Auswahl der wissenschaftlichen Literatur zum Thema „SOA integrated optics Quantum wells“
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Zeitschriftenartikel zum Thema "SOA integrated optics Quantum wells"
Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon et al. „Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers“. Applied Sciences 11, Nr. 23 (23.11.2021): 11096. http://dx.doi.org/10.3390/app112311096.
Der volle Inhalt der QuelleXiao, Feng, Qin Han, Han Ye, Shuai Wang und Fan Xiao. „InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier“. Japanese Journal of Applied Physics 61, Nr. 1 (01.01.2022): 012005. http://dx.doi.org/10.35848/1347-4065/ac38fb.
Der volle Inhalt der QuelleLi Kam Wa, P. „Intermixing of multiple quantum wells for all-optical integrated circuits“. Optical and Quantum Electronics 23, Nr. 7 (Januar 1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.
Der volle Inhalt der QuelleKowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, Christopher D. Pynn, Robert M. Farrell, James S. Speck, Steven P. DenBaars und Shuji Nakamura. „Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells“. Optics Express 25, Nr. 4 (13.02.2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.
Der volle Inhalt der QuelleLu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, Chieh-Hsiung Kuan, Juei-Yang Feng, Tsong-Sheng Lay, Chen-Wei Yang und Shun-Li Tu. „A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance“. IEEE Journal of Quantum Electronics 43, Nr. 1 (Januar 2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.
Der volle Inhalt der QuelleFeng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama und Hiroshi Ishikawa. „Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch“. Optics Express 21, Nr. 13 (25.06.2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.
Der volle Inhalt der QuelleНовиков, И. И., И. А. Няпшаев, А. Г. Гладышев, В. В. Андрюшкин, А. В. Бабичев, Л. Я. Карачинский, Ю. М. Шерняков et al. „Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм“. Физика и техника полупроводников 56, Nr. 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.
Der volle Inhalt der QuelleZhang, Yi, Jianfeng Gao, Senbiao Qin, Ming Cheng, Kang Wang, Li Kai und Junqiang Sun. „Asymmetric Ge/SiGe coupled quantum well modulators“. Nanophotonics 10, Nr. 6 (19.03.2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.
Der volle Inhalt der QuelleХабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев, Р. Р. Галиев, А. А. Зайцев, А. И. Данилов, И. С. Васильевский et al. „Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K“. Физика и техника полупроводников 55, Nr. 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.
Der volle Inhalt der QuelleShen, Jinyong, Tianyun Zhu, Jing Zhou, Zeshi Chu, Xiansong Ren, Jie Deng, Xu Dai et al. „High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors“. Sensors 23, Nr. 1 (24.12.2022): 168. http://dx.doi.org/10.3390/s23010168.
Der volle Inhalt der QuelleDissertationen zum Thema "SOA integrated optics Quantum wells"
Yu, Shuqi. „Semiconductor optical amplifiers for future telecom system“. Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAS006.
Der volle Inhalt der QuelleThe continuous increase in data transmission demands is compelling optical networks to evolve and enhance their transmission capacity. As the spectral efficiency of optical fibers seems to have reached its limit, one of the best solutions is to extend the spectral bandwidth of optical systems. Considering the demand for large-bandwidth optical amplification systems, we decided to research semiconductor optical amplifiers (SOA) as they offer customized gain and flexible bandwidth expansion, which has good integrability and low cost as well. Historically, SOA faced limitations in terms of noise figures, nonlinear distortions, and polarization sensitivity. However, recent advancements in design have shown promising results, positioning SOAs as viable candidates for future optical transmission solutions. The objective of my thesis is to develop SOAs that mitigate the drawbacks, having a low noise figure and high saturation output power, to make them suitable for using in wide-bandwidth wavelength division multiplexing (WDM) optical networks. In this work, we started with a quick introduction to SOA's basic principles. Then, I demonstrate our three standard designs, measurement results, and improvement ideas, accompanied by a simple model for further optimization. After that, we show some advanced designs and their excellent results. In the end, the application of SOAs in optical transmission systems was explored, highlighting their role in in-line amplifier modules. This research contributes to advancing the understanding and practical application of SOAs in optical communication systems
May-Arrioja, Daniel. „INTEGRATED INP PHOTONIC SWITCHES“. Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3288.
