Thematische Bibliographien / Transistors HEMT

Auswahl der wissenschaftlichen Literatur zum Thema „Transistors HEMT“

Autor: Grafiati

Veröffentlicht am 27. Juli 2024

Zuletzt aktualisiert am 29. Juli 2024

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Zeitschriftenartikel zum Thema "Transistors HEMT"

Amar, Abdelhamid, Bouchaïb Radi und Hami El Abdelkhalak. „Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)“. Applied Sciences 11, Nr. 22 (13.11.2021): 10720. http://dx.doi.org/10.3390/app112210720.

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

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Mrvić, Jovan, und Vladimir Vukić. „Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors“. Zbornik radova Elektrotehnicki institut Nikola Tesla 30, Nr. 30 (2020): 93–109. http://dx.doi.org/10.5937/zeint30-29318.

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The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V. For the purpose of analysis the transistor switching characteristics, the double pulse test method was implemented. Detailed computer simulation models developed in programs of the SPICE family were used. Data on transient turn -on and turn-off processes were generated by LTspice simulation tool, in a wide range of drain currents, using two different gate resistance values for driving the transistors under test. The obtained results indicate superior switching characteristics of gallium nitride devices in comparison to silicon components, especially during the high drain current transistor operation. During the one transistor switching cycle, the total energy losses in the GaN HEMT were simulated, for a drain current of 30 A, and found to be five to eight times lower when compared to tested Si MOSFET transistor.

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Kuliev, M. V. „Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator“. Nano- i Mikrosistemnaya Tehnika 24, Nr. 1 (22.02.2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.

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In this work, we investigated the influence of the composition of the GaxAl1-xN/GaN microwave transistor heterostructure on the long-term frequency stability of microwave generators. The relationship between the parameters of the transistor structure and the characteristics of microwave generators based on HEMT transistors is determined.

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Zhelannov, Andrei V., Boris I. Seleznev und Dmitry G. Fedorov. „Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure“. Nano Hybrids and Composites 28 (Februar 2020): 149–54. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.149.

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The paper presents the route of manufacturing transistors on gallium nitride. As a result of the work done, prototypes of transistor crystals with a gate length and width of 0.5 μm and 0.8 mm, respectively. The basic static characteristics are presented.

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Соловьев, А. А. „МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF“. NANOINDUSTRY Russia 96, Nr. 3s (15.06.2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.

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Рассмотрен процесс формирования SPICE-модели HEMT-транзисторов с помощью комплекса Keysight EEsof. Определен минимальный набор параметров модели, выполнено сравнение используемых в настоящем моделей HEMT-транзисторов. The paper discusses the procedure for building SPICE models of HEMT transistors using Keysight EEsof systems. The minimum set of model parameters has been defined; the existing models of HEMT transistors have been compared.

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Sleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny und Ilya A. Zhilnikov. „Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD“. Modern Electronic Materials 6, Nr. 2 (15.07.2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.

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We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP power. Transistor slope declines considerably with an increase in RF power: it is the greatest at minimum power RF = 1 W. In the beginning of growth even at a low RF power (3 W) the transistor structure becomes completely inoperable. Dielectric deposition for HEMT passivation should be started at minimum RF power. We have developed an AlGaN/GaN microwave HEMT passivation process providing for conformal films and low closed transistor drain–source currents without compromise in open state transistor performance: within 15 and 100 mA, respectively, for a 1.25 and 5 mm common T-gate (Ug = –8 V and Ud-s = 50 V).

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Salmanogli, Ahmad. „Squeezed state generation using cryogenic InP HEMT nonlinearity“. Journal of Semiconductors 44, Nr. 5 (01.05.2023): 052901. http://dx.doi.org/10.1088/1674-4926/44/5/052901.

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Abstract This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.

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Ryndin, Eugeny A., Amgad A. Al-Saman und Boris G. Konoplev. „A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics“. Active and Passive Electronic Components 2019 (01.04.2019): 1–9. http://dx.doi.org/10.1155/2019/5135637.

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A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.

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SARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU et al. „AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS“. International Journal of High Speed Electronics and Systems 20, Nr. 03 (September 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.

