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Journal articles on the topic '(111) Si'

Author: Grafiati
Published: 6 September 2023

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1

Pervan, P., K. Markert, and K. Wandelt. "Photoemission of Xe adsorbed on Si(111)7×7, Ag/Si(111), Au/Si(111) and O/Si(111) surfaces." Applied Surface Science 108, no. 3 (March 1997): 307–17. http://dx.doi.org/10.1016/s0169-4332(96)00684-8.

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2

Бессолов, В. Н., Е. В. Коненкова, T. А. Орлова, and С. Н. Родин. "Начальные стадии роста полуполярного AlN на наноструктурированной Si(100) подложке." Физика и техника полупроводников 55, no. 10 (2021): 908. http://dx.doi.org/10.21883/ftp.2021.10.51442.41.

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Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярных AlN(1011) и AlN(1012) слоев при эпитаксии из металлоорганических соединений на подложке Si(100), на поверхности которой сформирована V-образная наноструктура с размером элементов <100 нм (подложка-NP-Si(100)). Показано, что на начальной стадии эпитаксии на подложке-NP-Si(100) происходит формирование зародышевых кристаллов AlN, а затем в зависимости от кристаллографической ориентации V-стенок формируются кристаллы, ограненные плоскостями AlN(1011) на Si(111) или AlN(1012) на Si(111), разориентированном в направлении [110] на 7o. Ключевые слова: полуполярный нитрид алюминия, наноструктурированная подложка кремния.
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3

Stesmans, A. "The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfaces." Semiconductor Science and Technology 4, no. 12 (December 1, 1989): 1000–1011. http://dx.doi.org/10.1088/0268-1242/4/12/005.

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4

Michel, E. G., Th Pauly, V. Eteläniemi, and G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces." Surface Science 241, no. 1-2 (January 1991): 111–23. http://dx.doi.org/10.1016/0039-6028(91)90216-f.

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5

Michel, E. G., Th Pauly, V. Eteläniemi, and G. Materlik. "Adsorption of I on Si(111) and Si(110) surfaces." Surface Science Letters 241, no. 1-2 (January 1991): A5. http://dx.doi.org/10.1016/0167-2584(91)91060-a.

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6

Inoue, Takahiro, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, and Kentarou Sawano. "(Digital Presentation) Epitaxially Grown of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission." ECS Transactions 109, no. 4 (September 30, 2022): 297–302. http://dx.doi.org/10.1149/10904.0297ecst.

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We observe strong room-temperature photoluminescence from Ge microbridges formed on Ge-on-Si (110). The Si (110) substrate is employed to fabricate the bridge along [111] direction as uniaxial strain in the [111] direction is expected to be the most effective to bring direct transition. In this study, we grow Ge-on-Si with (110) orientation and fabricate MB along the [111] directions. Due to the low etching rate of the (111) plane, however, etching of the Si under the square-shaped pads is quite difficult. By contrast, we fabricate branch-like MB, where the underneath Si was fully etched owing to the various directions of the etching. As a result, we obtained very strong resonant light emission.
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7

Weilmeier, M. K., W. H. Rippard, and R. A. Buhrman. "Ballistic electron transport through Au(111)/Si(111) and Au(111)/Si(100) interfaces." Physical Review B 59, no. 4 (January 15, 1999): R2521—R2524. http://dx.doi.org/10.1103/physrevb.59.r2521.

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8

Koryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov, and Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates." Materials 15, no. 18 (September 6, 2022): 6202. http://dx.doi.org/10.3390/ma15186202.

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In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms. As a result of atom substitution, the initially smooth Si(110) surface transforms into a SiC surface covered with octahedron-shaped structures having the SiC(111) and SiC(111¯) facets. The SiC(111)/(111¯) facets forming the angle of 35.3° with the original Si(110) surface act as “substrates” for further growth of semipolar AlN. The structure and morphology of AlN films are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), reflection high-energy electron diffraction (RHEED) and Raman spectroscopy. It is found that the AlN layers are formed by merged hexagonal microcrystals growing in two directions, and the following relation is approximately satisfied for both crystal orientations: AlN(101¯3)||Si(110). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the AlN(101¯3) diffraction peak averaged over the sample area is about 20 arcmin. A theoretical model explaining the presence of two orientations of AlN films on hybrid SiC/Si(110) substrates is proposed, and a method for controlling their orientation is presented.
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9

Kochanski, Greg P., and R. F. Bell. "STM measurements of photovoltage on Si(111) and Si(111):Ge." Surface Science 273, no. 1-2 (June 1992): L435—L440. http://dx.doi.org/10.1016/0039-6028(92)90266-9.

