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Journal articles on the topic 'Active semiconductors'

Author: Grafiati

Published: 19 October 2024

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1

Wang, Xuejiao, Erjin Zhang, Huimin Shi, Yufeng Tao, and Xudong Ren. "Semiconductor-based surface enhanced Raman scattering (SERS): from active materials to performance improvement." Analyst 147, no. 7 (2022): 1257–72. http://dx.doi.org/10.1039/d1an02165f.

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We review the recent progress in semiconductor-based SERS. We mainly discuss the enhancement mechanism, SERS-active materials for semiconductors, and potential strategies to improve the SERS performance.

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2

Cui, Can, Junqing Ma, Kai Chen, Xinjie Wang, Tao Sun, Qingpu Wang, Xijian Zhang, and Yifei Zhang. "Active and Programmable Metasurfaces with Semiconductor Materials and Devices." Crystals 13, no. 2 (February 6, 2023): 279. http://dx.doi.org/10.3390/cryst13020279.

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Active metasurfaces provide promising tunabilities to artificial meta−atoms with unnatural optical properties and have found important applications in dynamic cloaking, reconfigurable intelligent surfaces, etc. As the development of semiconductor technologies, electrically controlled metasurfaces with semiconductor materials and devices have become the most promising candidate for the dynamic and programmable applications due to the large modulation range, compact footprint, pixel−control capability, and small switching time. Here, a technical review of active and programmable metasurfaces is given in terms of semiconductors, which consists of metasurfaces with diodes, transistors, and newly rising semiconductor materials. Physical models, equivalent circuits, recent advances, and development trends are discussed collectively and critically. This review represents a broad introduction for readers just entering this interesting field and provides perspective and depth for those well−established.

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3

DUTA, ANCA, CRISTINA BOGATU, IOANA TISMANAR, DANA PERNIU, and MARIA COVEI. "VIS-ACTIVE PHOTOCATALYTIC COMPOSITES FOR ADVANCED WASTEWATER TREATEMENT." Journal of Engineering Sciences and Innovation 5, no. 3 (September 15, 2020): 247–52. http://dx.doi.org/10.56958/jesi.2020.5.3.5.

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Advanced wastewater treatment targeting water reuse is currently an important research topic and the heterogeneous photocatalysis processes represent potential candidates. Most of the photocatalysts are aqueously stable metal oxides as TiO2 or ZnO; however, their use is limited due to the processes costs as these oxides are wide bandgap semiconductors that are activated only by UV radiation. Many alternatives are investigated to develop VIS- or solar-active photocatalysts among which most effective proved to be the diode type composites that associate the n-type semiconductor (TiO2) with a p-type semiconductor with lower band gap as CZTS or CIS. The challenges raised in developing thin films photocatalysts of diode type are discussed considering the advanced treatment under VIS and simulated solar radiation of a wastewater polluted with methylene blue (standard pollutant). Further on, new composites of TiO2 – Graphene oxide are presented considering the same application

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4

Nguyen, Thien-Phap, Cédric Renaud, and Chun-Hao Huang. "Electrically Active Defects in Organic Semiconductors." Journal of the Korean Physical Society 52, no. 5 (May 15, 2008): 1550–53. http://dx.doi.org/10.3938/jkps.52.1550.

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5

Friend, R. H. "Conjugated polymers. New materials for optoelectronic devices." Pure and Applied Chemistry 73, no. 3 (January 1, 2001): 425–30. http://dx.doi.org/10.1351/pac200173030425.

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Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. We have worked on the development of the semiconductor physics of these materials by using them as the active components in a range of semiconductor devices. Polymer light-emitting diodes show particular promise, and recent developments in color range (red, green, and blue), efficiency (above 20 lumen/W for green emitters), and operating lifetime are discussed. Progress on their application to displays, with integration with active-matrix TFT drive, and with patterned deposition using inkjet printing techniques is also reviewed. The role played by interfaces between electrode and semiconducting polymer is also discussed.

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6

Sharma, Shweta, Rakshit Ameta, R. K. Malkani, and Suresh Ameta. "Photocatalytic degradation of rose Bengal by semiconducting zinc sulphide used as a photocatalyst." Journal of the Serbian Chemical Society 78, no. 6 (2013): 897–905. http://dx.doi.org/10.2298/jsc120716141s.

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Various semiconductors have been used as photocatalysts for removal of different dyes from their aqueous solutions. Zinc sulphide semiconductor is used in the present investigation as a photocatalyst for the removal of rose Bengal dye. Effect of different parameters, which affect the rate of reaction; like pH, concentration of dye, amount of semiconductor and light intensity have been studied. A mechanism has also been proposed in which hydroxyl radicals are shown as an active oxidizing species.

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7

Forrest, S. R. "Active optoelectronics using thin-film organic semiconductors." IEEE Journal of Selected Topics in Quantum Electronics 6, no. 6 (November 2000): 1072–83. http://dx.doi.org/10.1109/2944.902156.

