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Journal articles on the topic 'Active Deep Trench Isolation'

Author: Grafiati

Published: 25 January 2025

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1

David Theodore, N., Barbara Vasquez, and Peter Fejes. "Microstructural characterization of implanted LOCOS + trench-isolated structures." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 888–89. http://dx.doi.org/10.1017/s0424820100088750.

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As device dimensions decrease and circuit densities increase, conventional LOCOS (Local-Oxidation of Silicon) isolation presents a limitation due to lateral encroachment of the isolation-oxide. Variations in LOCOS, including poly-buffered LOCOS have been of interest as means to limit lateral encroachment of the field-oxide into the active device-region. Deep-trench isolation provides a means to support device scaling and in this work is integrated with poly-buffered LOCOS to create self-aligned shallow fieldoxide elements with minimal encroachment into active regions. Use of these technologies however requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of fabrication-related stresses in the structures is of interest because extended-defects, if formed, could electrically degrade devices.

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2

Park, Byung Jun, Jongwan Jung, Chang-Rok Moon, Sung Ho Hwang, Yong Woo Lee, Dae Woong Kim, Kee Hyun Paik, Jong Ryeol Yoo, Duck Hyung Lee, and Kinam Kim. "Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch." Japanese Journal of Applied Physics 46, no. 4B (April 24, 2007): 2454–57. http://dx.doi.org/10.1143/jjap.46.2454.

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3

Schonenberg, K., Siu-Wai Chan, D. Harame, M. Gilbert, C. Stanis, and L. Gignac. "The stability of Si1−xGex strained layers on small-area trench-isolated silicon." Journal of Materials Research 12, no. 2 (February 1997): 364–70. http://dx.doi.org/10.1557/jmr.1997.0052.

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The combined effects of isolation stress, active area size, and SiGe misfit strain on dislocation generation in an advanced SiGe heterojunction bipolar transistor (HBT) process were studied. Eight-inch wafers were patterned with polysilicon-filled deep, and oxide-filled shallow trench isolation similar to that used in IBM's analog SiGe HBT technology. Half of the wafers were subjected to an additional stress-producing oxidation prior to SiGe growth. Si1−xGex films containing 0, 5.5, 9, and 13 at.% Ge were grown epitaxially by ultrahigh vacuum chemical vapor deposition (UHV CVD). The films were of constant thickness with an intrinsic Si cap. Some samples received an additional relaxation anneal following deposition. After the growth and anneal cycles, the dislocation density was determined by transmission electron microscopy (TEM). On nonstressed samples, no dislocations were observed in the device areas, even at Ge concentrations which are not stable to misfit dislocation generation in blanket form. This small area effect has been observed on patterned substrates that do not have functional device isolation. On the stressed-isolation wafers, the compressive stress from the oxidation of the trench sidewalls was found to intensify stress in the SiGe films, and to lower the critical strain at which misfit dislocations appeared. In large active areas on these wafers, two distinct dislocation regions were observed. Defects at the edge resembled those caused by isolation stress, while the defects in the center were more typical of the misfit dislocations associated with lattice-mismatch epitaxial films. It is clear that isolation stress must be minimized when fabricating integrated circuits using SiGe epitaxial films. It is also evident that SiGe films grown on nonstressed isolation exhibit the same increase in critical thickness with decreasing lateral dimension that has been observed on much simpler patterned substrates.

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4

Ajel, Hasan A., Haider S. Al-Jubair, and Jaafar K. Ali. "An experimental study on vibration isolation by open and in-filled trenches." Open Engineering 12, no. 1 (January 1, 2022): 555–69. http://dx.doi.org/10.1515/eng-2022-0011.