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Pivotal in the design of circuits is the ability to efficiently translate available transistor gain to high gain per stage. Remarkably, for 35-nm InP HEMT transistors, the efficiency of this translation remains high even up to ~0.5 THz. The ever shrinking wavelength correlated with higher frequencies necessitates a scaling of not only the device layout, but also of the passive elements and wafer thickness. Furthermore, to avoid distributed effects, the length of transistor gate fingers must be reduced.

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Li, Zijian. „Advancements in GaN HEMT structures and applications: A comprehensive overview“. Journal of Physics: Conference Series 2786, Nr. 1 (01.06.2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.

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Abstract Compared with silicon, GaN has advantages such as high electron mobility large band gap and high breakdown field strength. Therefore, GaN High Electron Mobility Transistors (HEMT) is resistant to high voltage and high temperature, and GaN HEMT performs well in high-frequency and high-power fields. Enhancement mode GaN HEMT is more suitable for most applications than depletion mode GaN HEMT due to enhancement mode GaN HEMT’s normally-off characteristic. This paper introduces cascode structure GaN HEMT and p-GaN gate structure GaN HEMT, as well as two improved structures, monolithically integrated Si-GaN cascoded FET and Hybrid Drain embedded Gate Injection Transistor, then compares the four structures and analyzes the advantages and disadvantages. Because of the unique advantages of GaN HEMT, many industries that require the use of high-frequency devices or high-power devices are very interested in the application research of GaN HEMT. This paper mainly introduces the research progress of GaN HEMT’s application in the three fields of radio frequency amplifiers, charger circuits, and LiDAR drivers, and the paper summarizes the advantages and current challenges of GaN HEMT, as well as the future of GaN HEMT’s development and application.

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Dissertationen zum Thema "Transistors HEMT"

Gonçalves, Cristiano Ferreira. „GaN HEMT transistors characterization for non–linear modelling“. Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/21677.

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Mestrado em Engenharia Eletrónica e Telecomunicações
Ultimamente, as redes de telecomunicações móveis estão a exigir cada vez maiores taxas de transferência de informação. Com este aumento, embora sejam usados códigos poderosos, também aumenta a largura de banda dos sinais a transmitir, bem como a sua frequência. A maior frequência de operação, bem como a procura por sistemas mais eficientes, tem exigido progressos no que toca aos transístores utilizados nos amplificadores de potência de radio frequência (RF), uma vez que estes são componentes dominantes no rendimento de uma estação base de telecomunicações. Com esta evolução, surgem novas tecnologias de transístores, como os GaN HEMT (do inglês, Gallium Nitride High Electron Mobility Transistor). Para conseguir prever e corrigir certos efeitos dispersivos que afetam estas novas tecnologias e para obter o amplificador mais eficiente para cada transístor usado, os projetistas de amplificadores necessitam cada vez mais de um modelo que reproduza fielmente o comportamento do dispositivo. Durante este trabalho foi desenvolvido um sistema capaz de efetuar medidas pulsadas e de elevada exatidão a transístores, para que estes não sejam afetados, durante as medidas, por fenómenos de sobreaquecimento ou outro tipo de fenómenos dispersivos mais complexos presentes em algumas tecnologias. Desta forma, será possível caracterizar estes transístores para um estado pré determinado não só de temperatura, mas de todos os fenómenos presentes. Ao longo do trabalho vai ser demostrado o projeto e a construção deste sistema, incluindo a parte de potência que será o principal foco do trabalho. Foi assim possível efetuar medidas pulsadas DC-IV e de parâmetros S (do inglês, Scattering) pulsados para vários pontos de polarização. Estas últimas foram conseguidas á custa da realização de um kit de calibração TRL. O interface gráfico com o sistema foi feito em Matlab, o que torna o sistema mais fácil de operar. Com as medidas resultantes pôde ser obtida uma primeira análise acerca da eficiência, ganho e potência máxima entregue pelo dispositivo. Mais tarde, com as mesmas medidas pôde ser obtido um modelo não linear completo do dispositivo, facilitando assim o projeto de amplificadores.
Lately, the wireless networks should feature higher data rates than ever. With this rise, although very powerful codification schemes are used, the bandwidth of the transmitted signals is rising, as well as the frequency. Not only caused by this rise in frequency, but also by the growing need for more efficient systems, major advances have been made in terms of Radio Frequency (RF) Transistors that are used in Power Amplifiers (PAs), which are dominant components in terms of the total efficiency of base stations (BSS). With this evolution, new technologies of transistors are being developed, such as the Gallium Nitride High Electron Mobility Transistor (GaN HEMT). In order to predict and correct some dispersive effects that affect these new technologies and obtain the best possible amplifier for each different transistor, the designers are relying more than ever in the models of the devices. During this work, one system capable of performing very precise pulsed measurements on RF transistors was developed, so that they are not affected, during the measurements, by self-heating or other dispersive phenomena that are present in some technologies. Using these measurements it was possible to characterize these transistors for a pre-determined state of the temperature and all the other phenomena. In this document, the design and assembly of the complete system will be analysed, with special attention to the higher power component. It will be possible to measure pulsed Direct Current Current-Voltage (DC-IV) behaviour and pulsed Scattering (S) parameters of the device for many different bias points. These latter ones were possible due to the development of one TRL calibration kit. The interface with the system is made using a graphical interface designed in Matlab, which makes it easier to use. With the resulting measurements, as a first step analysis, the maximum efficiency, gain and maximum delivered power of the device can be estimated. Later, with the same measurements, the complete non-linear model of the device can be obtained, allowing the designers to produce state-of-art RF PAs.