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8

Kamiya, Toshio, and Masashi Kawasaki. "ZnO-Based Semiconductors as Building Blocks for Active Devices." MRS Bulletin 33, no. 11 (November 2008): 1061–66. http://dx.doi.org/10.1557/mrs2008.226.

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AbstractThis article provides a review of materials and devices of wide-bandgap oxide semiconductors based on ZnO, highlighting the nature of the chemical bond. The electronic structures of these materials are very different from those of conventional covalently bonded semiconductors, owing to the ionic nature of the chemical bonds. Therefore, one needs to design and optimize fabrication processes and structures of active devices containing such materials, taking into account the peculiar defect formation mechanisms. A variety of active devices that have clear advantages over the conventional ones have been demonstrated, for example, ultraviolet light-emitting diodes, quantum Hall devices, and transparent and flexible thin-film transistors with high electron mobility, paving the way for future applications. The reasons behind the successes identify future challenges in research on oxide semiconductors.

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9

Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

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Bakranova, Dina, Bekbolat Seitov, and Nurlan Bakranov. "Preparation and Photocatalytic/Photoelectrochemical Investigation of 2D ZnO/CdS Nanocomposites." ChemEngineering 6, no. 6 (November 9, 2022): 87. http://dx.doi.org/10.3390/chemengineering6060087.

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Properties of heterotructured semiconductors based on ZnO/CdS nanosheets are investigated for their possible application in photocatalytic and photoelectrochemical reactions. Semiconductor material is the main active coating of photoanodes, which triggers the half-reaction of water oxidation and reduction, which entails the purifying or splitting of water. This article explains nanocomposite assembly by convenient and simple methods. The study of the physicochemical properties of semiconductor layers is carried out using electron microscopy, X-ray diffractometry, and UV-visible spectroscopy. Studies of electrochemical properties are carried out by potential static methods in electrochemical cells.

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11

Mukerjee, Sanjeev, Benjamin William Kaufold, Parisa Nematollahi, Bernardo Barbiellini, Dirk Lamoen, Arun Bansil, and Sijia Dong. "(Invited) Fundamentals of Plasmon-Induced Charge Transfer in Semiconducting Materials: Showcasing OER Catalysis." ECS Meeting Abstracts MA2024-01, no. 35 (August 9, 2024): 1956. http://dx.doi.org/10.1149/ma2024-01351956mtgabs.

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Using Localized Surface Plasmon Resonance Effect for Enhancing Electrochemical reactions has been reported earlier both in terms of direct electron injection/transfer (DET) in outer-sphere reductive processes as well as charge injection into semiconductors via plasmon-induced resonant electron transfer processes (PIRE). While the former (DET) is mainly influenced by the lifetimes of the ejected hot electrons and their rapid cooling at the interface. For inner sphere reductive processes via the LSPR phenomenon, direct charge injection into the LUMO states of the adsorbed species is required. In this regard, it is imperative to distinguish between the inter-band charge transfer of the adsorbed species because of exposure to photons. In contrast to these charge injections into semiconductors via plasmon-induced resonant electron transfer processes (PIRE), they must be more understood and complex. In this presentation, we will use the well-known endothermic anodic oxygen evolution reaction (OER) in alkaline pH to showcase the fundamental aspects of charge injection and its effect on the hole-driven OER mechanism. For this well-known OER catalyst, layered double hydroxides of Ni with Fe and Co dopants will be used. The electrochemical enhancement of OER will be explained based on detailed structural motifs of the semiconductors, its band structure, and the resonance effect of Au induced by the LSPR effect. Direct and indirect bandgaps will be discussed in the context of three possible mechanisms: (i) Charge carriers are directly injected into the semiconductor via LSPR. The semiconductor's conduction band is usually (-0.1 to 0.0 eV vs. NHE), and the valence band is between (2.00 and 3.5 eV), corresponding to electron energy between -2.00 to 3.5 eV vs. NHE. For LSPR nanoparticles, SPR energy is between 1.0 and 4.0 eV. Also, the Fermi energy of LSPR is usually 0.0 vs. NHE. Hence, LSPR only enables energetic electrons to be transferred from metals to semiconductors. It is the interface between LSPR and the semiconductor which is important. Charge injection is more prevalent when metal LSPR is of lower energy than the semiconductor—direct electron transfer (DET). (ii) Transfer does not involve direct electron injection but via (a) near-field electromagnetic and (b) resonant photon scattering mechanism. This has been shown to work by adding a thin dielectric material between the LSPR and the semiconductor. This would be most likely in the case of OER, where surface-localized plasmons will be the most important determinant instead of recombination events in the bulk of the semiconductor. This is most important for OER as it depends on the surface hole concentration. It should be noted that larger nanoparticles (>50 nm) have increased resonant photon scattering. Such a mechanism is more prevalent when we overlap metal LSPR and semiconductor bands, leading to plasmon-induced resonant electron transfer (PIRET). (iii) When metal LSPR is in direct contact with the semiconductor, all three phenomena could be active.

