Thematische Bibliographien / Wz 100

Auswahl der wissenschaftlichen Literatur zum Thema „Wz 100“

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Veröffentlicht am 26. Juli 2024

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Zeitschriftenartikel zum Thema "Wz 100"

1

Wei, Zhicheng, Rongzheng Xu, Hui Li, Yanxi Hou und Xuming Guo. „Investigation on Double Wire Metal Inert Gas Welding of A7N01-T4 Aluminum Alloy in High-Speed Welding“. High Temperature Materials and Processes 38, Nr. 2019 (25.02.2019): 317–25. http://dx.doi.org/10.1515/htmp-2018-0073.

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AbstractFour-millimeter thick A7N01-T4 aluminum alloy plates were welded by double wire metal inert gas welding (DWMW) in high welding speeds, ranging from 1100 to 1250 mm/min. The results show that a sound joint could be obtained at a high speed of 1200 mm/min using DWMW. The weld zone (WZ) in the joint showed a dendritic structure of equiaxed grains, and in the fusion zone (FZ), the microstructure existed as a fine equiaxed crystal structure about 100 µm in thickness. In the WZ adjacent to the FZ, elongated columnar crystal structure distributed along to the interface, and coarse microstructure in the heat affected zone (HAZ) were found, showing a typical rolling texture. The main precipitates in the WZ were assumed to be Fe-enriched phases, and Mg- and Zn-enriched phases. Tensile fracture generally occurred in the WZ adjacent to the FZ with a decrease in ductility, and it was consistent with the results of the microstructure analysis and hardness profile. The mean ultimate tensile strength and elongation of specimens were 302 MPa and 4.5 %, respectively.
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2

Chandra, S., und V. Kumar. „Structural, electronic and elastic properties of ZnGeN2 and WZ-GaN under different hydrostatic pressures: A first-principle study“. International Journal of Modern Physics B 33, Nr. 25 (10.10.2019): 1950297. http://dx.doi.org/10.1142/s0217979219502977.

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The structural, electronic and elastic properties of orthorhombic ZnGeN2 and wurtzite (WZ)-GaN semiconductors have been studied under different pressures using first-principle density functional theory (DFT) calculations. The lattice constants (a, b and c) and energy bandgaps ([Formula: see text]) have been calculated under ambient condition. The elastic properties such as elastic stiffness constants ([Formula: see text]), shear modulus (G), bulk modulus (B), Young modulus ([Formula: see text]), B/G ratio and Poisson ratio ([Formula: see text]) have been studied at 50, 100, 110, 120, 150, 160, 180 and 190 GPa pressures for the first time as well as at 0 GPa. The calculated values of [Formula: see text] show that the ZnGeN2 and GaN are stable up to 180 and 150 GPa, respectively, and afterwards phase changes and become unstable. The band structure of ZnGeN2 reveals direct band gap behavior up to 100 GPa and becomes indirect band gap at 110 GPa. However, GaN is direct band gap up to 150 GPa and becomes indirect at 160 GPa. Comparing the results of both semiconductors, it is observed that ZnGeN2 is similar to WZ-GaN up to 100 GPa in all respect and can be used in many applications in place of WZ-GaN. The calculated values of all parameters are in reasonable agreement with the known values.
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3

Ho, Chun Yuen, Ying Wang, Chao Ping Liu und Kin Man Yu. „Controlling electrical and optical properties of wurtzite CdxZn1−xO with high Cd contents via native defects manipulation by low-temperature annealing“. Journal of Applied Physics 131, Nr. 17 (07.05.2022): 175104. http://dx.doi.org/10.1063/5.0091233.

