Zeitschriftenartikel: „Transistors HEMT“

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Amar, Abdelhamid, Bouchaïb Radi und Hami El Abdelkhalak. „Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)“. Applied Sciences 11, Nr. 22 (13.11.2021): 10720. http://dx.doi.org/10.3390/app112210720.

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

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Mrvić, Jovan, und Vladimir Vukić. „Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors“. Zbornik radova Elektrotehnicki institut Nikola Tesla 30, Nr. 30 (2020): 93–109. http://dx.doi.org/10.5937/zeint30-29318.

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The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V. For the purpose of analysis the transistor switching characteristics, the double pulse test method was implemented. Detailed computer simulation models developed in programs of the SPICE family were used. Data on transient turn -on and turn-off processes were generated by LTspice simulation tool, in a wide range of drain currents, using two different gate resistance values for driving the transistors under test. The obtained results indicate superior switching characteristics of gallium nitride devices in comparison to silicon components, especially during the high drain current transistor operation. During the one transistor switching cycle, the total energy losses in the GaN HEMT were simulated, for a drain current of 30 A, and found to be five to eight times lower when compared to tested Si MOSFET transistor.

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Kuliev, M. V. „Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator“. Nano- i Mikrosistemnaya Tehnika 24, Nr. 1 (22.02.2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.

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In this work, we investigated the influence of the composition of the GaxAl1-xN/GaN microwave transistor heterostructure on the long-term frequency stability of microwave generators. The relationship between the parameters of the transistor structure and the characteristics of microwave generators based on HEMT transistors is determined.

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Zhelannov, Andrei V., Boris I. Seleznev und Dmitry G. Fedorov. „Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure“. Nano Hybrids and Composites 28 (Februar 2020): 149–54. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.149.

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The paper presents the route of manufacturing transistors on gallium nitride. As a result of the work done, prototypes of transistor crystals with a gate length and width of 0.5 μm and 0.8 mm, respectively. The basic static characteristics are presented.

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Соловьев, А. А. „МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF“. NANOINDUSTRY Russia 96, Nr. 3s (15.06.2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.

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Рассмотрен процесс формирования SPICE-модели HEMT-транзисторов с помощью комплекса Keysight EEsof. Определен минимальный набор параметров модели, выполнено сравнение используемых в настоящем моделей HEMT-транзисторов. The paper discusses the procedure for building SPICE models of HEMT transistors using Keysight EEsof systems. The minimum set of model parameters has been defined; the existing models of HEMT transistors have been compared.

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Sleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny und Ilya A. Zhilnikov. „Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD“. Modern Electronic Materials 6, Nr. 2 (15.07.2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.

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We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).

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Salmanogli, Ahmad. „Squeezed state generation using cryogenic InP HEMT nonlinearity“. Journal of Semiconductors 44, Nr. 5 (01.05.2023): 052901. http://dx.doi.org/10.1088/1674-4926/44/5/052901.

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Abstract This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.

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Ryndin, Eugeny A., Amgad A. Al-Saman und Boris G. Konoplev. „A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics“. Active and Passive Electronic Components 2019 (01.04.2019): 1–9. http://dx.doi.org/10.1155/2019/5135637.

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A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.

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SARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU et al. „AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS“. International Journal of High Speed Electronics and Systems 20, Nr. 03 (September 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.

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Pivotal in the design of circuits is the ability to efficiently translate available transistor gain to high gain per stage. Remarkably, for 35-nm InP HEMT transistors, the efficiency of this translation remains high even up to ~0.5 THz. The ever shrinking wavelength correlated with higher frequencies necessitates a scaling of not only the device layout, but also of the passive elements and wafer thickness. Furthermore, to avoid distributed effects, the length of transistor gate fingers must be reduced.

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Li, Zijian. „Advancements in GaN HEMT structures and applications: A comprehensive overview“. Journal of Physics: Conference Series 2786, Nr. 1 (01.06.2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.

