Thematische Bibliographien / Sputter Magnetron

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Auswahl der wissenschaftlichen Literatur zum Thema „Sputter Magnetron“

Autor: Grafiati

Veröffentlicht am 4. Juni 2021

Zuletzt aktualisiert am 1. Februar 2022

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Zeitschriftenartikel zum Thema "Sputter Magnetron"

Wolke, Joop G. C., E. Vandenbulcke, B. van Oirschot und John A. Jansen. „A Study to the Surface Characteristics of RF Magnetron Sputtered Bioglass - and Calcium Phosphate Coatings“. Key Engineering Materials 284-286 (April 2005): 187–90. http://dx.doi.org/10.4028/www.scientific.net/kem.284-286.187.

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The RF magnetron sputter technique was used to deposit Bioglass (BG) and hydroxyapatite (HA) coatings onto titanium substrates. In the current study, the physico-chemical and dissolution properties of various deposited coatings were investigated. X-ray diffraction demonstrated that the as-sputtered coatings had an amorphous structure, a heattreatment for 2 hours at 600°C changed only the HA coating into a crystalline apatite structure. Dissolution experiments demonstrated that all the amorphous coatings dissolved during the incubation for 4 weeks in simulated body fluid, while all the heattreated sputter coatings were still maintained. In contrast with the HA heattreated sputter coatings all the bioglass containing sputter coatings showed the formation of a crystalline apatite phase. Scanning electron microscopical examination of the sputtered coatings demonstrated that on all the heattreated BG/HG sputter coating a thick CaP precipitate was formed, while on the BG sputter coating occasionally a globular precipitate was observed.

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Rossnagel, S. M., D. Mikalsen, H. Kinoshita und J. J. Cuomo. „Collimated magnetron sputter deposition“. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, Nr. 2 (März 1991): 261–65. http://dx.doi.org/10.1116/1.577531.

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Johnson, Mark, und Paul Cote. „Modeling Magnetron Sputter Deposition“. Materials and Manufacturing Processes 21, Nr. 6 (September 2006): 628–33. http://dx.doi.org/10.1080/10426910600611045.

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Schiller, S., K. Goedicke, J. Reschke, V. Kirchhoff, S. Schneider und F. Milde. „Pulsed magnetron sputter technology“. Surface and Coatings Technology 61, Nr. 1-3 (Dezember 1993): 331–37. http://dx.doi.org/10.1016/0257-8972(93)90248-m.

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Na, Dong-Myong, Young-Bok Kim und Jin-Seong Park. „The characteristics of Pt thin films prepared by DC magnetron sputter“. Journal of Sensor Science and Technology 16, Nr. 2 (31.03.2007): 159–64. http://dx.doi.org/10.5369/jsst.2007.16.2.159.

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Wolke, Joop G. C., Jeroen J. J. P. van den Beucken und John A. Jansen. „Growth Behavior of Rat Bone Marrow Cells on RF Magnetron Sputtered Bioglass- and Calcium Phosphate Coatings“. Key Engineering Materials 361-363 (November 2007): 253–56. http://dx.doi.org/10.4028/www.scientific.net/kem.361-363.253.

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The RF magnetron sputter technique was used to deposit Bioglass (BG) and hydroxyapatite (HA) coatings onto titanium substrates. The aim of this study was evaluated the growth behavior of rat bone marrow cells of various deposited coatings. The EDS measurements demonstrated that the composition BG coating was changed during magnetron sputtering. The rat bone marrow derived osteoblast-like cells showed improved osteogenic response on crystalline magnetron sputtered HA coatings compared BG coatings. Scanning electron microscopical examination showed an extensive mineralization after 16 days of culture, while on the surface of the BG coating only a multilayer without mineralization could be observed.

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De Bosscher, Wilmert, und Hugo Lievens. „Advances in magnetron sputter sources“. Thin Solid Films 351, Nr. 1-2 (August 1999): 15–20. http://dx.doi.org/10.1016/s0040-6090(99)00149-2.

