Zeitschriftenartikel: „Semiconductor opening switch“

1

Tu, Jing, Jinsheng Luo und Rong Yang. „Mechanism of Semiconductor Opening Switch“. Japanese Journal of Applied Physics 46, Nr. 3A (08.03.2007): 897–902. http://dx.doi.org/10.1143/jjap.46.897.

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2

Chauchard, E. A., C. C. Kung, Chi H. Lee und M. J. Rhee. „Repetitive semiconductor opening switch and application to short pulse generation“. Laser and Particle Beams 7, Nr. 3 (August 1989): 615–26. http://dx.doi.org/10.1017/s0263034600007588.

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We describe the operation of a repetitive semiconductor opening switch in conjunction with inductive energy storage systems. Different materials and switch configurations are examined. A new method of generating square pulses of nanosecond duration is implemented. It utilizes the opening switch and a current charged transmission line.

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3

Hashimshony, D., C. Cohen, A. Zigler und K. Papadopoulos. „Switch opening time reduction in high power photoconducting semiconductor switches“. Optics Communications 124, Nr. 5-6 (März 1996): 443–47. http://dx.doi.org/10.1016/0030-4018(95)00685-0.

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4

Jiang, Weihua. „Pulsed High-Voltage Generator using Semiconductor Opening Switch“. IEEJ Transactions on Fundamentals and Materials 130, Nr. 6 (2010): 538–42. http://dx.doi.org/10.1541/ieejfms.130.538.

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5

Schoenbach, K. H., V. K. Lakdawala, R. Germer und S. T. Ko. „An optically controlled closing and opening semiconductor switch“. Journal of Applied Physics 63, Nr. 7 (April 1988): 2460–63. http://dx.doi.org/10.1063/1.341022.

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6

Lyubutin, S., M. Pedos, A. V. Ponomarev, S. Rukin, B. Slovikovsky, S. Tsyranov und P. Vasiliev. „High efficiency nanosecond generator based on semiconductor opening switch“. IEEE Transactions on Dielectrics and Electrical Insulation 18, Nr. 4 (August 2011): 1221–27. http://dx.doi.org/10.1109/tdei.2011.5976119.

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7

Ivanov, Pavel A., und Igor V. Grekhov. „Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode“. Materials Science Forum 740-742 (Januar 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm2 peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5 - 25 kA/cm2 in a time less than 0.3 ns.

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8

Lyubutin, S. K., S. N. Rukin, B. G. Slovikovsky und S. N. Tsyranov. „Operation of a semiconductor opening switch at ultrahigh current densities“. Semiconductors 46, Nr. 4 (April 2012): 519–27. http://dx.doi.org/10.1134/s106378261204015x.

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9

Gusev, A. I., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin und B. G. Slovikovsky. „Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode“. Review of Scientific Instruments 89, Nr. 11 (November 2018): 114702. http://dx.doi.org/10.1063/1.5052530.

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10

NAMIHIRA, Takao, Takashi SAKUGAWA, Sunao KATSUKI und Hidenori AKIYAMA. „Pulsed Power Generator with Inductive-Energy Storage Using Semiconductor Opening Switch“. Journal of Plasma and Fusion Research 81, Nr. 5 (2005): 355–58. http://dx.doi.org/10.1585/jspf.81.355.

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11

Li Zhongjie, Li Yongdong, Wang Hongguang, Lin Shu und Liu Chunliang. „Numerical simulation of semiconductor opening switch with circuit-fluid coupled model“. High Power Laser and Particle Beams 22, Nr. 6 (2010): 1411–04. http://dx.doi.org/10.3788/hplpb20102206.1411.

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12

Ding, Zhenjie, Qingsong Hao, Long Hu, Jiancang Su und Guozhi Liu. „All-solid-state repetitive semiconductor opening switch-based short pulse generator“. Review of Scientific Instruments 80, Nr. 9 (September 2009): 093303. http://dx.doi.org/10.1063/1.3233937.

