lv, Yuguang, Yuqing Cheng, Kuilin Lv, Guoliang Zhang, and Jiang Wu. "Felodipine Determination by a CdTe Quantum Dot-Based Fluorescent Probe." Micromachines 13, no. 5 (May 18, 2022): 788. http://dx.doi.org/10.3390/mi13050788.

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In this work, a CdTe quantum dot-based fluorescent probe was synthesized to determine felodipine (FEL). The synthesis conditions, structure, and interaction conditions with FEL of CdTe quantum dots were analysed by fluorescence spectrophotometry, Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), UV–visible spectroscopy, and TEM. The CdTe QD concentration was 2.0 × 10−4 mol/L. The amount of quantum dots controlled in the experiment was 0.8 mL. The controlled feeding ratio of N (Cd2+):N (Te2−):N (TGA) was 2:1:4, the heating temperature was 140 °C, the heating time was 60 min, and the pH of the QD precursor was adjusted to 11 for subsequent experiments. The UV–visible spectrum showed that the emission wavelength of CdTe quantum dots at 545 nm was the strongest and symmetric. The particle size of the synthesized quantum dots was approximately 5 nm. In the interaction of CdTe quantum dots with FEL, the FEL dosage was 1.0 mL, the optimal pH value of Tris-HCl buffer was 8.2, the amount of buffer was 1.5 mL, and the reaction time was 20 min. The standard curve of FEL was determined under the optimal synthesis conditions of CdTe quantum dots and reaction of CdTe quantum dots with FEL. The linear equation was Y = 3.9448x + 50.068, the correlation coefficient R2 was 0.9986, and the linear range was 5 × 10−6–1.1 × 10−4 mol/L. A CdTe quantum dot-based fluorescent probe was successfully constructed and could be used to determine the FEL tablet content.

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15

HUANG, DAMING, MICHAEL A. RESHCHIKOV, and HADIS MORKOÇ. "GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS." International Journal of High Speed Electronics and Systems 12, no. 01 (March 2002): 79–110. http://dx.doi.org/10.1142/s0129156402001137.

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This article reviews the advances in the growth of III-nitride quantum dots achieved in the last few years and their unique properties. The growth techniques and the strcutural and optical properties associated with quantum confinement, strain, and polarization in GaN/Al x Ga 1-x N and In x Ga 1-x N/GaN quantum dots are discussed in detail.

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16

Veljković, Dj, M. Tadić, and F. M. Peeters. "Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots." Materials Science Forum 494 (September 2005): 37–42. http://dx.doi.org/10.4028/www.scientific.net/msf.494.37.

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The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.

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17

Ma, Lin, Muhammad Sajid, Pingping Liu, Na Na, Dacheng He, Xueyuan Xiao, and Jin Ouyang. "Effects of N,N,N′,N′-tetramethylethylenediamine on the properties of CdTe quantum dots." Journal of Materials Chemistry 21, no. 35 (2011): 13299. http://dx.doi.org/10.1039/c1jm11446h.

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18

Pillar-Little, Timothy, and Doo Young Kim. "Differentiating the impact of nitrogen chemical states on optical properties of nitrogen-doped graphene quantum dots." RSC Adv. 7, no. 76 (2017): 48263–67. http://dx.doi.org/10.1039/c7ra09252k.

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The optical properties of top-down synthesized oxidized graphene quantum dots (ox-GQDs) and nitrogen-incorporating graphene quantum dots (N-GQDs) along a range of hydrothermal treatment temperatures were observed.

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19

Ou, Shih-Fu, Ya-Yun Zheng, Sin-Jen Lee, Shyi-Tien Chen, Chien-Hui Wu, Chien-Te Hsieh, Ruey-Shin Juang, Pei-Zhen Peng, and Yi-Huang Hsueh. "N-Doped Carbon Quantum Dots as Fluorescent Bioimaging Agents." Crystals 11, no. 7 (July 6, 2021): 789. http://dx.doi.org/10.3390/cryst11070789.

