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Zeitschriftenartikel zum Thema „ZnGeP2“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

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1

Voevodin, Vladimir, Svetlana Bereznaya, Yury S. Sarkisov, Nikolay N. Yudin, and Sergey Yu Sarkisov. "Terahertz Generation by Optical Rectification of 780 nm Laser Pulses in Pure and Sc-Doped ZnGeP2 Crystals." Photonics 9, no. 11 (2022): 863. http://dx.doi.org/10.3390/photonics9110863.

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Terahertz wave generation through the optical rectification of 780 nm femtosecond laser pulses in ZnGeP2 crystals has been studied. All of the possible interactions of types I and II were analyzed by modeling and experimentally. We demonstrate the possibility of broadband “low-frequency” terahertz generation by an ee–e interaction (with two pumping waves and a generated terahertz wave; all of these had extraordinary polarization in the crystal) and “high-frequency” terahertz generation by an oe–e interaction. The arising possibility of achieving the narrowing of the terahertz generation bandwidth at the oe–e interaction using thicker ZnGeP2 crystals is experimentally confirmed. It has been found that the thermal annealing of as-grown ZnGeP2 crystals and their doping with a 0.01 mass % of Sc reduces the absorption in the “anomalous absorption” region (λ = 0.62–3 μm). The terahertz generation by the oo–e interaction in (110) ZnGeP2:Sc and the as-grown ZnGeP2 crystals of equal thicknesses was compared. It has been found that ZnGeP2:Sc is more efficient for 780 nm femtosecond laser pulses optical rectification.

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2

Ning, Jing, Rong Dai, Qiao Wu, Lei Zhang, Tingting Shao, and Fuchun Zhang. "Density Functional Theory Study of Infrared Nonlinear Optical Crystal ZnGeP₂." Journal of Nanoelectronics and Optoelectronics 16, no. 10 (2021): 1544–53. http://dx.doi.org/10.1166/jno.2021.3110.

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The electronic structure and optical properties of ZnGeP2 crystal were studied using DFT. The electronic structure results showed that ZnGeP2 is a nonlinear optical crystal with a direct wide bandgap. The bandgap was calculated to be 1.99 eV using the HSE06 method, which is exactly equal to the experimental value. The optical properties showed strong absorption and reflection in the ultraviolet region and strong transmittance in the infrared region. The average static refractive index of ZnGeP2 was 2.73, and the static birefractive index was 0.04. The above results indicate that ZnGeP2 is a potential infrared nonlinear optical crystal material.

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3

Zhao, Xin, Shi Fu Zhu, and Yong Qiang Sun. "Growth of ZnGeP₂ Single Crystal by Three-Temperature-Zone Furnace." Advanced Materials Research 179-180 (January 2011): 945–48. http://dx.doi.org/10.4028/www.scientific.net/amr.179-180.945.

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In order to meet the requirements of growing high-quality ZnGeP2, a crystal growth furnace with three-temperature-zone was designed and fabricated based on a conventional vertical two-zone tubular resistance furnace. Appropriate temperature gradients of 12~15°C/cm at the growth interface and stable thermal profile were obtained. A crack-free ZnGeP2 single crystal with size of Φ15mm×30mm was grown successfully in the furnace mentioned above. The as-grown crystal was characterized by X-ray diffraction (XRD) and Infrared (IR) spectrophotometers. It is found that there is a cleavage face of (101) and X-ray multiple diffraction peaks of the {101} faces are observed, The infrared transmission of a ZnGeP2 wafer of 3 mm thickness is about 50% in the region of 3~10μm. These results show the designed crystal growth furnace is suitable for growth of ZnGeP2 crystal, and the as-grown ZnGeP2 crystal has good structural integrity and high quality.

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4

Pal, S., D. Sharma, M. Chandra, et al. "Thermodynamic properties of chalcogenide and pnictide ternary tetrahedral semiconductors." Chalcogenide Letters 21, no. 1 (2024): 1–9. http://dx.doi.org/10.15251/cl.2024.211.1.

