Journal articles: '55nm'

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Le, Quyen-Huyen, Hsu-Chiang Kuan, Jia-Bin Dai, Izzuddin Zaman, Lee Luong, and Jun Ma. "Structure–property relations of 55nm particle-toughened epoxy." Polymer 51, no. 21 (October 2010): 4867–79. http://dx.doi.org/10.1016/j.polymer.2010.08.038.

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Janghouri, Mohammad, Ezeddin Mohajerani, Mostafa M. Amini, and Naser Safari. "Porphyrin doping of dichloride-bis(5,7-dichloroquinolin-8-olato)tin(IV) complex for electroluminescence." Journal of Porphyrins and Phthalocyanines 17, no. 05 (May 2013): 351–58. http://dx.doi.org/10.1142/s1088424613500132.

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A method for obtaining red emission from an organic-light emitting diode has been developed by dissolving red and yellow dyes in a common solvent and thermally evaporating the mixture in a single furnace. Dichlorido-bis(5,7-dichloroquinolin-8-olato)tin(IV) complex ( Q2SnCl2 , Q = 5,7-dichloro-8-hydroxyquinoline) has been synthesized for using as a fluorescent material in organic light-emitting diodes (OLEDs). The electronic states HOMO (Highest Occupied Molecular Orbital)/LUMO (Lowest Occupied Molecular Orbital) energy levels explored by means of cyclic voltammetry measurements. A device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/ Q2SnCl2/Al (180nm) was fabricated and its electroluminescence performance at various thicknesses of light emitting layer (LEL) of Q2SnCl2 is reported. By following this step, an optimal thickness for the doping effect was also identified and explained. Finally a device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/meso-tetraphenylporphyrin (TPP): Q2SnCl2 (75nm)/ Al (180nm) was fabricated and its electroluminescence performance at various concentrations of dye has been investigated. It is shown that this new method is promising candidate for fabrication of low cost OLEDs at more homogeneous layer.

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Huang, Chun Lei, Lun Yao Wang, Hao Liang, and Yin Shui Xia. "A Design of Three-Input Low-Power AND/XOR Complex Gate." Applied Mechanics and Materials 687-691 (November 2014): 3149–52. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3149.

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For the deficiencies of the existing complex circuit designs, a novel transistor-level three-input AND/XOR logic complex gate with simple and symmetry structure is proposed. HPSICE simulation results show that the proposed circuit has correct operation. Further, in 55nm process CMOS technology, compared with the conventional cell-based cascaded AND/XOR circuit at different operation frequencies, the proposed circuit has a significant improvement at delay, power consumption and power delay product (PDP).

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dos Santos, Claudinei, Paula Cipriano da Silva, Luciane Carvalho de Paula, Alexandre Fernandes Habibe, Jefferson Fabrício C. Lins, and Walter Soares. "Characterization of Commercial Co-Cr-Alloy Powder Used in Selective Laser Sintering." Materials Science Forum 802 (December 2014): 329–33. http://dx.doi.org/10.4028/www.scientific.net/msf.802.329.

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This paper presents the microstructural characterization of particle systems used in equipment for selective laser sintering. Three distinct commercial metal powders, with chemical composition based on Co-Cr-alloy, were characterized by X-ray diffraction, scanning electron microscopy and particle size distribution. The powders showed regular spherical particles with varying sizes and crystalline phase of Co-solid solution. Different powders present particle size among 55nm and 245 nm. This behavior affects the sinterability of samples submitted to the selective laser sintering.

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Bera, Lakshmi Kanta, Navab Singh, Ze Yu Chen, Calvin Chua Hung Ming, King Jien Chui, Ravinder Pal Singh, Yee Ye Sheng, et al. "Multi-Layer High-K Gate Stack Materials for Low D<sub>it</sub> 4H-SiC Based MOSFETs." Materials Science Forum 1062 (May 31, 2022): 528–32. http://dx.doi.org/10.4028/p-oajc69.

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Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al2O3 and HfO2. A 5nm thick interfacial silicon oxynitride is deposited prior to laminated films to investigate interface trap properties and tuning of flat band voltage. Total thickness of gate-stack films including interfacial layer is 55nm. The thermal stability of multi-layered nanolaminated film is investigated using XTEM. Localized crystallization of HfO2 is visible after RTA at 900°C while Al2O3 remains fully amorphous. Some of HfO2 grains have extended into Al2O3 layer but was not able to crossover. The measured accumulation capacitance of 55nm thick gate dielectric gives an effective dielectric constant value of 9.6 and an equivalent oxide thickness of 22nm from high-frequency capacitance-voltage measurements. A positive flat band voltage ( of 12.2V and 10.6V are observed from both single layer HfO2 and Al2O3 dielectrics, respectively due to presence of negatively charged oxygen interstitial defects generated during atomic layer deposition process. However, VFB shifted towards negative voltage-7.6V for multi-layered Al2O3/HfO2 stacks probably associated with positive Al and Hf interstitials at interface of Al2O3/HfO2. Ultrathin interfacial oxynitride films is effective to reduce Dit to 3×1011/eVcm2 and tuning of VFB. The breakdown field of stacked gate dielectric on 4H-SiC is 10.0 MV/cm.

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Guo, Xuanchen, Suge Yue, Jiancheng Li, Tao Zhou, and Qichao Zha. "Total ionizing dose effects on data retention characteristics of 55nm SONOS flash." Journal of Physics: Conference Series 1983, no. 1 (July 1, 2021): 012061. http://dx.doi.org/10.1088/1742-6596/1983/1/012061.

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Быкова, Л. Е., С. М. Жарков, В. Г. Мягков, Ю. Ю. Балашов, and Г. С. Патрин. "Формирование интерметаллида Cu-=SUB=-6-=/SUB=-Sn-=SUB=-5-=/SUB=- в тонких пленках Cu/Sn." Физика твердого тела 63, no. 12 (2021): 2205. http://dx.doi.org/10.21883/ftt.2021.12.51685.139.

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The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55nm)/Cu(30nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300 °C and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.

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Deng, Marina, Thomas Quémerais, Simon Bouvot, Daniel Gloria, Pascal Chevalier, Sylvie Lépilliet, François Danneville, and Gilles Dambrine. "Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz." Solid-State Electronics 129 (March 2017): 150–56. http://dx.doi.org/10.1016/j.sse.2016.11.012.

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Centurelli, Francesco, Pietro Monsurrò, Giuseppe Scotti, Pasquale Tommasino, and Alessandro Trifiletti. "10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology." Electronics 9, no. 4 (March 28, 2020): 563. http://dx.doi.org/10.3390/electronics9040563.

