Dissertationen zum Thema „Tin-oxygen“
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Agbede, Oluseye Omotoso. „Study of oxygen dissolution in molten tin : a novel SOFC anode“. Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24757.
Der volle Inhalt der QuelleRajan, Ziba Shabir Hussein Somjee. „Iridium oxide supported on antimony-doped tin oxide as an electrocatalyst for the oxygen evolution reaction“. Master's thesis, University of Cape Town, 2020. http://hdl.handle.net/11427/32528.
Der volle Inhalt der QuelleStevenson, Paul. „Nuclear structure calculations using many-body perturbation theory with a separable interaction“. Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312333.
Der volle Inhalt der QuelleAnand, Manoj. „Study of tin oxide for hydrogen gas sensor applications“. [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001003.
Der volle Inhalt der QuelleCognard, Gwenn. „Electrocatalyseurs à base d’oxydes métalliques poreux pour pile à combustible à membrane échangeuse de protons“. Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAI007.
Der volle Inhalt der QuelleConventional electrocatalysts used in proton exchange membrane fuel cells (PEMFC) are composed of platinum nanoparticles supported on high specific surface area carbon blacks. At the cathode side of the PEMFC, where the oxygen reduction reaction (ORR) occurs, the electrochemical potential can reach high values - especially during startup-shutdown operating conditions - resulting in irreversible degradation of the carbon support. A “material” solution consists of replacing the carbon with supports based on metal oxides. The latter have to be resistant to electrochemical corrosion, be electronic conductor and have a porous and nano-architectural structure (for the transport of reagents and products and the homogeneous distribution of the ionomer and platinum nanoparticles).In this work, we have developed and characterized electrocatalysts composed of platinum (Pt) nanoparticles based on tin dioxide (SnO2) and titanium dioxide (TiO2) with optimized textural (aerogel, nanofibres or loosetubes morphologies) and electron-conduction properties (doped with niobium Nb or antimony Sb). The best electrocatalytic properties are reached for an antimony-doped SnO2 aerogel support, denoted ATO. The Pt/ATO electrocatalyst has especially a higher specific activity for the ORR than a Pt/carbon Vulcan® electrocatalyst, synthesized in the same conditions, suggesting beneficial interactions between the Pt nanoparticles and the metal oxide support (Strong Metal Support Interactions SMSI).Durability tests simulating automotive operating conditions of a PEMFC were carried out in liquid electrolyte at 57 °C on these two electrocatalysts by cycling between 0.60 and 1.00 V vs the reversible hydrogen electrode (RHE) or between 1.00 and 1.50 V vs RHE. The Pt/ATO electrocatalyst has an increased stability compared to the reference Pt/carbon Vulcan® electrocatalyst. However, new degradation mechanisms were highlighted in this study: first, the doping element (Sb) is progressively dissolved during electrochemical ageing, which implies a loss of electronic conductivity. This loss is partly due to incursions at low potential, including during electrochemical characterizations. Moreover, between 5,000 and 10,000 cycles of the accelerated stress tests (between 0.60 and 1.00 V vs RHE or between 1.00 and 1.50 V vs RHE at 57 °C), the support loses its porous structure and forms a poorly conductive amorphous film
Sundqvist, Jonas. „Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides“. Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3450.
Der volle Inhalt der QuelleSaveleva, Viktoriia. „Investigation of the anodes of PEM water electrolyzers by operando synchrotron-based photoemission spectroscopy“. Thesis, Strasbourg, 2018. http://www.theses.fr/2018STRAF002/document.
Der volle Inhalt der QuelleDevelopment of oxygen evolution reaction (OER) catalysts for proton exchange membrane water electrolysis technology depends on the understanding of the OER mechanism. This thesis is devoted to the application of near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and near edge X-ray absorption fine structure (NEXAFS) techniques for operando investigation of the Ir, Ru - based anodes. For Ru-based systems, we observe the potential-induced irreversible transition of Ru (IV) from an anhydrous to a hydrated form, while the former is stabilized in the presence of Ir. Regarding single Ir-based anodes, the analysis of O K edge spectra reveals formation of electrophilic oxygen OI- as an OER intermediate. Higher stability of Ir catalysts supported on antimony-doped tin oxide (ATO) is related to their lower oxidation. This work demonstrates different OER mechanisms on Ir, Ru-based anodes involving anion and cation red-ox chemistry, correspondingly, regardless the oxide nature
YIN, CHIEN-REN JOE. „OXIDATIVE DEHYDROGENATION OF BUTENES OVER TIN-PHOSPHORUS-OXYGEN AND LITHIUM-TIN-PHOSPHORUS - OXYGEN CATALYSTS“. Thesis, 1987. http://hdl.handle.net/1911/16117.
