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Auswahl der wissenschaftlichen Literatur zum Thema „Spreading device“
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Zeitschriftenartikel zum Thema "Spreading device"
Liu, Ye, Xin An Dang und Li Jun Yang. „Study of the Transmission System of Spreading Powder Device of Direct Metal Sintering Rapid Prototyping Machine“. Advanced Materials Research 591-593 (November 2012): 602–5. http://dx.doi.org/10.4028/www.scientific.net/amr.591-593.602.
Der volle Inhalt der QuelleSiddiqui, Ahmad Talha, Shoeb Ahad Siddiqui und Mohammad Ibrahim. „AFDroid: Anti-Forensics Device To Protect Android System“. INTERNATIONAL JOURNAL OF COMPUTERS & TECHNOLOGY 9, Nr. 3 (25.07.2013): 1134–38. http://dx.doi.org/10.24297/ijct.v9i3.3339.
Der volle Inhalt der QuelleAsada, Satoshi, Jun Suda und Tsunenobu Kimoto. „Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain“. Materials Science Forum 924 (Juni 2018): 629–32. http://dx.doi.org/10.4028/www.scientific.net/msf.924.629.
Der volle Inhalt der QuelleKwasny, Dorota, Olga Mednova, Indumathi Vedarethinam, Maria Dimaki, Asli Silahtaroglu, Zeynep Tümer, Kristoffer Almdal und Winnie Svendsen. „A Semi-Closed Device for Chromosome Spreading for Cytogenetic Analysis“. Micromachines 5, Nr. 2 (03.04.2014): 158–70. http://dx.doi.org/10.3390/mi5020158.
Der volle Inhalt der QuelleFurukawa, Kazuaki, Hiroshi Nakashima, Yoshiaki Kashimura und Keiichi Torimitsu. „Microchannel device using self-spreading lipid bilayer as molecule carrier“. Lab on a Chip 6, Nr. 8 (2006): 1001. http://dx.doi.org/10.1039/b603568j.
Der volle Inhalt der QuelleOgunniyi, Aderinto, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J. Lelis, Stephen Bayne und Sei Hyung Ryu. „Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs“. Materials Science Forum 897 (Mai 2017): 575–78. http://dx.doi.org/10.4028/www.scientific.net/msf.897.575.
Der volle Inhalt der QuelleElpelt, Rudolf, Bernd Zippelius, Stefan Doering und Uwe Winkler. „Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide“. Materials Science Forum 897 (Mai 2017): 295–98. http://dx.doi.org/10.4028/www.scientific.net/msf.897.295.
Der volle Inhalt der QuelleSingh, Manikant, Serge Karboyan, Michael J. Uren, Kean Boon Lee, Zaffar Zaidi, Peter A. Houston und Martin Kuball. „Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers“. Microelectronics Reliability 95 (April 2019): 81–86. http://dx.doi.org/10.1016/j.microrel.2019.02.012.
Der volle Inhalt der QuelleEdén, Ulla M., und Lauritz W. Olson. „A Simple and Safe Device for Spreading Ultrathin Sections with Chloroform“. Biotechnic & Histochemistry 68, Nr. 2 (Januar 1993): 65–66. http://dx.doi.org/10.3109/10520299309104668.
Der volle Inhalt der QuelleBandari, Anashe. „Sandwich device ensures rapid and even spreading of biofluids for analysis“. Scilight 2020, Nr. 34 (21.08.2020): 341106. http://dx.doi.org/10.1063/10.0001880.
Der volle Inhalt der QuelleDissertationen zum Thema "Spreading device"
Pacher, Ján. „Návrh konstrukce rozmetadla tuhých statkových hnojiv“. Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443173.
Der volle Inhalt der QuelleSampara, N. „Voltage induced spreading and liquid optical devices“. Thesis, Nottingham Trent University, 2013. http://irep.ntu.ac.uk/id/eprint/83/.
