Auswahl der wissenschaftlichen Literatur zum Thema „Semiconductor opening switch“
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Zeitschriftenartikel zum Thema "Semiconductor opening switch"
Tu, Jing, Jinsheng Luo und Rong Yang. „Mechanism of Semiconductor Opening Switch“. Japanese Journal of Applied Physics 46, Nr. 3A (08.03.2007): 897–902. http://dx.doi.org/10.1143/jjap.46.897.
Der volle Inhalt der QuelleChauchard, E. A., C. C. Kung, Chi H. Lee und M. J. Rhee. „Repetitive semiconductor opening switch and application to short pulse generation“. Laser and Particle Beams 7, Nr. 3 (August 1989): 615–26. http://dx.doi.org/10.1017/s0263034600007588.
Der volle Inhalt der QuelleHashimshony, D., C. Cohen, A. Zigler und K. Papadopoulos. „Switch opening time reduction in high power photoconducting semiconductor switches“. Optics Communications 124, Nr. 5-6 (März 1996): 443–47. http://dx.doi.org/10.1016/0030-4018(95)00685-0.
Der volle Inhalt der QuelleJiang, Weihua. „Pulsed High-Voltage Generator using Semiconductor Opening Switch“. IEEJ Transactions on Fundamentals and Materials 130, Nr. 6 (2010): 538–42. http://dx.doi.org/10.1541/ieejfms.130.538.
Der volle Inhalt der QuelleSchoenbach, K. H., V. K. Lakdawala, R. Germer und S. T. Ko. „An optically controlled closing and opening semiconductor switch“. Journal of Applied Physics 63, Nr. 7 (April 1988): 2460–63. http://dx.doi.org/10.1063/1.341022.
Der volle Inhalt der QuelleLyubutin, S., M. Pedos, A. V. Ponomarev, S. Rukin, B. Slovikovsky, S. Tsyranov und P. Vasiliev. „High efficiency nanosecond generator based on semiconductor opening switch“. IEEE Transactions on Dielectrics and Electrical Insulation 18, Nr. 4 (August 2011): 1221–27. http://dx.doi.org/10.1109/tdei.2011.5976119.
Der volle Inhalt der QuelleIvanov, Pavel A., und Igor V. Grekhov. „Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode“. Materials Science Forum 740-742 (Januar 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.
Der volle Inhalt der QuelleLyubutin, S. K., S. N. Rukin, B. G. Slovikovsky und S. N. Tsyranov. „Operation of a semiconductor opening switch at ultrahigh current densities“. Semiconductors 46, Nr. 4 (April 2012): 519–27. http://dx.doi.org/10.1134/s106378261204015x.
Der volle Inhalt der QuelleGusev, A. I., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin und B. G. Slovikovsky. „Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode“. Review of Scientific Instruments 89, Nr. 11 (November 2018): 114702. http://dx.doi.org/10.1063/1.5052530.
Der volle Inhalt der QuelleNAMIHIRA, Takao, Takashi SAKUGAWA, Sunao KATSUKI und Hidenori AKIYAMA. „Pulsed Power Generator with Inductive-Energy Storage Using Semiconductor Opening Switch“. Journal of Plasma and Fusion Research 81, Nr. 5 (2005): 355–58. http://dx.doi.org/10.1585/jspf.81.355.
Der volle Inhalt der QuelleDissertationen zum Thema "Semiconductor opening switch"
Degnon, Mawuena. „Étude des commutateurs semi-conducteurs à ouverture destinés à des applications de puissance pulsée avec des tensions de sortie allant jusqu'à 500 kV“. Electronic Thesis or Diss., Pau, 2024. https://theses.hal.science/tel-04685830.