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Abstract Compared with silicon, GaN has advantages such as high electron mobility large band gap and high breakdown field strength. Therefore, GaN High Electron Mobility Transistors (HEMT) is resistant to high voltage and high temperature, and GaN HEMT performs well in high-frequency and high-power fields. Enhancement mode GaN HEMT is more suitable for most applications than depletion mode GaN HEMT due to enhancement mode GaN HEMT’s normally-off characteristic. This paper introduces cascode structure GaN HEMT and p-GaN gate structure GaN HEMT, as well as two improved structures, monolithically integrated Si-GaN cascoded FET and Hybrid Drain embedded Gate Injection Transistor, then compares the four structures and analyzes the advantages and disadvantages. Because of the unique advantages of GaN HEMT, many industries that require the use of high-frequency devices or high-power devices are very interested in the application research of GaN HEMT. This paper mainly introduces the research progress of GaN HEMT’s application in the three fields of radio frequency amplifiers, charger circuits, and LiDAR drivers, and the paper summarizes the advantages and current challenges of GaN HEMT, as well as the future of GaN HEMT’s development and application.

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Elwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub und Yvon Cordier. „Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate“. Journal of Applied Physics 133, Nr. 14 (14.04.2023): 145705. http://dx.doi.org/10.1063/5.0147048.

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In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq.

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Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska et al. „AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts“. Micromachines 9, Nr. 11 (25.10.2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

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Pavlov, A. Yu, K. N. Tomosh, V. Yu Pavlov, D. N. Slapovskiy, A. V. Klekovkin und I. A. Ivchenko. „Electron Mobility Transistors On AlGaN/GaN Heterostructure with Recess in the Barrier Layer“. Nano- i Mikrosistemnaya Tehnika 24, Nr. 2 (21.02.2022): 103–8. http://dx.doi.org/10.17587/nmst.24.103-108.

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The influence of thickness of barrier layer nitride heterostructure on characteristics of high electron mobility transistors (HEMT). Reducing thickness of the barrier layer will increase transconductance of transistor, its operating frequencies, gain, and specific output power. In the work, change in thickness of barrier layer of heterostructure due to etching of gate recess. The developed and implemented method of low-energy defectless dry etching of the AlGaN barrier layer is used, which consists in cyclic repetition operations of plasma-chemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled plasma in chlorine-containing medium. AlGaN/AlN/GaN HEMTs with a gate recess were fabricated using the proposed etching method for the first time. It is shown that the currents of obtained transistors are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages (up to obtaining transistors operating in the enhancement mode).

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Song, Yu-Lin, Manoj Kumar Reddy, Luh-Maan Chang und Gene Sheu. „Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps“. Micromachines 12, Nr. 7 (26.06.2021): 751. http://dx.doi.org/10.3390/mi12070751.

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This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

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Hasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia und Syed K. Islam. „Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)“. International Journal of High Speed Electronics and Systems 27, Nr. 03n04 (September 2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.

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This work presents multivariate regression polynomial as a versatile and efficient method for DC modeling of modern transistors with very different underlying physics including MOSFET (metal-oxide-semiconductor field-effect transistor), MESFET (metal–semiconductor field-effect transistor), HBT (heterojunction bipolar transistor), HEMT (High-electron-mobility transistor) and a novel silicon-on-insulator four-gate transistors (G4FET). A set of available data from analytic solution, TCAD simulation, and experimental measurements for different operating conditions is used to empirically determine the parameters of this model and a different set of test data is used to verify its predictive accuracy. The developed model expresses the drain current as a single multivariate regression polynomial with its validity spanning across different possible operating regions as long as the chosen independent variables lie within the range of training data set. The continuity of the resulting polynomial and its first and second order derivatives make it particularly suitable for implementation in a circuit simulator. The model also provides a method for further simplification based on prior knowledge of the underlying physical mechanism and shows excellent predictive capability for different kinds of devices. This can be very useful for modeling deep-submicron emerging devices for which any closed-form analytical solution is not yet available.

