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Thematische Bibliographien / Si heterojunction solar cells / Zeitschriftenartikel

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Zeitschriftenartikel zum Thema „Si heterojunction solar cells“

Autor: Grafiati

Veröffentlicht am 28. Juni 2021

Zuletzt aktualisiert am 11. Februar 2022

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1

Lin, C. H. "Si/Ge/Si double heterojunction solar cells." Thin Solid Films 518, no. 6 (2010): S255—S258. http://dx.doi.org/10.1016/j.tsf.2009.10.101.

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2

Zelentsov, K. S., and A. S. Gudovskikh. "GaP/Si anisotype heterojunction solar cells." Journal of Physics: Conference Series 741 (August 2016): 012096. http://dx.doi.org/10.1088/1742-6596/741/1/012096.

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3

Ruan, Kaiqun, Ke Ding, Yuming Wang, et al. "Flexible graphene/silicon heterojunction solar cells." Journal of Materials Chemistry A 3, no. 27 (2015): 14370–77. http://dx.doi.org/10.1039/c5ta03652f.

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4

Yamamoto, Hiroshi, Yoshirou Takaba, Yuji Komatsu та ін. "High-efficiency μc-Si/c-Si heterojunction solar cells". Solar Energy Materials and Solar Cells 74, № 1-4 (2002): 525–31. http://dx.doi.org/10.1016/s0927-0248(02)00071-5.

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5

Yamamoto, Kenji, Kunta Yoshikawa, Hisashi Uzu, and Daisuke Adachi. "High-efficiency heterojunction crystalline Si solar cells." Japanese Journal of Applied Physics 57, no. 8S3 (2018): 08RB20. http://dx.doi.org/10.7567/jjap.57.08rb20.

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6

Chen, Li, Xinliang Chen, Yiming Liu, Ying Zhao, and Xiaodan Zhang. "Research on ZnO/Si heterojunction solar cells." Journal of Semiconductors 38, no. 5 (2017): 054005. http://dx.doi.org/10.1088/1674-4926/38/5/054005.

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7

Hayashi, Toshiya, Takehiro Nishikura, Kazuhiro Nishimura, and Yoshinori Ema. "p-Si/n-CdS Heterojunction Solar Cells." Japanese Journal of Applied Physics 28, Part 1, No. 7 (1989): 1174–77. http://dx.doi.org/10.1143/jjap.28.1174.

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8

Anderson, W. A., B. Jagannathan, and E. Klementieva. "Lightweight, thin-film Si heterojunction solar cells." Progress in Photovoltaics: Research and Applications 5, no. 6 (1997): 433–41. http://dx.doi.org/10.1002/(sici)1099-159x(199711/12)5:6<433::aid-pip195>3.0.co;2-p.

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9

Gudovskikh, A. S., K. S. Zelentsov, A. I. Baranov, et al. "Study of GaP/Si Heterojunction Solar Cells." Energy Procedia 102 (December 2016): 56–63. http://dx.doi.org/10.1016/j.egypro.2016.11.318.

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10

Nawaz, Muhammad. "Design Analysis of a-Si/c-Si HIT Solar Cells." Advances in Science and Technology 74 (October 2010): 131–36. http://dx.doi.org/10.4028/www.scientific.net/ast.74.131.

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A theoretical design analysis using numerical two dimensional computer aided design tool (i.e., TCAD) is presented for a-Si/c-Si based heterojunction (HJ) solar cells. A set of optical beam propagation models, complex refractive index models and defect models for a-Si material implemented (in-built) in the simulation software are first evaluated for single (SHJ) and double heterojunction (DHJ) devices. Assessment is further carried out by varying physical parameters of the layer structures such as doping, thickness of the c-Si and a-Si layers, defect density in the a-Si layer and bandgap discontinuity parameter. With varying bandgap discontinuity and using standard transport model in numerical device simulation, HJ solar cell performance is undervalued (η = 19.5%). This is the result of poor photogenerated carrier collection due to the presence of heterojunction at the respective n and p-contacts of the device. Implementing thermionic field emission tunneling model at the heterojunction, we obtained improved performance (η = 24 %) over large range of bandgap discontinuities. Keeping improved efficiency of HJ cell, implementing a step graded a-Si layer, further helps to widen the range of bandgap discontinuity parameter.