Der volle Inhalt der QuelleHuang, Chyi-Chyuan, und 黃麒銓. „Effects of Predeposited Ti or TiN and Oxygen Content on the Structure and Properties of TiN in the Metallization of ULSI“. Thesis, 1998. http://ndltd.ncl.edu.tw/handle/68940632903697294219.
Der volle Inhalt der Quelle國立交通大學
材料科學與工程研究所
86
This study investigated the effect of predeposited Ti or TiN on TiN structure and properties. The relationship was investigated betweeen oxygen content and TiN properties and structure by changing oxygen flow. The TiN film has the 〈111〉 highly preferred orientation when the sputtering conditions are set at uncollimated sputtering, low sputtering power, and low substrate temperature. And it has a lower film resistivity when the sputtering conditions are set at collimated sputtering, high sputtering power, and high substrate temperature. TiN film will grow along 〈111〉 when one Ti underlayer with 〈0002〉preferred orientation was predeposited. Finally, one novel "2-step TiN deposition process" was successfully developed to grow the TiN film with a high deposition rate, low resistivity (58.23u Ω-cm), 〈111〉 highly preferred orientation, and high bottom step coverage by predepositing one underlayer (about 100A∼200A) as a seed layer. It is one novel and excellent process which can be applied to sub-quatrer micron metallization. The TiN film would tend to be amorphous, and the increase resistivity and leakage current increased with oxygen content.
Tsai, Cho-Jen, und 程書彥. „Measurement of Ti ability to absorbing oxygen and TiN stress relaxation by substrate curvature“. Thesis, 2006. http://ndltd.ncl.edu.tw/handle/49517097537619254011.
Der volle Inhalt der Quelle國立清華大學
材料科學工程學系
94
Abstract Ti/SiO2/Si, TiN/Si and TiN/Ti/SiO2/Si structures were annealed in vacuum to observe the ability of Ti absorbing oxygen and the stress relaxation of TiN layer. The stress of the film was determined in situ by measuring the curvature of the sample during the annealing process. The phases and the microstructure of the film after annealing process were identified using XRD, AES, and TEM. A clear correlation was between the evolution of stress and the absorption of oxygen atoms by the Ti film. From the XRD data, we can find that the (002) peak of Ti shifts to low angle at 280oC~400oC in the Ti/SiO2/Si system. It is due to the oxygen-induced Ti lattice expansion. The content of oxygen increases as the annealing temperatures and time increase, and this process let the stress become more compressive. The experiment finds that the content of oxygen can be monitored by in-situ curvature measurement. Moreover, diffusivity and the activation energy of oxygen in Ti film can be extracted. The stress relaxation of TiN is due to grain growth proved by Dark Field TEM and XRD intensity. The starting temperatures for the stress relaxation are different between TiN/Si and TiN/Ti/SiO2 system because of different TiN textures in these two systems.
Shih-Ying, Yu, und 游詩穎. „A study of surface-treated indium tin oxides thin films using oxygen and nitrogen plasmas“. Thesis, 2002. http://ndltd.ncl.edu.tw/handle/24932086201487122412.
Der volle Inhalt der QuelleLin, Chien-Hsueh, und 林建斈. „Study on Ethanol Gas Sensor Based on Tin Dioxide Thin Film by Oxygen Plasma Treatment“. Thesis, 2019. http://ndltd.ncl.edu.tw/handle/65d927.
Der volle Inhalt der Quelle國立交通大學
電子研究所
107
In this study, a novel material ethanol gas sensor was developed, which uses tin dioxide as a sensing layer to make a resistive gas sensor, and uses lithography process technology to transfer to the interdigitated electrode in the mask, by measuring the current signal as an indicator of the gas response of the sensor, a gas sensor capable of detecting ethanol gas in a general environment is successfully produced with Dual E-Gun Evaporation System and used to realize the process of growing tin dioxide by physical vapor deposition (PVD) and the process of oxygen plasma treatment by atomic layer chemical vapor deposition system, due to the technology of thin film deposition or the technology of the end plasma treatment, etc., causes the surface roughness of the material and to be different from the hydrophilicity of the gas molecules. By changing the time of the oxygen plasma treatment, it is inferred from the literature that the oxygen plasma is treated with the gas of tin dioxide. Sensing mechanisms play an important role and are supported by the relationship between material analysis and electrical measurements. In this study, the optimal processing time was found by oxygen plasma treatment. The tin dioxide gas sensor by oxygen plasma treatment has good sensing performance and has a wide range of applications in life.
Liu, Mei-Jeng, und 劉玫諍. „Study on the effect of oxygen incorporation on amorphous Indium Zinc Tin Oxide transparent thin film transistors“. Thesis, 2013. http://ndltd.ncl.edu.tw/handle/09864654442092719876.
