Zeitschriftenartikel: „Switchable thin films“

1

Greenberg, Charles B. „Optically switchable thin films: a review“. Thin Solid Films 251, Nr. 2 (November 1994): 81–93. http://dx.doi.org/10.1016/0040-6090(94)90668-8.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Ding, Ying, Xing Xu, Amar Bhalla, Xiubo Yang, Jianghua Chen und Chonglin Chen. „Switchable diode effect in BaZrO3 thin films“. RSC Advances 6, Nr. 65 (2016): 60074–79. http://dx.doi.org/10.1039/c6ra05668g.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Grimes, C. A., P. L. Trouilloud und Li Chun. „Switchable lossy/non-lossy permalloy thin films“. IEEE Transactions on Magnetics 33, Nr. 5 (1997): 3996–98. http://dx.doi.org/10.1109/20.619641.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Han, Hyeon, Donghoon Kim, Sangmin Chae, Jucheol Park, Sang Yeol Nam, Mingi Choi, Kijung Yong, Hyo Jung Kim, Junwoo Son und Hyun Myung Jang. „Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films“. Nanoscale 10, Nr. 27 (2018): 13261–69. http://dx.doi.org/10.1039/c7nr08666k.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Sousanis, Andreas, Dirk Poelman, Christophe Detavernier und Philippe F. Smet. „Switchable Piezoresistive SmS Thin Films on Large Area“. Sensors 19, Nr. 20 (11.10.2019): 4390. http://dx.doi.org/10.3390/s19204390.

Der volle Inhalt der Quelle

Annotation:

Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H2S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 °C, while above 500 °C, Sm2O2S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Calhoun, Seth, Rachel Evans, Cameron Nickle, Isaiah O. Oladeji, Justin Cleary, Evan M. Smith, Sayan Chandra, Debashis Chanda und Robert E. Peale. „Vanadium Oxide Thin Film by Aqueous Spray Deposition“. MRS Advances 3, Nr. 45-46 (2018): 2777–82. http://dx.doi.org/10.1557/adv.2018.512.

Der volle Inhalt der Quelle

Annotation:

ABSTRACTVanadium Oxide has application to infrared bolometers due to high temperature coefficient of resistivity (TCR). It has attracted interest for switchable plasmonic devices due to its metal to insulator transition near room temperature. We report here the properties of vanadium oxide deposited by an aqueous spray process. The films have a ropy surface morphology with ∼70 nm surface roughness. The polycrystalline phase depends on annealing conditions. The films have TCR of ∼2%/deg, which compares well with sputtered films. Only weak evidence is found for an insulator-metal phase transition in these films.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Suchaneck, Gunnar, O. Volkonskiy, Gerald Gerlach, Zdenek Hubička, A. Dejneka, Lubomir Jastrabik, D. Kiselev, I. Bdikin und Andréi L. Kholkin. „Piezoelectric PZT Thin Films on Flexible Copper-Coated Polymer Films“. Materials Science Forum 636-637 (Januar 2010): 392–97. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.392.

Der volle Inhalt der Quelle

Annotation:

This work analyzes the processing of Pb(Zr,Ti)O3 (PZT) thin films directly on copper-coated polymer films. PZT thin film deposition was performed onto the metallized Kapton® films using a single RF plasma jet. In order to reduce the interaction of PZT and Cu during the initial growth stage, an ultrathin amorphous TiO2-x seeding layer was sputter-deposited prior to PZT deposition. The film texture was a mixture of (111)-oriented perovskite nanocrystals, rutile and pyrochlore. Topography and piezoelectric in-plane and out-of-plane response of the films were evaluated using a commercial AFM adapted for piezoforce measurements. The as-deposited films were self-polarized with polarization pointing at the surface of the sample. Polarization was switchable and a piezoelectric hysteresis was obtained.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Bao, Shanhu, Yasusei Yamada, Kazuki Tajima, Ping Jin, Masahisa Okada und Kazuki Yoshimura. „Switchable mirror based on Mg–Zr–H thin films“. Journal of Alloys and Compounds 513 (Februar 2012): 495–98. http://dx.doi.org/10.1016/j.jallcom.2011.10.098.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Richardson, Thomas J. „Phase transitions in non-hydride switchable mirror thin films“. Phase Transitions 81, Nr. 7-8 (Juli 2008): 807–13. http://dx.doi.org/10.1080/01411590801911406.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Baldi, A., D. M. Borsa, H. Schreuders, J. H. Rector, T. Atmakidis, M. Bakker, H. A. Zondag, W. G. J. van Helden, B. Dam und R. Griessen. „Mg–Ti–H thin films as switchable solar absorbers“. International Journal of Hydrogen Energy 33, Nr. 12 (Juni 2008): 3188–92. http://dx.doi.org/10.1016/j.ijhydene.2008.01.026.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

