Relevant bibliographies by topics / A-SiOx

Academic literature on the topic 'A-SiOx'

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Published: 7 September 2023

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Journal articles on the topic "A-SiOx"

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Li, Feitao, Siyao Wan, Dong Wang, and Peter Schaaf. "Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches." Beilstein Journal of Nanotechnology 14 (January 20, 2023): 133–40. http://dx.doi.org/10.3762/bjnano.14.14.

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This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and it can be enhanced more by Au compared to Ni. SiO gas from the decomposition of SiO2 and the active oxidation of Si is the source of Si for the growth of the SiOx branches of the nanoflowers. The concentration of SiO gas around the decomposition cavities is inhomogeneously distributed. Closer to the cavity border, the concentration of the Si sources is higher, and SiOx branches grow faster. Hence, nanoflowers present shorter and shorter branches as they are getting away from the border. However, such inhomogeneous SiO gas concentration is weakened in the sample with the highest Au concentration due to the strong ability of Au to enhance SiO2 decomposition, and nanoflowers with less difference in their branches can be observed across the whole sample.
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Турищев, С. Ю., В. А. Терехов, Д. А. Коюда, А. В. Ершов, А. И. Машин, Е. В. Паринова, Д. Н. Нестеров, Д. А. Грачев, И. А. Карабанова, and Э. П. Домашевская. "Формирование нанокристаллов кремния в многослойных нанопериодических структурах a-SiO-=SUB=-x-=/SUB=-/диэлектрик по результатам синхротронных исследований." Физика и техника полупроводников 51, no. 3 (2017): 363. http://dx.doi.org/10.21883/ftp.2017.03.44208.8374.

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Изучен вопрос эффективности контролируемого формирования массивов кремниевых наночастиц на основе детальных исследований электронного строения многослойных нанопериодических структур a-SiOx/SiO2, a-SiOx/Al2O3 и a-SiOx/ZrO2. С применением синхротронного метода спектроскопии ближней тонкой структуры края рентгеновского поглощения обнаружена модификация исследованных структур под влиянием высокотемпературного отжига при максимальной температуре 1100oC, объясняемая образованием нанокристаллов кремния в слоях светоизлучающих многослойных структур. DOI: 10.21883/FTP.2017.03.44208.8374
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Ramesh, P. D., and K. J. Rao. "Carbothermal reduction and nitridation reaction of SiOx and preoxidized SiOx: Formation of α-Si3N4 fibers." Journal of Materials Research 9, no. 9 (September 1994): 2330–40. http://dx.doi.org/10.1557/jmr.1994.2330.

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The chemical composition of amorphous SiOx has been analyzed by oxidation studies and is found to be SiO1.7. SiO1.7 appears to be a monophasic amorphous material on the basis of 29Si nuclear magnetic resonance, high resolution electron microscopy, and comparative behavior of a physical mixture of Si and SiO2. Carbothermal reduction and nitridation reactions have been carried out on amorphous SiO1.7 and on amorphous SiO2 obtained from oxidation of SiO1.7. At 1623 K reactions of SiO1.7 lead exclusively to the formation of Si2N2O, while those of SiO2 lead exclusively to the formation of Si3N4. Formation of copious fibers of α-Si3N4 was observed in the latter reaction. It is suggested that the partial pressure of SiO in equilibrium with reduced SiO1.7 and SiO2 during the reaction is the crucial factor that determines the chemistry of the products. The differences in the structures of SiO2 and SiO1.7 have been considered to be the origin of the differences in the SiO partial pressures of the reduction products formed prior to nitridation. The effect of the ratios, C:SiO1.7 and C:SiO2, in the reaction mixture as well as the effect of the temperature on the course of the reactions have also been investigated.
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Delimitis, A., S. D. Pappas, S. Grammatikopoulos, Panagiotis Poulopoulos, Vassilios Kapaklis, D. Trachylis, and C. Politis. "Microstructural Investigation of SiOx Thin Films Grown by Reactive Sputtering on (001) Si Substrates." Journal of Nano Research 17 (February 2012): 147–56. http://dx.doi.org/10.4028/www.scientific.net/jnanor.17.147.

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In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.
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Перевалов, Т. В., В. А. Володин, Ю. Н. Новиков, Г. Н. Камаев, В. А. Гриценко, and И. П. Просвирин. "Наноразмерные флуктуации потенциала в SiO-=SUB=-x-=/SUB=-, синтезированном плазмохимическим осаждением." Физика твердого тела 61, no. 12 (2019): 2528. http://dx.doi.org/10.21883/ftt.2019.12.48589.552.

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The atomic structure and electron spectrum of a-SiOx:H films deposited on silicon and glass substrates by the plasma enhanced chemical vapor deposition method are considered in this paper. The film stoichiometric parameter «x» varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. The film structures and the electronic structure peculiarities characterization, depending on the parameter «x» value, were carried out using a set of structural and optical techniques, as well as the ab initio quantum-chemical simulation for the model SiOx structure. It was established that the studied SiOx:H films mainly consist of silicon suboxide SiOy with SiO2 and amorphous Si clusters. Based on the spatial chemical composition fluctuations, the electron and hole potential fluctuations model for SiOx is proposed. The obtained results will allow a more accurate charge transport modeling in a-SiOx:H films, which is important for creating nonvolatile memory and memristor elements on the base of SiOx.
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CZARNACKA, Karolina. "Zmiennoprądowe właściwości dielektryczne materiałów nanowarstwowych a-SiOx/SiO2." PRZEGLĄD ELEKTROTECHNICZNY 1, no. 8 (August 5, 2018): 61–64. http://dx.doi.org/10.15199/48.2018.08.16.

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Parka, Chan Hwi, Kyung Sub Leeb, and Dong Wook Shina. "Fabrication of Silicon Oxide Base Powders for Anode of Lithium Ion Battery by Hydrolysis Flame Synthesis." Advanced Materials Research 811 (September 2013): 98–103. http://dx.doi.org/10.4028/www.scientific.net/amr.811.98.

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SiOx based composite powders were fabricated by flame hydrolysis synthesis method employing an oxygen-hydrogen flame torch. The SiCl4 gas was used as a precursor and carried into the central tube of the torch by dry Ar gas. As-synthesized SiOx based composite powders had spherical shape with the size of about 3040 nm. To control the structure of the incompletely oxidized SiOx based composite powders, the as-synthesized SiOx based composite powders were heat-treated under 5 % H2 and 95 % Ar mixed gas atmosphere at a temperature of 1000 °C to 1400 °C for 3h. The properties of as-synthesized and post heat-treated SiOx based composite powders at various temperatures were investigated by XRD, TEM, SEM, FT-IR and XPS analysis. And through the post-treatment effects, structural controlled the incomplete oxidized SiOx based composite powders. The formed particles in SiOx based powders had sphere shape and the size of 30 ~ 40 nm. TEM analysis revealed that the amorphous phase and crystalline phase were mixed in SiOx based composite powders by post-heat treatment. And the Si and SiO2 crystalline phases were detected in amorphous phase.
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Shin, Young Chul, Eun Hong Kim, and Tae Geun Kim. "EUROPIUM SILICATE THIN FILMS FABRICATED BY RF MAGNETRON SPUTTERING AND THERMAL TREATMENT." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (November 15, 2017): 147–52. http://dx.doi.org/10.29037/ajstd.195.