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13

Zagulov, F. Ya, V. V. Kladukhin, D. L. Kuznetsov, S. K. Lyubutin, Yu N. Novoselov, S. N. Rukin, B. G. Slovikovskii und E. A. Kharlov. „A high-current nanosecond electron accelerator with a semiconductor opening switch“. Instruments and Experimental Techniques 43, Nr. 5 (September 2000): 647–51. http://dx.doi.org/10.1007/bf02759076.

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14

Zhu, Jianbin, Munan Lin, Haibo Li, Wenqing Zhang, Yuntao Liu und Xin Qi. „Development of a nanosecond high voltage pulser based on Semiconductor Opening Switch“. Journal of Instrumentation 18, Nr. 10 (01.10.2023): P10002. http://dx.doi.org/10.1088/1748-0221/18/10/p10002.

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Abstract Nanosecond pulser is widely used in beam injection and extraction. Semiconductor Opening Switch (SOS) is a type of high voltage diode with P+-P-N-N+ semiconductor structure, which has a great application prospect in pulse power technology for its notably short switching-off time, high repetition rate and large working current. The cutoff time of the SOS is dependent on the duration and amplitude of the pumping current, which may reach thousands of amperes. A two-stage magnetic compression pumping circuit without external demagnetization cicuits is proposed to meet the operational requirements of SOS. The circuit was simulated by Pspice, which confirmed the principle of the circuit. A prototype of the pulser was constructed based on the simulation analysis. The experiments indicated that the reverse pumping current with amplitude of 460 A and duration of 18 ns, and a 16 kV, duration of 14 ns pulse was generated on the load of 50 Ω. The design, simulation and the test results of the nanosecond high voltage pulser are presented in the paper.

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15

Gusev, A. I., M. S. Pedos, S. N. Rukin, S. P. Timoshenkov und S. N. Tsyranov. „A 6 GW nanosecond solid-state generator based on semiconductor opening switch“. Review of Scientific Instruments 86, Nr. 11 (November 2015): 114706. http://dx.doi.org/10.1063/1.4936295.

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16

Sugai, Taichi, Weihua Jiang und Akira Tokuchi. „Influence of forward pumping current on current interruption by semiconductor opening switch“. IEEE Transactions on Dielectrics and Electrical Insulation 22, Nr. 4 (August 2015): 1971–75. http://dx.doi.org/10.1109/tdei.2015.004989.

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17

Yokoo, T., K. Saiki, K. Hotta und W. Jiang. „Repetitive Pulsed High-Voltage Generator Using Semiconductor Opening Switch for Atmospheric Discharge“. IEEE Transactions on Plasma Science 36, Nr. 5 (Oktober 2008): 2638–43. http://dx.doi.org/10.1109/tps.2008.2004368.

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18

Panchenko, Alexei N., und Victor F. Tarasenko. „Efficient gas lasers pumped by double-discharge circuits with semiconductor opening switch“. Progress in Quantum Electronics 36, Nr. 1 (Januar 2012): 143–93. http://dx.doi.org/10.1016/j.pquantelec.2012.03.005.

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19

Patrakov, V. E., M. S. Pedos und S. N. Rukin. „Picosecond semiconductor generator for capacitive sensors calibration“. Journal of Physics: Conference Series 2064, Nr. 1 (01.11.2021): 012128. http://dx.doi.org/10.1088/1742-6596/2064/1/012128.

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Abstract The paper describes a semiconductor picosecond pulse generator that can be used to calibrate capacitive high voltage sensors of MV range. The generator is designed as a base unit, to which external pulse converters are connected. In the base unit, semiconductor devices – first a semiconductor opening switch (SOS) and then a semiconductor sharpener (SS) – generate an output pulse with a rise time of 220 ps and a subsequent flat-top of 2 ns in duration. The pulse amplitude is around 1 kV across 50 Ω load. An external diode sharpener generates a pulse with 120 ps rise time and 500-ps flat-top at the amplitude of 850 V. To switch the semiconductor sharpeners to the conducting state, the shock-ionization wave mode is used. Additional pulse converters make it possible to generate output pulses across 50 Ω load with the rise time of 70-150 ps, the pulse duration of 135-310 ps, and the amplitude of 130–480 V. The electrical diagram of the generator and waveforms of the output pulses are presented. An example of the calibration of capacitive sensors of a multi-gigawatt picosecond generator is also shown.