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In this paper, we present thermodynamic properties such as heat of formation, heat of fusion and entropy of fusion for chalcopyrite structured solids with the product of ionic charges and nearest neighbour distance d (Å). The heat of formation (∆Hf) of these compounds exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (Å), but fall on different straight lines according to the ionic charge product of the compounds. On the basis of this result two simple heat of formation (∆Hf)heat of fusion (∆HF), and heat of formation (∆Hf)entropy of fusion (∆SF), relationship are proposed and used to estimate the heat of fusion (∆HF) and entropy of fusion (∆SF) of these semiconductors. We have applied the proposed relation to AIIBIVC2 V and AI BIIIC2 VI chalcopyrite semiconductor and found a better agreement with the experimental data than the values found by earlier researchers. The results for heat of formation differ from experimental values by the following amounts: 0.3% (CuGaSe2), 6.7% (CuInSe2), 5% (AgInSe2), 5% (ZnGeP2), 6% (ZnGeP2), 0.4% (ZnSnP2), 0.7% (ZnSiAs2), 2.6% (ZnGeAs2), 1.2% (ZnSnAs2), 3.8% (CdGeP2), 6.4% (CdGeAs2), the results for heat of fusion differ from experimental values by the following amounts: 2.6% (CuGaS2), 0.6% (CuInTe2), 6% (ZnGeAs2), 8.8% (ZnSiAs2) and the results for entropy of fusion differ from experimental values by the following amounts: 6% (CuInSe2), 8% (CdSiP2).

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5

Yudin, Nikolay N., Andrei Khudoley, Mikhail Zinovev, et al. "Experimental Investigation of Laser Damage Limit for ZPG Infrared Single Crystal Using Deep Magnetorheological Polishing of Working Surfaces." Crystals 14, no. 1 (2023): 32. http://dx.doi.org/10.3390/cryst14010032.

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Zinc germanium phosphide (ZGP) crystals have garnered significant attention for their nonlinear properties, making them good candidates for powerful mid-IR optical parametric oscillators and second-harmonic generators. A ZnGeP2 single crystal was treated by deep magnetorheological processing (MRP) until an Angstrom level of roughness. The studies presented in this article are devoted to the experimental evaluation of the influence of deep removal (up to 150 μm) from the surface of a ZnGeP2 single crystal by magnetorheological polishing on the parameters of optical breakdown. It was shown that the dependence of the ZnGeP2 laser-induced damage threshold on MRP depth is a smooth monotonically decreasing logarithmic function. The obtained logarithmic dependence indicates the thermal nature of optical breakdown and the dependence of the ZnGeP2 laser-induced damage threshold on the concentration of surface absorbing defects.

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6

Yudin, Nikolai, Oleg Antipov, Ilya Eranov, et al. "Laser-Induced Damage Threshold of Single Crystal ZnGeP2 at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates." Crystals 12, no. 5 (2022): 652. http://dx.doi.org/10.3390/cryst12050652.

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The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP2 nonlinear crystals induced by a repetitively-pulsed Ho3+:YAG laser at 2091 nm. Two types of ZnGeP2 crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crystal structure factor for a higher LIDT was found to be a reduced dislocation density of crystal lattice. The ZnGeP2 nonlinear crystals characterized by the high structural perfection with low density of dislocations and free from twinning and stacking faults were measured to have a 3.5 J/cm2 pulse fluence damage threshold and 10.5 MW/cm2 peak intensity damage threshold at 12 kHz PRR; at 40 kHz PRR the pulse fluence damage threshold increased to over 6 J/cm2, but the peak intensity damage threshold dropped to 5.5 MW/cm2.

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7

Voevodin, Vladimir I., Valentin N. Brudnyi, Yury S. Sarkisov, Xinyang Su, and Sergey Yu Sarkisov. "Electrical Relaxation and Transport Properties of ZnGeP2 and 4H-SiC Crystals Measured with Terahertz Spectroscopy." Photonics 10, no. 7 (2023): 827. http://dx.doi.org/10.3390/photonics10070827.

