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Auswahl der wissenschaftlichen Literatur zum Thema „Specral linewidth“
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Zeitschriftenartikel zum Thema "Specral linewidth"
Wenzel, Hans, Markus Kantner, Mindaugas Radziunas und Uwe Bandelow. „Semiconductor Laser Linewidth Theory Revisited“. Applied Sciences 11, Nr. 13 (28.06.2021): 6004. http://dx.doi.org/10.3390/app11136004.
Der volle Inhalt der QuelleBoller, Klaus-J., Albert van Rees, Youwen Fan, Jesse Mak, Rob Lammerink, Cornelis Franken, Peter van der Slot et al. „Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits“. Photonics 7, Nr. 1 (21.12.2019): 4. http://dx.doi.org/10.3390/photonics7010004.
Der volle Inhalt der QuelleLIN, JIE-LI, YU-YAN LIU, HONG-PING LIU, YUAN-QING QUO, XIAO-YONG LIU, FENG-YAN LI und JIN-RUI LI. „MEASUREMENT OF PRESSURE-BROADENING LINEWIDTHS OF NO FROM THE FITTING OF LMR SPECTRA WITH CORRECTIONS OF INSTRUMENTAL BROADENING“. Modern Physics Letters B 14, Nr. 11 (10.05.2000): 401–7. http://dx.doi.org/10.1142/s0217984900000537.
Der volle Inhalt der QuelleAnikushina, T. A., M. G. Gladush, A. A. Gorshelev und A. V. Naumov. „Single-molecule spectromicroscopy: a route towards sub-wavelength refractometry“. Faraday Discussions 184 (2015): 263–74. http://dx.doi.org/10.1039/c5fd00086f.
Der volle Inhalt der QuelleMENON, P. SUSTHITHA, KUMARAJAH KANDIAH und SAHBUDIN SHAARI. „VARIATION OF MQW DESIGN PARAMETERS IN A GaAs/InP-BASED LW-VCSEL AND ITS EFFECTS ON THE SPECTRAL LINEWIDTH“. Journal of Nonlinear Optical Physics & Materials 19, Nr. 02 (Juni 2010): 209–17. http://dx.doi.org/10.1142/s0218863510005273.
Der volle Inhalt der QuelleGao, W., Z. W. Lu, W. M. He, Y. K. Dong und W. L. J. Hasi. „Characteristics of amplified spectrum of a weak frequency-detuned signal in a Brillouin amplifier“. Laser and Particle Beams 27, Nr. 3 (24.06.2009): 465–70. http://dx.doi.org/10.1017/s0263034609990164.
Der volle Inhalt der QuelleNguyen, Thanh-Phuong, Hans Wenzel, Olaf Brox, Frank Bugge, Peter Ressel, Max Schiemangk, Andreas Wicht, Tran Quoc Tien und Günther Tränkle. „Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power“. Applied Sciences 8, Nr. 7 (09.07.2018): 1104. http://dx.doi.org/10.3390/app8071104.
Der volle Inhalt der QuelleKunii, T., und Y. Matsui. „Narrow spectral linewidth semiconductor lasers“. Optical and Quantum Electronics 24, Nr. 7 (Juli 1992): 719–35. http://dx.doi.org/10.1007/bf00620152.
Der volle Inhalt der QuelleTADA, K., A. YAMANAKA und N. KARASAWA. „BROADBAND COHERENT ANTI-STOKES RAMAN SCATTERING MICROSPECTROSCOPY USING THE SOLITON PULSES FROM A PHOTONIC CRYSTAL FIBER — OBSERVATION OF RAMAN LINE IN DIAMOND POWDERS“. Journal of Nonlinear Optical Physics & Materials 19, Nr. 04 (Dezember 2010): 723–28. http://dx.doi.org/10.1142/s0218863510005649.
Der volle Inhalt der QuelleWeng, Hai-Zhong, Yong-Zhen Huang, Xiu-Wen Ma, Fu-Li Wang, Ming-Long Liao, Yue-De Yang und Jin-Long Xiao. „Spectral Linewidth Analysis for Square Microlasers“. IEEE Photonics Technology Letters 29, Nr. 22 (15.11.2017): 1931–34. http://dx.doi.org/10.1109/lpt.2017.2752232.
