Relevant bibliographies by topics / 55nm

Academic literature on the topic '55nm'

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Published: 9 March 2023
Last updated: 10 March 2023

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Journal articles on the topic "55nm"

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Le, Quyen-Huyen, Hsu-Chiang Kuan, Jia-Bin Dai, Izzuddin Zaman, Lee Luong, and Jun Ma. "Structure–property relations of 55nm particle-toughened epoxy." Polymer 51, no. 21 (October 2010): 4867–79. http://dx.doi.org/10.1016/j.polymer.2010.08.038.

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Janghouri, Mohammad, Ezeddin Mohajerani, Mostafa M. Amini, and Naser Safari. "Porphyrin doping of dichloride-bis(5,7-dichloroquinolin-8-olato)tin(IV) complex for electroluminescence." Journal of Porphyrins and Phthalocyanines 17, no. 05 (May 2013): 351–58. http://dx.doi.org/10.1142/s1088424613500132.

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A method for obtaining red emission from an organic-light emitting diode has been developed by dissolving red and yellow dyes in a common solvent and thermally evaporating the mixture in a single furnace. Dichlorido-bis(5,7-dichloroquinolin-8-olato)tin(IV) complex ( Q2SnCl2 , Q = 5,7-dichloro-8-hydroxyquinoline) has been synthesized for using as a fluorescent material in organic light-emitting diodes (OLEDs). The electronic states HOMO (Highest Occupied Molecular Orbital)/LUMO (Lowest Occupied Molecular Orbital) energy levels explored by means of cyclic voltammetry measurements. A device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/ Q2SnCl2/Al (180nm) was fabricated and its electroluminescence performance at various thicknesses of light emitting layer (LEL) of Q2SnCl2 is reported. By following this step, an optimal thickness for the doping effect was also identified and explained. Finally a device with fundamental structure of ITO/PEDOT:PSS (55nm)/PVK (90nm)/meso-tetraphenylporphyrin (TPP): Q2SnCl2 (75nm)/ Al (180nm) was fabricated and its electroluminescence performance at various concentrations of dye has been investigated. It is shown that this new method is promising candidate for fabrication of low cost OLEDs at more homogeneous layer.
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Huang, Chun Lei, Lun Yao Wang, Hao Liang, and Yin Shui Xia. "A Design of Three-Input Low-Power AND/XOR Complex Gate." Applied Mechanics and Materials 687-691 (November 2014): 3149–52. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3149.

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For the deficiencies of the existing complex circuit designs, a novel transistor-level three-input AND/XOR logic complex gate with simple and symmetry structure is proposed. HPSICE simulation results show that the proposed circuit has correct operation. Further, in 55nm process CMOS technology, compared with the conventional cell-based cascaded AND/XOR circuit at different operation frequencies, the proposed circuit has a significant improvement at delay, power consumption and power delay product (PDP).
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dos Santos, Claudinei, Paula Cipriano da Silva, Luciane Carvalho de Paula, Alexandre Fernandes Habibe, Jefferson Fabrício C. Lins, and Walter Soares. "Characterization of Commercial Co-Cr-Alloy Powder Used in Selective Laser Sintering." Materials Science Forum 802 (December 2014): 329–33. http://dx.doi.org/10.4028/www.scientific.net/msf.802.329.

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This paper presents the microstructural characterization of particle systems used in equipment for selective laser sintering. Three distinct commercial metal powders, with chemical composition based on Co-Cr-alloy, were characterized by X-ray diffraction, scanning electron microscopy and particle size distribution. The powders showed regular spherical particles with varying sizes and crystalline phase of Co-solid solution. Different powders present particle size among 55nm and 245 nm. This behavior affects the sinterability of samples submitted to the selective laser sintering.
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Bera, Lakshmi Kanta, Navab Singh, Ze Yu Chen, Calvin Chua Hung Ming, King Jien Chui, Ravinder Pal Singh, Yee Ye Sheng, et al. "Multi-Layer High-K Gate Stack Materials for Low D<sub>it</sub> 4H-SiC Based MOSFETs." Materials Science Forum 1062 (May 31, 2022): 528–32. http://dx.doi.org/10.4028/p-oajc69.

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Metal-oxide-semiconductor capacitors with single and multi-layer high-K gate dielectrics on Si (0001) face of n-type 4H-SiC substrates have been investigated. Multi-layered nanolaminated gate-stack comprises alternating ultrathin (6nm) Al2O3 and HfO2. A 5nm thick interfacial silicon oxynitride is deposited prior to laminated films to investigate interface trap properties and tuning of flat band voltage. Total thickness of gate-stack films including interfacial layer is 55nm. The thermal stability of multi-layered nanolaminated film is investigated using XTEM. Localized crystallization of HfO2 is visible after RTA at 900°C while Al2O3 remains fully amorphous. Some of HfO2 grains have extended into Al2O3 layer but was not able to crossover. The measured accumulation capacitance of 55nm thick gate dielectric gives an effective dielectric constant value of 9.6 and an equivalent oxide thickness of 22nm from high-frequency capacitance-voltage measurements. A positive flat band voltage ( of 12.2V and 10.6V are observed from both single layer HfO2 and Al2O3 dielectrics, respectively due to presence of negatively charged oxygen interstitial defects generated during atomic layer deposition process. However, VFB shifted towards negative voltage-7.6V for multi-layered Al2O3/HfO2 stacks probably associated with positive Al and Hf interstitials at interface of Al2O3/HfO2. Ultrathin interfacial oxynitride films is effective to reduce Dit to 3×1011/eVcm2 and tuning of VFB. The breakdown field of stacked gate dielectric on 4H-SiC is 10.0 MV/cm.
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Guo, Xuanchen, Suge Yue, Jiancheng Li, Tao Zhou, and Qichao Zha. "Total ionizing dose effects on data retention characteristics of 55nm SONOS flash." Journal of Physics: Conference Series 1983, no. 1 (July 1, 2021): 012061. http://dx.doi.org/10.1088/1742-6596/1983/1/012061.