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Multi-GHz lowpass filters are key components for many RF applications and are required for the implementation of integrated high-speed analog-to-digital and digital-to-analog converters and optical communication systems. In the last two decades, integrated filters in the Multi-GHz range have been implemented using III-V or SiGe technologies. In all cases in which the size of passive components is a concern, inductorless designs are preferred. Furthermore, due to the recent development of high-speed and high-resolution data converters, highly linear multi-GHz filters are required more and more. Classical open loop topologies are not able to achieve high linearity, and closed loop filters are preferred in all applications where linearity is a key requirement. In this work, we present a fully differential BiCMOS implementation of the classical Sallen Key filter, which is able to operate up to about 10 GHz by exploiting both the bipolar and MOS transistors of a commercial 55-nm BiCMOS technology. The layout of the biquad filter has been implemented, and the results of post-layout simulations are reported. The biquad stage exhibits excellent SFDR (64 dB) and dynamic range (about 50 dB) due to the closed loop operation, and good power efficiency (0.94 pW/Hz/pole) with respect to comparable active inductorless lowpass filters reported in the literature. Moreover, unlike other filters, it exploits the different active devices offered by commercial SiGe BiCMOS technologies. Parametric and Monte Carlo simulations are also included to assess the robustness of the proposed biquad filter against PVT and mismatch variations.

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Yang, Wei, Chun Xiang Cui, Qiao Zhi Liu, and Ji Bing Sun. "Fabrication and Characterization of Integrated Ultrahigh-Density Pt Nanowire Arrays within the AAO Template." Materials Science Forum 789 (April 2014): 1–5. http://dx.doi.org/10.4028/www.scientific.net/msf.789.1.

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The parallel Pt nanowires with highly ordered array and the length more than a dozen micrometers were prepared by the direct current electro-deposition in porous anodic aluminum oxide (AAO) templates. The deposition was performed in a aqueous solution of the Pt (NO2)2(NH3)2 composite electrolyte. The images and structure of Pt nanowire arrays were obtained by field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM), respectively. Selected area electron diffraction (SAED) are employed to study the crystalline morphology of Pt nanowire arrays. The relationship between the nanowires length and electro-deposition time was discussed. Their growth speed is about 0.5μm/h. The TEM micrographs show that these nanowires have uniform diameter of approximate 55nm. SAED pattern reveals that the Pt nanowire has a polycrystalline structure.

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Xu, Ding Jie, Hong Ru Song, and Wei Wang. "Analysis of Transmission Characteristic in Single Polarization Dual Elliptical Assistant Holes Hollow Fiber." Applied Mechanics and Materials 475-476 (December 2013): 1359–62. http://dx.doi.org/10.4028/www.scientific.net/amm.475-476.1359.

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To improve the propagation quality in photonic crystal fibers,a novel dual elliptical assistant holes hollow fiber is proposed. Numerical model of confinement loss has been modeled by vector finite element method, then the core loss characteristics and the power ratio of the hollow fiber has been simulated and analyzed. The results show that the x-polarization confinement loss and the core power ratio are 0.06dB/m and 98.2% at 1550nm, respectively. By contrast, the y-polarization confinement loss is up to 243.34dB/m while the core power ratio is 47.86%. The novel optical fiber exhibits good single polarization characteristics and transmission characteristics, and the bandwidth range of single mode single polarization is 55nm. The novel optical fiber is very good to satisfy the requirement of single mode single polarization at the 1550nm.

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Li, Gui Rong, Hong Ming Wang, Yun Cai, Yu Tao Zhao, Jun Jie Wang, Kai Xuan Gu, and Hong Zhang. "Nanocrystalline Microstructure in AZ91 Magnesium Alloy Prepared with Cryogenic Treatment." Key Engineering Materials 575-576 (September 2013): 386–89. http://dx.doi.org/10.4028/www.scientific.net/kem.575-576.386.

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In order to make clear about the effect of cryogenic temperature on the microstructure evolution of alloy, the as-cast AZ91 magnesium alloy was subjected to the cryogenic treatment after solution treatment (415°C,5h) and aging treatment (190°C, 16h) with the protection of graphite power. Transmission Electron Microscope was utilized to characterize the microstructure of as-treated sample. The results show that a high volume fraction of nanocrystalline can be found in the treated alloys with the average sizes are about 55nm. The phenomenon highlights the importance of cryogenic temperature in forming nanostructures. During the continuous contraction of alloy the micro dynamic plastic deformation induces the generation, movement and accumulation of high-density dislocations that give rise to the formation of nanocrystalline during recovery and recrystallization.

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13

Zhao, Xiao Ling, Yu Zhi Zhang, Yun Zhen Cao, Lu Yan, and Xiao Wang. "Thermochromic Properties of VO₂ Films Deposited on Quartz Glass." Advanced Materials Research 734-737 (August 2013): 2420–25. http://dx.doi.org/10.4028/www.scientific.net/amr.734-737.2420.

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VO2 films were deposited on quartz glass by rf reactive magnetron sputtering with plasma emission monitoring (PEM). The effects of film thickness 30-194nm on optical properties and phase transition properties were investigated. The transmittance and semiconductor-metal phase transition (SMT) temperature decrease and reflectance of the films in metallic states increase as the thickness of films increases. For 55nm-thick VO2 film, the luminous transmittance (Tlum) and switching efficiency (∆Tsol) were about 34.1% (20°C) and 35.3 %(90°C) and 6.8%(∆Tsol). Thinner films can provide much higher luminous transmittance but they suffer from an attenuation of switching. The switching efficiency of the VO2 films does not increase monotonically as the thickness increase. Variable temperature transmission electron microscopy (TEM) measurement reveals that the SMT temperature changes for VO2 with different orientation.

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Singh, Shashank, and Vikas Kumar Sachan. "A Systematic Perspective for 4Ghz Frequency Synthesizer Integration on to Single Systems." International Journal for Research in Applied Science and Engineering Technology 10, no. 2 (February 28, 2022): 1085–92. http://dx.doi.org/10.22214/ijraset.2022.40462.

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Abstract: In wireless medium, necessity of higher frequency is expanding day by day. For higher frequency deploy system data rates should be higher. In unguided medium, as signal passes a longer distance and due to intervention of noise, there is fallacy. In phases and frequencies and we get a drifted output. In view of this, we are prompted to make a low power frequency synthesizer which would provide a lower locking time, low settling time, average value of damping factor to give a regulated frequency response at the output. The suggested design aspect is for higher frequency which is executed in IEEE 802.11 WLAN standard and OFDM technology, Bluetooth technology, high frequency processor. We have used Microwind 3.1 55nm technology and ADS as outline tool to execute design. Keywords: Frequency synthesizer, phase frequency detector, voltage-controlled oscillators, Microwind 3.1, ADS, wireless communication

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Zhang, Hongtu, Yuhao Shu, Weixiong Jiang, Zihan Yin, Wenfeng Zhao, and Yajun Ha. "A 55nm, 0.4V 5526-TOPS/W Compute-in-Memory Binarized CNN Accelerator for AIoT Applications." IEEE Transactions on Circuits and Systems II: Express Briefs 68, no. 5 (May 2021): 1695–99. http://dx.doi.org/10.1109/tcsii.2021.3066520.

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Breyne, Laurens, Hannes Ramon, Kasper Van Gasse, Michiel Verplaetse, Joris Lambrecht, Michael Vanhoecke, Joris Van Campenhout, et al. "50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM." Optics Express 28, no. 16 (July 29, 2020): 23950. http://dx.doi.org/10.1364/oe.397765.

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Parrassin, Thierry, Guillaume Celi, Sylvain Dudit, and Michel Vallet. "Failure analysis defect location on a real case 55nm memory using dynamic power supply emulation." Microelectronics Reliability 51, no. 9-11 (September 2011): 1646–51. http://dx.doi.org/10.1016/j.microrel.2011.06.056.