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Graphene quantum dots, carbon nanomaterials with excellent fluorescence characteristics, are advantageous for use in biological systems owing to their small size, non-toxicity, and biocompatibility. We used the hydrothermal method to prepare functional N-doped carbon quantum dots (N-CQDs) from 1,3,6-trinitropyrene and analyzed their ability to fluorescently stain various bacteria. Our results showed that N-CQDs stain the cell septa and membrane of the Gram-negative bacteria Escherichia coli, Salmonellaenteritidis, and Vibrio parahaemolyticus and the Gram-positive bacteria Bacillus subtilis, Listeria monocytogenes, and Staphylococcus aureus. The optimal concentration of N-CQDs was approximately 500 ppm for Gram-negative bacteria and 1000 ppm for Gram-positive bacteria, and the exposure times varied with bacteria. N-Doped carbon quantum dots have better light stability and higher photobleaching resistance than the commercially available FM4-64. When excited at two different wavelengths, N-CQDs can emit light of both red and green wavelengths, making them ideal for bioimaging. They can also specifically stain Gram-positive and Gram-negative bacterial cell membranes. We developed an inexpensive, relatively easy, and bio-friendly method to synthesize an N-CQD composite. Additionally, they can serve as a universal bacterial membrane-staining dye, with better photobleaching resistance than commercial dyes.

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20

Sauvage, S., P. Boucaud, F. H. Julien, J. M. Gérard, and V. Thierry-Mieg. "Intraband absorption in n-doped InAs/GaAs quantum dots." Applied Physics Letters 71, no. 19 (November 10, 1997): 2785–87. http://dx.doi.org/10.1063/1.120133.

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21

Saidi, Wissam A. "Oxygen Reduction Electrocatalysis Using N-Doped Graphene Quantum-Dots." Journal of Physical Chemistry Letters 4, no. 23 (November 22, 2013): 4160–65. http://dx.doi.org/10.1021/jz402090d.

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22

Elmaghraoui, D., M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, and J. Martinez-Pastor. "Excitonic complexes in GaN/(Al,Ga)N quantum dots." Journal of Physics: Condensed Matter 29, no. 10 (February 1, 2017): 105302. http://dx.doi.org/10.1088/1361-648x/aa57d5.

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23

Schumann, O., L. Geelhaar, H. Riechert, H. Cerva, and G. Abstreiter. "Morphology and optical properties of InAs(N) quantum dots." Journal of Applied Physics 96, no. 5 (September 2004): 2832–40. http://dx.doi.org/10.1063/1.1775050.

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24

Shangguan, W. Z., T. C. Au Yeung, and Y. B. Yu. "Electronic transport through N quantum dots under DC bias." Physica B: Condensed Matter 308-310 (December 2001): 1117–20. http://dx.doi.org/10.1016/s0921-4526(01)00902-4.

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25

Brault, Julien, Samuel Matta, Thi-Huong Ngo, Daniel Rosales, Mathieu Leroux, Benjamin Damilano, Mohamed Al Khalfioui, et al. "Ultraviolet light emitting diodes using III-N quantum dots." Materials Science in Semiconductor Processing 55 (November 2016): 95–101. http://dx.doi.org/10.1016/j.mssp.2016.02.014.

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26

Melnychuk, Christopher, and Philippe Guyot-Sionnest. "Auger Suppression in n-Type HgSe Colloidal Quantum Dots." ACS Nano 13, no. 9 (August 22, 2019): 10512–19. http://dx.doi.org/10.1021/acsnano.9b04608.

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27

Chang, Woo Je, Kyu-Young Park, Yizhou Zhu, Christopher Wolverton, Mark C. Hersam, and Emily A. Weiss. "n-Doping of Quantum Dots by Lithium Ion Intercalation." ACS Applied Materials & Interfaces 12, no. 32 (July 15, 2020): 36523–29. http://dx.doi.org/10.1021/acsami.0c09366.

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28

Sergent, S., J. C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, et al. "GaN quantum dots in (Al,Ga)N-based Microdisks." Journal of Physics: Conference Series 210 (February 1, 2010): 012005. http://dx.doi.org/10.1088/1742-6596/210/1/012005.

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29

Daugherty, Michael C., Siyong Gu, Doug S. Aaron, Ryan E. Kelly, Yasser Ashraf Gandomi, and Chien-Te Hsieh. "Graphene quantum dot-decorated carbon electrodes for energy storage in vanadium redox flow batteries." Nanoscale 12, no. 14 (2020): 7834–42. http://dx.doi.org/10.1039/d0nr00188k.