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We report the fabrication and optical characteristics of europium silicate thin films. Layer structures of Eu2O3/SiOX/Si (100) were deposited by an rf-sputtering method and annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of SiOX layer: One was deposited by sputtering using SiO2 target (Ar gas at a rate of 50 sccm) and the other was deposited by reactive sputtering using Si target (Ar gas at a rate of 45 sccm, with an O2 gas at a rate of 5 sccm). Photoluminescence peak at 430 nm was observed in the sample composed of SiOx interlayer sputtered from SiO2 target. In comparison, PL peak at 570 nm was observed in the other sample, the SiOx layer of which was deposited by reactive sputtering from Si target. The compositional distributions of these samples were analyzed by X-ray photoelectron spectroscopy (XPS).
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Iskhakzay, R. M. Kh, V. N. Kruchinin, V. Sh Aliev, V. A. Gritsenko, E. V. Dementieva, and M. V. Zamoryanskaya. "Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance." Russian Microelectronics 51, no. 1 (February 2022): 24–35. http://dx.doi.org/10.1134/s1063739721060081.

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Abstract Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation.
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Kawasaki, Masahiro, Masateru Nose, Ichiro Onishi, and Makoto Shiojiri. "Structural Investigation of AlN/SiOx Nanocomposite Hard Coatings Fabricated by Differential Pumping Cosputtering." Microscopy and Microanalysis 22, no. 3 (April 12, 2016): 673–78. http://dx.doi.org/10.1017/s1431927616000611.

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AbstractAlN/SiOx nanocomposite coatings fabricated by differential pumping cosputtering (DPCS) were investigated by analytical electron microscopy. The DPCS system consists of two halves of a Chamber, A and B, for radio frequency (RF) magnetron sputtering deposition of different materials, and a substrate holder that rotates through the chambers. Al and SiO2 were sputtered in gas environments with a flow mixture of N2 and Ar gases at RF power of 200 W in the Al Chamber A and a flow of Ar gas at RF powers of 49 W in the SiO2 Chamber B. The substrates of (001) Si wafers heated at 250°C were rotated for 1,080 min at 3 rpm and alternately deposited by AlN and SiO2. AlN columnar crystals grew at a rate of ~0.3 nm/revolution preferentially along the hexagonal [0001] axis. Amorphous silicon oxide (a-SiOx), deposited at a rate of ~0.2 nm/revolution, was coagulated preferentially along the boundaries between the AlN columns and also the interfaces between the subgrains within the AlN columns. The a-SiOx played an important role in the increase in mechanical hardness of the AlN/SiOx composite coating by disturbing deformation of AlN crystal lattices.
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Dissertations / Theses on the topic "A-SiOx"

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Ribeiro, Rafael Parra. "Efeito do tratamento de oxidação a plasma na produção de uma bicamada SiOx/SiOxCyHz." Universidade Estadual Paulista (UNESP), 2017. http://hdl.handle.net/11449/152465.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Devido às suas propriedades mecânicas, soldabilidade e baixo custo, o aço carbono é um material amplamente utilizado nos mais diversos setores. Entretanto, o aço carbono é facilmente oxidado quando exposto ao ambiente. Para evitar esse problema, alguns trabalhos sugerem o desenvolvimento de revestimentos protetivos utilizando técnicas de deposição a plasma baseadas no composto hexametildisiloxano, HMDSO. A partir deste composto podese obter desde estruturas organosilicones até as inorgânicas pela alteração dos parâmetros de deposição. Revestimentos tipo óxido de silício são mais resistentes à corrosão que os organosilicones, porém sua estabilidade física é menor. Com o objetivo de associar as propriedades favoráveis de ambos os tipos de revestimentos, investigou-se, no presente trabalho, a possibilidade de revestir o aço carbono com sistemas bicamadas SiOx/SiOxCyHz através da combinação de metodologia de deposição e oxidação em plasmas de baixa pressão. Para tanto, filmes do tipo SiOxCyHz foram depositados a plasma de mistura de HMDSO (70%), O2 (20%) e Ar (10%) excitado por radiofrequência (150 W). A pressão total da atmosfera de deposição foi de 20 Pa. Os filmes foram depositados por 30 min e, posteriormente, expostos a plasmas de O2 (3,3 Pa, 10-300 W, 60 min) com o objetivo de criar uma camada superficial inorgânica. Foram investigados os efeitos da potência de excitação do plasma de O2 na espessura de camada, estrutura química e composição elementar das amostras. Avaliou-se também o efeito da potência do plasma de oxidação nas propriedades de barreira do revestimento depositado sobre aço carbono. Filmes como-depositados foram caracterizados como organosilicones. A exposição ao plasma de oxigênio foi observada remover hidrogênio, carbono e grupos metil da estrutura transformando-a em óxido de silício, sendo, todavia, o grau de conversão e a espessura da camada convertida fortemente dependentes da potência do plasma de oxidação. A resistência do sistema preparado sobre o aço carbono à corrosão foi observada depender da espessura final da camada e também da conectividade da estrutura convertida em sílica mais que do grau de conversão. A condição de tratamento eleita como ótima neste trabalho foi a conduzida com 50 W de potência por criar uma camada superficial inorgânica fina, compacta, com uma estrutura superficial similar a da sílica além de preservar a espessura do filme e aumentar as propriedades de barreira do sistema.
Due to its mechanical properties, welding and low cost, carbon steel is a material widely used in several sectors. However, carbon steel is easily oxidized when exposed to the environment. To avoid this problem, some work suggests the development of protective coating using plasma deposition techniques based on the compound hexamethyldisiloxane, HMDSO. From this compound it is possible to obtain from organosilicones structures to inorganic by changing the parameters of deposition. Silicon oxide type coatings are more resistant to corrosion than organosilicones, but their physical stability is lower. With the objective of associating the favorable properties of both types of coatings, the present work investigated the possibility of coating the carbon steel with SiOx/SiOxCyHz bilayer systems through the combination of deposition and oxidation methodology in low pressure plasmas. For that, SiOxCyHz films were deposited in a mixture plasma of HMDSO (70%), O2 (20%) and Ar (10%) excited by radiofrequency (150 W). The total pressure of the atmosphere of deposition was 20 Pa. The films were deposited for 30 min and subsequently exposed to O2 plasmas (3.3 Pa, 10-300 W, 60 min) to create an inorganic surface layer. The effects of the excitation power of the O2 plasma on the layer thickness, chemical structure and elemental composition of the samples were investigated. The effect of the oxidation plasma power was also evaluated in the barrier properties of the coating deposited on carbon steel. As-deposited films were characterized as organosilicones. Exposure to oxygen plasma was observed to remove hydrogen, carbon and methyl groups from the structure transforming it into a silicon oxide, however, the degree of conversion and the thickness of the converted layer is strongly dependent on the power of the oxidation plasma. The corrosion resistance of the system prepared on carbon steel was observed to depend on the final thickness of the layer and also on the connectivity of the structure converted to silica rather than the degree of conversion. The treatment condition chosen as optimal in this work was the one conducted with 50 W of power by creating a thin, compact, inorganic surface layer with a silica-like surface structure in addition to preserving the film thickness and increasing the barrier properties of the system.
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Queiroz, José Renato Cavalcanti de [UNESP]. "Filmes de SiOx crescidos em substrato de zircônia tetragonal policristalina estabilizada por ítria: influência na durabilidade da adesão a cimentos resinosos." Universidade Estadual Paulista (UNESP), 2011. http://hdl.handle.net/11449/105537.