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Ling, S. H., und H. K. Wong. „High pressure magnetron sputter gun“. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, Nr. 3 (Mai 1992): 573–75. http://dx.doi.org/10.1116/1.578190.

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Shon, C. H., J. K. Lee, H. J. Lee, Y. Yang und T. H. Chung. „Velocity distributions in magnetron sputter“. IEEE Transactions on Plasma Science 26, Nr. 6 (1998): 1635–44. http://dx.doi.org/10.1109/27.747881.

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Sutter, P., E. Müller, S. Tao, C. Schwarz, M. Filzmoser, M. Lenz und H. von Känel. „Magnetron sputter epitaxy of heterostructures“. Journal of Crystal Growth 157, Nr. 1-4 (Dezember 1995): 172–76. http://dx.doi.org/10.1016/0022-0248(95)00384-3.

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Dissertationen zum Thema "Sputter Magnetron"

Chiu, K. F. „Ionised magnetron sputter deposition“. Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597619.

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The goal of this research work was to establish the Ionised Magnetron Sputter Deposition (IMSD) system and apply it to thin film fabrication. Using magnetron sputter deposition, with an additional built-in rf coil generating a rf coupled plasma to ionise sputtered atoms, the process provides a high level of control over the energy input to a growing film. The controllable parameters include ion flux, ion incident energy and the ratio of ions to neutrals of the depositing species. The possibility of depositing films and coatings with up to 85% of the depositing species as ions with energies controllable up to 150 eV offers a remarkable opportunity to engineer film growth and modify film properties by precisely controlled ion bombardment. The work presented here is concerned with the investigation and understanding of the basic properties of the IMSD process. It is composed of (1) a background introduction; (2) IMSD system characterisation; (3) characterisation of IMSD deposited metal thin films. Firstly, an introduction to magnetron sputtering and the effects of energetic bombardment on film properties, and a brief survey of ion assisted techniques are presented. The recently developed IMSD process is then introduced. The rf inductively coupled (RFI) plasma generated in the IMSD process was characterised using a single electrical probe. The RFI plasma is confined close to the substrate, and the bombarding ions are drawn directly from it, so that the plasma parameters are crucial to the ion bombardment on the substrate surface, in terms of ion flux and ion energy. It is found that the ion flux can be controlled by the power applied to the rf coil, which controls the ion density. The ion incident energy can be determined by the difference between plasma and substrate potentials. The ionisation fraction of the depositing flux (ratio of ions to total depositing atoms) has been measured by a parallel-plates method, which was developed here. The probe method was also employed later to confirm the measurement. Directionality of depositing flux was examined by depositing films into sub-micron vias and trenches.

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Schoff, Michael Elliott. „Sputter target erosion and its effects on long duration DC magnetron sputter coating“. Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p1464930.

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Thesis (M.S.)--University of California, San Diego, 2009.
Title from first page of PDF file (viewed July 14, 2009). Available via ProQuest Digital Dissertations. Includes bibliographical references (p. 54-55).

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Junaid, Muhammad. „Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods“. Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84655.

