Journal articles on the topic '40~nm'
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Durkan, C., and I. V. Shvets. "40 nm resolution in reflection-mode SNOM with λ = 685 nm." Ultramicroscopy 61, no. 1-4 (December 1995): 227–31. http://dx.doi.org/10.1016/0304-3991(95)00114-x.
Full textPezeshki, B., M. Zelinski, H. Zhao, and V. Agrawal. "40-mW 650-nm distributed feedback lasers." IEEE Photonics Technology Letters 10, no. 1 (January 1998): 36–38. http://dx.doi.org/10.1109/68.651093.
Full textOno, M., M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai. "A 40 nm gate length n-MOSFET." IEEE Transactions on Electron Devices 42, no. 10 (1995): 1822–30. http://dx.doi.org/10.1109/16.464413.
Full textPark, Chaeeun, and Munkyo Seo. "A 140 GHz Low-Noise Amplifier in 40 nm CMOS." Journal of Korean Institute of Electromagnetic Engineering and Science 33, no. 4 (April 2022): 312–17. http://dx.doi.org/10.5515/kjkiees.2022.33.4.312.
Full textWandt, D., M. Laschek, K. Przyklenk, A. Tünnermann, and H. Welling. "External cavity laser diode with 40 nm continuous tuning range around 825 nm." Optics Communications 130, no. 1-3 (September 1996): 81–84. http://dx.doi.org/10.1016/0030-4018(96)00171-x.
Full textZaghib, Karim, Alain Mauger, Monika Kopec, Francois Gendron, and C. M. Julien. "Intrinsic Properties of 40 nm-sized LiFePO4 Particles." ECS Transactions 16, no. 42 (December 18, 2019): 31–41. http://dx.doi.org/10.1149/1.3112726.
Full textAppenzeller, J., R. Martel, Ph Avouris, J. Knoch, J. Scholvin, J. A. del Alamo, P. Rice, and P. Solomon. "Sub-40 nm SOI V-groove n-MOSFETs." IEEE Electron Device Letters 23, no. 2 (February 2002): 100–102. http://dx.doi.org/10.1109/55.981319.
Full textHomulle, Harald, Fabio Sebastiano, and Edoardo Charbon. "Deep-Cryogenic Voltage References in 40-nm CMOS." IEEE Solid-State Circuits Letters 1, no. 5 (May 2018): 110–13. http://dx.doi.org/10.1109/lssc.2018.2875821.
Full textHofmann, W., M. Müller, P. Wolf, A. Mutig, T. Gründl, G. Böhm, D. Bimberg, and M. C. Amann. "40 Gbit/s modulation of 1550 nm VCSEL." Electronics Letters 47, no. 4 (2011): 270. http://dx.doi.org/10.1049/el.2010.3631.
Full textTakeuchi, Issei, Yosuke Shimamura, Yuki Kakami, Tsunenori Kameda, Keitaro Hattori, Seiji Miura, Hiroyuki Shirai, et al. "Transdermal delivery of 40-nm silk fibroin nanoparticles." Colloids and Surfaces B: Biointerfaces 175 (March 2019): 564–68. http://dx.doi.org/10.1016/j.colsurfb.2018.12.012.
Full textDurán, Vicente, Peter A. Andrekson, and Víctor Torres-Company. "Electro-optic dual-comb interferometry over 40 nm bandwidth." Optics Letters 41, no. 18 (September 7, 2016): 4190. http://dx.doi.org/10.1364/ol.41.004190.
Full textGutierrez, Eric, Carlos Perez, Luis Hernandez, Fernando Cardes, Violeta Petrescu, Sergio Walter, and Ulrich Gaier. "A Pulse Frequency Modulation VCO-ADC in 40 nm." IEEE Transactions on Circuits and Systems II: Express Briefs 66, no. 1 (January 2019): 51–55. http://dx.doi.org/10.1109/tcsii.2018.2837757.
Full textLiu, Yibo, Luhong Mao, and Baoyong Chi. "185–220 GHz wideband amplifier in 40 nm CMOS." Electronics Letters 54, no. 13 (June 2018): 802–4. http://dx.doi.org/10.1049/el.2018.1135.