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Быкова, Л. Е., С. М. Жарков, В. Г. Мягков, Ю. Ю. Балашов, and Г. С. Патрин. "Формирование интерметаллида Cu-=SUB=-6-=/SUB=-Sn-=SUB=-5-=/SUB=- в тонких пленках Cu/Sn." Физика твердого тела 63, no. 12 (2021): 2205. http://dx.doi.org/10.21883/ftt.2021.12.51685.139.

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The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55nm)/Cu(30nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300 °C and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.
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Deng, Marina, Thomas Quémerais, Simon Bouvot, Daniel Gloria, Pascal Chevalier, Sylvie Lépilliet, François Danneville, and Gilles Dambrine. "Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz." Solid-State Electronics 129 (March 2017): 150–56. http://dx.doi.org/10.1016/j.sse.2016.11.012.

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Centurelli, Francesco, Pietro Monsurrò, Giuseppe Scotti, Pasquale Tommasino, and Alessandro Trifiletti. "10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology." Electronics 9, no. 4 (March 28, 2020): 563. http://dx.doi.org/10.3390/electronics9040563.

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Multi-GHz lowpass filters are key components for many RF applications and are required for the implementation of integrated high-speed analog-to-digital and digital-to-analog converters and optical communication systems. In the last two decades, integrated filters in the Multi-GHz range have been implemented using III-V or SiGe technologies. In all cases in which the size of passive components is a concern, inductorless designs are preferred. Furthermore, due to the recent development of high-speed and high-resolution data converters, highly linear multi-GHz filters are required more and more. Classical open loop topologies are not able to achieve high linearity, and closed loop filters are preferred in all applications where linearity is a key requirement. In this work, we present a fully differential BiCMOS implementation of the classical Sallen Key filter, which is able to operate up to about 10 GHz by exploiting both the bipolar and MOS transistors of a commercial 55-nm BiCMOS technology. The layout of the biquad filter has been implemented, and the results of post-layout simulations are reported. The biquad stage exhibits excellent SFDR (64 dB) and dynamic range (about 50 dB) due to the closed loop operation, and good power efficiency (0.94 pW/Hz/pole) with respect to comparable active inductorless lowpass filters reported in the literature. Moreover, unlike other filters, it exploits the different active devices offered by commercial SiGe BiCMOS technologies. Parametric and Monte Carlo simulations are also included to assess the robustness of the proposed biquad filter against PVT and mismatch variations.
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Yang, Wei, Chun Xiang Cui, Qiao Zhi Liu, and Ji Bing Sun. "Fabrication and Characterization of Integrated Ultrahigh-Density Pt Nanowire Arrays within the AAO Template." Materials Science Forum 789 (April 2014): 1–5. http://dx.doi.org/10.4028/www.scientific.net/msf.789.1.

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The parallel Pt nanowires with highly ordered array and the length more than a dozen micrometers were prepared by the direct current electro-deposition in porous anodic aluminum oxide (AAO) templates. The deposition was performed in a aqueous solution of the Pt (NO2)2(NH3)2 composite electrolyte. The images and structure of Pt nanowire arrays were obtained by field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM), respectively. Selected area electron diffraction (SAED) are employed to study the crystalline morphology of Pt nanowire arrays. The relationship between the nanowires length and electro-deposition time was discussed. Their growth speed is about 0.5μm/h. The TEM micrographs show that these nanowires have uniform diameter of approximate 55nm. SAED pattern reveals that the Pt nanowire has a polycrystalline structure.
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Dissertations / Theses on the topic "55nm"

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Serhan, Ayssar. "Conception et réalisation de fonctions millimétriques en technologie BiCMOS 55nm." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT077/document.

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Au cours des dernières années, la faisabilité des émetteurs-récepteurs millimétriques entièrement intégrés a été largement démontrée en technologies silicium CMOS et BiCMOS. Deux axes sont actuellement très porteurs dans ce domaine : (1) l’amélioration des performances à travers des boucles d’asservissement intégrées (ALC : Automatique Level Control), (2) le développement de solutions de caractérisation sur silicium des composants millimétriques (BIT : Built In Test). L’objectif principal de cette thèse est de développer les blocsde base (détecteurs de puissance et baluns) pour répondre aux besoins actuels des applications ALC et BIT. Les circuits réalisés combinent l’avantage de composants actifs de la technologie BiCMOS 55 nm, de STMicroelectronics, avec l’avantage des structures passives à ondes lentes développées à l’IMEP-LAHC. Ce travail permet un développement plus rapide et robuste pour la future génération de systèmes millimétriques
In the past few years, the feasibility of high performance millimeter-wave(mmWave) fully-integrated transceivers has been widely demonstrated in both CMOS andBiCMOS silicon technologies. Nowadays, automatic level control (ALC) solutions and in-situtesting (BIT: Built in Testing) and characterization of mmWave components, constitute themajor research interest in mmWave domain. This work focus on the development of the mainbuilding blocks (power detectors and baluns) that meet the requirement of the today’smmWave ALC and BIT applications. The developed prototypes take advantage of the highperformances transistors offered by the BiCMOS 55 nm technology, from STMicroelectronics, aswell as the high performances of the slow-wave based passive components developed by theIMEP-LAHC laboratory. Several prototypes were developed as a proof of concept for thedesignated applications. This work helps future generation millimeter-wave systems to havefaster development and better robustness
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RAHIMI, TAKAMI ELHAM. "High-Efficiency E-band Power Amplifiers and Transmitter in 55nm BiCMOS." Doctoral thesis, Università degli studi di Pavia, 2019. http://hdl.handle.net/11571/1243913.