11

Cao, Guan Ying, Fang Fang, Ai Ling Zou, Jing Hui Zhang, Xiao Yang He, Ying Ming Gao und Nian Yu Zou. „Hydrogen Induced Modifications of Optical and Electric Properties in Mg Thin Films“. Advanced Materials Research 690-693 (Mai 2013): 1690–93. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.1690.

Der volle Inhalt der Quelle

Annotation:

A series of Mg thin films with different thickness from 10 nm to 200 nm were prepared and hydrogenated. The transmission spectrum and sheet resistance before and after hydrogenation were measured. The transmission increased from nearly zero to 16 %, the maximal changes happened at 561 nm was 17.6% with 50 nm thickness of Mg thin film, and its sheet resistance increased from 2.3 to 75.2Ω/. The results show that the Mg thin films changed obviously from shiny, metallic films to transparent, insulating films. The attractive phenomenon might enlighten the investigation and be of particular interest for switchable mirrors.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

12

Poh, Chung Kiak, Chung How Poh, Zai Ping Guo und Hua Kun Liu. „Characterization of Pd Nano-Thin Films for High-Speed Switchable Mirrors“. Materials Science Forum 700 (September 2011): 166–69. http://dx.doi.org/10.4028/www.scientific.net/msf.700.166.

Der volle Inhalt der Quelle

Annotation:

We fabricated Pd thin films from 2 to 35 nm thick via thermal evaporation, and a hermetically sealed hydrogen optical cell was used to characterize the films for properties such as hydrogen fractional ratio, optical switching contrast (Weber contrast), and response and recovery times. An atomic force microscope with a high resolution scanning tip was used to study the evolution of the film morphology.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

13

Bao, Shanhu, Kazuki Tajima, Yasusei Yamada, Masahisa Okada und Kazuki Yoshimura. „Polytetrafluoroethylene (PTFE) Top-Covered Mg-Ni Switchable Mirror Thin Films“. MATERIALS TRANSACTIONS 49, Nr. 8 (2008): 1919–21. http://dx.doi.org/10.2320/matertrans.mrp2008117.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

14

Marks, Zefram D., David Glugla, Jacob T. Friedlein, Sean E. Shaheen, Robert R. McLeod, Malik Y. Kahook und Devatha P. Nair. „Switchable diffractive optics using patterned PEDOT:PSS based electrochromic thin-films“. Organic Electronics 37 (Oktober 2016): 271–79. http://dx.doi.org/10.1016/j.orgel.2016.07.004.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

15

Oliva-Ramírez, Manuel, Victor J. Rico, Jorge Gil-Rostra, Oriol Arteaga, Enric Bertran, Rosalía Serna, Agustín R. González-Elipe und Francisco Yubero. „Liquid switchable radial polarization converters made of sculptured thin films“. Applied Surface Science 475 (Mai 2019): 230–36. http://dx.doi.org/10.1016/j.apsusc.2018.12.200.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

16

Bao, S., K. Tajima, Y. Yamada, M. Okada und K. Yoshimura. „Color-neutral switchable mirrors based on magnesium-titanium thin films“. Applied Physics A 87, Nr. 4 (04.04.2007): 621–24. http://dx.doi.org/10.1007/s00339-007-3991-z.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

17

Zhang, Linxing, Jun Chen, Jiangli Cao, Dongyu He und Xianran Xing. „Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO3-based thin films by chemical solution deposition“. Journal of Materials Chemistry C 3, Nr. 18 (2015): 4706–12. http://dx.doi.org/10.1039/c5tc00814j.

