Auswahl der wissenschaftlichen Literatur zum Thema „Surface Activated Bonding“
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Zeitschriftenartikel zum Thema "Surface Activated Bonding"
Takeuchi, Kai, Junsha Wang, Beomjoon Kim, Tadatomo Suga und Eiji Higurashi. „Room temperature bonding of Au assisted by self-assembled monolayer“. Applied Physics Letters 122, Nr. 5 (30.01.2023): 051603. http://dx.doi.org/10.1063/5.0128187.
Der volle Inhalt der QuelleLomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon und Frank Fournel. „Soft Surface Activated Bonding of Hydrophobic Silicon Substrates“. ECS Meeting Abstracts MA2023-02, Nr. 33 (22.12.2023): 1601. http://dx.doi.org/10.1149/ma2023-02331601mtgabs.
Der volle Inhalt der QuelleODA, Tomohiro, Tomoyuki ABE und Isao KUSUNOKI. „Wafer Bonding by Surface Activated Method“. Shinku 49, Nr. 5 (2006): 310–12. http://dx.doi.org/10.3131/jvsj.49.310.
Der volle Inhalt der QuelleLomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon und Frank Fournel. „Soft Surface Activated Bonding of Hydrophobic Silicon Substrates“. ECS Transactions 112, Nr. 3 (29.09.2023): 139–45. http://dx.doi.org/10.1149/11203.0139ecst.
Der volle Inhalt der QuelleYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu und Hongxing Wang. „Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding“. Materials 15, Nr. 9 (25.04.2022): 3115. http://dx.doi.org/10.3390/ma15093115.
Der volle Inhalt der QuelleYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu und Hongxing Wang. „Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding“. Materials 15, Nr. 9 (25.04.2022): 3115. http://dx.doi.org/10.3390/ma15093115.
Der volle Inhalt der QuelleYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu und Hongxing Wang. „Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding“. Materials 15, Nr. 9 (25.04.2022): 3115. http://dx.doi.org/10.3390/ma15093115.
Der volle Inhalt der QuelleSuga, Tadatomo, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa und Kenichi Iguchi. „Silicon carbide wafer bonding by modified surface activated bonding method“. Japanese Journal of Applied Physics 54, Nr. 3 (15.01.2015): 030214. http://dx.doi.org/10.7567/jjap.54.030214.
Der volle Inhalt der QuelleHe, Ran, Masahisa Fujino, Akira Yamauchi und Tadatomo Suga. „Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique“. Japanese Journal of Applied Physics 54, Nr. 3 (12.02.2015): 030218. http://dx.doi.org/10.7567/jjap.54.030218.
Der volle Inhalt der QuelleSUGA, Tadatomo. „Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB)“. Hyomen Kagaku 35, Nr. 5 (2014): 262–66. http://dx.doi.org/10.1380/jsssj.35.262.
Der volle Inhalt der QuelleDissertationen zum Thema "Surface Activated Bonding"
Lomonaco, Quentin. „Etude du collage SAB pour l'élaboration d'hétérostructure“. Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY027.
Der volle Inhalt der QuelleThese research work presented in this thesis are dedicated to the study of SAB, "Surface Active Bonding", for the fabrication of heterostructures. These are assemblies of several materials often used in optoelectronics and photonics. SAB bonding is a direct bonding technique under ultrahigh vacuum that enables the spontaneous covalent bonding of two surfaces without glue.To date, mechanical stresses, resulting from differences in thermal expansion coefficients between the materials forming the heterostructure, represent a major challenge for the manufacture of heterostructures; but controlled, they can also be advantageous for the manufacture process and the quality of the final products.The field of studies developed in this study focuses on the fabrication of single-crystal thin-film heterostructures from thick substrates, using the Smart Cut™ process and SAB bonding.This work introduces for the first time the possibility of producing hot bonds using SAB bonding technology, by developing a new method called SAHB for "Surface Active Hot Bonding". The latter offers the opportunity of controlling the temperature during bonding, enabling mechanical stresses due to differences in thermal expansion coefficients in the heterostructure to be managed. One of the main applications of this new SAHB method is that it can be used to transfer strained single-crystal germanium films of several hundred nanometers onto silicon substrates. Finite-element modeling is used to understand this SAHB bonding technology, as it enables structural deformations to be visualized and stress levels to be estimated in order to limit heterostructure breakage during fabrication, while maximizing the stress stored in the transferred film. In addition, the study of SAHB bonding highlights the need for precise temperature management and a high-quality bonding atmosphere to guarantee its effectiveness.This study led to the investigation of SAB bonding mechanisms, with work on the impact of activation on the amorphization of the bonding interface. The results show that the mere presence of dangling bonds is not sufficient to explain the very high adherence of standard SAB, but that it is necessary for the surface to be sufficiently "malleable" to allow asperity tips to crush and dangling bonds to pair.The work presented in this manuscript introduce a new bonding method, the SAHB, and develops the production of the first heterostructures by this route. This method opens up new perspectives for the fabrication of complex structures and the manipulation of stresses in heterogeneous materials.Keywords: Direct bonding, covalent bonding, SAB bonding, heterostructure bonding, silicon bonding, SAHB bonding, film transfer, thin monocrystalline films
Schönström, Linus, Anna Nordh, Anton Strignert, Frida Lemel, Jakob Ekengard, Sofie Wallin und Zargham Jabri. „A process recipe for bonding a silicone membrane to a plastic substrate“. Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008.