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10

Hartmann, J. M., M. Burdin, G. Rolland, and T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces." Journal of Crystal Growth 294, no. 2 (September 2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.

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11

Silva, Ana, Kjeld Pedersen, Lars Diekhöner, Per Morgen, and Zheshen Li. "Ordered Au(111) layers on Si(111)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25, no. 4 (July 2007): 908–11. http://dx.doi.org/10.1116/1.2715964.

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12

Gerbig, Y. B., S. J. Stranick, D. J. Morris, M. D. Vaudin, and R. F. Cook. "Effect of crystallographic orientation on phase transformations during indentation of silicon." Journal of Materials Research 24, no. 3 (March 2009): 1172–83. http://dx.doi.org/10.1557/jmr.2009.0122.

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In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The occurrence and the contact pressures at which events associated with phase transformation occur, for an indentation force range from 20 to 200 mN, were analyzed and compared for the orientations Si(001), Si(110), and Si(111). It was found that plastic deformation combined with phase transformation during loading was initiated at lower forces (contact pressures) for Si(110) and Si(111) than for Si(001). Also, the contact pressure at which the phase transformation occurred during unloading was strongly influenced by the crystallographic orientation, with up to 38% greater values for Si(110) and Si(111) compared to Si(001). Mapping the residual stress field around indentations by confocal Raman microscopy revealed significant differences in the stress pattern for the three orientations.
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13

Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Cedic Corley-Wiciak, and Bernd Tillack. "High Quality Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1213. http://dx.doi.org/10.1149/ma2022-02321213mtgabs.

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Heteroepitaxial growth of Ge on Si has great interest for various optoelectronic applications such as Ge photodiodes(1). However 4.2% of lattice mismatch causes dislocation formation and island growth. High quality Ge(001) growth techniques are reported in ref.(2-4). Moreover, Ge(111) surface is also interesting because of higher carrier mobility(5). Furthermore, Ge(110) is preferred orientation of virtual substrates for epitaxial graphene growth(6). In the case of the Ge deposition on Si(111) and Si(110) substrates, it seems that the process conditions used for Ge growth on Si(001) are not suitable to realize high crystallinity and smooth surface (7). In this paper, we present a method of high quality and smooth Ge layer growth on Si(111) and Si(110), which is the same level as the Ge growth on Si(001). Epitaxial growth of Ge on Si(111) and Si(110) is carried out using a reduced pressure chemical vapor deposition system. After HF last clean, a wafer is baked at 1000°C and cooled down to 600°C in H2 and further to 300-550°C in N2 to form a hydrogen-free Si surface. Then a 100 nm thick Ge layer is deposited as a seed layer using GeH4 with N2 carrier gas. Afterward the wafer is heated up to 450-650°C in H2 and the main part of Ge is deposited using a H2-GeH4 gas mixture. For threading dislocation density (TDD) reduction, annealing at 800°C in H2 is performed for several times (cyclic annealing) by interrupting the Ge growth. Atomic-force microscopy (AFM) is used for surface roughness analysis. Scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) are used for structural characterization of the Ge layer. Secco defect etching combined with angle view scanning electron microscopy (SEM) or optical microscope is used for TDD evaluation. Figure 1(a,b) summarize the root mean square (RMS) roughness of Ge(111) and Ge(110) seed layers grown at 300-550°C before and after postannealing at 600-800°C. If the growth temperature is lower than 350°C for Ge(111) and 400°C for Ge(110), a significant increase of the surface roughness is observed after postannealing at 700°C and 800°C, respectively. For both crystal orientations, the lowest RMS roughness is observed by depositing at 450°C for as deposited and postannealed samples. The maintained RMS roughness even after postannealing at 800oC may be indicating good crystal quality even at as deposited condition. To confirm the influence of the growth temperature on the crystallinity, cross section TEM images of the Ge(111) and the Ge(110) seed layers deposited at 300°C and 450°C are shown in Fig. 2(a-d). In the case of Ge growth at 300°C (Fig. 2(a,b)), a very high density of stacking faults (SF) and high surface roughness are observed for both crystal orientations. In contrast, by depositing at 450°C (Fig. 2(c,d)), lower SF density in the Ge layer is observed compared to that at 300°C. By postannealing, an improvement of crystallinity is observed for the Ge seed layers deposited at 450°C. However, in the case of 300°C, the crystallinity cannot be improved by the postannealing, because a too high density of dislocations and SF may cause irregular Ge atom migration. As the result, surface roughening occurs. Figure 3(a,b) show AFM surface roughness images after 5 μm-thick Ge(111) and Ge(110) deposited with cyclic annealing at 800°C, respectively. Clear terraces of ~0.3 and ~0.2 nm, whose heights are close to those of Ge(111) bilayer and Ge(110) monolayer, are observed, respectively. RMS roughness of the Ge(111) and the Ge(110) are 0.51 and 0.35 nm, respectively. These RMS roughnesses are comparable to a level reported for Ge (001) in ref.(1). Figure 4 shows TDD of Ge(111) and Ge(110) surfaces as a function of the Ge thickness deposited with cyclic annealing on Si(111) and Si(110) substrates. For both orientations, TDD of ~4×108 cm-2 is obtained for 500 nm-thick samples. With increasing the Ge thickness, the TDD is reduced and levels below TDD of ~5×106 cm-2 are achieved for both Ge (111) and Ge(110) for 5 μm-thick Ge. These methods enable high quality virtual substrate fabrication not only for (001) surfaces but also for (111) and (110) orientation without a chemical mechanical polishing process. References Lischke et al. Nature Photonics15 (2021) 925 Yamamoto et al. Solid-State Electron. 60 (2010) 2 Yamamoto et al. Semicond. Sci. Technol. 33 (2018) 124007 M. Hartmann et al. J. Appl. Phys. 95 (2004) 5905 H. Lee et al. IEDM Tech. Digest (2009) 09-457 J-H. Lee et al. Science 344 6181(2014) 286 M. Hartmann et al. J. Cryst. Growth 310 (2008) 5287 Figure 1
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14