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Focsa, A., I. Gordon, G. Beaucarne, O. Tuzun, A. Slaoui, and J. Poortmans. "Heterojunction a-Si/poly-Si solar cells on mullite substrates." Thin Solid Films 516, no. 20 (2008): 6896–901. http://dx.doi.org/10.1016/j.tsf.2007.12.097.

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12

Fahrner, W. R., R. Goesse, M. Scherff, T. Mueller, M. Ferrara, and H. C. Neitzert. "Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells." Journal of The Electrochemical Society 152, no. 11 (2005): G819. http://dx.doi.org/10.1149/1.2041949.

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13

Yun, Myoung Hee, Jae Won Kim, Song Yi Park, Dong Suk Kim, Bright Walker, and Jin Young Kim. "High-efficiency, hybrid Si/C60 heterojunction solar cells." Journal of Materials Chemistry A 4, no. 42 (2016): 16410–17. http://dx.doi.org/10.1039/c6ta02248k.

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14

Gao, Peng, Ke Ding, Yan Wang, et al. "Crystalline Si/Graphene Quantum Dots Heterojunction Solar Cells." Journal of Physical Chemistry C 118, no. 10 (2014): 5164–71. http://dx.doi.org/10.1021/jp412591k.

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15

Liu, Qiming, Ishwor Khatri, Ryo Ishikawa, Keiji Ueno, and Hajime Shirai. "Efficient crystalline Si/organic hybrid heterojunction solar cells." physica status solidi (c) 9, no. 10-11 (2012): 2101–6. http://dx.doi.org/10.1002/pssc.201200131.

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16

Nakamura, Junichi, Naoki Asano, Takeshi Hieda, Chikao Okamoto, Hiroyuki Katayama, and Kyotaro Nakamura. "Development of Heterojunction Back Contact Si Solar Cells." IEEE Journal of Photovoltaics 4, no. 6 (2014): 1491–95. http://dx.doi.org/10.1109/jphotov.2014.2358377.

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17

Калиновский, В. С., Е. И. Теруков, Е. В. Контрош, В. Н. Вербицкий та A. С. Титов. "Радиационная стойкость гетеропереходных солнечных элементов alpha-Si : H/Si с тонким внутренним слоем i-alpha-Si : H". Письма в журнал технической физики 44, № 17 (2018): 95. http://dx.doi.org/10.21883/pjtf.2018.17.46576.17283.

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AbstractWe have studied the degradation of photoelectric characteristics of heterojunction solar cell samples based on α-Si:H/Si structures upon irradiation by electrons with an energy of 3.8 MeV and fluences of 1 × 10^12–1 × 10^14 cm^–2. It is shown that the efficiency of the samples of heterojunction solar cell elements under the conditions of AM0 illumination (0.136 W/cm^2) is reduced by 25% at a fluence of 2 × 10^13 cm^–2. This is more than an order of magnitude higher than the critical fluence value achieved previously when silicon solar cells with a p–n junction and an n -type base were irradiated by high-energy electrons.

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Mamedov, Huseyn, Syed Ismat Shah, Archil Chirakadze, Vusal Mammadov, Vusala Mammadova, and Khumar Ahmedova. "Photovoltaic performance of p-Si/Cd1-xZnxO heterojunctions." Photonics Letters of Poland 10, no. 1 (2018): 26. http://dx.doi.org/10.4302/plp.v10i1.797.

