Relevant bibliographies by topics / 4H-SiC

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic '4H-SiC'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "4H-SiC"

1

Shilpa, A., S. Singh, and N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors." Journal of Instrumentation 17, no. 11 (2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.

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Abstract Advancement in the growth of 4H-SiC with low micropipe densities (∼ 0.11 cm-2) in achieving high pure epitaxial layers, enabled the development of high-resolution 4H-SiC alpha particle Schottky radiation detectors for harsh environments. In particular, the study considers two types of 4H-SiC radiation detectors having Ni and Ti as Schottky contacts. They are fabricated by depositing Ni and Ti on 25 μm thick n-type 4H-SiC by epitaxially growing on 350 μm thick conducting SiC substrates. Electrical characterization and alpha spectral measurements performed on Ni/4H-SiC and Ti/4H-SiC SBD
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Liu, Xiaoshuang, Yazhe Wang, Xi Zhang, et al. "Crack healing behavior of 4H-SiC: Effect of dopants." Journal of Applied Physics 133, no. 14 (2023): 145704. http://dx.doi.org/10.1063/5.0140922.

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We investigate the crack-healing mechanism of 4H silicon carbide (4H-SiC) and reveal the effect of dopants on the crack-healing behavior of 4H-SiC. Vickers indentation tests and thermal annealing are utilized to generate cracks and heal cracks in 4H-SiC, respectively. High-temperature thermal annealing in the air atmosphere is found to be capable of effectively healing indentation-induced cracks and releasing indentation-induced stress in undoped 4H-SiC by the formation and viscous flow of glass phase SiO2. Nitrogen (N) doping is found to assist the atomic diffusion of 4H-SiC. The crack healin
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Yoneda, S., Tomoaki Furusho, H. Takagi, S. Ohta, and Shigehiro Nishino. "Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique." Materials Science Forum 483-485 (May 2005): 129–32. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.129.

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For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were sam
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Yang, Guang, Hao Luo, Jiajun Li, et al. "Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits." Journal of Semiconductors 43, no. 12 (2022): 122801. http://dx.doi.org/10.1088/1674-4926/43/12/122801.

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Abstract Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers. In this work, we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) in 4H-SiC. In n-type 4H-SiC, the inclination angles of the etch pits of TSDs, TEDs and BPDs in molten-alkali etched 4H-SiC are in the r
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Furusho, Tomoaki, Ryota Kobayashi, Taro Nishiguchi, et al. "Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds." Materials Science Forum 527-529 (October 2006): 35–38. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.35.

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Growth of 4H-SiC bulk crystals on 4H-SiC {03-38} seeds was done. 4H-SiC {03-38} is obtained by inclining the c-plane toward <01-10> at a 54.7 degrees angle. Growth on the 4H-SiC {03-38} seed has the potential to achieve high quality crystals without micropipes and stacking faults. Micropipe-free c-plane 4H-SiC wafers were achieved by growth on the 4H-SiC {03-38} seed. A transmission X-ray topograph image of the micropipe free c-plane wafer revealed that there are no macroscopic defects with displacements.
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Alexander, Kazuaki Seki, Shigeta Kozawa, Yuji Yamamoto, Toru Ujihara, and Yoshikazu Takeda. "Polytype Stability of 4H-SiC Seed Crystal on Solution Growth." Materials Science Forum 679-680 (March 2011): 24–27. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.24.

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We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.
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Kojima, Kazutoshi, Akira Nakajima, Hisashi Yamada, and Shinsuke Harada. "(Invited) Improvement of Surface Morphology of Vicinal Off Angled 4H-SiC Epitaxial Wafer for GaN/SiC Hybrid Devices." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2525. https://doi.org/10.1149/ma2024-02362525mtgabs.

