Relevant bibliographies by topics / 28nm

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic '28nm'

Author: Grafiati
Published: 9 March 2023
Last updated: 31 July 2025

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Journal articles on the topic "28nm"

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Kalia, Kartik, Khyati Nanda, Arushi Aggarwal, Akshita Goel, and Shivani Malhotra. "Transistor Resizing Based Low Power Thermal Aware Adder Design on FPGA." Advanced Materials Research 1098 (April 2015): 37–43. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.37.

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In this work, we are going to search the most thermal and energy efficient technology among 90nm, 65nm, 45nm, 40nm and 38nm technology based FPGA, and also searching the most thermal and energy efficient airflow, and heat sink profile. We are also doing thermal analysis for 273.15K-343.15K temperature. we are getting 31.67%, 75.71%, reduction in leakage power for 250LFM and 58.53%, 75.71% reduction in leakage power for 500LFM when we scale down ambient temperature from 343.15K to 283.15K for 65nm, 28nm technology based FPGA. There is 84.54%, 85.65%, reduction in junction temperature for 250LFM
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Chen, Fu Ping, Hai Bo Lei, Xiao Yan Zhang, et al. "High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System." Solid State Phenomena 314 (February 2021): 133–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.133.

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Batch SPM systems do not meet the current clean specification/requirements below 28nm. Single wafer SPM systems use a high volume of chemistry which runs to drain, while meeting the cleaning specifications below 28nm. The work in this paper describe the use of a batch SPM system and a single wafer clean in an integrated system, Ultra-C Tahoe which results in meeting the technical specification and using less that 80% of the SPM chemistry used in single wafer systems. The data collected shows this new system meet the specifications, whilst saving more than 80%of SPM chemistry.
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Zhang, Beichao, Bin Zhang, Haibo Xiao, et al. "Thin Film Challenges in 28nm Technology Node." ECS Transactions 44, no. 1 (2019): 391–94. http://dx.doi.org/10.1149/1.3694344.

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Aguiar, V. A. P., N. H. Medina, N. Added, et al. "Thermal neutron induced upsets in 28nm SRAM." Journal of Physics: Conference Series 1291 (July 2019): 012025. http://dx.doi.org/10.1088/1742-6596/1291/1/012025.

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Rochefeuille, E., F. Alicalapa, A. Douyère, and T. P. Vuong. "FDSOI 28nm performances study for RF energy scavenging." IOP Conference Series: Materials Science and Engineering 321 (March 2018): 012009. http://dx.doi.org/10.1088/1757-899x/321/1/012009.

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., Anshu Gaur. "HDL IMPLEMENTATION OF AMBA AHB ON 28NM FPGA." International Journal of Research in Engineering and Technology 06, no. 06 (2017): 148–53. http://dx.doi.org/10.15623/ijret.2017.0606024.

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Gupta, Arpit, Aarushi Sapra, Alisha Nagpal, and Sanchit Sharma. "Energy Efficient Traffic Light Controller Design on 28nm FGPA." International Journal of Smart Home 9, no. 10 (2015): 133–44. http://dx.doi.org/10.14257/ijsh.2015.9.10.15.

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Chandra Verma, Puneet, Pragya Agarwal, Apurva Omer, Bhaskar Gururani, and Sanchit Verma. "Designing Green ECG Machine Based on Artix7 28nm FPGA." Gyancity Journal of Engineering and Technology 3, no. 1 (2017): 38–44. http://dx.doi.org/10.21058/gjet.2017.31006.

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Chang, Woong-Joo, Chae-Jun Lee, Joon-Hyung Kim, and Tae-Hwan Jang. "Cryogenic CMOS LNA in 28nm CMOS Process for Quantum Computing." Journal of the Institute of Electronics and Information Engineers 61, no. 10 (2024): 25–31. https://doi.org/10.5573/ieie.2024.61.10.25.

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Phu Phu, Tran Nguyen, Dang Phuong Gia Han, Nguyen Cong Luong, and Nguyen Van Cuong. "Design A Synchronous Single-Port Sram 1024x32xMUX4 Using 28NM Technology." International Journal of Computing and Digital Systems 10, no. 1 (2021): 103–9. http://dx.doi.org/10.12785/ijcds/100110.