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Đorđević, Vladica, Zlatica Marinković und Olivera Pronić-Rančić. „COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS“. Facta Universitatis, Series: Automatic Control and Robotics 16, Nr. 2 (24.10.2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.

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The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

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Musznicki, Piotr, Pawel B. Derkacz und Piotr J. Chrzan. „Wideband Modeling of DC-DC Buck Converter with GaN Transistors“. Energies 14, Nr. 15 (22.07.2021): 4430. http://dx.doi.org/10.3390/en14154430.

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The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter PCB for the analytical prediction of transistor turn-off ringing frequency and overvoltage. The practical use of the model is presented for sizing optimal capacitance of snubber.

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Arseniuk, Dmytro, und Yuri Zinkovskyi. „MINIMIZING HIGH-FREQUENCY SWITCHING LOSSES IN WIDEBAND GAN HEMTS FOR FLYBACK CONVERTERS“. Information and Telecommunication Sciences, Nr. 2 (21.12.2023): 53–60. http://dx.doi.org/10.20535/2411-2976.22023.53-60.

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Background. In the realm of pulse power supplies, flyback converters play a pivotal role in efficient voltage conversion and providing electrical isolation. Typically, these converters utilize silicon transistors. However, they encounter several issues that hinder their energy efficiency and operational stability. A primary concern is the increase in switching losses at high frequencies. This is attributed to the lower switching speed and higher on-state resistance characteristic of silicon transistors. Such inefficiency leads to substantial power dissipation, thereby reducing overall efficiency. Additionally, the heat generated from these losses necessitates complex temperature control systems, increasing operational burden and affecting the reliability and longevity of the converters. Furthermore, the operational frequency of these converters is limited. While operating at higher frequencies is beneficial for reducing the size of passive components, it exacerbates the problems of switching losses and heat dissipation in silicon transistors. Objective. This article aims to conduct a comprehensive study and optimization of flyback converters based on High Electron Mobility Transistors (HEMT) made of Gallium Nitride (GaN), focusing on minimizing losses in high-frequency switching. The study delves into the intrinsic properties of GaN HEMTs, highlighting their superior characteristics compared to traditional silicon counterparts, and emphasizes the circuit design methods for minimizing losses and their features. Method. The research involved a detailed analysis of the switching losses of GaN HEMTs under high-frequency switching conditions. Using computer simulation models, the study examines the impact of various parameters, such as currents and voltages on the GaN transistor, power dissipation, and the output characteristics of the device with different circuit topologies on the performance and efficiency of switching. Results. The results provide insights into the optimization strategies of topology, particularly the use of transistor gate drivers and snubber circuits, which are crucial for enhancing the overall efficiency and reliability of flyback converters. Conclusions. The article offers an in-depth analysis into optimizing high-frequency flyback converters using GaN HEMTs, providing valuable guidance for devices requiring compact power sources, such as in small aircraft systems and telecommunications networks.

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Gryglewski, Daniel, Wojciech Wojtasiak, Eliana Kamińska und Anna Piotrowska. „Characterization of Self-Heating Process in GaN-Based HEMTs“. Electronics 9, Nr. 8 (13.08.2020): 1305. http://dx.doi.org/10.3390/electronics9081305.

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Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

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Torina, Elena M., Victor N. Kochemasov und Ansar R. Safin. „Transistors for Solid-State Microwave Switches (A Review)“. Journal of the Russian Universities. Radioelectronics 26, Nr. 3 (06.07.2023): 6–31. http://dx.doi.org/10.32603/1993-8985-2023-26-3-6-31.

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Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state switches.Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented. Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.

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Li, Fan, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen und Wen Liu. „Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics“. Applied Sciences 11, Nr. 24 (17.12.2021): 12057. http://dx.doi.org/10.3390/app112412057.

