Auswahl der wissenschaftlichen Literatur zum Thema „Pe(ald)“
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Zeitschriftenartikel zum Thema "Pe(ald)"
Onaya, Takashi, und Koji Kita. „(Invited) Role of Oxidant Gas for Atomic Layer Deposition of HfxZr1−XO2 Thin Films on Ferroelectricity of Metal-Ferroelectric-Metal Capacitors“. ECS Transactions 113, Nr. 2 (17.05.2024): 51–59. http://dx.doi.org/10.1149/11302.0051ecst.
Der volle Inhalt der QuelleHaeberle, Jörg, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida und Dieter Schmeißer. „Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films“. Beilstein Journal of Nanotechnology 4 (08.11.2013): 732–42. http://dx.doi.org/10.3762/bjnano.4.83.
Der volle Inhalt der QuelleVan Daele, Michiel, Christophe Detavernier und Jolien Dendooven. „Surface species during ALD of platinum observed with in situ reflection IR spectroscopy“. Physical Chemistry Chemical Physics 20, Nr. 39 (2018): 25343–56. http://dx.doi.org/10.1039/c8cp03585g.
Der volle Inhalt der QuelleMione, M. A., V. Vandalon, W. M. M. Kessels und F. Roozeboom. „Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy“. Journal of Vacuum Science & Technology A 40, Nr. 6 (Dezember 2022): 062407. http://dx.doi.org/10.1116/6.0002158.
Der volle Inhalt der QuelleDo Nascimento, Cleonilde Maria, Alex José de Melo Silva, Jéssica Paula Lucena, Juliana Ellen de Melo Gama, Cícero Jádson Da Costa, Elane Beatriz de Jesus Oliveira, Danielle Maria Nascimento Moura, Helotonio Carvalho und Sheilla Andrade De Oliveira. „Epidemiological profile of the main prevalent liver diseases in Brazil Northeast and possible impacts associated with the COVID-19 pandemic“. Cuadernos de Educación y Desarrollo 15, Nr. 12 (21.12.2023): 16916–41. http://dx.doi.org/10.55905/cuadv15n12-096.
Der volle Inhalt der QuelleRoy, Amit K., Jolien Dendooven, Davy Deduytsche, Kilian Devloo-Casier, Kim Ragaert, Ludwig Cardon und Christophe Detavernier. „Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene“. Chemical Communications 51, Nr. 17 (2015): 3556–58. http://dx.doi.org/10.1039/c4cc09474c.
Der volle Inhalt der QuelleGebhard, M., F. Mitschker, M. Wiesing, I. Giner, B. Torun, T. de los Arcos, P. Awakowicz, G. Grundmeier und A. Devi. „An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor“. Journal of Materials Chemistry C 4, Nr. 5 (2016): 1057–65. http://dx.doi.org/10.1039/c5tc03385c.
Der volle Inhalt der QuelleKarbalaei Akbari, Mohammad, Nasrin Siraj Lopa und Serge Zhuiykov. „Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions“. Coatings 13, Nr. 6 (03.06.2023): 1041. http://dx.doi.org/10.3390/coatings13061041.
Der volle Inhalt der QuelleDobbelaere, Thomas, Felix Mattelaer, Amit Kumar Roy, Philippe Vereecken und Christophe Detavernier. „Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries“. Journal of Materials Chemistry A 5, Nr. 1 (2017): 330–38. http://dx.doi.org/10.1039/c6ta04179e.
Der volle Inhalt der QuellePark, Yongju, Woonyoung Lee, Yongkook Choi, Hyunkyu Lee und Jinseong Park. „Characteristics of Tin Oxide Thin Films Deposited by PE-ALD“. Korean Journal of Materials Research 14, Nr. 12 (01.12.2004): 840–45. http://dx.doi.org/10.3740/mrsk.2004.14.12.840.
Der volle Inhalt der QuelleDissertationen zum Thema "Pe(ald)"
Jaffal, Moustapha. „Développement de Dépôt Sélectif Topographique 3D par combinaison de procédés PE(ALD) et ALE en microélectronique“. Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT046.