Der volle Inhalt der QuelleDissertationen zum Thema "Specral linewidth"
Beneš, Pavel. „Měření základních parametrů optických a optoelektronických komponent“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442446.
Der volle Inhalt der QuelleTavenner, Kruger Sasha Dawn. „Homogeneous linewidth and spectral diffusion in semiconductor nanocrystals /“. view abstract or download file of text, 2006. http://proquest.umi.com/pqdweb?did=1251884311&sid=3&Fmt=2&clientId=11238&RQT=309&VName=PQD.
Der volle Inhalt der QuelleTypescript. Includes vita and abstract. Includes bibliographical references (leaves 164-170). Also available for download via the World Wide Web; free to University of Oregon users.
Lynch, Richard James. „Investigation into the spectral linewidth of InGaN LEDs“. Thesis, University of Sheffield, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.420843.
Der volle Inhalt der QuelleFlint, Nicholas John. „A study of linewidth variation in the E.S.R. spectra of some radical anions“. Thesis, Lancaster University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329999.
Der volle Inhalt der QuelleHsu, Long. „Wavelength dependence of the spectral linewidth of a grating-tuned CW single-frequency external-cavity strained quantum well InGaAs/AlGaAs Grinsch diode laser“. Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/28059.
Der volle Inhalt der QuelleDuan, Jianan. „Dynamic and nonlinear properties of quantum dot lasers for photonic integrated circuits on silicon“. Electronic Thesis or Diss., Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLT050.
Der volle Inhalt der QuelleSilicon photonics have been introduced to overcome low efficiency and high energy consumption of telecom links using twisted pairs or coaxial cables. This technology provides novel functionality and high performance for applications in high speed communication systems, short reach optical interconnects, and the deployment of optical links from chipto-chip, board-to-board or rack-to-rack (datacom). Silicon is known as a very efficient semiconductor material for waveguiding light in particular owing to the strong index contrast with silica. However, the indirect bandgap of silicon makes light emission from silicon inefficient, and other techniques such as wafer- or flipchip bonding must be investigated if light emission is to be realized. The drawbacks of such heterogeneous integration concentrate on the high cost and the limited scalability. Lasers heterogeneously integrated on silicon are also more sensitive to optical reflections originating from the transition between passive/active interfaces. The best way to overcome these drawbacks is to move on to direct epitaxial growth of IIIV materials on silicon for photonics integration. In this context, quantum dot lasers using semiconductor atoms as a gain medium are ideal because they enable smaller devices, amplification with large thermal stability and high tolerance to epitaxial defects. Ultra-low noise optical transmitters are required not only for the coherent systems but also for future chipscale atomic clocks and radar related applications because of the sensitivity to the frequency noise and intensity noise can strongly affect the bit error rates. To this end, the first part of the thesis reports an intrinsic spectral linewidth as low as 80 kHz and a relative intensity noise less than - 150 dB/Hz in InAs/InP quantum dot lasers. In particular, it is shown that a small vertical coupling is more suitable for low intensity noise operation due to the suppression of the carrier noise in the excited state. The second part of the thesis investigates the dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon. As mentioned above, lasers heterogeneously integrated on silicon are more sensitive to parasitic reflections. When combined with external optical feedback, the laser stability can be dramatically affected. As no on-chip optical isolators integrated with lasers and having sufficient isolation ratio exist, the development of feedback insensitive transmitters remains a major objective. This thesis presents an error-free transmission of an epitaxial quantum dot laser on silicon externally modulated at 10 Gb/s and subjected to 100% optical feedback. Such remarkable feedback insensitivity directly results from the near-zero linewidth enhancement factor, the large damping factor, the strong contrast between the ground state and excited states and a shorter carrier lifetime. These results pave the way for future high-performance photonics integrated circuits on silicon operating without optical isolators
Sahni, Mohamed Omar. „Contribution à l'étude de techniques pour l'affinement spectral de lasers : application aux diodes à blocage de modes destinées aux télécommunications optiques cohérentes“. Thesis, Rennes 1, 2018. http://www.theses.fr/2018REN1S121/document.