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Tripathi, Tripti, D. S. Chauhan, and S. K. Singh. "Low leakage SRAM cell for ULP applications." International Journal of Engineering & Technology 7, no. 4 (September 24, 2018): 2521. http://dx.doi.org/10.14419/ijet.v7i4.14028.

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Leakage power is becoming a major concern in battery operated and hand held devices. With the ever reducing size of electronic devices and the use of memory in most of them, the need for low power devices is vastly increasing. These devices are either in active or standby mode of operation. Leakage power in standby mode of operation is of major concern and various methods to minimize it have been proposed at various stages of design cycle. This paper proposes fingering technique that can be used in 6T SRAM cell to reduce leakage power. Leakage power is calculated for 6T SRAM cell designed using two fingers in access transistors and on comparison with conventional 6T SRAM cell, significant reduction in leakage current is obtained. The layout has been designed in UMC 55nm technology using Cadence Virtuoso tool and it has been shown that the leakage power and delay can be reduced.

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Karthickprabhu, S., G. Hirankumar, A. Maheswaran, R. S. Daries Bella, and C. Sanjeeviraja. "Structural, Morphological, Vibrational and Electrical Studies on Zn Doped Nanocrystalline LiNiPO₄." Materials Science Forum 781 (March 2014): 145–53. http://dx.doi.org/10.4028/www.scientific.net/msf.781.145.

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Olivine structured LiNi1-xZnxPO4 (x=0, 0.05, 0.10, 0.15, 0.20) have been prepared by a polyol method using 1, 2 propanediol as a polyol medium. The XRD results of pure and Zn doped LiNiPO4 sample authenticate the orthorhombic crystal structure with high crystalline nature. The crystallite size is calculated from the Debye Scherer formula and it is found in the range of 55-65nm and 49-55nm for undoped and doped samples respectively. The thermal properties of LiNi1-xZnxPO4 were investigated by thermo gravimetric analysis (TG) and differential thermal analysis. Laser Raman studies confirm that the dopant is entered in to the LiNiPO4 lattice. Morphology of the samples is analyzed through SEM analysis. The higher electrical conductivity is calculated for LiNi0.85Zn0.15PO4 sample compared with other concentrations of dopant and it is found to be 1.08×10-7 S cm-1 at ambient temperature. Dielectric and Modulus studies are also discussed through impedance spectroscopy.

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Shao, Yujuan, Huiming Liu, and Wenshen Wang. "A High-Speed Low Power Multi-Modulus Frequency Divider based on TSPC logic using 55nm CMOS." IOP Conference Series: Materials Science and Engineering 452 (December 13, 2018): 042120. http://dx.doi.org/10.1088/1757-899x/452/4/042120.

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Bossuet, Alice, Thomas Quemerais, Christophe Gaquiere, Estelle Lauga-Larroze, Jean-Michel Fournier, Sylvie Lepilliet, and Daniel Gloria. "A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm." IEEE Microwave and Wireless Components Letters 26, no. 11 (November 2016): 930–32. http://dx.doi.org/10.1109/lmwc.2016.2614969.

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Mustafa, Falah I., and Mooroj Ali. "InSe Nanothin Film with Ar-Gas Low Vacuum Pressure." Applied Mechanics and Materials 606 (August 2014): 15–18. http://dx.doi.org/10.4028/www.scientific.net/amm.606.15.

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InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

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Guo, Xuanchen, Suge Yue, Jiancheng Li, Tao Zhou, and Qichao Zha. "Impact of Program/Erase Cycles, Total Ionizing Dose and Data Bake on Data Retention of 55nm SONOS Flash." Journal of Physics: Conference Series 1920, no. 1 (May 1, 2021): 012101. http://dx.doi.org/10.1088/1742-6596/1920/1/012101.

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Bachman, Mark A., Jerry Liao, John Osenbach, Zafer Kutlu, Jaeyun Gim, and Danny Brady. "Large Die Size Lead Free Flip Chip Ball Grid Array Packaging Considerations for 40nm Fab Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000570–85. http://dx.doi.org/10.4071/2012dpc-ta23.

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To reduce the RC latency, leading edge silicon nodes employ porous SiO2 dielectrics in the interconnect stack. Introduction of porosity lowers the dielectric constant, k, but also significantly decreases both the elastic modulus and fracture toughness of the dielectric. As such, devices manufactured in silicon processes that use low K (90nm, 65nm, and 55nm) and even more so extremely low K ( 45nm, 40nm, and 28nm) interlayer dielectrics are substantially more prone to fracture as a result of package induced stresses than non porous higher K dielectrics. Since the package stresses scale with die size and package body size and inversely with bump pitch, manufacture of large die and package size flip chip devices made with extremely low K dielectrics has proven to be challenging. The stress challenge is further exacerbated by the RoHS requirements for lead free packaging which requires higher process temperatures and somewhat higher yield point solders. The combination of increased stress and reduced mechanical robustness of porous dielectrics has lead to significant reliability and assembly yield issues that have in some cases slowed the introduction of 45nm and 40nm large die lead free flip chip into the market. The work summarized in this paper shows that devices designed to withstand stresses in combination with appropriate assembly processes and bill of materials, yield highly reliable, lead free flip chip packaged devices, with die sizes greater than 400mm2 and package sizes greater than 42.5mm on a side in commercial assembly production lines.

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Lee, Sang Won, Karina Mees, Ho Seon Park, Monika Willert-Porada, and Chang Seop Lee. "Synthesis of Carbon Nanofibers on C-Fiber Textiles by Thermal CVD Using Fe Catalyst." Advanced Materials Research 750-752 (August 2013): 280–92. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.280.

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This research was conducted to synthesize carbon nanofibers on C-fiber textiles by thermal CVD using Fe catalyst. The substrate which was a carbon textile consisting of non woven carbon fibers and attached graphite particles, was oxidized by nitric acid before the deposition process. Hydroxyl groups were created on the C-fiber textile due to the oxidization step. Fe (III) hydroxide was subsequently deposited on the oxidized surface of the C-fiber textile. To deposit ferric particles two different methods were tested: i) deposition-precipitation, ii) dip-coating. For the experiments using both type of catalyst deposition the weight ratio of Fe to C-fiber textile was also varied. Ferric particles were reduced to iron after deposition by using H2/N2gas and CNFs were grown by flowing ethylene gas. Properties of carbon nanofibers created like this were analyzed through Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), N2-sorption (BET), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectoscopy (XPS). In the case of deposition-precipitation method the result shows that the diameter of carbon nanofibers grew up to 40~60nm and 30~55nm at which the weight ratios of Fe catalyst to C-fiber textiles are 1:30 and 1:70 respectively. If Fe particles were deposited by dip-coating method, the diameter of carbon nanofibers grew up to 40~60nm and 25~30nm for the ratios of Fe catalyst to C-fiber textiles 1:10 and 1:30.

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Priscilla, S. Janet, V. Andria Judi, R. Daniel, and K. Sivaji. "Effects of Chromium Doping on the Electrical Properties of ZnO Nanoparticles." Emerging Science Journal 4, no. 2 (April 1, 2020): 82–88. http://dx.doi.org/10.28991/esj-2020-01212.