Der volle Inhalt der QuelleOver the past decades, the semiconductor industry has witnessed a remarkable increase in the performance of integrated circuits. Photolithography, a crucial process in the manufacturing of integrated circuits, requires an increasingly complex sequence of steps, including various successive treatments such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP). Beyond their complexity and the associated cost escalation, patterning steps can result in alignment errors, known as Edge Placement Error (EPE), which can impact the proper functioning of devices such as transistors. The objective of this thesis is to develop a novel topographical selective deposition (TSD) process using a "Deposition/Etching" super-cycle approach. The advantages of this TSD process include the lateral and direct formation of spacers on the sidewalls of 3D architectures, such as CMOS transistor gates at the nanoscale. This innovative manufacturing approach paves the way for reducing the number of steps and equipment required in the fabrication process, minimizing the potential EPE introduced by photolithography. Consequently, it offers the opportunity to reduce the consumption of horizontal surfaces in 3D transistors, a critical factor in the integration of advanced technological nodes during spacer creation. This work offers a proof of concept of the TSD deposition, using a super-cycle approach that alternates between a conformal deposition process by PE(ALD) and various anisotropic plasma etching processes in the same tool. This approach leverages the physical and chemical properties of plasma interactions with materials
ZHANG, XIAO-YING, und 張小英. „Characteristic Analysis of HfO2 Thin Films Deposited by PE-ALD and its Application in Solar Cells“. Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x9kgj2.
Der volle Inhalt der Quelle大葉大學
電機工程學系
105
HfO2 thin films were grown by plasma enhanced atomic layer deposited (PE-ALD) and their deposition condition is optimized. Changing different pretreatment silicon substrates and annealing temperatures improved the passivation properties of HfO2 thin films on silicon. HfO2 thin films used in high-efficiency n-type Si solar cells were also investigated. The main works are summarized as follows: 1. The condition of HfO2 thin films deposited by PE-ALD was optimized. When the silicon substrate was pretreated by O2 plasma, the HfO2 thin films have the best passivation effect on silicon comparing to N2 plasma pretreatment and non-pretreatment. A mechanism of O2 plasma pretreatment silicon substrates improving passivation properties of HfO2 thin films on silicon was also present. 2. Post annealing in N2 ambient of HfO2 thin films were carried out to investigate their passivation effect on the silicon. The results showed that rapid thermal annealing at 500 ℃ for 10 min yielded a highest lifetime of 67 μs. The surface recombination velocity (SRV) is 187 cm/s. A mechanism of post annealing improving passivation properties of HfO2 thin films on silicon was also investigated. 3. The effect of different SRV on n-type silicon solar cells was simulated by PC1D. Simulation results showed that the efficiency could reach 20.5% while the front SRV is 22 cm/s and the rear SRV is 187 cm/s.
Konferenzberichte zum Thema "Pe(ald)"
Dallaev, Rashid. „Characterization Of Aln Nanolayers Deposited On A Surface Of Hopg By Pe-Ald“. In STUDENT EEICT 2021. Brno: Fakulta elektrotechniky a komunikacnich technologii VUT v Brne, 2021. http://dx.doi.org/10.13164/eeict.2021.193.
Der volle Inhalt der QuelleYan, Jingdong, Bosen Ma, Stephen Liou, Ce Qin und Amit Jain. „Tunable Step Coverage of In-Situ Pe-Ald in ETCH Chamber for Sidewall Protection During 3D Nand High Aspect-Ratio Etch“. In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461512.
Der volle Inhalt der QuelleZakirov, Evgeny R., Valeriy G. Kesler und Georgiy Yu Sidorov. „Studying C–V Characteristics of MIS Structures with PE-ALD Al2O3 on HgCdTe Oxidized in Remote RF-Plasma“. In 2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE). IEEE, 2023. http://dx.doi.org/10.1109/apeie59731.2023.10347577.
Der volle Inhalt der QuelleWu, Tian-Li, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere und Robin Roelofs. „Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs“. In 2015 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2015. http://dx.doi.org/10.1109/irps.2015.7112769.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Pe(ald)"
Alhasan, Ahmad, Brian Moon, Doug Steele, Hyung Lee und Abu Sufian. Chip Seal Quality Assurance Using Percent Embedment. Illinois Center for Transportation, Dezember 2023. http://dx.doi.org/10.36501/0197-9191/23-029.
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