Der volle Inhalt der QuelleOptical frequency combs obtained from mode-locked laser diodes are potential candidates for WDM networks. However, their lines exhibit usually a broad optical linewidth ( 1-100 MHz). Thus their use is incompatible for high order modulation formats WDM based systems. This thesis investigates one solution to overcome this limitation. It consists of using a feed-forward heterodyne technique to reduce the frequency noise of each comb-line and consequently their optical linewidths. In a first approach, the technique is applied to a single-mode laser. This allowed us to validate its proper working and to identify the intrinsic limits of the experimental device set up. The latter analysis enabled us to reveal that the minimum achievable frequency noise level by our system, corresponds to a 50 Hz intrinsic optical linewidth spectrum and a 1,6 kHz optical linewidth based on 10 ms observation time. This technique is then applied to an actively mode-locked laser diode demonstrating, at our system output, a 21-line optical frequency comb with intrinsic optical linewidths reduced to below 7 kHz. It is worth noting that 9 among them, exhibit sub-kHz linewidths. For an observation time of 10 ms, all lines share the same optical linewidth, almost equal to 37 kHz. We thus show that the timing jitter impacts the technique performances. We also highlight the relevance of such coherence level for coherent optical communication. Lastly, we study a laser frequency pre-stabilization technique based on a locking to an unbalanced fiber interferometer. When applied to a single-mode laser, the technique showed a reduction of its technical frequency noise, thus leading to a clear improvement of its integrated optical linewidth from 224 kHz to 37 kHz for 3 ms observation time. This first result provides a good support towards the exploration of mode-locked laser diodes potential for metrological applications
Wu, Han-Wei, und 吳涵暐. „Investigation of the linewidth reduction effect of Photoluminescence spectra from silicon nanostructures“. Thesis, 2005. http://ndltd.ncl.edu.tw/handle/59324075577207535705.
Der volle Inhalt der Quelle國立臺灣大學
光電工程學研究所
94
Silicon light source is the most urgently needed device in the VLSI nowadays, and will play an important role in science and in technology. The aim of this thesis is to research through what mechanism and how the silicon nanostructures affect the luminescence spectra of silicon under low temperature. Nanostructures on silicon are found to contribute to the reduction of the linewidth of its photoluminescence (PL) spectrum under low temperature. We created variant silicon nanostructures on the surface silicon wafer, inclusive of silicon nanopillar structure and silicon nanoparticles layer. The effects of the devices with silicon nanostructures are suspected to the reduct of the linewidth, to increase the relaxation time of excitons and to lower the energy of continuum excitons after theoretical simulation. In addition, excitons are bosons and obey the Bose-Einstein distribution, thus under low temperature and the carrier confinement effects of the nanostructures, mass excitons will concentrate at the lowest energy level. The linewidth reduction effect might take place and the excitons might concentrate at higher temperature under the effects of the silicon nanostructures with more compact sizes and more regular arrangement.
Chiang, Chih-Lo, und 江志珞. „Evaluation of quantitative proton MRS analysis of amino acids by simulation of different levels of noise and spectral linewidth“. Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6b66s7.
Der volle Inhalt der Quelle國立中山大學
資訊工程學系研究所
102
Magnetic resonance imaging (MRI), a noninvasive technique, is broadly applied on clinical diagnosis now. Magnetic resonance spectroscopy (MRS), a method derived from MRI, can provide precise information for investigating metabolites in vivo for human beings, especially the clinical applications on brain tumors and pyogenic abscesses. In this study, we used LCModel to analyze in vivo proton MR spectra. It is a simple and reliable post-processing tool, which can provide objective quantitative analysis of metabolite concentration. Our purpose is evaluating accuracy of LCModel, while it analyzes amino acids spectrum by changing different linewidth of spectra and different level of noises. Lactate, cytosolic amino acids, alanine and acetate have been recognized as potential abscess markers, especially amino acids. In this thesis, we obtained the magnetic resonance spectra by GAVA simulation and then processed the concentration analysis on amino acids. However, some factors would disturb the analysis of in vivo proton MRS. In this study, we investigated the accuracy using LCModel to analyze amino acids spectrum. Firstly, we changed spectral linewidth by full width at half maximum (FWHM). Secondly, different levels of noises were added into those simulated spectra. Finally, we investigated how the FWHM spectral linewidth and signal noise affected the result of quantitative analysis and metabolite detection. The results shows that we are able to evaluate whether the analyzed-results is reliable or not, by finding the lower bound of signal to noise ratio in simulation. It also indicates that Lactate affected by the control variables the most, while amino acids affected the less. In this experiment, our goal is to find the criteria of reliable quantification with LCModel on detecting lactate, cytosolic amino acids, alanine and acetate, in order to contribute in clinical applications on abscesses patients.