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Nanostructured ZnO has gained a considerable amount of attention due to its unique physical and chemical properties and due to its remarkable performance in the fields of optics, photonics and electronics. The scope of this work is to study the Structural, Optical and Electronic properties of Pure Zinc Oxide (ZnO) and Chromium doped Zinc Oxide nanoparticles. These nanoparticles were synthesized by low-temperature precipitation method at various concentrations in the range (Zn1-xCrxO; (x = 0, 0.1& 0.3)). The precursors used were analytical grade Zinc Nitrate Hexahydrate and Chromium Nitrate Nona hydrate. The synthesized nanoparticles were annealed at 400°C. The Structural property of the synthesized nanoparticles was analysed by XRD (X-Ray diffraction) and was confirmed to exhibit a crystalline hexagonal wurtzite structure with an average crystallite size of 55nm. The functional groups were analysed using FTIR (Fourier Transformed Infra-red spectroscopy). The Morphology was analysed by FESEM (Field Emission Scanning Electron Microscope) and a change in morphology from spherical to spindle like structure was observed. The Optical properties were analysed using UV-Vis spectroscopy, the absorption spectrum for electromagnetic spectrum was observed and the changes in the optical band gap of ZnO nanoparticles with Chromium dopant addition were calculated to be in the range of 3.6 eV. The Electrical property of the synthesised nanoparticles was analysed using Electrochemical Impedance Spectroscopy (EIS) and the conductivity was calculated to be in the range of 1.1e-07S/m.

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OVCHINNIKOV, V. V., N. V. UCHEVATKINA, I. A. KURBATOVA, E. V. LUKYANENKO, and S. V. YAKUTINA. "VT6 TITANIUM ALLOY WEARABILITY INCREASE VIA IMPLANTATION OF COPPER AND ALUMINUM IONS." Periódico Tchê Química 16, no. 32 (August 20, 2019): 945–66. http://dx.doi.org/10.52571/ptq.v16.n32.2019.963_periodico32_pgs_945_966.pdf.

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The relevance of the article is due to the fact that the use of titanium alloys within friction joints is restrained by their low resistance to wear while traditional methods of increasing their wear resistance are ineffective. The objective of this work was to study the processes occurring on the surface of VT6 titanium alloy samples when implanting with copper and aluminum ions, as well as in friction. Elemental composition, structural-phase state, mechanical and tribological properties of VT6 titanium alloy surface layers modified by aluminum and copper ions during the high-intensity ion-implantation process was being researched. As can be seen from the undertaken studies, the mode of the high-intensity ion-implantation process makes it possible to obtain ion doped surface layers of VT6 alloy containing TiAl, Ti3Al, Ti3Cu, Ti2Cu, TiCu finely dispersed intermetallic phases and a solid solution of aluminum and copper in titanium of composition varying in depth. The thickness of the ion-doped layer, the average grain size of the intermetallic phases (from 18 to 55nm) and their conglomerates (from 45 to 280 nm) increases with the increase in implantation dose from 2⋅1017 to 1.2⋅1019 ion/cm2 while aluminum implantation (from 0.42 to 2.1 μm) is in progress. It has been shown that the implantation of aluminum and copper ions into VT6 alloy leads to a considerable increase in its microhardness and wearability. Based on the research results, a conclusion on the positive effect of a structural-phase state of ion-doped titanium layers on their mechanical and tribological properties of VT6 titanium alloy has been drawn.

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Tang, Carine, Lisa Schafranek, Dale Watkins, Wendy T. Parker, Jodi Prime, Deborah L. White, and Timothy Hughes. "Modelling of TKI Resistance In CML Cell Lines: Kinase Domain Mutations Usually Arise In the Setting of BCR-ABL Overexpression." Blood 116, no. 21 (November 19, 2010): 3383. http://dx.doi.org/10.1182/blood.v116.21.3383.3383.

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Abstract Abstract 3383 There are three currently identified secondary resistance mechanisms observed in chronic myeloid leukemia (CML) patients receiving tyrosine kinase inhibitors (TKIs). These include overexpression of drug-efflux proteins (ABCB1 and ABCG2), increased BCR-ABL expression, and mutations in the kinase domain (KD) of BCR-ABL. We investigated the interplay between these three modes of resistance in vitro, as well as looking for other mechanisms. Three CML blast crisis cell lines (K562, its ABCB1-overexpressing variant, K562 Dox, and KU812) were cultured in gradually increasing concentrations of imatinib (IM) to 2μ M, or dasatinib (DAS) to 200nM. Two IM-resistant K562 lines were established, both with increased IC50s for IM (from 13.7μ M in naïve cells, to ~50μ M), as well as increased IC50s for DAS and nilotinib (NIL). No cell-surface expression of ABCB1 or ABCG2 was observed, nor were KD mutations present. However, BCR-ABL expression was seen to steadily increase in both lines from 178% in naïve cells, to ~380% and 1200% in the resistant lines, suggesting this was the major mode of resistance. However, when a DAS-resistant K562 culture was generated the T315I mutation emerged. Studies of the intermediate stages of resistance revealed that BCR-ABL overexpression occurred in a step-wise fashion, peaking at 1915% in the 3.5nM intermediate, but then dropping significantly to ~1000% in the 5nM intermediate (P=0.0003). BCR-ABL expression then stabilised at this level, and the T315I mutation was subsequently detected. Thus, it appears that BCR-ABL overexpression was the first mechanism of resistance detectable, but was followed by the emergence of a KD mutation which had a clear selective advantage. This sequential selection was observed a further four times: in a DAS-resistant K562 Dox culture, and in three IM-resistant KU812 cultures. BCR-ABL expression in the DAS-resistant K562 Dox culture increased from 186% in naïve cells to 540% in the final culture. Studies of intermediate cultures revealed that BCR-ABL expression peaked at 850% in the 55nM intermediate, but then dropped significantly to ~500% in the 75nM intermediate (P=0.004). This drop in BCR-ABL expression coincided with the appearance of the V299L mutation. Interestingly, the K562 Dox DAS-resistant line also displayed resistance to NIL and IM, likely conferred by BCR-ABL overexpression as the 55nM intermediate (with the highest BCR-ABL expression levels) had the highest IC50s for NIL and IM, while the 75nM intermediate (with the V299L mutation) had increased IC50DAS but lower NIL and IM IC50s. Thus, BCR-ABL overexpression was the primary event, followed by the KD mutation. Likewise in three IM-resistant KU812 cultures, BCR-ABL expression levels rose from 443% in naïve cells, to peak levels of 6210%, 10,448% and 990% respectively, followed by drops in expression which coincided with the appearance of compound KD mutations, and the F359C mutation respectively (Table). In contrast, three IM-resistant K562 Dox cells were not found to have any KD mutations, nor BCR-ABL overexpression. Instead, the primary cause of resistance in these lines appears to be a further increase in ABCB1 expression. All three lines had increased IC50s for IM (from 12μ M in naïve cells, to ~27μ M), NIL (from 400nM to ~1000nM) and DAS (from 100nM to >625nM). The addition of PSC833 (an ABCB1 inhibitor) decreased the IM, NIL, and DAS IC50s for all three resistant lines to the level of the naïve control (~3μ M, ~250nM and ~10nM respectively), indicating that ABCB1 expression, facilitating active efflux of the drugs, is the primary mechanism of resistance in these lines. We have demonstrated that KD emergence is a stochastic event, as the same mutation did not always occur twice, however BCR-ABL and ABCB1 overexpression were more likely to arise recurrently in predisposed lines. Notably, different TKIs elicited different resistant mechanisms, but all were BCR-ABL dependent. Furthermore, all resistant lines showed cross-resistance to the three TKIs tested (IM, DAS and NIL), suggesting that currently available TKIs share the same susceptibilities to drug resistance. Table 1. Summary of resistance mechanisms detected in three cell lines exposed to IM or DAS. ✓ = yes; × = no. Culture condition K562 K562 Dox KU812 IM IM DAS IM IM IM DAS IM IM IM Resistance to 3 TKIs ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ KD Mutation x x T315I x x x V299L E450QE459KE470K E459KE462KE466E F359C Increased BCR-ABL ✓ ✓ ✓ x x x ✓ ✓ ✓ ✓ Increased ABCB1 x x x ✓ ✓ ✓ x x x x Disclosures: White: Novartis Pharmaceuticals: Honoraria, Research Funding; Bristol-Myers Squibb: Honoraria, Research Funding. Hughes:Novartis Pharmaceuticals: Honoraria, Research Funding, Speakers Bureau; Bristol-Myers Squibb: Honoraria, Research Funding, Speakers Bureau.