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Este estudo comparou o efeito de filmes à base de Si depositados pela técnica reactive magnetron sputtering com o uso do jateamento de partículas de alumina e a aplicação de primer na adesão de cimentos resinoso a superfície de zircônia. Blocos de zirconia (N=300) (4,5×4,5)mm foram sinterizados e regularizados com lixas de SiC (1200), sonicamente limpos com água destilada por 10 min e randomicamente divididos em 30 grupos (n=10) de acordo com 3 parâmetros: 1- cimento resinoso (Panavia/Kuraray; Multilink/Ivoclar; RelyX U100/3M); 2- tratamento de superfície (sem tratamentocontrole, Metal/Zirconia Primer, jateamento com partículas + Metal/Zirconia Primer, Filme A + Monobond S; Filme B + Monobond S); 3- termociclagem (TC). Parâmetros de rugosidade da superfície (Ra, Rz, Sdr) foram avaliados por Microscopia de Interferência e Microscopia Eletrônica de Varredura (MEV). Cilindros de cimento resinoso foram construídos (Ø: 2,4 mm; altura: 2 mm) sobre a superfície de zirconia. O ensaio de resistência adesiva ao cisalhamento foi realizado no momento inicial (24 h) e após a termociclagem (5o- 55oC, 6.000 ciclos) utilizando máquina de ensaio universal (1 mm/min). As superfícies fraturadas foram analisadas por microscopia ótica (30×) e MEV (100× e 2000×) para categorizar o modo de falha. Adicionais blocos de zirconia (15×15)mm confeccionados para análises por Espectroscopia por Retroespalhamento de Rutheford (RBS), e Trabalho de Adesão (WA) após os tratamentos de superfície. Os dados foram estatisticamente analisados por Anova 3-fatores e 11 teste Tukey (5%). Fotomicrografias revelaram microdefeitos nos filmes. Os resultados de Wa mostraram que os filmes melhoraram a molhabilidade da superfície. As análises por RBS mostraram que a concentração elementar dos filmes...
This study compared the effect of si-based nanofilm deposition using reactive magnetron sputtering to application of air-abrasion (alumina particles) and zirconia primers on the adhesion of resin cements to zirconia. Zirconia (Nblocks=300) (4.5 mm × 3.5 mm × 4.5 mm) were sintered, ground finished to 1200 SiC paper and cleaned ultrasonically in distilled water for 10 min. The blocks were randomly divided into 30 groups (n=10) according to 3 testing parameters: 1- Resin Cements (Panavia/Kuraray; Multilink/Ivoclar; RelyX U100/3M); 2- Surface conditioning (no conditioning-control, Metal/Zirconia Primer, air-abrasion + Metal/Zirconia Primer, Sibased film A + Monobond S; Si-based film B + Monobond S); 3- Aging (with and without). Surface roughness parameters (Ra, Rz, Sdr) before and after surface conditioning were evaluated using interference microscopy (IM). Rutheford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), and Work of Adhesion (WA) analyses were performed after surface treatments. Resin cements were incrementally built up (Ø: 2.4 mm; height: 4 mm) on the zirconia surfaces. Bonded specimens were then thermocycled (5o-55oC, 6,000 cycles). Shear bond strength (SBS) was performed using the Universal Testing Machine (1 mm/min). After fracture, the surfaces were analyzed using an optical microscopy (30 ×), SEM (100 × and 2000 ×) to categorize the failure modes. The data were statistically evaluated using 3-way ANOVA and Tukey's test (5%). Scanning Electron Microscopy showed micro defects on Si-based nanofilms surface. The result to Wa showed that surface coated with Si-based nanofilms improved wetability when compared to the other surface treatments. RBS analysis showed that was produced films with different chemical elemental concentration. While air-abraded... (Complete abstract click electronic access below)
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Queiroz, José Renato Cavalcanti de. "Filmes de SiOx crescidos em substrato de zircônia tetragonal policristalina estabilizada por ítria : influência na durabilidade da adesão a cimentos resinosos /." São José dos Campos : [s.n.], 2011. http://hdl.handle.net/11449/105537.

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Orientador: Lafayette Nogueira Júnior
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Banca: Marco Cícero Bottino
Resumo: Este estudo comparou o efeito de filmes à base de Si depositados pela técnica reactive magnetron sputtering com o uso do jateamento de partículas de alumina e a aplicação de primer na adesão de cimentos resinoso a superfície de zircônia. Blocos de zirconia (N=300) (4,5×4,5)mm foram sinterizados e regularizados com lixas de SiC (1200), sonicamente limpos com água destilada por 10 min e randomicamente divididos em 30 grupos (n=10) de acordo com 3 parâmetros: 1- cimento resinoso (Panavia/Kuraray; Multilink/Ivoclar; RelyX U100/3M); 2- tratamento de superfície (sem tratamentocontrole, Metal/Zirconia Primer, jateamento com partículas + Metal/Zirconia Primer, Filme A + Monobond S; Filme B + Monobond S); 3- termociclagem (TC). Parâmetros de rugosidade da superfície (Ra, Rz, Sdr) foram avaliados por Microscopia de Interferência e Microscopia Eletrônica de Varredura (MEV). Cilindros de cimento resinoso foram construídos (Ø: 2,4 mm; altura: 2 mm) sobre a superfície de zirconia. O ensaio de resistência adesiva ao cisalhamento foi realizado no momento inicial (24 h) e após a termociclagem (5o- 55oC, 6.000 ciclos) utilizando máquina de ensaio universal (1 mm/min). As superfícies fraturadas foram analisadas por microscopia ótica (30×) e MEV (100× e 2000×) para categorizar o modo de falha. Adicionais blocos de zirconia (15×15)mm confeccionados para análises por Espectroscopia por Retroespalhamento de Rutheford (RBS), e Trabalho de Adesão (WA) após os tratamentos de superfície. Os dados foram estatisticamente analisados por Anova 3-fatores e 11 teste Tukey (5%). Fotomicrografias revelaram microdefeitos nos filmes. Os resultados de Wa mostraram que os filmes melhoraram a molhabilidade da superfície. As análises por RBS mostraram que a concentração elementar dos filmes... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: This study compared the effect of si-based nanofilm deposition using reactive magnetron sputtering to application of air-abrasion (alumina particles) and zirconia primers on the adhesion of resin cements to zirconia. Zirconia (Nblocks=300) (4.5 mm × 3.5 mm × 4.5 mm) were sintered, ground finished to 1200 SiC paper and cleaned ultrasonically in distilled water for 10 min. The blocks were randomly divided into 30 groups (n=10) according to 3 testing parameters: 1- Resin Cements (Panavia/Kuraray; Multilink/Ivoclar; RelyX U100/3M); 2- Surface conditioning (no conditioning-control, Metal/Zirconia Primer, air-abrasion + Metal/Zirconia Primer, Sibased film A + Monobond S; Si-based film B + Monobond S); 3- Aging (with and without). Surface roughness parameters (Ra, Rz, Sdr) before and after surface conditioning were evaluated using interference microscopy (IM). Rutheford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), and Work of Adhesion (WA) analyses were performed after surface treatments. Resin cements were incrementally built up (Ø: 2.4 mm; height: 4 mm) on the zirconia surfaces. Bonded specimens were then thermocycled (5o-55oC, 6,000 cycles). Shear bond strength (SBS) was performed using the Universal Testing Machine (1 mm/min). After fracture, the surfaces were analyzed using an optical microscopy (30 ×), SEM (100 × and 2000 ×) to categorize the failure modes. The data were statistically evaluated using 3-way ANOVA and Tukey's test (5%). Scanning Electron Microscopy showed micro defects on Si-based nanofilms surface. The result to Wa showed that surface coated with Si-based nanofilms improved wetability when compared to the other surface treatments. RBS analysis showed that was produced films with different chemical elemental concentration. While air-abraded... (Complete abstract click electronic access below)
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Dresch, Mauro André. "Aplicação de catalisadores PtSn/C e membranas Nafion-SiO2 em células a combustível de etanol direto em elevadas temperaturas." Universidade de São Paulo, 2014. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-06102014-102906/.