Der volle Inhalt der QuellePh.D.
Other
Optics and Photonics
Optics
Chaisakul, Papichaya. „Ge/SiGe quantum well devices for light modulation, detection, and emission“. Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.
Der volle Inhalt der QuelleLiu, Danyu. „GaAs-based quantum well and quantum dot compact microlasers“. Phd thesis, 2012. http://hdl.handle.net/1885/150426.
Der volle Inhalt der QuelleBücher zum Thema "SOA integrated optics Quantum wells"
R, Adams Alfred, Europtica-Services I. C und Society of Photo-optical Instrumentation Engineers., Hrsg. Quantum wells and superlattices in optoelectronic devices and integrated optics: 17-18 November 1987, Cannes, France. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.
Den vollen Inhalt der Quelle findenAdams, Alfred R. Quantum Wells Superlattices in Optoelectronic Devices and Integrated Optics (Proceedings / SPIE). Society of Photo Optical, 1988.
Den vollen Inhalt der Quelle findenKonferenzberichte zum Thema "SOA integrated optics Quantum wells"
Kost, Alan R., Nayer Eradat, Xiaolan Sun, Espen Selvig, Bjorn-Ove Fimland und David H. Chow. „GaAsSb quantum wells for optoelectronics and integrated optics“. In Frontiers in Optics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/fio.2003.thm4.
Der volle Inhalt der QuelleChoy, Wallace C. H., Jian Jun He, Ming Li, Yan Feng und Emil S. Koteles. „InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators“. In Symposium on Integrated Optics, herausgegeben von Giancarlo C. Righini und Seppo Honkanen. SPIE, 2001. http://dx.doi.org/10.1117/12.426830.
Der volle Inhalt der QuelleMiller, D. A. B. „Physics and Applications of Quantum Wells in Optics“. In Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.
Der volle Inhalt der QuelleQu, Fanyao, N. O. Dantas und P. C. Morais. „Anomalous shift of the recombination energy in single asymmetric quantum wells“. In Symposium on Integrated Optics, herausgegeben von Yasuhiko Arakawa, Peter Blood und Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432619.
Der volle Inhalt der QuellePogossian, Souren P., Adrian P. Vonsovici und Lili Vescan. „(SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs“. In Symposium on Integrated Optics, herausgegeben von David J. Robbins, John A. Trezza und Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426923.
Der volle Inhalt der QuelleMiyamoto, Tomoyuki, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama und Kenichi Iga. „CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers“. In Symposium on Integrated Optics, herausgegeben von Yasuhiko Arakawa, Peter Blood und Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432570.
Der volle Inhalt der QuelleWu, Bing-Ruey, Ching-Fuh Lin, Lih-Wen Laih und Tien-Tsorng Shih. „Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells“. In Symposium on Integrated Optics, herausgegeben von Suning Tang und Yao Li. SPIE, 2001. http://dx.doi.org/10.1117/12.428027.
Der volle Inhalt der QuelleWen, Tzu-Chi, Shih-Chang Lee und Wei-I. Lee. „Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells“. In Symposium on Integrated Optics, herausgegeben von H. Walter Yao und E. F. Schubert. SPIE, 2001. http://dx.doi.org/10.1117/12.426844.
Der volle Inhalt der QuelleSun, Handong, Takayuki Makino, Tien T. Nguyen, Yusaburo Segawa, ZiKang Tang, George K. Wong, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura und Hideomi Koinuma. „Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques“. In Symposium on Integrated Optics, herausgegeben von Ghassan E. Jabbour und Hideomi Koinuma. SPIE, 2001. http://dx.doi.org/10.1117/12.424747.
Der volle Inhalt der QuelleKoren, U., G. Eisenstein, R. S. Tucker, T. L. Koch und B. I. Miller. „Integrated Multiple Quantum Well Lasers and Optical Amplifiers at 1.55 Micron Wavelength“. In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tuc2.
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