Einloggen

Thematische Bibliographien / Optoelectronic properties of nanoparticles / Dissertationen

Um die anderen Arten von Veröffentlichungen zu diesem Thema anzuzeigen, folgen Sie diesem Link: Optoelectronic properties of nanoparticles.

Dissertationen zum Thema „Optoelectronic properties of nanoparticles“

Autor: Grafiati

Veröffentlicht am 18. Mai 2024

Zuletzt aktualisiert am 31. Juli 2025

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an

Wählen Sie eine Art der Quelle aus:

Machen Sie sich mit Top-50 Dissertationen für die Forschung zum Thema "Optoelectronic properties of nanoparticles" bekannt.

Neben jedem Werk im Literaturverzeichnis ist die Option "Zur Bibliographie hinzufügen" verfügbar. Nutzen Sie sie, wird Ihre bibliographische Angabe des gewählten Werkes nach der nötigen Zitierweise (APA, MLA, Harvard, Chicago, Vancouver usw.) automatisch gestaltet.

Sie können auch den vollen Text der wissenschaftlichen Publikation im PDF-Format herunterladen und eine Online-Annotation der Arbeit lesen, wenn die relevanten Parameter in den Metadaten verfügbar sind.

Sehen Sie die Dissertationen für verschiedene Spezialgebieten durch und erstellen Sie Ihre Bibliographie auf korrekte Weise.

1

Landes, Christy. "The dependence of the opto-electronic properties of CdSe nanoparticles on surface properties." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/30657.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Sinha, Banita. "Physicochemical and theoretical investigations on the synthesis characterization and optoelectronic properties of nanoparticles." Thesis, University of North Bengal, 2016. http://ir.nbu.ac.in/handle/123456789/2625.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

García, Castelló Núria. "Atomistic study of structural and electronic transport properties of silicon quantum dots for optoelectronic applications." Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/145640.

Der volle Inhalt der Quelle

Annotation:

Introduction It is undisputed that the silicon became the material most widely used in electronics in recent decades[1,2]. The qualities of silicon are well known, from its abundance and low cost to its ability to easily combine with oxides, so that the material has become essential in integrated electronic circuits and CMOS technology. A step further, though, is the idea of integrating electronics and photonics on the same silicon-based technology[3]. However, new strategies are needed to overcome the two principal obstacles of a possible bulk Si photonics: the indirect band gap and the band

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Taha, Hatem. "Optoelectronic and mechanical properties of Sol-Gel derived Multi-Layer ITO thin films improved by elemental doping, Carbon Nanotubes and Nanoparticles." Thesis, Taha, Hatem (2018) Optoelectronic and mechanical properties of Sol-Gel derived Multi-Layer ITO thin films improved by elemental doping, Carbon Nanotubes and Nanoparticles. PhD thesis, Murdoch University, 2018. https://researchrepository.murdoch.edu.au/id/eprint/41359/.

Der volle Inhalt der Quelle

Annotation:

Transparent conductors (TCs) are an essential ingredient in numerous new applications which are emerging in the 21st century including high efficiency solar cells, rigid and tactile displays, light emitting diodes, photonics for communications and computing, energy efficient and smart windows and gas sensors, since they allow efficient light transmission while electric signals are applied or collected. So far, indium tin oxide (ITO) reflects the best trade-off between low electrical resistivity and high optical transparency, making it the first candidate as transparent conductor for most optoe

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Aghili, Yajadda Mir Massoud. "An investigation on the electrical and optical properties of thin films of gold nanoislands." Thesis, The University of Sydney, 2013. http://hdl.handle.net/2123/18963.