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Heterojunctions of p-Si/Cd1-xZnxO were synthesized by depositing of Cd1-xZnxO films on p-Si substrates by electrochemical deposition. The morphological properties of the films were studied by scanning microscopy. The electric and photoelectrical properties of heterojunctions were investigated depending on the deposition potential and films composition. Heterojunctions of p-Si/Cd1-xZnxO, which deposited at cathode potential of -1.2 V, shows good rectification (k=1640). Under AM1.5 conditions the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our best nano-structured cell, were Uoc = 442 mV, Jsc = 19.9 mA/cm2, FF = 0.59 and n = 5.1 %, respectively. Full Text: PDF ReferencesX. Li, et al. "Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films", J. Appl. Phys., 105, 103914 (2009). CrossRef X. Han, K. Han and M. Tao, "Electrodeposition of Group-IIIA Doped ZnO as a Transparent Conductive Oxide", ECS Trans., 25, 93 (2010). CrossRef W. Liu et al. "Na-Doped p-Type ZnO Microwires", J. Am. Chem. Soc., 132, 2498 (2010). CrossRef R.A. Ismail and O.A. Abdulrazaq, "A new route for fabricating CdO/c-Si heterojunction solar cells", Sol. Energy Mater. Sol. Cells, 91, 903 (2007). CrossRef R.S. Mane, H.M. Pathan, C.D. Lokhande and S.H.Han, "An effective use of nanocrystalline CdO thin films in dye-sensitized solar cells", Sol. Energy, 80 185 (2006). CrossRef E. Martin et al. "Properties of multilayer transparent conducting oxide films", Thin Solid Films, 461, 309 (2004). CrossRef Y. Caglar, M. Caglar, S. Ilican and A. Ates, "Morphological, optical and electrical properties of CdZnO films prepared by sol?gel method", J. Phys. D: Appl. Phys., 42, 065421 (2009). CrossRef F. Wang, Z. Ye, D. Ma, L. Zhu and F. Zhuge, "Formation of quasi-aligned ZnCdO nanorods and nanoneedles", J. Cryst. Growth, 283, 373 (2005). CrossRef A. Abdinov, H. Mamedov, S. Amirova, "Investigation of Electrodeposited Glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO Thin Solar Cells", Jpn. J. Appl. Phys., 46, 7359 (2007). CrossRef A. Abdinov, H. Mamedov, H. Hasanov, and S. Amirova, "Photosensitivity of p,n-Si/n-Cd1?xZnxS heterojunctions manufactured by a method of electrochemical deposition", Thin Solid Films, 480-481, 388 (2005). CrossRef A. Abdinov, H. Mamedov, and S. Amirova, "Investigation of electrodeposited p-Si/Cd1 ? xZnxS1 ? ySey heterojunction solar cells", Thin Solid Films, 511-512, 140 (2006) CrossRef H. Mamedov, V. Mamedov, V. Mamedova, Kh. Ahmadova, "Investigation of p-GaAs/n-Cd1-xZnxS1-yTey/Cd1-xZnxO heterojunctions deposited by electrochemical deposition", J. Optoelectrom. Adv. M., 17, 67 (2015). DirectLink H. Mamedov et al. "Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition", J. Solar Energy Engineering, 136, 044503 (2014). CrossRef S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer and F. Henneberger, "Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy", Appl. Phys. Lett., 89, 201907 (2006). CrossRef G. Torres-Delgado et al. "Percolation Mechanism and Characterization of (CdO)y(ZnO)1?y Thin Films", Adv. Funct. Mater., 12, 129 (2002). CrossRef H. Tabet-Derraz, N. Benramdane, D. Nacer, A. Bouzidi and M. Medles, "Investigations on ZnxCd1?xO thin films obtained by spray pyrolysis", Sol. Energy Mater. Sol. Cells, 73, 249 (2002). CrossRef M. Tortosa, M. Mollar and B. Mar?, "Synthesis of ZnCdO thin films by electrodeposition", J. Cryst. Growth, 304, 97 (2007). CrossRef A. Singh, D. Kumar, P. K. Khanna, M. Kumar, and B. Prasad, "Phase Segregation Limit in ZnCdO Thin Films Deposited by Sol?Gel Method: A Study of Structural, Optical and Electrical Properties", ECS Journal of Solid State Science and Technology, 2 (9), Q136 (2013). CrossRef F.Z. Bedia, A. Bedia, B. Benyoucef and S.Hamzaoui, "Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique", Physics Procedia, 55, 61 (2014). CrossRef M. Jing-Jing et al. "Rectifying and Photovoltage Properties of ZnO:A1/p-Si Heterojunction", Chin. Phys. Lett., 27 (10), 107304 (2010). CrossRef

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19

Park, Hyomin, Sung Ju Tark, Chan Seok Kim, et al. "Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/794876.

