Thematische Bibliographien / Ovonic Threshold Selector (OTS) / Zeitschriftenartikel
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Zeitschriftenartikel zum Thema „Ovonic Threshold Selector (OTS)“

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Veröffentlicht am 25. Mai 2024

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1

Zhang, Shiqing, Bing Song, Shujing Jia, Rongrong Cao, Sen Liu, Hui Xu und Qingjiang Li. „Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability“. Journal of Semiconductors 43, Nr. 10 (01.10.2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.

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Abstract Selector devices are indispensable components of large-scale memristor array systems. The thereinto, ovonic threshold switching (OTS) selector is one of the most suitable candidates for selector devices, owing to its high selectivity and scalability. However, OTS selectors suffer from poor endurance and stability which are persistent tricky problems for application. Here, we report on a multilayer OTS selector based on simple GeSe and doped-GeSe. The experimental results show improving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.5%. The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers. These developments pave the way towards tuning a new class of OTS materials engineering, ensuring improvement of electrical performance.
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2

Kim, Jaeyeon, Wansun Kim, Jusung Kim und Hyunchul Sohn. „Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device“. AIP Advances 13, Nr. 3 (01.03.2023): 035221. http://dx.doi.org/10.1063/5.0140715.

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Ovonic threshold switching (OTS) selector devices based on chalcogenide materials are promising candidates for addressing the sneak current in high-density cross-point array structures owing to their high selectivity, high endurance, and fast switching speed. However, the OTS mechanism remains controversial and needs to be clarified. In this study, the formation of local conductive filaments (CFs) during threshold switching in an amorphous Ga2Te3 OTS selector device was investigated by electrical measurements and conductive-atomic force microscopy (C-AFM). The amorphous Ga2Te3 OTS selector device requires a forming process before the threshold switching processes. In addition, the off-current density ( JOFF) was dependent on the area of the bottom electrode. The difference between the threshold voltage ( VTH) and the hold voltage ( VH) increased as the applied higher electric field increased. The drift of VTH ( VTH drift) depended on the relaxation time and measurement temperature. The requirements of the forming process, area dependence of the JOFF, the difference between the VTH− VH with the applied electric field, and VTH drift are expected to depend on locally formed CFs. In addition, the analysis of the C-AFM results strongly supports the formation of local CFs during threshold switching in an amorphous Ga2Te3 OTS selector device. The understanding of OTS behavior uncovered in this study may provide guidance for improving the characteristics of and designing materials for future applications of OTS selector devices.
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3

Wang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong und Xiangshui Miao. „Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors“. Applied Physics Letters 121, Nr. 19 (07.11.2022): 193501. http://dx.doi.org/10.1063/5.0127177.

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The endurance of ovonic threshold switching (OTS) selectors is a key element for memory application. However, multi-element system for OTS in recent studies will induce element or phase segregation and lead to device failure. Since pure Te based device characterizes relatively high off current, in this work, we studied a Te-rich Ge–Te based OTS selector. We first conducted a failure analysis on Ge–Te based OTS selector. Through first-principles calculations, we found that a relatively larger Ge concentration in the Ge–Te system may lead to a worse device endurance after continuous operation due to the migration of Ge atoms. Experiments further proved that device endurance can be improved more than two orders of magnitude through decreasing Ge concentration and the element segregation is greatly weakened by the composition close to elemental. Finally, a significantly improved endurance of 2 × 1010 was realized in Ge10Te90 based OTS selectors. In the meantime, the Ge10Te90 based OTS selectors show good switching performance and potential for use in memory applications.
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4

Wu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao und Zhitang Song. „Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability“. Nanomaterials 13, Nr. 6 (21.03.2023): 1114. http://dx.doi.org/10.3390/nano13061114.

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The selector is an indispensable section of the phase change memory (PCM) chip, where it not only suppresses the crosstalk, but also provides high on-current to melt the incorporated phase change material. In fact, the ovonic threshold switching (OTS) selector is utilized in 3D stacking PCM chips by virtue of its high scalability and driving capability. In this paper, the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the decrease in electrode diameter. Meanwhile, the on-current density (Jon) increases significantly as the device is scaling down, and 25 MA/cm2 on-current density is achieved in the 60-nm SiTe device. In addition, we also determine the state of the Si-Te OTS layer and preliminarily obtain the approximate band structure, from which we infer that the conduction mechanism conforms to the Poole-Frenkel (PF) model.
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5

Noé, Pierre, Anthonin Verdy, Francesco d’Acapito, Jean-Baptiste Dory, Mathieu Bernard, Gabriele Navarro, Jean-Baptiste Jager, Jérôme Gaudin und Jean-Yves Raty. „Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed“. Science Advances 6, Nr. 9 (Februar 2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.