Der volle Inhalt der QuelleCourte, Josquin. „Étude de la propagation prion-like de l'alpha-synucléine dans des réseaux de neurones reconstruits Reconstruction of directed neuronal networks in a microfluidic device with asymmetric microchannels Neurotoxicity of the Cyanotoxin BMAA Through Axonal Degeneration and Intercellular Spreading“. Thesis, Sorbonne université, 2019. https://accesdistant.sorbonne-universite.fr/login?url=http://theses-intra.upmc.fr/modules/resources/download/theses/2019SORUS053.pdf.
Der volle Inhalt der QuelleNeurodegenerative diseases such as Parkinsons’s or Alzheimer’s diseases are characterized by the aggregation of misfolded proteins in insoluble inclusions. These inclusions trigger cellular dysfnctions and are therefore thought to play an important role in the development of these pathologies. They appear following a conserved pattern in subgroups of patients. In Parkinson’s disease, the small presynaptic protein alpha-synuclein (aSyn) is the main component of protein deposits termed Lewy bodies and Lewy neurites. These appear following a stereotypical pattern known as “Braak staging” in a consequent subset of patients. The pattern of inclusion formation partly follows neuroanatomical connectivity, suggesting that protein aggregation propagates in neural networks. Prion diseases such as kuru or Creutzfeldt-Jakob’s disease have revealed an original mechanism for propagating protein misfolding. The PrP protein, aggregated in these diseases, is able to have two radically distinct conformations. The pathological one aggregates in supramolecular assemblies, while the functional one does not. Through an incompletely understood mechanism which might share similarities with the formation of amyloid fibrils, the pathological form of the protein is able to convert the functional form into the pathological one, recruiting it into aggregates. The abnormal form of the protein is thus able to self-propagate, from cell to cell and from organism to organism. Numerous biochemical and molecular characteristics of aggregates detected in neurodegenerative diseases are shared with the prion aggregates. It is thus hypothesized that protein aggregation in neurodegenerative diseases unfolds in a similar manner to prion aggregation. In this scenario, protein aggregation is able to be transmitted from neuron to neuron following neuroanatomical connectivity, and thus propagates in a stereotypical manner in neural networks following axonal tracts. This scenario is named “prion-like hypothesis”. However, how the prion-like propagation of aSyn generates the conserved pattern of aggregates in the brain of patients is still unknown. The aim of my PhD thesis has been to decipher parameters impacting the prion-like propagation of aSyn in heterogeneous neural networks with in vitro models. I first assessed if specific neuronal populations cultured from various regions of the mouse brain exhibited the same vulnerability to the prion-like recruitment of aSyn in pathological aggregates following their exposure to exogenous aSyn fibrils. I was able to demonstrate that cortical, striatal and hippocampal primary neuronal cultures had a significant difference in their vulnerability to prion-like seeding of aSyn aggregation. I also demonstrated that this vulnerability was due to the differential expression of aSyn in these populations. I then developed a culture system allowing for the controlled reconstruction of primary murine neurons networks. This system allows for the perfect filtration of axonal outgrowth in one direction, thus allowing the reconstruction of fully oriented binary networks. Axonal growth orientation is a prerequisite to the in vitro study of pathogens propagation in neural networks. This system is the first to achieve this level of axonal filtration while allowing synaptic connectivity between the two compartments. I finally modeled aSyn prion-like propagation in these reconstructed networks by selectively introducing exogenous fluorescent aSyn fibrils in the “presynaptic” compartment and following aggregation propagation to the “postsynaptic” compartment. This propagation can only occur through crossing axons, as the two compartments are fluidically isolated. I demonstrated that anterograde aSyn prion-like propagation was relatively inefficient in this experimental framework. Indeed, while a small quantity of exogenous fibrils are transferred to postsynaptic neurons, they are not able to seed endogenous aSyn aggregation in those. [...]
Rossi, Stefano [Verfasser]. „Nanocrystalline diamond growth for top heat-spreading applications on GaN-based devices / Stefano Rossi“. Ulm : Universität Ulm. Fakultät für Ingenieurwissenschaften und Informatik, 2015. http://d-nb.info/1077559380/34.
Der volle Inhalt der QuelleMoreno, Villavicencio Maiglid Andreina. „Development of 3D high-resolution imaging of complex devices by the correlation of ToF-SIMS and AFM“. Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI122.