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This thesis presents the development of a new kind of power amplifiers and the design of a full E-band Transmitter designed in the analog integrated circuit laboratory of the University of Pavia. The mobile network structure is going to change drastically in the next years to handle the escalating needs for new standards and applications. Consequently, also the backhaul, i.e. the links connecting base stations to the central network, will undergo several modifications to allow higher performances in terms of speed and number of users and good quality of service. The power amplifiers presented in this work have been designed specifically to satisfy the requirements of the future backhaul transceivers, overcoming many challenging aspects of power amplifiers design at mm-Wave (30-300 GHz). The power amplifier is the most power hungry block of E-band transmitters for backhauling. Especially, an idea for improving the power efficiency with emphasis in back-off region (i.e. when the power amplifier delivers output power lower than the peak value) has been proposed. The idea exploits a common-base transistor in the output stage, where the BE junction performs current-clamping to adjust the average (DC) current according to the actual output power. Two prototypes have been realized in 55nm SiGe-BiCMOS technologies, demonstrating performances beyond the state-of-the-art. In the single-path PA, Psat is 19dBm while OP1dB is 18dBm. The measured PAE peaks to 23% while at OP1dB and 6dB back-off it is 22% and 8.5%, respectively. The measured Psat and OP1dB for dual-path PA are 21.5dBm and 20.5dBm, 2.5dB higher than for the single-path PA. The maximum PAE is 22% while PAE at OP1dB and 6dB back-off is 20% and 7.2%, respectively. As second major contribution, a direct conversion E-band transmitter focusing on signal path including up-conversion mixers and PAs has been designed and realized in 55nm SiGe-BiCMOS technology. Optimizations are performed from architecture level down to transistor level to minimize the power consumption while delivering high linear output power. The measured OP1dB and maximum output power for the realized E-band transmitter are 20.3dBm and 22dBm, respectively. The image rejection ratio of transmitter without baseband calibration is 40dBc (above 50dBc with baseband calibration) while the bandwidth is in the frequency range of 66-88GHz.
This thesis presents the development of a new kind of power amplifiers and the design of a full E-band Transmitter designed in the analog integrated circuit laboratory of the University of Pavia. The mobile network structure is going to change drastically in the next years to handle the escalating needs for new standards and applications. Consequently, also the backhaul, i.e. the links connecting base stations to the central network, will undergo several modifications to allow higher performances in terms of speed and number of users and good quality of service. The power amplifiers presented in this work have been designed specifically to satisfy the requirements of the future backhaul transceivers, overcoming many challenging aspects of power amplifiers design at mm-Wave (30-300 GHz). The power amplifier is the most power hungry block of E-band transmitters for backhauling. Especially, an idea for improving the power efficiency with emphasis in back-off region (i.e. when the power amplifier delivers output power lower than the peak value) has been proposed. The idea exploits a common-base transistor in the output stage, where the BE junction performs current-clamping to adjust the average (DC) current according to the actual output power. Two prototypes have been realized in 55nm SiGe-BiCMOS technologies, demonstrating performances beyond the state-of-the-art. In the single-path PA, Psat is 19dBm while OP1dB is 18dBm. The measured PAE peaks to 23% while at OP1dB and 6dB back-off it is 22% and 8.5%, respectively. The measured Psat and OP1dB for dual-path PA are 21.5dBm and 20.5dBm, 2.5dB higher than for the single-path PA. The maximum PAE is 22% while PAE at OP1dB and 6dB back-off is 20% and 7.2%, respectively. As second major contribution, a direct conversion E-band transmitter focusing on signal path including up-conversion mixers and PAs has been designed and realized in 55nm SiGe-BiCMOS technology. Optimizations are performed from architecture level down to transistor level to minimize the power consumption while delivering high linear output power. The measured OP1dB and maximum output power for the realized E-band transmitter are 20.3dBm and 22dBm, respectively. The image rejection ratio of transmitter without baseband calibration is 40dBc (above 50dBc with baseband calibration) while the bandwidth is in the frequency range of 66-88GHz.
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BARTESELLI, EDOARDO. "Accurate Voltage Reference Generator for Audio Interface in 65/55nm CMOS Technology." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2022. http://hdl.handle.net/10281/364988.