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Putra Gofur, Nanda Rachmad, Aisyah Rachmadani Putri Gofur, Soesilaningtyas Soesilaningtyas, Rizki Nur Rachman Putra Gofur, Mega Kahdina, and Hernalia Martadila Putri. "Ethiology and Pathophysiology of Whart Hpv Infection: A Review Article." Cancer Research and Cellular Therapeutics 6, no. 1 (January 10, 2022): 01–04. http://dx.doi.org/10.31579/2640-1053/109.

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Genital Human Papillomavirus (HPV) infection is a self-limiting and often asymptomatic disease. Genital HPV infection is divided into high-risk HPV (HPV 16 and 18) and low-risk HPV (HPV 6 and 11). Low-risk or non-oncogenic HPV produces a clinical picture of anogenital warts, which may be condylomatous, papules, or keratotic. The subclinical form of genital HPV infection can present with an "aceto-white" lesion found on the cervix that will appear when examined using an acetic acid solution evaluated by colposcopy. Based on the association with cervical cancer and precursor lesions, HPV can also be classified as high-risk (HR-HPV) and low-risk (LR-HPV) oncogenic types. LR-HPV types, such as HPV 6 and 11, can cause generalized genital warts or benign hyperproliferative lesions with a very limited predisposition to malignant progression, while infection with HR-HPV types, HPV 16 and 18, is associated with the development of pre-malignant and cervical lesions. Discussion: Human Papillomavirus is a small DNA virus (50-55nm) belonging to the family Papillomaviridae and genus Papillomavirus. Human papillomavirus (HPV) is a relatively small non-enveloped virus containing a double-stranded circular DNA genome associated with histone-like proteins and protected by a capsid formed by two final proteins, L1 and L2. Each capsid consists of 72 capsomeres, The pathogenesis of HPV begins with infection of stem cells in the basal layer of the epithelium. Once inside the cell, the virus requires expression of the E1 and E2 genes to maintain a low genome copy number. These proteins bind to the origin of replication and the virus secretes cellular DNA polymerases and other proteins required for DNA replication. In the suprabasal layer, the expression of genes E1, E2, E5, E6 and E7 contributes to the maintenance of the viral genome and induces cell proliferation, increasing the number of HPV-infected cells in the epithelium, resulting in a higher number of cells that will eventually produce infectious virions. Conclusion: In benign HPV lesions, cell proliferation increases leading to increased nutrition, resulting in competition for nutrients and oxygen. Both HR-HPV and LR-HPV E7 proteins increase the level of the transcription factor Hypoxia-inducible factor-1 (HIF-1), and induce increased expression of HIF-1 target genes under hypoxic conditions. Increased HIF-1 activity results in increased transcription of a subset of genes that support angiogenesis, and the induction of this angiogenesis is critical for the persistence and growth of HPV lesions such as genital warts.

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Tran, Tu Anh, Varughese Mathew, Wen Shi Koh, K. Y. Yow, and Y. K. Au. "Dicing Development for low-k Copper Wafers using Nickel-Palladium-Gold Bond Pads for Automotive Application." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 001085–96. http://dx.doi.org/10.4071/isom-2012-thp31.

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New automotive requirements expect plastic packages to survive higher operating temperatures with extended thermal duration. Mission profiles for under-the-hood and transmission application historically specified minimal duration at maximum junction temperature, such as 50 total hours at 150C, while keeping most of the total operating duration at lower temperatures. Further module integration and more stringent environmental requirements push modules and thus plastic packages closer to the heat source. As such, new mission profiles include more than 3500 total hours at 150°C. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. More reliable intermetallic systems have been proposed that change the wire material and/or the bond pad metallization. An alternative wire material to gold, copper, has many benefits including low cost, high electrical and thermal conductivities and excellent reliability with aluminum pad metallization. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With nickel about four times as hard as aluminum, OPM plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Surface roughness and hardness measurements were taken on OPM variations. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Laser grooving followed by mechanical dicing of OPM wafers was also performed. Packages underwent extensive reliability stress conditions. The associated process improvements described in this paper supported a successful integration of a 55nm die technology in Low Profile Quad Flat Package with Exposed Pad (LQFP-EP) meeting and exceeding AEC grade 0 requirements.

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Tran, Tu Anh, Varughese Mathew, Wen Shi Koh, K. Y. Yow, and Y. K. Au. "Dicing Development for low-k Copper Wafers using Nickel-Palladium-Gold Bond Pads for Automotive Application." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000657–62. http://dx.doi.org/10.4071/isom-2013-wp24.

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New automotive requirements expect plastic packages to survive higher operating temperatures with extended thermal duration. Mission profiles for under-the-hood and transmission application historically specified minimal duration at maximum junction temperature, such as 50 total hours at 150C, while keeping most of the total operating duration at lower temperatures. Further module integration and more stringent environmental requirements push modules and thus plastic packages closer to the heat source. As such, new mission profiles include more than 3500 total hours at 150°C. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. More reliable intermetallic systems have been proposed that change the wire material and/or the bond pad metallization. An alternative wire material to gold, copper, has many benefits including low cost, high electrical and thermal conductivities and excellent reliability with aluminum pad metallization. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With the hardness of nickel and palladium being more than 10 to 15 times the hardness of aluminum, OPM-plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Specifically, dicing was observed to be not centered on SPGC pads on the pizza mask. Off-centered dicing produced drastic change in Ni loading at the center of the blade and on the edges of the blade. Packages underwent extensive reliability stress conditions. The associated process improvements described in this paper supported a successful integration of a 55nm die technology in Low Profile Quad Flat Package with Exposed Pad (LQFP-EP) meeting and exceeding AEC grade 0 requirements.