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30

Ibrayev, N. Kh. "SPECTRAL AND LUMINESCENT PROPERTIES OF CARBON QUANTUM DOTS FUNCTIONALIZED WITH N- AND S-CONTAINING GROUPS." Eurasian Physical Technical Journal 18, no. 2 (June 11, 2021): 12–17. http://dx.doi.org/10.31489/2021no2/12-17.

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In the presented work, carbon quantum dots were obtained by microwave synthesis based on citric acid and Lcysteine. The resulting particles were characterized by electron and probe microscopy, dynamic light scattering and Fourier transform infrared spectroscopy. The spectral and luminescent properties were investigated for the initial solution of carbon quantum dots, as well as solutions obtained as a result of dialysis of the synthesized product. It is shown that all samples exhibit the same optical properties. At the same time, the measurement of quantum yields showed that carbon dots that have passed through the dialysis membrane have the best fluorescent ability.

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31

Lee, Kyu Seung, Jaeho Shim, Hyunbok Lee, Sang-Youp Yim, Basavaraj Angadi, Byungkwon Lim, and Dong Ick Son. "Unveiling the composite structures of emissive consolidated p–i–n junction nanocells for white light emission." Nanoscale 10, no. 29 (2018): 13867–74. http://dx.doi.org/10.1039/c8nr01842a.

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Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)–i(RGB quantum dots)–n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence.

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32

Zhukov A. E., Kryzhanovskaya N. V., Makhov I. S., Moiseev E. I., Nadtochiy A. M., Fominykh N. A., Mintairov S. A., Kalyuzhyy N. A., Zubov F. I., and Maximov M. V. "Model for speed performance of quantum-dot waveguide photodiode." Semiconductors 57, no. 3 (2023): 211. http://dx.doi.org/10.21883/sc.2023.03.56238.4783.

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A model is proposed that makes it possible to analytically analyze the speed performance of a waveguide p-i-n photodiode with a light-absorbing region representing a multilayered array of quantum dots separated by undoped spacers. It is shown that there is an optimal number of layers of quantum dots, as well as an optimal thickness of the spacers, which provide the widest bandwidth. The possibility of achieving a frequency range (at the level of -3 dB) above 20 GHz for waveguide photodiodes based on InGaAs/GaAs quantum well-dots is shown Keywords: photodiode, quantum dots, speed.

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33

Khanna, P. K., R. Gokhale, and V. V. V. S. Subbarao. "Stable light emission from cadmium sulphide quantum dots in N,N′-dimethylformamide." Materials Letters 57, no. 16-17 (May 2003): 2489–93. http://dx.doi.org/10.1016/s0167-577x(02)01299-5.

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34

Zhao, Ping, Bo Jin, Qingchun Zhang, and Rufang Peng. "Facile synthesis of quantum dots/TiO2 photocatalyst with superior photocatalytic activity: the effect of carbon nitride quantum dots and N-doped carbon dots." Research on Chemical Intermediates 47, no. 12 (October 18, 2021): 5229–47. http://dx.doi.org/10.1007/s11164-021-04595-4.

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35

Qiu, Jijun, Binbin Weng, Lance L. McDowell, and Zhisheng Shi. "Low-cost uncooled MWIR PbSe quantum dots photodiodes." RSC Advances 9, no. 72 (2019): 42516–23. http://dx.doi.org/10.1039/c9ra07664f.

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36

Hao, Ya-Nan, Hui-Lin Guo, Lei Tian, and Xiaofeng Kang. "Enhanced photoluminescence of pyrrolic-nitrogen enriched graphene quantum dots." RSC Advances 5, no. 54 (2015): 43750–55. http://dx.doi.org/10.1039/c5ra07745a.

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Nitrogen-doped graphene quantum dots (N-GQDs) are prepared through hydrothermal methods using GQDs as precursors and urea as dopants. The enhanced photoluminescent properties are attributed to the formation of the pyrrolic-N rings in GQDs domains.

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37

Wang, Zhen, Zhaosheng Hu, Muhammad Akmal Kamarudin, Gaurav Kapil, Atul Tripathi, Qing Shen, Kenji Yoshino, Takashi Minemoto, Sham S. Pandey, and Shuzi Hayase. "Enhancement of charge transport in quantum dots solar cells by N-butylamine-assisted sulfur-crosslinking of PbS quantum dots." Solar Energy 174 (November 2018): 399–408. http://dx.doi.org/10.1016/j.solener.2018.09.026.