Der volle Inhalt der Quelle國立交通大學
光電系統研究所
102
Recently, the thin film transistors (TFTs) with transparent amorphous conductive thin film as active layer perform higher mobility and better reliability than conventional hydrogenated amorphous silicon TFT (a-Si: H TFT). In addition, the uniformity of a-IGZO TFT is also superior to low temperature polycrystalline silicon TFT (LTPS TFT). However, the usage of the rare element(Ga) and further enhancement of device mobility will be an important issue for the long-term applications. In this work, we developed new amorphous oxide semiconductor--- amorphous In-Zn-Sn-O thin film transistors (a-IZTO TFTs). We investigated the effect of oxygen incorporation on a-IZTO thin film transistors. For the devices with different oxygen flow rate incorporation, the small quantity of oxygen can repair defects and optimize the characteristic, however, the trap states increase when oxygen flow rate increases, leading to the decreasing mobility. Moreover, the mobility of the optimized devices after annealing has reached 15 cm2/V.s~ 20cm2/V.s. For the application of flat panel displays, we have successfully transferred the optimized device from Si wafer to the ultra thin glass (0.13mm) which has bending potential. Devices on ultra thin glasses have stable basic electrical characteristics and their mobilities were also comparable (12~13 cm2/V.s). With the advantages of high mobility and ultra thin glass, these results show the future application potentials of a-IZTO TFT devices on flat panel display technology.
Chang, Yao-Feng, und 張耀峰. „The Role of Oxygen Vacancies and Phase Change in TiN/SiO2/PtFe Resistance nonvolatile Random Access Memories“. Thesis, 2009. http://ndltd.ncl.edu.tw/handle/54011021411886228424.
Der volle Inhalt der Quelle國立交通大學
電子工程系所
97
Recently, since nonvolatile memories acquire a lot of attention and flash memories are facing with the scale limit issue, the next generation nonvolatile memory has been carried out to discover extensively. The resistive random access memories (ReRAMs) that have the strengths of high cell density array, high operation speed, low power consumption, high endurance, lower scale limit and non-destructive readout, are one of the most potential candidate for flash memories. In this thesis, a physical model and mechanism which is about the role of oxygen vacancies and phase change in TiN/SiO2/PtFe resistance nonvolatile random access memories is proposed. This study can be categorized into three parts, different structures, different thermal treatments and small size devices, all of these electrical results can support the model and mechanism. In the first part, replacing metal electrode materials and SiO2 thickness with different structures was found the results which the effective resistance switching region is at interface region, and Fe element plays an important role to cause resistance switching behavior. In the second part, with different thermal treatments to examine the resistance switching characteristics, was discovered that amount of Fe2O3 and oxygen vacancies would affect endurance reliability and electric characteristics. In the third part, using small size cells to examine the resistance switching characteristics was found the results which are similar with the electric faucet theory and the proposed model. Moreover, a possible model about electric faucet is proposed by physical and mathematical methods. Further investigation, including interfacial electric faucet structure and electrode effects, would help to achieve a better understanding.
Tong, Jia Zen, und 董佳仁. „Effect of Interfacial Oxygen on Adhesion Strength Between Al/Cr and Indium-Tin-Oxide(ITO) Thin Film Coated Glass“. Thesis, 2001. http://ndltd.ncl.edu.tw/handle/24581200417342159594.
Der volle Inhalt der Quelle義守大學
材料科學與工程學系
89
Metallization of oxide surfaces using aluminum(Al)or gold(Au)is a key process in the fabrication or packaging of electronic and optoelectronic devices. Since these metal thin films provide the electrical and mechanical connection, the adhesion between metal thin films and oxide layer is one of the main concerns in the processing. Higher adhesion strength of metal thin film to oxide surface normally leads to high mechanical reliability of devices. Al thin film with Cr interlayer has been used as a composite layer to metallize ITO-coated glass. The top Al layer provides bondability and electrical conductivity, while the Cr layer is inserted to provide adhesion strength . From a previous study, it is well known that the adhesion between Al/Cr and ITO glass needs to be increased in order to sustain some thermal and mechanical tests. In order to enhance the adhesion between the Al/Cr and ITO glass, oxygen interface doping at the Cr - ITO interface has been proposed in this study. Various deposition parameters(bias, oxygen flow rate)have been used to determine the optimal condition for thin film deposition. From the results of compressive stress and crystalline size, they indicate the optimal bias voltages are in the range of —40 to —80V. The maximum improvement in adhesion strength can be obtained as the oxygen flow rate at 6 sccm. The structure and morphology of this change can be studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).
Wu, Tai-hsuan, und 吳岱軒. „Impacts of Oxygen Plasma Induced Interfacial Layer on P-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack“. Thesis, 2016. http://ndltd.ncl.edu.tw/handle/98877031270239718359.