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Bandgap energies in wurtzite (WZ) structured Cd xZn1 −xO alloys are known to decrease with increasing Cd content ( x). Our previous work demonstrated that WZ-Cd xZn1 −xO alloys with a high Cd content of x ∼ 0.6 and a low gap of 2 eV can be stabilized by oxygen interstitials when grown in an O-rich environment. However, such O-rich WZ-Cd xZn1 −xO alloys have poor electrical properties due to compensating native defects. In this work, we synthesized pure WZ phase Cd xZn1 −xO thin films with different Cd contents by magnetron sputtering in an oxygen-rich environment. Changes in structural, electrical, and optical properties of these O-rich wurtzite Cd xZn1 −xO after rapid thermal annealing were investigated. While alloys with a low Cd composition of 0.2 can maintain a pure wurtzite structure up to 500 °C, phase separation occurs at a lower annealing temperature of ∼400 °C for Cd-rich ( x = 0.6) films. Isochronal and isothermal annealing studies reveal the kinetics of native defects in these alloys. Highly mobile hydrogen interstitial donor defects, oxygen interstitials, and more stable cation vacancies outdiffuse sequentially as the annealing temperature increases from <300 to >400 °C. By exploiting the difference in the energy barrier between acceptor defects removal and phase separation, a pure wurtzite phase alloy with a low bandgap of 2 eV and decent electrical properties was realized by annealing O-rich WZ-Cd0.6Zn0.4O at 300 °C with an extended annealing duration of >100 s. These results demonstrate a practical way to obtain low-gap oxide semiconductors with strong optical absorption and controllable electrical conductivities.
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4

Hussain, Syed Iqrar, Ammad Hassan Khan, Zia ur Rehman, Wasim Abbas, Safeer Abbas, Abdeliazim Mustafa Mohamed, Dina Mohamed Fathi und Mubashir Aziz. „Effect of Weak Zones on Resilience of Sustainable Surface Course Mixtures of Fresh-Reclaimed Asphalt Pavement“. Sustainability 14, Nr. 16 (12.08.2022): 9966. http://dx.doi.org/10.3390/su14169966.

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The use of reclaimed asphalt pavement (RAP) is necessary for sustainable and cost-effective road infrastructure construction. This research investigates the effect of the area of weak zones (WZ) on the resilient modulus (MRT) of mixtures of fresh asphalt with 20% RAP. Experimentation on fresh asphalt–RAP mixtures comprising Superpave (SP-A, SP-B) and Asphalt Institute (MS-2) gradations with 20/30, 40/50, 60/70 and 80/100 penetration grade binders was carried out. WZ were determined based on the analysis of magnified digital images of asphalt specimens obtained using optical microscopy. This study demonstrates that the 20/30 grade binder caused an increase in the MRT at 25 °C up to 1.8, 2.9 and 9.2 times for a 0.1 s load duration, and 2.4, 3.0 and 9.7 times for a 0.3 s load duration. In contrast, improvement at 40 °C was observed to be up to 1.9, 3.1 and 9.7 times for a 0.1 s load duration, and 1.9, 3.0 and 12.4 times for a 0.3 s load duration in comparison with 40/50, 60/70 and 80/100 grade binders, respectively. Experimental data were validated by factorial analysis. Power trendline equations were also developed between MRT and WZ to explain the effect of gravel particle orientation on the sustainable resilience of surface course mixtures.
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5

Javaheri, Sahar, Arash Boochani, Manuchehr Babaeipour und Sirvan Naderi. „Electronic and optical properties of GaN under pressure: DFT calculations“. International Journal of Modern Physics B 31, Nr. 32 (18.12.2017): 1750261. http://dx.doi.org/10.1142/s0217979217502617.

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Optical and electronic properties of ZB, RS and WZ structures of gallium nitride (GaN) are studied in equilibrium and under pressure using the first-principles calculation in the density functional theory (DFT) framework to obtain quantities like dielectric function, loss function, reflectance and absorption spectra, refractive index and their relation parameters. The electronic properties are studied using EV-GGA and GGA approximations and the results calculated by EV-GGA approximation were found to be much closer to the experimental results. The interband electron transitions are studied using the band structure and electron transition peaks in the imaginary part of the dielectric function; these transitions occur in three structures from N-2p orbital to Ga-4s and Ga-4p orbitals in the conduction band. Different optical properties of WZ structure were calculated in two polarization directions of (100) and (001) and the results were close to each other. Plasmon energy corresponding to the main peak of the energy-loss function in RS with the value of 26 eV was the highest one, which increased under pressure. In general, RS shows more different properties than WZ and ZB.
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6

Zhang, Chun Guang. „Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition“. Materials Science Forum 971 (September 2019): 79–84. http://dx.doi.org/10.4028/www.scientific.net/msf.971.79.

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As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.
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7

PARNES, S., I. KHALAILA, G. HULATA und A. SAGI. „Sex determination in crayfish: are intersex Cherax quadricarinatus (Decapoda, Parastacidae) genetically females?“ Genetical Research 82, Nr. 2 (April 2003): 107–16. http://dx.doi.org/10.1017/s0016672303006372.