Der volle Inhalt der Quelle

Annotation:

The ferroelectric doped BiFeO₃thin films exhibit large resistive switching (with ON/OFF ratios ∼10⁴) and stably switchable photovoltaic response with good retention properties, providing multiple selections for non-destructive ferroelectric memory diveces.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

18

Al-Bataineh, Qais M., A. A. Ahmad, A. M. Alsaad, I. A. Qattan, Ihsan A. Aljarrah und Ahmad D. Telfah. „Effect of Iodine Filler on Photoisomerization Kinetics of Photo-Switchable Thin Films Based on PEO-BDK-MR“. Polymers 13, Nr. 5 (09.03.2021): 841. http://dx.doi.org/10.3390/polym13050841.

Der volle Inhalt der Quelle

Annotation:

We report the effect of an iodine filler on photoisomerization kinetics of photo-switchable PEO-BDK-MR thin films. The kinetics of photoisomerization and time progression of PEO-BDK-MR/I2 nanocomposite thin films are investigated using UV-Vis, FTIR spectroscopies, and modified mathematical models developed using new analytical methods. Incorporating iodine filler into the PEO-BDK-MR polymeric matrix enhances the isomerization energy barrier and considerably increases the processing time. Our outcomes propose that enhanced photoisomerized and time processed (PEO-BDK-MR)/I2 thin films could be potential candidates for a variety of applications involving molecular solar thermal energy storage media.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

19

Luo, Ya-Yuan, Zhi-Xu Zhang, Chan-Yuan Su, Wan-Ying Zhang, Ping-Ping Shi, Qiong Ye und Da-Wei Fu. „Tunable optoelectronic response multifunctional materials: exploring switching and photoluminescence integrated in flexible thin films/crystals“. Journal of Materials Chemistry C 8, Nr. 21 (2020): 7089–95. http://dx.doi.org/10.1039/d0tc00266f.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

20

Heo, Seungyang, Daseob Yoon, Sangbae Yu, Junwoo Son und Hyun Myung Jang. „Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3“. Journal of Materials Chemistry C 5, Nr. 45 (2017): 11763–68. http://dx.doi.org/10.1039/c7tc03730a.

Der volle Inhalt der Quelle

Annotation:

Complex oxide heterostructures composed of oxide semiconductor thin films and ferroelectric single crystals have attracted substantial interest due to the electrically switchable channel resistance by the polarization reversal of ferroelectrics.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

21

Fang, Liang, Lu You, Yang Zhou, Peng Ren, Zhi Shiuh Lim und Junling Wang. „Switchable photovoltaic response from polarization modulated interfaces in BiFeO3 thin films“. Applied Physics Letters 104, Nr. 14 (07.04.2014): 142903. http://dx.doi.org/10.1063/1.4870972.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

22

BAO, Shanhu, Yasusei YAMADA, Masahisa OKADA und Kazuki YOSHIMURA. „Electrochromic Properties of Pd-capped Mg-Ni Switchable Mirror Thin Films“. Electrochemistry 76, Nr. 4 (2008): 282–87. http://dx.doi.org/10.5796/electrochemistry.76.282.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

23

Case, F. C. „A novel deposition technique for switchable vanadium sesquioxide (V2O3) thin films“. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, Nr. 3 (Mai 1991): 461–65. http://dx.doi.org/10.1116/1.577389.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

24

Song, H. J., J. B. Wang, X. L. Zhong, J. J. Cheng, L. H. Jia, F. Wang und B. Li. „Switchable diode effect in polycrystalline Bi3.15Nd0.85Ti3O12 thin films for resistive memories“. Applied Physics Letters 103, Nr. 26 (23.12.2013): 262901. http://dx.doi.org/10.1063/1.4855555.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

25

Xinen Zhu, V. Lee, J. Phillips und A. Mortazawi. „An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films“. IEEE Microwave and Wireless Components Letters 19, Nr. 6 (Juni 2009): 359–61. http://dx.doi.org/10.1109/lmwc.2009.2020013.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

26

Fan, Zhen, Wei Ji, Tao Li, Juanxiu Xiao, Ping Yang, Khuong Phuong Ong, Kaiyang Zeng, Kui Yao und John Wang. „Enhanced photovoltaic effects and switchable conduction behavior in BiFe0.6Sc0.4O3 thin films“. Acta Materialia 88 (April 2015): 83–90. http://dx.doi.org/10.1016/j.actamat.2015.01.021.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

27

Wang, Ding, Ping Wang, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma und Zetian Mi. „Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy“. Applied Physics Letters 122, Nr. 5 (30.01.2023): 052101. http://dx.doi.org/10.1063/5.0136265.