Der volle Inhalt der Quelle

Annotation:

In this thesis the electrical conduction mechanism and some of the optical properties of thin films (TFs) of gold nanoislands (GNIs) are studied to utilize them for applications in nanoelectronics, sensors, solar cells, and plasmonics. In a regular array of GNIs where NIs have an identical size and tunnel gap, the tunnel current can be calculated by using a relatively simple formula (provided in chapter one). In discontinuous GTFs, there are distributions of GNI sizes and tunnel gaps. Therefore, calculating the tunnel current in such systems at low and high applied voltages over a wide tempera

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Ginger, David Stanton. "Optoelectronic properties of CdSe nanocrystals." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621187.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Beliatis, Michail. "Laser fabrication of plasmonic metal nanoparticles for optoelectronic devices." Thesis, University of Surrey, 2011. http://epubs.surrey.ac.uk/761383/.

Der volle Inhalt der Quelle

Annotation:

Metal nanoparticles (MNP) are widely researched for the fabrication of novel low cost and more energy efficient optoelectronic devices. MNPs, which exhibit surface plasmon resonance (SPR), can be incorporated into thin film photovoltaic structures and as well as into substrates for enhancing the Raman spectroscopy performance. Recent demonstration of devices with plasmonic structures has limited utility due to the need for techniques of ordered MNPs for large area fabrication that are not currently available. This work examines the suitability of laser annealing for the fabrication of metal na

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Figueiredo, José Maria Longras. "Optoelectronic properties of resonant tunnelling diodes." Doctoral thesis, Universidade do Porto. Reitoria, 2000. http://hdl.handle.net/10216/14347.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Casey, Abby. "Optoelectronic properties of new conjugated materials." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/46164.

Der volle Inhalt der Quelle

Annotation:

Next-generation electronic devices which are cheap, lightweight and flexible could be realised through the use of solution processable organic polymer and small molecule semiconductors. Unlike inorganic semiconductors such as silicon, soluble organic semiconductors could be processed using traditional high through-put printing techniques such as roll-to-roll processing and ink-jet printing, which would dramatically reduce manufacturing costs. Whilst organic semiconductors are not expected to be as high performance as inorganic semiconductors, improvements in performance are still required befo

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Figueiredo, José Maria Longras. "Optoelectronic properties of resonant tunnelling diodes." Tese, Universidade do Porto. Reitoria, 2000. http://hdl.handle.net/10216/14347.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

11

Jalili, Yousef Seyed. "Optoelectronic properties of GaAs-based dilute nitrides." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.408757.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

12

Jefferson, Paul Harvey. "Optoelectronic properties of highly mismatched semiconductor materials." Thesis, University of Warwick, 2009. http://wrap.warwick.ac.uk/2228/.

Der volle Inhalt der Quelle

Annotation:

Dilute nitride alloys of III–V semiconductors, and transparent conducting group-II oxides may both be categorised as highly mismatched compounds. The small size and high values of electronegativity of nitrogen and oxygen (see figure), compared to the substituted anion, in dilute nitrides, and the cation, in transparent conducting oxides, give rise to striking properties in these materials. The dilute nitride alloys GaNSb, InNSb, and GaInNSb, grown by molecular beam epitaxy, have been studied. Infrared absorption measurements of GaNSb are presented, showing the divergence of transitions from th

APA, Harvard, Vancouver, ISO und andere Zitierweisen

13

Flannery, Lorraine Barbara. "Electrical and optoelectronic properties of gallium nitride." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268478.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

14

Zanato, Daniele. "Optoelectronic properties of Group III-N semiconductors." Thesis, University of Essex, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.415640.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

15

Octon, T. "Optoelectronic properties of two-dimensional molybdenum ditelluride." Thesis, University of Exeter, 2019. http://hdl.handle.net/10871/35713.

Der volle Inhalt der Quelle

Annotation:

In this thesis the layered, two-dimensional material MoTe2 is examined experimentally for its optoelectronic properties, using a field effect transistor device configuration. MoTe2 experiences a strong light matter interaction, which is highly dependent on the conditions of the measurement, and the wavelength of light used. Light is able to: produce a photocurrent in MoTe2, desorb adsorbates from the surface, and even controllably thin by a single layer at a time. A theoretical study on MoTe2 also provides insights on the source of some of these interesting light matter interactions. MoTe2 is

APA, Harvard, Vancouver, ISO und andere Zitierweisen

16

Saadatkia, Pooneh. "Optoelectronic Properties of Wide Band Gap Semiconductors." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

17

Adhikari, Naresh. "Defects and Optoelectronic properties of Zinc oxide." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562770832047501.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

18

Henning, Xavier. "Optoelectronic properties of Bi2FeCrO6 ferroelectric thin films." Electronic Thesis or Diss., Strasbourg, 2024. http://www.theses.fr/2024STRAE009.