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Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 °C to 250 °C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.

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Bouneb, I., und F. Kerrour. „Nanometric Modelisation to Characterize Dynamics Carriers in a HEMT Heterostructure (AlGaAs/GaAs) Using an Effectif Doping“. Key Engineering Materials 644 (Mai 2015): 26–30. http://dx.doi.org/10.4028/www.scientific.net/kem.644.26.

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The composing semiconductors became the support privileged of information and the communication, in particular grace to the faster development of Internet, for the systems of telecommunications to high debit, some components are necessary. It is for this reason that of the alternative structures have been proposed: the IV-IV heterostructures or III-V. The most effective components in this domain are the field effect transistors (High Electron Mobility Transistor: HEMT) on IIIV substratum. The present work is dedicated to the contribution to the development of a numeric physical model which based on the influence of the different parameters (physical and geometric) on the parameters characterizing the potential at the interface of a heterostructure in GaAsAl/GaAs. The present work also has aim to characterize dynamics carriers in a HEMT heterostructure which we will consider later a dynamic study of quantum well solar cells in a rigorous and complete manner.

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Lu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma und Yue Hao. „AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade“. Applied Physics Letters 120, Nr. 17 (25.04.2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology.

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Lu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma und Yue Hao. „AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade“. Applied Physics Letters 120, Nr. 17 (25.04.2022): 173502. http://dx.doi.org/10.1063/5.0088585.

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This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/ μm-mV. The negative differential resistance effect was found in the subthreshold region in the gate current–voltage ( Ig– VGS) curve. The hot carrier transfer mechanism that occurred in the turn-on/pinch-off progress of the CC-HEMT under the dual-directional sweep, proved by the VDS- and Lg-dependent bi-directional transfer I–V characteristics, can be responsible for these excellent device performances. This work is believed to encourage further study of the AlN/GaN platform to power the future group III-nitrides CMOS technology.

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Abolduev, I. M., N. V. Alkeev, V. S. Belyaev, E. V. Kaevitser und I. D. Kashlakov. „CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS“. Electronic engineering Series 2 Semiconductor devices 259, Nr. 4 (2020): 12–18. http://dx.doi.org/10.36845/2073-8250-2020-259-4-12-18.

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The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.

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Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry et al. „InAlN/GaN HEMTs based L-band high-power packaged amplifiers“. International Journal of Microwave and Wireless Technologies 6, Nr. 6 (25.02.2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

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This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim und Hyun-Seok Kim. „Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study“. Micromachines 11, Nr. 1 (31.12.2019): 53. http://dx.doi.org/10.3390/mi11010053.

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In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.

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Gramatikov, Pavlin. „GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION“. Journal Scientific and Applied Research 15, Nr. 1 (03.03.2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.

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Qin, Zhen-Wei, Wen-Hsuan Tsai, Wei-Chia Chen, Hao-Hsuan Lo und Yue-Ming Hsin. „I–V Characteristics of E-mode GaN-based transistors under gate floating“. Semiconductor Science and Technology 37, Nr. 4 (14.02.2022): 045002. http://dx.doi.org/10.1088/1361-6641/ac5105.

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Abstract This study investigates the I–V behaviors of various E-mode GaN-based transistors under gate floating and zero gate bias. The p-GaN gate high electron mobility transistor (HEMTs), gate injection transistors, and Cascode GaN FETs have been adopted and compared. The high off-state drain current is observed under gate floating except for Cascode GaN FETs based on the measured I–V characteristics. The off-state drain current of p-GaN gate HEMT is up to 0.8 mA under gate floating at a drain bias of 6 V, which is about 107 times larger than zero gate bias. The devices will induce false-turn-on and reverse conduction loss during switching under gate floating due to the capacitance charging effect between the drain and the gate electrodes. The mechanism of the capacitance charging effect is discussed using the equivalent circuit of p-GaN gate HEMTs and confirmed by Silvaco TCAD simulation.

