Dissertationen zum Thema „Plasma immersion ion implantation“
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Chen, Shou-Mian. „Plasma immersion ion implantation of silicon“. Thesis, University of Surrey, 1997. http://epubs.surrey.ac.uk/842893/.
Der volle Inhalt der QuelleAllan, Scott Young. „Ion Energy Measurements in Plasma Immersion Ion Implantation“. Thesis, The University of Sydney, 2009. http://hdl.handle.net/2123/5338.
Der volle Inhalt der QuelleAllan, Scott Young. „Ion Energy Measurements in Plasma Immersion Ion Implantation“. The School of Physics. The Faculty of Science, 2009. http://hdl.handle.net/2123/5338.
Der volle Inhalt der QuelleThis thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.
Oates, Thomas William Henry. „Metal plasma immersion ion implantation and deposition using polymer substrates“. Connect to full text, 2003. http://hdl.handle.net/2123/571.
Der volle Inhalt der QuelleTitle from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.
Oates, T. W. H. „Metal plasma immersion ion implantation and deposition using polymer substrates“. Thesis, The University of Sydney, 2003. http://hdl.handle.net/2123/571.
Der volle Inhalt der QuelleOates, T. W. H. „Metal plasma immersion ion implantation and deposition using polymer substrates“. University of Sydney. Physics, 2003. http://hdl.handle.net/2123/571.
Der volle Inhalt der QuelleKosobrodova, Elena. „Plasma Immersion Ion Implanted Polymers for Antibody Microarray Applications“. Thesis, The University of Sydney, 2014. http://hdl.handle.net/2123/13676.
Der volle Inhalt der QuelleBozkurt, Bilge. „Dynamic Ion Behavior In Plasma Source Ion Implantation“. Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607025/index.pdf.
Der volle Inhalt der QuelleTsoutas, Kostadinos Wallach. „Towards Advanced Bionics: Plasma Immersion Ion Implantation of Conductive Polypyrrole Films“. Thesis, The University of Sydney, 2019. https://hdl.handle.net/2123/22624.
Der volle Inhalt der QuelleWatkins, John H. „The application of plasma immersion ion implantation to sheep shearing combs /“. Title page, contents and abstract only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09phw335.pdf.
Der volle Inhalt der QuelleLui, So-ching, und 雷素青. „Surface bioactivity enhancement of polyetheretherketone (PEEK) by plasma immersion ion implantation“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43572340.
Der volle Inhalt der QuelleLui, So-ching. „Surface bioactivity enhancement of polyetheretherketone (PEEK) by plasma immersion ion implantation“. Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43572340.
Der volle Inhalt der QuelleMichel, Thomas. „Développement de procédés d'implantation ionique par immersion plasma pour le photovoltaïque“. Thesis, Aix-Marseille, 2013. http://www.theses.fr/2013AIXM4307.
Der volle Inhalt der QuelleIon implantation is a major process technology for manufacturing integrated circuits. However, silicon doping by ion implantation for photovoltaics is a relatively recent application, and its growth still faces high costs of integration into solar cell production lines. Plasma-immersion ion implantation (PIII) promises to meet the future industry requirements in terms of costs and productivity.This thesis work has led to the development of processes dedicated to silicon-based solar cell manufacturing using the plasma-immersion ion implanter – PULSION® – designed by IBS. First, we show that PIII enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. Emitters thus fabricated are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters, implanted through plasma immersion and integrated into a low cost solar cell manufacturing line from INES on monocrystalline silicon, enable to raise the conversion efficiency, obtained with conventional POCl3-diffused solar cells, by more than 0.5% absolute to reach efficiencies above 19.3%.Fabrication of p-type boron implanted emitters is also studied in order to improve conversion efficiencies of p-type silicon based solar cells, but also in order to anticipate the technological shift from p-type to n-type silicon material. Thanks to this thesis work, the strength and potential of PIII for photovoltaic applications have been proven and this has convinced IBS to design a PULSION® equipment dedicated to solar cell manufacturing
Ho, Joan Pui Yee. „Plasma Surface Modification of Biomedical Polymers and Metals“. Thesis, The University of Sydney, 2007. http://hdl.handle.net/2123/2463.
Der volle Inhalt der QuelleHo, Joan Pui Yee. „Plasma Surface Modification of Biomedical Polymers and Metals“. University of Sydney, 2007. http://hdl.handle.net/2123/2463.
Der volle Inhalt der QuelleBiomedical materials are being extensively researched, and many different types such as metals, metal alloys, and polymers are being used. Currently used biomedical materials are not perfect in terms of corrosion resistance, biocompatibility, and surface properties. It is not easy to fabricate from scratch new materials that can fulfill all requirements and an alternative approach is to modify the surface properties of current materials to cater to the requirements. Plasma immersion ion implantation (PIII) is an effective and economical surface treatment technique and that can be used to enhance the surface properties of biomaterials. The unique advantage of plasma modification is that the surface properties and functionalities can be enhanced selectively while the favorable bulk attributes of the materials such as strength remain unchanged. In addition, the non-line of sight feature of PIII is appropriate for biomedical devices with complex geometries such as orthopedic implants. However, care must be exercised during the plasma treatment because low-temperature treatment is necessary for heat-sensitive materials such as polymers which typically have a low melting point and glass transition temperature. Two kinds of biomedical materials will be discussed in this thesis. One is nickel titanium (NiTi) alloy which is a promising orthopedic implant material due to its unique shape memory and superelastic properties. However, harmful ions may diffuse from the surface causing safety hazards. In this study, we investigate the properties and performance of NiTi after nitrogen and oxygen PIII in terms of the chemical composition, corrosion resistance, and biocompatibility. The XPS results show that barrier layers mainly containing TiN and TiOx are produced after nitrogen and oxygen PIII, respectively. Based on the simulated in vitro and electrochemical corrosion tests, greatly reduced ion leaching and improved corrosion resistance are accomplished by PIII. Porous NiTi is also studied because the porous structure possesses better bone ingrowth capability and compatible elastic modulus with human bones. These advantages promote better recovery in patients. However, higher risks of Ni leaching are expected due to the increased exposed surface area and rougher topography than dense and smooth finished NiTi. We successfully apply PIII to porous NiTi and in vitro tests confirm good cytocompatibility of the materials. The other type of biomedical materials studied here is ultra-high molecular weight polyethylene (UHMWPE) which is a potential material for use in immunoassay plates and biosensors. In these applications, active antibodies or enzymes attached to a surface to detect molecules of interests by means of specific interactions are required. Moreover, the retention of enzyme activity is crucial in these applications. Therefore, the aim of this study is to investigate the use of PIII to prepare UHMWPE surfaces for binding of active proteins in terms of the binding density and ‘shelf life’ of the treated surfaces. Argon and nitrogen PIII treatments are attempted to modify the surface of UHMWPE. Horseradish peroxidase (HRP) is selected to conduct the protein binding test since it is a convenient protein to assay. Experimental results show that both PIII treated surfaces significantly improve the density of active HRP bound to the surface after incubation in buffer containing HRP. Furthermore, the PIII treated surfaces are found to perform better than a commercially available protein binding surface and the shelf life of the PIII treated surfaces under ambient conditions is at least six months. In conclusion, a biocompatible barrier layer on NiTi and a protein binding surface on UHMWPE is synthesized by PIII. The surface properties such as corrosion resistance and functionality on these two different types of substrates are improved by PIII.