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In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. For the growth of epitaxial GaN films two types of sputtering techniques, direct current (DC) magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) were studied. The GaN epitaxial films grown by DC-MSE directly on to Al2O3(0001) in a mixture of Ar and N2, feature low threading dislocation densities on the order of ≤ 1010 cm-2, as determined by transmission electron microscopy (TEM) and modified Williamson-Hall plots. X-ray rocking curves reveal a narrow full-width at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence (PL) peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. GaN(0001) epitaxial films grown on Al2O3 substrates by HiPIMS deposition in a mixed N2/Ar discharge contain both strained domains and almost relaxed domains in the same epilayers, which was determined by a combination of x-ray diffraction (XRD), TEM, atomic force microscopy (AFM), μ-Raman microscopy, μ-PL, and Cathodoluminescence (CL). The almost fully relaxed domains show superior structural and optical properties evidenced by a rocking curves with full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the FWHM of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to higher densities of point and extended defects, resulting from bombardment of energetic species during growth. Single-crystal GaN(0001) nanorods have been grown directly on Si(111) substrates by DC-MSE in a pure N2environment. The as-grown GaN nanorods exhibit very high crystal quality from bottom to the top without any stacking faults, as determined by TEM. The crystal quality is found to increase with increasing working pressure. XRD results show that all the rods are highly 0001 oriented. All nanorods exhibit an N-polarity, as determined by convergent beam electron diffraction methods. Sharp and well-resolved 4 K μ-PL peaks at ~3.474 eV with a FWHM ranging from 1.7 meV to 22 meV are attributed to the intrinsic GaN band edge emission and corroborate the exceptional crystal quality of the material. Texture measurements reveal that the rods have random in-plane orientation when grown on Si(111) with its native oxide while they have an inplane epitaxial relationship of GaN[11̅20] // Si[1̅10] when grown on Si(111) without the surface oxide. The best structural and optical properties of the rods were achieved at N2 partial pressures of 15 to 20 mTorr. By diluting the reactive N2 working gas in DC-MSE with Ar, it is possible to achieve favorable growth conditions for high quality GaN nanorods onto Si(111) at a low total pressure of 5 mTorr. With an addition of small amount of Ar (0.5 mTorr), we observe an increase in nanorod aspect ratio from 8 to ~35, a decrease in average diameter from 74 nm to 35 nm, and a 2-fold increase in nanorod density compared to pure N2 conditions. By further dilution, the aspect ratio continuously decreases to 14 while the diameter increases to 60 nm and the nanorod density increases to a maximum of 2.4×109 cm-1. The changes in nanorod morphology upon Ar-dilution of the N2 working gas are explained by a transition from N-rich growth conditions, promoting the diffusion induced nanorods growth mode, to Ga-rich growth conditions, in qualitative agreement with GaN nanorods growth by MBE. At N2 partial pressure of 2.5 mTorr, the Ga-target is close to a non-poisoned state which gives the most perfect crystal quality which is reflected in an exceptionally narrow band edge emission at 3.479 eV with a FWHM of only 1.7 meV. Such structural and optical properties are comparable to rods previously grown at 3 to 4 time higher total working pressures of pure N2.

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Serban, Alexandra. „Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods“. Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141595.

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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film – substrate mismatch. The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1−xN self-assembled, core-shell nanorods on Si(111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters. Both self-assembled and selective-area grown GaN nanorods are presented. Self-assembled growth of GaN nanorods on cost-effective substrates offers a cheaper alternative and simplifies device processing. Successful growth of high- quality GaN (exhibiting strong bandedge emission and high crystalline quality) on conductive templates/substrates such as Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti is supported by the possibility to be used as electrodes when integrated in optoelectronic devices. The self-assembled growth leads to mainly random nucleation, resulting in nanorods with large varieties of diameters, heights and densities within a single growth run. This translates into non-uniform properties and complicates device processing. These problems can be circumvented by employing selective-area growth. Pre-patterned substrates by nano-sphere lithography resulted in GaN nanorods with controlled length, diameter, shape, and density. Well-faceted c-axis oriented GaN nanorods were grown directly onto the native SiOx layer inside nano-opening areas, exhibiting strong bandedge emission at room- temperature and single-mode lasing. Our studies on the growth mechanism revealed a different growth behavior when compared with selective-area grown GaN nanorods by MBE and MOCVD. The time-dependent growth series helped define a comprehensive growth mechanism from the initial thin wetting layer formed inside the openings, to the well-defined, uniform, hexagonal NRs resulted from the coalescence of multiple initial nuclei.

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Long, Yi. „Hardness of nitride thin films made by ionised magnetron sputter deposition“. Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614990.

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O'Kane, Chris. „Optimisation of RF magnetron sputter deposited calcium phosphate (Ca-P) thin films“. Thesis, University of Ulster, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.535139.

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Perry, Duncan. „Optimisation of a closed-field unbalanced magnetron sputter process : titanium aluminium nitride“. Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308219.

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Žukauskaitė, Agnė. „Metastable ScAlN and YAlN Thin Films Grown by Reactive Magnetron Sputter Epitaxy“. Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-103832.