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Negli ultimi anni i dispositivi mobili sono molto complessi e ricchi di funzionalità che consumano molta energia. Per questo motivo, l'industria elettronica sta spingendo verso la riduzione del consumo di energia e corrente nei dispositivi elettronici per aumentare la durata della batteria. Tutto va fatto mantenendo le stesse prestazioni o migliorandole. Questa tesi presenta un accurato generatore di riferimento di tensione per interfaccia audio in tecnologia CMOS a 65/55nm e particolare attenzione è stata posta al consumo di corrente. Il riferimento è costituito da un riferimento di tensione Bandgap e da un regolatore Low Dropout. La topologia scelta per il bandgap è un bandgap in modalità di corrente con resistore di uscita regolabile. Ciò garantisce una tensione di riferimento inferiore a 1.2V grazie alla somma di due correnti invece di due tensioni. È stato scelto un doppio circuito per il regolatore LDO per garantire una rapida risposta ai transitori. Innanzitutto, il generatore di riferimento di tensione è stato simulato in tecnologia CMOS a 65nm. Nelle simulazioni a 65 nm tutte le specifiche mirate sono state raggiunte con successo. Per BG, il consumo di corrente è inferiore a 5uA, DC PSR inferiore a -60dB e un coefficiente di temperatura di circa 5ppm/°C. L'LDO ha un tempo di assestamento inferiore a 150ns, un PSR inferiore a -70dB nella banda audio ([20, 20K]Hz) e un consumo energetico inferiore a 10uA. Quindi, è stato simulato e misurato con la tecnologia CMOS a 55nm e sono stati sviluppati e testati tre diversi prototipi. I risultati non sono buoni come quelli a 65nm perché questa è stata la prima volta che la tecnologia è stata utilizzata. Quindi, i tre chip di test sviluppati sono stati utilizzati per comprendere il comportamento della tecnologia e per confrontare le simulazioni con le misurazioni, ma ogni chip di test rappresenta un miglioramento rispetto al precedente. L'ultimo chip di prova presenta un PSR molto vicino alle specifiche sia per il BG che per l’LDO e un consumo di corrente di 5uA per il BG, 10uA per l’LDO NM e 5uA per l’LDO LP.
In recent years, mobile devices are very complex and feature-rich that consume a lot of energy. For this reason, the electronics industry is pushing towards reducing power and current consumption in electronic devices to increase battery life. Everything has to be done while maintaining the same performance or improving it. This thesis presents an accurate voltage reference generator for audio interface in CMOS technology at 65/55nm and particular attention has been paid to current consumption. The reference is made up of a Bandgap voltage reference and a Low Dropout regulator. The topology chosen for the bandgap is a current mode bandgap with adjustable output resistor. This guarantees a reference voltage of less than 1.2V thanks to the sum of two currents instead of two voltages. A double loop was chosen for the LDO regulator to ensure rapid transient response. First, the voltage reference generator was simulated in CMOS technology at 65nm. In the 65nm simulations all targeted specifications were successfully achieved. For BG, power consumption is less than 5uA, DC PSR lower than -60dB and a temperature coefficient around 5ppm/°C. The LDO has a fast settling time lower 150ns, a PSR of less than -70dB in the audio band ([20, 20K]Hz) and a power consumption of less than 10uA. Then, it was simulated and measured with 55nm CMOS technology and three different prototypes were developed and tested. The results are not as good as the 65 nm results because this was the first time the technology was used. Then, the three developed test chips were used to understand the behavior of the technology and to compare simulations with measurements, but each test chip is an improvement on the previous one. The latest test chip features PSR very close to specifications for BG and LDO and power consumption of 5uA for the BG, 10uA for the LDO NM and 5uA for the LDO LP.
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BOZORGI, MOOZIRAJI FARHAD. "High Speed 3D-Integrated Silicon Photonic Optical Receivers in PIC25G and BiCMOS-55nm Technology." Doctoral thesis, Università degli studi di Pavia, 2020. http://hdl.handle.net/11571/1329173.

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This thesis presents 2 versions of 3D-integrated Opto-Electrical Receiver (RX) front-end: RX-I and the RX-II. The Electronic Integrated Circuit (EIC) in both RX is fabricated in a BiCMOS-55nm technology, flipped and placed on top of the Photonic Integrated Circuits (PIC) die through copper pillars. In RX-I chain, a Fully Differential Shunt-Feedback Trans-Impedance Amplifier (FD-SF TIA) is followed by a Limiting Amplifiers (LA) with embedded equalization, output driver and an automatic offset cancellation loop. The whole receiver provides a Trans-Impedance (TI) gain of 76dBΩ with 30GHz bandwidth. By exploiting the FD-SF TIA with low parasitic capacitance of the Germanium dual heterojunction Photo Diode (Ge-PD) in the photonic die, the receiver achieves sensitivity of -15.2dBm OMA at Ge-PD and -10dBm OMA at the Single Mode Fiber (SMF) optical output with Bit Error Rate of 10-12 and PRBS 15. The sensitivity is aligned with state-of-the-art receivers employing discrete photonics and, to authors best knowledge, it is the lowest reported among published 25Gbps receivers exploiting silicon photonics. RX-II is an optical receiver operating up to 50Gbps and reaches OMA sensitivity of 7.5dBm at Germanium dual heterojunction Photo Diode (Ge-PD) with BER of 10-12, PRBS 7 and energy efficiency of 1.8pj/bit. The Analog Front-End (AFE) in the receiver benefits from a modified form of active feedback structure, proposed in the Limiting Amplifier (LA) to maintain high bandwidth also at large input signal, key to avoid Inter Symbol Interference (ISI) and Data Dependent Jitter (DDJ). Moreover, the Fully-Differential Shunt Feedback Trans-Impedance Amplifier (FD-SF TIA) proposed in RX-I at half the data-rate has also been exploited to reduce the input referred noise and improve the sensitivity.
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Iskandar, Zyad. "Système de formation de faisceau dans la bande 300 GHz en technologie BiCMOS 55nm pour l’imagerie THz." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT072/document.