Der volle Inhalt der QuelleIn pulsed power systems, inductive energy storage has an advantage over capacitive storage because of its higher energy density. Exploiting this advantage requires the use of an opening switch to generate the voltage pulse. Moreover, the growing need for reliable pulsed power generators, particularly for industrial applications, strongly supports the adoption of solid-state solutions. The Semiconductor Opening Switch (SOS) diode developed in the 1990s at the Institute of Electrophysics in Russia is an ideal candidate for solid-state opening switching because of its ability to reliably generate high-power pulses at high repetition rates while offering long lifetime and maintenance-free operation. However, the lack of SOS diode manufacturers prevents their widespread use. This thesis is therefore devoted to the study of off-the-shelf (OTS) diodes capable of rapidly switching high currents and generating nanosecond voltages of up to 500 kV. The research includes the investigation of various diode types including rectifier, avalanche, fast recovery, and transient voltage suppression (TVS) diodes as opening switches in comparison with state-of-the-art SOS diodes. Low, medium, and high-energy (25 mJ, 10 J, and 40 J respectively) test benches are developed for the experiments. Their circuits use a single magnetic element – a saturable pulse transformer – resulting in high energy efficiency. Several nanocrystalline cores are examined for optimum transformer performance at an energy of 10 J. Among the diodes investigated at 25 mJ and 10 J energy, the TVS and rectifying diodes stand out particularly promising with nanosecond switching time and generated voltages in the kilovolt range. Finally, a 40 J pulsed power generator prototype (GO-SSOS) based on an OTS opening switch consisting of rectifier diodes is developed. The GO-SSOS achieves a peak power of more than 300 MW with an energy efficiency ranging from 35% to 70% depending on the load value. Across a 1 kΩ load, the voltage pulse generated reaches 500 kV amplitude with a rise time of 36 ns and a pulse width of 80 ns. The system shows high reproducibility at a repetition rate of 60 Hz and is used to demonstrate a corona discharge application. The work proves the reliability of the OTS diodes in SOS mode, revealing no degradation after thousands of pulses. It also offers the prospect of using this technology in industrial applications such as electron-beam sterilization
Konferenzberichte zum Thema "Semiconductor opening switch"
Chauchard, E. A., M. J. Rhee und Chi H. Lee. „Repetitive opening switches using optically activated semiconductors“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fu7.
Der volle Inhalt der QuelleSchoenbach, K. I., V. K. Lakdawala, S. T. Ko, M. S. Mazzola und R. K. F. Germer. „Laser Controlled Semiconductor Closing And Opening Switch“. In 1988 Los Angeles Symposium--O-E/LASE '88, herausgegeben von Raymond F. Askew. SPIE, 1988. http://dx.doi.org/10.1117/12.943642.
Der volle Inhalt der QuelleSugai, Taichi, Akira Tokuchi und Weihua Jiang. „Experimental characteristics of semiconductor opening switch diode“. In 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2014. http://dx.doi.org/10.1109/ipmhvc.2014.7287218.
Der volle Inhalt der QuelleRoodenburg, B. „Current source semiconductor opening switch with parallel IGCTs“. In Pulsed Power Seminar. IEE, 2003. http://dx.doi.org/10.1049/ic:20030074.
Der volle Inhalt der QuelleCitrin, D. S., und T. B. Norris. „All-Optical Switching at 100-Gb/s Rates via Coherent Control of Excitons in a Semiconductor Microcavity“. In Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/ps.1997.pthc5.
Der volle Inhalt der QuellePanchenko, Alexei N., Victor F. Tarasenko und Alexei E. Tel'minov. „Gas discharge lasers pumped by generators with semiconductor opening switch“. In International Conference on Lasers, Applications, and Technologies '07, herausgegeben von Vladislav Panchenko, Vladimir Golubev, Andrey Ionin und Alexander Chumakov. SPIE, 2007. http://dx.doi.org/10.1117/12.753211.
Der volle Inhalt der QuellePanchenko, Alexei N. „Efficient discharge lasers pumped by double-discharge circuits with semiconductor opening switch“. In 18th International Symposium on Gas Flow & Chemical Lasers & High Power Lasers, herausgegeben von Tanja Dreischuh, Petar A. Atanasov und Nikola V. Sabotinov. SPIE, 2010. http://dx.doi.org/10.1117/12.878396.
Der volle Inhalt der QuelleStoudt, D. C., J. S. Kenney und K. H. Schoenbach. „INDUCTIVE ENERGY STORAGE USING A FAST-OPENING BULK OPTICALLY CONTROLLED SEMICONDUCTOR SWITCH (BOSS)“. In Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512892.
Der volle Inhalt der QuelleKotov, Yu A., G. B. Mesyats, S. N. Rukin, A. L. Filatov und S. K. Lyubutin. „A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOLOGY: EXP“. In Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512960.
Der volle Inhalt der QuelleBychkov, Yu, Evgenii H. Baksht, Alexei N. Panchenko, Victor F. Tarasenko, S. A. Yampolskaya und Arkadi G. Yastremsky. „Formation of pumping discharge of XeCl laser by means of semiconductor opening switch“. In International Conference on Atomic and Molecular Pulsed Lasers IV, herausgegeben von Victor F. Tarasenko, Georgy V. Mayer und Gueorgii G. Petrash. SPIE, 2002. http://dx.doi.org/10.1117/12.460108.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Semiconductor opening switch"
Lee, Chi H., und Moon-Jhong Rhee. Repetitive Opening Switches Using Optically Activated Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, Oktober 1987. http://dx.doi.org/10.21236/ada190196.
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