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Wide gap semiconductor materials like SiC, GaN, and Ga2O3 are well-known as one of key technologies for realizing carbon neutrality. Indeed, SiC devices are used in many applications including electric vehicles, train systems, and consumer products. AlGaN/GaN HEMT devices also used in low voltage power source like AC adopters and 5G telecommunication systems. However, both devices have still improved issues. For SiC devices, the performance of MOS interface at the gate structure is still a big issue. On the other hand, GaN has superior performance of MOS interface and HEMT structure on the gat
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Naik, Harsh, and T. Paul Chow. "Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs." Materials Science Forum 679-680 (March 2011): 678–81. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.678.

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The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.
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Moon, Jeong Hyun, Da Il Eom, Sang Yong No, et al. "Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O." Materials Science Forum 527-529 (October 2006): 1083–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1083.

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The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime wa
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Yang, Xiao Li, Ya Ni Pan, Chao Gao, et al. "Development of High Quality 8 Inch 4H-SiC Substrates." Solid State Phenomena 344 (June 6, 2023): 41–46. http://dx.doi.org/10.4028/p-x44871.

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8 inch 4H-silicon carbide (SiC) development faces challenges first from obtaining high-quality 8 inch SiC seed substrate, then reducing grown-in crystal residual stress and defects in the following crystal growth process. Here we report the diameter expansion process from 6 inch 4H-SiC seed substrate to 8 inch 4H-SiC crystal. Based on simulation and experimental results, it is deduced that an optimized radial temperature gradient (RTG) zone in the range of 0.10-0.12 °C/mm is essential for high-quality and efficient SiC crystal diameter expansion. According to the RTG calculation, diameter expa
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Dissertations / Theses on the topic "4H-SiC"

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Florentín, Matthieu. "Irradiation impact on optimized 4H-SiC MOSFETs." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/395187.

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Silicon (Si) power device’ technologies have reached a high maturity level, but current limitations on mechanic, temperature operation and electric performances require to investigate other semiconductor materials that can potentially compete with and overcome those border issues. This is the case of Silicon Carbide (SiC) and Gallium Nitride (GaN) which are becoming serious competitors to the Si due to their superior physical properties. Concerning SiC, the 4Hpolytype seems to be the best suitable candidate for high power MOSFETs according to its band gap, electric field strength, electron bu
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Robert, Teddy. "Spectroscopie des fautes d'empilement dans 4H-SiC." Montpellier 2, 2009. http://www.theses.fr/2009MON20166.

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Li, Mingyu Williams John R. "Ohmic contacts to implanted (0001) 4H-SiC." Auburn, Ala., 2009. http://hdl.handle.net/10415/1960.

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Haasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices." Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.

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The research findings presented in this thesis have provided several key contributions towards a better understanding of the SiC–SiO2 interface in SiC MOS structures. The electrically active defects directly responsible for degrading the channel-carrier mobility in 4H–SiC MOSFETs have been identified and a novel technique to detect these defects in 4H–SiC MOS capacitors has been proposed and experimentally demonstrated. With a better understanding of defects at the SiC–SiO2 interface two alternative gate oxide growth processes have been proposed to overcome the practical limitations associated
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Horita, Masahiro. "Isopolytypic Growth of Nonpolar 4H-AlN on 4H-SiC and Its Device Applications." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/81830.

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Sejil, Selsabil. "Optimisation de l'épitaxie VLS du semiconducteur 4H-SiC : Réalisation de dopages localisés dans 4H-SiC par épitaxie VLS et application aux composants de puissance SiC." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1170/document.

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L'objectif du projet VELSIC a été de démontrer la faisabilité de jonctions p+/n- profondes dans le semiconducteur 4H-SiC, de haute qualité électrique, comprenant une zone p++ réalisée par un procédé original d'épitaxie localisée à basse température (1100 – 1200°C), en configuration VLS (Vapeur - Liquide - Solide). Cette technique innovante de dopage par épitaxie utilise le substrat de SiC mono cristallin comme un germe de croissance sur lequel un empilement enterré de Al - Si est porté à fusion pour constituer un bain liquide, lequel est alimenté en carbone par la phase gazeuse. Cette méthode
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Usman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.