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Wang, Jinye, Jun Liu und Zhenxin Zhao. „A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate“. Journal of Semiconductors 45, Nr. 5 (01.05.2024): 052302. http://dx.doi.org/10.1088/1674-4926/45/5/052302.

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Abstract An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors (HEMTs) is proposed, which considers a dual-field-plate (FP) made up of a gate-FP and a source-FP. The equivalent circuit of the overall model is composed of parasitic elements, intrinsic transistors, gate-FP, and source-FP networks. The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor. In order to simplify the complexity of the model, a series combination of a resistor and a capacitor is employed to represent the source-FP. The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit. The verification is carried out on a 4 × 250 μm GaN HEMT device with a gate-FP and a source-FP in a 0.45 μm technology. Compared with the classic model, the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz.

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Wang, Chih Hao, Liang Yu Su, Finella Lee und Jian Jang Huang. „Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices“. Applied Mechanics and Materials 764-765 (Mai 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.

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We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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Maset, Enrique, Juan Bta Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders und Ausias Garrigós. „Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications“. Energies 13, Nr. 24 (14.12.2020): 6583. http://dx.doi.org/10.3390/en13246583.

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This paper presents the possibility of using Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) instead of the conventional silicon metal oxide semiconductor field effect transistor (MOSFET) to implement a high-frequency intermediate bus converter (IBC) as part of a typical distributed power architecture used in a space power application. The results show that processing the power at greater frequencies is possible with a reduction in mass and without impacting the system efficiency. The proposed solution was experimentally validated by the implementation of a 1 MHz zero-voltage and zero-current switching (ZVZCS) current-fed half-bridge converter with synchronous rectification compared with the same converter using silicon as the standard technology on power switches and working at 100 kHz. In conclusion, the replacement of silicon (Si) transistors by GaN HEMTs is feasible, and GaN HEMTs are promising next-generation devices in the power electronics field and can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters. The best physical properties of GaN HEMTs, such as inherent radiation hardness, low on resistance and parasitic capacitances, allow them to switch at higher frequencies with high efficiency achieving higher power density. We present an optimized design procedure to guaranty the zero-voltage switching condition that enables the power density to be increased without a penalization of the efficiency.

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Недошивина, А. Д., И. В. Макарцев und С. В. Оболенский. „Модель для многопараметрического анализа параметров короткоканальных транзисторов типа НЕМТ“. Физика и техника полупроводников 56, Nr. 7 (2022): 618. http://dx.doi.org/10.21883/ftp.2022.07.52747.02.

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Михайлович, С. В., А. Ю. Павлов, К. Н. Томош und Ю. В. Федоров. „Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN“. Письма в журнал технической физики 44, Nr. 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.

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AbstractA method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl_3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.

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Yan, Dong, Lijun Hang, Yuanbin He, Zhen He und Pingliang Zeng. „An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters“. Energies 15, Nr. 8 (18.04.2022): 2966. http://dx.doi.org/10.3390/en15082966.

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The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss. As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed. The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems. In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance. The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition. The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit. Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model. Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.

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Klochkov, A. N. „InP HEMT Transistors and Monolithic Integrated Circuits: Review“. Nano- i Mikrosistemnaya Tehnika 22, Nr. 2 (24.02.2020): 79–97. http://dx.doi.org/10.17587/nmst.22.79-97.

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Wang, Ding, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma und Zetian Mi. „Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT“. Applied Physics Letters 122, Nr. 9 (27.02.2023): 090601. http://dx.doi.org/10.1063/5.0143645.

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In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces were obtained by utilizing molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range of 3.8 V, a large ON/OFF ratio of 3 × 107, and reconfigurable output characteristics depending on the poling conditions. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance, with subthreshold swing values approaching 110 and 30 mV/dec under forward and backward gate sweeps, respectively. The results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and are promising for nitride-based nonvolatile, multi-functional, reconfigurable power, and radio frequency devices as well as memory devices and negative capacitance transistors for next-generation electronics.