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12

ABDUL RANI, ABDUL ISMAIL, Muhammad Afif Abdul Rani, Samat Iderus, Mohd Shahril Osman, and Nuramalina Bohari. "The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application." ASM Science Journal 17 (August 3, 2022): 1–6. http://dx.doi.org/10.32802/asmscj.2022.1127.

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This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen to be simulated in this research work. The thickness of SiGe and PTAA varies from 100 nm – 500 nm and 1000 rpm – 5000 rpm. The results show that the thickness of both semiconductor affects the electrical properties. Higher current density, Jsc, can be obtained as the thickness of SiGe increases. PTAA as an active layer had affected the value of open-circuit voltage, Voc. The SiGe combination with lower rpm depicted a higher value of Voc than the other combinations. The FF and efficiency rate of the solar panel is also presented in this work. This research focuses on the thickness combination of both semiconductors layer on the performance of its electrical characteristics.

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13

Štěpánek, Jan, Luboš Streit, and Tomáš Komrska. "Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications." TRANSACTIONS ON ELECTRICAL ENGINEERING 7, no. 1 (March 30, 2020): 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.

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The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.

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14

Zhang, Ziyang, Zhengran He, Kyeiwaa Asare-Yeboah, and Sheng Bi. "Organic Semiconductors with Benzoic Acid Based Additives for Solution- Processed Thin Film Transistors." Current Chinese Science 1, no. 3 (July 16, 2021): 306–14. http://dx.doi.org/10.2174/2210298101666210204161237.

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Background: although solution-processed small molecular organic semiconductors have attracted great attention for organic electronic applications, the intrinsic crystal misorientation of the organic semiconductors still remains a challenging issue. Objective: two benzoic acid-based additives, i.e. 4-propylbenzoic acid (RBA) and 4-octylbenzoic acid (OBA), were employed to regulate the crystal growth and charge transport of organic semiconductors. Methods: RBA and OBA were mixed with a π-conjugated organic semiconductor 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), respectively. Organic thin-film transistors (OTFTs) with different bottom-gate, top-contact and bottom-gate, bottom-contact configurations were fabricated to investigate charge transport. Results: RBA and OBA share a similar benzoic acid structure with the same hydrophilic head but differ in the length of the hydrophobic tail. The benzoic acid-based additive forms a stratified selfassembled interfacial layer and maneuvers nucleation seed distribution via synergetic interactions with the silanol groups on silicon dioxide and with the bulky side chains of the semiconductor. The TIPS pentacene film with OBA additive exhibited a 10-fold reduction in misorientation angle as compared to the counterpart with RBA. Conclusion: Distinct thin film morphology in terms of crystal alignment and grain width was observed and correlated to the hydrophobic tail length. In particular, OTFTs incorporating the TIPS pentacene/benzoic acid mixture as the active layer showed a mobility of up to 0.15 cm2/Vs.

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15

Gómez Rivas, J., M. Kuttge, H. Kurz, P. Haring Bolivar, and J. A. Sánchez-Gil. "Low-frequency active surface plasmon optics on semiconductors." Applied Physics Letters 88, no. 8 (February 20, 2006): 082106. http://dx.doi.org/10.1063/1.2177348.

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16

Justo, Joa~ao F., and Lucy V. C. Assali. "Electrically active centers in partial dislocations in semiconductors." Physica B: Condensed Matter 308-310 (December 2001): 489–92. http://dx.doi.org/10.1016/s0921-4526(01)00819-5.

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17

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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18

Hong, Jin, Siqi Gang, Fei Wang, and Guang Lu. "Preparation of ZnO-BiOCl Composite and its Visible-light Photocatalytic Degradation of RhB." Journal of Physics: Conference Series 2285, no. 1 (June 1, 2022): 012007. http://dx.doi.org/10.1088/1742-6596/2285/1/012007.

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Abstract The ZnO-BiOCl composite were prepared by a soft chemical method. And crystalline phase, morphology, optical property and photocatalytic efficiency of ZnO-BiOCl compound semiconductors were studied by XRD, SEM, DRS and RhB photodegradation under visible-light irradiation. The results showed that ZnO-BiOCl compound semiconductor was significantly more active than ZnO or BiOCl, since ZnO-BiOCl compound semiconductor may facilitate the transfer of charge carriers and retard the e--h+ recombination. Moreover, the photocatalytic degradation of RhB over ZnO-BiOCl composite sample is the highest, which is also caused by the combination of the photocatalytic performance of ZnO and the photosensitization performance of BiOCl.

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19

Singha Roy, Subhamoy. "On the Einstein relation between mobility and diffusion cofficint in an active Nanostructured Materials." Physics & Astronomy International Journal 7, no. 1 (February 3, 2023): 7–9. http://dx.doi.org/10.15406/paij.2023.07.00277.

