Thematische Bibliographien / Transistor amplifier in C class

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Auswahl der wissenschaftlichen Literatur zum Thema „Transistor amplifier in C class“

Autor: Grafiati

Veröffentlicht am 28. Juni 2021

Zuletzt aktualisiert am 29. Juli 2025

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Zeitschriftenartikel zum Thema "Transistor amplifier in C class"

S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a

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Choi, Hojong. "Class-C Linearized Amplifier for Portable Ultrasound Instruments." Sensors 19, no. 4 (2019): 898. http://dx.doi.org/10.3390/s19040898.

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Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitud

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Choi, Hojong. "Class-C Pulsed Power Amplifier with Voltage Divider Integrated with High-Voltage Transistor and Switching Diodes for Handheld Ultrasound Instruments." Energies 15, no. 21 (2022): 7836. http://dx.doi.org/10.3390/en15217836.

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A novel Class-C pulsed power amplifier with a voltage divider integrated with a high-voltage transistor and switching diodes is proposed to reduce DC power consumption and increase the maximum output power for handheld ultrasound instruments. Ultrasonic transducers in ultrasound instruments are devices that convert electrical power into acoustic power or vice versa, which are triggered by power amplifiers. Efficient power conversion is also very important to avoid thermal issues in handheld ultrasound instruments owing to limited battery power and excessive heat generation caused by the enclos

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Petrzela, Jiri. "Generalized Single Stage Class C Amplifier: Analysis from the Viewpoint of Chaotic Behavior." Applied Sciences 10, no. 15 (2020): 5025. http://dx.doi.org/10.3390/app10155025.

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This paper briefly describes a recent discovery that occurred during the study of the simplest mathematical model of a class C amplifier with a bipolar transistor. It is proved both numerically and experimentally that chaos can be observed in this simple network structure under three conditions: (1) the transistor is considered non-unilateral, (2) bias point provides cubic polynomial feedforward and feedback transconductance, and (3) the LC tank has very high resonant frequency. Moreover, chaos is generated by an autonomous class C amplifier; i.e., an isolated system without a driving force is

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Petrzela, Jiri. "New Chaotic Oscillator Derived from Class C Single Transistor-Based Amplifier." Mathematical Problems in Engineering 2020 (November 11, 2020): 1–18. http://dx.doi.org/10.1155/2020/2640629.

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This paper describes a new autonomous deterministic chaotic dynamical system having a single unstable saddle-spiral fixed point. A mathematical model originates in the fundamental structure of the class C amplifier. Evolution of robust strange attractors is conditioned by a bilateral nature of bipolar transistor with local polynomial or piecewise linear feedforward transconductance and high frequency of operation. Numerical analysis is supported by experimental verification and both results prove that chaos is neither a numerical artifact nor a long transient behaviour. Also, good accordance b

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Choi, Hojong. "Development of a Class-C Power Amplifier with Diode Expander Architecture for Point-of-Care Ultrasound Systems." Micromachines 10, no. 10 (2019): 697. http://dx.doi.org/10.3390/mi10100697.

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Point-of-care ultrasound systems are widely used in ambulances and emergency rooms. However, the excessive heat generated from ultrasound transmitters has an impact on the implementation of piezoelectric transducer elements and on battery consumption, thereby affecting the system’s sensitivity and resolution. Non-linear power amplifiers, such as class-C amplifiers, could substitute linear power amplifiers, such as class-A amplifiers, which are currently used in point-of-care ultrasound systems. However, class-C power amplifiers generate less output power, resulting in a reduction of system sen

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Petrzela, Jiri. "Evidence of Strange Attractors in Class C Amplifier with Single Bipolar Transistor: Polynomial and Piecewise-Linear Case." Entropy 23, no. 2 (2021): 175. http://dx.doi.org/10.3390/e23020175.

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This paper presents and briefly discusses recent observations of dynamics associated with isolated generalized bipolar transistor cells. A mathematical model of this simple system is considered on the highest level of abstraction such that it comprises many different network topologies. The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. A necessary but not sufficient condition for the evolution of autonomous complex behavior is the nonlinear bilateral nature of the transistor with arbitrary reason that causes this ef

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Modzelewski, Juliusz, та Katarzyna Kulma. "An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers". Archives of Electrical Engineering 61, № 2 (2012): 221–37. http://dx.doi.org/10.2478/v10171-012-0019-x.