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Este trabalho teve como objetivo a combinação de ânodos e eletrólitos otimizados, para a formação de células a combustível de etanol direto (DEFC), operantes em elevadas temperaturas (130 ºC). Como materiais de ânodo, foram produzidos eletrocatalisadores baseados em PtSn/C, com diversas razões atômicas Pt:Sn, preparados pelo método do poliol modificado, essa metodologia possibilita a produção de eletrocatalisadores auto-organizados com estreita distribuição de tamanhos de partículas e elevado grau de liga. Os eletrocatalisadores foram caracterizados por DRX e stripping de CO. Os resultados mostraram que esses materiais apresentaram elevado grau de liga e Eonset de oxidação de CO em potenciais menores do que os materiais comerciais. Como eletrólito, foram sintetizados híbridos Nafion-SiO2 com a incorporação do óxido diretamente nos agregados iônicos de diversos tipos de membranas Nafion. Os parâmetros de síntese, tais como o solvente em meio solgel, a espessura da membrana, e a concentração do precursor de sílica foram avaliados em termos do percentual de sílica incorporada e da estabilidade mecânica do híbrido. Por fim, ânodos e eletrólitos otimizados foram avaliados em DEFCs nas temperaturas de 80 e 130 ºC. Os resultados mostraram um significativo incremento no desempenho de polarização (122 mW cm-2), resultado da aceleração na taxa de oxidação de etanol devido ao material de ânodo otimizado e do aumento de temperatura de operação, uma vez que o uso de eletrólitos híbridos possibilita o aumento da temperatura sem perdas de condutividade. Nesse sentido, a combinação de eletrodos e eletrólitos otimizados é uma alternativa promissora para o desenvolvimento de tais dispositivos.
This work has as objective to evaluate anodes and electrolytes in direct ethanol fuel cells (DEFC) operating at high temperature (130 ºC). As anode materials, electrocatalysts based on PtSn/C were prepared by Modified Polyol Method with various Pt:Sn atomic ratios. Such methodology promotes selforganized electrocatalysts production with narrow particle size distribution and high alloying degree. The eletrocatalysts were characterized by XRD, and CO stripping. The results showed that these materials presented high alloying degree and Eonset CO oxidation at lower potential as commercial materials. As electrolyte, Nafion-SiO2 hybrids were synthesized by sol-gel reaction, by the incorporation of oxide directly into the ionic aggregates of various kinds of Nafion membranes. The synthesis parameter, such sol-gel solvent, membrane thickness and silicon precursor concentration were studied in terms of silica incorporation degree and hybrid mechanical stability. Finally, the optimized anodes and electrolytes were evaluated in DEFC operating at 80 130 ºC temperature range. The results showed a significant improvement of the DEFC performance (122 mW cm-2), resulted from the acceleration of ethanol oxidation reaction rate due to anode material optimization and high temperature operation once the use of hybrids possibilities the increase of temperature without a significant conductivity loses. In this sense, the combination of optimized electrodes and electrolytes are a promising alternative for the development of these devices.
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Dresch, Mauro André. "Síntese e caracterizção eletroquímica de membranas híbridas Nafion-SIO2 para a aplicação como eletrólito polimérico em células a combustível tipo PEM." Universidade de São Paulo, 2009. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-26092011-141218/.

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Neste trabalho foi estudado o efeito dos parâmetros de síntese na resposta de polarização de híbridos Nafion-SiO2 como eletrólitos em células a combustível poliméricas (PEMFC) em elevadas temperaturas (até 130 °C). A fase inorgânica foi adicionada à matriz polimérica com o objetivo de aumentar a retenção de água na membrana em elevadas temperaturas (acima de 100 °C); melhorar as propriedades mecânicas do Nafion e favorecer cineticamente as reações eletródicas. As membranas foram preparadas a partir da incorporação in-situ de sílica em membranas comerciais de Nafion por rota sol-gel acompanhada de catálise ácida. Os parâmetros de síntese, tais como: concentração do catalisador ácido, natureza do solvente, temperatura e tempo de reação e concentração do precursor de silício (Tetraetil-Ortosilicato TEOS) foram avaliados em função do grau de incorporação e resposta de polarização. Os híbridos Nafion-SiO2 foram física e quimicamente caracterizados por gravimetria, termogravimetria (TG), microscopia eletrônica de varredura e espectroscopia de energia dispersiva de raios X (MEV-EDX), espectroscopia de impedância eletroquímica (EIS) e espalhamento de raios X em baixos ângulos (SAXS). Por fim, os híbridos sintetizados foram avaliados diretamente como eletrólitos em células PEM unitárias alimentadas com hidrogênio (H2) e oxigênio (O2) no intervalo de temperatura de 80 ºC a 130 ºC e a 130 ºC em condições de umidade relativa reduzida (75 e 50%). Resumidamente, o desempenho dos híbridos se mostrou fortemente dependente dos parâmetros de síntese, principalmente, o tipo de álcool utilizado e concentração inicial de TEOS.
In this work, the effect of sol-gel synthesis parameters on the preparation and polarization response of Nafion-SiO2 hybrids as electrolytes for proton exchange membrane fuel cells (PEMFC) operating at high temperatures (130 oC) was evaluated. The inorganic phase was incorporated in a Nafion matrix with the following purposes: to improve the Nafion water uptake at high temperatures (> 100 oC); to increase the mechanical strength of Nafion and; to accelerate the electrode reactions. The hybrids were prepared by an in-situ incorporation of silica into commercial Nafion membranes using an acid-catalyzed sol-gel route. The effects of synthesis parameters, such as catalyst concentration, sol-gel solvent, temperature and time of both hydrolysis and condensation reactions, and silicon precursor concentration (Tetraethylorthosilicate TEOS), were evaluated as a function on the incorporation degree and polarization response. Nafion-SiO2 hybrids were characterized by gravimetry, thermogravimetric analysis (TGA), scanning electron microscopy and X-ray dispersive energy (SEM-EDS), electrochemical impedance spectroscopy (EIS), and X-ray small angle scattering (SAXS). The hybrids were tested as electrolyte in single H2/O2 fuel cells in the temperature range of 80 130 oC and at 130 oC and reduced relative humidity (75% and 50%). Summarily, the hybrid performance showed to be strongly dependent on the synthesis parameters, mainly, the type of alcohol and the TEOS concentration.
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6

Vecchi, Pierpaolo. "Caratterizzazione elettrica e spettroscopia superficiale di film sottili a base di silicio." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2018. http://amslaurea.unibo.it/16338/.

