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Auswahl der wissenschaftlichen Literatur zum Thema „Pre amorphization“
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Zeitschriftenartikel zum Thema "Pre amorphization"
Wen, D. S., J. Liu, C. M. Osburn und J. J. Wortman. „Interface Traps Caused by Ge Pre‐Amorphization“. Journal of The Electrochemical Society 132, Nr. 10 (01.10.1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.
Der volle Inhalt der QuelleSchreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu und F. W. Saris. „Pre-amorphization damage in ion-implanted silicon“. Materials Science Reports 6, Nr. 7-8 (August 1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.
Der volle Inhalt der QuelleAndrzejewski, M., N. Casati und A. Katrusiak. „Reversible pressure pre-amorphization of a piezochromic metal–organic framework“. Dalton Transactions 46, Nr. 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.
Der volle Inhalt der QuelleCellini, C., A. Carnera, M. Berti, A. Gasparotto, D. Steer, M. Servidori und S. Milita. „Pre-amorphization damage study in as-implanted silicon“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, Nr. 1-2 (März 1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.
Der volle Inhalt der QuelleHempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen und Korbinian Löbmann. „Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization“. Molecules 25, Nr. 5 (27.02.2020): 1068. http://dx.doi.org/10.3390/molecules25051068.
Der volle Inhalt der QuelleMurakami, Y., I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao und T. Yoshitake. „Enhanced solid-phase growth of β-FeSi2 by pre-amorphization“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (Mai 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.
Der volle Inhalt der QuelleAzarov, A. Yu, A. I. Titov und S. O. Kucheyev. „Effect of pre-existing disorder on surface amorphization in GaN“. Journal of Applied Physics 108, Nr. 3 (August 2010): 033505. http://dx.doi.org/10.1063/1.3462380.
Der volle Inhalt der QuelleLi, Hong-Jyh, Peter Zeitzoff, Larry Larson und Sanjay Banerjee. „B diffusion in Si with pre-amorphization of different species“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, Nr. 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.
Der volle Inhalt der QuelleDelwail, C., S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio et al. „Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide“. Microelectronic Engineering 254 (Februar 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.
Der volle Inhalt der QuelleFelch, S. B., H. Graoui, G. Tsai und A. Mayur. „Optimization of pre-amorphization and dopant implant conditions for advanced annealing“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, Nr. 1-2 (August 2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.
Der volle Inhalt der QuelleDissertationen zum Thema "Pre amorphization"
Lin, Yu-Chang, und 林裕章. „Shallow Junction Doping Formation on PMOSFET by Germanium Pre-Amorphization Implantation“. Thesis, 2006. http://ndltd.ncl.edu.tw/handle/49791559263956147738.
Der volle Inhalt der Quelle長庚大學
電子工程研究所
94
The main challenges for PMOSFET shallow junction formation remains the worst short channel effect (SCE) and high sheet resistance of source / drain. Ion implantation is the commonly used and best controlled technique in complementary metal-oxide-semiconductor (CMOS) technology to dope the source/drain extension (SDE) region of the device. It has been demonstrated that a method of forming low sheet resistance, shallow P+ junctions for improved PMOSFET short-channel performance on fabricated products. Shallow Si1-xGex self-aligned to the gate electrode is form by Ge pre-amorphization implantation (PAI). Afterwards, sidewall oxidation is formed and a deep BF2 implant is performed to form source/drain (S/D) region. Boron actives rapidly in the shallow Si1-xGex region to form low resistivity extensions to the channel. As compared to a conventional S/D junction process, this new process provides significantly lower S/D-extension sheet resistance and superior PMOSFET short-channel performance (threshold voltage roll-off, drain-induced barrier lowering, device off-current) which was improved by Boron suppression and higher solid solubility. The method could be used as S/D extensions for sub-100nm CMOS generations.
Lee, Chao-Chung, und 李肇中. „Schottky Barrier Height Tuning of NiSi Using Yb Interlayer With Pre-Amorphization Implantation“. Thesis, 2011. http://ndltd.ncl.edu.tw/handle/78910484661778617482.