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To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

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20

Xu, Yan Li, and Jin Hua Li. "Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction." Advanced Materials Research 399-401 (November 2011): 1477–80. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.1477.

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n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

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Bearda, Twan, Kunta Yoshikawa, Elisabeth van Assche, et al. "Optimization of Post-Texturization Cleans for Heterojunction Solar Cells." Solid State Phenomena 187 (April 2012): 341–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.341.

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Solar cells employing heterojunction emitters of amorphous silicon (a-Si) on a monocrystalline silicon (c-Si) substrate have demonstrated high efficiencies without requiring high-temperature processing [. An example of such a cell structure is shown in Figure 1. It has been found that the cell efficiency can be boosted by inserting a thin undoped (intrinsic) a-Si layer between the a-Si emitter and the c-Si substrate. The thin intrinsic layer provides very good passivation of interface defects, thus reducing the surface recombination velocity.

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Chao, Xiong, Li Hua Ding, Xiao Jin, et al. "Study the I-V and C-V Characterization of n-ZnO/p-Si Heterojunction." Advanced Materials Research 690-693 (May 2013): 607–10. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.607.

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A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heterojunction is too big, the current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at the forward voltage exceeds 1 V. The results suggest the existence of a large number of interface states in ZnO/p-Si heterojunction, and the interface states can be reduced and the photoelectric properties can be further improved.

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LI, X., Y. XU, and X. CHE. "a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates." Rare Metals 25, no. 6 (2006): 186–89. http://dx.doi.org/10.1016/s1001-0521(07)60071-0.

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24

Wang, Guang Wei, Sheng Li Lu, and Xin Wei Zhao. "Properties of Sputtered-n-nc-Si:Er/p-Si Heterojunction Solar Cells." Applied Mechanics and Materials 734 (February 2015): 791–95. http://dx.doi.org/10.4028/www.scientific.net/amm.734.791.

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Nanocrystalline Si:Er (nc-Si:Er) films were sputtered on p-Si (100) substrates and diffused with phosphorus to form PN heterojunction diodes. The I-V properties of these diodes were characterized. And the properties of diodes without Er were compared with n-nc-Si:Er/p-Si. It was found that n-nc-Si:Er/p-Si diodes had better characteristics. Solar cells based on n-nc-Si:Er/i-nc-Si/p-Si were fabricated and characterized. The photoelectrical conversion efficiency of 18.13% for n-nc-Si:Er/i-nc-Si/p-Si solar cell was achieved.

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Tseng, Shao-Ze, Chang-Rong Lin, Hung-Sen Wei, Chia-Hua Chan, and Sheng-Hui Chen. "Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering." International Journal of Photoenergy 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/707543.

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This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

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Liu, Yiming, Yun Sun, Wei Liu, and Jianghong Yao. "Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)." Phys. Chem. Chem. Phys. 16, no. 29 (2014): 15400–15410. http://dx.doi.org/10.1039/c4cp00668b.

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Zhang, Zexia, Tongxiang Cui, Ruitao Lv, et al. "Improved Efficiency of Graphene/Si Heterojunction Solar Cells by Optimizing Hydrocarbon Feed Rate." Journal of Nanomaterials 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/359305.

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Four different graphene films were synthesized via chemical vapor deposition by using acetonitrile with feed rates of 0.01, 0.02, 0.04, and 0.06 mL/min. Heterojunction solar cells were assembled by transferring as-synthesized graphene films onton-Si. Solar cells based on graphene samples produced at 0.01, 0.02, 0.04, and 0.06 mL/min demonstrate power conversion efficiencies of 2.26%, 2.10%, 1.02%, and 0.94%, respectively. When HNO3was used to dope the graphene films, the corresponding photovoltaic efficiencies were increased to 4.98%, 4.19%, 2.04%, and 1.74%, respectively. Mechanism for the improved efficiency of graphene/Si heterojunction solar cells was also investigated.

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Ašmontas, Steponas, Maksimas Anbinderis, Jonas Gradauskas, et al. "Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells." Materials 13, no. 12 (2020): 2857. http://dx.doi.org/10.3390/ma13122857.