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An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers In the paper an improved method of calculation of the inductance and capacitances in the π1 circuit for Class A, AB, B, and C resonant power amplifiers is presented. This method is based on an assumption that the quality factor of the inductor is finite and the capacitors are lossless. The input parameters for calculations are the amplifier load resistance, the transistor load resistance, the quality factor of the inductor, the loaded quality factor of the designed circuit, and the operat

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Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are perfor

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Dissertationen zum Thema "Transistor amplifier in C class"

Rujzl, Miroslav. "Analýza a obvodové realizace speciálních chaotických systémů." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442418.

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This master‘s thesis deals with analysis of electronic dynamical systems exhibiting chaotic solution. In introduction, some basic concepts for better understanding of dynamical systems are explained. After introduction, current knowledge from the world of circuits exhibiting chaotic solutions are discussed. The best-known chaotic systems are analyzed numerically in Matlab software. Numerical analysis and experimental verification were demonstrated at C class transistor amplifier, which confirmed the chaotic behavior and generation of a strange attractor.

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Ayad, Mohammed. "Etude et Conception d’amplificateurs DOHERTY GaN en technologie Quasi - MMIC en bande C." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0027.

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Ce travail répond à un besoin industriel accru en termes d’amplification des signaux sur porteuses à enveloppes variables utilisés par les systèmes de télécommunications actuels. Ces signaux disposent d’un fort PAPR et d’une distribution statistique d’enveloppe centrée en-deçà de la valeur crête d’enveloppe. La raison pour laquelle les industriels télécoms requièrent alors des amplificateurs de très fortes puissances de sortie, robustes, fiables et ayant une dépense énergétique optimale le long de la dynamique d’enveloppe associée à un niveau de linéarité acceptable. Ce document expose les rés

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Sajedin, M., Issa T. Elfergani, J. Rodriguez, et al. "Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks." RadioEngineering, 2020. http://hdl.handle.net/10454/18495.

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yes<br>This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The

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LaCaille, Greg. "A Constant Conduction Angle Biased RF Power Amplifier for Improved Linearization in Class C Operation." DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/342.

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Class C power amplifiers offer higher efficiency than class B power amplifiers, but suffer from poor linearity. A feedback based biasing system to improve the linearity of a class C power amplifier is designed. A class B amplifier with a gain of 20 dB and 20 MHz bandwidth at 900 MHz acts as the launching point for the design. The biasing and output network of the class B power amplifier is modified to produce a class C amplifier at conduction angles of 180°, 162°, 126°, 90°, and 54°. A feedback based biasing system, which uses two matched and scaled down transistors, compares the DC current of

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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Hussaini, Abubakar Sadiq. "Energy efficient radio frequency system design for mobile WiMax applications : modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations." Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5749.

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In today's digital world, information and communication technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part of the so called 'future internet' paradigm. In addition, the mobile handset industry is tightly coupled to the consumer need for more sophisticated handsets with greater battery lifetime. If we cannot make any significant step to reducing the ener

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Hussaini, Abubakar S. "Energy efficient radio frequency system design for mobile WiMax applications. Modelling, optimisation and measurement of radio frequency power amplifier covering WiMax bandwidth based on the combination of class AB, class B, and C operations." Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5749.

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In today´s digital world, information and communication technology accounts for 3% and 2% of the global power consumption and CO2 emissions respectively. This alarming figure is on an upward trend, as future telecommunications systems and handsets will become even more power hungry since new services with higher bandwidth requirements emerge as part of the so called ¿future internet¿ paradigm. In addition, the mobile handset industry is tightly coupled to the consumer need for more sophisticated handsets with greater battery lifetime.

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Giry, Alexandre. "Étude des potentialités des technologies CMOS avancées pour les radiofréquences : application aux amplificateurs de puissance." Grenoble INPG, 2001. http://www.theses.fr/2001INPG0057.

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Pecen, Vojtěch. "Výkonové zesilovače v pevné fázi pro pásmo L." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316425.

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The goal of this diploma's thesis is to create a design of a two stages amplifier working in a band reserved for the secondary surveillance radar at the frequency of 1090 MHz. Output power of the amplifier should be 20 W and efficiency should be as high as possible. Because of this the second stage is designed in class C. Contents of this diploma's thesis include a theoretical analysis, simulations of the amplifier parameters, comparison of the Ansys Designer and AWR Microwave Office simulation programs and design of both stages of the amplifier, followed by a comparison of the measured parame

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Rashid, S. M. Shahriar. "Design and Heterogeneous Integration of Single and Dual Band Pulse Modulated Class E RF Power Amplifiers." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543505207173487.

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Bücher zum Thema "Transistor amplifier in C class"

J, Nahra J., and United States. National Aeronautics and Space Administration., eds. C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO □substrate. National Aeronautics and Space Administration, 1992.