Der volle Inhalt der QuelleThe continuous miniaturization and complexity of devices have pushed existing nano-characterization techniques to their limits. The correlation of techniques has then become an attractive solution to keep providing precise and accurate characterization. With the aim of overcoming the existing barriers for the 3D high-resolution imaging at the nanoscale, we have focused our research on creating a protocol to combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) with atomic force microscopy (AFM). This combination permits the correlation of the composition in 3-dimensions with the maps of topography and other local properties provided by the AFM. Three main results are achieved through this methodology: a topography-corrected 3D ToF-SIMS data set, maps of local sputter rate where the effect of roughness and vertical interfaces are seen and overlays of the ToF-SIMS and AFM advanced information. The application fields of the ToF-SIMS and AFM combined methodology can be larger than expected. Indeed, four different applications are discussed in this thesis. The procedure to obtain the topography-corrected 3D data sets was applied on a GaAs / SiO2 patterned structure whose initial topography and composition with materials of different sputter rates create a distortion in the classical 3D chemical visualization. The protocol to generate sputter rate maps was used on samples with structured and non-structured nano-areas in order to study the possible ToF-SIMS sputtering artefacts, especially the geometric shadowing effect. Finally, we have explored the combination of ToF-SIMS analysis with three AFM advanced modes: piezoresponse force microcopy (PFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). Specifically, two main applications were studied: the chemical modification during electrical stress of a piezoelectic thin film and the recovery of initial electrical characteristics of a sample subjected to Ga implantation during FIB preparation. Technical aspects of the methodology will be discussed for each application and the perspectives of this combination will be given
Pai-YangTsai und 蔡百揚. „Improvement of Thermal Management in GaN-based Light Emitting Diode Device and Package with Diamond-like Carbon Heat Spreading Layer“. Thesis, 2015. http://ndltd.ncl.edu.tw/handle/90494713260355970624.
Der volle Inhalt der Quelle國立成功大學
微電子工程研究所
104
In this dissertation, the high thermal conductivity and thermal diffusivity of diamond-like carbon (DLC) could reduce the heat crowding phenomenon in the epitaxy layer of light-emitting diodes (LEDs). The performance and reliability of LED devices were damaged or decreased owing to the heat crowding phenomenon, leading to high junction temperature and self-heating effect in the LEDs. At two or three times injection current, the junction temperature of LEDs with DLC heat-spreading layer was decreased more than 5 °C. The relative light intensity was increased by approximately 5% to 10%. The surface temperature distribution of LED with DLC heat-spreading layer was more uniform than that of LED without DLC heat-spreading layer. The thermal diffusivity of Al metal-core printed circuit board (PCB) was increased by using DLC as heat-spreading and insulating layer. Metal core PCB substrate limits thermal dissipation because of the low thermal conductivity of the insulating layer between the Cu circuit and Al substrate. Therefore, heat was crowded under the LED device area and not spread all over the Al substrate area. The DLC heat-spreading layer improved the low thermal conductivity with regular metal core PCB. For the measurement of light intensity droop at the thermal equilibrium, the light intensity of metal core PCB with DLC heat-spreading layer was improved by approximately 7%. The junction temperature was decreased by more than 10 °C. The relative light intensity was improved by 3% after turn-on of 1,000 h. In addition to the heat dissipation capability of LED device and package material, the thermal effect of phosphor material is important in the LED package. The remote phosphor was directly attached to the metal-core printed circuit board (MCPCB), and then the phosphor layer and blue LED chip were separated by air. Therefore, the heat of the blue LED chip was indirectly conducted to the phosphor layer. At high injection current, the light intensity of remote phosphor type was not saturated and droop phenomenon was observed. For the correlated color temperature shift, the remote phosphor type was lower than the conventional phosphor coating technology. The former type can be designed with different shapes for different light pattern applications. This dissertation demonstrated the high efficiency and reliability of white LED light source for the solid-state lighting. This light source is composed of remote phosphor, LEDs, and Al MCPCB with DLC heat-spreading layer.