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Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

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Yang, Xing, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen, and Song He. "HIT Solar Cells with N-Type Low-Cost Metallurgical Si." Advances in OptoElectronics 2018 (January 18, 2018): 1–5. http://dx.doi.org/10.1155/2018/7368175.

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A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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Hao, L. Z., W. Gao, Y. J. Liu, et al. "High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells." Nanoscale 7, no. 18 (2015): 8304–8. http://dx.doi.org/10.1039/c5nr01275a.

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31

Huang, Ying, Xiao Ming Shen, and Xiao Feng Wei. "Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS." Applied Mechanics and Materials 665 (October 2014): 111–14. http://dx.doi.org/10.4028/www.scientific.net/amm.665.111.

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In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

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Jeong, Hanbin, Hansol Kim, Won-Il Song, Kyung-Hoon Yoo, Jason Rama, and Jae Kwan Lee. "Improved efficiency of solution-processed bulk-heterojunction organic solar cells and planar-heterojunction perovskite solar cells with efficient hole-extracting Si nanocrystals." RSC Advances 6, no. 107 (2016): 104962–68. http://dx.doi.org/10.1039/c6ra24205g.

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He, Lining, Changyun Jiang, Hao Wang, Donny Lai, and Rusli. "High efficiency planar Si/organic heterojunction hybrid solar cells." Applied Physics Letters 100, no. 7 (2012): 073503. http://dx.doi.org/10.1063/1.3684872.

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Chen, L. C. "In2O3/Si heterojunction solar cells fabricated by InN oxidation." European Physical Journal Applied Physics 40, no. 2 (2007): 145–48. http://dx.doi.org/10.1051/epjap:2007138.

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Wang, Qi, Matt Page, Eugene Iwaniczko, Yueqin Xu, and Falah Hasoon. "Light Management for Efficient Crystalline Si Heterojunction Solar Cells." ECS Transactions 25, no. 15 (2019): 11–17. http://dx.doi.org/10.1149/1.3300416.

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Wang, Qi. "High-efficiency hydrogenated amorphous/crystalline Si heterojunction solar cells." Philosophical Magazine 89, no. 28-30 (2009): 2587–98. http://dx.doi.org/10.1080/14786430902919489.

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Muralidharan, Pradyumna, Stephen M. Goodnick, and Dragica Vasileska. "Multiscale modeling of transport in silicon heterojunction solar cells." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (2017): 1–15. http://dx.doi.org/10.4071/2017dpc-tha3_presentation1.

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Silicon based single junction solar cell technology continued to make significant strides in the past year with new world record module efficiencies being reported for the Panasonic heterojunction with thin intrinsic layer (HIT) module (23.8%) and the SunPower rooftop silicon module (24.1%). The HIT cell which is comprised of amorphous silicon (a-Si) and crystalline silicon (c-Si) currently holds the world record efficiency (25.6%) for a silicon based single junction solar cell. Further improvement in this technology requires a rigorous understanding of the underlying physics of the device. The device performance of a-Si and c-Si heterojunction solar cells depends heavily on the nature of transport at the hetero interface and defect assisted transport through the a-Si. Different microscopic processes dominate transport in different regions of the device and take place across widely varying time scales. In this work we present a multiscale model which utilizes different simulation methodologies to study physics in various regions of the device, namely, the Ensemble Monte Carlo (EMC), Kinetic Monte Carlo (KMC), and Drift Diffusion (DD) solvers. The EMC studies the behavior of the photogenerated carriers at the heterointerface; the KMC analyzes transport of the photogenerated carriers through the intrinsic amorphous silicon (i-a-Si) barrier layer; and the DD solver calculates current and other device properties in the low field regions of the cell. These solvers are then self consistently coupled to analyze device performance. Previously, our KMC simulations have shown that hopping is the main mode of transport through the i-a-Si, and the photogenerated carries are collected by defect emission rather that Poole - Frenkel emission or direct tunneling1. In addition, using EMC simulations we have shown that the photogenerated carriers exhibit non Maxwellian behavior at the heterointerface2. This work specifically describes the self-consistent coupling of the DD and EMC solvers. By adding the EMC solver to the multiscale solver we are able to capture the high field behavior of the photogenerated carriers, and its affect on device parameters such as JSC, VOC, FF and efficiency.

