Auswahl der wissenschaftlichen Literatur zum Thema „Single-Electron physics“
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Zeitschriftenartikel zum Thema "Single-Electron physics"
Osborne, I. S. „APPLIED PHYSICS: Single-Electron Shuttle“. Science 293, Nr. 5535 (31.08.2001): 1559b—1559. http://dx.doi.org/10.1126/science.293.5535.1559b.
Der volle Inhalt der QuelleKASTNER, M. A. „THE PHYSICS OF SINGLE ELECTRON TRANSISTORS“. International Journal of High Speed Electronics and Systems 12, Nr. 04 (Dezember 2002): 1101–33. http://dx.doi.org/10.1142/s0129156402001940.
Der volle Inhalt der QuelleKastner, M. A., und D. Goldhaber-Gordon. „Kondo physics with single electron transistors“. Solid State Communications 119, Nr. 4-5 (Juli 2001): 245–52. http://dx.doi.org/10.1016/s0038-1098(01)00106-5.
Der volle Inhalt der QuelleKobayashi, Shun-ichi. „Fundamental Physics of Single Electron Transport“. Japanese Journal of Applied Physics 36, Part 1, No. 6B (30.06.1997): 3956–59. http://dx.doi.org/10.1143/jjap.36.3956.
Der volle Inhalt der QuelleDempsey, Kari J., David Ciudad und Christopher H. Marrows. „Single electron spintronics“. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, Nr. 1948 (13.08.2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.
Der volle Inhalt der QuelleSeneor, Pierre, Anne Bernand-Mantel und Frédéric Petroff. „Nanospintronics: when spintronics meets single electron physics“. Journal of Physics: Condensed Matter 19, Nr. 16 (05.04.2007): 165222. http://dx.doi.org/10.1088/0953-8984/19/16/165222.
Der volle Inhalt der QuelleDevoret, Michel H., und Christian Glattli. „Single-electron transistors“. Physics World 11, Nr. 9 (September 1998): 29–34. http://dx.doi.org/10.1088/2058-7058/11/9/26.
Der volle Inhalt der QuelleJamshidnezhad, K., und M. J. Sharifi. „Physics-based analytical model for ferromagnetic single electron transistor“. Journal of Applied Physics 121, Nr. 11 (21.03.2017): 113905. http://dx.doi.org/10.1063/1.4978425.
Der volle Inhalt der QuelleSeike, Kohei, Yasushi Kanai, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue und Kazuhiko Matsumoto. „Carbon nanotube single-electron transistors with single-electron charge storages“. Japanese Journal of Applied Physics 54, Nr. 6S1 (24.04.2015): 06FF05. http://dx.doi.org/10.7567/jjap.54.06ff05.
Der volle Inhalt der QuelleWu Fan und Wang Tai-Hong. „Single-electron control by single-electron pump and its stability diagrams“. Acta Physica Sinica 52, Nr. 3 (2003): 696. http://dx.doi.org/10.7498/aps.52.696.
Der volle Inhalt der QuelleDissertationen zum Thema "Single-Electron physics"
Granger, Ghislain. „Spin effects in single-electron transistors“. Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/32305.
Der volle Inhalt der QuelleIncludes bibliographical references (p. 169-175).
Basic electron transport phenomena observed in single-electron transistors (SETs) are introduced, such as Coulomb-blockade diamonds, inelastic cotunneling thresholds, the spin-1/2 Kondo effect, and Fano interference. With a magnetic field parallel to the motion of the electrons, single-particle energy levels undergo Zeeman splitting according to their spin. The g-factor describing this splitting is extracted in the spin-flip inelastic cotunneling regime. The Kondo splitting is linear and slightly greater than the Zeeman splitting. At zero magnetic field, the spin triplet excited state energy and its dependence on gate voltage are measured via sharp Kondo peaks superimposed on inelastic cotunneling thresholds. Singlet-triplet transitions and an avoided crossing are analyzed with a simple two-level model, which provides information about the exchange energy and the orbital mixing. With four electrons on the quantum dot, the spin triplet state has two characteristic energy scales, consistent with a two-stage Kondo effect description. The low energy scale extracted from a nonequilibrium measurement is larger than those extracted in equilibrium.
by Ghislain Granger.
Ph.D.
Field, Mark. „Single electron effects in semiconductor microstructures“. Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308187.