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Amar, Abdelhamid, Bouchaïb Radi und Abdelkhalak El Hami. „Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)“. International Journal for Simulation and Multidisciplinary Design Optimization 13 (2022): 2. http://dx.doi.org/10.1051/smdo/2021035.

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The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled. This proposed modeling by the finite element method using the Comsol multiphysics software, allowed to study the multiphysics behaviour of the transistor and to observe the different degradations in the structure of the component. Then, an optimization study is necessary to avoid failures in the transistor. In this work, we have used the Covariance Matrix Adaptation-Evolution Strategy (CMA-ES) method to solve the optimization problem, but it requires a very important computing time. Therefore, we proposed the kriging assisted CMA-ES method (KA-CMA-ES), it is an integration of the kriging metamodel in the CMA-ES method, it allows us to solve the problem of optimization and overcome the constraint of calculation time. All these methods are well detailed in this paper. The coupling of the finite element model developed on Comsol Multiphysics and the KA-CMA-ES method on Matlab software, allowed to optimize the multiphysics behaviour of the transistors. We made a comparison between the results of the numerical simulations of the initial state and the optimal state of the component. It was found that the proposed KA-CMA-ES method is efficient in solving optimization problems.

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Беляков, В. А., И. В. Макарцев, А. Г. Фефелов, С. В. Оболенский, А. П. Васильев, А. Г. Кузьменков, М. М. Кулагина und Н. А. Малеев. „Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP“. Физика и техника полупроводников 55, Nr. 10 (2021): 890. http://dx.doi.org/10.21883/ftp.2021.10.51439.38.

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High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

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Cho, Seong-Kun, und Won-Ju Cho. „High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor“. Chemosensors 9, Nr. 3 (25.02.2021): 42. http://dx.doi.org/10.3390/chemosensors9030042.

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The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) using the resistive coupling effect to overcome the Nernst limit. For resistive coupling, a coplanar gate comprising a control gate (CG) and a sensing gate (SG) was designed. We investigated the amplification of the pH sensitivity with the change in the magnitude of a resistance connected in series to each CG and SG via Silvaco TCAD simulations. In addition, a disposable extended gate was applied as a cost-effective sensor platform that helped prevent damages due to direct exposure of the AlGaN/GaN MOS HEMT to chemical solutions. The pH sensor based on the coplanar gate AlGaN/GaN MOS HEMT exhibited a pH sensitivity considerably higher than the Nernst limit, dependent on the ratio of the series resistance connected to the CG and SG, as well as excellent reliability and stability with non-ideal behavior. The pH sensor developed in this study is expected to be readily integrated with wide transmission bandwidth, high temperature, and high-power electronics as a highly sensitive biosensor platform.

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Yang, Jie, Ye Ting Jia, Ning Ye, Zhen Yu Yuan, Hong Yuan Shen und Jia Di. „An Improved I-V Model of GaN HEMT for High Temperature Applications“. Materials Science Forum 924 (Juni 2018): 980–83. http://dx.doi.org/10.4028/www.scientific.net/msf.924.980.

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The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature.

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Wang, Baochao, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye und Xuezhen Ding. „A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs“. Energies 12, Nr. 6 (25.03.2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

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Weis, Gerald. „Performance Comparison Between Surface-mount and Embedded Power Modules“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (01.01.2019): 000647–70. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp3_052.