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Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at a specified photoexcitation condition and the Drude–Smith fitting of the photoconductivity spectra. The determined terahertz charge carrier mobility values are ~453 cm2/V·s for 4H-SiC and ~37 cm2/V·s for ZnGeP2 crystals. The charge carrier lifetimes and the contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of bulk and surface Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that ZnGeP2 possesses short charge carrier lifetimes (a~0.01 ps−1, b~6 × 10−19 cm3·ps−1 and c~7 × 10−40 cm6·ps−1) compared with 4H-SiC (a~0.001 ps−1, b~3 × 10−18 cm3·ps−1 and c~2 × 10−36 cm6·ps−1), i.e., τ~100 ps and τ~1 ns at the limit of relatively low injection, when the contribution from Auger and interband radiative recombination is small. The thermal annealing of as-grown ZnGeP2 crystals and the electron irradiation reduced the charge carrier lifetime, while their doping with 0.01 mass % of Sc increased the charger carrier lifetime and reduced mobility. It was found that the dark terahertz complex conductivity of the measured crystals is not fitted by the Drude–Smith model with reasonable parameters, while their terahertz photoconductivity can be fitted with acceptable accuracy.

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8

Yudin, Nikolai, Andrei Khudoley, Mikhail Zinoviev, et al. "The Influence of Angstrom-Scale Roughness on the Laser-Induced Damage Threshold of Single-Crystal ZnGeP2." Crystals 12, no. 1 (2022): 83. http://dx.doi.org/10.3390/cryst12010083.

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Magnetorheological processing was applied to polish the working surfaces of single-crystal ZnGeP2, in which a non-aqueous liquid with the magnetic particles of carbonyl iron with the addition of nanodiamonds was used. Samples of a single-crystal ZnGeP2 with an Angstrom level of surface roughness were received. The use of magnetorheological polish allowed the more accurate characterization of the possible structural defects that emerged on the surface of a single crystal and had a size of ~0.5–1.5 μm. The laser-induced damage threshold (LIDT) value at the indicated orders of magnitude of the surface roughness parameters was determined not by the quality of polishing, but by the number of point depressions caused by the physical limitations of the structural configuration of the crystal volume. These results are in good agreement with the assumption made about a significant effect of the concentration of dislocations in a ZnGeP2 crystal on LIDT.

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9

Yudin, Nikolay, Mikhail Zinoviev, Vladimir Kuznetsov, et al. "Effect of Dopants on Laser-Induced Damage Threshold of ZnGeP2." Crystals 13, no. 3 (2023): 440. http://dx.doi.org/10.3390/cryst13030440.

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The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to an increase in the laser-induced damage threshold (LIDT) of a single crystal (monocrystal), ZnGeP2; upon annealing at a temperature of 750 °C, the damage threshold of samples doped with Mg and Se increases by 31% and 21% from 2.2 ± 0.1 J/cm2 to 2.9 ± 0.1 and 2.7 ± 0.1 J/cm2, respectively. When ZnGeP2 is doped with Ca, the opposite trend is observed. It has been suggested that the changes in the LIDT depending on the introduced impurity by diffusion can be explained by the creation of additional energy dissipation channels due to the processes of radiative and fast non-radiative relaxation through impurity energy levels, which further requires experimental confirmation.

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10

Schnepf, Rekha R., Andrea Crovetto, Prashun Gorai, et al. "Reactive phosphine combinatorial co-sputtering of cation disordered ZnGeP₂ films." Journal of Materials Chemistry C 10, no. 3 (2022): 870–79. http://dx.doi.org/10.1039/d1tc04695k.

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11

Schunemann, Peter G., and Thomas M. Pollak. "Ultralow Gradient HGF-Grown ZnGeP2 and CdGeAs2 and Their Optical Properties." MRS Bulletin 23, no. 7 (1998): 23–27. http://dx.doi.org/10.1557/s0883769400029043.