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Grémion, Emile. „Transistor balistique quantique et HEMT bas-bruit pour la cryoélectronique inférieure à 4. 2 K“. Paris 11, 2008. http://www.theses.fr/2008PA112017.

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Pour augmenter la résolution globale des détecteurs à très basse température, aujourd'hui couramment utilisés dans de nombreux champs de la physique des particules et de l'univers, les expériences à venir ne pourront faire l'économie du développement d'une cryo-électronique performante, à la fois moins bruyante et plus proche du détecteur. Dans ce contexte, ce travail s'intéresse aux possibilités offertes par les gaz d'électrons bidimensionnels (2DEG) GaAlAs/GaAs à travers l'étude expérimentale de deux composants distincts : les QPC (Quantum Point Contact) et les HEMT (High Electron Mobility Transistor). En s'appuyant sur la quantification de la conductance dans les QPC, phénomène issu de la physique mésoscopique, un transistor balistique quantique fonctionnant à 4. 2 K a été réalisé. Le transport électronique à travers les bandes 1D permet d'obtenir un gain en tension supérieur à 1 avec une puissance dissipée d'environ 1 nW. En raison de leur très faible capacité d'entrée, ces dispositifs constituent également des candidats idéaux pour multiplexer des matrices de bolomètres haute impédance (collaboration DCMB). Les HEMT présentent des performances compatibles avec une utilisation à basse température, ayant une puissance dissipée de ~ 100 μW et un gain supérieur à 20. Le faible bruit en tension équivalent en entrée (1. 2 nV/Hz^(1/2) à 1 kHz et 0. 13 nV/Hz^(1/2) à 100 kHz) ouvre la voie à leur utilisation dans la lecture de détecteur de forte impédance. Conformément à la loi de Hooge, ces performances sont obtenues au détriment d'une capacité d'entrée élevée estimée à environ 60 pF
Next generations of cryodetectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryoelectronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryoelectronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4. 2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1. 2 nV/Hz^(1/2) at 1 kHz and 0. 12 nV/Hz^(1/2) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF

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Callet, Guillaume. „Caractérisation et modélisation de transistors HEMT AlGaN/GaN et InAlN/GaN pour l’amplification de puissance en radio-fréquences“. Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/3c0fde17-3720-49cd-9824-bd071826245e/blobholder:0/2011LIMO4033.pdf.

