Thematische Bibliographien / Resistive memories (RRAMs)

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Auswahl der wissenschaftlichen Literatur zum Thema „Resistive memories (RRAMs)“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

Zuletzt aktualisiert am 31. Juli 2025

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Zeitschriftenartikel zum Thema "Resistive memories (RRAMs)"

Kim, Kyoungdu, Woongki Hong, Changmin Lee, et al. "Sol-gel-processed amorphous-phase ZrO₂ based resistive random access memory." Materials Research Express 8, no. 11 (2021): 116301. http://dx.doi.org/10.1088/2053-1591/ac3400.

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Abstract In this study, sol–gel-processed amorphous-phase ZrO2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO2/Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO2 RRAM was investigated. Unlike the ZrO2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 106

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Lin, Wu, and Chen. "Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories." Crystals 9, no. 6 (2019): 318. http://dx.doi.org/10.3390/cryst9060318.

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: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching fe

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Aguilera-Pedregosa, Cristina, David Maldonado, Mireia B. González, et al. "Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories." Micromachines 14, no. 3 (2023): 630. http://dx.doi.org/10.3390/mi14030630.

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A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These

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Jha, Rashmi, Vamshi Kiran Kiran Gogi, and Siddharth Barve. "(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices." ECS Meeting Abstracts MA2024-01, no. 57 (2024): 3011. http://dx.doi.org/10.1149/ma2024-01573011mtgabs.

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Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of no

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Arumí, Daniel, Salvador Manich, Álvaro Gómez-Pau, et al. "Impact of Laser Attacks on the Switching Behavior of RRAM Devices." Electronics 9, no. 1 (2020): 200. http://dx.doi.org/10.3390/electronics9010200.

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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tes

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Ansh and Mayank Shrivastava. "Superior resistance switching in monolayer MoS₂ channel-based gated binary resistive random-access memory via gate-bias dependence and a unique forming process." Journal of Physics D: Applied Physics 55, no. 8 (2021): 085102. http://dx.doi.org/10.1088/1361-6463/ac3281.

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Abstract Resistance switching (RS) in 2D molybdenum disulfide (MoS2) was recently discovered. Since the discovery, many reports demonstrating MoS2 resistive random-access memory (RRAM) with synapse-like behavior have been published. These reports strongly justify applications of MoS2 RRAM in neuromorphic hardware as well as an alternative to conventional binary memories. In this work, we unveil the effect of RS, induced by current–voltage hysteresis cycles across CVD-grown monolayer MoS2-based gated RRAM, on its transistor’s electrical and reliability characteristics. A unique gate voltage dep

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Shu, Pan, Xiaofei Cao, Yongqiang Du, et al. "Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite." Journal of Materials Chemistry C 8, no. 37 (2020): 12865–75. http://dx.doi.org/10.1039/d0tc02579h.

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Alimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim, and Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode." Nanomaterials 10, no. 9 (2020): 1634. http://dx.doi.org/10.3390/nano10091634.

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Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is

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Vasileiadis, Nikolaos, Vasileios Ntinas, Georgios Ch Sirakoulis, and Panagiotis Dimitrakis. "In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor." Materials 14, no. 18 (2021): 5223. http://dx.doi.org/10.3390/ma14185223.

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State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the most demanding IoT applications. Resistance switching (RS) two-terminal devices are suitable for resistive RAMs (RRAM), a promising technology to realize storage class memories. Furthermore, due to their memristive nature, RRAMs are appropriate candidates for in-memory computing architectures. Recently, we demonstrated a CMOS compatible silicon nitr

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Poddar, Swapnadeep, Yuting Zhang, Zhesi Chen, Zichao Ma, and Zhiyong Fan. "(Digital Presentation) Resistive Switching and Brain-Inspired Computing in Perovskite Nanowires and Quantum Wires." ECS Meeting Abstracts MA2022-02, no. 36 (2022): 1336. http://dx.doi.org/10.1149/ma2022-02361336mtgabs.

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In the past decade, halide perovskites (HPs) have shot to fame in the genre of optoelectronics and photovoltaics owing to their large absorption co-effcient, high color purity, tunable bandgap and long charge diffusion lengths. Besides these traits, HPs also possess innumerable charge transport pathways, inherent hysteresis, high charge-carrier and ionic mobilities which render them as ideal candidates for resistive random access switching memories (RRAMs). However owing to material and electrical instability associated with HP thin-film devices, the figures-of-merits (FOMs) namely retention,

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Dissertationen zum Thema "Resistive memories (RRAMs)"

Bazzi, Hussein. "Resistive memory co-design in CMOS technologies." Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0567.

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De nombreuses applications (internet des objets, systèmes embarqués automobiles et médicales, intelligence artificielle) ont besoin d’un circuit intégré (ou SoC pour System on Chip) avec des mémoires non volatiles embarquées performantes pour fonctionner de manière optimale. Bien que la mémoire Flash soit largement utilisée aujourd'hui, cette technologie nécessite une tension élevée pour les opérations de programmation et présente des problèmes de fiabilité difficiles à gérer au-delà du nœud technologique 18 nm, augmentant les coûts de conception et de fabrication des circuits. Dans ce context

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Chowdhury, Madhumita. "NiOx Based Resistive Random Access Memories." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812.