Adithya, Lakshmanna Y. „Ultrafast Raman Loss Spectroscopy (URLS) : Understanding Resonant Excitation Response And Linewidth Changes“. Thesis, 2012. http://etd.iisc.ernet.in/handle/2005/2505.
Der volle Inhalt der QuelleBücher zum Thema "Specral linewidth"
Potzick, James E. Antireflecting-chromium linewidth standard, SRM 473, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Den vollen Inhalt der Quelle findenPotzick, James E. Antireflecting-chromium linewidth standard, SRM 473, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Den vollen Inhalt der Quelle findenPotzick, James E. Antireflecting-chromium linewidth standard, SRM 473, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Den vollen Inhalt der Quelle findenPotzick, James E. Antireflecting-chromium linewidth standard, SRM 473, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Den vollen Inhalt der Quelle findenPotzick, James E. Antireflecting-chromium linewidth standard, SRM 473, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.
Den vollen Inhalt der Quelle findenVezzetti, Carol F. Antireflecting-chromium linewidth standard, SRM 475, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1992.
Den vollen Inhalt der Quelle findenVezzetti, Carol F. Antireflecting-chromium linewidth standard, SRM 475, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1992.
Den vollen Inhalt der Quelle findenVezzetti, Carol F. Antireflecting-chromium linewidth standard, SRM 475, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1992.
Den vollen Inhalt der Quelle findenVezzetti, Carol F. Antireflecting-chromium linewidth standard, SRM 475, for calibration of optical microscope linewidth measuring systems. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1992.
Den vollen Inhalt der Quelle findenVezzetti, Carol F. Antireflecting-Chromium linewidth standard, SRM 475, for calibration of optical microscope linewidth measuring systems. Gaithersburg, Md: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1992.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Specral linewidth"
Harrison, J., und A. Mooradian. „Spectral Linewidth of Semiconductor Lasers“. In Methods of Laser Spectroscopy, 133–42. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-9459-8_19.
Der volle Inhalt der QuelleMacfarlane, R. M. „Optical Spectral Linewidths in Solids“. In Lasers, Spectroscopy and New Ideas, 205–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-540-47872-0_14.
Der volle Inhalt der QuelleGuilbaud, O., J. P. Goddet, S. Sebban, D. Joyeux, D. Ros, J. Gautier, K. Cassou et al. „Temporal Coherence and Spectral Linewidth of a Seeded Soft X-Ray Laser Pulse“. In Springer Proceedings in Physics, 193–98. Dordrecht: Springer Netherlands, 2009. http://dx.doi.org/10.1007/978-1-4020-9924-3_22.
Der volle Inhalt der QuelleLopes, L. C., und B. Coqblin. „Linewidths in Neutron Scattering Spectra of Non-Cubic Cerium Kondo Compounds“. In Theoretical and Experimental Aspects of Valence Fluctuations and Heavy Fermions, 609–12. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-0947-5_102.
Der volle Inhalt der QuelleUrbanski, L., M. C. Marconi, L. M. Meng, M. Berrill, O. Guilbaud, A. Klisnick und J. J. Rocca. „Spectral Linewidth Measurement of a Ne-Like Ar Capillary Discharge Soft X-Ray Laser“. In Springer Proceedings in Physics, 257–61. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00696-3_41.
Der volle Inhalt der QuelleGentry, W. Ronald. „Interpretation of Linewidths in the Infrared Photodissociation Spectra of Van Der Waals Molecules“. In Structure and Dynamics of Weakly Bound Molecular Complexes, 467–75. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3969-1_32.