Der volle Inhalt der Quelle國立中山大學
電機工程學系研究所
104
With the development of integrated circuits, the transistors dimension has been scaling. In order to maintain the electrical behavior of transistors, miniature engineering faced many challenges. For example, reduced of gate control ability and increased of subthreshold swing. There are many ways to keep the transistors performance. One of the option is using high dielectric constant material instead of the traditional gate oxide layer. In the thesis, LTPS-TFTs are fabricated with Hafnia oxide gate dielectric and the impact of oxygen plasma induced interfacial layer on electrical behavior of P-type Poly-Si thin film transistors were investigated. First discuss the electrical behavior at room temperature. The transistors with oxygen plasma have less dangling bonds and more strain bonds, leading to smaller subthreshold swing and lower transconductance. The oxygen plasma will grow plasma-induced interfacial layer, it contains negative fix oxide charges, resulting in smaller threshold voltage. To study the effect of reliability, it was divided into negative bias stress, negative bias temperature instability and temperature effects. In the experiment, the traditional transistors have serious degradation in subthreshold swing. Since the dangling bonds generated on the surface of channel. The transistors with oxygen plasma occurred hole injection in HfO2, producing positive fix oxide charges.
CHEN, YI-FAN, und 陳逸凡. „Dependence of Oxygen Concentration and Substrate Moving Speed on Electrical,Optical and Microstructure Properties of Room Temperature Grown Indium Tin Oxide Films“. Thesis, 2013. http://ndltd.ncl.edu.tw/handle/11376307284143956627.
Der volle Inhalt der Quelle崑山科技大學
電機工程研究所
101
Indium tin oxide (ITO) films were grown by in-line DC sputtering with unheated substrate. The oxygen concentration and substrate moving speed was varied during sputtering. The result indicate ITO films grown at 1.3% oxygen concentration can reach the lowest electrical resistivity 3.6×10-4 Ω-cm among these of the varied oxygen contraction test. In addition , the lowest electrical resistivity and high mobility of ITO films among test of varied substrate moving speed corresponds to low substrate moving speed. It may be related with formed during sputtering. Low substrate moving speed cause low interface stress.
Ji, Jing, und 季婧. „Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack“. Thesis, 2016. http://ndltd.ncl.edu.tw/handle/91222248664474587001.
Der volle Inhalt der Quelle國立中山大學
電機工程學系研究所
104
The application of polysilicon thin-film transistors in active matrix liquid crystal displays has been the main driver of the development of polysilicon thin-film transistors technology. The conventional poly-Si TFTs with SiO2 gate dielectric has been scaling down to meet the requirements of high performance, but hard to achieve this goal. Using high-κ materials as gate dielectric layer can improve gate capacitance density and induce more carriers to enhance the device characteristics. Among the high-κ materials, HfO2 is a promising alternative to be the gate dielectric. On the other side, there could be defects in the grain boundary of poly-Si channel film, which would capture carriers to form potential barrier and affect device performance. Oxygen plasma surface treatment is capable of passivating these defects and improving the gate dielectric/poly-Si interface quality. In this paper, impacts of oxygen plasma surface treatment on performance and reliability of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack have been researched: To study the impact of oxygen plasma surface treatment on performance of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack, measurements of the transfer characteristics and output characteristics have been performed on HfO2 poly-Si N-type TFTs of various channel length without and with O2 plasma surface treatment at room temperature. Enhancement of device performance has been observed through all the channel length of 20μm, 10μm, 5μm, 2μm and 1μm with O2 plasma surface treatment. To study the impact of oxygen plasma surface treatment on reliability of n-type poly-Si thin-film transistors with TiN/HfO2 gate stack, measurements of the transfer characteristics and output characteristics have been performed on HfO2 poly-Si N-type TFTs of W/L = 100m/10m without and with O2 plasma surface treatment at the temperature of 125℃, the PBTI stress condition being set as VOC = VG-VTH = 5V, 6V, 7V. The PBTI degradation characteristics have been observed, while the O2 plasma surface treatment has reduced the degradation and enhanced the device reliability.
„The Investigation and Characterization of Redox Enzymes Using Protein Film Electrochemistry“. Doctoral diss., 2014. http://hdl.handle.net/2286/R.I.26871.
Der volle Inhalt der QuelleDissertation/Thesis
Doctoral Dissertation Biochemistry 2014
Anju, V. G. „Electrocatalysis using Ceramic Nitride and Oxide Nanostructures“. Thesis, 2016. http://etd.iisc.ac.in/handle/2005/2919.
Der volle Inhalt der QuelleAnju, V. G. „Electrocatalysis using Ceramic Nitride and Oxide Nanostructures“. Thesis, 2016. http://etd.iisc.ernet.in/handle/2005/2919.
Der volle Inhalt der QuelleHoheisel, Martin. „Oxygen and CO on the Pt3Sn(111) and Pt3Sn(110) surfaces“. Doctoral thesis, 2002. https://repositorium.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2002111520.
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