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ZnGeP2 and CdGeAs2 have long been recognized as promising crystals for infrared frequency generation. They exhibit the highest nonlinear optical coefficients (d36 equals 75 pm/V and 236 pm/V for ZnGeP2 and CdGeAs2, respectively) among all known compounds that possess adequate birefringence for phase matching. ZnGeP2's transparency range (0.62−13 μm) makes it the optimum material for shifting the wavelength of 2-μm pump lasers into the 3–5-μm range via optical parametric oscillation (OPO), whereas that of CdGeAs2 (2.3–18 μm) is better suited for doubling the frequency of CO2 lasers (9–11 μm) into the same range via second-harmonic generation. In both cases however, the application of these materials has been hindered by great difficulty in achieving crack-free single crystals, and by large defect-related absorption losses.The horizontal-gradient-freeze (HGF) growth technique has been instrumental in overcoming these difficulties. “Ultralow” axial gradients (1–3°C/cm) have been used to control stoichiometry by minimizing vapor transport as well as to eliminate cracking due to anisotropic thermal expansion. (The a-axis and c-axis thermal-expansion coefficients of ZnGeP2 differ by a factor of two, whereas those of CdGeAs2 differ by a factor of 15.) In addition, oriented seeds were used to ensure monocrystalline nucleation (because even a small degree of polycrystallinity can lead to cracking even in low gradients) and growth along preferred directions to facilitate fabrication of device crystals. Finally growth was performed in a two-zone, transparent furnace in order to monitor and control the seeding-and-growth process.

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12

Dyomin, Victor, Alexander Gribenyukov, Sergey Podzyvalov, et al. "Application of Infrared Digital Holography for Characterization of Inhomogeneities and Voluminous Defects of Single Crystals on the Example of ZnGeP2." Applied Sciences 10, no. 2 (2020): 442. http://dx.doi.org/10.3390/app10020442.

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In this work, the method of IR digital holography intended for detection of volumetric defects in ZnGeP2 single crystals has been tested. The holographic method is verified by a comparison of the results obtained with the data obtained by other methods. The spatial resolution of the experimental setup is ~15–20 µm. The volumetric defects of the ZnGeP2 crystal structure (in samples with thickness up to 50 mm) such as growth striations, dislocation chain, and inclusions of the second phase (Zn3P2) shaped as needles up to ~100 µm long and ~10 µm wide have been visualized by the method of IR digital holography.

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13

Moldovan, M., and N. C. Giles. "Broad-band photoluminescence from ZnGeP2." Journal of Applied Physics 87, no. 10 (2000): 7310–15. http://dx.doi.org/10.1063/1.372985.

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14

Verozubova, G. A., A. I. Gribenyukov, and Yu P. Mironov. "Two-temperature synthesis of ZnGeP2." Inorganic Materials 43, no. 10 (2007): 1040–45. http://dx.doi.org/10.1134/s0020168507100020.

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15

Kalygina, Vera, Sergey Podzyvalov, Nikolay Yudin, et al. "Effect of UV and IR Radiation on the Electrical Characteristics of Ga2O3/ZnGeP2 Hetero-Structures." Crystals 13, no. 8 (2023): 1203. http://dx.doi.org/10.3390/cryst13081203.

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The data on electrical and photoelectric characteristics of Ga2O3/ZnGeP2 hetero-structures formed by RF magnetron sputtering Ga2O3 target with a purity of (99.99%) were obtained. The samples are sensitive to UV radiation with a wavelength of λ = 254 nm and are able to work offline as detectors of short-wave radiation. Structures with Ga2O3 film that was not annealed at 400 °C show weak sensitivity to long-wavelength radiation, including white light and near-IR (λ = 808 and 1064 nm). After annealing in an air environment (400 °C, 30 min), ZnGeP2 crystals in contact with Ga2O3 show n-type conductivity semiconductor properties, the sensitivity of Ga2O3/ZnGeP2 hetero-structures increases in the UV and IR ranges; the photovoltaic effect is preserved. Under λ = 254 nm illumination, the open-circuit voltage is fixed at positive potentials on the electrode to Ga2O3, the short-circuit current increases by three orders of magnitude, and the responsivity increases by an order of magnitude. The structures detect the photovoltaic effect in the near-IR range and are able to work offline (remotely) as detectors of long-wavelength radiation.

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16

Zinovev, Mikhail, Nikolay N. Yudin, Igor Kinyaevskiy, et al. "Multispectral Anti-Reflection Coatings Based on YbF3/ZnS Materials on ZnGeP2 Substrate by the IBS Method for Mid-IR Laser Applications." Crystals 12, no. 10 (2022): 1408. http://dx.doi.org/10.3390/cryst12101408.