Go, Hyun Young, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, M. Tanaka, and Kazuo Shinozaki. "Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates." Key Engineering Materials 421-422 (December 2009): 111–14. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.111.

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We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.
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15

Sadoh, Taizoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, and Masanobu Miyao. "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator." Key Engineering Materials 470 (February 2011): 8–13. http://dx.doi.org/10.4028/www.scientific.net/kem.470.8.

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We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111) orientations on Si (100), (110), and (111) substrates, respectively, covered with SiO2films. We revealed that crystallization is triggered by Si-Ge mixing in the seeding regions in this process. Based on this mechanism, we have proposed a novel technique to realize orientation-controlled Ge layers on transparent insulating substrates by using Si artificial micro-seeds with (100) and (111)-orientations. This achieved epitaxial growth of single crystalline (100) and (111)-oriented Ge stripes on quartz substrates. The Ge layers showed a high hole mobility exceeding 1100 cm2/Vs owing to the high crystallinity.
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16

Korobtsov, V. V., V. G. Lifshits, and A. V. Zotov. "Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study." Surface Science 195, no. 3 (January 1988): 466–74. http://dx.doi.org/10.1016/0039-6028(88)90354-8.

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17

Akinci, G., T. R. Ohno, and Ellen D. Williams. "NiSi2 on Si(111)." Surface Science 201, no. 1-2 (January 1988): 27–46. http://dx.doi.org/10.1016/0039-6028(88)90595-x.

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18

Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa, and Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces." Journal of Applied Crystallography 46, no. 4 (July 4, 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.
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19

Becker, R. S., B. S. Swartzentruber, and J. S. Vickers. "Tunneling microscopy of silicon and germanium: Si(111)7×7, SnGe(111)7×7, GeSi(111)5×5, Si(111)9×9, Ge(111)2×8, Ge(100)2×1, Si(110)5×1." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 2 (March 1988): 472–77. http://dx.doi.org/10.1116/1.575399.

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20

Khazaka, Rami, Marc Portail, Philippe Vennéguès, Daniel Alquier, and Jean François Michaud. "Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications." Materials Science Forum 858 (May 2016): 143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.858.143.