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Dissertations / Theses on the topic "28nm"

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Biswas, Avishek Ph D. Massachusetts Institute of Technology. "Energy-efficient SRAM design in 28nm FDSOI Technology." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91095.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>48<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 75-81).<br>As CMOS scaling continues to sub-32nm regime, the effects of device variations become more prominent. This is very critical in SRAMs, which use very small transistor dimensions to achieve high memory density. The conventional 6T SRAM bit-cell, which provides the smallest cell-area, fails to operate at lower supply voltages (Vdd). This is due to the significant degradation of
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PIPINO, ALESSANDRA. "Design of Analog Circuits in 28nm CMOS Technology for Physics Applications." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2017. http://hdl.handle.net/10281/158126.

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Il trend esponenziale delle tecnologie CMOS previsto dalla legge di Moore è stato ampiamento dimostrato nel corso degli ultimi tre decenni. Si è osservato uno scaling costante, caratterizzato da dispositivi sempre più piccoli, per soddisfare le esigenze delle applicazioni digitali in termini di velocità, complessità, densità circuitale e basso consumo di potenza. Ogni nodo tecnologico è rappresentato dalla minima lunghezza ottenibile, che corrisponde alla lunghezza del canale del più piccolo transistor che si può integrare. Con l'arrivo delle tecnologie al di sotto dei 100nm, le performance d
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Lorrain, Vincent. "Etude et conception de circuits innovants exploitant les caractéristiques des nouvelles technologies mémoires résistives." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS182/document.

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Dans cette thèse, nous étudions les approches calculatoires dédiées des réseaux de neurones profonds et plus particulièrement des réseaux de neurones convolutionnels (CNN). En effet, l'efficacité des réseaux de neurones convolutionnels en font des structures calculatoires intéressantes dans de nombreuses applications. Nous étudions les différentes possibilités d'implémentation de ce type de réseaux pour en déduire leur complexité calculatoire. Nous montrons que la complexité calculatoire de ce type de structure peut rapidement devenir incompatible avec les ressources de l'embarqué. Pour résoud
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Torres, Florent. "Power amplifier design for 5G applications in 28nm FD-SOI technology." Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0064/document.

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Le futur réseau mobile 5G est prévu pour être déployé à partir de 2020, dans un contexte d’évolution exponentielle du marché de la téléphonie mobile et du volume de données échangées. La 5G servira de levier à des applications révolutionnaires qui permettront l’émergence du monde connecté. Dans ce but, plusieurs spécifications pour le réseau sont attendues même si aucun standard n’est encore défini et notamment une faible latence, une consommation d’énergie réduite et un haut débit de données. Les bandes de fréquences traditionnellement utilisées dans les réseaux mobiles ne permettront pas d’a
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Arfaoui, Wafa. "Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal." Thesis, Aix-Marseille, 2015. http://www.theses.fr/2015AIXM4335.

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Au sein de la course industrielle à la miniaturisation et avec l’augmentation des exigences technologiques visant à obtenir plus de performances sur moins de surface, la fiabilité des transistors MOSFET est devenue un sujet d’étude de plus en plus complexe. Afin de maintenir un rythme de miniaturisation continu, des nouvelles architectures de transistors MOS en été introduite, les technologies conventionnelles sont remplacées par des technologies innovantes qui permettent d'améliorer l'intégrité électrostatique telle que la technologie FDSOI avec des diélectriques à haute constante et grille m
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Bayat, Shahin. "Experiments and simulations on negative/positive bias temperature instability in 28nm CMOS devices." Thesis, University of British Columbia, 2015. http://hdl.handle.net/2429/55104.

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CMOS transistors come with a scaling potential, which brings along challenges such as process variation and NBTI/PBTI (Negative/Positive Bias Temperature Instability). My objectives during this project are to investigate effects of aging on CMOS devices as well as to show experimental results in order to model the effect of N/PBTI specifically targeting the 28nm technology node. The direct effect of transistor aging is a degradation of device threshold voltage, which can lead to performance degradation or malfunctions. Places such as server farms, data centers, and outer space-crafts, where de
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Fonseca, Alexandre. "Conception et réalisation de circuits de génération de fréquence en technologie FDSOI 28nm." Thesis, Nice, 2015. http://www.theses.fr/2015NICE4100/document.