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A multispectral anti-reflective coating of high radiation strength for laser applications in the IR spectrum for nonlinear ZnGeP2 crystals has been developed for the first time. The coating was constructed using YbF3/ZnS. The developed coating was obtained by a novel approach using ion-beam deposition of these materials on a ZnGeP2 substrate. It has a high LIDT of more than 2 J/cm2. Optimal layer deposition regimes were found for high film density and low absorption, and good adhesion of the coating to the substrate was achieved. At the same time, there was no dissociation of the double compound under high-energy ions.

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17

Bairamov, B. H., V. Yu Rud', and Yu V. Rud'. "Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2." MRS Bulletin 23, no. 7 (1998): 41–44. http://dx.doi.org/10.1557/s0883769400029080.

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Ternary-chalcopyrite structure ZnGeP2, CdGeAs2 (II-IV-V2) and AgGaS2, AgGaSe2 (I-III-VI2) compounds are currently of technological interest. They show the most promise for practical nonlinear optical applications in the areas of high-efficiency optical parametric oscillators and frequency up-converters for the infrared (ir) range as well as for widespectral-range optoelectronic devices. (See also the article by Schunemann, Schepler, and Budni in this issue.) However extensive realization of their potential has still not been achieved. One of the principal difficulties in the way to obtaining high-device-quality ZnGeP2, CdGeAs2, AgGaS2, and AgGaSe2 single crystals is undesired optical absorption in their transparency range near the fundamental band edge induced by lattice-related defects. This article summarizes selected aspects of dopant-incorporation techniques of these crystals including dopant choice of dopant material and monitoring of dopant incorporation as done in our laboratory.In general for the ternary chalcopyrite compounds, doping-incorporation processes are more complicated in comparison to those of binary zinc-blende III-V compounds. The most common sources of dominant incorporation of acceptors and donors in as-grown chalcopyrites are believed to appear from (1) nonstoichiometric melts as well as by doping with different elements during the growth process and (2) incomplete removal of disorder on the cation sublattice during subsequent cooling. Furthermore the chalcopyrite structure II-IV-V2 undergoes a disorder-order phase transition upon cooling through approximately 1220 K for ZnGeP2 and 900 K for CdGeAs2. At these transition temperatures, solidification can be complicated also by supercooling phenomena, and the crystals transform from the cubic zinc-blende structure (where Zn atoms randomly fill cation sites) to the ordered chalcopyrite structure (e.g., when Zn and Ge occupy alternating cation sites in ZnGeP2).

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18

Yudin, N. N., O. L. Antipov, A. I. Gribenyukov, et al. "Influence of line-by-line processing technology on the optical breakthreshold of a ZnGeP2 single crystal." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 11 (2021): 102–7. http://dx.doi.org/10.17223/00213411/64/11/102.

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The threshold of optical breakdown of a ZnGeP2 single crystal manufactured by LOK LLC, Russia, was determined, which was W0d =1.8 J / cm2, and the threshold of optical breakdown of a crystal manufactured by Harbin Institute of Technology, China, was also measured, which was W0d =2.1 J/cm2 (at a wavelength of 2,097 microns of laser radiation and a pulse repetition frequency of 10 kHz with a pulse duration of 35 ns).The effect of post-processing of ZnGeP2 single crystals (polishing of working surfaces )is investigated, application of antireflection interference coatings) to the threshold of optical breakdown of the surface of these crystals. It is established that the presence of silicon conglomerates in the interference antireflection coating leads to a decrease in the optical breakdown threshold.

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19

Collins, Sean M., Jeanne M. Hankett, Azhar I. Carim, and Stephen Maldonado. "Preparation of photoactive ZnGeP2 nanowire films." Journal of Materials Chemistry 22, no. 14 (2012): 6613. http://dx.doi.org/10.1039/c2jm16453a.

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20

Zapol, Peter, Ravindra Pandey, Mel Ohmer, and Julian Gale. "Atomistic calculations of defects in ZnGeP2." Journal of Applied Physics 79, no. 2 (1996): 671. http://dx.doi.org/10.1063/1.360811.

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21

Wang, Lijun, Lihua Bai, K. T. Stevens, et al. "Luminescence associated with copper in ZnGeP2." Journal of Applied Physics 92, no. 1 (2002): 77–81. http://dx.doi.org/10.1063/1.1481971.