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In this work, we report the growth of a 3C-SiC layer oriented along the [111] direction on Si (110)/3C-SiC(001)/Si (001) heterostructure. The growth of the complete layer stack occurs in one deposition run in a Chemical Vapor Deposition (CVD) reactor on on-axis Si (001) substrate. The structural properties of the 3CSiC(111) layer are discussed and the impact of the first 3C-SiC layer on the subsequent growth is highlighted. The 3C-SiC(111) top layer shows two domains rotated by 90o around the growth direction directly linked to the domains rotation in the Si epilayer underneath it. Furthermore, μtwins and stacking faults are present on the inclined (111) planes in the 3C-SiC epilayer.
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21

Lee, Byong-Taek, Byong-Sun Chun, and Kenji Hiraga. "Microstructure of gas-atomized Al-20 wt. % Si-1 wt. % Ni powders studied by electron microscopy." Journal of Materials Research 9, no. 10 (October 1994): 2519–23. http://dx.doi.org/10.1557/jmr.1994.2519.

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The microstructure of gas-atomized Al-20 wt. % Si-1 wt. % Ni powders was investigated by electron microscopy. Primary Si crystals about 2 μm in size are homogeneously distributed in the Al matrix. Eutectic Si crystals about 50 nm in size are precipitated with the definite crystallographic relationship of 〈110〉Si ‖ 〈110〉Al. Most of the interfaces between Al and Si are semicoherently bonded with close-packed planes of {111}Si and {111}Al. The special crystallographic relationship and interfaces are interpreted by matching between Si and Al lattice spacings.
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22

Cho, C. C., W. M. Duncan, T. H. Lin, and S. K. Fan. "Photoluminescence from submicron CaF2:Nd films grown epitaxially on Si(111) and Al(111)/Si(111)." Applied Physics Letters 61, no. 15 (October 12, 1992): 1757–59. http://dx.doi.org/10.1063/1.108417.

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23

Voigtländer, Bert, Martin Kästner, and Pavel Šmilauer. "Magic Islands in Si/Si(111) Homoepitaxy." Physical Review Letters 81, no. 4 (July 27, 1998): 858–61. http://dx.doi.org/10.1103/physrevlett.81.858.

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24

Murayama, Misao, Takashi Nakayama, and Akiko Natori. "Au–Si Bonding on Si(111) Surfaces." Japanese Journal of Applied Physics 40, Part 1, No. 12 (December 15, 2001): 6976–79. http://dx.doi.org/10.1143/jjap.40.6976.

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25

Handa, Hiroyuki, Shun Ito, Hirokazu Fukidome, and Maki Suemitsu. "Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates." Materials Science Forum 711 (January 2012): 242–45. http://dx.doi.org/10.4028/www.scientific.net/msf.711.242.

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By conducting a heteroepitaxy of a 3C-SiC film on a Si substrate and by annealing its surface in a UHV ambient, epitaxial graphene can be formed on such 3C-SiC virtual substrates. While the growth on the Si-terminated 3C-SiC(111)/Si (111) surface is known to proceed in a similar manner as on the Si-terminated 6H-SiC(0001) surface, successful growth of graphene on 3C-SiC(100)/Si (100) and 3C-SiC(110)/Si (110) surfaces remains puzzling. We have carried out detailed cross-sectional transmission-electron-microscopy observations on these systems to find out that (111)-facets may play crucial roles in the initiation of graphene on these surfaces. This observation also accounts for the absence of the interface layer at the graphene/SiC in these orientations.
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26

Björketun, L.-O., L. Hultman, O. Kordina, and J.-E. Sundgren. "Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition." Journal of Materials Research 13, no. 9 (September 1998): 2632–42. http://dx.doi.org/10.1557/jmr.1998.0367.

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Texture evolution in Si/SiC multilayers deposited by atmospheric pressure chemical vapor deposition on carbonized Si(001) substrates was investigated using x-ray diffraction and transmission electron microscopy. SiC layers were epitaxial and (001)-oriented. Si layers deposited on the SiC exhibited a columnar structure with predominantly (110) orientation which could be related to the nucleation. Orientational relationships were Si[111] ║ SiC[110] and Si[112] ║ SiC[110]. Also, a low density of (112)-oriented columns was present. Extensive twinning on the vertical {111} planes within the Si columns led to domains of hexagonal stacking up to 10 nm in size with the presence of 2H-Si and 4H-Si. Subsequent SiC layer growth on the (110)-oriented Si layer resulted in a (110)-oriented SiC layer if the Si layer was carbonized prior to growth.
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27

Meade, Robert D., and David Vanderbilt. "Adatoms on Si(111) and Ge(111) surfaces." Physical Review B 40, no. 6 (August 15, 1989): 3905–13. http://dx.doi.org/10.1103/physrevb.40.3905.