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Le déploiement à grande échelle de l’internet des objets nécessite le développement de systèmes de radiocommunication plus économes en énergie, dont le circuit de génération de fréquences est connu pour être particulièrement énergivore. L’objectif de ce travail de thèse est donc d’une part de développer une synthèse de fréquences très faible consommation et d’autre part de démontrer les performances de la technologie FDSOI pour des applications analogiques et radiofréquences. Dans le premier chapitre sont présentées les spécifications du standard choisi -le BLE-, les spécificités de la technol
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Souvignet, Thomas. "Contribution to the design of switched-capacitor voltage regulators in 28nm FDSOI CMOS." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0043/document.

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Les appareils multimédias portables nécessitent toujours plus d'innovation pour satisfaire les besoins des utilisateurs. Les fabricants de système-sur-puces font donc face à une forte demande en capacité de calcul jusqu'à lors réservée aux ordinateurs de bureau. Ce transfert de performance se répercute inévitablement sur la consommation de ces appareils alors que dans le même temps la capacité des batteries n'est pas en mesure de répondre à cet accroissement. De nombreux compléments matériels et logiciels sont mis en places afin d'économiser l'énergie au maximum sans toutefois dégrader les per
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Sivadasan, Ajith. "Conception et simulation des circuits numériques en 28nm FDSOI pour la haute fiabilité." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT118.

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La mise à l'échelle de la technologie CMOS classique augmente les performances des circuits numériques grâce à la possibilité d'incorporation de composants de circuit supplémentaires dans la même zone de silicium. La technologie FDSOI 28nm de ST Microélectroniques est une stratégie d'échelle innovante qui maintient une structure de transistor planaire et donc une meilleure performance sans augmentation des coûts de fabrication de puces pour les applications basse tension. Il est important de s'assurer que l'augmentation des fonctionnalités et des performances ne se fasse pas au détriment de la
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Rahhal, Lama. "Analyse et modélisation des phénomènes de mismatch des transistors MOSFET avancées." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT061/document.

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Afin de réaliser correctement leur fonction, certains blocs analogiques ou numériques comme les miroirs de courant ou les SRAM, nécessitent des paires de transistors MOS électriquement identiques. Cependant, les dispositifs sur silicium, même appariés, subissent des variations locales aléatoires ce qui fait varier leurs performances électriques. Ce phénomène est connu sous le nom désappariement. L'objectif de cette thèse est de comprendre les causes physiques de ce désappariement, de le quantifier et de proposer des solutions pour le réduire. Dans ce contexte, quatre thèmes principaux sont dév
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Books on the topic "28nm"

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Batalov, Vyacheslav. Loyal Alliance. Musketeers & Reiters: 28mm Paper Soldiers. Independently Published, 2019.

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Alexandrovich, Batalov, and Batalov Nicolaevich. Rebels. Highlanders 1680-1730: 28mm Paper Soldiers. Independently Published, 2019.

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Alexandrovich, Batalov, and Batalov Nicolaevich. Rebels. Pirates 1680-1730: 28mm Paper Soldiers. Independently Published, 2019.

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Alexandrovich, Batalov, and Batalov Nicolaevich. Golden Roses. Cavalry 1680-1730: 28mm Paper Soldiers. Independently Published, 2019.

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Batalov, Vyacheslav. Loyal Alliance. Cavalry 1600-1650: 28mm Paper Soldiers. Independently Published, 2019.

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Batalov, Vyacheslav. Loyal Alliance. Royalists 1640-1660: 28mm Paper Soldiers. Independently Published, 2019.

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Batalov, Vyacheslav. Protest League. Cavalry 1600-1650: 28mm Paper Soldiers. Independently Published, 2019.

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Alexandrovich, Batalov, and Batalov Nicolaevich. Flaming Spear. Seratkulu 1680-1730: 28mm Paper Soldiers. Independently Published, 2019.

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Batalov, Vyacheslav. Protest League. Ironsides 1640-1660: 28mm Paper Soldiers. Independently Published, 2019.

