Thematische Bibliographien / Nanosecond laser annealing

Inhaltsverzeichnis

Zeitschriftenartikel
Dissertationen
Buchteile
Konferenzberichte

Auswahl der wissenschaftlichen Literatur zum Thema „Nanosecond laser annealing“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an

Wählen Sie eine Art der Quelle aus:

Machen Sie sich mit den Listen der aktuellen Artikel, Bücher, Dissertationen, Berichten und anderer wissenschaftlichen Quellen zum Thema "Nanosecond laser annealing" bekannt.

Neben jedem Werk im Literaturverzeichnis ist die Option "Zur Bibliographie hinzufügen" verfügbar. Nutzen Sie sie, wird Ihre bibliographische Angabe des gewählten Werkes nach der nötigen Zitierweise (APA, MLA, Harvard, Chicago, Vancouver usw.) automatisch gestaltet.

Sie können auch den vollen Text der wissenschaftlichen Publikation im PDF-Format herunterladen und eine Online-Annotation der Arbeit lesen, wenn die relevanten Parameter in den Metadaten verfügbar sind.

Zeitschriftenartikel zum Thema "Nanosecond laser annealing"

Pilipovich, V. A., V. L. Malevich, G. D. Ivlev und V. V. Zhidkov. „Dynamics of nanosecond laser annealing of silicon“. Journal of Engineering Physics 48, Nr. 2 (Februar 1985): 228–33. http://dx.doi.org/10.1007/bf00871878.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Casiez, L., N. Bernier, J. Chrétien, J. Richy, D. Rouchon, M. Bertrand, F. Mazen et al. „Recrystallization of thick implanted GeSn layers with nanosecond laser annealing“. Journal of Applied Physics 131, Nr. 15 (21.04.2022): 153103. http://dx.doi.org/10.1063/5.0085107.

Der volle Inhalt der Quelle

Annotation:

We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized by dopant implantation. The fully recrystallized GeSn layers present specific structures with localized tin and strain variations. Above the non-amorphized and unmelted Ge0.92Sn0.08 seed layer, a first highly tensile strained GeSn sublayer is formed, with a tin gradient from 2.5% up to 10.5%. Closer to the surface, a second sublayer consists of tin-enriched vertical structures in a Ge0.93Sn0.07 matrix. Laser annealing enables us to reverse the strain of the GeSn layer. The initial GeSn presents a compressive strain of −0.10%, while the recrystallized Ge0.93Sn0.07 matrix is tensile strained at 0.39%. UV-NLA presents the advantages of (i) local annealing that recrystallizes amorphized GeSn layers after implantation without excessive tin segregation and (ii) reversing the strain of epitaxial GeSn layers from compressive to tensile. Our results open up promising perspectives for the integration of GeSn mid-IR photonic devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Larrey, Vincent, Arthur Arribehaute, Brendon Caulfield, Pablo Acosta Alba, Christophe Morales, Paul Noël, Mathieu Opprecht, Frank Fournel, Didier Landru und Francois Rieutord. „Nanosecond Laser Irradiation for Interface Bonding Characterization“. ECS Meeting Abstracts MA2023-02, Nr. 33 (22.12.2023): 1589. http://dx.doi.org/10.1149/ma2023-02331589mtgabs.

Der volle Inhalt der Quelle

Annotation:

Hydrophilic direct bonding is nowadays widely used in microelectronics for SOI substrate fabrication and 3D integration. Trapped water at the bonding interface plays a key role in the adhesion and adherence mechanisms [1]. Previous studies also reported that water could penetrate the bonding interface. This may modify the radial inhomogeneity of water [2]. However, this reported technique requires specific Silicon-to-Silicon bonding, lacks precision and needs additional characterizations (XRR, FTIR) to quantify the amount of trapped water at the bonding interface. In this work, we present an original methodology that can both accurately characterize and quantify water imbibition. Pulsed nanosecond laser annealing enables to reach extremely high temperatures, above the silicon melting point (1414°C), for very short durations (from a few tens of ns to a few hundred ns). These annealing conditions result in silicon surface melt. The beginning of melting is heterogeneous and leads to a particular surface topology with the formation of molten islands during laser annealing [3]. Recrystallization of these molten islands results in a localized increase of roughness (see fig. 1a). This roughness can exceed the direct bonding critical roughness. Non-bonded areas, i.e. bonding defects, can then be intentionally and precisely placed at the direct bonding interface. In a first step, bonding defects were thus formed along a wafer diameter with a 2 mm pitch. Then, using high-resolution acoustic microscopy, the bonding defects radii evolution was measured over time after direct bonding and without annealing (see fig. 1b). A progressive growth of defect radii was evidenced when getting closer and closer to the wafer edge. An additional water amount coming from the clean room atmosphere resulted in silicon oxidation at room temperature and di-hydrogen generation. Di-hydrogen was then trapped by bonding defects. In other words, bonding defects acted as humidity sensors. We could then record the penetration length and plot it as a function of the square root of time (fig. 1c). The penetration rate is the equivalent of a diffusion coefficient that could be calculated for both Silicon-to-Silicon and Silicon-to-Oxide bonding. We noted a very good agreement with Tedjini’s results for Silicon-to-Silicon bonding [2]. Meanwhile the calculated diffusion coefficient for Silicon-to-Oxide bonding was surprisingly about twice higher. Second, a bonding defect network with the same 2 mm pitch in both X and Y direction was created. After direct bonding, various duration 500°C temperature anneals were performed. The defects radii evolution was once again measured. As it increased over time, we could write the Griffith equilibrium between elastic (due to defect pressure) and surface (γ) energies. Describing defects as circular blisters, the amount of di-hydrogen trapped molecules could then be calculated. Plotting this number of H2 molecules, N, as a function of the annealing time (fig. 1d), we observe that a plateau was reached, meaning that all the di-hydrogen produced in the network was collected in the bonding defects. The water amount responsible for this di-hydrogen generation could then be evaluated and compared to data from other measurements. REFERENCES [1] F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean, F. Rieutord, and H. Moriceau, “Water Stress Corrosion in Bonded Structures”, ECS Journal of Solid State Science and Technology, 4 (5) P124-P130 (2015) [2] Tedjini M, Fournel F, Moriceau H, Larrey V, Landru D, Kononchuk O, et al. Interface water diffusion in silicon direct bonding. