Relevant bibliographies by topics / Active gate driver

Academic literature on the topic 'Active gate driver'

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Published: 14 March 2023

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Journal articles on the topic "Active gate driver"

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Lasek, Bartosz, Przemysław Trochimiuk, Rafał Kopacz, and Jacek Rąbkowski. "Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET." Applied Sciences 11, no. 5 (March 3, 2021): 2210. http://dx.doi.org/10.3390/app11052210.

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This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit.
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Liang, Mei, Jiwen Chen, Jinchao Bai, Pengyu Jia, and Yuzhe Jiao. "A New Gate Driver for Suppressing Crosstalk of SiC MOSFET." Electronics 11, no. 20 (October 11, 2022): 3268. http://dx.doi.org/10.3390/electronics11203268.

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High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage drops across the common-source inductor and the displacement current of the gate-drain capacitor of the OFF-state switch induce a spurious pulse on its gate-source voltage. This paper proposes a new gate driver using two Bipolar Junction Transistors (BJTs) and one diode to connect the gate terminal of SiC MOSFET and the negative driver voltage, which provides a low impedance path to bypass the displacement current of the gate-drain capacitor when crosstalk issues occur. The simulation results prove the proposed driver is valid on suppressing the crosstalk issue. The comparisons between the prior drivers and the proposed driver show the superiority of the proposed driver. Finally, the proposed gate driver is successfully implemented and experimentally verified on a 1.1 kW synchronous buck prototype.
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Fahmi, M. I., M. F. Mukmin, H. F. Liew, C. L. Wai, M. A. Aazmi, and S. N. M. Arshad. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (August 1, 2021): 2899. http://dx.doi.org/10.11591/ijece.v11i4.pp2899-2906.

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<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time delay. Closed-loop controls function is to charged current to the gate to restrict the IGBT emitter voltage to a predetermined level. This paper also presents the experiment on the gate driver capability based on a series-connected IGBTs with three IGBTs and a snubber circuit. The experimental results show a voltage offset with active control with a wide variation in load and imbalance conditions. Lastly, the experimental results are validated with the simulation results, where the simulation results agree with the experimental results.</span>
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Sukhatme, Yash, Vamshi Krishna Miryala, P. Ganesan, and Kamalesh Hatua. "Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs." IEEE Transactions on Industrial Electronics 67, no. 12 (December 2020): 10121–33. http://dx.doi.org/10.1109/tie.2019.2958301.

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Gras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace, and Gonzalo Picun. "Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.

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In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High-Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. Furthermore, the XTR26010 circuit implements an unprecedented functionality for high-temperature drivers allowing safe operation at system level by preventing any cross-conduction between high-side and low-side switches, through isolated communication between high-side and low-side drivers. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller with the power driver (XTR26010). For supplying the half-bridge gate driver, a compact isolated flyback power supply has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system has been successfully tested while driving different brands of SiC MOSFETs up to Ta=200°C, 600kHz of switching frequency and 600V high-voltage bus (limited by isolation transformers used). The demo board presented can be easily modified to drive other SiC and GaN transistors available in the market. The 200°C limitation of the demo board is due to passives, PCB material, and the solder paste used. However, all X-REL active circuits have been qualified within specifications well above 230°C.
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Ghorbani, Hamidreza, Vicent Sala, Alejandro Paredes Camacho, and Jose Romeral Martinez. "A Simple Closed-Loop Active Gate Voltage Driver for Controlling diC/dt and dvCE/dt in IGBTs." Electronics 8, no. 2 (January 30, 2019): 144. http://dx.doi.org/10.3390/electronics8020144.

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The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke electromagnetic interference (EMI). This paper proposes a new closed-loop gate driver to improve switching trajectory in insulated gate bipolar transistors (IGBTs) at the hard switching condition. The proposed closed-loop gate driver is based on an active gate voltage control method, which deals with emitter voltage (VEe) for controlling diC/dt and gets feedback from the output voltage (vCE) in order to control dvCE/dt. The sampled voltage signals modify the profile of the applied gate voltage (vgg). As a result, the desired gate driver (GD) improves the switching transients with minimum switching loss. The operation principle and implementation of the controller in the GD are thoroughly described. It can be observed that the new GD controls both dvCE/dt and diC/dt accurately independent of the variable parameters. The new control method is verified by experimental results. As a current issue, the known trade-off between switching losses and EMI is improved by this simple and effective control method.
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Bagheri, Alireza, Hossein Iman-Eini, and Shahrokh Farhangi. "A Gate Driver Circuit for Series-Connected IGBTs Based on Quasi-Active Gate Control." IEEE Journal of Emerging and Selected Topics in Power Electronics 6, no. 2 (June 2018): 791–99. http://dx.doi.org/10.1109/jestpe.2018.2791202.

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Coleman, Fred, and Young J. Moon. "System Simulation of Dual-Gate At-Grade Railroad-Highway Crossings: Development and Verification." Transportation Research Record: Journal of the Transportation Research Board 1605, no. 1 (January 1997): 88–95. http://dx.doi.org/10.3141/1605-11.

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A simulation model of a dual-gate railroad-highway grade crossing was developed, validated, and applied to six crossings on the Chicago–St. Louis High Speed Passenger Rail Corridor. Simulation was used to demonstrate the feasibility of modeling the interaction of active safety devices, driver behavior, and vehicular and train traffic, and the dual-gate model served as the basis for development of a four-quadrant gate simulation model. Findings from the dual-gate simulation indicate that aggressive or inattentive drivers in the nonrecovery zone frequently exceed stopping distances and more beyond gate arms, and therefore are likely to proceed at high risk of a collision between their vehicle and a train.
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Camacho, Alejandro Paredes, Vicent Sala, Hamidreza Ghorbani, and Jose Luis Romeral Martinez. "A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory." IEEE Transactions on Industrial Electronics 64, no. 11 (November 2017): 9032–42. http://dx.doi.org/10.1109/tie.2017.2719603.

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Waradzyn, Zbigniew, Robert Stala, Aleksander Skała, Andrzej Mondzik, and Adam Penczek. "A Cost-Effective Resonant Switched-Capacitor DC-DC Boost Converter – Experimental Results and Feasibility Model." Power Electronics and Drives 3, no. 1 (December 1, 2018): 75–83. http://dx.doi.org/10.2478/pead-2018-0004.

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Abstract This paper presents the results of experimental research of a resonant switched capacitor voltage multiplier in a cost-effective topology (CESCVM) with a limited number of active switches. In the charging mode of the switched capacitors, the converter utilizes only one active switch and a required number of diodes. Therefore, the cost of the converter is decreased as compared with that of a classical SCVM converter, owing to a lower number of switches and gate driver circuits, as well as a smaller PCB area. Moreover, the CESCVM has simpler control circuits and higher reliability. This paper presents the original experimental results of the operation of the CESCVM converter. A concept of the bootstrap supply of gate drivers of the flying switches is also examined.
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Dissertations / Theses on the topic "Active gate driver"

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Lui, Dawei. "Active gate driver design for GaN FET power devices." Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.

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Raszmann, Emma Barbara. "Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/95938.

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This work investigates the voltage scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel topologies, two-level switching topologies are of interest due to less complex circuitry, higher density, and simpler control techniques. In this work, to balance the voltage between series-connected MOSFETs, device turn-off speeds are dynamically controlled on active gate-drivers using active gate control. The implementation of the active gate control technique (specifically, turn-off dv/dt control) is described in this thesis. Experimental results of the voltage balancing behavior across eight 1.7 kV rated SiC MOSFET devices in series (6 kV total dc bus voltage) with the selected active dv/dt control scheme are demonstrated. Finally, the voltage balancing performance and switching behavior of series-connected SiC MOSFET devices are discussed.
Master of Science
According to ABB, 40% of the world's power demand is supplied by electrical energy. Specifically, in 2018, the world's electrical demand has grown by 4% since 2010. The growing need for electric energy makes it increasingly essential for systems that can efficiently and reliably convert and control energy levels for various end applications, such as electric motors, electric vehicles, data centers, and renewable energy systems. Power electronics are systems by which electrical energy is converted to different levels of power (voltage and current) depending on the end application. The use of power electronics systems is critical for controlling the flow of electrical energy in all applications of electric energy generation, transmission, and distribution. Advances in power electronics technologies, such as new control techniques and manufacturability of power semiconductor devices, are enabling improvements to the overall performance of electrical energy conversion systems. Power semiconductor devices, which are used as switches or rectifiers in various power electronic converters, are a critical building block of power electronic systems. In order to enable higher output power capability for converter systems, power semiconductor switches are required to sustain higher levels of voltage and current. Wide bandgap semiconductor devices are a particular new category of power semiconductors that have superior material properties compared to traditional devices such as Silicon (Si) Insulated-Gate Bipolar Junction Transistors (IGBTs). In particular, wide bandgap devices such as Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have better ruggedness and thermal capabilities. These properties provide wide bandgap semiconductor devices to operate at higher temperatures and switching frequencies, which is beneficial for maximizing the overall efficiency and volume of power electronic converters. This work investigates a method of scaling up voltage in particular for medium-voltage power conversion, which can be applied for a variety of application areas. SiC MOSFET devices are becoming more attractive for utilization in medium-voltage high-power converter systems due to the need to further improve the efficiency and density of these systems. Rather than using individual high voltage rated semiconductor devices, this thesis demonstrates the effectiveness of using several low voltage rated semiconductor devices connected in series in order to operate them as a single switch. Using low voltage devices as a single series-connected switch rather than a using single high voltage switch can lead to achieving a lower total on-state resistance, expectedly maximizing the overall efficiency of converter systems for which the series-connected semiconductor switches would be applied. In particular, this thesis focuses on the implementation of a newer approach of compensating for the natural unbalance in voltage between series-connected devices. An active gate control method is used for monitoring and regulating the switching speed of several devices operated in series in this work. The objective of this thesis is to investigate the feasibility of this method in order to achieve up to 6 kV total dc bus voltage using eight series-connected SiC MOSFET devices.
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Paredes, Camacho Alejandro. "Active gate drivers for high-frequency application of SiC MOSFETs." Doctoral thesis, Universitat Politècnica de Catalunya, 2020. http://hdl.handle.net/10803/669291.

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The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems. For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems. This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.
La tendencia en el diseño y desarrollo de convertidores de potencia está enfocada en realizar sistemas eficientes con alta densidad de potencia, fiabilidad y bajo costo. Los retos para cubrir esta tendencia están centrados principalmente en el uso de nuevas tecnologías de dispositivos de conmutación tales como, MOSFETs de carburo de silicio (SiC). Los MOSFETs de SiC presentan mejores características que sus homólogos de silicio; tienen baja resistencia de conducción, pueden trabajar a mayores velocidades de conmutación y pueden operar a mayores niveles de temperatura y tensión. A pesar de las ventajas de los transistores de SiC, existen problemas que se manifiestan cuando estos dispositivos operan a altas frecuencias de conmutación. Las rápidas velocidades de conmutación de los MOSFETs de SiC pueden provocar sobre-voltajes y sobre-corrientes que conllevan a problemas de interferencia electromagnética (EMI). Por tal motivo, el desarrollo de controladores de puertas es una etapa fundamental en los MOSFETs de SiC para eliminar los problemas a altas frecuencias de conmutación y aumentar su rendimiento. En consecuencia, aprovechar las ventajas de estos dispositivos y lograr sistemas más eficientes y con alta densidad de potencia. En esta tesis, se realiza un estudio, diseño y desarrollo de controladores activos de puerta para mejorar el rendimiento de conmutación de los MOSFETs de SiC aplicados a convertidores de potencia de alta frecuencia. Los controladores son validados a través de pruebas y estudios experimentales. Además, los controladores de puerta desarrollados son aplicados en convertidores para sistemas de carga inalámbrica de baterías de vehículos eléctricos. Los resultados muestran la importancia de los controladores de compuerta propuestos y su viabilidad en convertidores de potencia basados en carburo de silicio.
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Na, Xiaoxiang. "Game theoretical modelling of a driver's interaction with active steering." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708392.

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Engelmann, Georges [Verfasser], Doncker Rik W. [Akademischer Betreuer] De, and Stefan [Akademischer Betreuer] Heinen. "Reducing device stress and switching losses using active gate drivers and improved switching cell design / Georges Engelmann ; Rik Wivina Anna de Doncker, Stefan Heinen." Aachen : Universitätsbibliothek der RWTH Aachen, 2018. http://d-nb.info/1186069376/34.

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Hudson, Robert Dearn. "Development of an integrated co-processor based power electronic drive / by Robert D. Hudson." Thesis, North-West University, 2008. http://hdl.handle.net/10394/3723.

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The McTronX research group at the North-West University is currently researching self-sensing techniques for Active Magnetic Bearings (AMB). The research is part of an ongoing effort to expand the knowledge base on AMBs in the School of Electrical, Electronic and Computer Engineering to support industries that make use of the technology. The aim of this project is to develop an integrated co-processor based power electronic drive with the emphasis placed on the ability of the co-processor to execute AMB self-sensing algorithms. The two primary techniques for implementing self-sensing in AMBs are state estimation and modulation. This research focuses on hardware development to facilitate the implementation of the modulation method. Self-sensing algorithms require concurrent processing power and speed that are well suited to an architecture that combines a digital signal processor (DSP) and a field programmable gate array (FPGA). A comprehensive review of various power amplifier topologies shows that the pulse width modulation (PWM) switching amplifier is best suited for controlling the voltage and current required to drive the AMB coils. Combining DSPs and power electronics to form an integrated co-processor based power electronic drive requires detail attention to aspects of PCB design, including signal integrity and grounding. A conceptual design is conducted and forms part of the process of compiling a subsystem development specification for the integrated drive, in conjunction with the McTronX Research Group. Component selection criteria, trade-off studies and various circuit simulations serve as the basis for this essential phase of the project. The conceptual design and development specification determines the architecture, functionality and interfaces of the integrated drive. Conceptual designs for the power amplifier, digital controller, electronic supply and mechanical layout of the integrated drive is provided. A detail design is performed for the power amplifier, digital controller and electronic supply. Issues such as component selection, power supply requirements, thermal design, interfacing of the various circuit elements and PCB design are covered in detail. The output of the detail design is a complete set of circuit diagrams for the integrated controller. The integrated drive is interfaced with existing AMB hardware and facilitates the successful implementation of two self-sensing techniques. The hardware performance of the integrated coprocessor based power electronic drive is evaluated by means of measurements taken from this experimental self-sensing setup. The co-processor performance is evaluated in terms of resource usage and execution time and performs satisfactorily in this regard. The integrated co-processor based power electronic drive provided sufficient resources, processing speed and flexibility to accommodate a variety of self-sensing algorithms thus contributing to the research currently underway in the field of AMBs by the McTronX research group at the North-West University.
Thesis (M.Ing. (Electrical Engineering))--North-West University, Potchefstroom Campus, 2009.
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Alsibai, Ziad. "Návrh analogových obvodů s nízkým napájecím napětím a nízkým příkonem." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-233672.

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Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.
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Bay, Abo Dabbous Salma. "Využití nekonvenčních CMOS technik při návrhu analogových obvodů s nízkým příkonem a nízkým napájecím napětím pro biomedicínské aplikace." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-255291.

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Tato disertační práce se zabývá navržením nízkonapěťových, nízkopříkonových analogových obvodů, které používají nekonvenční techniky CMOS. Lékařská zařízení na bateriové napájení, jako systémy pro dlouhodobý fyziologický monitoring, přenosné systémy, implantovatelné systémy a systémy vhodné na nošení, musí být male a lehké. Kromě toho je nutné, aby byly tyto systémy vybaveny baterií s dlouhou životností. Z tohoto důvodu převládají v biomedicínských aplikacích tohoto typu nízkopříkonové integrované obvody. Nekonvenční techniky jako např. využití transistorů s řízeným substrátem (Bulk-Driven “BD”), s plovoucím hradlem (Floating-Gate “FG”), s kvazi plovoucím hradlem (Quasi-Floating-Gate “QFG”), s řízeným substrátem s plovoucím hradlem (Bulk-Driven Floating-Gate “BD-FG”) a s řízeným substrátem s kvazi plovoucím hradlem (Bulk-Driven Quasi-Floating-Gate “BD-QFG”), se v nedávné době ukázaly jako efektivní prostředek ke zjednodušení obvodového zapojení a ke snížení velikosti napájecího napětí směrem k prahovému napětí u tranzistorů MOS (MOST). V práci jsou podrobně představeny nejdůležitější charakteristiky nekonvenčních technik CMOS. Tyto techniky byly použity pro vytvoření nízko napěťových a nízko výkonových CMOS struktur u některých aktivních prvků, např. Operational Transconductance Amplifier (OTA) založené na BD, FG, QFG, a BD-QFG techniky; Tunable Transconductor založený na BD MOST; Current Conveyor Transconductance Amplifier (CCTA) založený na BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) založený na BD MOST; Winner Take All (WTA) and Loser Take All (LTA) založený na BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) založený na BD-QFG technice. Za účelem ověření funkčnosti výše zmíněných struktur, byly tyto struktury použity v několika aplikacích. Výkon navržených aktivních prvků a příkladech aplikací je ověřován prostřednictvím simulačních programů PSpice či Cadence za použití technologie 0.18 m CMOS.
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Tippner, Jeffrey E. "The Third World evangelical missiology of Orlando E. Costas." Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3278.

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This thesis examines the missiological writings of Orlando E. Costas (1943-1987), particularly The Church and Its Mission: A Shattering Critique from the Third World (1974); Theology of the Crossroads in Contemporary Latin America (1976); Christ Outside the Gate (1982); and Liberating News: A Theology of Contextual Evangelization (1989). From the early 1970s until his death in 1987 he wrote over 130 articles and 12 books in both Spanish and English that addressed key missiological concerns. A careful reading of a selection of Costas's texts oriented around a hymn, a gospel song, a psalm, and a poem provides the shape of this thesis. This thesis argues that Costas formulated a Third World evangelical missiology. Chapter one investigates what Costas's autobiographical material expressed about his positions on conversion, Protestant evangelicalism, missiology, and those living on the ‘periphery' of life. Chapter two recognises his commitment to the peoples of Latin America and the Caribbean in particular and the Third World in general. Chapter three explores Costas's analysis of the Latin American Protestant Church in a revolutionary situation in the continent and chapter four examines his survey and critical appraisal of Latin American liberation theology. Chapter five recognizes the pastoral shape of Costas's missiology. Chapter six explores his critical interaction with two more conservative evangelical missiological positions, the Church Growth Movement and Peter Beyerhaus and the Frankfurt Declaration, and chapter seven surveys the discussion within the international evangelical community regarding the relationship between evangelism and social responsibility. Chapter eight examines Costas's Liberating News as an expression of Third World evangelical missiology. Chapter nine considers the theological issue of penal substitutionary atonement and his missiology. The thesis concludes with an appraisal of the issues and contributions of Costas's Third World evangelical missiology to current missiological discussion.
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Yen-TingLiu and 劉彥廷. "Design of Pixel and Gate Driver Circuits for High-Driving-Speed Active-Matrix OLED Displays." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/zmjqz2.

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Books on the topic "Active gate driver"

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VAN. Toy Story: Official Game Book. Indianapolis, IN: BradyGames, 1995.

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RICH. The Lion King: Official Game Book. Indianapolis, IN: BradyGames, 1994.

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Hodgson, David S. J. Castlevania: Official Strategy Guide. Westlake Village, CA: Millennium Publications, Inc., 1999.

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Sepowski, Stephen J., ed. The Ultimate Hint Book. Old Saybrook, CT: The Ultimate Game Club Ltd., 1991.

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Tiller, Emerson H. The “Law” and Economics of Judicial Decision-Making. Edited by Francesco Parisi. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199684267.013.017.

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Over the last three decades, the economics of judicial behaviour has revealed itself most prominently in the field now known as Law and Positive Political Theory (Law and PPT). Instead of the traditional focus of ‘law and economics’ on the normative efficiency of legal rules, Law and PPT identifies the role of competition among legal and political institutions for policy outcomes, with these outcomes usually taking the form of legislative enactments, executive action, judicial opinions, or administrative agency pronouncements (regulations). This article illustrates the ‘law’ features of Law and PPT, while keeping the economics of judicial decision-making — especially the efficiency-driven, game-theoretic, utility maximization features — at the forefront of the analysis. It begins by summarizing basic elements of Law and PPT as relevant to judicial decision-making. It then discusses context-specific applications of Law and PPT where the craft of law is revealed as strategy.
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Valdini, Melody E. The Inclusion Calculation. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780190936198.001.0001.

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Power-holders and gate-keepers in political parties and governments continue to be primarily men. How are they responding to the increasing numbers of women who are seeking leadership roles in politics? Are they angels who embrace equality and fling open the doors to power? Are they devils who block women at every turn? Are they powerless against the increasing tide of feminism and inadvertently succumbing to the push for power from women? Most likely, these male elites are primarily concerned with maintaining their own power, which drives their reaction to women’s political inclusion. The Inclusion Calculation examines women’s inclusion from the perspective of men in power and offers a novel approach to understanding differences in women’s descriptive representation. The book argues that with declining legitimacy it is valuable for male elites to “strategically feminize,” associating themselves or their party with women, because citizens will interpret the increased presence of women as meaning that the party or government is becoming more honest, cooperative, and democratic. Using a combination of case studies from Latin America, Europe, and Africa, as well as large-N analyses, the book provides evidence that male elites are more likely to increase the number of women candidates on party lists or adopt a gender quota when “feminizing” is advantageous to the political careers of men. Women’s exclusion from government, then, is not a product of their own lack of effort or ability but rather a rational action of men in power to keep their power.
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Game Boy Advance: Miniature Gaming Masterclass. Bath, England: Future Publishing, 2001.

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N64 Magazine Double Game Guide +, No. 18: Castlevania 64 & Premier Manager 64. Bath, England: Future Publishing, 1999.

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N64 Magazine Double Game Guide +, No. 25: The World is Not Enough & WWF No Mercy. Bath, England: Future Publishing, 2001.

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Return of the Great N64 Magazine Games Challenge Book. Bath, England: Future Publishing, 2000.

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Book chapters on the topic "Active gate driver"

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Pnevmatikakis, Aristodemos, Harm op den Akker, Sofoklis Kyriazakos, Andrew Pomazanskyi, and Albena Mihovska. "Game and Multisensory Driven Ecosystem to an Active Lifestyle." In Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 49–58. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-23976-3_5.

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Chandu, Mankina, and K. Varalakshmi. "Gate Driver Design and Mitigation of Voltage Glitch in SiC MOSFET Using Miller Clamp." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde220774.