Sheu, Gwo-jiun, und 許國君. „Electrical Simulation and Current Spreading Analysis in the GaN-based Light-Emitting Diode Devices“. Thesis, 2008. http://ndltd.ncl.edu.tw/handle/22130818217450274401.
Der volle Inhalt der Quelle國立中央大學
機械工程研究所
97
When the chip size of light emitting diodes (LEDs) and the input power become larger, current spreading in the active layer will obviously affect the optical, electrical, and thermal packaging performances of the LED chip. To further understand the current spreading behavior in the active layer, we use a three-dimensional numerical simulation to analyze the electrical characteristic and current distribution of a GaN LEDs device. The results and trends found could serve as useful references for researchers focusing on the design of an LED chip. Employing two-dimensional analysis, in lateral configuration LEDs, the current flows vertically in the p-GaN and active layers, and horizontally in the spreading and n-GaN layers. Therefore, that the current crowding in the active layer would be generated at p- or n-electrodes is mainly dependent on the effect of resistance match between the spreading and n-GaN layers. In addition, the current distribution in the active layer can also obviously affect light extraction efficiency (LEE) and driving voltage. Using three-dimensional analysis, for real cases of side-view LEDs, the driving voltage for the well-designed p- and n-electrode patterns considered in our study can be markedly reduced to around 0.45 V, which corresponds to about 13% decrease in magnitude. The influence of the change in p-electrode pattern on current spreading and voltage drop is more significant than that made by altering the n-electrode pattern for this type of LED. On the other hand, the vertical LEDs with a current blocking layer are also analyzed, it shows that thermal effect in the LED chip should be taken into account and is more obvious in such cases.
Bücher zum Thema "Spreading device"
Fatemi, Navid S. Lateral spreading of Au contacts on InP. [Washington, D.C.]: NASA, 1990.
Den vollen Inhalt der Quelle findenFatemi, Navid S. Lateral spreading of Au contacts on InP. [Washington, D.C.]: NASA, 1990.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Spreading device"
Flanz, Jay. „Beam Spreading Devices“. In Ion Beam Therapy, 417–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21414-1_25.
Der volle Inhalt der QuelleOrlowski, Marius, und William J. Taylor. „New Spreading Resistance Effect For Sub-0.50 µm MOSFETs: Model and Simulation“. In Simulation of Semiconductor Devices and Processes, 159–62. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_37.
Der volle Inhalt der QuelleJain, Deepti, Kamal Lohani, S. K. Mehta, Subodh Chandra, Pramod Kumar, Abhishek Sharma, Deepak Mohanty, Alok Jain und Satish Mohan. „Influence of Lateral Current Spreading on the Characteristics of High Fill Factor Mesa-Stripe Laser Diode Arrays“. In Physics of Semiconductor Devices, 791–94. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_203.
Der volle Inhalt der QuelleP. K., Rajani, Neha Motagi, Komal Nair und Rupali Narayankar. „Autonomous Smart Device for COVID-19 Detection Using Artificial Intelligence“. In Advances in Healthcare Information Systems and Administration, 128–47. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-7998-7709-7.ch008.
Der volle Inhalt der QuelleCorradi, Antonio, Mario Fanelli und Luca Foschini. „Towards Adaptive and Scalable Context Aware Middleware“. In Technological Innovations in Adaptive and Dependable Systems, 21–37. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-4666-0255-7.ch002.
Der volle Inhalt der QuelleFuji, Kei, und Fujio Yoshida. „Mobile Phone-Related Behaviors and Problems in Japan“. In Encyclopedia of Mobile Phone Behavior, 1079–88. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-8239-9.ch088.
Der volle Inhalt der QuelleSwami, Deb Sunder, und Kandarpa Kumar Sarma. „A logistic-Map-Based PN Sequence for Stochastic Wireless Channels“. In Advances in Wireless Technologies and Telecommunication, 155–81. IGI Global, 2017. http://dx.doi.org/10.4018/978-1-5225-2342-0.ch008.
Der volle Inhalt der QuelleMandelli, Elisa. „The Multi-media Museum: The 1960s–70s“. In The Museum as a Cinematic Space, 61–70. Edinburgh University Press, 2019. http://dx.doi.org/10.3366/edinburgh/9781474416795.003.0005.