Der volle Inhalt der Quelle國立交通大學
電子研究所
99
The metal silicide source/drain (S/D) Schottky barrier (SB) MOSFETs are considered one of the most promising candidates for sub-22nm devices because of small series resistance of S/D, easy processing, low thermal budget, and excellent short channel effect immunity. However, SB MOSFETs usually suffer from a large leakage current at the drain in the off state and poor saturation drive current due to undesired high SB height (SBH). Ni silicide is the most promising silicide material because it has greater advantages than Ti silicide and Co silicide. Owing to the Fermi level of NiSi lies close to the middle of Si bandgap, the SBH of NiSi is rather large for both electron (0.65eV) and hole (0.45eV). Several studies have addressed decreasing the SBH for electrons at the NiSi/Si interface to improve device performance by incorporating rare earth (RE) metals such as, Yb, Er, and Dy into NiSi. The results show that the RE metals segregated at the NiSi surface rather than piled up at the NiSi/Si interface after annealing, therefore little modulation of SBH was observed. In this study, tuning the SBH at the NiSi/Si interface for a Schottky barrier diode using an Yb interlayer is proposed. With the aid of pre-amorphization implantation (PAI) to silicon substrate, it was found that aggregating of Yb atoms in the surface of NiSi after silicidation is suppressed. Among the splits, the TiN/Ni(5nm)/Yb(15nm) structure deposited after the pre-amorphization of Si by N2+ ions induced the greatest change in SBH after annealing at 500℃.
Chen, Chin Yu, und 陳慶育. „Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation“. Thesis, 2016. http://ndltd.ncl.edu.tw/handle/92197321391993049667.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Pre amorphization"
Chen, Pin Hong, Chia Chang Hsu, Jerander Lai, Boris Liao, Chun Ling Lin, Olivia Huang, Chun Chieh Chiu, C. M. Hsu und J. Y. Wu. „Investigation pre-amorphization implantation on nickel silicide formation“. In 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC). IEEE, 2014. http://dx.doi.org/10.1109/iitc.2014.6831887.
Der volle Inhalt der QuelleSurdeanu, Radu, Bartek J. Pawlak, Richard Lindsay, Mark van Dal, Gerben Doornbos, Charles J. J. Dachs, Youri V. Ponomarev et al. „Pre-amorphization and co-implantation suitability for advanced PMOS devices integration“. In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.b-8-2.
Der volle Inhalt der QuellePark, Soon-Yeol, Bum-Goo Cho und Taeyoung Won. „Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique“. In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418405.
Der volle Inhalt der QuelleXu, Peng, Xiangbiao Zhou, Na Zhao, Dan Zhao und Dongping Wu. „Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing“. In 2013 13th International Workshop on Junction Technology (IWJT). IEEE, 2013. http://dx.doi.org/10.1109/iwjt.2013.6644513.
Der volle Inhalt der QuelleYoshifumi Nishi, Yoshinori Tsuchiya, Atsuhiro Kinoshita, Akira Hokazono und Junji Koga. „Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique“. In 2008 Symposium on VLSI Technology. IEEE, 2008. http://dx.doi.org/10.1109/vlsit.2008.4588615.
Der volle Inhalt der QuelleYu, H., M. Schaekers, A. Hikavyy, E. Rosseel, A. Peter, K. Hollar, F. A. Khaja et al. „Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation“. In 2016 IEEE Symposium on VLSI Technology. IEEE, 2016. http://dx.doi.org/10.1109/vlsit.2016.7573381.
Der volle Inhalt der QuelleHsiao, T. C., P. Liu und J. C. S. Woo. „A novel salicide technology for thin film SOI MOSFETs using Ge pre-amorphization“. In 1996 IEEE International SOI Conference Proceedings. IEEE, 1996. http://dx.doi.org/10.1109/soi.1996.552526.
Der volle Inhalt der QuelleLachal, Laurent, Fabrice Nemouchi, Frederic Mazen, Philippe Rodriguez, Magali Gregoire, Elodie Ghegin, Frederic Milesi et al. „Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process“. In 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, 2018. http://dx.doi.org/10.1109/iit.2018.8807963.
Der volle Inhalt der QuelleTanaka, A., T. Yamaji und S. Nisikawa. „Modeling of Mechanism of Leakage in Shallow p+ /n Junction Formed by Pre-amorphization“. In 1990 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1990. http://dx.doi.org/10.7567/ssdm.1990.c-10-3.
Der volle Inhalt der QuelleHsiao, Ping Liu und Woo. „An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices“. In Symposium on VLSI Technology. IEEE, 1997. http://dx.doi.org/10.1109/vlsit.1997.623712.
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