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Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds. This model opens the way for design of improved OTS materials and for future types of applications such as brain-inspired computing.
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6

Seong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park und Min Kyu Yang. „Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure“. Materials 16, Nr. 5 (02.03.2023): 2066. http://dx.doi.org/10.3390/ma16052066.

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A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. The chalcogenide-based ovonic threshold switch (OTS) is a powerful selector with highly nonlinear I–V characteristics that can be used to address the sneak current problem. In this study, we evaluated the electrical characteristics of an OTS with a TiN/GeTe/TiN structure. This device shows nonlinear DC I–V characteristics, an excellent endurance of up to 109 in the burst read measurement, and a stable threshold voltage below 15 mV/dec. In addition, at temperatures below 300 °C, the device exhibits good thermal stability and retains an amorphous structure, which is a strong indication of the aforementioned electrical characteristics.
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7

Laguna, C., M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi und G. Navarro. „Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress“. Journal of Applied Physics 133, Nr. 7 (21.02.2023): 074501. http://dx.doi.org/10.1063/5.0134947.

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In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN ovonic threshold switching (OTS) material once integrated in selector devices featuring a top electrode based on a transparent and conductive indium tin oxide layer. The devices are characterized by standard electrical protocols, and the structural evolution of the material is investigated after several switching operations. The results are correlated with the spectra obtained from blanket samples annealed at increasing temperature and are supported by XRD and TEM analyses. We establish a link between the evolution of the material structure with the annealing process and the device behavior along cycling, bringing important advancement in the understanding of the switching mechanism and of the origin of the failure in OTS devices.
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Kim, Myoungsub, Youngjun Kim, Minkyu Lee, Seok Man Hong, Hyung Keun Kim, Sijung Yoo, Taehoon Kim, Seung-min Chung, Taeyoon Lee und Hyungjun Kim. „PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications“. Journal of Materials Chemistry C 9, Nr. 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.

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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems.
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9

Minguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse et al. „OxRAM + OTS optimization for binarized neural network hardware implementation“. Semiconductor Science and Technology 37, Nr. 1 (08.12.2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.

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Abstract Low-power memristive devices embedded on graphics or central processing units logic core are a very promising non-von-Neumann approach to improve significantly the speed and power consumption of deep learning accelerators, enhancing their deployment on embedded systems. Among various non-ideal emerging neuromorphic memory devices, synaptic weight hardware implementation using resistive random-access memories (RRAMs) within 1T1R architectures promises high performance on low precision binarized neural networks (BNN). Taking advantage of the RRAM capabilities and allowing to substantially improve the density thanks to the ovonic threshold selector (OTS) selector, this work proposes to replace the standard 1T1R architecture with a denser 1S1R crossbar system, where an HfO2-based resistive oxide memory (OxRAM) is co-integrated with a Ge-Se-Sb-N-based OTS. In this context, an extensive experimental study is performed to optimize the 1S1R stack and programming conditions for extended read window margin and endurance characteristics. Focusing on the standard machine learning MNIST image recognition task, we perform offline training simulations in order to define the constraints on the devices during the training process. A very promising bit error rate of ∼10−3 is demonstrated together with 1S1R 104 error-free programming endurance characteristics, fulfilling the requirements for the application of interest. Based on this simulation and experimental study, BNN figures of merit (system footprint, number of weight updates, accuracy, inference speed, electrical consumption per image classification and tolerance to errors) are optimized by engineering the number of learnable parameters of the system. Altogether, an inherent BNN resilience to 1S1R parasitic bit errors is demonstrated.
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10

Kweon, Jun Young, und Yun-Heup Song. „CMOS Based Ovonic Threshold Switching Emulation Circuitry“. Journal of Nanoscience and Nanotechnology 20, Nr. 8 (01.08.2020): 4977–79. http://dx.doi.org/10.1166/jnn.2020.17807.

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Ovonic Threshold Switch (OTS) device is most popular switching device in PRAM. There are many OTS device research; however, it is hard to make reasonable OTS device which uses a circuit simulation and real device. In this work, we studied the OTS device emulation circuit, which can follow OTS characteristic, especially snapback current using 0.18 μm CMOS technology. This circuitry composes snapback current generator, cut off switch and output driver. Snapback current generator can make the current level up to 300 μA.
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11

Yoo, Sijung, Chanyoung Yoo, Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee und Cheol Seong Hwang. „Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior“. Journal of Materials Chemistry C 6, Nr. 18 (2018): 5025–32. http://dx.doi.org/10.1039/c8tc01041b.