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Questa tesi presenta la misura di proprietà elettriche e ottiche di film sottili a base di Si, in particolare ossinitruri di silicio (a-SiOxNy) e ossidi di silicio (a-SiOx) sub-stechiometrici. Questi materiali trovano applicazione nelle celle solari ad eterogiunzione in Si con due funzioni: strato passivante e contatto elettrico. Il silicio amorfo idrogenato, sia intrinseco che drogato, utilizzato finora per buffer layer ed emettitore, presenta assorbimento parassita della luce, ma l'introduzione di carbonio, azoto e/o ossigeno amplia il bandgap del materiale e ostacola la fotogenerazione di cariche. I campioni depositati con PECVD, con tutti i flussi costanti e variando quelli di N2O e CO2, hanno proprietà ottiche ed elettriche migliori del Si amorfo. Sono state depositate due serie con silano e CO2 per a-SiOx, silano e N2O per a-SiOxNy. In altre due serie è stato aggiunto anche diborano, per ottenere silicio drogato boro. Sono state effettuate misure di corrente-tensione su campioni depositati su vetro borosilicato (per eliminare la componente spuria del substrato nella misura della resistività) e misure di surface photovoltage (SPV) su campioni depositati su c-Si drogato boro per individuare bandgap dei materiali e qualità dell’interfaccia layer-substrato. È risultato che i campioni con boro hanno conduttività maggiore dei rispettivi campioni intrinseci, ma non ad alte concentrazioni di azoto e ossigeno, che causano aumento del disordine reticolare e ostacolano l’attivazione del drogante. Il carbonio, invece, introdotto nel materiale solo per alti flussi di CO2, agisce probabilmente come drogante e promuove l’aumento della conducibilità elettrica. Le misure SPV hanno individuato il bandgap del silicio amorfo intorno a 1.8 eV. È stato inoltre possibile vedere transizioni energetiche dovute ad altre fasi presenti nel materiale. Indagando un diverso range di energia è stato possibile studiare la qualità dell’interfaccia con il substrato.
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7

McConkie, Thomas O. "Curious Growth of a Buried SiO2 Layer." BYU ScholarsArchive, 2012. https://scholarsarchive.byu.edu/etd/3755.

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Initial investigation of Moxtek wire grid polarizers composed of Al and coated with SiO2 - SiX - SiO2 (where SiX is used to indicate a Si rich layer whose complete composition is not to be disclosed for proprietary reasons) showed a growth of 3x in the inner (closest to Al) SiO2 layer after baking. Upon removing the X and varying rib composition and layering composition and geometries in 12 sets of before and after samples, no obvious growth was observed. Even baking the original unbaked sample yielded no growth. Our data suggest that the initial conclusion of buried oxide growth was flawed and that the observed changes in optical properties upon baking are either very sensitive to layer thicknesses (smaller than we can confidently observe) or due to some other mechanism. Here we present our sample preparation and analysis using the Focused Ion Beam (FIB), Scanning Transmission Electron Microscopy (STEM), and Energy Dispersive Xray Spectroscopy (EDXS).
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8

Quiroga, Jean-Manuel. "Étude des propriétés optiques de multicouches a-Si:H/a-SiO2." Grenoble 1, 1998. http://www.theses.fr/1998GRE10124.

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L'etude porte sur les proprietes optiques de puits nanometriques multiples a-si:h/a-sio#2 elabores par pecvd (he+sih#4+o#2). Les caracteristiques des materiaux de reference sont determinees par diverses techniques de spectroscopie optique. Nous montrons la necessite de simuler les spectres en tenant compte des reflexions multiples afin d'eviter des erreurs importantes sur la valeur du coefficient d'absorption. Des mesures in situ de la teneur en oxygene dans le plasma nous ont permis de determiner une procedure de depot des multicouches reduisant la largeur des interfaces. La modulation de la composition chimique dans l'epaisseur est observee par des mesures de met, de rayons x et de spectrometrie infrarouge. La simulation des spectres de transmission infrarouge de la multicouche consideree comme un milieu effectif montre que l'interface a-sio#2/a-si:h est la plus large. La variation de l'epaisseur des motifs pour des series de multicouches de largeur de puits (d#a#-#s#i#:#h) ou de barriere constante permet d'elaborer des profils-modele de la composition d'oxygene en epaisseur x(d) en tenant compte de la reduction de la couche de silice et de l'oxydation de celle du silicium amorphe par le plasma lors du depot des couches ulterieures. Nous presentons enfin les mesures d'absorption et de photoluminescence des multicouches. La reduction de la largeur du puits conduit a une augmentation apparente du gap (e#g) mais une analyse plus fine s'appuyant sur le modele physico-chimique montre que la valeur apparente de e#g ne correspond pas a la separation minimale entre les bandes de valence et de conduction. Une emission de lumiere visible a l'il a temperature ambiante est observee pour des largeurs de puits nominales inferieures a 20a. Contrairement aux predictions du modele de confinement quantique, la position du pic de photoluminescence est independante de d#a#-#s#i#:#h. Nous concluons que la presence de sous-oxydes au fond du puits est a l'origine de l'emission observee.
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9

Andrade, Gessie Maria Silva de. "Oxidação parcial de metano a compostos oxigenados (HCHO e CH3OH) sobre catalizadores oxidos MoOx/MgO-SiO2 e VOx-SiO2." [s.n.], 2003. http://repositorio.unicamp.br/jspui/handle/REPOSIP/267468.