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Increasing efficiency in power electronic circuits requires innovative cooling concepts and a low impedance connection in the power path as well as low inductance driving circuits placed as close as possible to the main power switches. A direct comparison between state-of-the-art standard surface-mount build-ups and power switches embedded directly into the printed circuit board shows the high potential of integrated electronics. Measurements at defined operating point(s) verify improved thermal performance due to more heat spreading area, as well as higher achievable switching speed. For performance benchmarking two similar versions of half bridge circuits in DC-DC buck configuration were built to be compared in measurement. The first configuration uses standard, state-of-the-art SMD packages assembled onto the module. For the second half bridge module an embedded power path was used: The power transistors (GaN HEMT devices) are mounted inside the printed circuit board (PCB) and galvanically isolated from the heat sink pad on top of the package. Both versions use exactly the same schematic, layer stack-up and copper structure on the six layers used. A slightly different laser drill configuration was necessary because embedded parts are connected by copper filled laser drill holes. This measure was taken to optimize the modules according to their technology. Each module has an NTC thermistor mounted at the same distance to the half bridge transistors, and is used to indicate the temperature of the transistor dies during measurement. To cover a wide range of operational conditions the devices under test (DUTs) were stressed under hard switching operation (HSW) as well as triangular current mode (TCM). HSW causes more stress because the opposite transistor is switched before the whole energy of Coss has been discharged. In TCM the current through the inductor is becoming negative for a short time period and discharges the Coss capacitors of the power transistors. The test conditions were set as follows: 150V, 11A with 200kHz switching frequency in HSW mode. The switching behavior is similar, because both modules uses the same power transistors. Due to less parasitic impedance at the embedded module the turn-on behavior is slightly improved at the embedded module. Embedding as a new, innovative concept is compared to standard technologies. First measurements show that the embedded DUT stays 20K below the temperature of the standard module while running at the same load current. Additionally fewer disturbances were observed at the embedded module.

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Sun, Haifeng, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter und C. R. Bolognesi. „Millimeter-wave GaN-based HEMT development at ETH-Zürich“. International Journal of Microwave and Wireless Technologies 2, Nr. 1 (Februar 2010): 33–38. http://dx.doi.org/10.1017/s1759078710000164.

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We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.

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SANO, EIICHI, und TAIICHI OTSUJI. „HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA“. International Journal of High Speed Electronics and Systems 17, Nr. 03 (September 2007): 509–20. http://dx.doi.org/10.1142/s0129156407004709.

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The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

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Maati, Wafa, und Abdelkader Hamdoune. „Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor“. Sensor Letters 18, Nr. 5 (01.05.2020): 366–70. http://dx.doi.org/10.1166/sl.2020.4226.

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In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 1016 cm–3, as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.

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Fatma M. Mahmoud. „GaN-HEMT Performance Enhancement“. Journal of Electrical Systems 20, Nr. 2 (04.04.2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.

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Tsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang und Wen-Chau Liu. „Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures“. Science of Advanced Materials 13, Nr. 2 (01.02.2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.

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In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

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Dai, Pengfei, Shaowei Wang und Hongliang Lu. „Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors“. Micromachines 15, Nr. 3 (25.02.2024): 321. http://dx.doi.org/10.3390/mi15030321.

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Guan, Wuxiao. „Advancements and trends in GaN HEMT“. Applied and Computational Engineering 23, Nr. 1 (07.11.2023): 245–51. http://dx.doi.org/10.54254/2755-2721/23/20230662.

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Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) technology has made significant advancements, revolutionizing the field of power electronics. With their unique properties such as high breakdown voltage, high frequency, and high electron mobility and high-power capabilities, GaN HEMTs offer significant advantages over traditional silicon-based devices, such as improved power density, higher operating temperature, and enhanced reliability. GaN HEMTs have shown great potential in sensing applications, such as gas and biosensors. This thesis explores the advancements and trends in GaN HEMT technology, including crystal growth technology, sensing applications, packaging technology, and performance optimization. Despite significant progress, challenges such as heat dissipation, production costs, and yield and reliability issues need to be addressed. Future research directions may focus on improving integration with other technologies, exploring potential applications in emerging fields such as 5G communication, and addressing these challenges. Overall, GaN HEMT technology has made significant advancements and is set to play a pivotal role in various industries.

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