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It is commonly known that the speed at which contemporary switching semiconductors work much depends on the carrier degeneracy of the band. Furthermore, the relation of the diffusivity to mobility ratio of the carriers in semiconductors (referred to as DMR) is very helpful because it is more accurate than any of the individual relations for diffusivity to mobility ratio, which is thought to be the two most frequently used parameters in carrier transport in semiconductors. With n-InSb and Hg1-xCdxTe as examples of numerical calculations, we will examine DMR under strong magnetic quantization of III-V in line with the three- and two-band models of Kane, respectively, along with parabolic energy bands.

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20

Noh, Hee, Joonwoo Kim, June-Seo Kim, Myoung-Jae Lee, and Hyeon-Jun Lee. "Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors." Crystals 9, no. 2 (January 31, 2019): 75. http://dx.doi.org/10.3390/cryst9020075.

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Hydrogen in oxide systems plays a very important role in determining the major physical characteristics of such systems. In this study, we investigated the effect of hydrogen in oxide host systems for various oxygen environments that acted as amorphous oxide semiconductors. The oxygen environment in the sample was controlled by the oxygen gas partial pressure in the radio-frequency-sputtering process. It was confirmed that the hydrogen introduced by the passivation layer not only acted as a “killer” of oxygen deficiencies but also as the “creator” of the defects depending on the density of oxide states. Even if hydrogen is not injected, its role can change owing to unintentionally injected hydrogen, which leads to conflicting results. We discuss herein the correlation with hydrogen in the oxide semiconductor with excess or lack of oxygen through device simulation and elemental analysis.

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21

Meraj, Sheikh Tanzim, Nor Zaihar Yahaya, Molla Shahadat Hossain Lipu, Jahedul Islam, Law Kah Haw, Kamrul Hasan, Md Sazal Miah, Shaheer Ansari, and Aini Hussain. "A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis." Micromachines 12, no. 12 (November 27, 2021): 1466. http://dx.doi.org/10.3390/mi12121466.

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In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the Ga2O3 switches are operated at a higher switching frequency. The proposed ANPC mitigates the fault current in the switching devices which are prevalent in conventional ANPCs. The proposed ANPC is developed by applying a specified modulation technique and an intelligent switching arrangement, which has further improved its performance by optimizing the loss distribution among the Si/Ga2O3 devices and thus effectively increases the overall efficiency of the inverter. It profoundly reduces the common mode current stress on the switches and thus generates a lower common-mode voltage on the output. It can also operate at a broad range of power factors. The paper extensively analyzed the switching performance of UWBG semiconductor (Ga2O3) devices using double pulse testing (DPT) and proper simulation results. The proposed inverter reduced the fault current to 52 A and achieved a maximum efficiency of 99.1%.

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22

Li, Nan, Yang Li, Zhe Cheng, Youdi Liu, Yahao Dai, Seounghun Kang, Songsong Li, et al. "Bioadhesive polymer semiconductors and transistors for intimate biointerfaces." Science 381, no. 6658 (August 11, 2023): 686–93. http://dx.doi.org/10.1126/science.adg8758.

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The use of bioelectronic devices relies on direct contact with soft biotissues. For transistor-type bioelectronic devices, the semiconductors that need to have direct interfacing with biotissues for effective signal transduction do not adhere well with wet tissues, thereby limiting the stability and conformability at the interface. We report a bioadhesive polymer semiconductor through a double-network structure formed by a bioadhesive brush polymer and a redox-active semiconducting polymer. The resulting semiconducting film can form rapid and strong adhesion with wet tissue surfaces together with high charge-carrier mobility of ~1 square centimeter per volt per second, high stretchability, and good biocompatibility. Further fabrication of a fully bioadhesive transistor sensor enabled us to produce high-quality and stable electrophysiological recordings on an isolated rat heart and in vivo rat muscles.

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23

Alghamdi, Noweir Ahmad. "Study and Analysis of Simple and Precise of Contact Resistance Single-Transistor Extracting Method for Accurate Analytical Modeling of OTFTs Current-Voltage Characteristics: Application to Different Organic Semiconductors." Crystals 11, no. 12 (November 24, 2021): 1448. http://dx.doi.org/10.3390/cryst11121448.

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Contact resistance (Rc) characterizes the interface of source-drain electrodes/organic semiconductors and controls the injection efficiency of carriers in organic thin-film transistors (OTFTs). This research paper presents and assesses two methods for extracting the value of the contact resistance from the measured current-voltage characteristics of OTFTs made with various p-type organic semiconductors as active layers. These two methods are the transition voltage method (TVM) and the transfer line method (TLM). The obtained Rc values by the TVM method are in fair agreement with those obtained by TLM, with a maximum percentage of difference around 10%, demonstrating the accuracy of the used transition-voltage method. An analytical model was employed to calculate output characteristics in the linear regime of OTFTs made with various organic semiconductors using the contact resistance values obtained by the transition voltage method. The calculated results are in reasonably good agreement with the experimental ones of each fabricated device, which affirms the ability of the used model to characterize the charge transport correctly in these types of devices. It can be concluded that the used TVM method is not only an easy and practical method, but also a precise way for extracting Rc in OTFTs produced using different organic semiconductor materials.