Der volle Inhalt der Quelle

Annotation:

Ce travail de thèse a consisté à approfondir la compréhension des propriétés optoélectroniques de films minces ferroélectriques prometteurs à base de Bi2FeCrO6 (BFCO). Pour ce faire, des caractérisations locales ont été réalisées conjointement avec des caractérisations macroscopiques. Une attention particulière a été portée à l’influence des lacunes d’oxygènes sur les propriétés photovoltaïques ferroélectriques. Les films minces de BFCO apparaissent systématiquement comme des semi-conducteurs de type « p », en raison des lacunes de Bi, Fe et Cr. Ces films forment alors une jonction p-n avec un

APA, Harvard, Vancouver, ISO und andere Zitierweisen

19

Chaudhary, Mahima. "Colloidal nanocrystals for optoelectronic devices optically controlled at the nanometric scale." Electronic Thesis or Diss., Université Paris sciences et lettres, 2022. http://www.theses.fr/2022UPSLS072.

Der volle Inhalt der Quelle

Annotation:

L'optoélectronique est un domaine technologique en croissance rapide qui implique l'utilisation d'appareils électroniques pour générer, détecter et contrôler la lumière. Ces dispositifs peuvent être utilisés dans une variété d'applications telles que les commutateurs photoconducteurs, les systèmes de contrôle d'accès automatique, les télécommunications, la mémoire et bien d'autres. Parce qu'il s'agit d'un domaine si vaste, la variété des dispositifs qui relèvent de l'optoélectronique est vaste. Dans ceThèse de doctorat, Je suis particulièrement intéressédanstraitable en solutionnanomatériaux c

APA, Harvard, Vancouver, ISO und andere Zitierweisen

20

Wang, Jianpu. "Optoelectronic properties and memory effects of ZnO nanocrystals." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611743.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

21

Lim, Shuang Fang. "Optoelectronic properties of polyfluorene homo- and co- polymers." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616021.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

22

Somani, P. R. "Optoelectronic properties of dye sensitized conducting polypyrrole films." Thesis(Ph.D.), CSIR-National Chemical Laboratory, Pune, 2001. http://dspace.ncl.res.in:8080/xmlui/handle/20.500.12252/6159.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

23

MASALA, SILVIA. "Synthesis and characterization of semiconductor nanoparticles and hybrid nanocomposites for optoelectronic applications." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2010. http://hdl.handle.net/10281/14820.

Der volle Inhalt der Quelle

Annotation:

Interest in nanoparticles and nanocomposites of hybrid organic/inorganic materials has increased considerably over the last decade, an interest that has been fueled by novel and exciting potential applications of these materials as electronic devices such as organic light emitting diodes, solar cells and sensors. Group IV semiconductors as well as compounds formed with group II-VI elements are among the most used inorganic materials in this field, mainly because their physical properties can be significantly altered at the nanoscale. The focus of this thesis is on the realization and the s

APA, Harvard, Vancouver, ISO und andere Zitierweisen

24

Indrehus, Sunniva. "Plasmonic properties of supported nanoparticles." Electronic Thesis or Diss., Sorbonne université, 2020. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2020SORUS136.pdf.