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12

Kim, Doo San, Ju Eun Kim, You Jung Gill, Jin Woo Park, Yun Jong Jang, Ye Eun Kim, Hyejin Choi, Oik Kwon und Geun Young Yeom. „Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories“. RSC Advances 10, Nr. 59 (2020): 36141–46. http://dx.doi.org/10.1039/d0ra05321j.

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Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching by hydrogen-based gases such as H2, CH4, NH3, CH4 + H2, and CH4 + NH3.
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13

An, Byung-Kwon, Seong-Beom Kim und Yun-Heub Song. „Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics“. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20, Nr. 1 (29.02.2020): 8–11. http://dx.doi.org/10.5573/jsts.2020.20.1.008.

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14

Lee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong und Min Kyu Yang. „Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices“. Materials 16, Nr. 12 (11.06.2023): 4315. http://dx.doi.org/10.3390/ma16124315.

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Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic devices are designed based on complementary metal-oxide-semiconductor circuits, and the subthreshold swing of existing metal-oxide semiconductor field effect transistors (MOSFETs) cannot be reduced below 60 mV/dec at room temperature owing to the thermionic carrier injection mechanism in the source region. Therefore, new devices must be developed to overcome these limitations. In this study, we present a novel threshold switch (TS) material, which can be applied to logic devices by employing ovonic threshold switch (OTS) materials, failure control of insulator–metal transition materials, and structural optimization. The proposed TS material is connected to a FET device to evaluate its performance. The results demonstrate that commercial transistors connected in series with GeSeTe-based OTS devices exhibit significantly lower subthreshold swing values, high on/off current ratios, and high durability of up to 108.
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15

Wang, Lun, Wang Cai, Da He, Qi Lin, Daixing Wan, Hao Tong und Xiangshui Miao. „Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping“. IEEE Electron Device Letters 42, Nr. 5 (Mai 2021): 688–91. http://dx.doi.org/10.1109/led.2021.3064857.

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16

Lee, Hyejin, Seong Won Cho, Seon Jeong Kim, Jaesang Lee, Keun Su Kim, Inho Kim, Jong-Keuk Park et al. „Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons“. Nano Letters 22, Nr. 2 (13.01.2022): 733–39. http://dx.doi.org/10.1021/acs.nanolett.1c04125.

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17

Gao, Tian, Jie Feng, Haili Ma, Xi Zhu und Zhixian Ma. „AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays“. Applied Physics Letters 114, Nr. 16 (22.04.2019): 163505. http://dx.doi.org/10.1063/1.5089818.

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18

Park, Jin Woo, Doo San Kim, Won Oh Lee, Ju Eun Kim, HyeJin Choi, OIk Kwon, SeungPil Chung und Geun Young Yeom. „Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas“. ECS Journal of Solid State Science and Technology 8, Nr. 6 (2019): P341—P345. http://dx.doi.org/10.1149/2.0051906jss.

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19

Kim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim und Geun Young Yeom. „Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices“. ECS Transactions 102, Nr. 2 (07.05.2021): 39–43. http://dx.doi.org/10.1149/10202.0039ecst.

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20

Kim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim und Geun Young Yeom. „Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices“. ECS Meeting Abstracts MA2021-01, Nr. 30 (30.05.2021): 1023. http://dx.doi.org/10.1149/ma2021-01301023mtgabs.

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21

Koo, Yunmo, Sangmin Lee, Seonggeon Park, Minkyu Yang und Hyunsang Hwang. „Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application“. IEEE Electron Device Letters 38, Nr. 5 (Mai 2017): 568–71. http://dx.doi.org/10.1109/led.2017.2685435.

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22

Chen, Ziqi, Hao Tong, Wang Cai, Lun Wang und Xiangshui Miao. „Modeling and Simulations of the Integrated Device of Phase Change Memory and Ovonic Threshold Switch Selector With a Confined Structure“. IEEE Transactions on Electron Devices 68, Nr. 4 (April 2021): 1616–21. http://dx.doi.org/10.1109/ted.2021.3059436.

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23

Kim, S. D., H. W. Ahn, S. y. Shin, D. S. Jeong, S. H. Son, H. Lee, B. k. Cheong, D. W. Shin und S. Lee. „Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices“. ECS Solid State Letters 2, Nr. 10 (18.07.2013): Q75—Q77. http://dx.doi.org/10.1149/2.001310ssl.

