Auswahl der wissenschaftlichen Literatur zum Thema „Spacers gate“
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Zeitschriftenartikel zum Thema "Spacers gate"
Weng, Chun Jen. „Etching Effects of Nanotechnology Fabrication on CMOS Transistor Gate Wafer Manufacturing Process Integration“. Advanced Materials Research 154-155 (Oktober 2010): 938–41. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.938.
Der volle Inhalt der QuelleWeng, Chun Jen. „Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration“. Applied Mechanics and Materials 83 (Juli 2011): 91–96. http://dx.doi.org/10.4028/www.scientific.net/amm.83.91.
Der volle Inhalt der QuelleWylie, Ian W., und N. Garry Tarr. „A new approach to gate/n− overlapped lightly doped drain structures: added gate after implantation of n− (AGAIN)“. Canadian Journal of Physics 69, Nr. 3-4 (01.03.1991): 174–76. http://dx.doi.org/10.1139/p91-027.
Der volle Inhalt der QuelleKumar, Padakanti Kiran, Bukya Balaji und Karumuri Srinivasa Rao. „Design and analysis of asymmetrical low-k source side spacer halo doped nanowire metal oxide semiconductor field effect transistor“. International Journal of Electrical and Computer Engineering (IJECE) 13, Nr. 3 (01.06.2023): 3519. http://dx.doi.org/10.11591/ijece.v13i3.pp3519-3529.
Der volle Inhalt der QuelleWostyn, Kurt, Karine Kenis, Hans Mertens, Adrian Vaisman Chasin, Andriy Hikavyy, Frank Holsteyns und Naoto Horiguchi. „Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer“. Solid State Phenomena 282 (August 2018): 126–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.126.
Der volle Inhalt der QuelleGuo, Mengxue, Weifeng Lü, Ziqiang Xie, Mengjie Zhao, Weijie Wei und Ying Han. „Effects of Symmetric and Asymmetric Double-Layer Spacers on a Negative-Capacitance Nanosheet Field-Effect Transistor“. Journal of Nanoelectronics and Optoelectronics 17, Nr. 6 (01.06.2022): 873–82. http://dx.doi.org/10.1166/jno.2022.3266.
Der volle Inhalt der QuelleDurfee, Curtis, Ivo Otto IV, Subhadeep Kal, Shanti Pancharatnam, Matthew Flaugh, Toshiki Kanaki, Matthew Rednor et al. „Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors“. ECS Transactions 112, Nr. 1 (29.09.2023): 45–52. http://dx.doi.org/10.1149/11201.0045ecst.
Der volle Inhalt der QuelleConvertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund und Lukas Czornomaz. „InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities“. Materials 12, Nr. 1 (27.12.2018): 87. http://dx.doi.org/10.3390/ma12010087.
Der volle Inhalt der QuelleLi, Junjie, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du et al. „Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors“. Nanomaterials 10, Nr. 4 (20.04.2020): 793. http://dx.doi.org/10.3390/nano10040793.
Der volle Inhalt der QuelleBacquié, Valentin, Aurélien Tavernier, François Boulard, Olivier Pollet und Nicolas Possémé. „Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devices“. Journal of Vacuum Science & Technology A 39, Nr. 3 (Mai 2021): 033005. http://dx.doi.org/10.1116/6.0000871.
Der volle Inhalt der QuelleDissertationen zum Thema "Spacers gate"
Jaffal, Moustapha. „Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique“. Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.
Der volle Inhalt der QuelleOver the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
Bertram, David. „Game-Space“. Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31140.
Der volle Inhalt der QuelleMaster of Architecture
Calderon, Ana C. M. A. „Understanding game semantics through coherence spaces“. Thesis, University of Bath, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.580675.
Der volle Inhalt der QuelleBalog, Michael Rosen Warren A. „The automated compilation of comprehensive hardware design search spaces of algorithmic-based implementations for FPGA design exploration /“. Philadelphia, Pa. : Drexel University, 2007. http://hdl.handle.net/1860/1770.
Der volle Inhalt der QuelleBendele, Rigby L. „NEGOTIATING MASCULINITY IN TABLETOP ROLEPLAYING GAME SPACES“. VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/5805.
Der volle Inhalt der QuelleMeldgaard, Betty Li. „Perception, action, and game space“. Universität Potsdam, 2008. http://opus.kobv.de/ubp/volltexte/2008/2462/.
Der volle Inhalt der QuelleBrown, Eric L. „A quadratic partial assignment and packing model and algorithm for the airline gate assignment problem“. Thesis, This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-07212009-040541/.
Der volle Inhalt der QuelleGingold, Chaim. „Miniature gardens and magic crayons : games, spaces and worlds“. Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17671.
Der volle Inhalt der QuelleEbert, Dean A. „Design and development of a configurable fault-tolerant processor (CFTP) for space applications“. Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2003. http://library.nps.navy.mil/uhtbin/hyperion-image/03Jun%5FEbert.pdf.
Der volle Inhalt der QuelleThesis advisor(s): Herschel H. Loomis, Alan A. Ross. Includes bibliographical references (p. 219-224). Also available online.