Full textZhao, Dixian, Shailesh Kulkarni, and Patrick Reynaert. "A 60-GHz Outphasing Transmitter in 40-nm CMOS." IEEE Journal of Solid-State Circuits 47, no. 12 (December 2012): 3172–83. http://dx.doi.org/10.1109/jssc.2012.2216692.
Full textAtef, Mohamed, Andreas Polzer, and Horst Zimmermann. "Avalanche Double Photodiode in 40-nm Standard CMOS Technology." IEEE Journal of Quantum Electronics 49, no. 3 (March 2013): 350–56. http://dx.doi.org/10.1109/jqe.2013.2246546.
Full textCong, Jia, Dong Yan, Jiling Tang, Weilian Guo, and Xurui Mao. "Integrated Color Photodetectors in 40-nm Standard CMOS Technology." IEEE Photonics Technology Letters 31, no. 24 (December 15, 2019): 1979–82. http://dx.doi.org/10.1109/lpt.2019.2952204.
Full textSuteewong, Teeraporn, Kai Ma, Jennifer E. Drews, Ulrike Werner-Zwanziger, Josef Zwanziger, Ulrich Wiesner, and Michelle S. Bradbury. "Highly fluorescent sub 40-nm aminated mesoporous silica nanoparticles." Journal of Sol-Gel Science and Technology 74, no. 1 (November 21, 2014): 32–38. http://dx.doi.org/10.1007/s10971-014-3567-2.
Full textKakami, Yuki, Issei Takeuchi, and Kimiko Makino. "Percutaneous immunization with 40-nm antigen-encapsulated elastic liposomes." Colloids and Surfaces A: Physicochemical and Engineering Aspects 566 (April 2019): 128–33. http://dx.doi.org/10.1016/j.colsurfa.2019.01.023.
Full textMansur, Dan. "A New 40-nm FPGA and ASIC Common Platform." IEEE Micro 29, no. 2 (March 2009): 46–53. http://dx.doi.org/10.1109/mm.2009.22.
Full textOchiai, Y., S. Manako, S. Samukawa, K. Takeuchi, and T. Yamamoto. "Accurate nano-EB lithography for 40-nm gate MOSFETs." Microelectronic Engineering 30, no. 1-4 (January 1996): 415–18. http://dx.doi.org/10.1016/0167-9317(95)00276-6.
Full textMartinez-Lopez, A. G., A. Cerdeira, J. C. Tinoco, J. Alvarado, W. Y. Padron, C. Mendoza, and J. P. Raskin. "RF modeling of 40-nm SOI triple-gate FinFET." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 28, no. 4 (October 16, 2014): 465–78. http://dx.doi.org/10.1002/jnm.2028.
Full textCoelho, M. F., M. A. Rivas, E. M. Nogueira, and T. P. Iglesias. "Permittivity of (40 nm and 80 nm) alumina nanofluids in ethylene glycol at different temperatures." Journal of Chemical Thermodynamics 158 (July 2021): 106423. http://dx.doi.org/10.1016/j.jct.2021.106423.
Full textUsami, Yoshihisa, Tetsuya Watanabe, Yoshinori Kanazawa, Kazuaki Taga, Hiroshi Kawai, and Kimio Ichikawa. "405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material." Applied Physics Express 2, no. 12 (November 27, 2009): 126502. http://dx.doi.org/10.1143/apex.2.126502.
Full textGoldstein, John C., Brian D. McVey, and C. James Elliott. "Conceptual designs of a 50 nm FEL oscillator and a 20–40 nm SASE amplifier." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 272, no. 1-2 (October 1988): 177–82. http://dx.doi.org/10.1016/0168-9002(88)90219-7.
Full textTang, Ming, Xiaolong Tian, Xiaona Lu, Songnian Fu, Perry Ping Shum, Zhenrong Zhang, Ming Liu, Yuan Cheng, and Jian Liu. "Single-frequency 1060 nm semiconductor-optical-amplifier-based fiber laser with 40 nm tuning range." Optics Letters 34, no. 14 (July 13, 2009): 2204. http://dx.doi.org/10.1364/ol.34.002204.