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La bande sub-millimétrique allant globalement de 300 GHz à 3 THz possède des propriétés similaires à la capacité de pénétration de photons non ionisants à travers des matériaux optiquement opaques. Pour l'imagerie THz, il est ainsi possible de détecter des objets cachés à l'intérieur de paquets, de vêtements ou de matelas... Avec l’évolution des technologies intégrées et l’augmentation des fréquences de coupure des transistors 〖(f〗_t/f_max), de nombreux circuits et systèmes ont été réalisés à des fréquences autour de 300 GHz, en particulier les systèmes de formation de faisceau. Ces systèmes permettent de générer un signal et de l’orienter électroniquement dans une direction définie de l’espace. Dans ce travail, une architecture originale d’un tel système est proposée. Elle repose sur la génération d’un signal dans la bande 270-300 GHz, tout en contrôlant sa phase à l’aide de déphaseurs implémentés au niveau de la voie LO dans la bande 45-50 GHz. La complexité du système impose une stratégie qui consiste à réaliser chaque bloc seul. Pour cela, l’émetteur dans la bande 270-300 GHz a été réalisé dans un premier temps. Il est composé d’un oscillateur verrouillé par injection sous-harmonique (45-50 GHz), d’un mélangeur passif et d'amplificateurs IF. Ensuite une architecture innovante de déphaseur a été réalisée, basée sur des lignes couplées à ondes lentes. Finalement, une chaîne de multiplication de fréquence a été réalisée afin de générer le signal d’injection à l’aide d’un signal basse fréquence (3-5 GHz). Les circuits ont été fabriqués en technologie BiCMOS 55 nm de STMicroelectronics. Les résultats de mesure correspondent sont en très bon accord avec les simulations, et les performances obtenues sont à l’état de l’art. Une fois les blocs élémentaires validés, des sous-systèmes ont été réalisés pour valider le bon fonctionnement d’une voie complète du réseau d'antennes. En termes de perspectives, ce travail ouvre la voie vers la conception et la réalisation d'un système complet d'orientation de faisceau contenant plusieurs voies/antennes
The sub-millimeter wave band that covers the frequency range from 300 GHz to 3 THz has an interesting properties such the ability to penetrate materials. For THz imaging, it is possible to detect objects inside packages, clothes... With the evolution of integrated technologies and the increase of the cut-off frequencies of transistors 〖(f〗_t/f_max), many circuits and systems have been fabricated around 300 GHz, especially phased arrays for beamforming applications. These systems generate a signal and steer it electronically in a direction of the space. In this work, a novel architecture of phased array is proposed. It is based on the generation of a signal in the 270-300 GHz band, while controlling its phase by using phase shifters implemented in the LO path in the 45-50 GHz band. Each bloc should be measured in a stand-alone version, in order to get an idea about whole system performances. For this, the transmitter in the 270-300 GHz band has been realized first. It consists of a sub-harmonic injection locked oscillator, a passive mixer and IF amplifiers. Then, a novel architecture of phase shifter was proposed, it is based on slow waves coupled lines. Finally, a frequency multiplier chain was performed to generate the injection signal by using a lower frequency signal (3-5 GHz). The circuits are fabricated in a 55nm BiCMOS technology from STMicroelectronics. Measurements results are in a good agreement with simulations. Once the blocks are validated, sub systems are realized in order to validate one path of the array. The perspectives of this work include the design and realization of the complete phased array with multiple paths/antennas
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LACAITA, NICCOLO' RAFFAELE. "Design And Optimization Of A K-Band Low-Noise Bipolar Class-C VCO For 5G Backhaul Systems in 55nm BiCMOS Technology." Doctoral thesis, Università degli studi di Pavia, 2018. http://hdl.handle.net/11571/1214839.

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The demand for an enriched end-user experience and increased performance in next generation electronic applications is never ending, and it is a common trend for a wide spectrum of applications owing to different markets, like computing, mobile communication and automotive. For this reason wireless transceivers have become widespread components for nowadays electronics with a constant demand for power reduction and data-rate increase. Data-rates in wireless communications have been steadily increasing with on-chip processing rate and logic density both in network applications and in hard-disk interconnects. The data-rates are now exceeding 1-Gbps and are expected to grow exponentially in next years as new standards are released together with the enormous amount of unlicensed bandwidth in the E-Band spectrum (71-76 GHz and 81-86 GHz bands). The development of 5G communication systems is underway. Point-topoint wireless links in the E-Band can provide high data-rate, easily deployable, cheap and flexible Backhaul solutions, important enablers for the mobile network evolution towards 5G network. The development of CMOS/BiCMOS integrated transceivers for E-Band Backhaul applications can help reducing the cost and footprint of the equipment, but presents design challenges, mostly related to the use of adaptive spectrally-efficient high-order modulations, which mandate high linearity and low Phase-Noise. In example when employing 64- Quadrature Amplitude Modulation (64-QAM), very low Phase-Noise levels are required to limit Error Vector Magnitude (EVM) - i.e. less than -117 dBc/Hz at 1-MHz offset from f = 20 GHz carrier. In the frame of gigabit wireless systems, the work discussed in this thesis concerns with local-oscillator (LO) generation requirements for E-Band Backhaul applications spanning from the concept of the circuit to its implementation. Phase-Noise specifications for the frequency synthesizer are identified, and design and optimization of VCOs performance is proposed. A K-Band Class-C VCO is proposed as key block of the frequency synthesizer. It achieves ultra-low Phase-Noise performance, while still achieving a wide Tuning-Range (TR), essential feature in E-Band communication standards. The choice between CMOS Versus BJT devices is investigated and the impact of the intrinsic Base-Resistance (rb) in BJT-based VCOs is addressed. BJT-based VCO shows ∼2dB better Phase-Noise when compared to CMOS-based VCO and low supply is employed. When higher supply is leveraged, BJT-based VCO advantage is kept while CMOS-based VCO is not able to reach the targeted Tuning-Range due to thick oxide devices parasitics. The challenges of achieving such a low Phase-Noise are discussed in detail, with particular emphasis on the minimization of L/QT, inductor versus Quality-Factor ratio. Prototypes have been realized in a 55nm BiCMOS technology. Operated at 2.5 V supply with the largest amplitude allowed by reliability constraints, measurements show a Phase-Noise as low as -119 dBc/Hz at 1-MHz offset from a 20-GHz carrier with a Tuning-Range of 19% and Figure of Merit (FoM) of -187 dBc/Hz. Power consumption is 56 mW. This dissertation demonstrates advances over State-Of-The-Art primarily in terms of low Phase-Noise performance, and shows how the proposed circuit is suitable as local-oscillator building block in direct-conversion E-Band Backhaul transceivers. The work has been performed in the Analog Integrated Circuits Laboratory (AICLab) of Universit´a degli Studi di Pavia in collaboration with STMicroelectronics and Huawei. The dissertation is part of broader efforts to demonstrate and design a complete 5G E-Band transmitter.
The demand for an enriched end-user experience and increased performance in next generation electronic applications is never ending, and it is a common trend for a wide spectrum of applications owing to different markets, like computing, mobile communication and automotive. For this reason wireless transceivers have become widespread components for nowadays electronics with a constant demand for power reduction and data-rate increase. Data-rates in wireless communications have been steadily increasing with on-chip processing rate and logic density both in network applications and in hard-disk interconnects. The data-rates are now exceeding 1-Gbps and are expected to grow exponentially in next years as new standards are released together with the enormous amount of unlicensed bandwidth in the E-Band spectrum (71-76 GHz and 81-86 GHz bands). The development of 5G communication systems is underway. Point-topoint wireless links in the E-Band can provide high data-rate, easily deployable, cheap and flexible Backhaul solutions, important enablers for the mobile network evolution towards 5G network. The development of CMOS/BiCMOS integrated transceivers for E-Band Backhaul applications can help reducing the cost and footprint of the equipment, but presents design challenges, mostly related to the use of adaptive spectrally-efficient high-order modulations, which mandate high linearity and low Phase-Noise. In example when employing 64- Quadrature Amplitude Modulation (64-QAM), very low Phase-Noise levels are required to limit Error Vector Magnitude (EVM) - i.e. less than -117 dBc/Hz at 1-MHz offset from f = 20 GHz carrier. In the frame of gigabit wireless systems, the work discussed in this thesis concerns with local-oscillator (LO) generation requirements for E-Band Backhaul applications spanning from the concept of the circuit to its implementation. Phase-Noise specifications for the frequency synthesizer are identified, and design and optimization of VCOs performance is proposed. A K-Band Class-C VCO is proposed as key block of the frequency synthesizer. It achieves ultra-low Phase-Noise performance, while still achieving a wide Tuning-Range (TR), essential feature in E-Band communication standards. The choice between CMOS Versus BJT devices is investigated and the impact of the intrinsic Base-Resistance (rb) in BJT-based VCOs is addressed. BJT-based VCO shows ∼2dB better Phase-Noise when compared to CMOS-based VCO and low supply is employed. When higher supply is leveraged, BJT-based VCO advantage is kept while CMOS-based VCO is not able to reach the targeted Tuning-Range due to thick oxide devices parasitics. The challenges of achieving such a low Phase-Noise are discussed in detail, with particular emphasis on the minimization of L/QT, inductor versus Quality-Factor ratio. Prototypes have been realized in a 55nm BiCMOS technology. Operated at 2.5 V supply with the largest amplitude allowed by reliability constraints, measurements show a Phase-Noise as low as -119 dBc/Hz at 1-MHz offset from a 20-GHz carrier with a Tuning-Range of 19% and Figure of Merit (FoM) of -187 dBc/Hz. Power consumption is 56 mW. This dissertation demonstrates advances over State-Of-The-Art primarily in terms of low Phase-Noise performance, and shows how the proposed circuit is suitable as local-oscillator building block in direct-conversion E-Band Backhaul transceivers. The work has been performed in the Analog Integrated Circuits Laboratory (AICLab) of Universit´a degli Studi di Pavia in collaboration with STMicroelectronics and Huawei. The dissertation is part of broader efforts to demonstrate and design a complete 5G E-Band transmitter.
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Newman, Richard Thomas. "Single proton transfer on 55Mn." Doctoral thesis, University of Cape Town, 1996. http://hdl.handle.net/11427/18383.