Der volle Inhalt der QuelleAhmadinia, Ali, und Ahmed Saeed. „Secure Embedded Systems“. In Cyber-Physical Systems for Next-Generation Networks, 207–21. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-5510-0.ch010.
Der volle Inhalt der QuelleIlter, A. Tolga, und Pelin Karacar. „Mobile Technology and Social Media Literacy“. In Advances in Media, Entertainment, and the Arts, 180–96. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1534-1.ch010.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Spreading device"
Chen, Tron-Min, Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Ching-Chung Tsai, Hon-Yi Kou, Wei-Chi Lee und Hon Kuan. „High Power Vertical-structure GaN-based LEDs with Improved Current Spreading and Blocking Designs“. In 65th Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373661.
Der volle Inhalt der QuelleIbe, Eishi, Sung Chung, Shijie Wen, Hironaru Yamaguchi, Yasuo Yahagi, Hideaki Kameyama, Shigehisa Yamamoto und Takashi Akioka. „Spreading Diversity in Multi-cell Neutron-Induced Upsets with Device Scaling“. In IEEE Custom Integrated Circuits Conference 2006. IEEE, 2006. http://dx.doi.org/10.1109/cicc.2006.321010.
Der volle Inhalt der QuelleTadjer, M. J., T. J. Anderson, K. D. Hobart, T. I. Feygelson, M. A. Mastro, J. D. Caldwell, J. K. Hite et al. „Reduced self-heating in ALGaN/GaN HEMTs using nanocrystalline diamond heat spreading films“. In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551873.
Der volle Inhalt der Quelle„The Role of Media Device in Spreading the Legal Culture in Society“. In March 13-15, 2017 Dubai (UAE). HEAIG, 2017. http://dx.doi.org/10.15242/heaig/iah0317531.
Der volle Inhalt der QuelleChuiko, Myroslava, Oleksandr Krynytskyi und Lidiia Vytvytska. „MEASURING DEVICE FOR CONTROL THE SPREADING DEGREE OF LIQUIDS ON SOLID SURFACE“. In RICERCHE SCIENTIFICHE E METODI DELLA LORO REALIZZAZIONE: ESPERIENZA MONDIALE E REALTÀ DOMESTICHE. European Scientific Platform, 2021. http://dx.doi.org/10.36074/logos-14.05.2021.v1.33.
Der volle Inhalt der QuelleZhang, Li, Mingrui Yu, Qiang Guo, Yiming Zhu, Yidan Yuan und Weimin Ma. „Conceptual Design of an Ex-Vessel Melt Cooling Device“. In 2017 25th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/icone25-67190.
Der volle Inhalt der QuelleNazir, Aftab, Pierre Eyben, Trudo Clarysse, Geert Hellings, Andreas Schulze, Jay Mody, Kristin De Meyer und Wilfried Vandervorst. „Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations“. In ESSDERC 2011 - 41st European Solid State Device Research Conference. IEEE, 2011. http://dx.doi.org/10.1109/essderc.2011.6044216.
Der volle Inhalt der QuelleLa Spina, L., L. K. Nanver, H. Schellevis, E. Iborra, M. Clement und J. Olivares. „Characterization of PVD aluminum nitride for heat spreading in RF IC's“. In ESSDERC 2007 - 37th European Solid State Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/essderc.2007.4430951.
Der volle Inhalt der QuelleKai-Shing Yang, Yu-Lieh Wu, Ing-Young Chen und Chi-Chuan Wang. „An investigation of thermal spreading device with thermal via in high power LEDs“. In 2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2009. http://dx.doi.org/10.1109/impact.2009.5382141.
Der volle Inhalt der QuelleAnderson, T. J., J. E. Butler, B. B. Pate, M. J. Tadjer, K. D. Hobart, T. I. Feygelson, J. D. Caldwell et al. „Temperature profiling in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers by Raman spectroscopy“. In 2011 International Semiconductor Device Research Symposium (ISDRS 2011). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135264.
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