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Abstract The mitigation of vibrations due to a harmonic load induced by a mechanical oscillator is studied experimentally. The vertical components of soil particle velocities are measured (via geophones) at different locations apart from the source, where various frequencies (30–70 Hz) are generated. For normal conditions where no mitigation means are used, it is found that the measured peak particle velocities are proportional to the excitation frequencies. The mitigation effect of constructing an active (near source) open (0.4 m wide × 3 m long × 2 m deep) trench barrier is also studied. The measurements revealed velocity increase at the points in front of the trench due to the reflected waves. This increase is proportional to the vibration frequency. Although the presence of the barrier greatly reduced the peak particle velocities beyond it, it is found that the efficiency of screening is more pronounced at high vibration frequencies. Increased and fluctuated trends of the amplitude reduction ratio are reported away from the barrier. It is realized that passive (near target) screening is less effective for all frequencies except at 30 Hz. Active and passive trenches, filled with native soil–rubber mixture at various ratios (20–40% rubber), are also considered. The rubber material is in a form of tire chips purchased from the Unit of Recycling Scrap Tires in Al-Diwaniyah Tires Factory. Although the in-filled trenches are less effective in screening the vibrations, similar trends and behavior to the open trenches are noted. It is found that the mitigation efficacy is increased with the rubber content.

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5

Kang, Harin, and Yunkyung Kim. "High Sensitive Pixels using the Deep Trench Isolation." Journal of Korean Institute of Information Technology 19, no. 9 (September 30, 2021): 49–56. http://dx.doi.org/10.14801/jkiit.2021.19.9.49.

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6

Tsang, Y. L., and J. M. Aitken. "Junction breakdown instabilities in deep trench isolation structures." IEEE Transactions on Electron Devices 38, no. 9 (1991): 2134–38. http://dx.doi.org/10.1109/16.83741.

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7

Lee, S., and R. Bashir. "Modeling and characterization of deep trench isolation structures." Microelectronics Journal 32, no. 4 (April 2001): 295–300. http://dx.doi.org/10.1016/s0026-2692(00)00148-8.

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8

Fejes, Peter, N. David Theodore, and Han-Bin Liang. "Geometry-dependence of defects in PBLT serpentines." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1410–11. http://dx.doi.org/10.1017/s0424820100131681.

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Poly-buffered LOCOS + trench-isolation is a technique being explored for device-isolation on semiconductor substrates. The method creates self-aligned shallow field-oxide elements with minimal encroachment into active regions. In an earlier study/dislocations were observed in PBLT structures, associated with a combination of high-dose [∼1E15 cm−2] phosphorus implants and PBLT isolation. The present study investigates the effect of implant- and isolation-geometries on the formation of extended-defects in PBLT structures. The effect of fabrication-related stresses in the structures is of interest because extended-defects, once formed, can electrically degrade devices.PBLT structures were fabricated using varied implant- and isolation- geometries. Selected regions of the structures were exposed to 1E15 cm−2 phosphorus implants. Transmission electron microscopy was then used to characterize these regions. Some of the structures investigated were (i) trench with no adjacent implant, (ii) trench with an adjacent trench, but no implant, (iii) trench with a 1E15 cm−2 phosphorus implant placed ∼4 μm from the trench, (iv) trench with a 1E15 cm−2 phosphorus implant placed ∼2 μm from the trench, (v) doubly-kinked trench with a 1E15cm−2 phosphorus implant placed between the kinks.

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9

Liu, Jinglei, Chuanqing Yu, Kai Li, Jie Liu, and Mengyao Wen. "Test on the Influence of Geometric Parameters of an Annular Trench on the Vibration Isolation Area." Shock and Vibration 2020 (March 19, 2020): 1–19. http://dx.doi.org/10.1155/2020/7801085.