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Grobe, Joseph, Joachim Vetter, and Dieter Rehder. "Perfluormethyl-Element-Liganden, XXXIV* 55Mn-NMR-Untersuchungen an Zweikernkomplexen des Typs Mn2(CO)8E(CF3)2Y (E = P, As; Y = Hal und E' R; E' = S, Se, Te)." Zeitschrift für Naturforschung B 40, no. 7 (July 1, 1985): 975–80. http://dx.doi.org/10.1515/znb-1985-0721.

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Abstract Dinuclear complexes of the type {(CO)4Mn}μ-E(CF3)2, μ-Y {Mn(CO)4} (E = P, As; Y = Cl, Br, I; SR, SeR , TeR , with R varying over a wide range of inductive, mesomeric and steric properties) have been investigated by 55Mn NMR spectroscopy. The NMR signals cover the range of -415 to -1450 ppm (relative to aqueous KMnO4); half-widths are between 400 and several thousand Hz. The 55Mn - 31P one-bond coupling is usually unresolved, an exception being the complex with two P(CF3)2 bridges [J(MnP) = 152 Hz], The temperatur gradient for δ(55Mn) is 1.2 ppm/deg. Shielding of the 55Mn nucleus is discussed with respect to δ and πbonding effects and the polarizability (electronegativity) of the bridging functions. With Y = SP(CF3)2 and SeP(CF3)2, five-ring system s with two inequivalent manganese sites are formed, which give rise to two 55Mn NMR signals, the sharper resonance for the site of higher symmetry [Mn{P(CF3)2}2] lying at -1750 ppm.

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33

Pasha, Imran, Rudraswamy Basavanna, Santhi Sheela Yerranguntla, Saraswatula Venkata Suryanarayana, Haladhara Naik, Cherumukku Vallabhan Midhun, and Tarun Patel. "Measurement of 14.54 MeV neutron induced reaction cross sections of Cr and Mn with covariance analysis." Radiochimica Acta 108, no. 9 (September 25, 2020): 679–88. http://dx.doi.org/10.1515/ract-2019-3189.

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AbstractThe 50Cr(n,2n)49Cr, 52Cr(n,2n)51Cr, 52Cr(n,p)52V, 55Mn(n,2n)54Mn, 55Mn(n,α)52V and 55Mn(n,γ)56Mn reaction cross sections at the neutron energy of 14.54 ± 0.24 MeV were measured by using activation method along with off-line γ-ray spectrometry. The 27Al(n,p)27Mg monitor reaction was used for the 52Cr(n,p)52V and 55Mn(n,α)52V reactions, whereas the 197Au(n,γ)198Au monitor reaction for the 55Mn(n,γ)56Mn reaction. The 27Al(n,α)24Na monitor reaction was used for other three reactions. The neutron beam was generated from the T(d,n)4He reaction using the Purnima neutron generator at BARC, Mumbai. The covariance analysis for the uncertainties of reaction cross sections was performed by considering the correlations between different attributes. The present results were compared with the literature data, evaluated data of ENDF, ROSFOND, CENDL, JENDL and JEFF libraries as well as with the theoretical values based on TALYS-1.9 calculation.

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Yang, Shi Chun, Yue Gu, and Ming Li. "Offline Optimization of Parallel Hybrid Electric Vehicle Energy Management Strategy Based on the Dynamic Programming." Advanced Materials Research 1044-1045 (October 2014): 941–46. http://dx.doi.org/10.4028/www.scientific.net/amr.1044-1045.941.

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By using dynamic programming (DP) which is a kind of global optimization algorithm, an energy management control strategy for a parallel hybrid electric vehicle (PHEV) on different charging depleting range (CDR) had been studied. The results show that motor-dominant control strategy should be applied to the PHEV when CDR is less than 55km, and engine-dominant control strategy should be used when CDR is more than 55km. With optimal control strategies from DP, the best economic performance can be obtained as CDR is 55km

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Guo, Ji-Wei. "The Command Of Biotechnology And Merciful Conquest In Military Oppositions." Journal of Special Operations Medicine 09, no. 1 (2009): 69. http://dx.doi.org/10.55460/pwzr-55n0.

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Seca, Hugo, Liliana Santos, Joana Figueiredo, Raquel T. Lima, Jose E. Guimaraes, Clara Sambade, and M. Helena Vasconcelos. "Targeting XIAP for Chemosensitization Purposes: Different Effect with Different Cytotoxic Drugs." Blood 112, no. 11 (November 16, 2008): 1597. http://dx.doi.org/10.1182/blood.v112.11.1597.1597.

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Abstract Defects in apoptosis have been implicated in the resistance of cancer cells to a wide variety of anticancer drugs. XIAP, an inhibitor of both intrinsic and extrinsic apoptotic pathways by inhibiting caspases-3, -7 and -9, has been proposed as a good molecular target for enhancing the effects of cytotoxic drugs since: it is widely expressed in human cancer cell lines and human cancer tissues; downregulation of XIAP expression enhanced the effects of chemotherapeutic agents in various cancer cell line models; XIAP expression correlates with prognosis in some cancers, including in acute myeloid leukemia. Small molecules able to inhibit XIAP have been developed. Furthermore, antisense oligonucleotide inhibitors of XIAP (AEG35156) are already in clinical trials. However, the potential chemosensitization effect of XIAP has not been thoroughly explored, both concerning different tumor models and drugs. The purpose of the current study was to investigate if downregulation of XIAP enhances the effects of doxorubicin and of cytarabine, drugs used in the treatment of acute leukemias, in an in vitro model of blastic phase Chronic Myeloid Leukemia, the K562 cell line. The approach was to downregulate XIAP in K562 cells by using: transient transfection with siRNAs and stable transfection with shRNAs cloned into an appropriate vector. Two different siRNAs targeting XIAP were tested, using two different transfection conditions for siRNA delivery. Relatively modest downregulation of XIAP was observed by Western Blot, and the more potent siRNA sequence and transfection conditions were chosen for the chemosensitization studies. Our results show that downregulation of XIAP expression: reduced cellular viability but this effect was not significant; sensitized cells to doxorubicin (IC50 decreased from 78nM to 55nM) but not to cytarabine. To confirm these results, stable cell lines were established by transfection of shRNAs cloned into an appropriate vector. Modest downregulation of XIAP was achieved in the stable cell line when compared to the control shRNA cell line. In these cell lines the results confirmed that downregulation of XIAP sensitizes to doxorubicin (IC50 decreased from 68nM to 50nM) but not to cytarabine. Further analysis of the cells following treatment with the cytotoxic drugs allowed to confirm that both drugs induced programmed cell death by apoptosis (with cleavage of pro-caspase 3) and further reduction of XIAP protein levels, which is probably due to the apoptotic process itself. However, the shRNAs did not provide a better model for studying chemosensitization than the siRNAs. This fact, together with the modest levels of XIAP downregulation, probably reflects that the shRNA sequence corresponds to the siRNA sequence previously used. In conclusion, downregulation of XIAP sensitized K562 cells to doxorubicin but not to cytarabine. This may be partially due to the level of XIAP downregulation obtained but may also be due to the different mechanisms of action of these drugs, indicating that this should be taken into account when considering targeting XIAP for achieving sensitization to cytotoxic drugs.