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Deng, Quanrong, Yiqi Li, Yonglong Shen, Lian Chen, Geming Wang, and Shenggao Wang. "Numerical simulation on n-MoS2/p-Si heterojunction solar cells." Modern Physics Letters B 31, no. 07 (2017): 1750079. http://dx.doi.org/10.1142/s0217984917500798.

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n-MoS2/p-Si heterojunction solar cells were simulated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) software. In order to fundamentally understand the mechanism of such kind of cells, the effects of electron affinity, band gap and thickness for MoS2, as well as the donor concentration in Si layer on the devices performance were simulated and discussed in detail. The effects of defect states in Si layer and at n-MoS2/p-Si interface on the performance of devices were also simulated. It is demonstrated that two-dimensional monolayer MoS2 with the highest band gap of 1.8 eV is the optimized option for ideal devices which can give out the highest efficiency over 19.0%. Si layer with higher acceptor concentration is more likely to be recommended in achieving higher power conversion efficiency if defect level can be effectively controlled. The defect states in Si layer and at MoS2/Si interface were identified to influence the performance of the devices significantly.

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Švrček, Vladimir, and Davide Mariotti. "Electronic interactions of silicon nanocrystals and nanocarbon materials: Hybrid solar cells." Pure and Applied Chemistry 84, no. 12 (2012): 2629–39. http://dx.doi.org/10.1351/pac-con-12-01-12.

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Hybrid inorganic/nanocarbon solar cells represent low-cost solutions for the large-scale manufacturing of energy conversion devices. Here we discuss results that relate to the electronic interactions of nanocarbon materials with freestanding and surfactant-free silicon nanocrystals (Si-ncs) with quantum confinement effects, integrated in bulk-heterojunction solar cells. In particular, we demonstrate the feasibility of bulk-heterojunction photovoltaic solar cells that consist of Si-ncs combined with fullerenes or with semiconducting single-walled carbon nanotubes (SWCNTs). We show that the energy levels between Si-ncs with energy gap exceeding 1.75 eV and fullerenes are adequate for exciton dissociation and carriers (electrons/holes) generation and that hybrid solar cells formed by Si-ncs and semi-conducting SWCNTs favor exciton dissociation only when a distinct chiral index [i.e., (7,5)] is used. While fullerenes show energy conversion capabilities in the visible spectral region (1.7–3.1 eV), the cells containing the SWCNTs, in comparison, have a considerably expanded optical response covering a broad range of the spectrum (0.9–3.1 eV).

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Mamedov, Huseyn, Mustafa Muradov, Zoltan Konya, et al. "Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells." Photonics Letters of Poland 10, no. 3 (2018): 73. http://dx.doi.org/10.4302/plp.v10i3.813.