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38

Zhang, Shu, Xibo Pei, Yiyuan Xue, Jingyuan Xiong, and Jian Wang. "Bio-safety assessment of carbon quantum dots, N-doped and folic acid modified carbon quantum dots: A systemic comparison." Chinese Chemical Letters 31, no. 6 (June 2020): 1654–59. http://dx.doi.org/10.1016/j.cclet.2019.09.018.

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39

YANG, LIJU, and YANBIN LI. "Quantum Dots as Fluorescent Labels for Quantitative Detection of Salmonella Typhimurium in Chicken Carcass Wash Water." Journal of Food Protection 68, no. 6 (June 1, 2005): 1241–45. http://dx.doi.org/10.4315/0362-028x-68.6.1241.

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Fluorescent semiconductor quantum dots have recently emerged as a novel and promising class of fluorescent labels for biological detection. In this study, quantum dots were used as fluorescent labels in immunoassays for quantitative detection of foodborne pathogenic bacteria. Salmonella Typhimurium cells were separated from chicken carcass wash water using anti-Salmonella antibody coated magnetic beads and reacted to secondary biotin-labeled anti-Salmonella antibody. Quantum dots coated with streptavidin were added to react with biotin on the secondary antibody. Measurement of the intensity of fluorescence produced by quantum dots provided a quantitative method for microbial detection. A linear relationship between Salmonella Typhimurium cell number (log N) in the samples of chicken carcass wash water and the fluorescence intensity (FI) was found for the cell numbers ranging from 103 to 107 CFU/ml. The regression model can be expressed as FI = 198.6 Log N − 639.03 with R2 = 0.96. The detection limit of this method was 103 CFU/ml.

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40

Shrivastava, Keshav N. "Quantum Hall Effect in AlGaAs and Graphite Quantum Dots." Advanced Materials Research 667 (March 2013): 1–9. http://dx.doi.org/10.4028/www.scientific.net/amr.667.1.

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Abstract. The 30 nm wide quantum wells on a 4x4 mm2 piece of GaAs/AlGaAs are formed when the layers of GaAs are deposited on AlGaAs films. The two-dimensional density of electrons is 3x1011 cm-2 and the mobility is 32x106 cm2/Vs. In such a sample the Hall resistivity as a function of magnetic field is not a linear function. Hence a suitable theory to understand the Hall effect is formulated. We find that there are phase transitions as a function of temperature. There are lots of fractions of charge which are explained on the basis of spin and orbital angular momentum of the electron. The nano meter size films of graphite also show that the Hall resistivity is non-linear and shows steps as a function of magnetic field. We make an effort to understand the steps in the Hall effect resistivity of graphite with quantum wells formed on the surface. It is found that the fractions are in four categories, (i) the principal fractions which are determined by spin and orbital angular momenta, (ii) the resonances which occur at the difference between two values such as =1-2, (iii) two-particle states which occur at the sum of the two frequencies and (iv) there are clusters of electrons localized in some areas of the sample. The spin in the clusters is polarized so that it becomes NS which is not 1/2 but depends on the number N, of electrons in a cluster.

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41

Shi, Chong, and Xian-Yong Wei. "Microwave-Assisted Grafting of Coal onto Nitrogen-Doped Carbon Dots with a High Quantum Yield and Enhanced Photoluminescence Properties." Molecules 29, no. 6 (March 18, 2024): 1349. http://dx.doi.org/10.3390/molecules29061349.

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The fluorescent nitrogen-doped carbon dots (N-CDs) were synthesized via a facile one-pot solvothermal process using coal (Jin 15 Anthracite and Shaerhu lignite) as raw materials and dimethyl formamide (DMF) as the solvent, employing a microwave pyrolysis method. This approach demonstrates remarkable efficacy in the development of nitrogen-doped carbon dots (N-CDs) with a high quantum yield (QY). The N-CDs prepared have strong photoluminescence properties. Moreover, the obtained N-CDs emit blue PL and are easily dispersed in polymethyl methacrylate (PMMA), preserving the inherent advantages of N-CDs and the PMMA matrix. The JN-CDs exhibit a high quantum yield (QY) of 49.5% and a production yield of 25.7%, respectively. In contrast, the SN-CDs demonstrate a quantum yield of 40% and a production yield of 35.1%. It is worth noting that the production yield and quantum yield of coal-based carbon dots are inversely related indices. The lower metamorphic degree of subbituminous coal favors an enhanced product yield, while the higher metamorphic degree of anthracite promotes an improved quantum yield in the product, which may be attributed to the presence of amorphous carbon within it. Consequently, we propose and discuss potential mechanisms underlying N-CD formation.