Lee, Shih-Liang. „Plasma-based modifications of synthetic vascular grafts“. Thesis, University of Sydney, 2020. https://hdl.handle.net/2123/24373.
Der volle Inhalt der QuelleKouadri, Boudjelthia El Amin. „Piégeage des impuretés métalliques présentes dans le silicium destiné au photovoltaïque par plasma immersion ion implantation (PIII)“. Thesis, Orléans, 2012. http://www.theses.fr/2012ORLE2089.
Der volle Inhalt der QuelleExtraction of silicon metal impurities to be used for photovoltaic by plasma immersion ion implantation (PII)
Motloung, Setumo Victor. „Intense pulsed neutron generation based on the principle of Plasma Immersion Ion Implantation (PI3) technique“. Thesis, University of the Western Cape, 2006. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_9599_1182748458.
Der volle Inhalt der QuelleThe development of a deuterium-deuterium/ tritium-deuterium (D-D/ D-T) pulsed neutron generator based on the principle of the Plasma Immersion Ion Implantation (PI3) technique is presented, in terms of investigating development of a compact system to generate an ultra short burst of mono-energetic neutrons (of order 1010 per second) during a short period of time (<
20&mu
s) at repetition rates up to 1 kHz. The system will facilitate neutron detection techniques, such as neutron back-scattering, neutron radiography and time-of-flight activation analysis.
Aspects addressed in developing the system includes (a) characterizing the neutron spectra generated as a function of the target configuration/ design to ensure a sustained intense neutron flux for long periods of time, (b) the system was also characterised as a function of power supply operating conditions such as voltage, current, gas pressure and plasma density.
Chong, Yu-wah, und 莊瑜華. „In vitro and in vivo study of plasma immersion ion implantation (PIII)treated polyetheretherketone (PEEK)“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hub.hku.hk/bib/B4985883X.
Der volle Inhalt der Quellepublished_or_final_version
Orthopaedics and Traumatology
Master
Master of Philosophy
Tran, Clara. „Plasma activated polymers for yeast and enzyme immobilization“. Thesis, The University of Sydney, 2013. http://hdl.handle.net/2123/10127.
Der volle Inhalt der QuelleJaichuen, C., R. Chundet, L. D. Yu, P. Thongkumkoon und S. Anuntalabhochai. „Effect on Genetic Mutation Induction from Nano-Ranged Low-Energy Plasma Ion Bombardment of DNA and Gene Fragment“. Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34948.
Der volle Inhalt der QuelleMaury, Mathieu. „Simulation numérique de la fragmentation d'un précurseur de dopage au sein d'un réacteur d'implantation ionique par immersion plasma“. Thesis, Sorbonne Paris Cité, 2015. http://www.theses.fr/2015USPCD057/document.
Der volle Inhalt der QuelleNumerical models have been developped to simulate the plasma present inside a plasma immersion ion implantation reactor. Their goal is to estimate the impact of the reactor’s settings on the plasma parameters relevant for ion implan-tation. The complex geometry of the reactor renders its modelling difficult, because of the stiff spatial and temporal gradients expected, so a two-step simulation stra-tegy was adopted : – A global model of the plasma source, coupled to a detailed volume chemistry module, allows to determine the time evolution of the plasma composition according to the radio-frequency power injected in the source.– A 1D PIC-MC model of the sheath facing the substrate describes the dyna-mics of the expanding sheath and allows to determine the ion impact energy distribution function and corresponding implantation profiles. Determination of the couplings between the plasma source and the implantation chamber makes possible to optimize the doping process, since the reactor’s opera-tional settings can then be adjusted to minimize the doping depth after implanta-tion
Cheng, Xinying. „Shape Memory Polymers with Multifaceted Tunability and Bio-specificity“. Thesis, The University of Sydney, 2017. http://hdl.handle.net/2123/17130.
Der volle Inhalt der QuelleUrbonavičius, Marius. „Titano okisdų formavimas vandens garų plazmoje“. Master's thesis, Lithuanian Academic Libraries Network (LABT), 2012. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2012~D_20120202_132623-41801.
Der volle Inhalt der QuelleTypes of plasma, characteristics and plasma interaction with solids are discussed in the literature review of this paper. Also, the plasma immersion ion implantation are described. Water vapour plasma are briefly discussed. Titanium oxide structure and it‘s usage for catalyst which could split water molecules are reviewed. Magnetron deposition are explained in this paper. The titanium film was oxidized by water vapour plasma on experiment. The oxidation of titanium depends on many processes in plasma (adsorption, trapping, formation of oxygen vacancies and etc.). Appliance of titanium oxide is very large in recent times. Experimental technology are discussed and plasma treated films are analysed. Titanium oxidation was analysed by SEM, XRD, AES, GDOES. Oxidation mechanism was explained in this paper.
Kaeppelin, Vincent. „Caractérisation d'une source de plasma hélicon et application à l'implantation ionique par immersion plasma“. Aix-Marseille 1, 2002. http://www.theses.fr/2002AIX11027.
Der volle Inhalt der QuelleKatsifis, Georgio Andrew. „Analysis and Characterisation of Plasma Treated PEEK Scaffolds and their Implementation in Radiotherapy“. Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/29503.