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Differential cross sections for the ⁵⁵Mn(d,³He)⁵⁴Cr and ⁵⁵Mn(d,d)⁵⁵Mn(g.s.) reactions at Ed = 45.6 MeV were measured in the 6°-48° angular region (laboratory frame) using a k = 600 MeV magnetic spectrometer with a resolution of ~40 keV (full-width at half maximum). Spectroscopic factors associated with the observed transitions to twenty-four ⁵⁴Cr final states up to 6.107 MeV excitation were determined from local, zero-range distorted-wave Born approximation (DWBA) analyses of the measured angular distributions, allowing for l = 0, 1, 2 and 3 transfers. An optical-model analysis of the (d,d) data has been performed in order to yield optimum values of the potential parameters required for calculating the distorted wave-functions associated with the entrance channel.
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Tarazona, Coronel Heisemberg Samuel. "Estudio de los modos resonantes ferromagnéticos del sistema válvula de espín IrMn(151515nm)/Co(555nm)/Ru(ttt)/NiFe(555nm) (t=2.4,3.2,20 nm)." Bachelor's thesis, Universidad Nacional Mayor de San Marcos, 2015. https://hdl.handle.net/20.500.12672/4418.

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En el presente trabajo se hace un estudio teórico de la resonancia ferromagnética en un tipo especial de multicapa magnética llamada “válvula de espín”. Dicha válvula de espín consiste de dos capas ferromagnéticas separadas por un espaciador no magnético que en conjunto se encuentran sobre un substrato antiferromagnético. Respecto a la válvula de espín es bien sabido que el espesor del espaciador no magnético juega un rol clave en el comportamiento electrónico y magnético de esta multicapa, la cual, en ausencia de un campo externo, da lugar a la existencia de un acoplamiento entre las magnetizaciones de las capas ferromagnéticas. Para estudiar este acoplamiento magn´etico se hace uso de la ecuación de Landau-Lifshitz ya que ésta describe muy bien la dinámica de la magnetización y su evolución temporal, donde la frecuencia de precesión de la magnetización está determinada por el campo interno local Heff. Este campo proviene de distintas fuentes tales como: anisotropías de forma, magnetocristalina, de superficie y campo externo. Por ende,siguiendo el modelo de Smity Beljers [Smit55],se puede utilizar la energía libre total del sistema para obtener el campo efectivo interno Heff y resolver la ecuación de Landau-Lifshitz para pequeñas osilaciones de la magnetización. Como resultado, se obtiene la relación de dispersión en la que se encuentra implícita la dependencia entre la frecuencia de resonancia y el campo externo; que está en buen acuerdo con lo publicado en la literatura [Layadi 05],[Zhang 94].Por otro lado, si se mantiene fija la frecuencia de resonancia f, se obtiene el campo de resonancia en función de su orientación dentro del plano de las capas, las cuales se encuentran también en buen acuerdo con lo publicado [Azevedo 05]. Además cabe resaltar que estos resultados teóricos se han utilizado para el estudio del sistema IrMn/Co/Ru(t)/FeNi [Alayo 11], para distintos espesores t de la capa no magnética, identificándose tres tipos de acoplamiento de intercambio intercapa o fuerza de acoplamiento J. Para t=200 ˚A se observa una simetría en la dependencia angular del campo de resonancia indicando que no existe un acoplamiento entre las capas magnéticas debido al gran espesor de la capa espaciadora. Para t=32 ˚A se observa un acoplamiento antiferromagnético; es decir, las magnetizaciones se encuentran alineadas antiparalelamente en el cual hay una gran contribución del acoplamiento bicuadrático. Finalmente, para t=24 ˚A se observa un acoplamiento paralelo o ferromagnético de las magnetizaciones.
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9