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In the Australian red-claw crayfish Cherax quadricarinatus (von Martens) (Decapoda, Parastacidae), a gonochoristic species, seven different combinations of intersex individuals (with both male and female genital openings) have been described. However, to date, the genetic basis for this phenomenon has not been investigated. This study was designed to test a simple chromosome-based sex-determination model for C. quadricarinatus that assumes the male to be the homogametic (ZZ) sex. According to our model, intersex individuals that are functionally males are genetically females (WZ). Individual crosses were performed between intersex and female crayfish, with control crosses being performed between normal males and females. The control crosses yielded, in most cases, the expected 1[ratio ]1 sex ratio in the F1 progeny. Crosses between intersex individuals and females yielded a 1[ratio ]3 (male[ratio ]female) sex ratio in most crosses. According to our hypothesis, one-third of the females produced in a cross of a female with an intersex animal should be WW females. The hypothesis was tested by crossing normal males with F1 females, which were progeny of intersex fathers. These crosses yielded almost 100% females, a finding that conforms to the above-suggested sex determination model for C. quadricarinatus and the female WZ genotype of intersex individuals.
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8

Baer, Howard, R. Michael Barnett, Manuel Drees, John F. Gunion, Howard E. Haber, Debra L. Karatas und Xerxes R. Tata. „GLUINO DECAYS TO W AND Z BOSONS AT THE SSC“. International Journal of Modern Physics A 02, Nr. 04 (August 1987): 1131–44. http://dx.doi.org/10.1142/s0217751x87000521.

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It is shown that, for a wide range of parameters, the dominant decays of gluinos with mass ≳500 GeV contain gauge bosons, W± and Z, among their decay products. The pair production of heavy gluinos at the SSC is thus characterized by events with 3–4 hard jets and pairs of gauge bosons. The cleanest signature comes from the case where both gluinos decay into Z followed by [Formula: see text] which leads to ~50–100 4-lepton + multijet events annually at the SSC. In addition, 1600 trilepton + multijet and about 6000 dilepton + multijet events may be expected from WZ and WW sources. The backgrounds to these signals are estimated to be small.
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9

Jang, HyoChang, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Wladek Walukiewicz und Tooru Tanaka. „Structural, optical, and electrical properties of WZ- and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy“. Journal of Alloys and Compounds 867 (Juni 2021): 159033. http://dx.doi.org/10.1016/j.jallcom.2021.159033.

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10

Das, Siba R., Maciej Maselko, Ambuj Upadhyay und Michael J. Smanski. „Genetic engineering of sex chromosomes for batch cultivation of non-transgenic, sex-sorted males“. PLOS Genetics 16, Nr. 11 (02.11.2020): e1009180. http://dx.doi.org/10.1371/journal.pgen.1009180.

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The field performance of Sterile Insect Technique (SIT) is improved by sex-sorting and releasing only sterile males. This can be accomplished by resource-intensive separation of males from females by morphology. Alternatively, sex-ratio biasing genetic constructs can be used to selectively remove one sex without the need for manual or automated sorting, but the resulting genetically engineered (GE) control agents would be subject to additional governmental regulation. Here we describe and demonstrate a genetic method for the batch production of non-GE males. This method could be applied to generate the heterogametic sex (XY, or WZ) in any organism with chromosomal sex determination. We observed up to 100% sex-selection with batch cultures of more than 103 individuals. Using a stringent transgene detection assay, we demonstrate the potential of mass production of transgene free males.
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Bücher zum Thema "Wz 100"

1

Freud, an introduction to his life and work. Cambridge, UK: Polity Press, 1985.

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2

Gregor Mendel: The first geneticist. New York: Oxford University Press, 1996.

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3

Le génie féminin: La vie, la folie, les mots : Hannah Arendt, Melanie Klein, Colette. Paris, France: Fayard, 1999.

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4

Dah života. Laguna, 2016.

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5

When breath becomes air. 2016.

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6

F.M.: The life of Frederick Matthias Alexander : founder of the Alexander technique. London: Little, Brown, 2004.

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Buchteile zum Thema "Wz 100"

1

Tripathy, P. R., M. Mukherjee und S. P. Pati. „Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency“. In Springer Proceedings in Physics, 1267–71. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_192.

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