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To study the influence of annular trenches on a vibration isolation area, the depth, width, vibration source distance, and central angle of the trench are analysed as research variables, and a contour diagram of the amplitude reduction ratio is drawn based on an outdoor test of the trench. Taking an area with an amplitude reduction ratio less than 0.40 as the evaluation index of the effective vibration isolation area, the effects of the above geometric parameters on the vibration isolation area are analysed. Limited to the test conditions of this paper, the results show that the depth, vibration source distance, and deep width ratio are the important factors affecting the effective vibration isolation area; with the increase of the above parameters, the effective vibration isolation area increases significantly, but the area increase rate decreases gradually. The width has a relatively little effect on the effective vibration isolation area. When the ratio of depth to width is from 7.05 to 9.15, and the width reaches 0.23 times the Rayleigh wavelength, the annular trench can have a good effective vibration isolation area. When the central angle of the trench is less than 90°, a discontinuous effective vibration isolation area will form in the vibration isolation region. The selection of the central angle of the trench is related to the frequency. With the same trench size, the effective vibration isolation area decreases as frequency decreases. In addition, the effect of distance depth ratio on the effective vibration isolation area presents a fluctuation. When the ratio of distance to depth is from 1.21 to 2.05, a good effective vibration isolation area can be obtained and it is reasonable.

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10

Elattari, B., P. Coppens, G. Van den bosch, P. Moens, and G. Groeseneken. "Breakdown and hot carrier injection in deep trench isolation structures." Solid-State Electronics 49, no. 8 (August 2005): 1370–75. http://dx.doi.org/10.1016/j.sse.2005.06.003.

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11

Sang, Sheng Bo, Chen Yang Xue, Wen Dong Zahng, and Ji Jun Xiong. "Raman Investigation of Stress for Shallow Trench." Defect and Diffusion Forum 265 (May 2007): 1–6. http://dx.doi.org/10.4028/www.scientific.net/ddf.265.1.

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A trench is used as a storage capacitor in dynamic memory (DRAM) technologies (deep storage trenches), or as an isolation structure in CMOS, bipolar and BiCMOS technologies. But a shallow trench structure has also been shown to be a major factor in substrate defect generation during processing. Such defect generation is directly related to mechanical stresses existing around the trench. This stress can be monitored, using Raman spectroscopy, to a stress resolution of 10MPa and a spatial resolution of 0.2μm. In this paper, a trench structure is designed and fabricated, and the test results for local stresses within the trench are shown to be in good correspondence with theory.

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12

Gupta, Aakashdeep, K. Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, and Thomas Zimmer. "Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development." Electronics 9, no. 9 (August 19, 2020): 1333. http://dx.doi.org/10.3390/electronics9091333.

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In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having no-trench isolation (cij,nt). As a second step, using the value of cij,nt, we propose a formulation to estimate the coupling factor in a multifinger structure having only shallow trench isolations (cij,st). Finally, the coupling factor model for a deep and shallow trench isolated multifinger device (cij,dt) is presented. The proposed modeling technique takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are validated against 3D TCAD simulations of multifinger bipolar transistors with and without trench isolations. Geometry scalability of the model is also demonstrated.

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13

Al-Hussaini, T. M., and S. Ahmad. "Active Isolation of Machine Foundations by In-Filled Trench Barriers." Journal of Geotechnical Engineering 122, no. 4 (April 1996): 288–94. http://dx.doi.org/10.1061/(asce)0733-9410(1996)122:4(288).

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14

Forsberg, Markus, Ted Johansson, Wei Liu, and Manoj Vellaikal. "A Shallow and Deep Trench Isolation Process Module for RF BiCMOS." Journal of The Electrochemical Society 151, no. 12 (2004): G839. http://dx.doi.org/10.1149/1.1811596.

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15

Yeon, Chung-Kyu, and Hyuk-Joon You. "Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (May 1998): 1502–8. http://dx.doi.org/10.1116/1.581177.

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16

Perera, Asanga H. "Trench isolation at 300 nm active pitch using x-ray lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (November 1996): 4314. http://dx.doi.org/10.1116/1.589043.

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17

Balasubramanian, N., E. Johnson, I. V. Peidous, Shiu Ming-Jr, and R. Sundaresan. "Active corner engineering in the process integration for shallow trench isolation." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 2 (2000): 700. http://dx.doi.org/10.1116/1.591262.