Humberd, Caleb J. „A compression algorithm for field programmable gate arrays in the space environment“. Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/10623.
Der volle Inhalt der QuelleBücher zum Thema "Spacers gate"
Linda, Evans, Hrsg. Hell's gate. Riverdale, NY: Baen, 2006.
Den vollen Inhalt der Quelle findenMarroquin-Burr, Kristina. Learn to draw Angry Birds space. [Irvine, Calif.]: Walter Foster Pub., Inc., 2013.
Den vollen Inhalt der Quelle findenChampion, Jill. The official guide to Roger Wilco's space adventures. 2. Aufl. Greensboro, N.C: Compute Books, 1993.
Den vollen Inhalt der Quelle findenC, Leinecker Richard, Hrsg. The official guide to Roger Wilco's space adventures. Greensboro, N.C: Compute Books, 1991.
Den vollen Inhalt der Quelle findenJohn, Peel. Where in space is Carmen Sandiego? Racine, Wis: Western Pub. Co., 1993.
Den vollen Inhalt der Quelle findenBarham, Pamela. Winning space: Game strategies for netball. [U.K.]: Network Coaching International, 1994.
Den vollen Inhalt der Quelle finden1959-, Maas Winy, MVRDV (Firm), Delft School of Design, Berlage Instituut, Massachusetts Institute of Technology und cThrough (Firm), Hrsg. Space fighter: The evolutionary city (game:). Barcelona: Actar, 2007.
Den vollen Inhalt der Quelle findenKahn, Charles M. The good, the bad, and the ugly: Coalition proof equilibrium in games with infinite strategy spaces. [Urbana, Ill.]: College of Commerce and Business Administration, University of Illinois at Urbana-Champaign, 1989.
Den vollen Inhalt der Quelle findenErikson, Steven. Deadhouse gates. New York: Tor, 2005.
Den vollen Inhalt der Quelle findenErikson, Steven. Deadhouse Gates. London: Transworld, 2009.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Spacers gate"
Jungkeit, Steven R. „The Infinite Gaze“. In Spaces of Modern Theology, 41–81. New York: Palgrave Macmillan US, 2012. http://dx.doi.org/10.1057/9781137269027_2.
Der volle Inhalt der QuelleKaushik, Brajesh Kumar, Sudeb Dasgupta und Pankaj Kumar Pal. „Tri-Gate FinFET Technology and Its Advancement“. In Spacer Engineered FinFET Architectures, 11–36. Boca Raton : Taylor & Francis, CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315191089-2.
Der volle Inhalt der QuelleCaracciolo, Marco. „Game Space“. In On Soulsring Worlds, 26–41. London: Routledge, 2024. http://dx.doi.org/10.4324/9781032684024-3.
Der volle Inhalt der QuelleRiviere, Alex. „Space“. In Game Audio Mixing, 110–20. London: Focal Press, 2023. http://dx.doi.org/10.4324/9781003351146-10.
Der volle Inhalt der QuelleSanliturk, Cagri. „Game of being state“. In Civic Spaces and Desire, 68–81. New York : Routledge, 2019.: Routledge, 2019. http://dx.doi.org/10.4324/9781351184137-5.
Der volle Inhalt der QuelleYoung, Anthony. „Game Changer: SpaceX“. In The Twenty-First Century Commercial Space Imperative, 15–28. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18929-1_2.
Der volle Inhalt der QuelleEspinola-Arredondo, Ana, und Felix Muñoz-Garcia. „Nash Equilibria in Games with Continuous Action Spaces“. In Game Theory, 77–103. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-37574-3_4.
Der volle Inhalt der QuelleLeeney, Cathy, und Deirdre McFeely. „Social Class, Space, and Containment in 1950s Ireland“. In The Golden Thread, 233–56. Liverpool University Press, 2021. http://dx.doi.org/10.3828/liverpool/9781800859463.003.0018.
Der volle Inhalt der Quelle„Video/Game“. In Architectonics of Game Spaces, 71–84. transcript-Verlag, 2019. http://dx.doi.org/10.14361/9783839448021-005.
Der volle Inhalt der QuelleBinotto, Johannes. „Video/Game“. In Architectonics of Game Spaces, 71–84. transcript Verlag, 2019. http://dx.doi.org/10.1515/9783839448021-005.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Spacers gate"
Dhiman, Gaurav, und Rajeev Pourush. „Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers“. In 2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3). IEEE, 2020. http://dx.doi.org/10.1109/iconc345789.2020.9117425.
Der volle Inhalt der QuelleKola, Sekhar Reddy, Yiming Li- und Narasimhulu Thoti. „Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers“. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241603.
Der volle Inhalt der QuelleSachid, Angada B., Roswald Francis, Maryam Shojaei Baghini, Dinesh K. Sharma, Karl-Heinz Bach, Reinhard Mahnkopf und V. Ramgopal Rao. „Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?“ In 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796790.
Der volle Inhalt der QuelleMalviya, Abhishek Kumar, und R. K. Chauhan. „Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers“. In 2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT). IEEE, 2017. http://dx.doi.org/10.1109/icetcct.2017.8280327.