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Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously p
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Zeng, Yutong. "Tailored Al2O3/4H-SiC interface using ion implantation." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-90233.

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The effects of ion implantation of Al2O3interface to 4H-SiC epitaxial n- and p-type layers are presented. Different fluencies of carbon and nitrogen ions are used, as well as different annealing processes, with the aim to study the effects of implanted ions at the Al2O3/SiC interface. Capacitance-Voltage (C-V) behavior for fabricated MOS capacitors is studied before and after implantation to determine the effect of the implantation. Terman‟s method was employed to extract the density of interface traps (Dit) present at the Al2O3/SiC interface. Effective oxide charges density (Neff), present in
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Karalas, Charilaos-Kimonas. "Process optimization for the 4H-SiC/SiO2 interface." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-174842.

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This thesis aims to optimize the process for the 4H-SiC/SiO2 interface formations. The experiments are made on metal-oxide-semiconductor (MOS) structures, where the semiconductor is an n-type epitaxially grown 4H-SiC thin film. The oxide is fabricated either with thermal oxidation, or by using plasma-enhanced chemical vapour deposition (PeCVD), utilising two different tools, Precision 5000 Mark II (P5000) and Plasmalab 80Plus system (Pekka). The deposition temperature is varied for the thermally grown oxide, while power, pressure and gas ratio of N2O/SiH4 is investigated for the PeCVD method.
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Suvanam, Sethu Saveda. "Radiation Hardness of 4H-SiC Devices and Circuits." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199907.

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Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. In this thesis, radiation effects of 4H-SiC bipolar devices, circuits and dielectrics for SiC are investigated under various radiation types. We have demonstrated for the first time the radiation hardness of 4H-SiC logic circuits exposed to extremely high doses
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Books on the topic "4H-SiC"

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Chemical Mechanical Polishing Optimization for 4H-SiC. Storming Media, 2000.

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Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- and 4H-SiC. Storming Media, 1999.

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National Aeronautics and Space Administration (NASA) Staff. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (Less Than 250 V) 4h-Sic P(+)N Junction Diodes. Part 1; DC Properties. Independently Published, 2018.

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Book chapters on the topic "4H-SiC"

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Gudjónsson, G., Fredrik Allerstam, Per Åke Nilsson, et al. "High Frequency 4H-SiC MOSFETs." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.795.

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Kalinina, Evgenia, Nikita B. Strokan, Alexandr M. Ivanov, et al. "4H-SiC High Temperature Spectrometers." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.941.

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Starke, Ulrich, W. Y. Lee, C. Coletti, S. E. Saddow, Robert P. Devaty, and W. J. Choyke. "SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.677.

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Sveinbjörnsson, Einar O., G. Gudjónsson, Fredrik Allerstam, et al. "High Channel Mobility 4H-SiC MOSFETs." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.961.

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Holmestad, R., JP Morniroli, JM Zuo, JCH Spence, and A. Avilov. "Quantitative CBED studies of SiC 4H." In Electron Microscopy and Analysis 1997. CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-35.

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Shishkin, Y., Yue Ke, Fei Yan, Robert P. Devaty, W. J. Choyke, and S. E. Saddow. "CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.255.

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Clouter, M. J., Yue Ke, Robert P. Devaty, W. J. Choyke, Y. Shishkin, and S. E. Saddow. "Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.415.

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Noborio, Masato, Jun Suda, Svetlana Beljakowa, Michael Krieger, and Tsunenobu Kimoto. "4H-SiC MISFETs with Nitrogen-Containing Insulators." In Silicon Carbide. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch10.

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Gudjónsson, G., Fredrik Allerstam, H. Ö. Ólafsson, et al. "High Power-Density 4H-SiC RF MOSFETs." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1277.