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Metastable ScxAl1-xN and YxAl1-xN thin films were deposited in an ultra high vacuum system using reactive magnetron sputter epitaxy from elemental Al, Sc, and Y targets in Ar/N2 gas mixture. Their structural, electrical, optical, mechanical, and piezoelectrical properties were investigated by using the transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, I-V and C-V measurements, nanoindentation, and two different techniques for piezoelectric characterization: piezoresponse force microscopy and double beam interferometry. Compared to AlN, improved electromechanical coupling and increase in piezoelectric response was found in ScxAl1-xN/TiN/Al2O3 structures with Sc content up to x=0.2. Decreasing the growth temperature down to 400 °C improved the microstructure and crystalline quality of the material. Microstructure of the films had a stronger influence on piezoelectric properties than the crystalline quality, which affected the leakage currents. When x was increased from x=0 to x=0.3, the hardness and reduced Young’s modulus Er showed a decrease from 17 GPa to 11 GPa, and 265 GPa down to 224 GPa, respectively. In ScxAl1-xN/InyAl1-yN superlattices, ScxAl1-xN layers negative lattice mismatched to In-rich InyAl1-yN were found to be stable at higher Sc concentration (x=0.4) than lattice-matched or positive lattice mismatched layers, confirmed by first principle (ab initio) calculations using density-functional formalism. Al-rich YxAl1-xN thin films were synthesized and reported for the first time. Formation of solid solution was observed up to x=0.22 and an increase in growth temperature up to 900°C improved the crystalline quality of the YxAl1-xN films. The band gap of YxAl1-xN decreased from 6.2 eV for AlN down to 4.5 eV (x=0.22) and was shown to follow Vegard’s rule. Refractive indices and extinction coefficients were also determined. Lattice constants of wurtzite YxAl1-xN measured experimentally are in good agreement with theoretical predictions obtained through ab initio calculations. The mixing enthalpy

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Ratova, Marina. „Enhanced properties of photocatalytic titania thin films via doping during magnetron sputter deposition“. Thesis, Manchester Metropolitan University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603487.

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Güttler, D. „Echtzeit-in-situ-Messung der Oberflächenbelegung einer Magnetron-Kathode bei der reaktiven Sputter-Abscheidung“. Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-61184.

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Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can be sputtered from metal targets, which are comparatively cost efficient. Also the fact that sputtering from metal targets can ccur in the dc mode reduces the cost of the sputtering equipment. To keep the deposition process stable, its necessary to know the effects of target poisoning including its hyteresis behavior. The aim of this work was to nvestigate the evolution of reactive gas coverage on a titanium magnetron target surface, by real time, in-situ ion beam analysis during magnetron sputtering. A cylindrical 2 inch magnetron was used for reactive sputtering of TiN. It was operated in an Ar/N2 gas mixture at achamber pressure of about 3∙10-3 mbar. The argon/nitrogen flux ratio was variated between 0 and 20%. The nitrogen concentration on the target was determinated using the 14N(d, α)12C, nuclear reaction at a deuterium beam energy of 1.8 MeV. Depending on the adjusted nitrogen flow the target incorporation varies between 0 and about 1∙1016 N∙cm-2. Further the expected hysteresis behaviour ofnitrogen partial pressure, target voltage and nitrogen concentration at increasing/decreasing nitrogen gas flow is confirmed. The lateral distribution of nitrogen was measured across the diameter of target surface. In the zone of higher erosion (the \"race track\") the nitrogen concentration is 50% lower than in the middle or the edge of the target. A deposition zone in the center of the target could not be detected. By increasing the nitrogen flow into the chamber a saturation in nitrogen content in the target was found at an Ar/N2 flow ratio of about 10%. Assuming nitrogen implantation with a depth of 2.5 nm under the influence of typical target voltage during magnetron sputtering, this saturation is at a concentration value where stoichiomtric TiN is formed. Within the precision of the measurements, a mobile fraction of nitrogen could not determined. The concentration in the target remains unchanged after switching off the magnetron.