Der volle Inhalt der Quelle

Annotation:

Après quelques rappels d’électromagnétisme et sur la permittivité des métaux, le premier chapitre est dévolu à la présentation des nanoparticules en optique, et comment les modèles analytiques de polarisabilité permettent de prendre en compte la présence d’un substrat et de nanoparticules voisines. Les deux chapitres suivants reprend un certain nombre d’éléments de la théorie de Bedeaux-Vlieger sur la charge excédentaire et les susceptibilités de surface, et sa mise en œuvre pour les nanoparticules sur un substrat plan. Cette théorie, dont les bases ont été établies à la fin des années 70, a d

APA, Harvard, Vancouver, ISO und andere Zitierweisen

25

Qian, Wenjie. "Preparation and processing of molecular materials with optoelectronic properties." Doctoral thesis, Universitat Autònoma de Barcelona, 2018. http://hdl.handle.net/10803/664220.

Der volle Inhalt der Quelle

Annotation:

Materiales orgánicos basados en moléculas pequeñas con propiedades optoelectrónicas son particularmente atractivos en los campos de celdas solares orgánicas y en el campo de la electrónica molecular. Porfirinas y curcuminoides (CCMoids) son moléculas que suscitan interés, siendo buenas candidatas en los campos mencionados, debido a que presentan estructuras químicas modificables y excelentes propiedades electrónicas. En esta tesis, se han estudiado la preparación y diseño de moléculas pertenecientes a las dos familias aquí indicadas, la capacidad de autoensamblaje de dichas moléculas conjuntam

APA, Harvard, Vancouver, ISO und andere Zitierweisen

26

Zeisel, Roland. "Optoelectronic properties of defects in diamond and AlGaN alloys." [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962138452.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

27

Tong, Wing-yun. "Organic optoelectronic materials optical properties and 1D nanostructure fabrication /." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38574597.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

28

Tong, Wing-yun, and 唐穎潤. "Organic optoelectronic materials: optical properties and 1D nanostructure fabrication." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38574597.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

29

Sims, Marc. "Correlations between structure and optoelectronic properties of conjugated polymers." Thesis, University of Sheffield, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269457.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

30

Sciutto, Andrea. "Synthesis and optoelectronic properties of imidic peri-xanthenoxanthene derivatives." Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/115786/.

Der volle Inhalt der Quelle

Annotation:

Nowadays polycyclic aromatic hydrocarbons (PAHs) have been the object of study in the search for novel semiconductor materials. Synthetic research in this field is ongoing since the beginning of the century, but it was only in recent years that technological development caused an increased interest for the optoelectronic properties of such systems. As a result, spectroscopic studies revealed interesting properties of peri-xanthenoxanthene (PXX) and its derivatives that will be extensively presented and discussed in this thesis. Concerning the tuning and tailoring of the optoelectronic properti

APA, Harvard, Vancouver, ISO und andere Zitierweisen

31

Al-Ghamdi, Mohammed Saad. "Optoelectronic properties of InP AlGaInP quantum dot laser diodes." Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54948/.

Der volle Inhalt der Quelle

Annotation:

The aim of this thesis is to understand and optimise the optoelectronic properties of InP quantum dot laser diodes which operate in the range around 730nm required for various application such as the photodynamic therapy. The properties of wafers with two barrier widths, 8 and 6nm, each grown at different temperatures, 690, 710, 730 and 750T, and consisting of 5 layers of dots forms from different quantity of deposited material, 2, 2.5 and 3ML, are described and investigated. The laser and multisection devices of these structures are used to determine threshold current density, lasing waveleng

APA, Harvard, Vancouver, ISO und andere Zitierweisen

32

Manca, Marco. "Study of the optoelectronic properties of atomically thin WSe2." Thesis, Toulouse, INSA, 2019. http://www.theses.fr/2019ISAT0030.

Der volle Inhalt der Quelle

Annotation:

: Les dichalcogénures de métaux de transition (TMDs) constituent une famille de matériaux lamellaires riches de potentialités en optique et en électronique. La caractérisation des TMDs a permis la découverte de leurs propriétés physiques exceptionnelles : amincis à l’état de mono-feuillets, les TMDs semi-conducteurs deviennent des matériaux à bande interdite directe, donc très efficaces pour l’absorption ou l’émission de lumière. Le gap direct de ces semi-conducteurs est situé aux points K, à la frontière de la zone de Brillouin. Les propriétés optiques sont dominées par les excitons paires él

APA, Harvard, Vancouver, ISO und andere Zitierweisen

33

Desroches, Maude. "Exploiting the geometry of anthanthrone to harness optoelectronic properties." Doctoral thesis, Université Laval, 2018. http://hdl.handle.net/20.500.11794/29995.