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Ce document traite de la caractérisation de composants HEMT à base de GaN en vue de leur modélisation. Une caractérisation exhaustive des transistors à base d’InalN/GaN et AlGaN/GaN est réalisée. Une importance particulière est donnée aux méthodes de caractérisation thermique, avec l’utilisation de la méthode 3ω pour la mesure de l’impédance thermique. Une étude des facteur d’échelle du modèle linéaire est également abordée. Le modèle non-linéaire présenté est développé afin d’élargir son champ d’application à l’amplification de puissance et à la commutation. Enfin, il est utilisé pour la réalisation du premier amplificateur de puissance utilisant la technologie InAlN en bande Ka
This report deals with the characterization of GaN HEMTs devices in order to create their model. An exhaustive characterization has been realized for AlInN/GaN and AlGaN/GAN based HEMTs. A special care has been given to the different thermal characterization methods, with the use of the 3ω method for the measurement of the thermal impedance. A study of scaling rules for small-signal model is presented. The non-linear model presented is developed in order to extend his application domain to the power amplification and power switches. Finally it is used in the design of the first poser amplifier base on AlInN technology in Ka-band

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Yu, Tsung-Hsing. „Numerical studies of heterojunction transport and High Electron Mobility Transistor (HEMT) devices“. Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/13035.

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Chen, Lu. „Computerized evaluation of parameters for HEMT DC and microwave S parameter models“. Ohio : Ohio University, 1995. http://www.ohiolink.edu/etd/view.cgi?ohiou1179518920.

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Greco, Giuseppe. „AlGaN/GaN heterostructures for enhancement mode transistors“. Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.

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Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the main task of modern power electronics. In this context, wide band semiconductors (WBG), such as gallium nitride (GaN) and related alloys, have outstanding physical properties that can enable to overcome the limitations of Silicon, in terms of operating power, frequency and temperature of the devices. An interesting aspects related to GaN materials is the possibility to grow AlGaN/GaN heterostructures, in which a two dimensional electron gas (2DEG) is formed at the heterojunction. Basing on the presence of the 2DEG, AlGaN/GaN heterostructures are particularly interesting for the fabrication of high electron mobility transistors (HEMTs). One of the most challenging aspects on this field is the development of enhancement mode AlGan/GaN HEMT. This devices would offer a simplified circuitry, in combination with favourable operating conditions for device safety. Hence, this thesis is entitled AlGaN/GaN heterostructures for enhancement mode transistors . The aim of this work was to clarify the mechanisms ruling the electronic transport at some relevant interfaces in AlGaN/GaN devices, after surface modification processes used in normally-off technologies. The thesis is divided in 6 chapters. In the first two chapters, the properties of GaN and related AlGaN alloys are described, explaining the formation of the 2DEG and the working principle of HEMT devices. In chapter 3, a nanoscale characterization of modified AlGaN surfaces is presented in order to deplete the 2DEG. Two different approaches have been studied, i.e., the use of a fluorine plasma treatment and the use of a local oxidation process. Even though a depletion of the 2DEG is possible, several reliability concerns need to be investigated before a practical application to devices can be envisaged. Among the possible approaches for enhancement mode transistors using AlGaN/GaN heterostructures, the use of a p-GaN gate contact seems to be the most interesting one. Hence, chapter 4 reports a detailed investigation on the formation of Ohmic contact to p-GaN. The evolution of a Au/Ni bilayer, annealed at different temperatures and in two different atmospheres (Ar or N2/O2) was considered. The electrical measurements of the contacts annealed under different conditions demonstrated a reduction of the specific contact resistance in oxidizing atmosphere. Structural characterizations of the metal layer associated with nanoscale electrical measurements, allowed to give a possible scenario on the Ohmic contact formation mechanisms. Finally, the temperature dependence of the specific contact resistance allowed the extraction of the metal/p-GaN barrier. The fabrication and characterization of AlGaN/GaN transistors with the use of a p-GaN cap layer under the gate contact is presented in chapter 5. The electrical characterization of p-GaN/AlGaN/GaN transistors demonstrated a significant positive shift of the threshold voltage (Vth) with respect to devices without p-GaN gate. A normally-off behaviour of the devices (Vth= +1.4 V) was obtained upon a reduction of the barrier layer thickness and Al concentration. Finally, a preliminary study on the use of nickel oxide (NiO) as a dielectric below the Schottky gate contact in AlGaN/GaN heterostructures is reported in the last chapter. First, a structural and morphological investigation of the NiO layers grown by MOCVD showed continuous epitaxial film. The electrical measurements on devices allowed to extract a value of the dielectric constant for the grown NiO very close to the theoretical one, and a reduction of the leakage current in HEMT structures integrating such a dielectric. The experimental results of this thesis are summarized in the conclusive section, that also briefly describes the remaining open issues and the possible continuation of this research activity.