Der volle Inhalt der Quelle

Annotation:

We report on the thickness scaling behavior of ferroelectric Sc0.3Al0.7N (ScAlN) films grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed in ScAlN films with thicknesses ranging from 100 to 5 nm. An increase in coercive field and a significant diminution of remnant polarization are found when the ferroelectric layer is scaled down to below 20 nm. Notably, a switching voltage of 2–3.8 V and saturated remnant polarization of ∼23 μC/cm2 are measured in 5 nm thick ScAlN. X-ray diffractions and transmission electron microscopy studies indicate that the increase in coercive field and diminishment in switchable polarization can be closely linked to the surface oxidation and strain state in ultrathin ScAlN films. This work sheds light on the fundamental thickness scaling fingerprints of ScAlN thin films and represents an important step for next-generation compact and power-efficient devices and applications based on nitride ferroelectrics.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

28

Cho, K. W., N. K. Kim, S. H. Oh, E. S. Choi, H. J. Sun, S. J. Yeom, K. N. Lee et al. „Ferroelectric Properties of Lead-Free (Bi,La)₄Ti₃O₁₂ Thin Film Deposited on MTP Cell Structure for High Density FeRAM Device“. Materials Science Forum 486-487 (Juni 2005): 285–88. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.285.

Der volle Inhalt der Quelle

Annotation:

Ferroelectric properties of Pb-free (Bi,La)4Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12, which was analyzed by ICP-MS method. The switchable polarization obtained in a 100nm-thick BLT film was about 20 uC/cm2 at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1×1011 cycles. The imprint properties of the BLT film were also characterized at 25 °C and 90 °C operating temperature after 125 °C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

29

Rani, Komalika, Sylvia Matzen, Stéphane Gable, Thomas Maroutian, Guillaume Agnus und Philippe Lecoeur. „Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films“. Journal of Physics: Condensed Matter 34, Nr. 10 (23.12.2021): 104003. http://dx.doi.org/10.1088/1361-648x/ac3f67.

Der volle Inhalt der Quelle

Annotation:

Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100% switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr, Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

30

Alguerá, M., M. L. Calzada, L. Pardo und E. Snoeck. „Combined effect of grain size and tensile stresses on the ferroelectric properties of sol-gel (Pb,La)TiO3 thin films“. Journal of Materials Research 14, Nr. 12 (Dezember 1999): 4570–80. http://dx.doi.org/10.1557/jmr.1999.0619.

Der volle Inhalt der Quelle

Annotation:

Transmission electron microscopy has shown that the grain size of sol-gel-prepared lanthanum-modified lead titanate films increases from ∼100 to ∼1 μm when the excess of PbO in the precursor solution is reduced from 20 to 10 mol%. Switchable polarization is higher in the films with a smaller grain size. Profilometry and the temperature dependence of the dielectric permittivity indicate that films are tensile stressed by the substrate. The grain-size effect on polarization switching is explainedby taking into account this tensile stress, which is thought to induce some a-domain orientation and 90° domain wall clamping in the grains attached to the substrate.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

31

Bhoje Gowd, E., Bhanu Nandan, Mukesh Kumar Vyas, Nadja C. Bigall, Alexander Eychmüller, Heike Schlörb und Manfred Stamm. „Highly ordered palladium nanodots and nanowires from switchable block copolymer thin films“. Nanotechnology 20, Nr. 41 (18.09.2009): 415302. http://dx.doi.org/10.1088/0957-4484/20/41/415302.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

32

Wang, Can, Kui-juan Jin, Zhong-tang Xu, Le Wang, Chen Ge, Hui-bin Lu, Hai-zhong Guo, Meng He und Guo-zhen Yang. „Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films“. Applied Physics Letters 98, Nr. 19 (09.05.2011): 192901. http://dx.doi.org/10.1063/1.3589814.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

33

Yamada, Y., S. Bao, K. Tajima, M. Okada und K. Yoshimura. „Optical properties of switchable mirrors based on magnesium-calcium alloy thin films“. Applied Physics Letters 94, Nr. 19 (11.05.2009): 191910. http://dx.doi.org/10.1063/1.3138130.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