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J, Nahra J., and United States. National Aeronautics and Space Administration., eds. C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO substrate. National Aeronautics and Space Administration, 1992.

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C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO substrate. National Aeronautics and Space Administration, 1992.

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C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO ́substrate. National Aeronautics and Space Administration, 1992.

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Buchteile zum Thema "Transistor amplifier in C class"

Buono, Robert N. "L-C Demodulation Filters." In Class-D Audio Power Amplifier Design. Focal Press, 2025. https://doi.org/10.4324/9781003327943-9.

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Khimicheva, Ganna, and Oleksii Dziuba. "BACKGROUND FOR DEVELOPING THE PARAMETER CONTROL SYSTEM OF THE COMFORT ZONE OF OFFICE PREMISES." In Development of scientific, technological and innovation space in Ukraine and EU countries. Publishing House “Baltija Publishing”, 2021. http://dx.doi.org/10.30525/978-9934-26-151-0-35.

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The results of the research related to the selection and justification of the parameters of office space comfort zones and sensors for their control have been presented. The parameters that determine the comfort zone of the premises have been divided into two groups. The first group includes microclimate parameters (temperature, humidity, and air quality). The second group includes the parameters due to the equipment operation (radiation, lighting, dust, atmospheric pressure, noise). It has been shown that the level of comfort depends on the class of office space. For classes A and B, the micr

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Konferenzberichte zum Thema "Transistor amplifier in C class"

Wu, Bin, Ming Zha, Jinbo Zhao, and Cheng Luo. "Research on Loran-C Transmitting System Technology Based on Class-D Power Amplifier." In 2024 IEEE China International Youth Conference on Electrical Engineering (CIYCEE). IEEE, 2024. https://doi.org/10.1109/ciycee63099.2024.10846740.

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Hayat, K., F. A. Mughal, A. Kahif, and S. Azam. "Performance Evaluation of C-Band Class-AB Power Amplifier by Implementing Novel Sequencing Topology." In 2024 21st International Bhurban Conference on Applied Sciences and Technology (IBCAST). IEEE, 2024. https://doi.org/10.1109/ibcast61650.2024.10877047.

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Zargham, Saba, Ameya Datta, and Antonio Liscidini. "A 2.4-GHz 1.2-dBm 8PSK TX Based on a Class-C Injection-Locked Power Amplifier." In 2024 IEEE European Solid-State Electronics Research Conference (ESSERC). IEEE, 2024. http://dx.doi.org/10.1109/esserc62670.2024.10719448.

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Rujzl, Miroslav. "Model Of Chaotic Single Stage Transistor Amplifier In Class C." In STUDENT EEICT 2021. Fakulta elektrotechniky a komunikacnich technologii VUT v Brne, 2021. http://dx.doi.org/10.13164/eeict.2021.53.

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Montaseri, Mohammad Hassan, Janne Aikio, Timo Rahkonen, and Aarno Parssinen. "Design of Stacked-MOS Transistor mm-Wave Class C Amplifiers for Doherty Power Amplifiers." In 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). IEEE, 2018. http://dx.doi.org/10.1109/norchip.2018.8573519.

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Samal, Lopamudra, K. K. Mahapatra, and K. Raghuramaiah. "Class-C power amplifier design for GSM application." In 2012 International Conference on Computing, Communication and Applications (ICCCA). IEEE, 2012. http://dx.doi.org/10.1109/iccca.2012.6179216.

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Rassohina, J. V., and V. G. Krizhanovsky. "Power characteristics of the class E amplifier on the bipolar transistor." In 2000 10th International Crimean Microwave Conference. Microwave and Telecommunication Technology. Conference Proceedings. IEEE, 2000. http://dx.doi.org/10.1109/crmico.2000.1255876.

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Mediano, Arturo, and Nathan O. Sokal. "Class-E RF power amplifier with a flat-top transistor-voltage waveform." In 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012. IEEE, 2012. http://dx.doi.org/10.1109/mwsym.2012.6259441.

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Collins, Gayle F., and John Wood. "Class-E power amplifier design at 2.5 GHz using a packaged transistor." In 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). IEEE, 2013. http://dx.doi.org/10.1109/pawr.2013.6490198.

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Ng-Molina, F. Y., T. M. Martin-Guerrero, C. Camacho-Penalosa, J. A. Garcia, and J. Mata-Contreras. "GaN transistor-based Class E power amplifier for the low L-band." In 2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC). IEEE, 2011. http://dx.doi.org/10.1109/inmmic.2011.5773342.

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