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Cai, Songhua, Jun Dai, Zhipeng Shao, Mathias Uller Rothmann, Yinglu Jia, Caiyun Gao, Mingwei Hao, et al. "Atomically Resolved Electrically Active Intragrain Interfaces in Perovskite Semiconductors." Journal of the American Chemical Society 144, no. 4 (January 21, 2022): 1910–20. http://dx.doi.org/10.1021/jacs.1c12235.

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Barbaro, Massimo, Alessandra Caboni, Piero Cosseddu, Giorgio Mattana, and Annalisa Bonfiglio. "Active Devices Based on Organic Semiconductors for Wearable Applications." IEEE Transactions on Information Technology in Biomedicine 14, no. 3 (May 2010): 758–66. http://dx.doi.org/10.1109/titb.2010.2044798.

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26

Davydov, V. N. "Properties of electrically active structural defects in crystalline semiconductors." Soviet Physics Journal 31, no. 4 (April 1988): 338–42. http://dx.doi.org/10.1007/bf00892649.

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Fan, Zhihua, Qinling Deng, Xiaoyu Ma, and Shaolin Zhou. "Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration." Materials 14, no. 5 (March 7, 2021): 1272. http://dx.doi.org/10.3390/ma14051272.

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In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

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Mecke, R. "Multilevel inverter with active clamping diodes for energy efficiency improvement." Renewable Energy and Power Quality Journal 20 (September 2022): 138–42. http://dx.doi.org/10.24084/repqj20.245.

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Multilevel inverters can replace commonly used two-level inverters for three-phase electrical drives. In this lowvoltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. In the four-, five- and sevenlevel inverters, the majority of the power losses are caused by the threshold voltage of the clamping diodes. The new idea is the replacement of the clamping diodes by active switches, since they only have low on-resistance in the forward direction. In this case freewheeling paths of the clamping diodes would have to be actively switched. However, the control signals for the clamping switches can be generated by logic operations from the control signals for the main switches. The use of active clamping switches has significant potential to reduce semiconductor losses, but requires the development of wide-bandgap power semiconductors with reverse blocking capability. At nominal motor operation point of the 5.5 kW induction motor a loss reduction of 56 % between active clamping switches and clamping diodes is possible. With a higher number of inverter levels, the size of the motor filter can be reduced by about 70 % and also the losses can be reduced by 73 %.

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Rothschild, M., C. Arnone, and D. J. Ehrlich. "Laser photosublimation of compound semiconductors." Journal of Materials Research 2, no. 2 (April 1987): 244–51. http://dx.doi.org/10.1557/jmr.1987.0244.

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The visible-laser sublimation of CdTe, HgCdTe, CdS, and GaAs has been studied. A dynamic light guiding has been identified with an active feedback mechanism and is connected to the observation of 0.4 μm wide single-mode guiding structures during deep etching. The incipient stages of sublimation have been studied by mass spectrometry and are discussed in relation to diffusion mechanisms in the solid state.

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Kim, Seongjae, and Hocheon Yoo. "Active-Matrix Array Based on Thin-Film Transistors Using Emerging Materials for Application: From Lab to Industry." Electronics 13, no. 1 (January 4, 2024): 241. http://dx.doi.org/10.3390/electronics13010241.

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The active-matrix technology incorporates a transistor to exert precise control over each pixel within a pixel array, eliminating the issue of crosstalk between neighboring pixels that is prevalent in the passive-matrix approach. Consequently, the active-matrix method facilitates the realization of high-resolution arrays, and this inherent advantage has propelled its widespread adoption, not only in display applications but also in diverse sensor arrays from lab to industry. In this comprehensive review, we delve into instances of active-matrix arrays utilizing thin-film transistors (TFTs) that leverage emerging materials such as organic semiconductors, metal oxide semiconductors, two-dimensional materials, and carbon nanotubes (CNTs). Our examination encompasses a broad classification of active-matrix research into two main categories: (i) displays and (ii) sensors. We not only assess the performance of TFTs based on emerging materials within the active-matrix framework, but also explore the evolving trends and directions in active-matrix-based displays and sensors.

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Huseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect transistors. The description of the issues regarding charge carrier transport and other optoelectronic properties of organic semiconductors is also provided. The doping agents and methods commonly applied for organic semiconductors along with their fundamental mechanisms are introduced.

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Zhou, Xue Song, Bin Lu, and You Jie Ma. "Superconducting Magnetic Energy Storage Summarize." Advanced Materials Research 535-537 (June 2012): 2057–60. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.2057.