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Sadek-Hage, Chehade Sawsan. „Microcapteurs hybrides et monolithiques en technologies MESFETet HEMT : applications cinémométriques“. Lille 1, 1996. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1996/50376-1996-133.pdf.

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Les applications des microondes dans le domaine grand public, sont actuellement en pleine expansion particulièrement dans les transports terrestres. L'électronique automobile est un grand espace qui offre un champ d'opportunités et un marché potentiel. La voiture du futur sera équipée d'un ensemble de capteurs intelligents, permettant une conduite plus automatisée et plus sure. Notre objectif consiste à développer une source microonde en bande k d'un capteur sans contact utilisant l'effet doppler pour accéder à la vitesse des automobiles. Cette source est composée d'un oscillateur et d'un amplificateur. Elle doit être de faible cout, fiable et facile à intégrer. Nous avons donc réalise une étude comparative entre la technologie hybride à base de mesfets, les technologies monolithiques à base de mesfets et à base de hemts. Une source hybride a 24 ghz a donc été réalisée utilisant un mesfet ec1840 de thomson composants microondes. Nous avons aussi entrepris la conception et la réalisation de 2 mmics (1 oscillateur et 1 amplificateur) au laboratoire central de l'iemn a base de mesfets utilisant un procède de gravure sèche. D'autre part, 2 mmics ont été réalisés avec la filière d02ah a base de hemts de la fonderie philips microwave limeil dans le cadre d'un projet multiutilisateurs. Chacune des sources réalisées a été testée et caractérisée sur banc de simulation routier. Ces mesures ont été très concluantes et permettent d'envisager l'intégration totale du capteur doppler en bande k. Ainsi, nous avons montré qu'il est possible de réaliser à moindre cout, en faisant appel à des technologies bien connues (mesfet et hemt), des systèmes intègres complexes en bande k.

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Kim, Hyeong Nam. „Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors“. The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.

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Divay, Alexis. „Etude de la fiabilité à long terme des transistors HEMT à base de GaN“. Rouen, 2015. http://www.theses.fr/2015ROUES054.

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Les performances des HEMTs AlGaN/GaN sont en passe de devenir une technologie de référence pour les applications de forte puissance dans le domaine radiofréquence. Cependant, le manque de retour d'expérience sur la fiabilité de ces dispositifs se fait ressentir chez les industriels des domaines de la défense, de l'automobile et des télécommunications à cause de la jeunesse de cette filière. Cette étude se porte donc sur la fiabilité à long terme de transistors HEMT AlGaN/GaN de puissance en régime RADAR. Elle repose notamment sur des caractérisations électriques des composants, le développement d'une méthode athermique de caractérisation de pièges ainsi que le stress de ces transistors sur un banc de vieillissement dédié. La somme des caractérisations avant, pendant et après vieillissement ainsi que les analyses micro-structurales permet de définir des hypothèses quant à l'origine physique des dérives de performances de ces composants
AlGaN/GaN HEMTs are on their way to become a reference technology for high power and high frequency applications. However, the lack of feedback regarding the reliability of such devices can be felt by the defense, automotive and telecommunications industrialists because of its lack of maturity. This study deals with the long term reliability of power AlGaN/GaN HEMTs in RADAR operating mode. It is based upon electrical characterizations, the development of an athermal measurement technique for traps and RF stresses on an ageing bench. The sum of all the characterizations before, during and after the ageing tests as well as micro-structural analyses allows to define hypotheses regarding the physical origin of the performance drift of such components

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Fonder, Jean baptiste. „Analyse des mécanismes de défaillance dans les transistors de puissance radiofréquences HEMT AlGaN/GaN“. Phd thesis, Université de Cergy Pontoise, 2012. http://tel.archives-ouvertes.fr/tel-00765251.