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22

Verozubova, G. A., and A. I. Gribenyukov. "Growth of ZnGeP2 crystals from melt." Crystallography Reports 53, no. 1 (2008): 158–63. http://dx.doi.org/10.1134/s1063774508010215.

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23

Verozubova, G. A., A. I. Gribenyukov, V. V. Korotkova, and M. P. Ruzaikin. "ZnGeP2 synthesis and growth from melt." Materials Science and Engineering: B 48, no. 3 (1997): 191–97. http://dx.doi.org/10.1016/s0921-5107(97)00046-9.

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24

Xing, G. C., K. J. Bachmann, and J. B. Posthill. "High‐pressure vapor transport of ZnGeP2." Applied Physics Letters 56, no. 3 (1990): 271–73. http://dx.doi.org/10.1063/1.103285.

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25

Mason, P. D., D. J. Jackson, and E. K. Gorton. "CO2 laser frequency doubling in ZnGeP2." Optics Communications 110, no. 1-2 (1994): 163–66. http://dx.doi.org/10.1016/0030-4018(94)90190-2.

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26

Karavaev, P. M., V. M. Abusev, and G. A. Medvedkin. "Photorefractive effect in ZnGeP2 single crystal." Technical Physics Letters 32, no. 6 (2006): 498–500. http://dx.doi.org/10.1134/s1063785006060149.

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27

Shimony, Y., O. Raz, G. Kimmel, and M. P. Dariel. "On defects in tetragonal ZnGeP2 crystals." Optical Materials 13, no. 1 (1999): 101–9. http://dx.doi.org/10.1016/s0925-3467(99)00018-x.

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28

Bacewicz, R., A. Pietnoczka, W. Gehlhoff, and V. G. Voevodin. "Local order in ZnGeP2:Mn crystals." physica status solidi (a) 204, no. 7 (2007): 2296–301. http://dx.doi.org/10.1002/pssa.200622598.

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29

Tyuterev, V. G. "Electron short-wave phonon scattering in crystals with chalcopyrite lattice." Canadian Journal of Physics 98, no. 8 (2020): 818–23. http://dx.doi.org/10.1139/cjp-2019-0523.

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Electron short-wavelength phonon scattering is an effective channel for energy relaxation in crystals with a pseudo-direct optical gap. The equilibrium parameters of crystal structures and spectra of electrons and phonons in the ternary chalcopyrite compounds ZnSiP2 and ZnGeP2 are calculated self-consistently in good agreement with available experimental and theoretical calculations. The ab initio probabilities of phonon-assisted intervalley scattering of electrons in the conduction bands of the pseudo-direct-gap compounds ZnSiP2 and ZnGeP2 between the central Γ minima and the lowest lateral minima (valleys) at the T and N points have been calculated using the density functional perturbation theory. Electron–phonon scattering rates associated with intervalley phonons are calculated. Coupling constants for intervalley phonons in the chalcopyrite phosphides are close to their values in Si, Ge, and in the binary analog GaP.

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30

Zinovev, Mikhail, Nikolay N. Yudin, Vladimir Kuznetsov, et al. "High-Strength Optical Coatings for Single-Crystal ZnGeP2 by the IBS Method Using Selenide and Oxide Materials." Ceramics 6, no. 1 (2023): 514–24. http://dx.doi.org/10.3390/ceramics6010030.

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The paper presents the results on the development of an optical coating for a single-crystal ZnGeP2 substrate based on a selenide-oxide pair of materials (ZnSe/Al2O3). The obtained coating ensures the operation of OPO in the mid-IR range up to 5 μm wavelengths. The possibility of ZnSe sputtering by the IBS method is shown. The obtained optical coating has a high laser-induced damage threshold (LIDT) value at a 2097 µm wavelength: J/cm2 in energy density and = 101 W/cm2 in power density at a 10 KHz pulse repetition frequency and a pulse duration of 35 ns. Thus, it is shown for the first time that the pair of materials ZnSe/Al2O3 can be used for the deposition of optical coatings by the IBS method with high LIDT values for ZnGeP2 optical elements operating in the mid-IR range.