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Orientador: Gustavo Paim Valença
Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Quimica
Made available in DSpace on 2018-08-03T15:05:56Z (GMT). No. of bitstreams: 1 Andrade_GessieMariaSilvade_D.pdf: 4290187 bytes, checksum: 47225a8be4e7efef0f24ffcc5f20c025 (MD5) Previous issue date: 2003
Resumo: A utilização cada vez maior do gás natural como combustível deve-se ao aumento da demanda de energia nos países em crescimento acompanhado da disponibilidade crescente das reservas de gás em relação às de petróleo, o que pode tomá-Io uma fonte de energia de grande importância neste século XXI. O metano é o componente presente em maior quantidade no gás natural, constituindo mais de 90% da fração dos hidrocarbonetos. Um dos processos mais utilizados para funcionalização das moléculas de hidrocarbonetos, tais como o metano, é a oxidação parcial. Desta forma, no presente estudo foi realizada a oxidação parcial do metano a compostos oxigenados (HCHO e CH30H) a pressão atmosférica utilizando catalisadores de óxidos redutíveis de MoOx/MgO-Si02 e VOx/MgO-Si02 com a finalidade de investigar a influência da introdução de MgO no suporte dos catalisadores e da concentração superficial de Mo+n e V+n na atividade e seletividade destes catalisadores, assim como o efeito da razão CH4:O2 na cinética desta reação. Os óxidos mistos de MgO- Si02 foram preparados em razões atômicas preestabelecidas (Mg:Si = 1:0, 3:1,2:1, 1:1, 1:3, 1:2 e 0:1), secos e calcinados a 400 K por 12 horas e 1050 K por 5 horas, respectivamente. O método para a introdução da fase ativa Mo ou V nos suportes foi a impregnação incipiente, obedecendo-se seis diferentes percentagens em peso de Mo+6 ou V+5 nos sólidos finais: 0,1%, 1,67%, 2,2 %, 3,25%, 4,82%, 6,4%, os quais foram caracterizados por difração de raios-X, adsorção de N2 e adsorção seletiva de O2. Os principais produtos observados para a reação em estudo foram HCHO, CO, CO2, sendo que HCHO e CH30H (produtos de oxidação parcial) foram favorecidos por altas razões molares de CH4:O2. A formação de CH3OH foi observada em teores moderados de óxidos metálicos (0:l[Mg:Si]/0,I%Mo e 0:1[Mg:Si]/3,25%Mo), os quais apresentaram consideráveis seletividades para esse produto (32% e 18%, respectivamente). Os resultados obtidos para as constantes de velocidade demonstraram que para baixas conversões, a seletividade para HCHO se aproxima de 100%, enquanto a seletividade para CO2 se manteve em valores baixos, próximos de zero, mostrando que em condições diferenciais (conversão de CH4 < 10%) a velocidade de formação de HCHO é maior que a velocidade de formação de CO2
Abstract: Methane is the major component of natural gas, often present as more than 90% of the gas. Current1y it is primarily used as a fuel. In the chemical industry it is used in the production of synthesis gas, hydrogen, and in the manufacture of the halogen derivatives of methane, acetylene, hydrogen cyanide, technical carbon, and many other products. The direct conversion of methane to formaldehyde and methanol in a single catalytic step in sufficient1y high yield would give rise to new opportunities in the conversion of natural gas to other useful fuels and chemicals. Both the homogeneous and heterogeneous processes have been studied under various conditions although progress toward obtaining a yield that would make such a process industrially viable has been very slow. The majority of these studies have involved metal oxide catalysts. In this work, the selective oxidation of methane to oxygenated compounds (HCHO e CH3OH) at atmospheric pressure was studied on MoOxfMgO-SiO2 and VOx/MgO-SiO2. The mixed oxides of magnesia and silica were prepared in different atom ratios (Mg:Si = 1:0, 3:1,2:1, 1:1, 1:3, 1:2 or 0:1), dried at 400 K for 12 h and calcined at 1050 K for 5 h. The active phase, Mo (H24Mo7N6O24) or V (H4NO3 V), was added to the supports by the incipient wetness method. The percentages of Mo or V added to the mixed oxides were 0,1%, 1,67%,2,2%,3,25%,4,82% or 6,4%. The solids were characterized by X-ray diffraction, BET surface area and oxygen chemisorption. The objective of the present work was to study the influence of the introduction of MgO in the supports, of the amount of Mo and V on the surface of the supports and of the CH4:O2 molar ratios. Both supported Mo and V oxides were active in the conversion of methane to C1-oxygenates and Cox. The main products of the oxidation reaction were HCHO, CO and CO2. The partial oxidation products (HCHO, CH30H) were favored by high CH4:O2 molar ratios and formaldehyde was the first oxidation product, which was further oxidized to CO. The vanadium oxide catalysts were more active than the molybdenum oxide catalysts in conversion of methane. However, the higher reaction rate also resulted in a further oxidation of HCHO to CO
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Desenvolvimento de Processos Químicos
Doutor em Engenharia Química
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10

Soares, Liliana do Amaral. "Cu/SiO2 : catalisador reciclável para a síntese one pot de triazóis." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2013. http://hdl.handle.net/10183/97958.

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A procura por novas tecnologias tem movido a ciência em todos seus setores. Na química um campo tecnológico que tem sido muito procurado nos últimos tempos é o dos compostos miméticos de produtos naturais. A busca de métodos simples e eficientes de síntese veio ao encontro desta busca com a click chemistry e sua cicloadição 1,3-dipolar catalisada por cobre, com a qual é possível a síntese de 1,2,3-triazóis-1,4-dissubtituídos de forma rápida e eficiente. Neste trabalho foi produzido um novo catalisador de cobre através do método sol-gel denominado Cu-sílica e testado o mesmo na cicloadição 1,3-dipolar frente a diferentes substratos e fontes de energia. Quando utilizados brometos de benzila em sistema one pot multicomponete obtivemos rendimentos de até 95% em sistema com fonte de calor após 12 horas de reação ou irradiação por microondas durante 10 minutos. Com o uso de ácidos borônicos azida e acetinelos como substrato chegamos a rendimentos de 91% com aquecimento e um tempo reacional de 48 horas a 50º C, outras fontes de energia não lograram êxito para este substrato. Finalmente foi desenvolveida uma metodologia one pot para síntese dos 1,2,3-triazóis a partir de álcoois, esta consiste de um sistema em 2 etapas reacionais que englobam três tranformações em 25 horas de reação com rendimento de 60%.
The search for new technologies has inspired the science in all areas of chemistry and one of the most studied research fields lays on the search for natural product's mimetics. A good example, among different efforts for simple and efficient new methods of synthesis, is the click chemistry and its Cu catalysed 1,3-dipolar cycloaddition, once this reaction permits quick acess to 1,4-disubstituted-1,2,3-triazoles. In this work we synthesized a copper catalyst through the sol-gel methodology, so called Cu-silica and tested it in the 1,3-cycloaddition reaction, using different starting materials and energy sources. At first we applied this catalyst in a multicomponent reaction in which benzyl bromides, sodium azide and different acetylenes and the reaction was heated for 12 hours or 10 minutes under microwave irradiation (50W), providing the 1,2,3-triazoles with 95% of yield. Further we changed the benzyl halides for boronic acids; we didn’t have success using non-classical heating systems (microwave or ultrasound), however under traditional heating at 50º C for 48 hours we got the product in 91% yield. Finally we developed a new one-pot metodology to obtain 1,2,3-triazoles from alchools. This procedure consists in a two-step continuous system embracing three transformations wihtin 25 hours with an overall yield of 60%.
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Books on the topic "A-SiOx"

1

Morris, Eleri Llewelyn. Siom a sioc. Aberystwyth: Canolfan Astudiaethau Addysg, 2000.

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A Sioux chronicle. Norman: University of Oklahoma Press, 1993.

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Siom, syndod a sws. Llanrwst: Carreg Gwalch, 2005.

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Holley, Latza Jodi, ed. Sioux Falls: A photographic journal. Sioux Falls, SD: PeopleScapes, 2007.

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translator, Whelan Luned, ed. Clem: A Bwgan y Sioe. Wernddu, Caerffili: Rily Publications, 2014.