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Bücher zum Thema "Sputter Magnetron"

Güttler, Dominik. Echtzeit-in-situ-Messung der Oberflächenbelegung einer Magnetron-Kathode bei der reaktiven Sputter-Abscheidung. Dresden: Forschungszentrum Rossendorf, 2004.

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Olsson, Maryam Kharrazi. High-Rate Reactive Magnetron Sputter Deposition and Characterization of Metal Oxide Films. Uppsala Universitet, 2000.

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Talivaldis, Spalvins, Lewis Research Center und United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., Hrsg. Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films. [Washington, D.C.]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1990.

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Warner, Edward Steven. Modification of the properties of D.C. magnetron sputtered magnetic thin films by self-bias. 1991.

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J, Waters William, Soltis Richard und United States. National Aeronautics and Space Administration., Hrsg. MS212-A homogeneous sputtered solid lubricant coating for use to 800⁰C. [Washington, DC]: National Aeronautics and Space Administration, 1997.

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Buchteile zum Thema "Sputter Magnetron"

Bogaerts, Annemie, Ivan Kolev und Guy Buyle. „Modeling of the Magnetron Discharge“. In Reactive Sputter Deposition, 61–130. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_3.

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Kupfer, H., und F. Richter. „Reactive Magnetron Sputtering of Indium Tin Oxide Thin Films: The Cross-Corner and Cross-Magnetron Effect“. In Reactive Sputter Deposition, 337–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_10.

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Konstantinidis, Stephanos, F. Gaboriau, M. Gaillard, M. Hecq und A. Ricard. „Optical Plasma Diagnostics During Reactive Magnetron Sputtering“. In Reactive Sputter Deposition, 301–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_9.

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Granqvist, C. G. „Oxide-Based Electrochromic Materials and Devices Prepared by Magnetron Sputtering“. In Reactive Sputter Deposition, 485–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_13.

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Depla, Diederik, Stijn Mahieu und Roger De Gryse. „Depositing Aluminium Oxide: A Case Study of Reactive Magnetron Sputtering“. In Reactive Sputter Deposition, 153–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_5.

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Ekpe, Samuel D., und Steven K. Dew. „Energy Deposition at the Substrate in a Magnetron Sputtering System“. In Reactive Sputter Deposition, 229–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_7.

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Gregor, V., J. Pridal, J. Pracharova, J. Bludska, I. Jakubec, L. Papadimitriou und Y. Samaras. „Amorphous Carbon Films: Magnetron Sputter Deposition and Li-Intercalation Properties“. In Materials for Lithium-Ion Batteries, 599–601. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4333-2_51.

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Usha, K. S., R. Sivakumar und C. Sanjeeviraja. „Structural and Optical Studies on Radio Frequency (Rf) Magnetron Sputter Deposited Nickel Oxide Thin Films“. In Springer Proceedings in Materials, 1151–54. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8319-3_114.

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Haddad, Daad, GuangLing Song und Yang Tse Cheng. „Structure and Mechanical Properties of Magnesium-Titanium Solid Solution Thin Film Alloys Prepared by Magnetron-sputter Deposition“. In Magnesium Technology 2011, 617–21. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118062029.ch113.

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Haddad, Daad, GuangLing Song und Yang Tse Cheng. „Structure and Mechanical Properties of Magnesium-Titanium Solid Solution Thin Film Alloys Prepared by Magnetron-sputter Deposition“. In Magnesium Technology 2011, 617–21. Cham: Springer International Publishing, 2011. http://dx.doi.org/10.1007/978-3-319-48223-1_113.

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Konferenzberichte zum Thema "Sputter Magnetron"

Vinodbabu, Chintada, G. Thirumala Rao, N. Bakthavatchala Reddy und Grigory V. Zyryanov. „A review on magnetron sputter coatings“. In PROCEEDINGS OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN MECHANICAL AND MATERIALS ENGINEERING: ICRTMME 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0018142.

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Krishnasamy, Jegenathan, Kah-Yoong Chan, Jian-Wei Hoon, Sharul Ashikin Binti Kamaruddin und Teck-Yong Tou. „Direct current magnetron sputter-deposited ZnO thin films“. In 2010 International Conference on Photonics (ICP). IEEE, 2010. http://dx.doi.org/10.1109/icp.2010.5604395.