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24

Kwak, Myonghoon, Sangmin Lee, Seyoung Kim und Hyunsang Hwang. „Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-Based Fuse Device“. IEEE Electron Device Letters 41, Nr. 9 (September 2020): 1436–39. http://dx.doi.org/10.1109/led.2020.3008936.

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25

Seo, Juhee, Seong Won Cho, Hyung-Woo Ahn, Byung-ki Cheong und Suyoun Lee. „A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)“. Journal of Alloys and Compounds 691 (Januar 2017): 880–83. http://dx.doi.org/10.1016/j.jallcom.2016.08.237.

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26

Kashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak und Helena Silva. „(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5“. ECS Meeting Abstracts MA2022-01, Nr. 18 (07.07.2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.

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Phase change memory (PCM) is a high speed, high density non-volatile resistive memory technology that utilizes different phases (crystalline and amorphous) of phase change materials such as Ge2Sb2Te5 (GST) to store information [1]. Here, the material undergoes two types of reversible switching phenomena: (i) Ovonic Threshold Switching (OTS), which causes the amorphous phase of the material to switch from a highly resistive state to conductive state with application of high electric fields, resulting in current flow and (ii) Ovonic Memory Switching (OMS), which is due to the change of the phase of the material between amorphous and crystalline phases induced by heating [2]. Even though PCM entered high volume manufacturing, the electronic properties of the phase change materials are still not well understood [3,4]. In this work, we construct the energy band diagram of amorphous GST as a function of temperature using a temperature dependent model of effective activation energy of conduction in metastable amorphous GST [5], which we obtained from high-speed experiments on GST line-cells [6]. Assuming the bandgap energy to linearly decrease with temperature [7,8] and p-type conduction (based on positive Seebeck coefficients measured in a wide temperature range [9]) , we determine a temperature dependent Fermi energy level from 0K to melting temperature, Tmelt ~ 858 K. Liquid GST is expected to become metallic (bandgap collapsing to 0) at ~ 894K, based on the experimental results. We also estimate the carrier concentration at Tmelt utilizing the latent heat of fusion (126 kJ/kg) [10] to be pmelt = 1.47 x 1022 cm-3. Using the melt resistivity measured on GST thin film, we calculate the carrier mobility at melting point as µmelt ~0.187 cm2/V-s, close to the previously reported value of 0.15 cm2/V-s based on crystalline state mobility and a density of states calculation [2]. Assuming a weak temperature dependence of the mobility [5], we obtain the carrier concentration of ~3.37× 1017 cm-3 at room temperature which lies within the ~1017-1018 cm-3 range estimated in a former study [3]. Finally, we calculate conduction activation energy of as-deposited amorphous GST from temperature dependent Seebeck coefficient measured simultaneously with the resistance [9]. The activation energy varies as a parabolic function of temperature where it starts from 0 eV at 0 K, reaches a peak of ~0.257 eV near glass transition temperature (~400 K) with the room temperature value of ~0.24 eV and becomes 0 eV again at ~810 K. We also utilize the Seebeck coefficient measurements along with the band edges and Fermi energy level information from the energy band diagram to calculate the ratio of minority carrier concentration to the total carrier concentration as a function of temperature; this is useful to predict the temperature beyond which bipolar conduction becomes significant. Acknowledgment: Analysis is performed with the support of US National Science Foundation (NSF) award ECCS 1711626. The experimental data used for this analysis were collected with the support of US NSF DMR-1710468 on devices fabricated with the support of US Department of Energy Office of Basic Energy Sciences. References: [1] S. W. Fong et al., IEEE Trans. Electron Devices, vol. 64, no. 11, pp. 4374–4385, 2017. [2] A. Pirovano et al., IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 452–459, 2004. [3] T. Kato et al., Japanese J. Appl. Physics, vol. 44, no. 10, pp. 7340–7344, 2005. [4] M. Schumacher et al., Sci. Rep., vol. 6, no. June, pp. 1–11, 2016. [5] S. Muneer et al., AIP Adv., vol. 8, no. 6, p. 65314, Jun. 2018. [6] F. Dirisaglik et al., Nanoscale, vol. 7, no. 40, pp. 16625–16630, 2015. [7] E. M. Vinod et al., J. Non. Cryst. Solids, vol. 356, no. 41–42, pp. 2172–2174, 2010. [8] Y. Kim et al., Appl. Phys. Lett., vol. 90, no. 17, pp. 1–4, 2007. [9] L. Adnane et al., J. Appl. Phys., vol. 122, no. 12, 2017. [10] Z. Fan et al., Japanese J. Appl. Physics, vol. 42, no. 2 B, pp. 800–803, 2003.
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Zhao, Zihao, Sergiu Clima, Daniele Garbin, Robin Degraeve, Geoffrey Pourtois, Zhitang Song und Min Zhu. „Chalcogenide Ovonic Threshold Switching Selector“. Nano-Micro Letters 16, Nr. 1 (11.01.2024). http://dx.doi.org/10.1007/s40820-023-01289-x.