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Les HEMT AlGaN/GaN sont en passe de devenir incontournables dans le monde de l'amplification de puissance radiofréquence, grâce à leurs performances exceptionnelles. Cependant,en raison de la relative jeunesse de cette technologie, des études de fiabilité dans plusieurs modes de fonctionnement sont toujours nécessaires pour comprendre les mécanismes de défaillance propres à ces composants et responsables de leur vieillissement. Cette étude porte sur l'analyse des défaillances dans les transistors HEMT AlGaN/GaN de puissance,en régime de fonctionnement de type RADAR (pulsé et saturé). Elle s'appuie sur la conception d'amplificateurs de test, leur caractérisation et leur épreuve sur bancs de vieillissement. La mise en place d'une méthodologie visant à discriminer les mécanismes de dégradation prépondérants, conjointement à une analyse micro-structurale des composants vieillis, permet d'établir le lien entre l'évolution des performances électriques et l'origine physique de ces défauts.

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Bücher zum Thema "Transistors HEMT"

Lee, Ross R., Svensson Stefan P und Lugli P. 1956-, Hrsg. Pseudomorphic HEMT technology and applications. Dordrecht: Kluwer Academic, 1996.

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Q, Lee Richard, und United States. National Aeronautics and Space Administration., Hrsg. Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna. [Washington, D.C.]: National Aeronautics and Space Administration, 1991.

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Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.

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Duran, Halit C. High performance InP-based HEMTs with dry etched gate recess. Konstanz: Hartung-Gorre Verlag, 1998.

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Anholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.

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Ladbrooke, Peter H. MMIC design: GaAs FETS and HEMTs. Boston: Artech House, 1989.

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Ju, Y. Sungtaek. Microscale Heat Conduction in Integrated Circuits and Their Constituent Films. Boston, MA: Springer US, 1999.

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Ju, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.

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Ju, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.

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International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.

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Verma, Yogesh Kumar, Varun Mishra, Lucky Agarwal, Laxman Singh und Santosh Kumar Gupta. „Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review“. In HEMT Technology and Applications, 53–69. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_4.

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Trew, R. J. „Field-Effect Transistor Models and Microwave Cad“. In Pseudomorphic HEMT Technology and Applications, 125–40. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1630-2_6.

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Biswas, Kalyan, Rachita Ghoshhajra und Angsuman Sarkar. „High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis“. In HEMT Technology and Applications, 155–79. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_12.

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Hayashi, Tetsuya, Yoshio Shimoida, Hideaki Tanaka, Shigeharu Yamagami, Satoshi Tanimoto und Masakatsu Hoshi. „Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)“. In Silicon Carbide and Related Materials 2005, 1453–56. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1453.

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Banerjee, Amal. „Heterogeneous Junction Field Effect Devices—Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT)“. In Synthesis Lectures on Engineering, Science, and Technology, 81–90. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-45750-0_6.

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Tran, Nhu Q., Loc T. P. Nguyen, Tri M. Do und Quan M. Hoang. „Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)“. In Intelligent Computing & Optimization, 1078–85. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-19958-5_101.

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Neda und Vandana Nath. „Comparative Analysis of Machine Learning Algorithms for High Electron Mobility Transistor (HEMT) Modeling“. In Advancement of Intelligent Computational Methods and Technologies, 103–8. London: CRC Press, 2024. http://dx.doi.org/10.1201/9781003487906-20.

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Belkhiria, Maissa, Fraj Echouchene und Nejeh Jaba. „Nano-heat Transfer in GAAFET Transistor Using Single-Phase-Lag Model“. In Lecture Notes in Mechanical Engineering, 114–22. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-84958-0_12.

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Raghuveera, E., G. Purnachandra Rao und Trupti Ranjan Lenka. „Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications“. In Lecture Notes in Electrical Engineering, 123–37. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4495-8_9.

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Chatterjee, Neel, und Sujata Pandey. „Multiphysics Analysis of Heat Transfer in Gate All Around (GAA) Silicon Nanowire Transistor: Material Perspective“. In Springer Proceedings in Physics, 49–55. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_6.