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20

Wang Gang, 王刚, 苏建仓 Su Jiancang, 丁臻捷 Ding Zhenjie, 范菊平 Fan Juping, 袁雪林 Yuan Xuelin, 潘亚峰 Pan Yafeng, 浩庆松 Hao Qingsong, 方旭 Fang Xu und 胡龙 Hu Long. „Repetitive frequency pulsed generator based on semiconductor opening switch and linear transformer driver“. High Power Laser and Particle Beams 26, Nr. 4 (2014): 45011. http://dx.doi.org/10.3788/hplpb20142604.45011.

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21

Wang Gusen, 王古森, 王洪广 Wang Hongguang, 戚玉佳 Qi Yujia und 李永东 Li Yongdong. „Influences of key parameters on width of output pulses by semiconductor opening switch“. High Power Laser and Particle Beams 26, Nr. 6 (2014): 63021. http://dx.doi.org/10.3788/hplpb20142606.63021.

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22

Wang, Gang, Jiancang Su, Zhenjie Ding, Xuelin Yuan und Yafeng Pan. „A semiconductor opening switch based generator with pulse repetitive frequency of 4 MHz“. Review of Scientific Instruments 84, Nr. 12 (Dezember 2013): 125102. http://dx.doi.org/10.1063/1.4833683.

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23

Teramoto, Yusuke, Daisuke Deguchi, Igor V. Lisitsyn, Takao Namihira, Sunao Katsuki und Hidenori Akiyama. „All-solid-state triggerless repetitive pulsed power generator utilizing a semiconductor opening switch“. Review of Scientific Instruments 72, Nr. 12 (Dezember 2001): 4464–68. http://dx.doi.org/10.1063/1.1416115.

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24

Yuan, Qi, Zichen Deng, Weidong Ding, Yanan Wang und Jiawei Wu. „New advances in solid-state pulse generator based on magnetic switches“. Review of Scientific Instruments 93, Nr. 5 (01.05.2022): 051501. http://dx.doi.org/10.1063/5.0079583.

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Pulsed power technology is gradually forming a development trend of civil-military integration, which puts forward more requirements for pulsed power generators. This paper takes magnetic switches (MSs) as the starting point and reviews recent advancements in pulse generators based on MSs. First, the working mechanism of the MS “rapid inductance drop after magnetic core saturation” is analyzed. Second, the basic uses of MSs are introduced with specific examples, namely, magnetic compression unit, saturated pulse transformer, and magnetic delay switches. Then, the typical topologies of pulse generators based on MSs are discussed, including transmission line, Marx, Fitch, linear transformer driver, and semiconductor opening switch pumping circuits. These circuits’ technical characteristics and parameter levels are highlighted. Finally, the existing problems and future development trends of MS-based solid-state pulse generators are discussed.

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25

Kostyrya, Igor D., Victor M. Orlovskii, Victor F. Tarasenko, Weihua Jiang und Tatsumi Goto. „A pulsed repetitive CO2laser pumped by a longitudinal-discharge-initiated semiconductor opening switch diode“. Plasma Devices and Operations 14, Nr. 3 (September 2006): 177–84. http://dx.doi.org/10.1080/10519990600708734.

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26

Zhang, Chao, Zhicheng Shi, Xuefeng Liu, Huanhong Chen und Ai Zhang. „Design of a High Speed Electro-optic Q-switch Circuit for Aerospace Applications“. Journal of Physics: Conference Series 2617, Nr. 1 (01.10.2023): 012011. http://dx.doi.org/10.1088/1742-6596/2617/1/012011.