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28

Robinson, I. K., W. K. Waskiewicz, R. T. Tung, and J. Bohr. "Ordering atSi(111)a−Siand Si(111)/SiO2Interfaces." Physical Review Letters 57, no. 21 (November 24, 1986): 2714–17. http://dx.doi.org/10.1103/physrevlett.57.2714.

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29

Stadler, R., D. Vogtenhuber, and R. Podloucky. "Ab initiostudy of theCoSi2(111)/Si(111)interface." Physical Review B 60, no. 24 (December 15, 1999): 17112–22. http://dx.doi.org/10.1103/physrevb.60.17112.

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30

Kitabatake, M., T. Kawasaki, and T. Korechika. "Heteroepitaxial growth of InSb(111) on Si(111)." Thin Solid Films 281-282 (August 1996): 17–19. http://dx.doi.org/10.1016/0040-6090(96)08565-3.

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31

Mårtensson, P., G. V. Hansson, and P. Chiaradia. "Similarity of Si(110)5×1 and Si(111)2×1 surfaces." Physical Review B 31, no. 4 (February 15, 1985): 2581–83. http://dx.doi.org/10.1103/physrevb.31.2581.

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32

Zhang, L., E. Deckardt, A. Weber, C. Schönenberger, and D. Grützmacher. "Directional scrolling of hetero-films on Si(110) and Si(111) surfaces." Microelectronic Engineering 83, no. 4-9 (April 2006): 1233–36. http://dx.doi.org/10.1016/j.mee.2006.01.128.

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33

Molinàs i Mata, P., M. I. Alonso, and M. Cardona. "Space groups of Ge/Si superlattices grown along the [110], [111], [112], [120], and [114] directions." Solid State Communications 74, no. 5 (May 1990): 347–51. http://dx.doi.org/10.1016/0038-1098(90)90500-b.

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34

Ortega, J., F. Flores, R. Pérez, and A. Levy Yeyati. "Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and SnGe(111)." Progress in Surface Science 59, no. 1-4 (September 1998): 233–43. http://dx.doi.org/10.1016/s0079-6816(98)00049-5.

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35

Moraru, Daniel, Hiroshi Kato, Seiji Horiguchi, Yasuhiko Ishikawa, Hiroya Ikeda, and Michiharu Tabe. "Fowler-Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures." Japanese Journal of Applied Physics 45, No. 11 (March 10, 2006): L316—L318. http://dx.doi.org/10.1143/jjap.45.l316.

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36

Markert, K., P. Pervan, W. Heichler, and K. Wandelt. "Structural and electronic properties of Ag/Si(111) and Au/Si(111) surfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 4 (July 1989): 2873–78. http://dx.doi.org/10.1116/1.576161.

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37

Kuzmin, M., R. L. Vaara, P. Laukkanen, R. E. Perälä, and I. J. Väyrynen. "Structural and statistical analysis of Yb/Si(111) and Eu/Si(111) reconstructions." Surface Science 549, no. 3 (February 2004): 183–95. http://dx.doi.org/10.1016/j.susc.2003.12.005.

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38

Ditzinger, U. A., Ch Lunau, B. Schieweck, St Tosch, H. Neddermeyer, and M. Hanbücken. "Photoemission from K/Si(111)7 × 7 and Cs/Si(111)7 × 7." Surface Science 211-212 (April 1989): 707–15. http://dx.doi.org/10.1016/0039-6028(89)90832-7.

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39

Ditzinger, U. A., Ch Lunau, B. Schieweck, St Tosch, H. Neddermeyer, and M. Hanbücken. "Photoemission from K/Si(111)7×7 and Cs/Si(111)7×7." Surface Science Letters 211-212 (April 1989): A142. http://dx.doi.org/10.1016/0167-2584(89)90380-0.

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40

Magaud-Martinage, L., D. Mayou, A. Pasturel, and F. Cyrot-Lackmann. "Schottky barriers calculations at the CoSi2/Si(111) and NiSi2/Si(111) interfaces." Surface Science Letters 256, no. 3 (October 1991): A543. http://dx.doi.org/10.1016/0167-2584(91)91193-z.