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AbstractToday’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.
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28

Qiao, Chong, Lanli Chen, Rongchuan Gu, Bin Liu, Shengzhao Wang, Songyou Wang, Cai Zhuang Wang, Kai-Ming Ho, Ming Xu und Xiangshui Miao. „Structure, bonding and electronic characteristics of amorphous Se“. Physical Chemistry Chemical Physics, 2024. http://dx.doi.org/10.1039/d4cp00078a.

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Ovonic threshold switching (OTS) selector can effectively improve the storage density and suppress the leakage current of advanced phase-change memory. As a prototypical OTS material, amorphous GeSe is widely investigated....
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Haider, Ali, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean Marc Girard, Gabriel Khalil El Hajjam, Gouri Kar et al. „Pulsed chemical vapour deposition of conformal GeSe for application as OTS selector“. Materials Advances, 2021. http://dx.doi.org/10.1039/d0ma01014f.

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Ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold...
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Clima, Sergiu, Daisuke Matsubayashi, Taras Ravsher, Daniele Garbin, Romain Delhougne, Gouri Sankar Kar und Geoffrey Pourtois. „In silico screening for As/Se-free ovonic threshold switching materials“. npj Computational Materials 9, Nr. 1 (03.06.2023). http://dx.doi.org/10.1038/s41524-023-01043-2.

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AbstractRestricted use of hazardous environmental chemicals is one important challenge that the semiconductor industry needs to face to improve its sustainability. Ovonic threshold switching (OTS) ternary compound materials used in memory selector devices contain As and Se. Engineering these elements out of these materials requires significant research effort. To facilitate this process, we performed systematic material screening for As/Se-free ternary materials, based on ab-initio simulations. To limit the large amount of possible chemical compositions to fewer promising candidates, we used physics-based material parameter filters like material stability, electronic properties, or change in polarizability. The OTS gauge concept is introduced as a computed parameter to estimate the probability of a material to show an OTS behavior. As a result, we identified 35 As/Se-free ternary alloy compositions for stand-alone OTS memory applications, as well as 12 compositions for RRAM selector applications. This work aims seeding the development of As/Se-free OTS materials.
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Zhao, Jiayi, Zihao Zhao, Zhitang Song und Min Zhu. „GeSe ovonic threshold switch: the impact of functional layer thickness and device size“. Scientific Reports 14, Nr. 1 (20.03.2024). http://dx.doi.org/10.1038/s41598-024-57029-7.

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AbstractThree-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively resolves the leakage current issue in the crossbar array. The OTS materials are chalcogenide glasses consisting of chalcogens such as Te, Se and S as central elements, represented by GeTe6, GeSe and GeS. Among them, GeSe-based OTS materials are widely utilized in commercial 3D PCM, their scalability, however, has not been thoroughly investigated. Here, we explore the miniaturization of GeSe OTS selector, including functional layer thickness scalability and device size scalability. The threshold switching voltage of the GeSe OTS device almost lineally decreases with the thinning of the thickness, whereas it hardly changes with the device size. This indicates that the threshold switching behavior is triggered by the electric field, and the threshold switching field of the GeSe OTS selector is approximately 105 V/μm, regardless of the change in film thickness or device size. Systematically analyzing the threshold switching field of Ge–S and Ge–Te OTSs, we find that the threshold switching field of the OTS device is larger than 75 V/μm, significantly higher than PCM devices (8.1–56 V/μm), such as traditional Ge2Sb2Te5, Ag–In–Sb–Te, etc. Moreover, the required electric field is highly correlated with the optical bandgap. Our findings not only serve to optimize GeSe-based OTS device, but also may pave the approach for exploring OTS materials in chalcogenide alloys.
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Lee, Jangseop, Sanghyun Ban, Yoori Seo, Dongmin Kim und Hyunsang Hwang. „Excellent Reliability Characteristics of Ovonic Threshold Switch Device with High Temperature Forming Technique“. physica status solidi (RRL) – Rapid Research Letters, 30.11.2023. http://dx.doi.org/10.1002/pssr.202300412.