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Abstract In order to meet the requirements of high amplitude and high speed of electro-optic Q-switch voltage, a high speed electro-optic Q-switch circuit for aerospace applications is designed. According to the principle of Marx generator, the circuit uses a high speed driving chip to drive the switching transistor to conduct. The charge of the primary energy storage capacitor of the pulse transformer is quickly released, and the secondary induced voltage drives the switches of the Marx generator to open quickly and synchronously. By utilizing the fast and synchronous opening of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), cascaded discharge is carried out on the energy storage capacitors of the 8th order Marx generator circuit, thereby outputting high voltage pulse signal. The experimental results show that the Marx generator has maximum boost output range of 4000V and high voltage pulse rise time of less than 30ns. Compared to traditional pulse transformer control methods, the Q-switch voltage rise time is reduced by nearly 40ns. The internal components of circuit meet the requirements of multiple indicators such as anti-irradiation space environment, and have the characteristic of short output high voltage rise time, which can provide high speed and high voltage driving pulses for the electro-optic Q-switch crystal inside the laser cavity.

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27

Kim, Hyosung. „Gate Drive Controller for Low Voltage DC Hybrid Circuit Breaker“. Energies 14, Nr. 6 (22.03.2021): 1753. http://dx.doi.org/10.3390/en14061753.

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With the advent of direct current (DC) loads such as LED lighting, IT equipment, electric vehicles, and DC powers generated from renewable energy sources, low voltage DC (LVDC) distribution system is becoming a hot issue. One of the hurdles in the LVDC distribution system is arc flash at the contact points that occurs during the circuit is opening. Unlike alternating current, direct current has no zero points and sustains constantly. Therefore, there is a risk of electric fire due to continuous generating arcs when the load current is interrupted with an existing electrical contact type circuit breaker. Recently, the concept of a hybrid circuit breaker that takes advantage of traditional electrical contact type switch and the arcless semiconductor switch has been proposed, but how to cooperatively operate the two switches has become an issue. This paper analyzes the principle of a hybrid circuit breaker for blocking LVDC current and proposes a gate drive controller for it. Through 400V class LVDC cutoff test, the operation of the proposed hybrid circuit breaker is verified and the characteristics are analyzed.

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28

Bychkov, Yu I., Aleksei N. Panchenko, Viktor F. Tarasenko, A. E. Tel'minov, S. A. Yampol'skaya und A. G. Yastremskii. „Efficient XeCl laser with a semiconductor opening switch in a pump oscillator: Theory and experiment“. Quantum Electronics 37, Nr. 4 (30.04.2007): 319–24. http://dx.doi.org/10.1070/qe2007v037n04abeh013253.

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29

Lyubutin, S. K., S. N. Rukin, B. G. Slovikovkii und S. N. Tsyranov. „A semiconductor opening switch-based quasi-rectangualr pulse generator operating into a low-impedance load“. Instruments and Experimental Techniques 43, Nr. 1 (Januar 2000): 66–72. http://dx.doi.org/10.1007/bf02759001.

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30

Vasiliev, P. V., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov und S. O. Cholakh. „Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density“. Semiconductors 43, Nr. 7 (Juli 2009): 953–56. http://dx.doi.org/10.1134/s1063782609070252.

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31

Kung, C. C., E. A. Chauchard, C. H. Lee und M. J. Rhee. „Kilovolt square pulse generation by a dual of the Blumlein line with a photoconductive semiconductor opening switch“. IEEE Photonics Technology Letters 4, Nr. 6 (Juni 1992): 621–23. http://dx.doi.org/10.1109/68.141988.

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32

Kakuta, Takatoshi, Ippei Yagi und Koichi Takaki. „Improvement of deoxidization efficiency of nitric monoxide by shortening pulse width of semiconductor opening switch pulse power generator“. Japanese Journal of Applied Physics 54, Nr. 1S (30.10.2014): 01AG02. http://dx.doi.org/10.7567/jjap.54.01ag02.

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33

Kung, C. C., E. A. Chauchard, Chi H. Lee, M. J. Rhee und L. Yan. „Observation of power gain in an inductive energy pulsed power system with an optically controlled semiconductor opening switch“. Applied Physics Letters 57, Nr. 22 (26.11.1990): 2330–32. http://dx.doi.org/10.1063/1.103884.