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42

Kryzhanovskaya N.V., Blokhin S.A., Makhov I. S., Moiseev E. I., Nadtochiy A. M., Fominykh N. A., Mintairov S. A., et al. "Investigation of a p-i-n photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots." Semiconductors 57, no. 3 (2023): 198. http://dx.doi.org/10.21883/sc.2023.03.56236.4727.

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Abstract:

The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 μm and a length of the absorbing region from 92 μm to 400 μm. A low dark current density (1.1 and 22 μA/cm2 at -1 and -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC-circuit, were obtained. Keywords:waveguide photodetector, modulation frequency, quantum well-dots, integrated photonics.

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43

Du, Liang, Neda Arabzadeh Nosratabad, Zhicheng Jin, Chengqi Zhang, Sisi Wang, Banghao Chen, and Hedi Mattoussi. "Luminescent Quantum Dots Stabilized by N-Heterocyclic Carbene Polymer Ligands." Journal of the American Chemical Society 143, no. 4 (January 15, 2021): 1873–84. http://dx.doi.org/10.1021/jacs.0c10592.

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Belyaev, A. E., S. A. Vitusevich, L. Eaves, P. C. Main, M. Henini, A. Forster, W. Reetz, and S. V. Danylyuk. "Photoresponse spectra in p-i-n diodes containing quantum dots." Nanotechnology 13, no. 1 (January 22, 2002): 94–96. http://dx.doi.org/10.1088/0957-4484/13/1/320.

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45

Lu, Haipeng, Gerard M. Carroll, Xihan Chen, Dinesh K. Amarasinghe, Nathan R. Neale, Elisa M. Miller, Peter C. Sercel, Federico A. Rabuffetti, Alexander L. Efros, and Matthew C. Beard. "n-Type PbSe Quantum Dots via Post-Synthetic Indium Doping." Journal of the American Chemical Society 140, no. 42 (September 26, 2018): 13753–63. http://dx.doi.org/10.1021/jacs.8b07910.

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46

Li, Ming, Wenbin Wu, Wencai Ren, Hui-Ming Cheng, Nujiang Tang, Wei Zhong, and Youwei Du. "Synthesis and upconversion luminescence of N-doped graphene quantum dots." Applied Physics Letters 101, no. 10 (September 3, 2012): 103107. http://dx.doi.org/10.1063/1.4750065.

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Cortez, S., A. Jbeli, X. Marie, O. Krebs, R. Ferreira, T. Amand, P. Voisin, and J. M. Gérard. "Spin polarization dynamics in n-doped InAs/GaAs quantum dots." Physica E: Low-dimensional Systems and Nanostructures 13, no. 2-4 (March 2002): 508–11. http://dx.doi.org/10.1016/s1386-9477(02)00181-9.

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Kong, Jing, Chongwu Zhou, Erhan Yenilmez, and Hongjie Dai. "Alkaline metal-doped n-type semiconducting nanotubes as quantum dots." Applied Physics Letters 77, no. 24 (December 11, 2000): 3977–79. http://dx.doi.org/10.1063/1.1331088.

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49

Ferguson, Andrew J., David G. Hasko, H. Ahmed, and David A. Williams. "Variable coupling in n-type silicon–germanium double quantum dots." Applied Physics Letters 82, no. 25 (June 23, 2003): 4492–94. http://dx.doi.org/10.1063/1.1577826.

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50

Syperek, M., R. Kudrawiec, M. Baranowski, G. Sȩk, J. Misiewicz, D. Bisping, B. Marquardt, A. Forchel, and M. Fischer. "Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well." Applied Physics Letters 96, no. 4 (January 25, 2010): 041911. http://dx.doi.org/10.1063/1.3299258.

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