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Alexandrovich, Batalov, and Batalov Nicolaevich. Flaming Spear. Kapykulu 1680-1730: 28mm Paper Soldiers. Independently Published, 2019.

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Book chapters on the topic "28nm"

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Nemoianu, Virgil. "2. Romantic Irony and Biedermeier Tragicomedy." In Comparative History of Literatures in European Languages. John Benjamins Publishing Company, 1993. http://dx.doi.org/10.1075/chlel.ix.28nem.

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Metcalfe, N., T. Shanks, N. Roche, and R. Fong. "Galaxy Number-Counts to B = 28m." In Astronomy from Wide-Field Imaging. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1146-1_137.

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Yoshikawa, Takamasa, Tadashi Inaba, Kenta Ida, and Shinya Mizutani. "Experimental Study of Critical Stresses of Fe-28Mn-6Si-5Cr SMA Under Various Temperature Conditions." In Advances in Shape Memory Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-53306-3_17.

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Meloni, Chantal. "Modes of Responsibility (Article 28N), Individual Criminal Responsibility (Article 46B) and Corporate Criminal Liability (Article 46C)." In International Criminal Justice Series. T.M.C. Asser Press, 2016. http://dx.doi.org/10.1007/978-94-6265-150-0_9.

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Ambos, Kai. "Genocide (Article 28B), Crimes Against Humanity (Article 28C), War Crimes (Article 28D) and the Crime of Aggression (Article 28M)." In International Criminal Justice Series. T.M.C. Asser Press, 2016. http://dx.doi.org/10.1007/978-94-6265-150-0_3.

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Morgenstern, Frank, and Stephan Huck. "Der Passionspunkt »Erinnern und Mahnen über die Grenzen hinweg« gefeiert auf dem Vorplatz des Marinemuseums in Wilhelmshaven in der Karwoche 2016 zum Thema: 28cm." In Ausgezeichnete Gottesdienste. Vandenhoeck & Ruprecht, 2017. http://dx.doi.org/10.13109/9783788732110.143.

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Smirnov, O. M., M. M. Voron, A. Tymoshenko, A. Semenko, Yu Skorobagatko, and S. L. Schwab. "Effect of heat treatment on the structure of the Fe-28Mn-12Al-0.9Si-1.35C alloy, additionally doped by Ni 3.3, Cr 1, V 0.15 (wt. %)." In Welding and Related Technologies. CRC Press, 2025. https://doi.org/10.1201/9781003518518-35.

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Fatima, Afroz, and Abhijit Pethe. "An RRAM-Based Neuromorphic Accelerator for Speech-Based Emotion Recognition." In Advances in Systems Analysis, Software Engineering, and High Performance Computing. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-6596-7.ch003.

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A neuromorphic accelerator for a deep net having RRAM based processing elements has been implemented for emotion detection based on dialect. The proposed accelerator has been trained on the RAVDESS dataset in order to classify different emotion types. The RRAM based swish activation function has been employed to build the neuromorphic accelerator as it consumes less power (476μW), has lower operating voltage (1.23V), and has better performance and output characteristics. The proposed neuromorphic accelerator has been implemented using 1T-1RRAM Processing Elements on ST Microelectronics 28nm FD
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XU, PANPAN, LAN PENG, JIAN LIU, WENWEN YIN, and SHUAI ZHOU. "Nickel (28Ni)." In Handbook of Synthetic Methodologies and Protocols of Nanomaterials. World Scientific, 2019. http://dx.doi.org/10.1142/9789813277809_0019.

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Venkatachalam, Gnanalakshmi, M. Heman, and S. Sumesh. "Circular Fractal Array Antenna for C and S-Band Applications." In Advances in Wireless Technologies and Telecommunication. IGI Global, 2025. https://doi.org/10.4018/979-8-3693-8799-3.ch010.