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34

Sugai, Taichi, Wei Liu, Akira Tokuchi, Weihua Jiang und Yasushi Minamitani. „Influence of a Circuit Parameter for Plasma Water Treatment by an Inductive Energy Storage Circuit Using Semiconductor Opening Switch“. IEEE Transactions on Plasma Science 41, Nr. 4 (April 2013): 967–74. http://dx.doi.org/10.1109/tps.2013.2251359.

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35

Zhuang, Longyu, Kai Zhu, Junfeng Rao und Jie Zhuang. „Solid-state Marx generator based on saturable pulse transformer and fast recovery diodes“. Journal of Instrumentation 18, Nr. 10 (01.10.2023): P10036. http://dx.doi.org/10.1088/1748-0221/18/10/p10036.

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Abstract Solid-state compact Marx generator using saturable pulse transformer (SPT) and fast recovery diodes has been proposed. The primary circuit is switched by three MOSFETs connected in parallel. The SPT functions as a step-up transformer to increase the voltage amplitude and as a closing switch for the secondary circuit. Meanwhile, all the SPTs share the same magnetic core to achieve a compact structure and ensure good synchronization. The energy storage capacitors on the secondary sides are charged through the unsaturated SPT. When the SPT saturates, the capacitors firstly transfer a little energy to the saturated inductors through the diodes reversely during their reverse recovery process. Currents rise quickly in these inductors until diodes totally recover to reverse blocking state. Then capacitors discharge in series to the load and high-voltage pulses are generated over the load. With the currents in the saturated inductors, the front edges of pulses are no longer affected by them but are dominated the turn-off speed of the diodes, which makes high-voltage and high-current pulses with short front edges possible. The regular and cheap fast recovery diodes in the generator act as semiconductor opening switch to sharpen the pulse front edges. Experiments were carried out with a 4-stage Marx generator prototype, 10.8-kV high-voltage pulses with a front edge of 11 ns, a pulse width of 190 ns, were obtained over a 100-Ω resistive load. The total energy efficiency is 49.8%. The proposed Marx generator using regular fast recovery diodes is compact, cheap, and efficient to generate high-voltage pulses with short front edges.

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36

Komarskiy, Alexander Alexandrovich, Sergey Romanovich Korzhenevskiy, Andrey Viktorovich Ponomarev und Nikita Alexandrovich Komarov. „Pulsed X-ray source with the pulse duration of 50 ns and the peak power of 70 MW for capturing moving objects“. Journal of X-Ray Science and Technology 29, Nr. 4 (27.07.2021): 567–76. http://dx.doi.org/10.3233/xst-210873.

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BACKGROUND: Traditionally, X-ray systems for capturing moving objects consist of a continuous X-ray source and a detector that operates at a predetermined frame rate. OBJECTIVE: This study investigates the possibility of using pulsed X-ray source with an inductive energy storage device and a semiconductor opening switch for shooting moving objects. METHODS: The study uses a high-voltage pulse generator that has the following parameters namely, the pulse voltage amplitude up to 320 kV, the pulse current up to 240 A, the current pulse duration of about 50 ns, and the pulse repetition rate up to 2 kHz. The duration and intensity of glow for standard CsI:Tl and Gd2O2S:Tb X-ray phosphors after their irradiation with X-ray flashes of about 50 ns duration are investigated. After X-ray radiation is converted into light, the signal is recorded using semiconductor detectors. We acquired several images of an object moving at a speed of about 20 m/s. A semiconductor detector with phosphor, which operates in the mode of continuous signal accumulation, is used. RESULTS: When using the pulsed X-ray source and phosphors with a short afterglow, the individual frames can be obtained at the pulse repetition rate of several kilohertz, and the detector does not contain the residual luminescence from the previous frame by the arrival of the next frame. CONCLUSIONS: The X-ray source shows good pulse-to-pulse reproducibility of X-rays, and can be used to capture objects in motion at a frame rate of several kHz.

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37

Hu, L., Z. Ding, Q. Hao, Y. Pan und X. Fang. „Design of a 43 kV, 20 kHz solid-state pulse generator driven by a low-current-density-pumped semiconductor opening switch“. Measurement Science and Technology 24, Nr. 7 (23.05.2013): 077002. http://dx.doi.org/10.1088/0957-0233/24/7/077002.