Der volle Inhalt der QuelleDuchaine, Julian. „Caractérisation de l'implantation par immersion plasma avec pulsion(r) et intégration dans la fabrication de transistors FD-SOI et Trigate“. Toulouse 3, 2012. http://www.theses.fr/2012TOU30197.
Der volle Inhalt der QuelleThe industry of microelectronics will update regularly its "roadmap" for its international technological developments. The development of new technological processes is accelerating, driven by the need for portable electronics, personal computers with more powerful, telecommunications and multimedia, as well as the very important development of electronics in the automobile world. This race requires the integration of implantation processes with low energy and high dose (based on components). To meet the demand of industrial, IBS has developed its own prototype of plasma immersion ion implanter (PULSION (r)). This type of tool is very attractive to manufacturers because it offers performance and production rates (wafer / hour) with a lower manufacturing cost than conventional implanter (ion beam). This thesis aims to characterize the processes of P-type implantation by plasma immersion using the tool installed at the LETI "PULSION "to integrate in the manufacture of new transistors generations (FD-SOI ultimate Trigate for nano-wires). Many experimental studies have been performed to understand the physical and chemical mechanisms involved during the plasma immersion implantation. Understanding these mechanisms is much more complicated than ion beam implantation because the substrate is constantly immersed in the plasma and all ion species are implanted into the substrate. So, we observed different behavior of the implanted boron atoms between the two implantation techniques. The plasma and implantation conditions were optimized in order to integrate Pulsion (r) processes in the manufacture of FD-SOI and Trigate transistors. The first results show that plasma immersion implantation provides, on planar components (FD-SOI), the same electrical performance as ion beam implanter. Against by performance improved significantly on Trigate transistors. Further developments processes should improve again its performance
Barakel, Damien. „Implantations d'ions H+ et BF2+ dans du silicium par faisceau et immersion plasma. Application aux cellules solaires“. Aix-Marseille 3, 2004. http://www.theses.fr/2004AIX30065.
Der volle Inhalt der QuelleIon beam implantation technique is currently used in silicon technology, however it could be replaced by plasma immersion ion implantation. In this work we investigate the effects of a heavy hydrogen ion dose implantation by both preceding techniques, as well as the formation of P+-N junctions by BF3 plasma ion immersion. We have found that hydrogen can form shallow donors and that P type silicon can be converted in N type, close to the surface, at a depth corresponding to the projected range. Multicrystalline silicon wafers were improved after hydrogen plasma immersion, due to the passivation of bulk imperfections. Ultra shallow junctions can be obtained by plasma immersion doping at low energy. Solar cells have been prepared using both techniques
Vervisch, Vanessa. „Etude et réalisation de jonctions ultra fines P+N par la technique d'implantation d'ions par immersion plasma. Application aux cellules photovoltaïques“. Aix-Marseille 3, 2007. http://www.theses.fr/2007AIX30065.
Der volle Inhalt der QuelleThis study describes the plasma immersion ion implantation as a potential tool in order to realize ultra shallow junctions (USJ). The PIII prototype called PULSION® used in this work has been designed and developed by IBS Company. Boron SIMS profiles obtained on PULSION® as-implanted samples reveal implantation depths varying from few nanometers up to thirty nanometers. These results led us to focus on post implantation annealings in order to obtain the best compromise between junction depth (Xj) and sheet resistance (Rsq). Different annealing techniques such as RTA, Spike and LASER have been processed and compared after PIII. Electrical and physico-chemical characterisations set forth the laser annealing process. The Pre-Amorphization Implantation (PAI) has been implemented in order to reduce the channelling effect. The best results were obtained with germanium ions. The amorphized silicon with a thickness estimated to 20 nm according to TEM pictures, appeared to cause a decreasing of the junction depth from 30 to 24 nm after annealing. PIII technology was applied to the conception of photodiode emitters. Electrical properties of the realized device revealed to be satisfactory. Moreover, the resulting shallow junction allowed to improve the internal quantum efficiency at short wavelengths, which is particularly adapted to space applications
Hayes, Maxim. „Intégration de collecteurs de charges avancés dans les cellules solaires bifaciales à haut rendement : vers un procédé générique pour les nouveaux matériaux silicium“. Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0519.
Der volle Inhalt der QuelleThanks to a relatively simple fabrication process and high conversion efficiency values the PERC structure is well established at the industrial level. Nevertheless, industrial PERC solar cells performances are mostly limited by two charge carrier recombination sources: P thermally diffused emitter on the front side and the Al-Si interfaces at the rear contacts. The main goal of this work aims at limiting both recombination sources. A selective emitter (SE) obtained by plasma immersion ion implantation (PIII) is developed for an integration on the front side; whereas a B-doped polysilicon (poly-Si) on oxide passivated contact (PC) is integrated on the back side. The second goal of this work consists in evaluating the compatibility between these advanced carrier collectors and directionally solidified Si materials. SE featuring good geometrical properties and a well-controlled doping were fabricated thanks to an in situ localized doping process obtained with a specific mask developed for PIII. Besides, several metal deposition technologies were investigated for the poly-Si(B). Fire-through screen-printing appears as the most promising approach so far. Indeed, the deposition of a non-sacrificial hydrogen-rich layer allowed to reach an excellent surface passivation level for solar cell precursors. However, the specific contact resistivity obtained remains too high for an optimal cell integration. Lastly, the fabrication of poly-Si PC showed excellent external gettering efficiencies for multicrystalline Si. Thus, the potential of the developed cell structure to be integrated with low-cost and low carbon footprint materials is encouraging
Veau, Antoine. „Intégration de jonctions ultra minces avec passivation tunnel : application aux générations avancées de cellules PV silicium homojonction“. Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT004.