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In this article, a circular fractal array antenna is proposed for C-band and S-band applications. The antenna uses circular fractal geometry to achieve high gain across the S and C bands frequency spectrum. The antenna is fabricated using an FR-4 substrate and tested in anechoic chamber. The antenna design holds potential for multi-functional wireless systems and S and C band applications. The measurement results reveal that the designed antenna has two resonant frequencies at 3.5 GHz and 5.8 GHz and gain of around 3.1dB is noted. The size of proposed antenna is 28mm×28mm×1.6mm.
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Conference papers on the topic "28nm"

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Gupta, Mihir, Lander Verstraete, Joern-Holger Franke, et al. "EUV dose reduction for pitch 28nm line-space." In International Conference on Extreme Ultraviolet Lithography 2024, edited by Joern-Holger Franke, Kurt G. Ronse, Paolo A. Gargini, Patrick P. Naulleau, and Toshiro Itani. SPIE, 2024. http://dx.doi.org/10.1117/12.3034646.

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Crafton, Brian, Samuel D. Spetalnick, Muya Chang, and Arijit Raychowdhury. "A 28nm Approximate / Binary 6T CAM for Sequence Alignment." In 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2024. http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631341.

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Liu, Mingjie, Zhujuan Wan, Biao Deng, Changwei Wang, Fan Yu, and Liguo Sun. "A 2.4GHz Integer-N Frequency Synthesizer in 28nm CMOS." In 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2024. http://dx.doi.org/10.1109/icmmt61774.2024.10672154.

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Taylor, Brad, and Ralph Wittig. "28nm generation programmable families." In 2010 IEEE Hot Chips 22 Symposium (HCS). IEEE, 2010. http://dx.doi.org/10.1109/hotchips.2010.7480077.

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Parpillon, Benjamin, Anthony Badea, Chinar Syal, et al. "Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm." In Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm. US DOE, 2024. http://dx.doi.org/10.2172/2477314.

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Parrassin, Thierry, Guillaume Celi, Sylvain Dudit, et al. "Laser Voltage Imaging and Its Derivatives—Efficient Techniques to Address Defect on 28 nm Technology." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0306.

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Abstract The Laser Voltage Imaging (LVI) technique, introduced in 2007 [1][2], has been demonstrated as a successful defect localization technique to address problems on advanced technologies. In this paper, several 28nm case studies are described on which the LVI technique and its derivatives provide a real added value to the defect localization part of the Failure Analysis flow. We will show that LVI images can be used as a great reference to improve the CAD alignment overlay accuracy which is critical for advanced technology debug. Then, we will introduce several case studies on 28nm techno
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Ning, Liew Chiun, Lau Kok Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, and Loo Huey Wen. "FBGA 28nm Scan Chain Failure Analysis." In 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2018. http://dx.doi.org/10.1109/ipfa.2018.8452562.

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Kheirallah, Rida, Nadine Azemard, and Gilles Ducharme. "Energy study for 28nm FDSOI technology." In 2015 International Workshop on CMOS Variability (VARI). IEEE, 2015. http://dx.doi.org/10.1109/vari.2015.7456558.

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Sahashchik, Ulyana, and Evgeniya Sokolova. "DEVELOPMENT OF A TOOL FOR GENERATING A SET OF CLIPS FOR CONDUCTING SMO." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1656.silicon-2020/380-382.

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Celi, Guillaume, Sylvain Dudit, Thierry Parrassin, et al. "Laser Voltage Imaging: New Perspective Using Second Harmonic Detection on Submicron Technology." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0176.

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Abstract The Laser Voltage Imaging (LVI) technique [1], introduced in 2009, appears as a very promising approach for Failure Analysis application which allows mapping frequencies through the backside of integrated circuits. In this paper, we propose a new range of application based on the study of the LVI second harmonic for signal degradation analysis. After a theoretical study of the impact of signal degradation on the second harmonic, we will demonstrate the interest of this new approach on two case studies on ultimate technology (28nm). This technique is a new approach of failure analysis
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Reports on the topic "28nm"

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Sologub, Dmitry, Emil Babaev, and Batdal Batdalov. MI-28N OPTICAL DETECTION AND GUIDANCE SYSTEMS. Science and Innovation Center Publishing House, 2020. http://dx.doi.org/10.12731/detection_and_guidance_systems.

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Книга предназначена для студентов (курсантов), а также технического персонала обслуживающего данное оборудование для ознакомления и подготовки к эксплуатации оптических систем вертолета МИ-28Н, а также его анализа с подобными ему иностранными техниками.
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