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Amorphous chalcogenide‐based ovonic threshold switch (OTS) has significant potential as a selector device in high‐density memory arrays. However, to realize the ideal selector device, OTS still needs to enhance its reliability characteristics such as device uniformity and threshold voltage (Vth) drift. Herein, we investigated the effect of elevated temperature forming on the selector characteristics of an OTS device. Our findings indicate that the reliability performance of the device significantly improved when the forming process was conducted at high temperature. In particular, it showed excellent Vth uniformity (σ = 32 mV) and a notable enhancement in the Vth drift characteristics. Based on trap analysis at cryogenic temperature (77 K), it was confirmed that improved reliability characteristics can be attributed to the stability of the activated trap formed by high temperature forming process.This article is protected by copyright. All rights reserved.
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Wang, Lun, Zixuan Liu, Jiangxi Chen, Zhuoran Zhang, Jinyu Wen, Ruizhe Zhao, Hao Tong und Xiangshui Miao. „Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector“. Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc00448a.

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Ovonic threshold switching (OTS) selector is indispensable for large-scale three-dimension phase change memory (3D PCM) memory. To meet with the requirement of compatibility with the back-end of line (BEOL) process...
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Gu, Rongchuan, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao, Cai Zhuang Wang, Kai Ming Ho, Songyou Wang, Ming Xu und Xiangshui Miao. „Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials“. Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc02984k.

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The ovonic threshold switching (OTS) selector is crucial for the development of high-density memory devices based on three-dimensional semiconductor integration technology, as it could suppress leakage current. However, the performance...
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Yuan, Zhenhui, Xiaodan Li, Sannian Song, Zhitang Song, Jiawei Zha, Gang Han, Bingjun Yang, Takehito Jimbo und Koukou Suu. „The enhanced performance of a Si–As–Se ovonic threshold switching selector“. Journal of Materials Chemistry C, 2021. http://dx.doi.org/10.1039/d1tc02730a.

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36

Zhang, Shiqing, Hui Xu, Zhiwei Li, Sen Liu, Bing Song und Qingjiang Li. „A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect“. Frontiers in Neuroscience 15 (09.02.2021). http://dx.doi.org/10.3389/fnins.2021.635264.

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Ovonic threshold switch (OTS) has received great attention in neuromorphic computing due to its support for high-density synapse array as a selector and leaky-integration-firing functions Hodgkin-Huxley neurons. However, there is no simple and complete model for device simulation and integrated circuit design, which hindered application until now. In this work, we developed a compact physical model of OTS based on the Poole-Frenkel effect accompanied by the thermal dissipation effect for the first time. The thermal dissipation effect describes the energy flow between the device and the environment so that the model is more practical. Compared with previous experiments, the numerical results fairly fitted the electrical characteristics, demonstrating the model validity. In addition, the relation of the device performance with material and structure was deduced, which can facilitate optimizing the OTS device. The model will be useful for device design and implemented with high speed for simplicity.
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Seo, Yoori, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han und Hyunsang Hwang. „Improving the selector characteristics of ovonic threshold switch via UV treatment process“. Applied Physics Letters 123, Nr. 24 (11.12.2023). http://dx.doi.org/10.1063/5.0174074.

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In this study, we investigated the influence of ultraviolet (UV) treatment on the ovonic threshold switch (OTS) to improve its selector properties. Our findings demonstrate that iteratively applying UV treatment during the film deposition phase considerably improves device characteristics compared to a single UV treatment. Consequently, this process provided a significant decrease in the forming voltage, maintaining outstanding switching features, with an off-state current of approximately 2 nA. Furthermore, the refined UV treatment process resulted in an impressive 45% improvement in threshold voltage drift characteristics and facilitated excellent switching uniformity. X-ray photoelectron spectroscopy analysis revealed alterations in the bonding structure of the Si–Te–As–Ge film after UV exposure. Specifically, a transition was observed from unstable homopolar bonds, such as As-As or Te–Te, to their more stable heteropolar equivalents, such as As–Te. These results highlight the potential of UV treatment as an effective method for enhancing the OTS performance.
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Karpov, Ilya V., David Kencke, Derchang Kau, Stephen Tang und Gianpalo Spadini. „Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties“. MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g14-01-h07-01.