Der volle Inhalt der QuelleGillingham, David R. „Free electron laser single-particle dynamics theory“. Thesis, Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA246245.
Der volle Inhalt der QuelleThesis Advisor(s): Colson, William B. Second Reader: Maruyama, Xavier K. "December 1990." Description based on title screen as viewed on March 31, 2010. DTIC Identifier(s): Free Electron Lasers, Computerized Simulations, Parmela Computer Programs, Cray Computers, Theses. Author(s) subject terms: Free Electron Lasers, Computerized Simulation. Includes bibliographical references (p. 52-53). Also available in print.
Goldhaber-Gordon, David Joshua 1972. „The Kondo effect in a single-electron transistor“. Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9450.
Der volle Inhalt der QuelleTitle as it appears in MIT commencement exercises program, June 1999, has the added subtitle: Strong coupling and many body effects.
Includes bibliographical references (p. 115-124).
The Kondo effect, which occurs when a metal with magnetic impurities is cooled to low temperatures, has been a focus of research in solid-state physics for several decades. I have designed, fabricated, and measured a system which behaves as a single "artificial" impurity in a metal, displaying the Kondo effect. This so-called Single-Electron Transistor (SET) has several advantages over the classic bulk Kondo systems. Most obviously, only one impurity is involved, so there is no need to worry about interactions between impurities, or different impurities feeling different environments. But even more importantly all the parameters of the system, such as the binding energy of electrons on the impurity and the tunneling rate between metal and impurity, can be tuned in-situ, allowing detailed quantitative comparison to thirty years of theoretical developments whose details could not be tested in previously-studied Kondo systems.
by David Joshua Goldhaber-Gordon.
Ph.D.
Foxman, Ethan Bradley 1966. „Single electron charging and quantum effects in semiconductor nanostructures“. Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/72770.
Der volle Inhalt der QuelleDial, Oliver Eugene III. „Single particle spectrum of the two dimensional electron gas“. Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/45158.
Der volle Inhalt der QuelleThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 251-265).
Accurate spectroscopy has driven advances in chemistry, materials science, and physics. However, despite their importance in the study of highly correlated systems, two-dimensional systems (2DES) have proven difficult to probe spectroscopically. Typical energy scales are on the order of a millielectron volt (meV), requiring high resolution, while correlated states of interest, such as those found in the integer and fractional quantum Hall effect, are destroyed by excessive electron heating. Approaches based on tunneling have been hampered by problems such as ohmic heating and low in-plane conductivity, while optical approaches probe long-wavelength excitations which can be difficult to interpret. Here we present a refined spectroscopic technique, time domain capacitance spectroscopy (TDCS), with which we measure the single particle density of states (DOS) of a 2DES with temperature-limited resolution. In TDCS, sharp voltage pulses disequilibrate a metallic contact from a nearby 2DES, inducing a tunnel current. We detect this current by monitoring the image charge of the tunneled electrons on a distant electrode. No ohmic contact to the 2DES is required. The technique works when the 2DES is empty or has vanishing in-plane conductivity, as frequently occurs in studying the quantum Hall effect. Using TDCS, we perform unprecedentedly high resolution measurements of the DOS of a cold 2DES in GaAs over a range from 15 meV above to 15 meV below the Fermi surface. We provide the first direct measurements of the width of the single-particle exchange gap and single particle lifetimes in the quantum Hall system. At higher energies, we observe the splitting of highly excited Landau levels by spin polarization at the Fermi surface, demonstrating that the high energy spectrum reflects the low temperature ground state in these highly correlated systems. These measurements bring to light the difficult to reach and beautiful structure present far from the Fermi surface.
by Oliver Eugene Dial, III.
Ph.D.
Hemingway, Bryan J. „Magnetoconductance and Dynamic Phenomena in Single-Electron Transistors“. University of Cincinnati / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352397253.
Der volle Inhalt der QuelleMarnham, Lachlan Leslie. „Bi-electron bound states in single- and double-layer graphene nanostructures“. Thesis, University of Exeter, 2016. http://hdl.handle.net/10871/23165.
Der volle Inhalt der QuelleVenkatachalam, Vivek. „Single Electron Probes of Fractional Quantum Hall States“. Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10478.