Full textKim, Jaegwan, Changjung Lee, and Munkyo Seo. "A 130-GHz Low-Area Power Amplifier in 40-nm CMOS." Journal of Korean Institute of Electromagnetic Engineering and Science 34, no. 4 (April 2023): 310–16. http://dx.doi.org/10.5515/kjkiees.2022.34.4.310.
Full textKim, Jaegwan, Changjung Lee, and Munkyo Seo. "A 130-GHz Low-Area Power Amplifier in 40-nm CMOS." Journal of Korean Institute of Electromagnetic Engineering and Science 34, no. 4 (April 2023): 310–16. http://dx.doi.org/10.5515/kjkiees.2023.34.4.310.
Full textShuangyi Yan, 延双毅, 张建国 Jianguo Zhang, and 赵卫 Wei Zhao. "40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range." Chinese Optics Letters 6, no. 9 (2008): 676–78. http://dx.doi.org/10.3788/col20080609.0676.
Full textTanaka, Hiroaki, Yasuyuki Miyamoto, Toshihiko Otake, Jiroo Yoshinaga, and Kazuhito Furuya. "Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs." Japanese Journal of Applied Physics 35, Part 2, No. 8A (August 1, 1996): L964—L967. http://dx.doi.org/10.1143/jjap.35.l964.
Full textZhao Junfa, 赵军发, 杨秀峰 Yang Xiufeng, 刘卓琳 Liu Zhuolin, 童峥嵘 Tong Zhengrong, 刘艳格 Liu Yange, and 赵启大 Zhao Qida. "Multiwavelength Brillouin/Erbium Fiber Source with 40 nm Tuning Range." Chinese Journal of Lasers 37, no. 10 (2010): 2482–86. http://dx.doi.org/10.3788/cjl20103710.2482.
Full textMelul, Franck, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Pierre Laine, Frederique Trenteseaux, Marc Mantelli, et al. "Morphology and reliability aspects of 40 nm eSTM™ architecture." Microelectronics Reliability 126 (November 2021): 114266. http://dx.doi.org/10.1016/j.microrel.2021.114266.
Full textSialm, G., C. Kromer, T. Morf, F. Ellinger, and H. Jäckel. "40 Gbit∕s limiting output buffer in 80 nm CMOS." Electronics Letters 41, no. 19 (2005): 1051. http://dx.doi.org/10.1049/el:20052172.
Full textLee, K. J., R. LaComb, B. Britton, M. Shokooh-Saremi, H. Silva, E. Donkor, Y. Ding, and R. Magnusson. "Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth." IEEE Photonics Technology Letters 20, no. 22 (November 2008): 1857–59. http://dx.doi.org/10.1109/lpt.2008.2004777.
Full textShin, Jinuk Luke, Dawei Huang, Bruce Petrick, Changku Hwang, Kenway W. Tam, Alan Smith, Ha Pham, et al. "A 40 nm 16-Core 128-Thread SPARC SoC Processor." IEEE Journal of Solid-State Circuits 46, no. 1 (January 2011): 131–44. http://dx.doi.org/10.1109/jssc.2010.2080491.
Full textKo, Chun-Lin, Chun-Hsing Li, Chien-Nan Kuo, Ming-Ching Kuo, and Da-Chiang Chang. "A 210-GHz Amplifier in 40-nm Digital CMOS Technology." IEEE Transactions on Microwave Theory and Techniques 61, no. 6 (June 2013): 2438–46. http://dx.doi.org/10.1109/tmtt.2013.2260767.
Full textAiello, Orazio, Paolo Crovetti, and Massimo Alioto. "Standard Cell-Based Ultra-Compact DACs in 40-nm CMOS." IEEE Access 7 (2019): 126479–88. http://dx.doi.org/10.1109/access.2019.2938737.
Full textMartín-González, M., A. L. Prieto, R. Gronsky, T. Sands, and A. M. Stacy. "High-Density 40 nm Diameter Sb-Rich Bi2xSbxTe3 Nanowire Arrays." Advanced Materials 15, no. 12 (June 17, 2003): 1003–6. http://dx.doi.org/10.1002/adma.200304781.
Full textZhang, Sheng, Ke Wei, Xiao-Hua Ma, Bin Hou, Guo-Guo Liu, Yi-chuan Zhang, Xin-Hua Wang, et al. "Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer." Applied Physics Letters 114, no. 1 (January 7, 2019): 013503. http://dx.doi.org/10.1063/1.5077050.