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Solar cells based on c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions were synthesized by depositing CdS films on c-Si/porous-Si (PS) substrates by electrochemical deposition (ED). PS layers with systematically varied pore diameter (8-45 nm) and were fabricated on p-type c-Si wafers using electrochemical etching. The window layers of ZnxCd1-xO with several Zn concentrations(x=0.2; 0.4; 0.5 and 0.6) were also deposited on the CdS buffer layers by ED. The photoelectrical properties of heterojunctions were studied as functions of PS pore size and Zn content in ZnxCd1-xO. The optimal pore size and Zn contents were found to be 10 nm and x=0.6, respectively. These yielded a solar cell sample exhibiting an efficiency of 9.9%, the maximum observed in this study. Full Text: PDF ReferencesM.A.Green. "Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination", Progress in Photovoltaic 7, 327 (1999). CrossRef P.Papet, O. Nichiporik, A. Kaminski et al. "Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching", Solar Energy Materials and Solar Cells 90, 2319 (2006). CrossRef P. Vitanovet et al. "High-efficiency solar cell using a thin porous silicon layer", Thin Solid Films 297, 299 (1997). CrossRef L. Santinacci et al. "Electrochemical and optical characterizations of anodic porous n-InP(1 0 0) layers", Electrochim. Acta 56, 878 (2010). CrossRef V.Lehmann. "The Physics of Macropore Formation in Low Doped n‐Type Silicon", J. Electrochem. Soc. 140, 2836 (1993). CrossRef Bisi O et al. "Porous silicon: a quantum sponge structure for silicon based optoelectronics", Surface Science Reports 38, 1 (2000). CrossRef A.I. Raid et al. Applied Nanoscience 7, 9 (2016). CrossRef M.A. Naser et al. "Characteristics of Nanostructure Silicon Photodiode using Laser Assisted Etching", Procedia Engineering 53, 393 (2013). CrossRef D.H. Oh et al. J. Ceram. Process. Res. "Effects of a H2SO4 treatment on the optical properties in porous Si layers and electrical properties of diode devices fabricated with a H2SO4 treated porous Si layer", 9, 57 (2008). DirectLink H. Foll et al. "Formation and application of porous silicon", Materials Science and Engineering R 280, 1 (2002). CrossRef P. Granitzer et al. "Porous Silicon—A Versatile Host Material", Materials 3, 943 (2010). CrossRef G. Korotcenkov, Porous Silicon: From Formation to Application (Taylor and Francis Group, CRC Press, Boca Raton, USA, 2016). DirectLink V.Y. Yerokhov. "Porous silicon in solar cell structures: a review of achievements and modern directions of further use", Renewable and Sustainable Energy Rev. 3, 291 (1999). CrossRef A. Ramizy et al. "New optical features to enhance solar cell performance based on porous silicon surfaces", Appl. Surf. Science 257, 6112 (2011). CrossRef F. Ruske et al. "Large area ZnO:Al films with tailored light scattering properties for photovoltaic applications", Thin Solid Films 515, 8695 (2007). CrossRef Y. Alivov et al. "Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes", Appl. Phys. Lett. 83, 2943 (2003). CrossRef G.V. Lashkarev et al. "Properties of zinc oxide at low and moderate temperatures", Low Temp. Phys. 37, 289 (2011). CrossRef P.M. Devshette et al. "Growth and physical properties of ZnxCd1−xO thin films prepared by spray pyrolysis technique", J. of Alloys and Compunds 463, 576 (2008). CrossRef Y. Caglar et al. "Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method", J. Phys. D: Appl. Phys. 42, 065421 (2009). CrossRef A. Abdinov et al. "Photosensitivity of p,n-Si/n-Cd1−xZnxS heterojunctions manufactured by a method of electrochemical deposition", Thin Solid Films 480-481, 388 (2005). CrossRef A Abdinov et al. "Investigation of electrodeposited p-Si/Cd1 − xZnxS1 − ySey heterojunction solar cells", Thin Solid Films 511-512,140 (2006) CrossRef J.B. Orhan et al. "Nano-textured superstrates for thin film silicon solar cells: Status and industrial challenges", Sol. Cells 140, 344 (2015). CrossRef H.Ch. Alan et al. "Light management of tandem solar cells on nanostructured substrates", J. Photon. Energy 7, 027001 (2017) CrossRef

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Borchert, D., G. Grabosch, and W. R. Fahrner. "Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells." Solar Energy Materials and Solar Cells 49, no. 1-4 (1997): 53–59. http://dx.doi.org/10.1016/s0927-0248(97)00175-x.

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Vallisree, S., R. Thangavel, and T. R. Lenka. "Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells." Materials Research Express 6, no. 2 (2018): 025910. http://dx.doi.org/10.1088/2053-1591/aaf023.

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Tsai, Tzong-Han, Yung-Chun Wu, Shih-Sian Yang, and Chun-Hao Chen. "Optimization of Amorphous Si/Crystalline Si Heterojunction Solar Cells by BF2Ion Implantation." Japanese Journal of Applied Physics 51, no. 4S (2012): 04DP07. http://dx.doi.org/10.7567/jjap.51.04dp07.

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Zhang, Xiao-Mei, Dmitri Golberg, Yoshio Bando, and Naoki Fukata. "n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays." Nanoscale 4, no. 3 (2012): 737–41. http://dx.doi.org/10.1039/c2nr11752e.

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Kim, Gil-Sung, Min-Young Park, Jae-Ho Lee, et al. "Photovoltaic Characteristics of Si Nanowires-Incorporated Pyramid-Textured Heterojunction Si Solar Cells." Journal of Nanoelectronics and Optoelectronics 10, no. 2 (2015): 277–81. http://dx.doi.org/10.1166/jno.2015.1746.