Straka, Martin. "Výpočtové modelování vysokofrekvenčního hluku v kabině letounu EV-55M." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2013. http://www.nusl.cz/ntk/nusl-230560.

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This thesis describes methods of high frequency noise and vibrations computation of cabin part of EV–55M (aircraft developed by Evektor Kunovice). There is a brief summary of methods used for determining high frequency noise and vibrations in the first part of the thesis. Detailed explanation is given for Statistical Energy Analysis (SEA) which is nowadays the most dominant method in this area. The energy balance equation is derived in this chapter and SEA parameters such as modal density, damping loss factor, coupling loss factor and power input are introduced here. Next part deals with main noise sources of propeller driven and jet aircraft and passive and active noise controls are discussed. Practical part of this thesis deals with modeling aircraft EV–55M fuselage using VA One SEA module. Two models were created. First of them is only an outside fuselage with aircraft flooring and the second one is extended by interior trim panels and is applicable for simulation of noise control treatments. Computational modeling is accompanied by experimental measurement of passive noise control material characteristics. Postprocessing of information obtained from impedance tube measurement was performed in FOAM – X. Determined characteristics of porous material were used as inputs to VA One and reduction of sound pressure level in fuselage cavities by using noise control treatment was found. In conclusion there is a summary of noise transmission paths from sources to interior cavity and some treatments of them are simulated
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Paranthoën, Cyril. "Croissance et caractérisations des boites quantiques InAs sur substrat InP (113) B pour la réalisation d'un laser émettant à 1. 55um." Rennes, INSA, 2001. http://www.theses.fr/2001ISAR0014.

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Books on the topic "55nm"

1

Trewartha, Justin. North Carolina End-of-Course Coach, English 1 (55NC). Triumph Learning, 2007.

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Blanco, Andros Villanueva. 5 : 55am: Obra de Fusión Experimental de Narrativa Clásica y Teatro. Independently Published, 2017.

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SCHULBERG, JAY. The Milk Mustache Book (Abridged - Scholastic/55M): A Behind-The-Scenes Look at America's Favorite Advertising Campaign. Ballantine Books, 1999.

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16th Birthday Gifts Birthday Gifts Journals and Notebooks. Thank You for All the Memories We Have Happy 55th Birthday: Lined Journal, Notebook, Diary,120 Pages, 8. 5x11, Happy 55th Birthday, 55nd Birthday Gifts for Women Men. Independently Published, 2021.

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Book chapters on the topic "55nm"

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Papavassiliou, G., M. Belesi, M. Fardis, C. Dimitropoulos, M. Pattabiraman, and G. Rangarajan. "Orbital Order and Orbital Fluctuations in Colossal Magnetoresistive Manganites. An Investigation with 55Mn and 139La NMR." In Magnetic Resonance in Colloid and Interface Science, 231–43. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0534-0_18.

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Horibe, O., and H. Chatani. "Cross Sections of the Reactions 55Mn(n,2n)54Mn, 58Ni(n,2n)57Ni and 58Ni(n,np )57Co Averaged over the U-235 Fission Neutron Spectrum." In Nuclear Data for Science and Technology, 68–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-58113-7_18.

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Mbuh, Mbongowo J., Paul R. Houser, and Ako Heidari. "Water Quality Estimation Using Combined Water Chemistry and Field Spectroscopy in the Shenandoah River, Virginia." In Environmental Information Systems, 1561–86. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-7033-2.ch071.

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This study investigated the spatial dynamics of water quality across the Shenandoah River basin using spectroscopy and chemometrics to estimate chlorophyll (Chl), colored dissolved organic matter (CDOM) and turbidity using three band combinations and nutrients (total nitrogen and total phosphorous) in the Shenandoah River. The mean Chl a concentration for 555 nm, 560 nm and 640 nm were; 0.31 μg/l, 0.33 μg/l, and 0.51 μg/l respectively. Chlorophyll a showed strong correlations at band 640 (r = 0.92). The bands centered at 670/490 were the best in predicting CDOM and turbidity in the Shenandoah River Basin with an r2 = 0.56. Chemometrics analysis show that total phosphorous, nitrogen and turbidity can be predicted between 450 to 555nm and 670 to 710 nm, the range of wavelengths which indicated better predictability for spectroscopic analysis. The resultant concentration is used to develop predictive models to determine sensitive spectral variables for nitrogen, phosphorous, Chl-a, and CDOM.
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"FIG. 6 ) STRESS-STRAIN RELATION (STRAIN MEASURED ON THE 55cm OF THE COLUMN LENGTH )." In Protection of Concrete, 991–92. CRC Press, 1990. http://dx.doi.org/10.1201/9781482267037-319.

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Hamerow, Helena. "Houses and Households: The Archaeology of Buildings." In Early Medieval Settlements. Oxford University Press, 2002. http://dx.doi.org/10.1093/oso/9780199246977.003.0006.