Der volle Inhalt der QuelleThe main objective of this thesis work is to study ways of improvement for the fabrication of n+ doping used as emitter zone in industrial PV cells made of crystalline silicon (c-Si). The plasma immersion ion implantation (PIII) technique allows precise control of the doping profiles of the implanted areas. The influence of the implantation dose and the activation annealing temperature of dopants on the doping profiles produced on p-type c-Si substrates were first studied. These dopings were integrated as emitters in Al-BSF (Aluminum Back Surface Field) and PERC (Passivated Emitter and Rear cells) cells. A detailed analysis of the losses by recombination of the charge carriers as well as the resistive losses was carried out. For an optimized doping profile, the best values of emitter saturation current densities were 70 fA / cm². After cells optimization, record conversion efficiencies of 19.7% and 21% were obtained with Al-BSF and PERC cells, respectively. The PIII technique is particularly suitable for making ultra-thin junctions, compared to implantation by ion beams. Thus, different dopings were tested by variation of the PIII dose and of the annealing temperature on stacks consisting of layers of polysilicon (poly-Si) deposited by PECVD on p-type c-Si substrates, whith surfaces previously passivated by a tunnel oxide. Excellent state-of-the-art passivation properties (i-Voc~730mV and J0 ~ 5fA/cm²) were obtained after passivation of the surface of poly-Si layers by hydrogenated SiNx layers and firing annealing. With an optimized doping profile, the study of losses by recombination on Al-BSF cells integrating the polyslicon layer doped with PIII as an emitter revealed an improvement in the values of saturation current densities of the emitter (54 fA/cm²)
Walia, Rashi. „Solid-Hydrogel Hybrid Structural Materials for Biomedical Devices and Applications“. Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/29549.
Der volle Inhalt der QuelleAssmann, Andre. „AÇO DUPLEX LDX 2101 SUBMETIDO À NITRETAÇÃO POR IMPLANTAÇÃO IÔNICA, IMPLANTAÇÃO IÔNICA POR IMERSÃO EM PLASMA E DESCARGA LUMINOSA: PROPRIEDADES MECÂNICAS E TRIBOLÓGICAS“. UNIVERSIDADE ESTADUAL DE PONTA GROSSA, 2011. http://tede2.uepg.br/jspui/handle/prefix/890.
Der volle Inhalt der QuelleCoordenação de Aperfeiçoamento de Pessoal de Nível Superior
In the present work showing the results on mechanical and tribological properties of duplex stainless steel LDX2101 nitriding by Ion Implantation (II), Plasma Immersion Ion Implantation (PI3) and Glow Discharge (GD). Nitrogen ion implantation was performed at room temperature and 350 C. The nitrogen fluencies were combined to obtain an atomic nitrogen concentration of 27 %. The PI3 was carried out with temperatures of 300 and 350 C working in N2 atmosphere during 3 hours. For GD, the working conditions were gas mixture N2/H2 (in the ratio 80%/20%, 60%/40% and 20%/80%) and N2/CH4 (in the ratio 98%/02%) during 3 hours at temperatures of 300, 350 and 380 C. Structural characterizations of the modified layers were performed by X-Ray Diffraction (XRD) with Bragg-Brentano geometry. Hardness was obtained by instrumented indentation using Oliver and Pharr method’s with Berkovich indenter. Tribological tests were evaluated by reciprocating sliding with a WC(Co) sphere (counter body). XRD patterns for II samples showing only the formation of γN, however, samples treated by GD and PI3 showed the formation of γ’Fe4N and Fe2+XN, over there γN, as a function of the working temperature and nitriding atmosphere. After the nitriding hardness values between 8 and 20 GPa in comparison to 3 GPa of the bulk was obtained. The hardness profile of samples treated by GD at 350 and 380 C exhibit plateaulike for values of hardness between 13 and 20 GPa, indicate the formation of a thicker nitrited layer. The friction coefficient for II samples showed a strong adhesive wear. PI3 samples exhibit long running-in regimes compared to II and untreated samples. GD samples showing a predominant abrasive wear because ploughing of surface for asperities and wear particles formed between the surface and counter body. The significant decrease in the wear was observed in all GD samples, with a reduction of one order of magnitude compared to untreated sample.
No presente trabalho, são apresentados os resultados sobre as propriedades mecânicas e tribológicas do aço inoxidável duplex LDX 2101 nitretado por Implantação Iônica (II), Implantação Iônica por Imersão em Plasma (3IP) e Descarga Luminosa (DL). A Implantação Iônica de nitrogênio foi realizada em temperatura ambiente e em 350 C. As fluências utilizadas foram combinadas para obter uma concentração de átomos de nitrogênio de 27 %. A nitretação 3IP, foi realizada nas temperaturas de 300 e 350 C em atmosfera de N2 durante 3 horas. Para o tratamento por DL as condições de tratamento foram em diferentes atmosferas de N2/H2 (nas proporções de 80%/20%, 60%/40% e 20%/80%) e N2/CH4 (na proporção de 98%/02%) durante 3 horas nas temperaturas de 300, 350 e 380 C. A caracterização estrutural das camadas modificadas foi obtida através de Difração de Raios-X (DRX) com geometria Bragg-Brentano. Os perfis de dureza foram obtidos por indentação instrumentada usando o método de Oliver e Pharr com indentador do tipo Berkovich. Testes tribológicos foram realizados com tribômetro do tipo pino sobre disco em movimento recíproco com uma esfera de WC(Co) de contra corpo. Os padrões de DRX para amostras tratadas por II apresentaram apenas a formação de γN, contudo, as amostras tratadas por DL e 3IP apresentaram a formação de γ’-Fe4N e Fe2+XN, além de γN, como função da temperatura de tratamento e da atmosfera de nitretação. Após as nitretações durezas entre 8 e 20 GPa em comparação a 3 GPa para o substrato foram obtidas. Perfis de dureza para amostras tratadas por DL em 350 e 380 C exibiram valores entre 13 e 20 GPa em forma de platô, indicando a formação de uma espessa camada nitretada. O coeficiente de atrito para as amostras tratadas por II apresentaram um forte desgaste adesivo. Amostras tratadas por 3IP exibiram longos regimes de acomodação comparados as amostras tratadas por II e a amostra referência. Amostras tratadas por DL apresentaram um predominante desgaste abrasivo devido à deformação plástica da superfície causada pelas asperidades e pelas partículas de desgaste formadas entre a superfície e o contra corpo. Uma significante diminuição no desgaste foi observada em todas as amostras tratadas por DL, com uma redução de uma ordem de grandeza quando comparado a amostra sem tratamento.
Oliveira, Willian Rafael de. „INFLUÊNCIA DOS PARÂMETROS DE IMPLANTAÇÃO IÔNICA POR IMERSÃO EM PLASMA NA EFICIÊNCIA DA NITRETAÇÃO DO AÇO INOXIDÁVEL SUPER DUPLEX“. UNIVERSIDADE ESTADUAL DE PONTA GROSSA, 2016. http://tede2.uepg.br/jspui/handle/prefix/858.