Der volle Inhalt der QuelleMeng, L., A. Klisnick, M. Kozlova, K. Bohacek, M. Krus, J. Prokupek, L. Urbanski et al. „Temporal Coherence and Spectral Linewidth of Neon-Like XUV Lasers Pumped in the Quasi-steady State Regime“. In Springer Proceedings in Physics, 175–80. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00696-3_28.
Der volle Inhalt der QuelleYahya, Mondher, Faouzi Hosni und Ahmed Hichem Hamzaoui. „Synthesis and ESR Study of Transition from Ferromagnetism to Superparamagnetism in La0.8Sr0.2MnO3 Nanomanganite“. In Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.89951.
Der volle Inhalt der QuelleHerbert, Bruce E., und Paul M. Bertsch. „A 19F and 2H NMR Spectroscopic Investigation of the Interaction Between Nonionic Organic Contaminants and Dissolved Humic Material“. In Nuclear Magnetic Resonance Spectroscopy in Environment Chemistry. Oxford University Press, 1997. http://dx.doi.org/10.1093/oso/9780195097511.003.0009.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Specral linewidth"
Shapiro, D. A. „Universal Scaling of Linewidth for Keilson—Storer Model“. In SPECTRAL LINE SHAPES. AIP, 2002. http://dx.doi.org/10.1063/1.1525479.
Der volle Inhalt der QuelleKawachi, Tetsuya. „Measurement of wavelength and linewidth of transient collisional x-ray lasers“. In SPECTRAL LINE SHAPES. AIP, 2002. http://dx.doi.org/10.1063/1.1525487.
Der volle Inhalt der QuelleRöser, H. P. „Spectral linewidth of p-type Germanium laser“. In 15th International Conference on Infrared and Millimeter Waves. SPIE, 1990. http://dx.doi.org/10.1117/12.2301651.
Der volle Inhalt der QuelleMATSUI, YASUSHI, JUN OHYA, MASATO ISHINO, HISANAO SATO, HIROYUKI SERIZAWA und TAKAO KAJIWARA. „Narrow spectral linewidth integrated-passive-cavity laser“. In Optical Fiber Communication Conference. Washington, D.C.: OSA, 1988. http://dx.doi.org/10.1364/ofc.1988.thk7.
Der volle Inhalt der QuelleSpillman, Jr., W. B., D. R. Patriquin und B. R. Kline. „Spectral Linewidth Dependence of Photoelastic Sensor Performance“. In 29th Annual Technical Symposium. SPIE, 1986. http://dx.doi.org/10.1117/12.949779.
Der volle Inhalt der QuelleMawatari, Hiroyasu, Fumiyoshi Kano, Norio Yamamoto, Yasuhiro Kondo, Yuichi Tohmori und Yuzo Yoshikuni. „Spectral Linewidth and Linewidth Enhancement Factor in 1.5μm Modulation-Doped Strained MQW Lasers“. In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.d-7-1.
Der volle Inhalt der QuelleNarducci, Lorenzo M., Christoph H. Keitel, Gian Luca Oppo und Marlan O. Scully. „Subnatural linewidth in large optical fields“. In Proceedings of the 12th International conference on spectral line shapes. AIP, 1995. http://dx.doi.org/10.1063/1.47506.
Der volle Inhalt der QuelleColeman, J. J., N. L. Dias und U. Reddy. „Narrow spectral linewidth surface grating DBR diode lasers“. In 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC). IEEE, 2012. http://dx.doi.org/10.1109/islc.2012.6348390.
Der volle Inhalt der QuelleMATSUI, Yasushi, Masato ISHINO, Toshihiro FUJITA und Hiroyuki SERIZAWA. „Optical Directional Coupler for Narrow Spectral Linewidth Light“. In 1985 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1985. http://dx.doi.org/10.7567/ssdm.1985.b-1-8.
Der volle Inhalt der QuelleDeng Pan, Yaping Liu, A. E. Willner, Changjian Ke, Deming Liu und Songnian Fu. „Laser Spectral Linewidth Suppression Scheme for Coherent Detection“. In 39th European Conference and Exhibition on Optical Communication (ECOC 2013). Institution of Engineering and Technology, 2013. http://dx.doi.org/10.1049/cp.2013.1565.
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