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18

Kobayashi, Yusuke, Shinsuke Harada, Hiroshi Ishimori, Shinji Takasu, Takahito Kojima, Keiko Ariyoshi, Mitsuru Sometani, et al. "3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation." Materials Science Forum 858 (May 2016): 974–77. http://dx.doi.org/10.4028/www.scientific.net/msf.858.974.

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A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (RonA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a RonA of 10.3 mWcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm.

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19

Ahmed, Nayera, Guo Neng Lu, and François Roy. "Total Ionizing Dose Effects on CMOS Image Sensors with Deep-Trench Isolation." Key Engineering Materials 605 (April 2014): 453–56. http://dx.doi.org/10.4028/www.scientific.net/kem.605.453.

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We have investigated Total Ionizing Dose (TID) effects on a 1.4μm-pitch, Deep-Trench Isolation (DTI) CMOS image sensor for its use in radiation environment. Our investigation includes characterization and TCAD simulations (with parametric modeling) of the image sensor before and after irradiation with 60Co gamma rays source for TID from 3 to 100 Krad. We have obtained agreements between measured results and simulated ones on degradations of the characteristics Quantum Efficiency (QE) and dark current (Idark). The agreements validate our modeling and simulation approach to evaluating these characteristics. It has been shown that TID causes evolution of interface states of different parts of the pixel, which are responsible for QE and Idark degradations. TID effects on different parts of the pixel can be identified and quantified.

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20

Yu, Y. ‐C Simon, Carol A. Hacherl, Evan E. Patton, Eric L. Lane, Tadanori Yamaguchi, and Susan S. Dottarar. "Planarized Deep‐Trench Process for Self‐Aligned Double Polysilicon Bipolar Device Isolation." Journal of The Electrochemical Society 137, no. 6 (June 1, 1990): 1942–50. http://dx.doi.org/10.1149/1.2086836.

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21

Wang, Cheng T. "A three-dimensional threshold voltage expression for MOSFETs with deep-trench isolation." Solid-State Electronics 30, no. 9 (September 1987): 984–87. http://dx.doi.org/10.1016/0038-1101(87)90136-5.

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22

Zhou, K., and J. F. McDonald. "Impact of Deep-Trench-Isolation-Sharing Techniques on Ultrahigh-Speed Digital Systems." IEEE Transactions on Circuits and Systems II: Express Briefs 56, no. 10 (October 2009): 778–82. http://dx.doi.org/10.1109/tcsii.2009.2030535.

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23

Pellish, Jonathan A., Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Muthubalan Varadharajaperumal, Guofu Niu, Akil K. Sutton, et al. "Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies." IEEE Transactions on Nuclear Science 53, no. 6 (December 2006): 3298–305. http://dx.doi.org/10.1109/tns.2006.885798.

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24

Lörz, Anne-Nina, Anna Maria Jażdżewska, and Angelika Brandt. "A new predator connecting the abyssal with the hadal in the Kuril-Kamchatka Trench, NW Pacific." PeerJ 6 (June 7, 2018): e4887. http://dx.doi.org/10.7717/peerj.4887.

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The bathyal to hadal deep sea of north-west Pacific Ocean was recently intensively sampled during four international expeditions (KuramBio I and II, SoJaBio and SokhoBio). A large amphipod,Rhachotropis saskian. sp., was sampled in the Kuril-Kamchatka Trench and increases the number of described hadal species of that area to eight. A detailed description of the new species is provided, including illustrations, scanning-microscope images and molecular analysis. This predatory species was sampled at both continental and ocean abyssal margins of the Kuril-Kamchatka Trench as well as at hadal depths of the trench. The wide bathymetric distribution of the new species over more than 3,000 m is confirmed by molecular analysis, indicating that the Kuril Kamchatka Trench is not a distribution barrier for this species. However, the molecular analysis indicated the presence of isolation by distance of the populations of the studied taxon.

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25

Hun Lee, Choong, and Hyung Joo Lee. "Prevention of active area shrinkage using polysilicon stepped shallow trench isolation technology." Electronics Letters 39, no. 6 (2003): 569. http://dx.doi.org/10.1049/el:20030336.