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41

Timoshnev, S. N., A. M. Mizerov, M. N. Lapushkin, S. A. Kukushkin, and A. D. Bouravleuv. "Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates." Semiconductors 53, no. 14 (December 2019): 1935–38. http://dx.doi.org/10.1134/s1063782619140239.

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42

Yamamoto, Yuji, Wei-Chen Wen, Markus Andreas Schubert, Cedic Corley-Wiciak, and Bernd Tillack. "High Quality Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition." ECS Transactions 109, no. 4 (September 30, 2022): 205–15. http://dx.doi.org/10.1149/10904.0205ecst.

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A method for high quality epitaxial growth of Ge on Si (111) and Si (110) is investigated by reduced pressure chemical vapor deposition. Two step Ge epitaxy (low temperature Ge seed and high temperature main Ge growth) with several cycles of annealing by interrupting the Ge growth (cyclic annealing) is performed. In the case of Ge seed layer growth below 350 °C for (111) and 400 °C for (110) orientation, huge surface roughening due to too high dislocation density is observed after the following annealing step. For both crystal orientations, a high crystallinity Ge seed layer is realized by combination of 450 °C growth with 800 °C annealing. Once the high-quality Ge seed layer is deposited, high crystal quality Ge can be grown at 600 °C on the seed layer for both crystal orientations. For the 5 µm thick Ge layer deposited with the cyclic annealing process at 800 °C, a Si diffusion length of ~400 nm from the interface, RMS roughness below 0.5 nm and threading dislocation density of 5×106 cm-2 are achieved for both (111) and (110) substrates.
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43

Chiang, Yi-Ting, Yi Chou, Chang-Hsun Huang, Wei-Ting Lin, and Yi-Chia Chou. "Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process." CrystEngComm 21, no. 29 (2019): 4298–304. http://dx.doi.org/10.1039/c9ce00539k.

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44

Jacob, J., A. Gomes Silva, K. Fleischer, and J. F. McGilp. "Optical second-harmonic generation studies of Si(111)-√3×√3-Ag and Si(111)-3×1-Ag grown on vicinal Si(111)." physica status solidi (c) 5, no. 8 (June 2008): 2649–52. http://dx.doi.org/10.1002/pssc.200779103.

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45

Lee, Dong Nyung. "Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates." Advanced Materials Research 26-28 (October 2007): 623–28. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.623.

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Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.
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46

Twigg, M. E., and E. D. Richmond. "Microtwin morphology for silicon on sapphire." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 256–57. http://dx.doi.org/10.1017/s0424820100126184.

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It is well established that microtwins play an important role in accommodating stresses that accompany the growth of Si on sapphire (SOS) for the (001)Si/(1012)sapphire hetero-epitaxial system. When examined in cross section along the <110> direction by the transmission electron microscope (TEM), microtwins corresponding to two of the four twinning systems are clearly visible. It is also apparent that one of the two twinning systems dominates. For the [110] beam direction, the (111) twinning system accounts for the majority of visible microtwins, whereas the (111) twinning system accounts for the minority. It is thought that the abundance of (111) twins is due to a coincidence between the (111) planes of the Si matrix and the (1232) planes of the sapphire substrate; there is also a coincidence between the (113) planes of the majority twinning system and the (0112) sapphire planes. There are no such coincidences, however, between the minority twinning system in Si and the sapphire substrate.
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47

Tsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang, and Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications." Beilstein Journal of Nanotechnology 8 (September 15, 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.
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48

Severino, Andrea, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L. M. S. Perdicaro, Giuseppe Condorelli, Marco Mauceri, and Francesco La Via. "Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si." Materials Science Forum 615-617 (March 2009): 149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.149.

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The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.
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49

Stesmans, A., and G. Van Gorp. "⋅Si≡Si3defect at thermally grown (111)Si/Si3N4interfaces." Physical Review B 52, no. 12 (September 15, 1995): 8904–20. http://dx.doi.org/10.1103/physrevb.52.8904.

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50

Lanczycki, C. J., R. Kotlyar, E. Fu, Y. N. Yang, E. D. Williams, and S. Das Sarma. "Growth of Si on the Si(111) surface." Physical Review B 57, no. 20 (May 15, 1998): 13132–48. http://dx.doi.org/10.1103/physrevb.57.13132.

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