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Dudley, Joseph Iron Eye. Choteau Creek: A Sioux reminiscence. Lincoln: University of Nebraska Press, 1992.

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Dudley, Joseph Iron Eye. Choteau Creek: A Sioux reminiscence. New York: Warner Books, 1994.

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Saliga, Lászlóné. A Magyar Sion és az Új Magyar Sion (1863-1904) repertóriuma. Piliscsaba: PPKE BTK [u.a.], 2007.

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Santella, Andrew. The Lakota Sioux: A true book. New York: Children's Press, 2001.

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Saci, Maria Paola. Ludovico Lazzarelli: Da Elicona a Sion. Roma: Bulzoni, 1999.

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Book chapters on the topic "A-SiOx"

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Hegemann, D., U. Schütz, and C. Oehr. "RF-Plasma Deposition of SiOx and a-C:H as Barrier Coatings on Polymers." In Plasma Processes and Polymers, 23–37. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2005. http://dx.doi.org/10.1002/3527605584.ch2.

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Bialas, Marcin, and Zenon Mróz. "An Energy Model of Segmentation Cracking of SiOx Thin Film on a Polymer Substrate." In Advanced Ceramic Coatings and Interfaces II, 231–42. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2009. http://dx.doi.org/10.1002/9780470339510.ch23.

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Aguilera, Alvaro, Holger Mickler, Julian Kunkel, Michaela Zimmer, Marc Wiedemann, and Ralph Müller-Pfefferkorn. "A Comparison of Trace Compression Methods for Massively Parallel Applications in Context of the SIOX Project." In Tools for High Performance Computing 2013, 91–105. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08144-1_8.

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Raider, S. I. "The Role of SiO in Si Oxidation at a Si-SiO2 Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 35–42. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_4.

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Ravindra, N. M., D. Fathy, O. W. Holland, and J. Narayan. "Si — SiO2 Interfaces — a Hrtem Study." In The Physics and Technology of Amorphous SiO2, 279–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_38.

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Shruthi, M., D. Sendil Vadivu, and Narendran Rajagopalan. "Relationship Management in SIoT: A Survey." In Communication and Intelligent Systems, 515–26. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-2100-3_40.

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Stathis, J. H. "Identification of Native Defects in a-SiO2." In The Physics and Technology of Amorphous SiO2, 141–51. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_17.

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Shahab, Saima, Parul Agarwal, Tabish Mufti, and Ahmed J. Obaid. "SIoT (Social Internet of Things): A Review." In ICT Analysis and Applications, 289–97. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-5655-2_28.

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Markovits, A., and C. Minot. "A theoretical model of the Si/SiO2 interface." In Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, 131–45. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5008-8_10.

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Griscom, David L. "Intrinsic and Extrinsic Point Defects in a-SiO2." In The Physics and Technology of Amorphous SiO2, 125–34. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1031-0_15.

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Conference papers on the topic "A-SiOx"

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Baek, Sungkweon, Sangryol Yang, Jae-young Ahn, Bonyoung Koo, Kihyun Hwang, Siyoung Choi, Chang-Jin Kang, and Joo-Tae Moon. "Characterization of novel SiO2/a-Si/a-SiOx tunnel barrier engineered oxide." In 2010 IEEE International Memory Workshop. IEEE, 2010. http://dx.doi.org/10.1109/imw.2010.5488330.

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Cao, Zhiqiang, Tong-Yi Zhang, and Xin Zhang. "A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-80288.

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Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. The results showed that the as-deposited PECVD SiOx films had a residual stress of −155±17 MPa and a Young’s modulus of 74.8±3.3 GPa.
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Terekhov, Vladimir, Eugene Terukov, Yurii Undalov, Konstantin Barkov, Pavel Seredin, Dmitry Goloshchapov, Igor Zanin, and Evelina Domashevskaya. "THE NANOCRYSTALS SIZE ESTIMATION USING RAMAN SPECTROSCOPY IN A-SIOX:H FILMS AFTER CRYSTALLIZATION OF SILICON NANOCLUSTERS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1577.silicon-2020/126-130.

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The a-SiOx thin films with silicon nanoclusters are currently being actively studied by various laboratories due to the possibility of efficient control of their optical properties, both at the stage of formation and using technological treatments. The presence of excess silicon in such films leads to the growth of nanocrystals during high-temperature annealing, which affects the optical properties of SiOx films, including photoluminescence. Therefore, in this work, we studied the formation of silicon nanocrystals in a-SiOx films during Pulse Photon Annealing (PPA). X-ray diffraction studies of SiOx films with different silicon contents have shown that, upon PPA annealing, arrays of silicon nanocrystals of significantly different average sizes are formed. Moreover, according to the Raman spectroscopy data, PPA does not lead to complete ordering of the structural network of silicon atoms, and some of the atoms, apparently located in small clusters of ~1 nm, retain deviations from interatomic distances and bond angles.
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Phan, Hai Trieu, Nadia Caney, Philippe Marty, Ste´phane Colasson, and Je´roˆme Gavillet. "Flow Boiling of Water on Nanocoated Surfaces in a Microchannel." In ASME 2010 8th International Conference on Nanochannels, Microchannels, and Minichannels collocated with 3rd Joint US-European Fluids Engineering Summer Meeting. ASMEDC, 2010. http://dx.doi.org/10.1115/fedsm-icnmm2010-30478.

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Experiments were performed to study the effects of surface wettability on flow boiling of water at atmospheric pressure. The test channel is a single rectangular channel 0.5 mm high, 5 mm wide and 180 mm long. The mass flux was set at 100 kg/m2 s and the base heat flux varied from 30 to 80 kW/m2. Water enters the test channel under subcooled conditions. The samples are silicone oxide (SiOx), titanium (Ti), diamond-like carbon (DLC) and carbon-doped silicon oxide (SiOC) surfaces with static contact angles of 26°, 49°, 63° and 103°, respectively. The results show significant impacts of surface wettability on heat transfer coefficient.
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Gao, Dejin, Lijie Zhang, Ru Huang, Runsheng Wang, Dongmei Wu, Yongbian Kuang, Yu Tang, Zhe Yu, Albert Z. H. Wang, and Yangyua Wang. "A novel nitrogen-doped SiOx resistive switching memory with low switching voltages." In 2010 Silicon Nanoelectronics Workshop (SNW). IEEE, 2010. http://dx.doi.org/10.1109/snw.2010.5562577.

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Morales-Vilches, Anna Belen, Yevgeniya Larionova, Tobias Wietler, Alexandros Cruz, Lars Korte, Robby Peibst, Rolf Brendel, Rutger Schlatmann, and Bernd Stannowski. "ZnO:Al/a-SiOx front contact for polycrystalline-silicon-on-oxide (POLO) solar cells." In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049279.

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Salles, Caroline Lima, William Nemeth, Harvey Guthrey, Sumit Agarwal, and Paul Stradins. "Controlling pinhole radius and areal density in a-Si/SiOx using metal-assisted chemical etching." In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089213.

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Feldman, Albert, E. N. Farabaugh, and Y. N. Sun. "Stoichiometry of Reactively Evaporated Films." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.tua4.