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26

Subaşı, Ayşenur, Erkan Çelebi, Muhammet Burhan Navdar, Osman Kırtel, and Berna İstegün. "An Effective Alternative to the Open Trench Method for Mitigating Ground-Borne Environmental Body Waves: Corrugated Cardboard Boxes Reinforced with Balsa Wood." Applied Sciences 14, no. 22 (November 15, 2024): 10544. http://dx.doi.org/10.3390/app142210544.

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This research develops and evaluates a recyclable corrugated cardboard vibration isolation box reinforced with balsa wood as an alternative to traditional open trench methods for mitigating ground-borne environmental body waves. This study includes designing and testing scaled prototypes, laboratory analyses, prototype fabrication, and full-scale field experiments. In soft ground conditions, ensuring slope stability during deep excavations is a key engineering challenge for open trenches. For this purpose, scaled prototypes were subjected to laboratory tests to assess the resistance of the wave barrier’s wall surface. Numerical analyses were also conducted to evaluate the strength of the internal lattice structure under various loads. A prototype was fabricated for on-site experiments simulating real-world conditions. Field experiments evaluated the vibration isolation performance of the proposed barrier. Accelerometer sensors were strategically placed to gather data, analyzing ground surface vibrations for free field motions to assess the vibration shielding efficiency of both the open trench method and the corrugated vibration isolation box, with and without Styrofoam infill. This study concludes that the recyclable corrugated vibration isolation box is a viable alternative, offering comparable or improved vibration isolation efficiency in soft soil conditions while promoting environmental sustainability using recyclable materials.

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27

Milanesi, Francesca, Silvio Vendrame, Enrica Ravizza, Simona Spadoni, Francesco Pipia, and Luisito Livellara. "Impact of Surface Treatment of Si₃N₄ on Subsequent SiO₂ Deposition." Solid State Phenomena 219 (September 2014): 36–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.36.

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In a typical Power Device on the 0.16μm node, the isolation module is one of the most critical steps. The trench to be filled in those devices is rather deep and needs a considerable amount of a suitable dielectric material. The choice of dielectric in the present paper is falling on the SubAtmosphericUndopedSilicaGlass (SAUSG oxide) [1].

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28

Sakiyama, Tokuki, and Kouichi Ohwada. "Isolation and Growth Characteristics of Deep-Sea Barophilic Bacteria from the Japan Trench." Fisheries science 63, no. 2 (1997): 228–32. http://dx.doi.org/10.2331/fishsci.63.228.

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29

Vladimirova, Kremena, Jean-Christophe Crebier, Yvan Avenas, and Christian Schaeffer. "Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation." IEEE Transactions on Power Electronics 26, no. 11 (November 2011): 3423–29. http://dx.doi.org/10.1109/tpel.2011.2145390.

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30

Zhu, Kuiying, Qinsong Qian, Jing Zhu, and Weifeng Sun. "Process optimization of a deep trench isolation structure for high voltage SOI devices." Journal of Semiconductors 31, no. 12 (December 2010): 124009. http://dx.doi.org/10.1088/1674-4926/31/12/124009.

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31

Diestelhorst, Ryan M., Stanley D. Phillips, Aravind Appaswamy, Akil K. Sutton, John D. Cressler, Jonath Pellish, Robert A. Reed, et al. "Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation." IEEE Transactions on Nuclear Science 56, no. 6 (December 2009): 3402–7. http://dx.doi.org/10.1109/tns.2009.2030801.

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32

Аnisimov, O., and O. Ivanyk. "Methods of creating a conveyor lift route in a deep pit." Collection of Research Papers of the National Mining University 71 (December 2022): 29–41. http://dx.doi.org/10.33271/crpnmu/71.029.