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Superconducting magnetic energy storage system using superconducting coils to store energy in the form of electromagnetic energy, Superconducting magnetic energy storage not only can reactive power compensation but also can active thought the power of mediation. It can achieve the power of the four-quadrant operation. This article outlines the advantages of the superconducting energy storage technology and development status, superconducting energy storage and how various components used. Finally describes how the four-quadrant active and power exchange. I think 21st century technology superconducting will develop far-reaching impact semiconductors as the 20th century semiconductors. So it has a great significance.

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An, Xiang, Kai Wang, Lubing Bai, Chuanxin Wei, Man Xu, Mengna Yu, Yamin Han, et al. "Intrinsic mechanical properties of the polymeric semiconductors." Journal of Materials Chemistry C 8, no. 33 (2020): 11631–37. http://dx.doi.org/10.1039/d0tc02255a.

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Intrinsic flexible polymeric semiconductors are the most potential active candidates in flexible optoelectronics for their solution-processing ability, dynamic programmable mechanical property and excellent optoelectronic behaviour.

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LI, BO. "IMPROVEMENT OF THE RESPONSE TIME FOR ORGANIC PHOTODETECTORS BY USING DISPLACEMENT CURRENT." Modern Physics Letters B 26, no. 16 (May 29, 2012): 1250100. http://dx.doi.org/10.1142/s021798491250100x.

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A new method is proposed to improve the response time of organic photodetectors by using displacement current. By inserting a transparent organic dielectric layer between the organic semiconductor active layer and the electrode the displacement current will be produced and replace the conduction current for current propagation, which will overcome the disadvantage of low carrier mobility of organic semiconductors. Under the irradiation of nanosecond pulse laser the rise time and fall time of the organic photodetector based on displacement current decrease 10% and 86%, respectively comparing to the conventional organic photodetector based on conduction current, which indicates the displacement current could renew the operation principle for high-speed organic photodetectors.

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Kryuchyn, A. A. "Creation of active optical metasurfaces on films of chalcogenide semiconductors with phase state change." Optoelektronìka ta napìvprovìdnikova tehnìka 58 (December 21, 2023): 195–205. http://dx.doi.org/10.15407/iopt.2023.58.195.

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The development of meta-optics is due to human aspirations for the maximum miniaturization of optical elements, the design and control of light fluxes, as well as the improvement of visualization and image processing. Metasurfaces, i.e. arrays with subwavelength distances (smaller than the wavelength of light), and optically thin elements trigger new physical mechanism and phenomena that are very different from those observed in three-dimensional bulk materials. Thus, meta-devices perform complete control and management of the characteristics of the light flux (phase, amplitude, polarization) with the help of one flat layer. Compared to traditional bulky lenses, metasurface lenses have advantages such as flatness, light weight, and compatibility with semiconductor manufacturing technology. The use of active (reconfigurable) metasurfaces, the characteristics of which can be dynamically rearranged after manufacturing, makes it possible to significantly expand the capabilities of meta-optics. The paper presents the results of the analysis of the properties and technologies of creating optically active metasurfaces for optical image processing and transformation systems. Generalized methods of forming metasurfaces are described: self-organization, selective chemical etching, holographic and lithographic. To implement the work of active (reconfigured) metasurfaces based on materials with a change in phase state (amorphous/crystalline), heating technologies with electric current pulses of various amplitudes and durations and the action of direct optical radiation are used. The analysis of materials for the formation of optically active metasurfaces and devices based on them that simulate the front of a light wave and work on reflection and transmission is presented. Special attention is paid to the use of photosensitive chalcogenide semiconductors as metamaterials with a phase change. Examples of materials such as Ge2Sb2Te5 (GST) and AgxInSb2Te (AIST), which have been used for decades in optical data storage and electronic memory devices, are given. A series of novel compositions of optical phase change materials such as Ge2Sb2Se4Te (GSST), Sb2S3, Sb2Se3, Ge2Sb2Te3S2 and In3SbTe2 for optical and photonic applications are also proposed. Direct laser recording on photosensitive films of chalcogenide semiconductors with the use of technological equipment for laser recording of master disks is proposed as a promising method of forming arrays with submicron distances and realizing the work of active metasurfaces.

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Wright, Iain A., Neil J. Findlay, Sasikumar Arumugam, Anto R. Inigo, Alexander L. Kanibolotsky, Pawel Zassowski, Wojciech Domagala, and Peter J. Skabara. "Fused H-shaped tetrathiafulvalene–oligothiophenes as charge transport materials for OFETs and OPVs." J. Mater. Chem. C 2, no. 15 (2014): 2674–83. http://dx.doi.org/10.1039/c3tc32571g.

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Mukerjee, Sanjeev, Benjamin William Kaufold, Sijia Dong, Parisa Nematollahi, Bernardo Barbiellini, and Dirk Lamoen. "(Invited) Plasmonic Enhancement of Electrochemical Reactions Using LSPR Phenomenon." ECS Meeting Abstracts MA2023-01, no. 30 (August 28, 2023): 1798. http://dx.doi.org/10.1149/ma2023-01301798mtgabs.