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This work provides a detailed discussion about power converter circuits using SiC MOSFET, a classical approach to designing gate drivers for SiC MOSFET, and mitigation of voltage glitch and crosstalk voltage in SiC MOSFET using active as well as passive miller clamp. Different type of gate driver configuration has been discussed in this work. Crosstalk voltage exits on the gate-source terminal of SiC power MOSFET. Active and passive miller clamps are used to eliminate any crosstalk voltage which is available in the switching the MOSFET. As a result of the rapid growth of semiconductor technology, a variety of high-performance semiconductor devices are becoming available for purchase. In recent years, the silicon carbide SiC MOSFET and the junction barrier Schottky diode (JBS) have been created and are now commercially accessible. SiC MOSFETs outperform their silicon counterparts in terms of performance. The voltage and current ratings of the SiC MOSFET have also been shown to be significantly higher than those of the Si MOSFET.
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Lokesh, Durga, M. Sai Durga, N. Sai Phani, K. Varalakshmi, and Ch Govinda. "Modelling and Controlling a Buck Converter Using Shunt Active Power Filter." In Advances in Transdisciplinary Engineering. IOS Press, 2023. http://dx.doi.org/10.3233/atde221231.

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This paper discusses the modelling and control aspects of an enclosed lowest converter-based shunt active power filter. In an AC distribution network, the shunt active power filter reduces harmonic interference. Using an interleaved buck converter architecture prevents the typical inverter’s shoot-through problem. The P-Q control method is utilised to provide compensating current. One loop controls the dc-link voltage while the other regulates the voltage mode. This technique uses a twin-loop architecture. For example, the park transformation and inverse park transformation are used in the current loop to take the load current into account. Current is controlled using hysteresis using a current limiting device. PWM is used to create switching pulses by the gate driver, a digital signal processor. All three parameters of a non-ideal voltage source can be figured out. For an unbalanced nonlinear load, the voltage at the source, the load’s current, and the source’s current have all been provided.
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Hadjistassou, Stella K., and Judith Molka-Danielsen. "Designing Alien Mysteries in Chatterdale." In Advances in Game-Based Learning, 222–36. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-9629-7.ch011.

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As part of a larger, three-year long European project, Franziska reflected on her experiences in designing and implementing age-appropriate, immersive learning experiences in the virtual village of Chatterdale in OpenSim. Thirteen-year-old German and Norwegian students learning English as a target language engaged in collaborative goal-driven actions, task-oriented activities, and verbal interactions in a quest to solve a mystery involving extraterrestrials and the local residents' disappearance. Building on Barab, Gresalfi, and Arici's (2009) conceptualization of game-oriented environments as transformational activities, the focus was placed on investigating how the emerging affordances can empower learners and enact opportunities to actively participate in these game-driven learning experiences and mold the content and context. The study illustrated that the design of this virtual Chatterdale science fiction scenario was student-instigated, while students' quest to unravel the mystery afforded opportunities for active involvement and collaborative actions, engagement in verbal exchanges, and interaction with content and context.
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Madin, Ian P., Ashley R. Streig, and Scott E. K. Bennett. "The Mount Hood fault zone, active faulting at the crest of the dynamic Cascade Range, north-central Oregon, USA." In From Terranes to Terrains: Geologic Field Guides on the Construction and Destruction of the Pacific Northwest, 49–71. Geological Society of America, 2021. http://dx.doi.org/10.1130/2021.0062(03).

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ABSTRACT The Mount Hood fault zone is a N-trending, ~55-km-long zone of active faulting along the western margin of the Hood River graben in north-central Oregon. The Mount Hood fault zone occurs along the crest of the Cascade Range and consists of multiple active fault segments. It is presently unclear how much Hood River graben extension is actively accommodated on the fault zone, and how Cascade intra-arc extension accommodates regional patterns of clockwise rotation and northwest translation of crustal blocks in the Pacific Northwest region of the United States. Evidence for Holocene activity on the Mount Hood fault zone was discovered in 2009 after acquisition of high-resolution lidar topography of the area. This trip will visit sites displaying evidence of Holocene surface rupture on fault strands within the Mount Hood fault zone. Day 1 starts with a two-hour drive from Portland to Mount Hood, a 3429-m-high glaciated active volcano, where we will visit sites south of the summit along the Twin Lakes fault segment, including several fault scarps and two sites where dating of offset buried soils constrains the timing of the most recent surface-rupturing event to the Holocene. Day 1 includes two hikes of ~1 km and will be partly cross-country. The trip will overnight at the historic Timberline Lodge, an architectural masterpiece from the Civilian Conservation Corps (1933–1942) era, located at tree line on the southern flank of Mount Hood. Day 2 will visit sites north of the summit, stopping along the Blue Ridge fault segment to view the site of 2011 paleoseismic trenches and an offset glacial moraine. We will visit an unusual uphill-facing scarp in coarse talus along the Gate Creek fault segment near the north end of the Mount Hood fault zone. We will conclude Day 2 with a short hike into the Mark O. Hatfield Wilderness along the Gate Creek fault segment to view evidence of a surface-rupturing earthquake that occurred only a few centuries ago, illuminated by a nearby paleoseismic trench hand-dug in 2020. Our neotectonic and paleoseismic data are among the first efforts to document and characterize seismic sources within the Mount Hood fault zone. However, even with our new age data, fault slip rates and earthquake recurrence remain poorly constrained. With our limited earthquake timing data, it is not clear whether all segments of the Mount Hood fault zone rupture together as a ≥ M 7 earthquake, or alternatively, if the fault segments rupture independently in a sequence of smaller ~M 6–sized events.
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Weiner, Sara P., and Melissa McMahan. "Action Taking Augmented by Artificial Intelligence." In Employee Surveys and Sensing, 338–54. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780190939717.003.0021.