Der volle Inhalt der QuelleMiyashita, T., K. Ookoshi, A. Hatada, K. Ikeda, Y. S. Kim, M. Nishikawa, T. Sakoda, K. Hosaka und H. Kurata. „Design and Optimization of Gate Sidewall Spacers to Achieve 45nm Ground Rule for High-performance Applications“. In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.b-5-1.
Der volle Inhalt der QuelleGong, Jun-Wei, Yeh-Chang Fang, Ta-Yung Wang, Jia-Rui Hu, Chung-I. Chang, Shih-Jung Lee und Jon Opsal. „Thickness and Topography of Dielectric Dual-Sidewall Spacers on Metal Gate of DRAM Extracted by Spectroscopic Ellipsometry“. In 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference. IEEE, 2007. http://dx.doi.org/10.1109/asmc.2007.375115.
Der volle Inhalt der QuelleYang, Z. Y., Y. A. Huang, H. C. Lin, P. W. Li, K. M. Chen und G. W. Huang. „Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications“. In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421455.
Der volle Inhalt der QuelleYou, W. X., und P. Su. „Investigation of Gate-Length Dependence of Memory Window for 2D Ferroelectric-FET NVMs Considering the Impact of Spacers“. In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.m-4-04.
Der volle Inhalt der QuelleKaur, Prabhjot, Sandeep Singh Gill und Navneet Kaur. „Performance Analysis of Junction Less Accumulation Mode (JAM) Bulk FinFETs Using Dual- K Spacers at 15nm Gate Length“. In 2018 2nd International Conference on Trends in Electronics and Informatics (ICOEI). IEEE, 2018. http://dx.doi.org/10.1109/icoei.2018.8553706.
Der volle Inhalt der QuelleHuang, Po-Yen, Xue-Han Chen, Haoran Wang, Shawn S. H. Hsu und Roy K. Y. Wong. „Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers“. In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024. http://dx.doi.org/10.1109/ispsd59661.2024.10579584.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Spacers gate"
Aleksandrov, Pavlo. NEWS GAMES IN THE UKRAINIAN MEDIA SPACE DURING THE FULL-SCALE RUSSIAN INVASION. Ivan Franko National University of Lviv, März 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12140.
Der volle Inhalt der QuellePtsuty, Norbert, Andrea Habeck und Christopher Menke. Shoreline position and coastal topographical change monitoring at Gateway National Recreation Area: 2017–2022 and 2007–2022 trend report. National Park Service, August 2023. http://dx.doi.org/10.36967/2299536.
Der volle Inhalt der QuelleDatsyshyn, Chrystyna. FUNCTIONAL PARAMETERS OF ANTHROPONYM AS ONE OF THE VARIETIES OF FACTUAL MATERIAL IN THE MEDIA TEXT. Ivan Franko National University of Lviv, März 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12169.
Der volle Inhalt der QuelleKourkoutas, Konstantinos, Begonya Saez, Veronica Junjan, Anders Riel Müller, Wiro Kuipers, Fabio Hernández Palacio, Kristiane Marie Fjær Lindland, Tina-Simone Neset und Sara Malmgren. ECIU Position Paper on Living Labs and Experimentation Spaces: Recommendations and insights about the potential of Living Labs as innovation and learning platforms in the ECIU University. University of Stavanger, April 2024. http://dx.doi.org/10.31265/usps.276.
Der volle Inhalt der QuelleDudoit, Alain. The urgency of the first link: Canada’s supply chain at breaking point, a national security issue. CIRANO, Juli 2023. http://dx.doi.org/10.54932/cxwf7311.
Der volle Inhalt der QuelleSlotiuk, Tetiana. CONCEPT OF SOLUTIONS JOURNALISM MODEL: CONNOTION, FUNCTIONS, FEATURES OF FUNCTIONING. Ivan Franko National University of Lviv, März 2021. http://dx.doi.org/10.30970/vjo.2021.50.11097.
Der volle Inhalt der QuelleDemchenko, Dmytro. DEMASSIFICATION OF SOCIAL PROCESSES IN THE CONTEXT OF DIGITAL COMMUNICATION (TO THE PROBLEM OF THE DICHOTOMY OF “ELITE-MASS” AS A POLITICAL COMMUNICATION PARADOX). Ivan Franko National University of Lviv, März 2024. http://dx.doi.org/10.30970/vjo.2024.54-55.12171.
Der volle Inhalt der QuelleLevantovych, Oksana. COVID 19 MEDIA COVERAGE: AN ANALYSIS OF HEORHII POCHEPTSOV’S VIEW. Ivan Franko National University of Lviv, Februar 2021. http://dx.doi.org/10.30970/vjo.2021.49.11061.
Der volle Inhalt der QuelleYatsymirska, Mariya. SOCIAL EXPRESSION IN MULTIMEDIA TEXTS. Ivan Franko National University of Lviv, Februar 2021. http://dx.doi.org/10.30970/vjo.2021.49.11072.
Der volle Inhalt der QuelleOpening the gate: A resource to support Victorian schools to activate school grounds and open spaces for community use. VicHealth, September 2024. http://dx.doi.org/10.37309/2023.pa1068.
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