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Privitera, Stefania, Vincenza Brancato, Donatella Spadaro, Ruggero Anzalone, Alessandra Alberti, and Francesco La Via. "3C-SiC Polycrystalline Films on Si for Photovoltaic Applications." Materials Science Forum 821-823 (June 2015): 189–92. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.189.

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The electrical and optical properties of n-doped polycrystalline 3C-SiC films grown on 6 inches Si wafers have been investigated as a function of precursor gases, deposition temperature and C/Si ratio. The Si/SiC interface has been optimized, eliminating the voids formation through a double temperature step process and by introducing a thin not intentionally doped layer. Films with high surface roughness, favourable for light trapping in photovoltaic applications, and with resistivity around 20 mOhm cm have been obtained for C/Si ratio close to 1. Simple solar cells have been also manufactured and proved the functionality of poly 3C-SiC/Si heterojunction solar cell. Increased quantum efficiency in the range 300-500 nm has been observed, compared to amorphous Si, making poly 3C-SiC heterojunction solar cells interesting for high temperature applications or water splitting.

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Stegemann, Bert, Jan Kegel, Lars Korte, and Heike Angermann. "Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells." Solid State Phenomena 255 (September 2016): 338–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.338.

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Key steps in the fabrication of high-efficiency a-Si:H/c-Si heterojunction solar cells are the controlled pyramid texturing of the c-Si substrates to minimize reflection losses and the subsequent passivation by deposition of a high-quality a-Si:H layer to reduce recombination losses. This contribution reviews our recent results on the optimization of the wet-chemical texturing of crystalline Si wafers for the preparation of heterojunction solar cells with respect to low reflection losses, low recombination losses and long minority carrier lifetimes. It is demonstrated, that by joint optimization of both saw damage etch and texture etch the optical and electronic properties of the resulting pyramid morphology can be controlled. Effective surface passivation and thus long minority charge carrier lifetimes are achieved by deposition of intrinsic amorphous Si ((i) a-Si:H) layers. It is shown, that optimized (i) a-Si:H deposition parameters for planar Si (111) wafers can be transferred to a-Si:H layer deposition on random pyramid textured Si (100) wafers. Statistical analysis of the pyramid size distribution revealed that a low fraction of small pyramids leads to longer minority charge carrier lifetimes and, thus, a higher Voc potential for solar cells.

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Grace, Tom, Hong Duc Pham, Christopher T. Gibson, Joseph G. Shapter, and Prashant Sonar. "Application of A Novel, Non-Doped, Organic Hole-Transport Layer into Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells." Applied Sciences 9, no. 21 (2019): 4721. http://dx.doi.org/10.3390/app9214721.

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The search for novel solar cell designs as an alternative to standard silicon solar cells is important for the future of renewable energy production. One such alternative design is the carbon nanotube/silicon (CNT/Si) heterojunction solar device. In order to improve the performance of large area CNT/Si heterojunction solar cells, a novel organic material, 4,10-bis(bis(4-methoxyphenyl)amino)naptho[7,8,1,2,3-nopqr]tetraphene-6,12-dione (DPA-ANT-DPA (shortened to DAD)), was added as an interlayer between the CNT film and the silicon surface. The interlayer was examined with SEM and AFM imaging to determine an optimal thickness for solar cell performance. The DAD was shown to improve the device performance with the efficiency of large area devices improving from 2.89% ± 0.40% to 3.34% ± 0.10%.

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Watahiki, Tatsuro, Takeo Furuhata, Tsutomu Matsuura, et al. "Rear-emitter Si heterojunction solar cells with over 23% efficiency." Applied Physics Express 8, no. 2 (2015): 021402. http://dx.doi.org/10.7567/apex.8.021402.

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Khan, Aurangzeb, Masafumi Yamaguchi, and N. Kojima. "Recombination center in C60/p-Si heterojunction and solar cells." Solid-State Electronics 44, no. 8 (2000): 1471–75. http://dx.doi.org/10.1016/s0038-1101(00)00062-9.

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