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Vasilyeva, Inga G., and Ruslan E. Nikolaev. "Non-stoichiometry and point native defects in non-oxide non-linear optical large single crystals: advantages and problems." CrystEngComm 24, no. 8 (2022): 1495–506. http://dx.doi.org/10.1039/d1ce01423d.

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Advances and limitations in the field of growing large, high optical quality single crystals of AgGaS2 (AGS), AgGaGeS4 (AGGS), ZnGeP2 (ZGP), LiInS2 (LIS), LiGaS2 (LGS), LiInSe2 (LISe), LiGaSe2 (LGSe) and LiGaTe2 (LGT) are considered in this article.

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32

Posthill, J. B., G. C. Xing, G. S. Solomon, K. J. Bachmann, and M. L. Timmons. "Phase identification and defect structures in II-IV-V2 heteroepitaxial semiconductor thin films grown on III-V substrates." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 582–83. http://dx.doi.org/10.1017/s0424820100154883.

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The ternary chalcopyrite-structure compound semiconductors (space group , Fig. 1) offer several promising materials properties that may be useful in electronic and optoelectronic devices. These compounds have a wide range of direct and pseudodirect band gaps, and they generally lattice match well to available substrates for heteroepitaxial growth. However, before the properties of this class of materials can be fully exploited, specific issues pertaining to the crystal growth (both bulk and epitaxial) must be understood and optimized. This contribution briefly describes some of our microstructural studies of heteroepitaxial ZnGeAs2-on-GaAs(100) and ZnGeP2-on-GaP(100) grown by organometallic chemical vapor deposition (OMCVD).The details of OMCVD growth of these materials are described in detail elsewhere. Cross-section [110] samples for transmission electron microscopy (TEM) were held at reduced temperature using a liquid nitrogen cooled stage to minimize the deleterious effects of Ar+ ion bombardment during final thinning. Diffraction contrast and phase contrast (HRTEM) imaging was accomplished at 200 kV.

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Dietz, N., I. Tsveybak, W. Ruderman, G. Wood, and K. J. Bachmann. "Native defect related optical properties of ZnGeP2." Applied Physics Letters 65, no. 22 (1994): 2759–61. http://dx.doi.org/10.1063/1.112555.

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34

Rablau, C. I., and N. C. Giles. "Sharp-line luminescence and absorption in ZnGeP2." Journal of Applied Physics 90, no. 7 (2001): 3314–18. http://dx.doi.org/10.1063/1.1399028.

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35

Krivosheeva, A. V., V. L. Shaposhnikov, V. V. Lyskouski, V. E. Borisenko, F. Arnaud d’Avitaya, and J. L. Lazzari. "Prospects on Mn-doped ZnGeP2 for spintronics." Microelectronics Reliability 46, no. 9-11 (2006): 1747–49. http://dx.doi.org/10.1016/j.microrel.2006.08.006.

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36

Verozubova, G. A., A. O. Okunev, A. I. Gribenyukov, A. Yu Trofimiv, E. M. Trukhanov, and A. V. Kolesnikov. "Growth and defect structure of ZnGeP2 crystals." Journal of Crystal Growth 312, no. 8 (2010): 1122–26. http://dx.doi.org/10.1016/j.jcrysgro.2009.11.009.

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37

Cheng, Jiang, Shifu Zhu, Beijun Zhao, et al. "Chemical etching orientation of ZnGeP2 single crystals." Journal of Crystal Growth 318, no. 1 (2011): 729–32. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.008.

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38

Yang, Yongjuan, Yujun Zhang, Qingtian Gu, Huaijin Zhang, and Xutang Tao. "Growth and annealing characterization of ZnGeP2 crystal." Journal of Crystal Growth 318, no. 1 (2011): 721–24. http://dx.doi.org/10.1016/j.jcrysgro.2010.11.039.

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39

Shimony, Y., R. Fledman, I. Dahan, and G. Kimmel. "Anti-phase domain boundaries in ZnGeP2 (ZGP)." Optical Materials 16, no. 1-2 (2001): 119–23. http://dx.doi.org/10.1016/s0925-3467(00)00067-7.