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Konferenzberichte zum Thema "Transistors HEMT"

Rendek, K., A. Satka, J. Kovac und D. Donoval. „Noise in the InAlN/GaN HEMT transistors“. In Microsystems (ASDAM). IEEE, 2010. http://dx.doi.org/10.1109/asdam.2010.5666349.

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Leong, Kevin, Gerry Mei, Vesna Radisic, Stephen Sarkozy und William Deal. „THz integrated circuits using InP HEMT transistors“. In 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM). IEEE, 2012. http://dx.doi.org/10.1109/iciprm.2012.6403302.

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Sergentanis, Grigorios, Yales Rômulo De Novaes, Liliana De Lillo, Lee Empringham und Mark C. Johnson. „Dynamic Characterization of 650V GaN HEMT Transistors“. In 2023 IEEE 8th Southern Power Electronics Conference (SPEC). IEEE, 2023. http://dx.doi.org/10.1109/spec56436.2023.10407647.

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Seung Hyun Park, Hong-Hyun Park, M. Salmani-Jelodar, S. Steiger, M. Povolotsky, T. Kubis und G. Klimeck. „Contact modeling and analysis of InAs HEMT transistors“. In 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC 2011). IEEE, 2011. http://dx.doi.org/10.1109/nmdc.2011.6155381.

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Nasri, Faouzi, Haikel Mzoughi, Husien Salama und Khalifa Ahmed Salama. „Numerical Analysis of Self-Heating Effect in HEMT Transistors“. In 2023 International Conference on Electrical, Communication and Computer Engineering (ICECCE). IEEE, 2023. http://dx.doi.org/10.1109/icecce61019.2023.10442598.

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Pala, Vipindas, Mona Hella und T. Paul Chow. „Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors“. In IC's (ISPSD). IEEE, 2011. http://dx.doi.org/10.1109/ispsd.2011.5890836.

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Nandha Kumar, S., und B. Bindu. „Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)“. In 2012 International Conference on Devices, Circuits and Systems (ICDCS 2012). IEEE, 2012. http://dx.doi.org/10.1109/icdcsyst.2012.6188770.

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Schwierz, Frank. „The frequency limits of field-effect transistors: MOSFET vs. HEMT“. In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734822.

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Chaibi, M., T. Fernandez, J. R. Tellez, A. Tazon und M. Aghoutane. „Modelling of temperature and dispersion effects in MESFET and HEMT transistors“. In 2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC). IEEE, 2008. http://dx.doi.org/10.1109/inmmic.2008.4745745.

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Amgad, Al-Saman A., Yi Pei, Eugeny A. Ryndin und Fujiang Lin. „Maximum Channel Temperature Estimation for GaN HEMT transistors with n-fingers“. In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA). IEEE, 2021. http://dx.doi.org/10.1109/icta53157.2021.9661984.

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Berichte der Organisationen zum Thema "Transistors HEMT"

Roberts, Adam T., und Henry O. Everitt. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, März 2015. http://dx.doi.org/10.21236/ada614121.

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Joshi, Ravindra P. Monte Carlo Transport Studies of GaN High Electron Mobility Transistors (HEMTs) for Microwave Applications. Fort Belvoir, VA: Defense Technical Information Center, März 2004. http://dx.doi.org/10.21236/ada421515.

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Heller, Eric R., Donald Dorsey, Jason P. Jones, Samuel Graham, Matthew R. Rosenberger, William P. King und Rama Vetury. Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint). Fort Belvoir, VA: Defense Technical Information Center, Februar 2014. http://dx.doi.org/10.21236/ada614007.

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Shah, Pankaj B., und Joe X. Qiu. Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization. Fort Belvoir, VA: Defense Technical Information Center, Dezember 2011. http://dx.doi.org/10.21236/ada554911.

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Tompkins, Randy P., und Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, Februar 2015. http://dx.doi.org/10.21236/ada618164.

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Huebschman, Benjamin, und Pankaj B. Shah. A Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, März 2011. http://dx.doi.org/10.21236/ada539647.

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Nochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan und Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, Oktober 2012. http://dx.doi.org/10.21236/ada570599.

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