34

Katiyar, Rajesh K., Yogesh Sharma, Pankaj Misra, Venkata S. Puli, Satyaprakash Sahoo, Ashok Kumar, James F. Scott, Gerardo Morell, Brad R. Weiner und Ram S. Katiyar. „Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films“. Applied Physics Letters 105, Nr. 17 (27.10.2014): 172904. http://dx.doi.org/10.1063/1.4900755.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

35

Caputo, Gianvito, Roberto Cingolani, Pantaleo Davide Cozzoli und Athanassia Athanassiou. „Wettability conversion of colloidal TiO2 nanocrystal thin films with UV-switchable hydrophilicity“. Physical Chemistry Chemical Physics 11, Nr. 19 (2009): 3692. http://dx.doi.org/10.1039/b823331d.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

36

Dam, B., A. C. Lokhorst, A. Remhof, M. C. R. Heijna, J. H. Rector, D. Borsa und J. W. J. Kerssemakers. „In situ preparation of YH2 thin films by PLD for switchable devices“. Journal of Alloys and Compounds 356-357 (August 2003): 526–29. http://dx.doi.org/10.1016/s0925-8388(03)00117-8.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

37

Han, Hyeon, Seungwoo Song, June Ho Lee, Kun Joong Kim, Guan-Woo Kim, Taiho Park und Hyun Myung Jang. „Switchable Photovoltaic Effects in Hexagonal Manganite Thin Films Having Narrow Band Gaps“. Chemistry of Materials 27, Nr. 21 (30.10.2015): 7425–32. http://dx.doi.org/10.1021/acs.chemmater.5b03408.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

38

Bao, Shanhu, Yasusei Yamada, Kazuki Tajima, Masahisa Okada und Kazuki Yoshimura. „Gasochromic Properties of Mg–Ni Switchable Mirror Thin Films on Flexible Sheets“. Japanese Journal of Applied Physics 47, Nr. 10 (17.10.2008): 7993–97. http://dx.doi.org/10.1143/jjap.47.7993.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

39

Yamada, Y., M. Miura, K. Tajima, M. Okada und K. Yoshimura. „Pd distribution of switchable mirrors based on Mg–Y alloy thin films“. Solar Energy Materials and Solar Cells 120 (Januar 2014): 631–34. http://dx.doi.org/10.1016/j.solmat.2013.10.006.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

40

Giro, G., M. Cocchi, V. Fattori, G. Gadret, G. Ruani, M. Murgia, M. Cavallini et al. „Excimer-like electroluminescence from thin films of switchable supermolecular anthracene-based rotaxanes“. Synthetic Metals 122, Nr. 1 (Mai 2001): 27–29. http://dx.doi.org/10.1016/s0379-6779(00)01329-1.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

41

Huang, Wei, Joyprokash Chakrabartty, Catalin Harnagea, Dawit Gedamu, Ibrahima Ka, Mohamed Chaker, Federico Rosei und Riad Nechache. „Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films“. ACS Applied Materials & Interfaces 10, Nr. 15 (22.03.2018): 12790–97. http://dx.doi.org/10.1021/acsami.8b00459.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

42

Bao, S., K. Tajima, Y. Yamada, M. Okada und K. Yoshimura. „Magnesium–titanium alloy thin-film switchable mirrors“. Solar Energy Materials and Solar Cells 92, Nr. 2 (Februar 2008): 224–27. http://dx.doi.org/10.1016/j.solmat.2007.02.024.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

43

Poongodi, S., P. Suresh Kumar, Yoshitake Masuda, D. Mangalaraj, N. Ponpandian, C. Viswanathan und Seeram Ramakrishna. „Synthesis of hierarchical WO3 nanostructured thin films with enhanced electrochromic performance for switchable smart windows“. RSC Advances 5, Nr. 117 (2015): 96416–27. http://dx.doi.org/10.1039/c5ra19177g.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

44

Oliveros, Malena, Lola González-García, Veronica Mugnaini, Francisco Yubero, Nans Roques, Jaume Veciana, Agustin R. González-Elipe und Concepció Rovira. „Novel Guests for Porous Columnar Thin Films: The Switchable Perchlorinated Trityl Radical Derivatives“. Langmuir 27, Nr. 8 (19.04.2011): 5098–106. http://dx.doi.org/10.1021/la200470f.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