Der volle Inhalt der QuellePhysics
Erbsen, Wes Corbin. „Non-dissociative single-electron ionization of diatomic molecules“. Thesis, Kansas State University, 2013. http://hdl.handle.net/2097/15740.
Der volle Inhalt der QuelleDepartment of Physics
Carlos Trallero
Over the past four decades, the single-electron ionization of atoms has been a subject of great interest within the ultra-fast community. While contemporary atomic ionization models tend to agree well with experiment across a wide range of intensities (10[superscript]13-10[superscript]15 W/cm[superscript]2), analogous models for the ionization of molecules are currently lacking in accuracy. The deficiencies present in molecular ionization models constitute a formidable barrier for experimentalists, who wish to model the single-electron ionization dynamics of molecules in intense laser fields. The primary motivation for the work presented in this thesis is to provide a comprehensive data set which can be used to improve existing models for the strong-field ionization of molecules. Our approach is to simultaneously measure the singly-charged ion yield of a diatomic molecule paired with a noble gas atom, both having commensurate ionization potentials. These measurements are taken as a function of the laser intensity, typically spanning two orders of magnitude (10[superscript]13-10[superscript]15 W/cm[superscript]2). By taking the ratio of the molecular to atomic yields as a function of laser intensity, it is possible to "cancel out" systematic errors which are common to both species, e.g. from laser instability, or temperature fluctuations. This technique is very powerful in our ionization studies, as it alludes to the distinct mechanisms leading to the ionization of both molecular and atomic species at the same intensity which are not a function of the experimental conditions. By using the accurate treatments of atomic ionization in tandem with existing molecular ionization models as a benchmark, we can use our experimental ratios to modify existing molecular ionization theories. We hope that the data procured in this thesis will be used in the development of more accurate treatments describing the strong-field ionization of molecules.
Bücher zum Thema "Single-Electron physics"
Scholze, Andreas. Simulation of single-electron devices. Konstanz: Hartung-Gorre, 2000.
Den vollen Inhalt der Quelle findenHans, Koch. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 (Sessions on SET and Mesoscopic Devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992.
Den vollen Inhalt der Quelle finden1948-, Koch H., und Lübbig H. 1932-, Hrsg. Single-electron tunneling and mesoscopic devices: Proceedings of the 4th international conference, SQUID '91 (sessions on SET and mesoscopic devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin: Springer-Verlag, 1992.
Den vollen Inhalt der Quelle finden1927-, March Norman H., und Deb B. M, Hrsg. The Single-particle density in physics and chemistry. London: Academic Press, 1987.
Den vollen Inhalt der Quelle findenShevelko, Viateheslav P., und V. P. Shevelko. Single and Multiple Ionization of Atoms and Ions by Electron Impact (Physics Reviews). CRC, 1999.
Den vollen Inhalt der Quelle findenKiselev, Mikhail, Konstantin Kikoin und Yshai Avishai. Dynamical Symmetries for Nanostructures: Implicit Symmetries in Single-Electron Transport Through Real and Artificial Molecules. Springer Wien, 2011.
Den vollen Inhalt der Quelle findenHans, Koch, und Ernest B. Vinberg. Single-Electron Tunneling and Mesoscopic Devices: Proceedings of the 4th International Conference SQUID '91 , ... Series in Electronics and Photonics ). Springer, 2011.
Den vollen Inhalt der Quelle findenWolf, E. L. Solar Cell Physics and Technologies. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0010.
Der volle Inhalt der QuelleTiwari, Sandip. Nanoscale Device Physics. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198759874.001.0001.
Der volle Inhalt der QuelleMorawetz, Klaus. Scattering on a Single Impurity. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.003.0004.
Der volle Inhalt der QuelleBuchteile zum Thema "Single-Electron physics"
Gliserin, A., S. Lahme, M. Walbran, F. Krausz und P. Baum. „Ultrafast Single-Electron Diffraction“. In Springer Proceedings in Physics, 295–98. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-13242-6_72.
Der volle Inhalt der QuelleLandi Degl’Innocenti, Egidio. „Atoms with a Single Valence Electron“. In UNITEXT for Physics, 119–47. Milano: Springer Milan, 2014. http://dx.doi.org/10.1007/978-88-470-2808-1_6.
Der volle Inhalt der QuelleMcGurn, Arthur. „Toward Single-Electron Transistors“. In An Introduction to Condensed Matter Physics for the Nanosciences, 225–39. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003031987-9.