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38

Gusev, A. I., M. S. Pedos, A. V. Ponomarev, S. N. Rukin, S. P. Timoshenkov und S. N. Tsyranov. „A 30 GW subnanosecond solid-state pulsed power system based on generator with semiconductor opening switch and gyromagnetic nonlinear transmission lines“. Review of Scientific Instruments 89, Nr. 9 (September 2018): 094703. http://dx.doi.org/10.1063/1.5048111.

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39

Komarskiy, A., S. Korzhenevskiy, A. Chepusov und O. Krasniy. „The pulsed X-ray radiation source based on a semiconductor opening switch with the focal point diameter of 0.5 mm and its application“. Review of Scientific Instruments 90, Nr. 9 (September 2019): 095106. http://dx.doi.org/10.1063/1.5087222.

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40

Lin Shu, 林舒, 李永东 Li Yongdong, 王洪广 Wang Hongguang und 刘纯亮 Liu Chunliang. „Scaled model for simulating opening process of semiconductor opening switches“. High Power Laser and Particle Beams 25, Nr. 9 (2013): 2341–45. http://dx.doi.org/10.3788/hplpb20132509.2341.

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41

Chauchard, E. A., M. J. Rhee und Chi H. Lee. „Optically activated semiconductors as repetitive opening switches“. Applied Physics Letters 47, Nr. 12 (15.12.1985): 1293–95. http://dx.doi.org/10.1063/1.96309.

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42

Lee, C. H. „Optical control of semiconductor closing and opening switches“. IEEE Transactions on Electron Devices 37, Nr. 12 (Dezember 1990): 2426–38. http://dx.doi.org/10.1109/16.64515.

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43

Grekhov, I. V., und G. A. Mesyats. „Physical basis for high-power semiconductor nanosecond opening switches“. IEEE Transactions on Plasma Science 28, Nr. 5 (2000): 1540–44. http://dx.doi.org/10.1109/27.901229.

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44

Rukin, S. N. „Pulsed power technology based on semiconductor opening switches: A review“. Review of Scientific Instruments 91, Nr. 1 (01.01.2020): 011501. http://dx.doi.org/10.1063/1.5128297.

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45

Abbasi, A. H., K. Niayesh und J. Shakeri. „Performance Enhancement of High Power High Repetition Rate Semiconductor Opening Switches“. Acta Physica Polonica A 115, Nr. 6 (Juni 2009): 983–85. http://dx.doi.org/10.12693/aphyspola.115.983.

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46

Grekhov, Igor V., Pavel A. Ivanov, Dmitry V. Khristyuk, Andrey O. Konstantinov, Sergey V. Korotkov und Tat’yana P. Samsonova. „Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes“. Solid-State Electronics 47, Nr. 10 (Oktober 2003): 1769–74. http://dx.doi.org/10.1016/s0038-1101(03)00157-6.

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47

Darznek, S. A., G. A. Mesyats und S. N. Rukin. „Dynamics of electron-hole plasma in semiconductor opening switches for ultradense currents“. Technical Physics 42, Nr. 10 (Oktober 1997): 1170–75. http://dx.doi.org/10.1134/1.1258796.

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48

Glazov, A. L., V. A. Kozlov und K. L. Muratikov. „Laser thermowave diagnostics of heat transfer through bonded interfaces in multielement semiconductor opening switches“. Technical Physics Letters 37, Nr. 12 (Dezember 2011): 1149–53. http://dx.doi.org/10.1134/s1063785011120212.

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49

Darznek, S. A., S. N. Rukin und S. N. Tsiranov. „Effect of structure doping profile on the current switching-off process in power semiconductor opening switches“. Technical Physics 45, Nr. 4 (April 2000): 436–42. http://dx.doi.org/10.1134/1.1259650.

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Engelko, A., und H. Bluhm. „Optimal design of semiconductor opening switches for use in the inductive stage of high power pulse generators“. Journal of Applied Physics 95, Nr. 10 (15.05.2004): 5828–36. http://dx.doi.org/10.1063/1.1707207.

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