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If an optical film is not fully oxidized, its refractive index will be different from fully oxidized material, and significant optical absorption may result. In order to ensure full oxidation of oxide films, evaporations are frequently carried out in reactive atmospheres containing significant partial pressures of oxygen. SiOx films provide a convenient system for studying the oxidation state of reactively evaporated films, not only because they are important coating materials,1 but because of structural models have been developed for this system. In this paper, the degree of oxidation of SiOx films, prepared by reactive electron-beam evaporation of Si under different partial pressures of oxygen, has been examined by x-ray photoelectron spectroscopy (XPS). The analysis suggests that the silicon in the films is not as fully oxidized as might be expected on the basis of the measured oxygen content.
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Desrues, Thibaut, Adeline Lanterne, Charles Seron, Sylvain Rousseau, Etienne Pihan, Sebastien Dubois, Gael Borvon, Frank Torregrosa, and Laurent Roux. "Poly-Si/SiOx Passivating Contacts on Both Sides: A Versatile Technology For High Efficiency Solar Cells." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518773.

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Kim, Namsu, Seunghyup Yoo, William Potscavage, Benoit Domercq, Bernard Kippelen, and Samuel Graham. "Fabrication and Characterization of SiOx/Parylene and SiNx/Parylene Thin Film Encapsulation Layers." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33332.

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Successful commercialization of flexible organic electronic devices is largely dependent on proper encapsulation that protects them from permeation of oxygen and water vapor. At present, low permeation encapsulation materials generally consist of multilayer films of organic/inorganic materials which can be deposited by plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and vapor phase deposition. For this study, we report the effective water vapor transmission rates (WVTR) for multilayer thin films consisting of low temperature PECVD deposited SiNx and SiOx combined with a parylene organic layer. The effective WVTR was measured as a function of the number of bilayer pairs using Ca corrosion tests. The effective WVTR at 20 °C and 50% relative humidity [RH] for three bilayer pairs of SiOx/parylene ranged between 4.4–8.0 × 10−4 g/m2/day while SiNx/parylene had a transmission rate 1.3×10−4 g/m2/day. In general, additional layers were found to decrease the permeation rates to as low as 3.9×10−5 g/m2/day, while the SiNx/parylene coatings performed the best overall.
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Reports on the topic "A-SiOx"

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Hudspeth, Matthew, Joe Olles, James Williams, Anirban Mandal, Seth Root, and Seth Vogler. Strength of porous alpha-SiO2 in a shock loaded environment. Office of Scientific and Technical Information (OSTI), August 2019. http://dx.doi.org/10.2172/1762993.

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Maerzke, Katie A., and J. Tinka Gammel. A New Multiphase Equation of State for SiO2. Office of Scientific and Technical Information (OSTI), October 2017. http://dx.doi.org/10.2172/1398902.

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Дядына, Г. А., В. Г. Карпов, and Володимир Миколайович Соловйов. Низкоэнергетические возбуждения в α-SiO2. ФТИ им. А.Ф.Иоффе, 1990. http://dx.doi.org/10.31812/0564/1015.

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Проведено моделирование мягких атомных потенциалов в a-SiO2. Выявлены параметры, определяющие форму атомного потенциала. Изучены микроскопическая структура мягких атомных потенциалов, характерные значения их параметров и картина атомных движений. Установлено, что движение атома кислорода по мягкой моде сопровождается когерентными перемещениями других атомов. Характер движений близок к результатам, установленным по данным нейтронного рассеяния. Когерентные перемещения атомов приводят к возрастанию эффективной массы атомной частицы и плотности колебательных возбуждений (бозонного типа) в мягких одноямных потенциалах.
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Fritz, S. Structural Characterization of a pentacene monolayer on an amorphous SiO2 substrate with grazing incidence x-ray diffraction. Office of Scientific and Technical Information (OSTI), February 2004. http://dx.doi.org/10.2172/826751.

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Дядына, Г. А., В. Г. Карпов, Володимир Миколайович Соловйов, and Виктор Александрович Хрисанов. Флуктуации локальных атомных потенциалов в аморфных веществах. ФТИ им. А.Ф.Иоффе, 1989. http://dx.doi.org/10.31812/0564/1010.

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Произведено исследование флуктуаций локальных атомных потенциалов в некри­сталлическом веществе. Основу исследования составляет моделирование случайной структуры a-SiO2 и a-Si на ЭВМ. Моделирование осуществлялось методом молекуляр­ной динамики. В ансамбле 5x10^3 построенных локальных конфигураций рассчитаны параметры атомных потенциалов. Показано, что значительные флуктуации этих пара­метров обеспечиваются типичными флуктуациями микроскопической структуры. В частности, имеет место широкое распределение констант упругости и кубического ангармонизма для отдельных атомов. Продемонстрировано существование мягких локальных атомных потенциалов, которые являются эффективно одномодовыми и могут быть как одноямными, так и двухъямными. Даны эмпирические формулы, описы­вающие вероятностные распределения случайных параметров мягких потенциалов. На основе полученных результатов оценена плотность состояний двухуровневых систем, возникающих в двухъямных потенциалах.
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Uner, Denis Ozbay. Interactions of hydrogen with alkali promoted Ru/SiO2 catalysts: A proton NMR study. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10161807.

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Williams, R., J. E. Rubensson, and S. Eisebitt. Ion-implanted Si-nanostructures buried in a SiO{sub 2} substrate studied with soft-x-ray spectroscopy. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603520.

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Hansen, Paul L., and George R. Hoffman. The vegetation of the Grand River/Cedar River, Sioux, and Ashland Districts of the Custer National Forest: a habitat type classification. Ft. Collins, CO: U.S. Department of Agriculture, Forest Service, Rocky Mountain Forest and Range Experiment Station, 1988. http://dx.doi.org/10.2737/rm-gtr-157.

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Collis, W. J. Deposition of a-SiC:H, a-SiO{sub 2} and tetrahedral-C with programmable in-situ etching. Final performance report, March 1, 1988--November 30, 1991. Office of Scientific and Technical Information (OSTI), June 1995. http://dx.doi.org/10.2172/79027.

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Cowell and Roesch. PR-283-14204-R01 SoLoNOx Low Load Controls to Reduce Emissions for Less Restrictive Load Following. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), July 2016. http://dx.doi.org/10.55274/r0011016.

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A Mobile Emissions Lab (MEL) and two site visits for extensive low load emissions mapping were used to document the emissions performance of the test unit over a 10 month period from June 2015 to April 2016. Data was collected over a wide ambient temperature range from 35 to 108?F. The field trial has demonstrated that the new algorithm results in a significant reduction in NOx, CO and UHC emissions from idle to 50% load. Reductions in CO and UHC emission of 50 to 99% were demonstrated from idle to 50% load. NOx emissions reductions were slightly less ranging from 20 to 75% from idle to 50% load. The emissions performance above 50% load were unchanged when comparing the LLC to the production algorithm. Continuous emis-sion measurements indicate that emissions of NOx and CO were very consistent with average levels of 6 and 1 ppm, respectively. No clear emission variation trends were evident with ambient temperature or engine speed (load). By extending the load range with bleed valve control the engine heat rate was increased slightly from idle to 50% load and with no impact measured from 50 to 100% load.
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