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Using Localized Surface Plasmon Resonance Effect for Enhancing Electrochemical reactions has been reported earlier both in terms of direct electron injection/transfer (DET) in outer-sphere reductive processes as well as charge injection into semiconductors via plasmon-induced resonant electron transfer processes (PIRE). While the former (DET) is mostly influenced by the lifetimes of the ejected hot electrons and their rapid cooling at the interface. For inner sphere reductive processes via the LSPR phenomenon, direct charge injection into the LUMO states of the adsorbed species is required. In this regard, it is imperative to distinguish between the inter-band charge transfer of the adsorbed species because of exposure to photons. In contrast to these charge injection into semiconductors via plasmon-induced resonant electron transfer processes (PIRE) is less understood and more complex. In this presentation, we will use the well-known endothermic anodic oxygen evolution reaction (OER) in alkaline pH to showcase fundamental aspects of charge injection and its effect on the hole-driven OER mechanism. For this well know OER catalyst, layered double hydroxides of Ni with Fe and Co dopants will be used. Electrochemical enhancement of OER will be explained based on detailed structural motifs of the semiconductors its band structure and the resonance effect of Au induced by the LSPR effect. The presence of direct and Indirect bandgaps will be discussed in the context of three possible mechanisms: (i) Charge carriers are directly injected via LSPR into the semiconductor. The conduction band of the semiconductor is usually (-0.1 to 0.0 eV vs. NHE) and the valence band is between (2.00 and 3.5 eV) which corresponds to electron energy between -2.00 to 3.5 eV vs NHE. For LSPR nanoparticles SPR energy is between 1.0 and 4.0 eV. Also, the Fermi energy of LSPR is usually 0.0 vs. NHE. Hence LSPR only enables energetic electrons to be transferred from metals to semiconductors. It is the interface between LSPR and the semiconductor which is important. Charge injection is more prevalent when metal LSPR is of lower energy than the semiconductor. Direct electron transfer (DET). (ii) Transfer not involving direct electron injection but via (a) near field electromagnetic and (b) resonant photon scattering mechanism. This has been shown to work by adding a thin dielectric material between the LSPR and semiconductor. This would be most likely in the case of OER where surface localized plasmons will be the most important determinant as opposed to recombination events in the bulk of the semiconductor. This is most important for OER as it depends on the surface hole concentration. It should be noted that larger nanoparticles (>50 nm) have increased resonant photon scattering. Such a mechanism is more prevalent when we have an overlap between metal LSPR and semiconductor bands leading to plasmon induced resonant electron transfer (PIRET). (iii) When metal LSPR is in direct contact with the semiconductor all three phenomenon could be active.

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Levine, Andrew M., Sankarsan Biswas, and Adam B. Braunschweig. "Photoactive organic material discovery with combinatorial supramolecular assembly." Nanoscale Advances 1, no. 10 (2019): 3858–69. http://dx.doi.org/10.1039/c9na00476a.

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Demirel, Gokhan, Hakan Usta, Mehmet Yilmaz, Merve Celik, Husniye Ardic Alidagi, and Fatih Buyukserin. "Surface-enhanced Raman spectroscopy (SERS): an adventure from plasmonic metals to organic semiconductors as SERS platforms." Journal of Materials Chemistry C 6, no. 20 (2018): 5314–35. http://dx.doi.org/10.1039/c8tc01168k.

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Balle, Salvador. "Analytical description of spectral hole-burning effects in active semiconductors." Optics Letters 27, no. 21 (November 1, 2002): 1923. http://dx.doi.org/10.1364/ol.27.001923.

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Adams, M., H. Westlake, M. O'Mahony, and I. Henning. "A comparison of active and passive optical bistability in semiconductors." IEEE Journal of Quantum Electronics 21, no. 9 (September 1985): 1498–504. http://dx.doi.org/10.1109/jqe.1985.1072818.

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Tua, Patrizio F., Marco Rossinelli, and Felix Greuter. "Transient response of electrically active grain boundaries in polycrystalline semiconductors." Physica Scripta 38, no. 3 (September 1, 1988): 491–97. http://dx.doi.org/10.1088/0031-8949/38/3/029.

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Bonnell, D. A. "Tunneling spectroscopic analysis of optically active wide band-gap semiconductors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 2 (March 1991): 551. http://dx.doi.org/10.1116/1.585566.

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Lee, Hyeon-Jun, Katsumi Abe, June-Seo Kim, Won Seok Yun, and Myoung-Jae Lee. "Parasitic Current Induced by Gate Overlap in Thin-Film Transistors." Materials 14, no. 9 (April 29, 2021): 2299. http://dx.doi.org/10.3390/ma14092299.

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As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between the gate and the semiconductor layer are analyzed, and the specific phenomena associated with the degree of overlap are reproduced. In the semiconductor layer, where the gate electrode is not overlapped, it is experimentally shown that a dual current is generated, and the results of 3D simulations confirm that the magnitude of the current increases as the parasitic current moves away from the gate electrode. The generation and path of the parasitic current are then represented visually through laser-enhanced 2D transport measurements; consequently, the flow of the dual current in the transistor is verified to be induced by the electrical potential imbalance in the semiconductor active layer, where the gate electrodes do not overlap.