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Frach, Peter, Hagen Bartzsch, Daniel Gloess, Kerstin Taeschner und Joern-Steffen Liebig. „Reactive Magnetron Sputter Technologies for Precision Optical Coatings“. In Optical Interference Coatings. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/oic.2013.thb.7.

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Wright, Michael P. „Post Magnetron Sputter And Reactive Sputter Coating Of Contoured Glass, Acrylic And Polycarbonate Substrates“. In 29th Annual Technical Symposium, herausgegeben von Carl M. Lampert. SPIE, 1985. http://dx.doi.org/10.1117/12.966315.

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Abou-Hanna, Jeries, John Carlson und Jose´ Lozano. „Chemistry Consistency Analysis of Tungsten-Doped Diamond-Like Carbon (DLC) Coatings“. In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79136.

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Tungsten-doped diamond-like carbon (DLC) coatings have been magnetron sputtered onto 52100 steel with chromium and chromium/tungsten carbide dual interlayers using a Hauzer Techno Coating HTC 1200 4 UBM unbalanced magnetron deposition system. Internal fixturing to the deposition chamber rotates parts to be coated with a two degree of freedom system. By design, at certain intervals during the deposition, the acetylene flow is linearly altered to change film characteristics throughout the film. AES sputter depth profiling analysis shows that the fixture rotational system, designed to uniformly coat parts, causes localized chemistry variations in the coating. For a given location, the AES depth profile also clearly documents the intervals when acetylene flow was constant and when the flow was ramped.

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Ruizeng, Y., Z. Lang, C. Shouhua, G. Lian und L. Fanxiu. „An Investigation on Magnetron Sputter Deposited Alloy-Oxide Coating“. In Superalloys. TMS, 1988. http://dx.doi.org/10.7449/1988/superalloys_1988_865_872.

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Vergöhl, Michael, Oliver Werner und Stefan Bruns. „New developments in magnetron sputter processes for precision optics“. In Optical Systems Design, herausgegeben von Norbert Kaiser, Michel Lequime und H. Angus Macleod. SPIE, 2008. http://dx.doi.org/10.1117/12.797190.

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Perekrestov, Vyacheslav, Yuliia Kosminska und Borys Dyoshyn. „Fabrication of Multicomponent Carbide Coatings by Modified Magnetron Sputter Deposition“. In 2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP). IEEE, 2019. http://dx.doi.org/10.1109/nap47236.2019.219082.

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Ebd El-Rahman, A. M., und R. Wei. „http://svc.org/DigitalLibrary/document.cfm/1089/A-Comparative-Study-of-Conventional-Magnetron-Sputter-Deposited-and-Plasma-Enhanced-Magnetron-Sputter-Deposited-Ti-Si-C-N-Nanocomposite-Coatings“. In Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2013. http://dx.doi.org/10.14332/svc13.proc.1089.

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Liang, Yu-Han, und Chuan-Pu Liu. „Self-assembled Zn/ZnO dots on silicon by RF magnetron sputter“. In 2007 Digest of papers Microprocesses and Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/imnc.2007.4456152.

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Berichte der Organisationen zum Thema "Sputter Magnetron"

Walton, C., G. Gilmer, A. Wemhoff und L. Zepeda-Ruiz. Full-Process Computer Model of Magnetron Sputter, Part I: Test Existing State-of-Art Components. Office of Scientific and Technical Information (OSTI), September 2007. http://dx.doi.org/10.2172/922114.

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Laube, Samuel J., und Jeffery J. Heyob. Magnetron Sputtered Pulsed Laser Deposition Scale Up. Fort Belvoir, VA: Defense Technical Information Center, August 2003. http://dx.doi.org/10.21236/ada422887.

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Beatty, John H., Paul J. Huang, Constantine G. Fountzoulas und John V. Kelly. Tribological Evaluation of Magnetron-Sputtered Coating for Military Applications. Fort Belvoir, VA: Defense Technical Information Center, Februar 1999. http://dx.doi.org/10.21236/ada360673.

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