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Thematische Bibliographien / Ni(GeSn)

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Zeitschriftenartikel

Auswahl der wissenschaftlichen Literatur zum Thema „Ni(GeSn)“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

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Zeitschriftenartikel zum Thema "Ni(GeSn)"

1

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "Impact and behavior of Sn during the Ni/GeSn solid-state reaction." Journal of Applied Crystallography 53, no. 3 (2020): 605–13. http://dx.doi.org/10.1107/s1600576720003064.

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Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results sho

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2

Abdi, S., S. Assali, M. R. M. Atalla, S. Koelling, J. M. Warrender, and O. Moutanabbir. "Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge_0.89Sn_0.11." Journal of Applied Physics 131, no. 10 (2022): 105304. http://dx.doi.org/10.1063/5.0077331.

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The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all processing steps of GeSn devices is essential to avoid possible material degradation. This constraint is exacerbated by the need for higher Sn contents exceeding 8 at. % along with an enhanced strain relaxation to achieve efficient mid-infrared devices. Herein, as a low thermal budget solution for post-epitaxy processing, we elucidate the effects of laser therma

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3

Coudurier, Nicolas, Andrea Quintero, Virginie Loup, et al. "Plasma surface treatment of GeSn layers and its subsequent impact on Ni / GeSn solid-state reaction." Microelectronic Engineering 257 (March 2022): 111737. http://dx.doi.org/10.1016/j.mee.2022.111737.

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4

Li, H., H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, and Y. W. Suen. "Electrical characteristics of Ni Ohmic contact on n-type GeSn." Applied Physics Letters 104, no. 24 (2014): 241904. http://dx.doi.org/10.1063/1.4883748.

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5

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni-based metallization of GeSn layers: A review and recent advances." Microelectronic Engineering 269 (January 2023): 111919. http://dx.doi.org/10.1016/j.mee.2022.111919.

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6

Jheng, Li Sian, Hui Li, Chiao Chang, Hung Hsiang Cheng, and Liang Chen Li. "Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn." AIP Advances 7, no. 9 (2017): 095324. http://dx.doi.org/10.1063/1.4997348.

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7

Junk, Yannik, Mingshan Liu, Marvin Frauenrath, et al. "Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs." ECS Meeting Abstracts MA2022-01, no. 29 (2022): 1285. http://dx.doi.org/10.1149/ma2022-01291285mtgabs.

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In recent years, Ge-based group-IV alloys (GeSn, SiGeSn) have received a significant amount of attention as candidates to replace Silicon for future low power and high performance nanoelectronics [1]. The interest in these materials stems primarily from the fact that, by varying the Sn-content of the alloy, it is possible to precisely tune its bandgap from indirect to direct [2], which even opens up the possibility to switch the carrier transport from larger mass low mobility L-valley electrons to the lower mass and high mobility Γ-valley electrons. Adding Si atoms into GeSn alloys enables add

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8

Quintero, A., F. Mazen, P. Gergaud, et al. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation." Journal of Applied Physics 129, no. 11 (2021): 115302. http://dx.doi.org/10.1063/5.0038253.

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9

Zhang, Xu, Dongliang Zhang, Jun Zheng, et al. "Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn." Solid-State Electronics 114 (December 2015): 178–81. http://dx.doi.org/10.1016/j.sse.2015.09.010.

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10

Quintero, Andrea, Patrice Gergaud, Joris Aubin, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase." Journal of Applied Crystallography 51, no. 4 (2018): 1133–40. http://dx.doi.org/10.1107/s1600576718008786.

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The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ∊-Ni5(Ge0.9Sn0.1)

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