Der volle Inhalt der Quelle

Annotation:

Depuis quelques années, un intérêt marqué pour les pigments de cuve a fait son apparition dans la littérature. Longtemps considérés comme des produits destinés exclusivement à la chimie fine industrielle, les pigments sont de plus en plus utilisés en recherche académique. Ils sont produits à l’échelle de la tonne pour des sommes avantageuses et leurs structures complexes permettent d’accéder à des molécules prisées en peu d’étapes synthétiques. La plupart de ces pigments sont des hydrocarbures aromatiques polycycliques possédant parfois des hétéroatomes, ce qui en fait des molécules de choix p

APA, Harvard, Vancouver, ISO und andere Zitierweisen

34

Moss, Kathryn Clare. "Novel intramolecular charge transfer materials and their optoelectronic properties." Thesis, Durham University, 2012. http://etheses.dur.ac.uk/3375/.

Der volle Inhalt der Quelle

Annotation:

A summary of aspects of the literature surrounding organic donor-acceptor systems for a variety of optoelectronic applications (OLEDs, OFETs, OPVs) is presented with a particular focus on two key moieties; 9,9-dialkylfluorene (F) and dibenzothiophene-S,S-dioxide (S). The development of these “building blocks” into novel systems capable of intramolecular charge transfer, i.e. donor-acceptor containing materials, is then discussed. The syntheses and photophysics of a number of novel fluorescent ambipolar trimers based on F and/or S are presented which allow investigations to be performed into th

APA, Harvard, Vancouver, ISO und andere Zitierweisen

35

Sutradhar, Tanushree. "Theoretical investigation on optoelectronic properties of nanoclusters and conjugates." Thesis, University of North Bengal, 2021. http://ir.nbu.ac.in/handle/123456789/4750.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

36

Stanislavov, A. S., L. B. Sukhodub, V. N. Kuznetsov, Леонід Федорович Суходуб, Леонид Федорович Суходуб, and Leonid Fedorovych Sukhodub. "Magnetite-polymer Nanoparticles: Structure and Properties." Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42573.

Der volle Inhalt der Quelle

Annotation:

The paper describes synthesis of magnetite-alginate composites. The main feature of such biomaterials is the simultaneous formation of magnetite nanoparticles inside the alginate matrix. Obtained samples were characterized by X-ray diffraction and transmission electron microscopy. In several samples the secondary phase of ammonium chloride was observed. The average crystallite sizes of magnetite phase are about 13 nm. The addition of alginate leads to the decrease of microstrains in [h k 0] direction.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

37

Oleynik, Nikolay. "MOVPE growth and characterisation of ZnO properties for optoelectronic applications." [S.l.] : [s.n.], 2007. http://diglib.uni-magdeburg.de/Dissertationen/2007/nikoleynik.htm.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

38

Mexis, Meletios. "Optoelectronic properties of InAs GaAs columnar quantum dot laser diodes." Thesis, Cardiff University, 2008. http://orca.cf.ac.uk/54843/.

Der volle Inhalt der Quelle

Annotation:

In this thesis results are described with the aim of examining the optoelectronic properties of InAs/GaAs columnar quantum-dots and comparing them with those of more conventional self-assembled quantum-dots. The polarisation properties of a set of columnar quantum-dot samples — of varied aspect ratio and In compositional contrast between the rod-shaped dot and the surrounding 2-D layer — are studied. For this investigation a new method to obtain the ratio of the fundamental TE/TM optical response using edge photo-absorption spectroscopy is proposed, which corrects for the polarisat

APA, Harvard, Vancouver, ISO und andere Zitierweisen

39

金益民. "Optoelectronic properties of the poly(3-hexylthiophene):ZnO nanoparticles composite thin films." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/30052816894783429162.