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ZANOTTI, TOMMASO. "Circuiti innovativi ad alta efficienza energetica per l'elaborazione sicura in memoria basati su dispositivi di memoria resistivi." Doctoral thesis, Università degli studi di Modena e Reggio Emilia, 2022. http://hdl.handle.net/11380/1271184.

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L’enorme mole di dati prodotta dai dispositivi per l’Internet of Things richiede una trasformazione dell’attuale infrastruttura di cloud computing: lo spostamento di parte dell’elaborazione dove i dati vengono generati (edge computing). Per attuare questo cambio di paradigma, lo sviluppo di nuove soluzioni hardware per l’elaborazione dei dati più efficienti è fondamentale. Inoltre, il sopraggiungere del limite fisico di miniaturizzazione dei transistor implica la necessità di sviluppare nuovi nanodispositivi e nuove architetture di calcolo, che si scostano dalla tradizionale architettura di vo

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Levisse, Alexandre. "3D high density memory based on emering resistive technologies : circuit and architecture design." Thesis, Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0584.

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Alors que les mémoires non-volatiles conventionnelles, telles que les mémoires flash à grille flottante, deviennent de plus en plus complexes à intégrer et souffrent de performances et d’une fiabilité de plus en plus réduite, les mémoires à variation de résistance (RRAM) telles que les OxRAM, CBRAM, MRAM ou PCM sont vues dans la communauté scientifique comme une alternative crédible. Cependant, les architectures de RRAM standard (telles que la 1Transistor-1RRAM) ne sont pas compétitives avec les mémoires flash sur le terrain de la densité. Ainsi, cette thèse se propose d’explorer le potentiel

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Levisse, Alexandre. "3D high density memory based on emering resistive technologies : circuit and architecture design." Electronic Thesis or Diss., Aix-Marseille, 2017. http://www.theses.fr/2017AIXM0584.

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"Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays." Doctoral diss., 2013. http://hdl.handle.net/2286/R.I.20918.

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abstract: Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable disks (CD-RW and DVD-RW), microelectromechanical systems (MEMS), microfluidics, and optical communications. One of the significant properties of ChG materials is the change in the resistivity of the material when a metal such as Ag or Cu is added to it by diffusion. This study demonstrates the potential radiation-sensing capabilities of two metal/chalcogenide glass device configurations. Later

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Buchteile zum Thema "Resistive memories (RRAMs)"

Kiazadeh, Asal, Paulo R. Rocha, Qian Chen, and Henrique L. Gomes. "Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles." In Technological Innovation for Sustainability. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19170-1_65.

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Rocha, Paulo R. F., Asal Kiazadeh, Qian Chen, and Henrique L. Gomes. "Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor." In Technological Innovation for Value Creation. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-28255-3_59.

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Ricci, Saverio, Piergiulio Mannocci, Matteo Farronato, Alessandro Milozzi, and Daniele Ielmini. "Development of Crosspoint Memory Arrays for Neuromorphic Computing." In Special Topics in Information Technology. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-51500-2_6.

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AbstractMemristor-based hardware accelerators play a crucial role in achieving energy-efficient big data processing and artificial intelligence, overcoming the limitations of traditional von Neumann architectures. Resistive-switching memories (RRAMs) combine a simple two-terminal structure with the possibility of tuning the device conductance. This Chapter revolves around the topic of emerging memristor-related technologies, starting from their fabrication, through the characterization of single devices up to the development of proof-of-concept experiments in the field of in-memory computing,

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Lacaze, Pierre Camille, and Jean-Christophe Lacroix. "Resistive Memory Systems (RRAM)." In Non-Volatile Memories. John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118789988.ch6.

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Bousoulas, P., and D. Tsoukalas. "Silicon Oxide-based CBRAM Memory and Neuromorphic Properties." In Advanced Memory Technology. Royal Society of Chemistry, 2023. http://dx.doi.org/10.1039/bk9781839169946-00515.

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The constant scaling of the conventional field-effect transistors (FETs) over the last half century has permitted the development of memory elements with enhanced density. However, since continuous miniaturization is practically impossible, novel device architectures have been proposed. Among them, resistive switching memories (RRAMs) emerge as quite promising candidates due to their simple structure, which permits aggressive scaling, and inherent stochastic performance, which is leveraged for the implementation of neuromorphic functionalities. Along these lines, a detailed analysis from a mat

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Konferenzberichte zum Thema "Resistive memories (RRAMs)"

Chee, Hock Leong, T. Nandha Kumar, Haider AF Almurib, and Desmond Wen Hui Kang. "Analysis of a Novel Non-Volatile Look-Up Table (NV LUT) Controller Design with Resistive Random-Access Memories (RRAM) for Field-Programmable Gate Arrays (FPGA)." In 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2019. http://dx.doi.org/10.1109/rsm46715.2019.8943560.

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