Full textWang, Weihuai, Hao Jin, Shurong Dong, Lei Zhong, and Yan Han. "Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process." Solid-State Electronics 116 (February 2016): 80–87. http://dx.doi.org/10.1016/j.sse.2015.11.033.
Full textYoneda, Shinichi, Satoru Ito, Yukio Hayakawa, Zhiqiang Wei, Shunsaku Muraoka, Ryutaro Yasuhara, Koichi Kawashima, Atsushi Himeno, and Takumi Mikawa. "Newly developed process integration technologies for highly reliable 40 nm ReRAM." Japanese Journal of Applied Physics 58, SB (February 22, 2019): SBBB06. http://dx.doi.org/10.7567/1347-4065/aafd8d.
Full textZhou Hongjun, 周洪军, 王冠军 Wang Guanjun, 郑津津 Zheng Jinjin, 霍同林 Hou Tonglin, and 邱克强 Qiu Keqiang. "Suppression of HigherOrder Harmonics by Different Filter in 5~40 nm." Acta Optica Sinica 30, no. 9 (2010): 2753–56. http://dx.doi.org/10.3788/aos20103009.2753.
Full textYoo, Seong Ho, Benjamin Y. H. Liu, James Sun, Natraj Narayanswami, and Gregory P. Thomes. "Particle Removal Efficiency Evaluation at 40 nm Using Haze Particle Standard." Solid State Phenomena 76-77 (January 2001): 259–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.259.
Full textKmon, P., R. Szczygieł, R. Kłeczek, D. Górni, G. Węgrzyn, A. Niedzielska, K. Sitko, and P. Drwal. "Spectrum1k — integrated circuit for medical imaging designed in CMOS 40 nm." Journal of Instrumentation 17, no. 03 (March 1, 2022): C03023. http://dx.doi.org/10.1088/1748-0221/17/03/c03023.
Full textXu, Lei-jun, Zhi-jian Xie, Xue Bai, Qin Li, Bai-kang Wang, and Peng-cheng Yin. "Design of THz Monolithic Source and Detector in 40-nm CMOS." Journal of Infrared, Millimeter, and Terahertz Waves 42, no. 9-10 (September 2021): 1040–60. http://dx.doi.org/10.1007/s10762-021-00787-6.
Full textMoons, Bert, and Marian Verhelst. "An Energy-Efficient Precision-Scalable ConvNet Processor in 40-nm CMOS." IEEE Journal of Solid-State Circuits 52, no. 4 (April 2017): 903–14. http://dx.doi.org/10.1109/jssc.2016.2636225.
Full textWang, X., F. Gao, K. Huang, Z. s. Zhang, Y. Shi, and Y. Xu. "Spectral Sensitivity Analysis of OCD Tool for Sub 40 Nm Process." ECS Transactions 60, no. 1 (February 27, 2014): 887–92. http://dx.doi.org/10.1149/06001.0887ecst.
Full textKalyuzhnyy, N. A., S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskiy, D. V. Rybalchenko, and M. Z. Shvarts. "InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency." Electronics Letters 53, no. 3 (February 2017): 173–75. http://dx.doi.org/10.1049/el.2016.4308.
Full textTan, Chee Hing, Shiyu Xie, and Jingjing Xie. "Low Noise Avalanche Photodiodes Incorporating a 40 nm AlAsSb Avalanche Region." IEEE Journal of Quantum Electronics 48, no. 1 (January 2012): 36–41. http://dx.doi.org/10.1109/jqe.2011.2176105.
Full textLiu, H. D., Y. P. Zhao, G. Ramanath, S. P. Murarka, and G. C. Wang. "Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films." Thin Solid Films 384, no. 1 (March 2001): 151–56. http://dx.doi.org/10.1016/s0040-6090(00)01818-6.
Full textMauricio, Joan, Francesc Moll, and Sergio Gomez. "Measurements of Process Variability in 40-nm Regular and Nonregular Layouts." IEEE Transactions on Electron Devices 61, no. 2 (February 2014): 365–71. http://dx.doi.org/10.1109/ted.2013.2294742.
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