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40

Kataev, Yu G., I. A. Bobrovnikova, V. G. Voevodin, E. I. Drigolenko, L. G. Nesteryuk, and M. P. Yakubenya. "Preparation and properties of epitaxial ZnGeP2 films." Soviet Physics Journal 31, no. 4 (1988): 321–23. http://dx.doi.org/10.1007/bf00892644.

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41

Rud’, V. Yu, and Yu V. Rud’. "ZnGeP2 heterocontact with layered III–VI semiconductors." Technical Physics Letters 23, no. 6 (1997): 415–16. http://dx.doi.org/10.1134/1.1261718.

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42

Endo, T., Y. Sato, H. Takizawa, and M. Shimada. "High-pressure synthesis of ZnSiP2 and ZnGeP2." Journal of Materials Science Letters 11, no. 9 (1992): 567–69. http://dx.doi.org/10.1007/bf00728610.

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43

Xie, Hu, Bei Jun Zhao, Shi Fu Zhu, et al. "Characterization and Vertical Elements Distribution of ZnGeP₂ Single Crystals." Key Engineering Materials 680 (February 2016): 493–97. http://dx.doi.org/10.4028/www.scientific.net/kem.680.493.

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A large, crack-free ZnGeP2 single crystal with size of Φ26 mm×70 mm was grown in a vertical three-zone tubular furnace by modified vertical Bridgman method, i.e. real-time temperature compensation technique with small temperature gradient in double-wall quartz ampoule. The as-grown single crystal was characterized by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). It was found that there is a face of (100) and its second-order XRD peaks were observed. The vertical elements distribution of the main part of the grown crystal has a stoichiometric ratio which is close to the ideal stoichiometry of 1:1:2. The IR transmittance of a sample of 2.5 mm thickness is above 58% in the range from 3500 to 800 cm-1. All these results demonstrate that the quality of the ZnGeP2 single crystal grown by the modified method is good, and could be used in the preparation of devices.

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44

Grechin, Sergey G., and Ilyia A. Muravev. "Crystal ZnGeP2 for Nonlinear Frequency Conversion: Physical Parameters, Phase-Matching and Nonlinear Properties: Revision." Photonics 11, no. 5 (2024): 450. http://dx.doi.org/10.3390/photonics11050450.

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The article presents a comparative analysis of published data for the physical parameters of the ZGP (ZnGeP2) crystal, its nonlinear and phase-matching properties, and functional capabilities for all frequency conversion processes (harmonics, sum and difference frequencies, and parametric generation). At the first time, the possibilities for obtaining the temperature-noncritical processes for some combinations of wavelengths are shown.

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Verozubova, G. A., A. Yu Trofimov, E. M. Trukhanov, et al. "Melt nonstoichiometry and defect structure of ZnGeP2 crystals." Crystallography Reports 55, no. 1 (2010): 65–70. http://dx.doi.org/10.1134/s1063774510010116.

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46

Setzler, S. D., P. G. Schunemann, T. M. Pollak, et al. "Characterization of defect-related optical absorption in ZnGeP2." Journal of Applied Physics 86, no. 12 (1999): 6677–81. http://dx.doi.org/10.1063/1.371743.

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47

Mengyan, P. W., B. B. Baker, R. L. Lichti, et al. "Hyperfine spectroscopy and characterization of muonium in ZnGeP2." Physica B: Condensed Matter 404, no. 23-24 (2009): 5121–24. http://dx.doi.org/10.1016/j.physb.2009.08.212.

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48

Titov, K. S., and V. N. Brudnyi. "Structure Defects in a Triple Semiconducting Compound ZnGeP2." Russian Physics Journal 57, no. 1 (2014): 50–54. http://dx.doi.org/10.1007/s11182-014-0206-x.

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49

Brudnyi, V. N., V. A. Novikov, and E. A. Popova. "Electrical and optical properties of electron-irradiated ZnGeP2." Soviet Physics Journal 29, no. 8 (1986): 679–86. http://dx.doi.org/10.1007/bf00894036.

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50

Apollonov, V. V., Yu A. Shakir, and A. I. Gribenyukov. "Modelling half-cycle pulse generation in ZnGeP2 crystal." Journal of Physics D: Applied Physics 35, no. 13 (2002): 1477–80. http://dx.doi.org/10.1088/0022-3727/35/13/304.

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