Der volle Inhalt der QuelleHu, Hui-Chin, und 胡惠欽. „Improving wafer bonding of dissimilar materials by ozone plasma activated surface“. Thesis, 2016. http://ndltd.ncl.edu.tw/handle/93237377683430443514.
Der volle Inhalt der Quelle國立中央大學
機械工程學系
104
Wafer Bonding Techniques has an advantage that can combine wafer with different materials with great bonding interface. It provides convenience and integration for high-tech industry. However, it will exist thermal expansion mismatch between different materials, great thermal stress may cause sample debond even crack after annealing. In this work, we developed wafer bonding techniques to bond Si and GaAs wafers. First, we use ultraviolet/ozone (UVO) plasma to modify the surface of wafers. Second, we compare the wafers in symmetrical bonded structure with asymmetric bonded structure. In result, wafers could bond together in 200℃ after surface activation. Besides, the wafers in symmetrical bonded structure could effectively counteract heat stress even heat to 350 ℃, and it is still not crack.
Buchteile zum Thema "Surface Activated Bonding"
Suga, Tadatomo. „Recent Progress in Surface Activated Bonding“. In Ceramic Microstructures, 385–89. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_36.
Der volle Inhalt der QuelleSuga, Tadatomo, Toshihiro Itoh und Matiar R. Howlader. „An 8-inch Wafer Bonding Apparatus with Ultra-High Alignment Accuracy Using Surface Activated Bonding (SAB) Concept“. In Transducers ’01 Eurosensors XV, 222–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_52.
Der volle Inhalt der QuelleShimoi, Norihiro. „Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron“. In Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97037.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Surface Activated Bonding"
Suga, Tadatomo, und Fengwen Mu. „Surface Activated Bonding Method for Low Temperature Bonding“. In 2018 7th Electronic System-Integration Technology Conference (ESTC). IEEE, 2018. http://dx.doi.org/10.1109/estc.2018.8546367.
Der volle Inhalt der QuelleWang, Chenxi, Eiji Higurashi und Tadatomo Suga. „Silicon Wafer Bonding by Modified Surface Activated Bonding Methods“. In 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339133.
Der volle Inhalt der QuelleMu, Fengwen, und Tadatomo Suga. „Room temperature GaN bonding by surface activated bonding methods“. In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480574.
Der volle Inhalt der QuelleShingo Taniyama, Ying-Hui Wang, Masahisa Fujino und Tadatomo Suga. „Room temperature wafer bonding using surface activated bonding method“. In 2008 IEEE 9th VLSI Packaging Workshop of Japan. IEEE, 2008. http://dx.doi.org/10.1109/vpwj.2008.4762236.
Der volle Inhalt der QuelleMu, F., und T. Suga. „Room Temperature GaN Bonding by Surface Activated Bonding Method“. In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.ps-4-01.
Der volle Inhalt der QuelleTsukamoto, Kei, Eiji Higurashi und Tadatomo Suga. „Evaluation of surface microroughness for surface activated bonding“. In 2010 IEEE CPMT Symposium Japan (Formerly VLSI Packaging Workshop of Japan). IEEE, 2010. http://dx.doi.org/10.1109/cpmtsympj.2010.5679979.
Der volle Inhalt der QuelleHowlader, M. M. R., und T. Suga. „Surface Activated Bonding Method for Flexible Lamination“. In 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339181.
Der volle Inhalt der QuelleT., Luttermann, Wich T. und Mikczinski M. „Localized Surface Activated Bonding of Nanoscale Objects“. In 8th International Conference on Multi-Material Micro Manufacture. Singapore: Research Publishing Services, 2011. http://dx.doi.org/10.3850/978-981-07-0319-6_225.
Der volle Inhalt der QuelleHigurashi, Eiji, Masao Nakagawa, Tadatomo Suga und Renshi Sawada. „Surface Activated Flip-Chip Bonding of Laser Chips“. In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73436.
Der volle Inhalt der QuelleHe, Ran, Masahisa Fujino, Tadatomo Suga und Akira Yamauchi. „Development of combined surface activated bonding (SAB) method for hydrophilic wafer bonding“. In 2014 IEEE CPMT Symposium Japan (ICSJ). IEEE, 2014. http://dx.doi.org/10.1109/icsj.2014.7009611.
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