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AbstractWe present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.
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Yap, Suk-Min, I.-Ting Wang, Ming-Hung Wu und Tuo-Hung Hou. „Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory“. Frontiers in Neuroscience 16 (13.04.2022). http://dx.doi.org/10.3389/fnins.2022.868671.

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In this study, we constructed a voltage–time transformation model (V–t Model) to predict and simulate the spiking behavior of threshold-switching selector-based neurons (TS neurons). The V–t Model combines the physical nucleation theory and the resistor–capacitor (RC) equivalent circuit and successfully depicts the history-dependent threshold voltage of TS selectors, which has not yet been modeled in TS neurons. Moreover, based on our model, we analyzed the currently reported TS devices, including ovonic threshold switching (OTS), insulator-metal transition, and silver- (Ag-) based selectors, and compared the behaviors of the predicted neurons. The results suggest that the OTS neuron is the most promising and potentially achieves the highest spike frequency of GHz and the lowest operating voltage and area overhead. The proposed V–t Model provides an engineering pathway toward the future development of TS neurons for neuromorphic computing applications.
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40

Wu, Renjie, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiangshui Miao et al. „The role of arsenic in the operation of sulfur-based electrical threshold switches“. Nature Communications 14, Nr. 1 (29.09.2023). http://dx.doi.org/10.1038/s41467-023-41643-6.

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AbstractArsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of As into GeS brings >100 °C increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, which reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a back-end-of-line-compatible OTS selector with >12 MA/cm2 on-current, ~10 ns speed, and a lifetime approaching 1010 cycles after 450 °C annealing. These findings allow the precise performance control of GeSAs-based OTS materials for high-density 3D PCM applications.
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Thesberg, M., Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang et al. „Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device“. Solid-State Electronics, Oktober 2022, 108504. http://dx.doi.org/10.1016/j.sse.2022.108504.

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42

Antonelli, Renzo, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout et al. „Programming operations analysis and statistics in 1S1R OTS+PCM Double‐Patterned Self‐Aligned structure“. physica status solidi (RRL) – Rapid Research Letters, 06.02.2024. http://dx.doi.org/10.1002/pssr.202300429.

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This study explores the reliability of a Phase‐Change Memory (PCM) co‐integrated with an Ovonic Threshold Switching (OTS) selector (1S1R structure) based on an innovative Double‐Patterned Self‐Aligned (DPSA) architecture. The variability of the threshold voltage (Vth) for both the SET and RESET states is examined, comparing different distribution models to validate the use of mean and standard deviation as viable metrics. The dispersion of Vth is tracked under different programming conditions to provide insight into the evolution of device behavior over SET/RESET, endurance cycles and read cycles. The PCM device is based on a “Wall” structure and on Ge2Sb2Te5 alloy, while the OTS is based on a GeSbSeN alloy. Our analysis focuses on the programming characteristics and SET pulse optimization, studying current control and pulse fall times. The results are based on statistical data obtained from a kb‐sized memory array. A memory window of over 2 V is achieved. Our research helps understanding the DPSA architecture, and PCM+OTS in general, offering insights into their programming, variability, and reliability targeting Crossbar applications.This article is protected by copyright. All rights reserved.
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Hu, Zeyu, Weidong Zhang, Robin Degraeve, Daniele Garbin, Zheng Chai, Nishant Saxena, Pedro Freitas et al. „New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors“. IEEE Transactions on Electron Devices, 2022, 1–7. http://dx.doi.org/10.1109/ted.2022.3231233.

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44

Saito, Kentaro, Shogo Hatayama und Yuta Saito. „Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding“. physica status solidi (RRL) – Rapid Research Letters, 23.02.2024. http://dx.doi.org/10.1002/pssr.202300474.

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A critical element within the 3D Xpoint architecture is the Ovonic threshold switch (OTS) material, which serves a crucial role as a selector. The development of novel OTS materials devoid of hazardous elements such as As and Se is imperative for mitigating environmental impact. The Si‐Te binary telluride is a representative As/Se‐free OTS material, demonstrating stable switching. However, its thermal stability is insufficient for enduring annealing processes in semiconductor manufacturing. To address this challenge, this study proposes the incorporation of Mn into the Si‐Te alloy. While the introduction of transition metals into chalcogenide glass typically reduces the electrical resistivity, potentially compromising the ON/OFF ratio, the off current for the device containing 26 at.% Mn is observed to be lower than that for the undoped Si‐Te device. Furthermore, the thermal stability of the Mn‐Si‐Te film surpasses that of its pristine counterpart. X‐ray photoelectron spectroscopy and density functional theory simulations provide evidence of Mn‐Te bonding formation in the Mn‐Si‐Te amorphous alloy, thus suggesting the role of Mn‐Te bonding in enhancing thermal stability. These findings provide a promising avenue for the advancement of novel OTS materials.This article is protected by copyright. All rights reserved.
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Li, Xiao-Dong, Maoan Tian, Bai-Qian Wang, Nian-Ke Chen und Xian-Bin Li. „Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications“. Journal of Applied Physics 134, Nr. 20 (28.11.2023). http://dx.doi.org/10.1063/5.0168408.