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Ataollahi Oshkour, Azim, Sumit Pramanik, Seyed Farid Seyed Shirazi, Mehdi Mehrali, Yat-Huang Yau, and Noor Azuan Abu Osman. "A Comparison in Mechanical Properties of Cermets of Calcium Silicate with Ti-55Ni and Ti-6Al-4V Alloys for Hard Tissues Replacement." Scientific World Journal 2014 (2014): 1–9. http://dx.doi.org/10.1155/2014/616804.

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This study investigated the impact of calcium silicate (CS) content on composition, compressive mechanical properties, and hardness of CS cermets with Ti-55Ni and Ti-6Al-4V alloys sintered at 1200°C. The powder metallurgy route was exploited to prepare the cermets. New phases of materials of Ni16Ti6Si7, CaTiO3, and Ni31Si12appeared in cermet of Ti-55Ni with CS and in cermet of Ti-6Al-4V with CS, the new phases Ti5Si3, Ti2O, and CaTiO3, which were emerged during sintering at different CS content (wt%). The minimum shrinkage and density were observed in both groups of cermets for the 50 and 100 wt% CS content, respectively. The cermets with 40 wt% of CS had minimum compressive Young’s modulus. The minimum of compressive strength and strain percentage at maximum load were revealed in cermets with 50 and 40 wt% of CS with Ti-55Ni and Ti-6Al-4V cermets, respectively. The cermets with 80 and 90 wt% of CS showed more plasticity than the pure CS. It concluded that the composition and mechanical properties of sintered cermets of Ti-55Ni and Ti-6Al-4V with CS significantly depend on the CS content in raw cermet materials. Thus, the different mechanical properties of the cermets can be used as potential materials for different hard tissues replacements.

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38

Rubinstein, M., G. H. Stauss, T. E. Phillips, K. Moorjani, and L. H. Bennett. "Nuclear magnetic resonance in Al-rich quasiperiodic crystals." Journal of Materials Research 1, no. 2 (April 1986): 243–46. http://dx.doi.org/10.1557/jmr.1986.0243.

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The 27Al and the 55Mn nuclear magnetic resonance powder pattern lineshapes have been obtained in icosahedral and decagonal (T phase) Al-Mn quasiperiodic crystals, and are compared to that of orthorhombic Al6Mn. The quasiperiodic crystals yield much broader spectra with little resolved structure. The quadrupole and Knight shift parameters for the 55Mn resonance in orthorhombic Al6Mn have been determined as |vQ| = 0.76 MHz,Kax = −2.7 × 10−4, Kiso = + 5 × 10−3. The results imply that Al6Mn and the quasiperiodic crystals have similar electronic and magnetic properties.

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Senthil Kumar, B., Zhang Rui Fen, Yam, Lip Huei, Zhang HanWen, Kang Sungsig, and Chan Li-San. "Enhancing the Paste Release on 55μm pads with Water-Soluble Type 7 SAC305 Solder Paste for High Density SIP Application." International Symposium on Microelectronics 2021, no. 1 (October 1, 2021): 000239–43. http://dx.doi.org/10.4071/1085-8024-2021.1.000239.

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Abstract The ultra-fine SAC305 solder is widely used as the lead-free solder composition for interconnection in advanced packaging based on its advantages such as good joint strength, thermo-mechanical fatigue behavior and creep resistance. Stencil printing remains the technology of choice for system-in-package (SiP) assembly because of its benefits such as economy of usage, ease of process control, flexibility of usage and fast and wide range of process window. SiP involves the high-level integration of different components, Copper (Cu) pillar flip-chip dies and chips in one package to achieve multiple functions in one system. The need to accommodate ever increasing demand for reduced footprints requires the technology to constantly invent a range of Cu pillar 55μm diameter and smaller components. Many mobile communications SiP consist of 6 or more flip chips in a single package. Conventional flip-chip attach uses flux & Cu pillar solder cap for solder joint formation as it is challenging for solder paste to be printed on fine geometries below 70μm. Additional benefits of solder paste printing help eliminate non-wet Cu pillar defect rates and improve yield over conventional flux printing. Heraeus solder paste (AP series T7) makes use of ultra-fine spherical shape of solder powder to create strong metal coalesce for bonding during reflow process of Cu pillars mounting to substrates. For example, the smallest passive component in use today is 008004 and Cu pillar diameter of 70um, which has a stencil opening of 125μm and 70μm respectively. Further reduction in Cu pillar flip-chip diameter of 55μm will require further reduction in stencil opening to 55μm, thus testing the limits of current type 7 pastes. Current solder pastes (AP series T7) can meet the consistency of printability when the stencil opening is 70μm or more. With smaller stencil opening, down to 55μm, the printing performance is less than desired. In this paper we describe the stencil printing application on the enhanced version of type 7 paste with a reinvented flux. The application tests were carried out using 55μm stencil opening. This paper will report the results of this application test.

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Oliveira, V. A. V., T. G. S. Braz, R. B. Silva, A. C. R. Veloso, L. D. A. Rufino, J. A. Martuscello, M. H. F. Mourthé, and L. V. Barros. "Defoliation heights for palisade grass cv. Marandu in silvopastoral system." Arquivo Brasileiro de Medicina Veterinária e Zootecnia 73, no. 3 (May 2021): 665–74. http://dx.doi.org/10.1590/1678-4162-12253.

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ABSTRACT The objective was to test the response of Urochloa brizantha cv. Marandu in monoculture and in silvopastoral system (SPS), at two distances from the trees, and define the best defoliation height for SPS. Four intermittent defoliation heights (25, 35, 45 and 55cm) and two distances from tree lines (2.5 and 5.0m) were evaluated in the SPS with a control defoliated with 25cm in full sun. The experiment was performed in a randomized block design with 3 replicates in a 4 × 2 + 1 split plot scheme. The control had higher forage accumulation (46.9kg/ha. day) than the SPS (31.1kg/ha. day). The bulk density was also higher in the control (0.89mg/cm³) than in SPS (0.48mg/cm³). The percentage of leaves (78.06%) and leaf/stem ratio (6.04) did not differ among the treatments. In the SPS, there was an increase of 31.07% in forage accumulation from 25 to 55cm. The forage accumulation and bulk density of Urochloa brizantha cv. Marandu in monoculture is greater than in the SPS regardless of the management goal and the distance from trees. The goal of 55cm in the SPS presented greater forage accumulation.

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Xin, Ling. "China approves £550m photon source." Physics World 31, no. 3 (March 2018): 9. http://dx.doi.org/10.1088/2058-7058/31/3/15.

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Croft, Sally. "Research Funding: The £550m formula." Physics World 5, no. 8 (August 1992): 6–7. http://dx.doi.org/10.1088/2058-7058/5/8/4.

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David Britt, R., Bradley Sturgeon, James Ball, and David Randall. "55MN electron-spin echo endor." Journal of Inorganic Biochemistry 51, no. 1-2 (July 1993): 153. http://dx.doi.org/10.1016/0162-0134(93)85189-f.

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44

Zhao, Zhao, Xue Gang Luo, and Xiao Yan Lin. "Synergistic Effects of Ferric Stearate, Ferrocene and NiDBC." Materials Science Forum 658 (July 2010): 499–502. http://dx.doi.org/10.4028/www.scientific.net/msf.658.499.