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Purpose. Improving the technology of stripping and schemes for creating a steep trench in a deep pit makes it possible to create new cargo flows and develop mining operations. The purpose of the research work is to determine a more attractive scheme for the formation of the conveyor route. The paper compares two technological schemes: the creation of a steep half-trench to the lower horizons with the hilling of rocks and the formation of a working in the rocks in the form of a trench. The above purpose of the work is to substantiate an effective scheme for creating a steep trench for the subsequent placement of a conveyor stack on its base. This will allow moving the rock mass from the lower horizons to the upper ones at a lower cost. The considered schemes for creating the steep trench allowed it possible to determine the volume of preparatory work, the most attractive scheme for creating an inclined working during opening lower horizons in the conditions of the operating open pit of Poltava GOK, which makes it possible to reduce the use of dump trucks inside the open pit. The methods. The method of vertical sections was used for the calculation of the volumes of run-off-mine during the formation of the trench. A geographic information system (GIS), and a software package K-MINE was used for research. The method of comparing the scope of work and creating a conveyor route by options allowed to determine the most appropriate way of doing work. Findings. The parameters of a steep trench and half-trench were studied, including the established scope of work within the steep layers of the western side of the PGOK open pit. Opening with steep trenches allows for the placement of an existing elevator with the placement of a crushing and transfer station containing a mobile crusher from KRUPP. Implementing the scheme with a steep trench in the rocks, the scope of work is 79.555 thousand m3. For the construction of a half-trench, the amount of work is 733,887 thousand m3. Building capital trenches and semi-tranches in the conditions of the open pit of the Poltava Mining and Processing Plant, preference is given to semi-trenches, which are created from rocks (without drilling and blasting). The originality. The options and parameters for creating steep trenches for further placement of a conveyor stack on its base are considered. The scheme for moving the rock mass from the lower horizons to the upper ones has been improved, graphical dependencies of the scope of work have been established, and a comparison of technical indicators has been made for creating a steep trench and a half-trench. Practical implimintation. The considered schemes for creating a steep trench allowed to determine the volume of preparatory work, to establish the most attractive scheme for the creation of an inclined work in opening the lower horizons in the conditions of the active open pit of the Poltava GOK, what makes it possible to reduce the use of dump trucks inside the open pit and improve the schemes for moving rock mass.

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33

Nitta, Sayaka, Takafumi Kasaya, and Kiichiro Kawamura. "Active sediment creep deformation on a deep-sea terrace in the Japan Trench." Geological Magazine 158, no. 1 (December 28, 2018): 39–46. http://dx.doi.org/10.1017/s0016756818000894.

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AbstractEighty-six new acoustic survey lines along and across the Japan Trench revealed active sediment creep deformation on a deep-sea terrace at water depths of 400–1200 m in an area of arcuate-shaped depressions that are probably associated with tectonic erosion. The most active region of creep is located on the top at the surface of the depression south of 38° N. The area of creep deformation is characterized by arcuate-shaped topographic lineaments with active folds and active normal faults stepping down trenchward. In contrast to the southern region, normal faults at the top of the depression north of 38° N cut a sedimentary sequence (Unit 1) that is acoustically transparent with continuous weak reflectors, and this is covered by the undeformed layered sediment sequence of Unit 2. Unit 2 corresponds to the period of rising sea level that extended from the latest Pleistocene to the early Holocene (14–6 ka). Thus, creep is ongoing at the top of the depression south of 38° N in the surface layer, whereas it stopped north of the depression between 14 and 6 ka. These observations might indicate that the active region jumped from north to south due to probably retrogressive sliding.

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34

Virgilio, C., Lucile Broussous, Philippe Garnier, J. Carlier, P. Campistron, V. Thomy, M. Toubal, Pascal Besson, L. Gabette, and B. Nongaillard. "Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry." Solid State Phenomena 255 (September 2016): 129–35. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.129.

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Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.

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35

Hashimoto, Takashi, Hidenori Satoh, Hiroaki Fujiwara, and Mitsuru Arai. "A Study on Suppressing Crosstalk Through a Thick SOI Substrate and Deep Trench Isolation." IEEE Journal of the Electron Devices Society 1, no. 7 (July 2013): 155–61. http://dx.doi.org/10.1109/jeds.2013.2279677.

