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Thematische Bibliographien / Space charge doping

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Zeitschriftenartikel

Auswahl der wissenschaftlichen Literatur zum Thema „Space charge doping“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

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Zeitschriftenartikel zum Thema "Space charge doping"

1

Liu, Peng, Xi Pang, Zongliang Xie, et al. "Space charge characteristics in epoxy/nano-MgO composites: Experiment and two-dimensional model simulation." Journal of Applied Physics 132, no. 16 (2022): 165501. http://dx.doi.org/10.1063/5.0104268.

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Space charge accumulation in polymer dielectrics may lead to serious electric field distortion and even insulation failure during long-term operations of power equipment and electronic devices, especially under conditions of high temperature and direct current electric stress. The addition of nanoparticles into polymer matrices has been found effective in suppressing space charge accumulation and alleviating electric field distortion issues. Yet, the underlying mechanisms of nanoparticle doping remain a challenge to explore, especially from multi-dimensional composite insights. Here, a two-dimensional bipolar charge transport model with consideration of interface zones between organic/inorganic phases is proposed for the investigation into space charge behaviors of nanodielectrics. To validate the effectiveness and feasibility of the model, pulsed electroacoustic experiments are performed on epoxy/nano-MgO composites with different doping ratios of nanoparticles. Experimental observations match well with simulation anticipations, i.e., higher doping ratios of nanoparticles below the percolation threshold exhibit better capabilities to inhibit space charge accumulation. The deep traps (∼1.50 eV) generated in the interface zones are demonstrated to capture free charges, forming a reverse electric field in the region adjacent to electrodes and impeding the space charge migration toward the interior of the composite. This model is anticipated to provide theoretical insight for understanding space charge characteristics in polymer nanodielectrics and computing charge dynamics in extreme conditions where experiments are challenging to perform.

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2

Utamuradova, Sh B., and E. M. Naurzalieva. "SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES." SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, no. 2 (2021): 41–46. http://dx.doi.org/10.37681/2181-1652-019-x-2021-2-7.

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The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained

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3

Jin, Xin, and Hai Wang. "Space Charge Limited Current and Magnetoresistance in Si." Advanced Materials Research 750-752 (August 2013): 952–55. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.952.

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Mott and Gurney point out1, for defect-free semiconductors, I-V curve deviates from linear Ohmic type to nonlinear space-charge limited behavior at high electric field. A surprising large magnetoresistance (MR) has been reported in space-charge limited region by Delmo2-4recently. In present work, I-V and MR curves of silicon samples with different doping concentration are measured. It is observed that I-V curve enters into space charge region at lower voltage in heavily doped samples, however, space-charge limited current is absent in lightly doped samples. Two samples show different types of MR curve. In heavily doped samples, 8% MR is acquired at 3kG and the value of MR increases linearly up to 17%, while MR increases slowly up to 11% in lightly doped samples. It is believed that the dopant and trap in N-type silicon has a strong influence on the space-charge limited current and MR.

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4

Chen, Inan. "Theoretical analyses of space-charge doping in amorphous semiconductor superlattices. I. Doping superlattices." Physical Review B 32, no. 2 (1985): 879–84. http://dx.doi.org/10.1103/physrevb.32.879.

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5

Chen, Inan. "Space charge doping effects in amorphous semiconductor multi-layers." Journal of Non-Crystalline Solids 77-78 (December 1985): 1093–96. http://dx.doi.org/10.1016/0022-3093(85)90848-8.

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6

Kabalan, Amal. "Controlling the Doping Depth in Silicon Micropillars." Applied Sciences 10, no. 13 (2020): 4581. http://dx.doi.org/10.3390/app10134581.

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Micropillar arrays with radial p–n junctions are attractive for photovoltaic applications, because the light absorption and carrier collection become decoupled. The main challenge in manufacturing radial p–n junctions is achieving shallow (dopant depth <200 nm) and heavy doping (>1020 cm−3) that will allow the formation of a quasi-neutral region (QNR) and space charge region (SCR) in its tiny geometry. This experimental study investigates an approach that allows shallow and heavy doping in silicon micropillars. It aims to demonstrate that silicon dioxide (SiO2) can be used to control the dopant penetration depth in silicon micropillars.

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7

Vermeersch, Rémy, Gwénolé Jacopin, Bruno Daudin, and Julien Pernot. "DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current." Applied Physics Letters 120, no. 16 (2022): 162104. http://dx.doi.org/10.1063/5.0087789.

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Electrical properties of silicon doped AlN nanowires grown by plasma assisted molecular beam epitaxy were investigated by means of temperature dependent current–voltage measurements. Following an Ohmic regime for bias lower than 0.1 V, a transition to a space-charge limited regime occurred for higher bias. This transition appears to change with the doping level and is studied within the framework of the simplified theory of space-charge limited current assisted by traps. For the least doped samples, a single, doping independent trapping behavior is observed. For the most doped samples, an electron trap with an energy level around 150 meV below the conduction band is identified. The density of these traps increases with a Si doping level, consistent with a self-compensation mechanism reported in the literature. The results are in accordance with the presence of Si atoms that have three different configurations: one shallow state and two DX centers.

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8

Nath, Chandrani, and A. Kumar. "Doping level dependent space charge limited conduction in polyaniline nanoparticles." Journal of Applied Physics 112, no. 9 (2012): 093704. http://dx.doi.org/10.1063/1.4763362.

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9

Ahmad, Ashfaq, Pawel Strak, Pawel Kempisty, et al. "Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality." Journal of Applied Physics 132, no. 6 (2022): 064301. http://dx.doi.org/10.1063/5.0098909.

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In this work, we study the emergence of polarization doping in AlxGa1−xN layers with graded composition from a theoretical viewpoint. It is shown that bulk electric charge density emerges in the graded concentration region. The magnitude of the effect, i.e., the relation between the polarization bulk charge density and the concentration gradient is obtained. The appearance of mobile charge in the wurtzite structure grown along the polar direction was investigated using the combination of ab initio and drift-diffusion models. It was shown that the ab initio results can be recovered precisely by proper parameterization of drift-diffusion representation of the complex nitride system. It was shown that the mobile charge appears due to the increase of the distance between opposite polarization-induced charges. It was demonstrated that, for sufficiently large space distance between polarization charges, the opposite mobile charges are induced. We demonstrate that the charge conservation law applies for fixed and mobile charge separately, leading to nonlocal compensation phenomena involving (i) the bulk fixed and polarization sheet charge at the heterointerfaces and (ii) the mobile band and the defect charge. Therefore, two charge conservation laws are obeyed that induces nonlocality in the system. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.

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10

Peña-Camargo, Francisco, Jarla Thiesbrummel, Hannes Hempel, et al. "Revealing the doping density in perovskite solar cells and its impact on device performance." Applied Physics Reviews 9, no. 2 (2022): 021409. http://dx.doi.org/10.1063/5.0085286.

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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the electrode charge per cell volume under short-circuit conditions ([Formula: see text]), which amounts to roughly 1016 cm−3. This figure of merit represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results consistently demonstrate that the doping density is below this critical threshold (∼1012 cm−3, which means ≪ [Formula: see text]) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift–diffusion simulations, which confirm that the device performance is not affected by such low doping densities.

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