Der volle Inhalt der Quelle

Annotation:

博士<br>國立彰化師範大學<br>光電科技研究所<br>102<br>In this study, three topics of issue are discussed. In the first experiment, the effects of the incorporation of ZnO nanoparticles into poly(3-hexylthiophene) (P3HT) was investigated. Hall measurements were performed for demonstrating the carrier conduction mechanism. From the experimental results, conductivity proportional to ZnO doping was observed. The improvement of conductivity is considered to mainly come from a mobility enhancement. Hall-effect analysis by using the polaron theory revealed that ZnO doping might lead to an increased spacing between mol

APA, Harvard, Vancouver, ISO und andere Zitierweisen

40

Chih-HsuehLan and 藍志學. "Optoelectronic Properties of III-NitrideSemiconductor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/80333670452470328806.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

41

Chen, Tzung-Te, and 陳宗德. "Optoelectronic Properties of Semiconductor Nanostructures." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/85121254711223240081.

Der volle Inhalt der Quelle

Annotation:

博士<br>國立臺灣大學<br>物理研究所<br>96<br>In this thesis, we have reported the optoelectronic properties of the semiconductor nanostructures. In part I, the optical anisotropy in type-I and type-II semiconductor nanostructures have been well investigated through the photoluminescence (PL) and scanning electron microscopy (SEM) measurements. In part II, we have investigated the photoelastic effect and the strain relaxation in semiconductor nanostructures through the electroluminescence (EL), PL, and Raman scattering measurements, which will shift the frequencies of the phonon modes and the band-edge trans

APA, Harvard, Vancouver, ISO und andere Zitierweisen

42

Chen, Tzung-Te. "Optoelectronic Properties of Semiconductor Nanostructures." 2008. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-0707200812263000.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

43

Chen, Cheng-Hsin, and 陳政欣. "Optoelectronic Properties of III-Nitride Semiconductors." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/58653479958427350469.

Der volle Inhalt der Quelle

Annotation:

博士<br>國立臺灣大學<br>物理學研究所<br>91<br>Abstract This thesis concerns with the studies on the optical and electrical properties of III-Nitride semiconductors. Photoluminescence (PL), photoluminescence excitation (PLE), time-resolved photoluminescence, Cathodoluminescence (CL), Scanning Electron Microscopy (SEM), photoconductivity (PC), persistent photoconductivity (PPC), and Raman scattering are carried out to study the physical properties of III-Nitride materials, including GaN/AlGaN superlattices, InAlGaN quaternary alloys, and InGaN/GaN multiple quantum wells. Many peculiar phenomena hav

APA, Harvard, Vancouver, ISO und andere Zitierweisen

44

Chang, Hsiu-Ju. "Optoelectronic Properties of III-Nitride Semiconductors." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2606200718315900.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

45

Huang, Yuan-Fu, and 黃元甫. "Optoelectronic Properties of Graphene Triple Heterojunction." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9rstdy.

Der volle Inhalt der Quelle

Annotation:

碩士<br>國立臺灣大學<br>物理學研究所<br>106<br>Heterostructure, the interface between two non-identical materials are widely used efficient strategy to engineer the electronic and optoelectronic devices. Herein, we have designed a triple heterojunction using graphene sandwiched by p- and n-type semiconductors, P3HT and ZnO. Owing to the atomically thin nature of graphene, the electric field generated at the triple interface in thermal equilibrium can penetrate through graphene to interfere the optoelectronic properties of the semiconducting layers. The existence of unique Dirac cone at the junction gives ri

APA, Harvard, Vancouver, ISO und andere Zitierweisen

46

Wan, De-Hui, and 萬德輝. "Applying nanoparticles to develop specific chemical sensors and optoelectronic devices." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/10003167104612499183.