Der volle Inhalt der QuelleThis work aimed at study the correlation of variables in a plasma immersion ion implantation (PIII) system, as well as their synergistic combination for the nitriding of the UNS S32750 super duplex stainless steel ( SD 2507). The research comprised two phases, as follows. (i) Study of the system. The interconnection of variables, namely voltage (V), pulse width (L), frequency (f) and current (I), were systematically analyzed with respect to the cathode heating. A mathematical formulation was proposed for the ion average energy and the substrate temperature, which took into consideration the energy conservation in the system, and the basic theories for plasma and sheaths and the ion interaction with matter. Hereafter, such model is thought to be experimentally demonstrated, allowing inferring the actual PIII fraction of energy that is converted to heat. (ii) N-PIII of the SD. Mirror-like samples were nitrided under different V, f and L combinations, leading to the temperatures 295, 325, 355 and 400 oC. The surface characterization methods were the optical, field emission electron, and atomic force microscopies, X-ray diffraction, energy dispersive X-ray spectroscopy, backscattered electron diffraction, and instrumented indentation. The austenite and ferrite fraction in the as received material amounted to 43,7 % and 56,3 %, respectively. After nitriding, the modified layers were 0,5-1,5 m thick. Up to 355 ºC, the expanded phase N was produced in originally austenite grains, whereas Fe2-3N e Fe4N precipitates were formed in ferrite grains. The hardness profiles were similar among different temperatures and between the two phases in the same sample. However, in ferritic regions, the mechanism for plastic deformation changed from ductile to brittle. In the 400 ºC treatments, only N was formed. Finally, a correlation for the production of the expanded phase in PIII and the mean pulse energy Ei was attained, given by and . Where IN and I are the integrated intensities of diffraction peaks for austenite and expanded austenite, respectively.
O objetivo deste trabalho foi estudar o comportamento de um sistema de implantação iônica por imersão em plasma (PIII: “plasma immersion ion implantation”), em função de suas variáveis, bem como a influência destas na nitretação de superfícies do aço super duplex UNS S32750 (ou SD 2507). O trabalho foi dividido em dois momentos, como segue. (i) Estudo do sistema. O comportamento das variáveis associadas à implantação iônica, especificamente tensão (V), largura de pulsos (L), frequência (f) e corrente (I), foi sistematicamente analisado com relação ao aquecimento do cátodo. Com base na conservação de energia, física de plasmas e bainhas catódicas e interação de íons com a matéria, propôs-se uma formulação matemática relacionado a energia média dos íons à temperatura do substrato, a qual poderá, futuramente, ser posta à prova experimental, mensurando-se a fração de energia que é, de fato, transformada em calor. (ii) Nitretação por PIII do SD. Amostras com superfície especular foram nitretadas sob diferentes combinações de V, f e L, em temperaturas de 295, 325, 355 e 400 oC. As superfícies foram caracterizadas por métodos de microscopia (ótica, eletrônica com efeito de campo, de força atômica), difração de raios X, espectroscopia de raios X por energia dispersiva, difração de elétrons retroespalhados, e indentação instrumentada. O SD apresenta estrutura cristalina de austenita e ferrita na proporção de 43,7/56,3. A nitretação produziu camadas modificadas com espessura de 0,5 a 1,5 m. Observou-se, nos tratamentos até 355 ºC, a formação da fase expandida N nos grãos que originalmente eram austenita, e de precipitados de nitretos -Fe2-3N e -Fe4N em grãos de ferrita. Embora não houve diferenças significativas nos perfis de dureza, tanto entre as temperaturas quanto entre as fases em uma mesma amostra, o mecanismo de deformação plástica nas regiões ferríticas transitou de dúctil para frágil. Nas nitretações em 400 ºC, houve apenas a formação de N. Finalmente, determinou-se que a obtenção da fase expandida por PIII no SD se relaciona com a energia média por pulso Ei por e . Onde I e I são as intensidades integradas dos picos de difração da austenita expandida e da austenita, respectivamente.
Venhaus, Thomas Joseph. „Plasma source ion implantation of high voltage electrodes“. W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623981.
Der volle Inhalt der QuelleFu, King Yu. „Plasma implantation and deposition for advanced materials surface modification /“. access full-text access abstract and table of contents, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b19887310a.pdf.
Der volle Inhalt der Quelle"Submitted to Department of Physics and Materials Sciences in partial fulfillment of the requirements for the degree of Philosophy of Doctor." Includes bibliographical references.
Nassar, Rafat Mohammad. „A new tritium monitor design based on plasma source ion implantation technique“. Thesis, University of St Andrews, 1997. http://hdl.handle.net/10023/13373.
Der volle Inhalt der QuelleArab, Zeinab. „Plasma based ion implantation and plasma hydrogenation of silicon for photovoltaics : influence on the electrical properties“. Poitiers, 2009. http://www.theses.fr/2009POIT2263.