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Taking action is unequivocally the most important aspect of any employee survey program. Many organizations struggle to achieve adoption and accountability and, in turn, to realize meaningful change. In our rapid-cycle economy, organizations need solutions to nimbly respond to the changing expectations and needs of customers, employees, and managers. Advances in the use of artificial intelligence (AI) have the power to be a game changer if coupled with evidence-based and forward-thinking industrial and organizational psychology practices. We propose an action-taking approach summarized as take action that matters, communicate, and repeat frequently. AI has greatly facilitated our ability to quickly determine the actions that will matter most and empower managers and employees toward real-time action taking. AI can deliver real-time prescriptive and predictive analytics, provide greater insights and guidance to managers, leverage natural language processing, and free human resources departments to focus on coaching and systemic issues, which together drive agile practices to achieve meaningful change.
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Wilson, Joseph, and Aisha Kolo Lawan. "Digital Leisure or Digital Business?" In Digital Multimedia, 1407–18. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-3822-6.ch067.

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The fourth world conference on women in Beijing in 1995 was a springboard for women acceptance to explore various media possibilities to enhance their global visibility for societal recognition, address the negative media portrayal of women, and strengthen the gender equality struggles. Their platform for action on women and the media was to strategically increase the participation and access of women to expression and decision-making in and through the media and new technologies of communication. These declarations and strategies were clear indications and a call for creating new avenues for expression and participation for the purpose of empowering women. These plans of action and adoption of new technologies of communication must translate into relevant engagement with these technologies to be able to achieve the set goals. Engaging with technologies for leisure purposes (digital leisure) are likely to be of little significance to serious Internet activities relevant to women empowerment drive (digital business). The purpose for which women engage these new technologies should reflect issues that are in tandem with women empowerment drive. This Chapter examined what area Nigerian women are engaging the Internet. Findings showed that more Nigeria women access the Internet through mobile devices such as smartphones and tablets. Nigerian women engage the Internet for both digital leisure and digital business but they do more leisure-based Internet activities than serious activities that facilitate women empowerment (their Internet activities are more leisure oriented than business oriented) The women Internet empowerment drive can only be realised if Nigerian women up their game in digital business activities on the Internet.
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Wilson, Joseph, and Aisha Kolo Lawan. "Digital Leisure or Digital Business?" In Overcoming Gender Inequalities through Technology Integration, 244–59. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-9773-7.ch013.

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The fourth world conference on women in Beijing in 1995 was a springboard for women acceptance to explore various media possibilities to enhance their global visibility for societal recognition, address the negative media portrayal of women, and strengthen the gender equality struggles. Their platform for action on women and the media was to strategically increase the participation and access of women to expression and decision-making in and through the media and new technologies of communication. These declarations and strategies were clear indications and a call for creating new avenues for expression and participation for the purpose of empowering women. These plans of action and adoption of new technologies of communication must translate into relevant engagement with these technologies to be able to achieve the set goals. Engaging with technologies for leisure purposes (digital leisure) are likely to be of little significance to serious Internet activities relevant to women empowerment drive (digital business). The purpose for which women engage these new technologies should reflect issues that are in tandem with women empowerment drive. This Chapter examined what area Nigerian women are engaging the Internet. Findings showed that more Nigeria women access the Internet through mobile devices such as smartphones and tablets. Nigerian women engage the Internet for both digital leisure and digital business but they do more leisure-based Internet activities than serious activities that facilitate women empowerment (their Internet activities are more leisure oriented than business oriented) The women Internet empowerment drive can only be realised if Nigerian women up their game in digital business activities on the Internet.
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Ahdar, Rex. "Vertical Arrangements." In The Evolution of Competition Law in New Zealand, 124–51. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198855606.003.0005.