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As Rapoport suggests, a house is more than merely a shelter against the elements. The built environment and the way space is organized within the house reflect and reinforce social organization. While this is obviously true of the great hall in Beowulf, it is equally, if less obviously, true of ordinary houses. If, furthermore, we are to assess the economic conditions and daily life of the early Middle Ages, we need to understand the nature of the buildings in which people lived and worked. Indeed, the study of early medieval settlements in northwest Europe has traditionally been dominated by the study of buildings, chiefly for two reasons: first, on a small number of waterlogged sites, buildings (which were, with few exceptions, constructed entirely of timber) are extraordinarily well preserved, with walls standing in some cases up to a metre or more in height (Fig. 2.1); and second, other categories of artefacts, with the exception of pottery, are usually scarce. In the great majority of settlements, floor layers contemporary with the use of the buildings have been destroyed by later erosion or ploughing, and only the debris which collected or was discarded in pits and ditches survives. Even where none of the timber superstructure survives, the ground-plans of these buildings, etched into the subsoil as patterns of postholes, reveal that they could be imposing structures. A fifth-century longhouse at Flögeln-Eekhöltjen (Lower Saxony) measured an extraordinary 63.5 m in length (Zimmermann 1992a, 139). A seventh- to tenth-century hall at Lejre (on the island of Zealand) was comparable in floor area (over 550m<sup>2</sup>) to the halls of the Carolingian palaces at Paderborn and Frankfurt, and is estimated to have stood up to 4 metres in height (Fig. 2.2; Christensen 1991; Winkelmann 1971; Stamm 1955). Of similarly lofty dimensions was a Migration period hall recently excavated at Gudme, on Funen, whose main roof-supporting posts were set into massive pits (Figs. 2.3 and 2.4). The fact that these timber buildings have naturally fared less well in the archaeological record than their more durable stone counterparts in former imperial territories has often led to gross underestimates of their size, complexity, and quality.
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"FIG. (4) STRESS-STRAIN RELATION (STRAIN MEASURED ON 55cm OF THE CONCRETE COLUMNS LENGTH) FIG. (5) STRES-STRAIN RELATION (STRAIN MEASURED ON CONCRETE SURFACE!" In Protection of Concrete, 990. CRC Press, 1990. http://dx.doi.org/10.1201/9781482267037-318.

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Conference papers on the topic "55nm"

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Shopov, Stefan, Juergen Hasch, Pascal Chevalier, Andreia Cathelin, and Sorin P. Voinigescu. "A 240GHz Synthesizer in 55nm SiGe BiCMOS." In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2015. http://dx.doi.org/10.1109/csics.2015.7314468.

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Heng, Lau Kok, and Liew Chiun Ning. "FBGA 55nm SOC PLL failure analysis through OBIRCH." In 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2016. http://dx.doi.org/10.1109/ipfa.2016.7564270.

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Wang, Jinn-Shyan, Chun-Yuan Cheng, Je-Ching Liu, Yu-Chia Liu, and Yi-Ming Wang. "A 55nm 1GHz one-cycle-locking de-skewing circuit." In 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010. IEEE, 2010. http://dx.doi.org/10.1109/iscas.2010.5537580.

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Chen, Hualun, Botong Liu, and Lin Gu. "Data Retention Enhancement of Modern 55nm NOR Flash Memory." In 2022 China Semiconductor Technology International Conference (CSTIC). IEEE, 2022. http://dx.doi.org/10.1109/cstic55103.2022.9856863.

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Karalkar, Sagar P., Milova Paul, Xiao Mei Elaine Low, Kyong Jin Hwang, and Robert Gauthier. "HV ESD Device Solution Evaluations in 55nm BCD Technology." In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2021. http://dx.doi.org/10.1109/ipfa53173.2021.9617387.

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Cho, Byung-ug, Sung-woo Ko, Jae-seung Choi, Cheol-Kyun Kim, Hyun-jo Yang, DongGyu Yim, David Kim, et al. "Evaluation of inverse lithography technology for 55nm-node memory device." In SPIE Advanced Lithography. SPIE, 2008. http://dx.doi.org/10.1117/12.772515.

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Wehbi, Mohammed, Marc Margalef-Rovira, Cedric Durand, Sylvie Lepilliet, Ariana L. C. Serrano, and Philippe Ferrari. "Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm." In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022. IEEE, 2022. http://dx.doi.org/10.1109/ims37962.2022.9865564.

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Rebello, Alwyn, Naveen Prasath Vellingiri, Kyong Jin Hwang, and Robert Gauthier. "Systematic Study of Grounded N-Well Latchup in 55nm Technology." In 2021 43rd Annual EOS/ESD Symposium (EOS/ESD). IEEE, 2021. http://dx.doi.org/10.23919/eos/esd52038.2021.9574754.

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Hori, M., K. Fujita, M. Yasuda, K. Ookoshi, M. Tsutsumi, H. Ogawa, M. Takahashi, and T. Ema. "Embedded FLOTOX flash on ultra-low power 55nm logic DDC platform." In 2013 IEEE International Electron Devices Meeting (IEDM). IEEE, 2013. http://dx.doi.org/10.1109/iedm.2013.6724596.

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Benedini, Federica, Luca Sant, Richard Gaggl, and Andrea Baschirotto. "A 55nm Low-Noise Super-Source-Follower Preamplifier for MEMS Microphones." In 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME). IEEE, 2022. http://dx.doi.org/10.1109/prime55000.2022.9816750.

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Reports on the topic "55nm"

1

McCurdy, M. W., S. J. A. Day, R. J. McNeil, and S. J. Pehrsson. Regional lake sediment and water geochemical data, Baker Lake area, Nunavut (NTS 55M and 65P). Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2012. http://dx.doi.org/10.4095/289584.

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Praeg, D. B., and C. T. Schafer. Seabed Features of the Labrador Slope and Rise near 55N Revealed By Seamarc I Sidescan Sonar Imagery. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 1990. http://dx.doi.org/10.4095/128174.

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