Der volle Inhalt der QuelleGrossmann, Frank. „Single Electron Atoms in Strong Laser Fields“. In Theoretical Femtosecond Physics, 99–136. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00606-2_4.
Der volle Inhalt der QuelleFischetti, Massimo V., und William G. Vandenberghe. „Single-Electron Dynamics in Crystals“. In Advanced Physics of Electron Transport in Semiconductors and Nanostructures, 163–83. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-01101-1_8.
Der volle Inhalt der QuelleKoski, Jonne V., und Jukka P. Pekola. „Quantum Thermodynamics in a Single-Electron Box“. In Fundamental Theories of Physics, 897–915. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-99046-0_37.
Der volle Inhalt der QuelleShiozawa, Toshiyuki. „Single-Particle Theory of the Free-Electron Laser“. In Advanced Texts in Physics, 159–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06261-6_6.
Der volle Inhalt der QuelleProulx, Daniel, Zhong-jian Teng und Robin Shakeshaft. „Single and Double Photoionization of Two-Electron Systems“. In Super-Intense Laser-Atom Physics, 375–90. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-7963-2_32.
Der volle Inhalt der QuelleCrowe, Albert, und Igor Bray. „Is Single Electron Excitation in Helium Now Fully Understood?“ In Selected Topics on Electron Physics, 45–55. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0421-0_4.
Der volle Inhalt der QuelleJiang, H. W., E. Yablonovitch, M. Xiao, M. Sakr, G. Scott und E. T. Croke. „Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures“. In Topics in Applied Physics, 81–100. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-79365-6_5.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Single-Electron physics"
BARNAS, J., J. MARTINEK, G. MICHALEK und B. R. BULKA. „SINGLE-ELECTRON ELECTRONICS WITH SPIN: FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR“. In Proceedings of the Sixth's International School of Theoretical Physics. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811479_0023.
Der volle Inhalt der QuelleKawamura, Minoru, Kazuhito Tsukagoshi und Kimitoshi Kono. „Single-Electron Transistor Made from a Single Gold Colloidal Particle“. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355242.
Der volle Inhalt der QuelleStróżecka, Anna, Kaliappan Muthukumar, J. Andreas Larsson, Bert Voigtländer, Beverly Karplus Hartline, Renee K. Horton und Catherine M. Kaicher. „Electron Transport Through Single Fullerene Molecules (abstract)“. In WOMEN IN PHYSICS: Third IUPAP International Conference on Women in Physics. AIP, 2009. http://dx.doi.org/10.1063/1.3137886.
Der volle Inhalt der QuelleAhmed, H. „Fabrication, physics and applications of single electron devices“. In IEE Colloquium on Advanced Developments in Microelectronic Engineering. IEE, 1996. http://dx.doi.org/10.1049/ic:19961240.
Der volle Inhalt der QuelleFallahi, P. „Imaging Electrons in a Single-Electron Quantum Dot“. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994338.
Der volle Inhalt der QuelleBrown, K. R. „Controlling and measuring a single donor electron in silicon“. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994655.
Der volle Inhalt der QuelleSchleser, R. „Time resolved single electron detection in a quantum dot“. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994336.
Der volle Inhalt der QuelleChandrasekhar, V., und R. A. Webb. „Single electron charging effects in insulating wires“. In Ordering disorder: Prospect and retrospect in condensed matter physics. AIP, 1992. http://dx.doi.org/10.1063/1.44746.
Der volle Inhalt der QuelleSchneiderman, J. F., P. Delsing, M. D. Shaw, H. M. Bozler und P. M. Echternach. „Experimental Realization of a Differential Radio-Frequency Single-Electron Transistor“. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355241.
Der volle Inhalt der QuelleOhgi, Taizo, Yukihiro Sakotsubo, Daisuke Fujita und Youiti Ootuka. „Offset Charge Distribution in Nanocluster-Based Single-Electron Tunneling Devices“. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355243.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Single-Electron physics"
Tzfira, Tzvi, Michael Elbaum und Sharon Wolf. DNA transfer by Agrobacterium: a cooperative interaction of ssDNA, virulence proteins, and plant host factors. United States Department of Agriculture, Dezember 2005. http://dx.doi.org/10.32747/2005.7695881.bard.
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