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Then law governing vertical arrangements is a comparatively undeveloped area in NZ competition law. With only resale price maintenance (RPM) expressly prohibited by the Act, it has fallen to the general prohibitions on anticompetitive arrangements and monopolization to address traditional antitrust mischiefs such as exclusive dealing and tying. The leading case on exclusive dealing was heavily influenced by Chicagoan thinking to the degree that the courts gave the green light to durable distribution arrangements that countenanced foreclosure on a large scale and were plainly anti-competitive. However, the few cases on tying have been more fruitful insofar as remedies have been granted to rectify blatant leveraging by dominant firms into related markets. A period of active enforcement of RPM by the Commerce Commission marked the first decade, but the swathe of prosecutions dried up as the twenty-first century began.
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Williams, Keith. "An Individuating Rhythm: Picturing Time in a Portrait of The Artist as a Young Man." In James Joyce and Cinematicity, 106–73. Edinburgh University Press, 2020. http://dx.doi.org/10.3366/edinburgh/9781474402484.003.0003.

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Focuses on Joyce’s interest in visual analysis of movement, another technological and scientific drive leading to film. Joyce’s ‘epiphany’ resembles the camera’s defamiliarising gaze. This tendency evolved through Portrait’s three versions. Its mobile, camera-eyed focalisation and ‘montage’ structure stem from speculations about picturing the ‘rhythm’ or ‘curve’ of a developing mind in his 1904 version. Portrait constituted a breakthrough into ‘stream of consciousness’ form through synergy with experimental photography: Muybridge’s ‘animal locomotion studies’ and Marey’s ‘Chronophotographie’. These captured transitory phenomena, picturing time and recomposing action as a series of moments to apprehend its reality. Muybridge’s sequences anticipate the filmstrip, eventually animating consecutive stills into a ‘fluid succession of presents’. Similarly, Marey’s overlapping shots liberated the ‘individuating rhythm’ of a moving body, as a rising and falling ‘curve’. Thus Joyce’s means of picturing the psycho-sensory movement of consciousness used such dissection and recomposition of physical motion as guiding metaphor. Portrait’s ‘mobilised virtual gaze’ and interiorised ‘rhythm’ are based on imagistic association overlapping present perceptions and memories, tracing a pattern towards Stephen’s vocational future, simultaneously the novel’s underlying topic and form and taking Joyce’s cinematicity into a new phase.
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Conference papers on the topic "Active gate driver"

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Mahmodicherati, Sam, Nandini Ganesan, Lakshmi Ravi, and Rangarajan Tallam. "Application of Active Gate Driver in Variable Frequency Drives." In 2018 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2018. http://dx.doi.org/10.1109/ecce.2018.8558170.

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Rubino, Luigi, and Guido Rubino. "On the Active Clamp Gate Driver Thermal Effects." In 2019 International Conference on Clean Electrical Power (ICCEP). IEEE, 2019. http://dx.doi.org/10.1109/iccep.2019.8890213.

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Dymond, Harry C. P., Dawei Liu, Jianjing Wang, Jeremy J. O. Dalton, and Bernard H. Stark. "Multi-level active gate driver for SiC MOSFETs." In 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2017. http://dx.doi.org/10.1109/ecce.2017.8096860.

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Han, Dongwoo, Sanghun Kim, Xiaofeng Dong, Zhehui Guo, Hui Li, Jinyeong Moon, Yuan Li, Fang Z. Peng, Radha Sree Krishna Moorthy, and Madhu Chinthavali. "An Integrated Active Gate Driver for SiC MOSFETs." In 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). IEEE, 2021. http://dx.doi.org/10.1109/wipda49284.2021.9645086.

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Vamshi Krishna, M., and Kamalesh Hatua. "An Easily Implementable Gate Charge Controlled Active Gate Driver for SiC MOSFET." In IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2018. http://dx.doi.org/10.1109/iecon.2018.8591843.

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Du, Xia, Yuqi Wei, Andrea Stratta, Liyang Du, Venkata Samhitha Machireddy, and Alan Mantooth. "A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages." In 2022 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2022. http://dx.doi.org/10.1109/apec43599.2022.9773689.

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Vamshi Krishna M and Kamalesh Hatua. "Current controlled active gate driver for 1200V SiC MOSFET." In 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES). IEEE, 2016. http://dx.doi.org/10.1109/pedes.2016.7914328.

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Paredes, Alejandro, Vicent Sala, Hamidreza Ghorbani, and Luis Romeral. "A novel active gate driver for silicon carbide MOSFET." In IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2016. http://dx.doi.org/10.1109/iecon.2016.7793222.

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Wiesemann, Julius, and Axel Mertens. "An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters." In IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2021. http://dx.doi.org/10.1109/iecon48115.2021.9589774.

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Hyon, ByongJo, Joon-Sung Park, and Jin-Hong Kim. "The Active Gate Driver for Switching Loss Reduction of Inverter." In 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2020. http://dx.doi.org/10.1109/ecce44975.2020.9236180.

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