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36

Qian, Qinsong, Weifeng Sun, Dianxiang Han, Siyang Liu, Zhan Su, and Longxing Shi. "The optimization of deep trench isolation structure for high voltage devices on SOI substrate." Solid-State Electronics 63, no. 1 (September 2011): 154–57. http://dx.doi.org/10.1016/j.sse.2011.05.020.

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37

Zhu, Yong, Guizhen Yan, Jie Fan, Jian Zhou, Xuesong Liu, Zhihong Li, and Yangyuan Wang. "Fabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications." Journal of Micromechanics and Microengineering 15, no. 3 (January 14, 2005): 636–42. http://dx.doi.org/10.1088/0960-1317/15/3/027.

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38

Kim, Yongnam, and Yunkyung Kim. "High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation." Sensors 19, no. 21 (October 26, 2019): 4653. http://dx.doi.org/10.3390/s19214653.

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The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 μm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowers the sensitivity and increases crosstalk because the aspect ratio is worsened by maintaining the height of the pixel. This work introduces a high-sensitivity pixel with a quad-WRGB (White, Red, Green, Blue) color filter array (CFA), spatial deep-trench isolation (S-DTI), and a spatial tungsten grid (S-WG). The optical performance of the suggested pixel was analyzed by performing 3D optical simulations at 1.0, 0.9, and 0.8 μm pixel pitches as small-sized pixels. The quad-WRGB CFA is compared with the quad-Bayer CFA, and the S-DTI and S-WG are compared with the conventional DTI and WG. We confirmed an improvement in the sensitivity of the suggested pixel using the quad-WRGB CFA with S-DTI and S-WG to a maximum of 58.2%, 67.0%, and 66.3% for 1.0, 0.9, and 0.8 μm pixels, respectively.

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Abouelatta, Mohamed, Marwa S. Salem, Ahmed Shaker, Mohamed Elbanna, Abdelhalim Zekry, and Christian Gontrand. "Parasitic Suppression in 2D Smart Power ICs Using Deep Trench Isolation: A Simulation Study." National Academy Science Letters 43, no. 2 (September 10, 2019): 167–70. http://dx.doi.org/10.1007/s40009-019-00830-0.

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Schilling, O. S., K. Nagaosa, T. U. Schilling, M. S. Brennwald, R. Sohrin, Y. Tomonaga, P. Brunner, R. Kipfer, and K. Kato. "Revisiting Mt Fuji’s groundwater origins with helium, vanadium and environmental DNA tracers." Nature Water 1, no. 1 (January 19, 2023): 60–73. http://dx.doi.org/10.1038/s44221-022-00001-4.

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AbstractKnown locally as the water mountain, for millennia Japan’s iconic Mt Fuji has provided safe drinking water to millions of people via a vast network of groundwater and freshwater springs. Groundwater, which is recharged at high elevations, flows down Fuji’s flanks within three basaltic aquifers, ultimately forming countless pristine freshwater springs among Fuji’s foothills. Here we challenge the current conceptual model of Fuji being a simple system of laminar groundwater flow with little to no vertical exchange between its three aquifers. This model contrasts strongly with Fuji’s extreme tectonic instability due to its unique location on top of the only known continental trench–trench–trench triple junction, its complex geology and its unusual microbial spring water communities. On the basis of a unique combination of microbial environmental DNA, vanadium and helium tracers, we provide evidence for prevailing deep circulation and a previously unknown deep groundwater contribution to Fuji’s freshwater springs. The most substantial deep groundwater upwelling has been found along Japan’s most tectonically active region, the Fujikawa-kako Fault Zone. Our findings broaden the hydrogeological understanding of Fuji and demonstrate the vast potential of combining environmental DNA, on-site noble gas and trace element analyses for groundwater science.