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Ovonic threshold switching (OTS) selectors play a critical role in suppressing the sneak-path current of three-dimensional crossbar integration circuits. Compared to conventional nonmetal-telluride OTS selectors, selectors based on AlxTey glass are found to have both satisfactory on-state current and selectivity. However, it is unclear why the Al-rich AlxTey glass-based OTS selectors have robust insulation properties for reducing the off-state current. This work reveals the structure–property correlations of amorphous AlxTey at the atomic scale by first-principles calculations. It is found that the stoichiometric Al2Te3 glass tends to have a clean bandgap owing to the covalent and dative bonds formed by non-equivalent sp3-hybridized Al orbitals and the lone-pair electrons of Te. Unexpectedly, for Al-rich AlxTey glass (Al2.21Te2.79), the Al–Al bonds formed by redundant Al-atoms have an integrated crystal orbital bond index (ICOBI) of 0.8–0.9, which is much larger than that of Al–Al bonds in pure metals (0.227), indicating they are covalent. It is the covalent Al–Al bonds that ensure the robust insulation characteristics of Al-rich AlxTey glass, while the Te–Te interaction in the Al-poor AlxTey glass (Al1.79Te3.21) produces midgap states, thereby reducing the insulativity. The presented atomic and electronic pictures here will provide useful theoretical insights for designing OTS selectors with improved performances.
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Lee, Jaesang, Seong Won Cho, Young Woong Lee, Joon Young Kwak, Jaewook Kim Kim, YeonJoo Jeong, Gyu Weon Hwang, Seongsik Park, SangBum Kim und Suyoun Lee. „Rational engineering of a switching material for the Ovonic threshold switching (OTS) device with mitigated electroforming“. Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc03044f.

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The Ovonic threshold switch (OTS) has recently attracted renewed interest for its application in neuromorphic computing devices. One of the remaining problems is the electroforming (EF) process, which requires a...
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Jia, Shujing, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv et al. „Ultrahigh drive current and large selectivity in GeS selector“. Nature Communications 11, Nr. 1 (15.09.2020). http://dx.doi.org/10.1038/s41467-020-18382-z.

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Abstract Selector devices are indispensable components of large-scale nonvolatile memory and neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. However, current ovonic threshold switching devices rely heavily on intricate control of material stoichiometry and generally suffer from toxic and complex dopants. Here, we report on a selector with a large drive current density of 34 MA cm−2 and a ~106 high nonlinearity, realized in an environment-friendly and earth-abundant sulfide binary semiconductor, GeS. Both experiments and first-principles calculations reveal Ge pyramid-dominated network and high density of near-valence band trap states in amorphous GeS. The high-drive current capacity is associated with the strong Ge-S covalency and the high nonlinearity could arise from the synergy of the mid-gap traps assisted electronic transition and local Ge-Ge chain growth as well as locally enhanced bond alignment under high electric field.
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Chai, Zheng, Weidong Zhang, Sergiu Clima, Firas Hatem, Robin Degraeve, Qihui Diao, Jian Fu Zhang et al. „Cycling induced metastable degradation in GeSe Ovonic threshold switching selector“. IEEE Electron Device Letters, 2021, 1. http://dx.doi.org/10.1109/led.2021.3109582.

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49

Song, Bing, Hui Xu, Sen Liu, Haijun Liu, Qi Liu und Qingjiang Li. „An ovonic threshold switching selector based on Se-rich GeSe chalcogenide“. Applied Physics A 125, Nr. 11 (24.10.2019). http://dx.doi.org/10.1007/s00339-019-3073-z.

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50

Gao, Tian, Jie Feng, Haili Ma und Xi Zhu. „The ovonic threshold switching characteristics in SixTe1−x based selector devices“. Applied Physics A 124, Nr. 11 (06.10.2018). http://dx.doi.org/10.1007/s00339-018-2153-9.

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