Der volle Inhalt der QuelleCe rapport présente l'histoire et le statut du développement de l'industrie photovoltaïque aujourd'hui et dans l'avenir. Le matériel de base dans ce domaine est le silicium cristallin. Bien que c-Si ne soit pas le meilleur choix du point de vue de la physique d'état solide il domine encore le marché. Une partie importante de cette étude est consacrée à l'amélioration de la qualité du c-Si via la passivation par hydrogénation et l'implantation ionique par immersion plasma (PIII). Des expériences ont été effectuées afin de comparer le PIII avec la méthode conventionnelle d'implantation (implantation en ligne). Pour les expériences de PIII, les substrats utilisés étaient du silicium mono cristallin de type p d'orientation (100) avec une épaisseur d'environ 700 µm, une résistivité estimée entre 5 et 10 Ωcm et une concentration de dopant de 1015 cm-3, alors que pour les expériences d'hydrogénation nous avons utilisé des plaquettes de silicium multi cristallin de type p fabriquées par Photowat d'une épaisseur d’environ 300 µm, une résistivité de 1 à 2 Ωcm et une concentration de dopant de 1016 cm-3. L'implantation a été réalisée sous une pression de 2 Pa avec le débit d'hydrogène réglé à 20 sccm. Ensuite, le plasma a été crée à l'aide d'une puissance incidente de 700 W avec des impulsions de 20 kV d'une durée de 10 µs et une fréquence de 200 Hz. Différentes doses de 1015 à 2×1017 at. H/cm2 d'hydrogène ont été appliquées aux échantillons. Dans le cas de l'hydrogénation, la création du plasma est identique à celle du PIII mais avec différentes température (300°C-800°C) et pressions (2-12 Pa). Les résultats de la microscopie électronique en transmission révèlent la formation de différents types de défauts. Pour les doses assez base de 1015 à 1016 at. H/cm2 les modifications sont principalement des « platelets », des boucles de dislocations et des défauts interstitiels. Les doses plus élevées (1016 à 1017 at. H/cm2) permettent la formation des « platelets » d'orientation (100) ainsi que (111) et augmentent le nombre de dislocations et de microcavités qui favorisent la formation des claques (blistering et exfoliation). Cependant, les résultats de TEM ne montrent pas les importantes modifications microstructurales après hydrogénation. Les mesures de NRA ont été réalisées pour déterminer le profil d'hydrogène dans les échantillons implantés ainsi que dans les échantillons hydrogénés. La concentration d'hydrogène augmente avec l'augmentation de la dose d'implantation et peut acquérir jusqu'au 25 at. % (dose = 2×1017 at. H/cm2). Les mesures de NRA montrent que pour les échantillons hydrogénés à des températures relativement élevés la concentration d'hydrogène est faible. La concentration maximale d'hydrogène a été obtenue à partir d'un échantillon hydrogéné à 400°C-2 heures. La méthode de mesure de la durée de vie de Sinton a été utilisée lors de cette étude pour déterminer la durée de vie des porteurs dans le silicium multi cristallin. La passivation via hydrogénation est encore plus efficace à de basses températures (inférieur à 600°C) car sous les températures élevées l'exo-diffusion d'hydrogène sera plus prononcée et va influencer l'effet d'hydrogénation
Batocki, Regiane Godoy de Santana [UNESP]. „Implantação iônica por imersão em plasma - IIIP - de argônio, nitrogênio e hélio em hexametildissilazano polimerizado a plasma“. Universidade Estadual Paulista (UNESP), 2009. http://hdl.handle.net/11449/103743.
Der volle Inhalt der QuelleCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Filmes finos polimerizados a plasma apresentam várias aplicações nas indústrias óticas, elétrica, mecânica de alimentos, de biomateriais entre outras, devido suas interessantes propriedades químicas e físicas. No entanto, as aplicações para os filmes finos podem ser limitadas em função de algumas de suas características mecânicas e de superfície. Neste trabalho, filmes finos poliméricos foram depositados por radiofrequência a partir de plasmas de hexametildissilazano mantido a baixa pressão. Posteriormente, foram implantados íons de argônio, hélio e nitrogênio nestes filmes através da implantação iônica por imersão a plasma (IIIP). Após os tratamentos, os filmes finos provenientes da polimerização a plasma do hexametildissilazano apresentaram modificações em suas estruturas moleculares e composição química através das análises infravermelha e XPS. O XPS revelou um aumento nas concentrações de oxigênio e decréscimo de carbono e nitrogênio. Este fato indica aumento no nível e entrelaçamento, ramificação e reticulação das cadeias poliméricas para todos os íons implantados. Verificou-se também que a IIIP promoveu mudanças na molhabilidade com variações nos ângulos de contato de 100° para 10°; alterações nos índices de refração entre 1,65 a 2,10; modificações na dureza e módulo elástico de 0,8 a 3,3 GPa e 6,0 a 52,0 GPa respectivamente, assim como redução na taxa etching de 34,0 para 20,0 Å/min.
Plasma polymerized thin films have many applications in optical, electrical, mechanical, food, biomaterial industries among others, due to their interesting chemical and physical properties. Polymer thin films applications, however, can be limited because of some mechanical and surface characteristics. In this work, thin polymer films were deposited from radiofrequency plasmas of hexamethyldisilazane at low pressure. Then, these films were implanted with argon, helium and nitrogen ion, by plasma immersion ion implantation (PIII). After the treatments, plasma polymerized hexamethyldisilazane thin films presented modifications in their molecular structure and chemical composition by infrared and XPS analysis. XPS revealed an increase in the oxygen, decrease in nitrogen and carbon concentrations. This fact indicates increased crosslinking of the polymeric chains of all implanted ions. It was also verified that a PIII caused modification in wettability, changing the contacts angles from 100° to 10°. Modifications were also observed in the refractive index from 1,65 to 2,10; in hardness and in the elastic modulus from 0,8 a 3,3 GPa and 6,0 to 52,0 GPa respectively. The study showed a decrease in etching rate from 34,0 to 20,0 Å/min.
Batocki, Regiane Godoy de Santana. „Implantação iônica por imersão em plasma - IIIP - de argônio, nitrogênio e hélio em hexametildissilazano polimerizado a plasma /“. Guaratinguetá : [s.n.], 2009. http://hdl.handle.net/11449/103743.
Der volle Inhalt der QuelleAbstract: Plasma polymerized thin films have many applications in optical, electrical, mechanical, food, biomaterial industries among others, due to their interesting chemical and physical properties. Polymer thin films applications, however, can be limited because of some mechanical and surface characteristics. In this work, thin polymer films were deposited from radiofrequency plasmas of hexamethyldisilazane at low pressure. Then, these films were implanted with argon, helium and nitrogen ion, by plasma immersion ion implantation (PIII). After the treatments, plasma polymerized hexamethyldisilazane thin films presented modifications in their molecular structure and chemical composition by infrared and XPS analysis. XPS revealed an increase in the oxygen, decrease in nitrogen and carbon concentrations. This fact indicates increased crosslinking of the polymeric chains of all implanted ions. It was also verified that a PIII caused modification in wettability, changing the contacts angles from 100° to 10°. Modifications were also observed in the refractive index from 1,65 to 2,10; in hardness and in the elastic modulus from 0,8 a 3,3 GPa and 6,0 to 52,0 GPa respectively. The study showed a decrease in etching rate from 34,0 to 20,0 Å/min.
Orientador: Rogério Pinto Mota
Coorientador: Deborah Cristina Ribeiro Santos
Banca: Roberto Yzumi Honda
Banca: Elson de Campos
Banca: Emerson Ferreira de Lucena
Banca: José Roberto Ribeiro Bortoletto
Doutor
Tuckute, S., und L. L. Pranevicius. „Separation of Hydrogen from Water Molecules by Ion Implantation into Thin Ti Films“. Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35410.