Der volle Inhalt der Quelle

Annotation:

博士<br>臺灣大學<br>材料科學與工程學研究所<br>98<br>In this thesis, we utilized unique physical (optical, photothermal) and chemical properties (chemical affinity, catalytic) of metal nanoparticles (NPs) to develop specific chemical sensors and optoelectronic devices. In chapters 1-3, we briefly introduce the research background, literature reviews and the experimental details. In chapter 4, we suggest two kinds of metal-NP based chemical sensors on Si or flexible substrates. (i) We describe the optical constants of self-assembled hollow gold nanoparticle (HGN) monolayers determined through spectroscopic ellip

APA, Harvard, Vancouver, ISO und andere Zitierweisen

47

Chiu, Jiann Jong, and 曲建仲. "Organic Semiconductor Nanostructures and Their Optoelectronic Properties." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/84831288157159606745.

Der volle Inhalt der Quelle

Annotation:

博士<br>國立臺灣大學<br>電機工程學研究所<br>92<br>Nanotechnology has become an important and popular research subject recently, because the quantum size effect of nano-structured materials, such as nanowires and nanoparticles, may induce new optical and electronic properties compared with those of conventional materials. Much attention is then turned to nanometer-sized organic materials due to many unique properties such as flexibility, high photoconductivity, and nonlinear optical effects that may offer novel applications in nano-optoelectronic devices. In this study, a widely-used material of organic light

APA, Harvard, Vancouver, ISO und andere Zitierweisen

48

Kuo, Po-Fen, and 郭博棻. "Growth and Optoelectronic Properties of SiCN Nanorods." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/74131759733476557883.

Der volle Inhalt der Quelle

Annotation:

碩士<br>國立臺灣大學<br>物理學研究所<br>88<br>We report here a novel two stage method for the growth of one-dimensional single crystal nanorods, which are comprised of Si, C, and N. The first stage involves high-density nucleation on Si substrate by using electron cyclotron resonance plasma-enhanced chemical vapor deposition ( ECRCVD ), while the second stage involves nanorod growth using microwave plasma-enhanced chemical vapor deposition ( MWCVD ) in order to achieve a high growth rate along a preferred orientation. The high-resolution scanning electron microscopic ( HRSEM ) images show that the nanorods

APA, Harvard, Vancouver, ISO und andere Zitierweisen

49

Chang, S. W., and 張尚文. "Growth and optoelectronic properties of SiCN nanostructures." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/60801162703961536078.

Der volle Inhalt der Quelle

Annotation:

碩士<br>國立臺灣大學<br>物理學研究所<br>88<br>In this thesis, an innovative two-stage growth strategy will be presented for the growth of SiCN nanorods and nanowires. In the first stage, an electron cyclotron resonance chemical vapor deposition (ECR-CVD) method was employed to deposit nano-crystalline SiCN buffer layers with various densities on silicon substrates. In the second stage, SiCN nanorods and nanowires were grown rapidly and anisotropically in a microwave plasma enhanced chemical vapor deposition (MW-PECVD) The density of the nanorods or nanowires were determined by the density of the nanocrystal

APA, Harvard, Vancouver, ISO und andere Zitierweisen

50

Huang, Kuan-Lin, and 黃冠霖. "Optoelectronic Properties of Free-Standing InGaN Membranes." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/54161441798079208387.

Der volle Inhalt der Quelle

Annotation:

碩士<br>國立中興大學<br>材料科學與工程學系所<br>103<br>In this thesis, sacrificial layer is embedded under the 300 nm-thick light emitting diode device with top ITO/Ti/Au thin film deposited on the wafer to protect device. After the electrochemical wet etching, nano-membrane LED are not subject to vertical etching and dramatically increased the lateral etching rate to 250 μm/min. In electrochemical wet etching process, the mechanical stress of ITO/Ti/Au protective layer not only crack the (101 ̅1 ̅) hexagonal pyramid structure but also enhanced the lateral etching rate. In addition to the hexagonal pyramid stru

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Wir bieten Rabatte auf alle Premium-Pläne für Autoren, deren Werke in thematische Literatursammlungen aufgenommen wurden. Kontaktieren Sie uns, um einen einzigartigen Promo-Code zu erhalten!