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The synergistic effects of ferric stearate, ferrocene and nickel N,N-dibuty dithiocarbamate (NiDBC) on photocatalysis were studied. Absorption intensities and redox abilities of these pholocatalyst compounds were investigated by Diffuse Reflectance Spectroscopy (DRS) and cyclic voltammetry. The study indicated that adding Ferric stearate to either ferrocene or NiDBC reduced the absorption intensity at the range of 400-550nm. Mixed with NiDBC, the absorbance ranges of ferric stearate and ferrocene were both broadened from 200-550nm to 200-700nm. The results of cyclic voltammetry indicated that redox ability of ferrocene was inhibited by ferric stearate. Furthermore, accession of NiDBC may enhance the inhibition. NiDBC reduced the redox ability of ferric stearate as well.

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45

Schinzel, Sandra, and Martin Kaupp. "Validation of broken-symmetry density functional methods for the calculation of electron paramagnetic resonance parameters of dinuclear mixed-valence MnIVMnIII complexes." Canadian Journal of Chemistry 87, no. 10 (October 2009): 1521–39. http://dx.doi.org/10.1139/v09-094.

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. The EPR parameters of a series of dinuclear manganese(III,IV) complexes with mono(μ-oxo), bis(μ-oxo), (μ-oxo)(μ-carboxylato), bis(μ-oxo)(μ-carboxylato), and (μ-oxo)bis(μ-carboxylato) bridges were studied by broken-symmetry density functional (DFT) methods. The influence of the exchange-correlation functional on the agreement with experiment has been evaluated systematically for g tensors; 55Mn, 14N, and 1H hyperfine coupling tensors; and Heisenberg exchange couplings. 14N and 1H hyperfine couplings, 55Mn hyperfine anisotropies, g tensors, and exchange couplings are well described by hybrid functionals with moderate exact-exchange admixtures such as B3LYP. The isotropic 55Mn hyperfine couplings require larger exact-exchange admixtures. However, the errors of the B3LYP calculations are systematic and may be corrected by a constant scaling factor, providing good predictive power for a wide range of EPR parameters with broken-symmetry DFT and standard functionals. The influence of terminal and bridging ligands on structure, spin-density distributions, and EPR parameters are evaluated systematically. Computed hyperfine and g tensors are not covariant to each other. This may have consequences for spectra simulations. The nature of the broken-symmetry state and the origin of its spin contamination were analyzed by an expansion into restricted determinants, based on paired orbitals.

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Xiong, Yiong, and Yue Ming Yue. "New Spectral Indices as Indicators of Carotenoids Content." Applied Mechanics and Materials 220-223 (November 2012): 2983–86. http://dx.doi.org/10.4028/www.scientific.net/amm.220-223.2983.

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Carotenoids play a key role in adaptation of plants to light stress and other unfavorable ecological conditions. Remote sensing of carotenoids content still not well developed due to the absorptions overlap of chlorophyll a and carotenoids in the visible spectral range. In this study, for accurate estimation of carotenoids contents, an assumption of absorption in [450, 550nm] is proposed. That is, the spectral reflectance features in this range are comprehensive effects of chlorophyll (chl) and carotenoids (car) absorption. And the effects of chlorophyll and carotenoids were multiplicative in [450, 550nm] and a new spectral index was defined. The results showed that the new spectral index was strongly related to carotenoids and could be applied as the indicator of carotenoids content.

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Hashmi, G., MK Basher, M. Hoq, and MH Rahman. "Band gap Measurement of P – type Monocrystalline Silicon Wafer." Bangladesh Journal of Scientific and Industrial Research 53, no. 3 (September 18, 2018): 179–84. http://dx.doi.org/10.3329/bjsir.v53i3.38263.

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Band gap of P-type monocrystalline silicon wafer has been measured using spectral response measurement system. To see the spectral response a SR510 lock in amplifier, SR540 optical chopper, monochromator (400nm-1200nm), optical detector and lab view software has been used. From spectral response of polished P-type monocrystalline silicon wafer absorption, reflection and transmission has been respectively seen from 400nm-550nm, 550nm-1050nm and 1050-1200nm. Assuming band gap of silicon is (1.12eV), this result has been theoretically verified using Planck–Einstein relation. Moreover, theoretical band gap of silicon has been calculated (1.127362 eV). The band gap measurement process uses partial concept of Tauc’s downhill negative slop and Planck–Einstein relation. Experimental result shows that, the band gap of silicon is 1.127907 eV.Bangladesh J. Sci. Ind. Res.53(3), 179-184, 2018

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Natori, Yoshiaki, Kenichi Murakami, Satoshi Arai, Yousuke Kurosaki, Hisashi Mogi, and Hotaka Homma. "Effect of Initial Grain Sizes on Strain Induced Boundary Migration." Materials Science Forum 715-716 (April 2012): 924–29. http://dx.doi.org/10.4028/www.scientific.net/msf.715-716.924.

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Examination of the SIBM mechanism based on the dislocation substructure at the interior of the Goss oriented grain was carried out by changing the grain size prior to the temper rolling. The following results were obtained. 1) SIBM significantly increased Goss orientation during the eminent grain growth with the initial grain sizes from 18 to 55μm. 2) When the initial grain sizes were large, i.e. 37μm and 55μm, the rolling with the reduction beneath the critical value could not promote SIBM, even the normal grain growth could also be hindered. Consequently a proposal was made that the nucleation of the recovery appeared among substructure domains containing sluggish strain. There exists an adequate size of the domain which varies with the change both of the rolling reduction and the initial grain size.

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Kohori, Y., Y. Iwamoto, K. Uemura, Y. Akahama, and T. Kohara. "55Mn NQR study in βMn alloys." Physica B: Condensed Matter 223-224 (June 1996): 594–97. http://dx.doi.org/10.1016/0921-4526(96)00183-4.

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Kong, Yong-Ku, Soo-Jin Lee, Brian D. Lowe, and Seongho Song. "Evaluation of Various Handle Grip Spans for Optimizing Finger Specific Force Based on the Users' Hand Sizes." Proceedings of the Human Factors and Ergonomics Society Annual Meeting 51, no. 15 (October 2007): 884–88. http://dx.doi.org/10.1177/154193120705101504.

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This study evaluated the effects of handle grip span and user's hand size on maximum grip strength and individual finger force using a computerized digital dynamometer with five various grip spans (45, 50, 55, 60, and 65mm). Forty-six males participated and were assigned into three hand size groups (small, middle, large) according to their hand lengths. Results showed that generally 55 and 50mm grip spans had the highest grip strength (433.6N and 430.8N, respectively), whereas 65mm grip span had the least grip strength. With respect to the interaction effect of grip span and hand size, small hand sized participants produced the highest grip forces at the 45mm grip span, followed by 50 and 55mm, middle hand size participants provided the highest grip force at the 55mm followed by 50 and 45mm, whereas large hand size participants exerted the highest grip force at the 55mm followed by 60mm. In the analysis of individual finger force, the middle finger force was the strongest and the highest contribution (37.5%) to the total finger force, followed by ring (28.7%), index (20.2%) and little (13.6%) fingers. In addition, it was noted that each finger had a different optimal grip span for exerting maximum force, resulting in a bowed contoured shaped handle (i.e., the grip span of the handle at the center is larger than that of the handle at the end) for two-handle hand tools.

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Journal articles on the topic '55nm'

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