Der volle Inhalt der QuelleMeyer, Kevin Alan. „Development of a plasma source ion implantation facility for the modification of materials' surfaces“. Doctoral thesis, University of Cape Town, 2001. http://hdl.handle.net/11427/6538.
Der volle Inhalt der QuelleIn Plasma Source Ion Implantation high energy [10-50 keV] plasma ions are implanted into materials to modify surface properties, achieving surface hardening, increased wear and corrosion resistance. Plasma Source Ion Implantation is alos used for doping semiconductors and could form an essential step in the manufacture of multilayered wafers. This thesis describes the development and construction of the plasma implantation facility at the Materials Research Group of the Naitonal Accelerator Centre; in particular, the development of the Plasma Assisted Materials Modification Laboratory, the analytical tools available at the Materials Research Group and surrounding universities, basic research into the implantation of steels, the x-rays emitted as a side-effect of plasma source ion implantation and the development of an analytical technique of interest to silicon wafer-cutting technologies.
LE, COEUR FREDERIC. „Décharges excitées à la résonance cyclotronique électronique distribuée et générateurs à transformateur d'imulsions pour implantation ionique par immersion plasma“. Grenoble INPG, 1999. http://www.theses.fr/1999INPG0127.
Der volle Inhalt der QuelleMarot, Laurent. „Développement d'un nouveau système d'implantation ionique en immersion plasma et analyses des processus de nitruration“. Phd thesis, Université de Poitiers, 2001. http://tel.archives-ouvertes.fr/tel-00003632.
Der volle Inhalt der QuelleFouquet, Valérie. „Etude des mécanismes d'implantation et diffusion lors de la nitruration du titane et de Ti-6Al-4V par implantation ionique en immersion plasma“. Poitiers, 2004. http://www.theses.fr/2004POIT2271.
Der volle Inhalt der QuelleThe aim of this work is to study the implantation and diffusion mechanisms occuring during nitridation of titanium and of Ti-6Al-4V by plasma based ion implantation. Chemical and microstructural studies allow the determination of the characteristics of the phases formed depending on the treatment parameters. The implantation is the main formation mechanism of nitrides at low temperature whereas the nitridation is mainly controlled by the thermally activated diffusion at high temperature. By means of a numerical resolution of the equation of diffusion taking into account the experimental observations, implantation-induced defects have been shown to enhance the diffusion coefficient in the nitride layer. The in-depth nitridation of titanium is however favoured by the continuously implanted nitrogen in the nitride layer which acts as an in-depth source. On the contrary, in a thermal-activated treatment, the nitride forms a diffusion barrier which limits the later incorporation of nitrogen
Vempaire, David. „Modification des propriétés magnétiques de couches minces de nickel et de manganèse et réalisation de microstructures magnétiques par implantation ionique en immersion plasma“. Université Joseph Fourier (Grenoble), 2004. http://www.theses.fr/2004GRE10252.
Der volle Inhalt der QuelleWE FIRST OF ALL STUDIED THE DEPOSIT OF THIN LAYERS OF MANGANESE AND NICKEL ON SILICON 100 USING THE PULVERIZATION ASSISTED BY MICROWAVE MUL TIDIPOLAR PLASMA TECHNIQUE. THE LAYERS OF NICKEL AND MANGANESI DEPOSITED WERE TH EN IMPLANTED WITH NITROGEN BY USING THE PLASMA BASED IMMERSION IMPLANTATION TECHNIQUE ASSISTED BY A MICROWAVE DE CR PLASMA. THIS TECHNIQUE ENABLED TO SYNTHESIZE THE NITRIDES NI3N AND MN4N lN SPITE OF THE METASTABILITY OF NI3N AND THE STRONG CHEMICAL REACTIVITY OF MANGANESE WITH OXYGEN. THEN WE HAVE IMPLANTED NITROGEN lN A DOUBLE LAYER NI ON MN SIMUL TANEOUSL Y TO NITRIDE THEM BY MAKING NI3N STACKING ON MN4N. THE METASTABILITY OF NI3N AND THE STRONG AFFINITY OF MANGANESE FOR NITROGEN, HAVE MADE NITROGEN IMPLANTED ENTIREL Y DIFFUSING lN MANGANESE DURING THE ANNEALING. THEN, WE HAVE INITIATED THE STUDY OF THE REALIZATION OF A MAGNETIC MICROSTRUCTURE BY NITROGEN IMPLANTATION lN A LAYER OF NICKEL THROUGH AN ORGANIC MASK
Renaud, Justine. „Application des faisceaux d'ions focalisés à la création de centres NV du diamant. Caractérisation de ces faisceaux d'ions issus d'une source plasma“. Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLN027.
Der volle Inhalt der QuelleFor more than 45 years, focused ion beams FIB columns based on liquid metal ion sources (Ga) have been used for the development, modification or analysis of nanostructures. Much more recently, less than 10 years ago, plasma sources are integrated in FIBs to meet the needs of failure analysis as well as sample preparation. This plasma FIB market has grown strongly in recent years and is accompanied by a permanent improvement of the specifications of this young technology. Therefore, it is necessary to characterize these sources in order to improve the associated optics. In this thesis, we present the development of a new FIB column working with a plasma ion source, dedicated to the creation of NV centers, as well as the development of a system dedicated to the characterization of the performances of this source.Given the context of this work, the first part of the manuscript is dedicated to the presentation of FIB technology, its operation and its applications. In the second chapter, we present the development of a FIB column dedicated to the implantation of nitrogen ions for the controlled creation of NV color centers in diamonds. We begin by introducing the unique properties of NV centers as well as the usual methods for their creation. Then we present the different steps of the characterization of this FIB column. The implantations carried out during this work have been used for the development of a new application of doped diamonds.In the last chapter of the thesis, we are interested in designing a test bench to obtain the key parameters of the ion source, namely energy dispersion and emittance. The usual methods for measuring these parameters are presented and the operation of the test bench is fully described. Then we then present the measurements made with beams of xenon ions and oxygen ions. Some parameters of the plasma ion source have thus been obtained
Kapser, Stefan [Verfasser], Rudolf [Akademischer Betreuer] Neu, Rudolf [Gutachter] Neu und Johannes [Gutachter] Barth. „Deuterium Permeation Through Tungsten Driven by Plasma-Based Low-Energy Ion Implantation / Stefan Kapser ; Gutachter: Rudolf Neu, Johannes Barth ; Betreuer: Rudolf Neu“. München : Universitätsbibliothek der TU München, 2018. http://d-nb.info/1176107046/34.