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Chandrashekhar, M. V. S., Christopher I. Thomas, Hui Li, Michael G. Spencer, and Amit Lal. "Demonstration of a 4H SiC Betavoltaic Cell." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1351.

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Conference papers on the topic "4H-SiC"

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Liu, Hongchao. "4H-SiC Semiconductor for EV and Beyond." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040449.

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Shi, Xiaodong, Yaoqin Lu, Sihao Wang, et al. "Type-II second-order nonlinear processes in silicon carbide nanophotonic waveguides." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm4n.3.

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Silicon carbide (SiC) is a promising material for integrated nonlinear and quantum photonics. We experimentally demonstrate type-II phase-matched second-harmonic generation and sum-frequency generation in 4H-SiC-on-insulator (SiCOI) nanophotonic waveguides.
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Shen, Sihao, Cailin Wang, Zhiwei Guo, and Wuhua Yang. "Characteristic Analysis of 200V 4H-SiC RESURF LDMOS." In 2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET). IEEE, 2024. https://doi.org/10.1109/isset62871.2024.10779831.

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Burin, Jürgen, Christopher Hahn, Philipp Gaggl, Andreas Gsponer, Simon Waid, and Thomas Bergauer. "TCAD Simulations of Radiation Damage in 4H-SiC." In 2024 Austrochip Workshop on Microelectronics (Austrochip). IEEE, 2024. http://dx.doi.org/10.1109/austrochip62761.2024.10716221.

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Liu, Bolin, Zaixing Wang, Jiachi Jiang, Linchang Wang, Bingqi Wang, and Yi Cai. "Performance Optimization of 4H-SiC MBL MPS Diode." In 2024 6th International Conference on Electronics and Communication, Network and Computer Technology (ECNCT). IEEE, 2024. http://dx.doi.org/10.1109/ecnct63103.2024.10704450.

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Khan, Md Asif, Pydi Ganga Bahubalindruni, Alexander May, Chiara Rossi, and Mathias Rommel. "Temperature Sensing Readout Circuits with 4H-SiC Technology." In 2024 IEEE International Symposium on Smart Electronic Systems (iSES). IEEE, 2024. https://doi.org/10.1109/ises63344.2024.00023.

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Wright, N. G. "4H-SiC power TCAD." In IEE Colloquium on New Developments in Power Semiconductor Devices. IEE, 1996. http://dx.doi.org/10.1049/ic:19960863.

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O'Neill, A., F. Arith, J. Urresti, K. Vasilevskiy, N. Wright, and S. Olsen. "High Mobility 4H-SiC MOSFET." In 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2018. http://dx.doi.org/10.1109/icsict.2018.8564911.

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Chen, G., Z. Y. Li, S. Bai, and P. Han. "Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792156.

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Liu, Xingfang, Jinmin Li, Guosheng Sun, et al. "Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306554.

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Reports on the topic "4H-SiC"

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Wu, Jian, J. Hu, J. H. Zhao, X. Wang, X. Li, and T. Burke. High Mobility 4H-SiC Trenched Gate MOSFETs. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada507271.

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Baliga, Jayant, and Pronita Mehrotra. 4H SiC Lateral Single Zone RESURF Diodes. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada358231.

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Zhang, Jiahui, Petre Alexandrov, Jian H. Zhao, and Terry Burke. 1677V, 5.7 mohm.cm2 4H-SiC Bipolar Junction Transistors. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada477420.

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Neudeck, Philip G., and Christian Fazi. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada359099.

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Katulka, Gary L. Evaluation of Electrical Resistivity Characteristics of Metalized 4H-SiC for Application to Electric Guns. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada362521.

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Mitra, Souvick, Mulpuri V. Rao, N. Papanicolaou, K. A. Jones, and M. Derenge. Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada424908.

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Swab, Jeffrey J., James W. McCauley, Brady Butler, et al. Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport. Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada600386.

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