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Jiang, Xin, Xiaodong Sun, Di Yin, Xiuling Li, Ming Yang, Xiaoxia Han, Libin Yang, and Bing Zhao. "Recyclable Au–TiO2 nanocomposite SERS-active substrates contributed by synergistic charge-transfer effect." Physical Chemistry Chemical Physics 19, no. 18 (2017): 11212–19. http://dx.doi.org/10.1039/c7cp01610g.

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We present the Au–TiO₂ nanocomposite as recyclable substrates for SERS enhancement, which is derived from the combined (synergistic) charge-transfer contribution of semiconductors and noble metals.

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Wang, Huiru, Jiawei He, Yongye Xu, Nicolas André, Yun Zeng, Denis Flandre, Lei Liao, and Guoli Li. "Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors." Physical Chemistry Chemical Physics 22, no. 3 (2020): 1591–97. http://dx.doi.org/10.1039/c9cp05050g.

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47

Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, Kengo Terai, Shuhei Sugii, Hironobu Hayashi, Naoki Aratani, Mitsuharu Suzuki, and Hiroko Yamada. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach." Materials 13, no. 10 (May 18, 2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established toward obtaining desirable thin-film morphology via this unconventional method. Herein, we evaluate a new windmill-shaped molecule with anthryl blades, 1,3,5-tris(5-(anthracen-2-yl)thiophen-2-yl)benzene, which is designed to deposit via the photoprecursor approach for use as the p-sublayer in p–i–n-type organic photovoltaic devices (OPVs). The new compound is superior to the corresponding precedent p-sublayer materials in terms of forming smooth and homogeneous films, thereby leading to improved performance of p–i–n OPVs. Overall, this work demonstrates the effectiveness of the windmill-type architecture in preparing high-quality semiconducting thin films through the photoprecursor approach.

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Wu, Huaxin, Wenjie Liu, Wenjie Ma, Tianyuan Liang, Xiaoyu Liu, and Jiyang Fan. "Special roles of two-dimensional octahedral frameworks in photodynamics of Cs₃Bi₂Br₉ nanoplatelets: Electron and lattice-wave localization." Applied Physics Letters 121, no. 18 (October 31, 2022): 181902. http://dx.doi.org/10.1063/5.0120767.

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The low-dimensional cesium bismuth halides are intriguing wide-bandgap semiconductors with fruitful photophysics. However, their photodynamics is rather intricate and remains debated. We study the optical properties of the Cs3Bi2Br9 nanoplatelets (NPLs) by using the combined experimental and first-principles calculation methods. The results indicate that the exhibited dominant blue emission band and weak green band arise from two kinds of shallow color centers. The Cs3Bi2Br9 NPLs exhibit Raman active and inactive vibrational modes that are separately ascribed to the localized lattice waves propagating along the edges and interiors of the quantum well-like bromide–bismuth octahedral frameworks in Cs3Bi2Br9. These findings improve our understanding of the unique photodynamics of these multiple quantum well-like semiconductor nanocrystals.

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Guzman Iturra, Rodrigo, and Peter Thiemann. "Asymmetrical Three-Level Inverter SiC-Based Topology for High Performance Shunt Active Power Filter." Energies 13, no. 1 (December 27, 2019): 141. http://dx.doi.org/10.3390/en13010141.

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Power quality conditioner systems, such as shunt active power filters (SAPFs), are typically required to have low power losses, high-power density, and to produce no electromagnetic interference to other devices connected to the grid. At the present, power converters with such a features are built using multilevel topologies based on pure silicon semiconductors. However, recently new semiconductors that offer massive reduction of power losses such as silicon carbide (SiC) MOSFETs have been introduced into the power electronics field. In the near future, the applications that demand the highest performance will be powered by multilevel converters based on SiC. In this paper a highly efficient three-level (3L) topology based entirely on silicon carbide (SiC) semiconductors for a SAPF is presented and analyzed in great detail. Furthermore, the proposed topology is compared with other full SiC-based conventional topologies: two level (2L), three-level T-type (3L-TNPC), and three-level neutral-point-clamped (3L-NPC) in terms of efficiency. The proposed asymmetrical topology has an efficiency superior to conventional all SiC 2L and 3L power circuits when the pulse or switching frequency of the system is set higher than 60 kHz. Further, for high current ratings, the asymmetrical topology has the advantage that it can be built just by cascading two half-bridge SiC modules.

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Lee, Sangyun, Bonwon Koo, Jae-Geun Park, Hyunsik Moon, Jungseok Hahn, and Jong Min Kim. "Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays." MRS Bulletin 31, no. 6 (June 2006): 455–59. http://dx.doi.org/10.1557/mrs2006.118.

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AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

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