Der volle Inhalt der QuelleLiao, Jiunn-Der. „Modifications physico-chimiques et mécaniques du polyéthylène et du polypropylène par implantation ionique, plasma micro-ondes,bombardement d'électrons et irradiation gamma“. Grenoble INPG, 1995. http://www.theses.fr/1995INPG4202.
Der volle Inhalt der QuelleBasso, Rodrigo Leonardo de Oliveira. „Efeito do carbono no processo de nitrocarburização com plasma pulsado da liga metálica AISI H13“. [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277746.
Der volle Inhalt der QuelleTese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
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Resumo: Este trabalho apresenta um estudo sobre os efeitos da incorporação de carbono e nitrogênio na formação de uma camada monofásica, compacta e homogênea, composta por carbonitretos do tipo e -Fe2-3(C,N), na superfície da liga metálica AISI H13. Também são apresentados estudos sobre os efeitos da incorporação desses elementos nas propriedades mecânicas, químicas e na microestrutura da superfície da liga metálica. A incorporação desses elementos na superfície do material foi feita utilizando-se o tratamento termoquímico de nitrocarburização por plasma pulsado em atmosferas contendo N2+ H2+ CH4 em diferentes proporções. Além da composição da atmosfera de tratamento, também foram variadas a temperatura e o tempo de tratamento. De maneira a complementar o estudo do comportamento da liga metálica frente ao tratamento termoquímico a plasma, também foram preparadas amostras com atmosferas oxidantes contendo CO2. A análise da composição química da superfície das amostras foi feita através de espectroscopia de fotoelétrons e mostra que a incorporação de nitrogênio sofre grande influência da quantidade de gás contendo carbono, presente no plasma. Porém a incorporação desses elementos não é diretamente proporcional à concentração do gás contendo esse elemento. Ao contrário do esperado, aumentando-se suficientemente a concentração desses elementos na atmosfera de tratamento, não acarreta em aumento na concentração dos mesmos no material. Por outro lado a análise através de difração de raios X revelou a formação de estruturas cristalinas consistentes com o diagrama de fases do sistema Fe-C-N. Para menores concentrações de compostos de carbono no plasma, a formação de nitretos e carbonitretos é predominante enquanto que maiores quantidades desse elemento levam ao surgimento da fase cementita e -Fe3 C, indesejável por possuir baixa resistência mecânica. As propriedades mecânicas da superfície foram estudadas através de medidas de nano e micro-dureza e seus resultados indicam que, como esperado, amostras com maior quantidade de nitrogênio incorporada possuim maior dureza da superfície. Esse comportamento é condizente com a microestrutura observada por microscopia eletrônica de varredura que mostra o entrelaçamento dos grãos da estrutura do aço e o preenchimento de seus contornos com carbonitretos de ferro que dificultam a movimentação dos planos cristalinos do cristal aumentando sua dureza. Foi verificado que as concentrações de carbono e de nitrogênio contido no material exercem grande influência sobre a reatividade da superfície das amostras frente a processos corrosivos em meios contendo íons cloreto. Esse comportamento foi verificado através de medidas de corrosão em solução aquosa de NaCl a 0,9 vol.%. Novamente os resultados apontam que maior concentração de nitrogênio é responsável por conferir a superfície maior proteção contra corrosão. Esses resultados são atribuídos a presença de uma mono-fase compacta formada pela fase e - Fe2-3 (C,N) na superfície das amostras. Resultados menos significativos foram obtidos quando a superfície continha uma mistura de fases contendo g -Fe4 N, e -Fe2-3 N, a -Fe e CrN
Abstract: This work presents a study on the effect of the incorporation of carbon and nitrogen on he formation of a singlephase homogeneous layer, composed by e -Fe2-3(C,N) carbonitrides, on the top surface of a AISI H13 tool steel. We also present studies on the effect of the incorporation of these elements (C and N) in the microstructure and in the mechanical and chemical properties of the surface of the metallic alloy. The incorporation of these elements in the surface of the material was made using the plasma nitrocarburizing termochemical treatment in atmospheres containing N2 + H2+CH4 in different ratios. Beyond the composition of the treatment atmosphere, the temperature and the time of treatment had been also varied. In way to complement the study of the behavior of the metallic alloy we had been also prepared samples with oxidating atmospheres containing CO2. The chemical composition analysis of the sample¿s surface was made through X-ray photo-electron spectroscopy and pointed that nitrogen incorporation suffers great influence from the amount of gas containing carbon, on the plasma atmosphere. However the incorporation of these elements is not directly proportional to the concentration of the gas containing this element. In con-trast, increasing enough the concentration of these elements in the treatment atmosphere, it does not cause increase in the concentration of the same element in the material¿s surface. On the other hand the X-ray diffraction analysis showed the formation of crystalline structures, consistent with the phase diagram of Fe-C-N system. For lesser carbon concentrations in the plasma, the formation of nitrides and carbides are predominant whereas bigger amounts of this element lead to the formarion of the cementite phase (q -Fe3 C , undesirable for possessing low resistance mechanics). The mechanical properties of the surface had been studied by means of nano and microhardness and its results indicate that, as expected, samples with bigger amount of incorporated nitrogen possesses bigger hardness in its surface. This behavior is in agreement with the observed microstructure observed by scanning electron microscopy that show the interlacement of the grains of the steel structure and the fulfilling of its boundaries with iron carbonitrides that make it difficult the movement of the crystalline plans of the lattice increasing its hardness. It was verified that the nitrogen and carbon concentrations in the material¿s surface, are of great influence on the reactivity of the surface regarding to corrosive processes in clorine solutions. This behavior was verified by measurements of corrosion in NaCl aqueous solution. Again the results pointed that bigger nitrogen concentration is responsible for protecting the surface against corrosion process. These results are attributed to the presence of a compact and homogeneous e -Fe2-3(C,N) surface layer on the surface of the samples. Less significant results had been gotten when the surface contained a mixture of phases containing g -F e4N, e -Fe2-3 N, a -Fe e CrN
Doutorado
Física da Matéria Condensada
Doutor em Ciências