45

Peng, Juan, Yu Xuan, Hanfu Wang, Yuming Yang, Binyao Li und Yanchun Han. „Solvent-induced microphase separation in diblock copolymer thin films with reversibly switchable morphology“. Journal of Chemical Physics 120, Nr. 23 (15.06.2004): 11163–70. http://dx.doi.org/10.1063/1.1751177.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

46

Drechsler, Vincent, Joachim Krauth, Julian Karst, Harald Giessen und Mario Hentschel. „Switchable Optical Nonlinearity at the Metal to Insulator Transition in Magnesium Thin Films“. ACS Photonics 7, Nr. 6 (19.05.2020): 1560–68. http://dx.doi.org/10.1021/acsphotonics.0c00409.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

47

Yamada, Y., M. Miura, K. Tajima, M. Okada und K. Yoshimura. „Optical switching durability of switchable mirrors based on magnesium–yttrium alloy thin films“. Solar Energy Materials and Solar Cells 117 (Oktober 2013): 396–99. http://dx.doi.org/10.1016/j.solmat.2013.06.050.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

48

Han, Hyeon, Donghoon Kim, Kanghyun Chu, Jucheol Park, Sang Yeol Nam, Seungyang Heo, Chan-Ho Yang und Hyun Myung Jang. „Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering“. ACS Applied Materials & Interfaces 10, Nr. 2 (02.01.2018): 1846–53. http://dx.doi.org/10.1021/acsami.7b16700.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

49

Shin, Jun-Hwan, Kyung Hyun Park und Han-Cheol Ryu. „A Band-Switchable and Tunable THz Metamaterial Based on an Etched Vanadium Dioxide Thin Film“. Photonics 9, Nr. 2 (02.02.2022): 89. http://dx.doi.org/10.3390/photonics9020089.

Der volle Inhalt der Quelle

Annotation:

A band-switchable and tunable terahertz (THz) metamaterial based on a vanadium dioxide (VO2) thin film was proposed in the THz frequency regime. The VO2 thin film with a high conductivity change rate and smooth phase transition characteristics was deposited. To obtain band switching characteristics and reduce THz wave loss, the VO2 thin film was etched in the form of a line. Two rectangular C-shaped resonators were configured to face each other, with an etched VO2 thin film line in between. When the VO2 thin film was in the insulator phase, the two resonators individually resonated, and when the VO2 thin film was in the metal phase, they were connected and resonated as one, showing band switching characteristics. According to the state of the VO2 thin film, the fabricated metamaterial resonated at 1.29 THz when the two resonators were electrically separated and resonated at 0.65 THz when the two resonators were electrically connected. In the band-switching process, the THz wave transmission characteristics were continuously tunable. The measurement results of the proposed structure clearly showed that the rectangular C-shaped metamaterial based on the etched VO2 thin film is capable of band switching and continuous transmission control. In the near future, band-switchable and tunable THz metamaterials based on etched VO2 thin films can be employed as key devices in THz wave 6G wireless communication technology.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

50

Wang, Liansheng, Fengkai Xin, Quanhong Fu und Dongyan Xia. „A Thermally Controlled Ultra-Wideband Wide Incident Angle Metamaterial Absorber with Switchable Transmission at the THz Band“. Nanomaterials 15, Nr. 5 (06.03.2025): 404. https://doi.org/10.3390/nano15050404.

Der volle Inhalt der Quelle

Annotation:

We demonstrate a thermally controlled ultra-wideband wide incident angle metamaterial absorber with switchable transmission at the THz band in this paper. The underlying hybrid structure of FSS-VO2 thin films make them switchable between absorption mode and transmission mode by controlling the temperature. It can achieve ultra-wideband absorption with above 90% absorption from 1 THz to 10 THz and exhibits excellent absorption performance under a wide range of incident and polarization angles at a high temperature (80 °C). At room temperature (27 °C), it acts in transmission mode with a transmission coefficient of up to 60% at 3.1278 THz. The transmission region is inside the absorption band, which is very important for practical applications. The metamaterial absorber has the advantage of easy fabrication, an ultra-wideband, a wide incident angle, switchable multi-functions, and passivity with wide application prospects on terahertz communication and radar devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Zeitschriftenartikel zum Thema „Switchable thin films“

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an