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Coq Germanicus, R., and U. Lüders. "Electrical Characterizations Based on AFM: SCM and SSRM Measurements with a Multidimensional Approach." EDFA Technical Articles 24, no. 3 (August 1, 2022): 24–31. http://dx.doi.org/10.31399/asm.edfa.2022-3.p024.

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Abstract This article demonstrates the value of atomic force microscopes, particularly the different electrical modes, for characterizing complex microelectronic structures. It presents experimental results obtained from deep trench isolation (DTI) structures using SCM and SSRM analysis with emphasis on the voltage applied by the AFM. From these measurements, a failure analysis workflow is proposed that facilitates AFM voltage optimization to reveal the structure of cross-sectioned samples, make comparisons, and determine the underlying cause of failures.

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Garnier, Philippe, Thomas Massin, Corentin Chatelet, Emmanuel Oghdayan, Jeffrey Lauerhaas, Carlos Morote, and Jeffery W. Butterbaugh. "Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid." Solid State Phenomena 314 (February 2021): 107–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.107.

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Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas during the STI (Shallow Trench isolation) integration. Oxygen in hot deionized water or hot HF generates this corrosion and selecting a relevant chemical oxide before dispensing hot diluted HF is key in solving the concern.

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Charavel, R., J. Roig, S. Mouhoubi, P. Gassot, F. Bauwens, P. Vanmeerbeek, B. Desoete, P. Moens, and E. De Backer. "Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices." Microelectronics Reliability 50, no. 9-11 (September 2010): 1758–62. http://dx.doi.org/10.1016/j.microrel.2010.07.117.

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Gupta, Aakashdeep, K. Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, and Thomas Zimmer. "Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation." Electronics 9, no. 9 (August 23, 2020): 1365. http://dx.doi.org/10.3390/electronics9091365.

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In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries.

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Lin, Tony, Yoyi Gong, Jung-Tsung Tseng, Lorenzo Yu, Tzermin Shen, Daniel Chen, T. P. Chen, et al. "Optimization of Active Geometry Configuration and Shallow Trench Isolation (STI) Stress for Advanced CMOS Devices." Japanese Journal of Applied Physics 43, no. 4B (April 27, 2004): 1756–58. http://dx.doi.org/10.1143/jjap.43.1756.

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Mica, Isabella, Pierpaolo Monge Roffarello, Didier Dutartre, Michele Basso, Alexandra Abbadie, Jacopo Frascaroli, Marta Tonini, et al. "(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation." ECS Transactions 102, no. 4 (May 7, 2021): 29–36. http://dx.doi.org/10.1149/10204.0029ecst.

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Du, Yuan, Yong Ye, Weiliang Jing, Xiaoyun Li, Zhitang Song, and Bomy Chen. "Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process." IEICE Electronics Express 14, no. 15 (2017): 20170628. http://dx.doi.org/10.1587/elex.14.20170628.

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Mica, Isabella, Pierpaolo Monge Roffarello, Didier Dutartre, Michele Basso, Alexandra Abbadie, Jacopo Frascaroli, Marta Tonini, et al. "(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation." ECS Meeting Abstracts MA2021-01, no. 34 (May 30, 2021): 1094. http://dx.doi.org/10.1149/ma2021-01341094mtgabs.

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Yeom, Geun‐Young, Yoshi Ono, and Tad Yamaguchi. "Polysilicon Etchback Plasma Process Using HBr , Cl2, and SF 6 Gas Mixtures for Deep‐Trench Isolation." Journal of The Electrochemical Society 139, no. 2 (February 1, 1992): 575–79. http://dx.doi.org/10.1149/1.2069260.

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Kim, Dong-Hyun, Sora Park, Dawon Jung, Eunsoo Park, Sung-Wook Mhin, and Chan-Woo Lee. "Analysis of structural effect on mechanical stress at backside deep trench isolation using finite element method." Microelectronic Engineering 154 (March 2016): 42–47. http://dx.doi.org/10.1016/j.mee.2016.01.028.

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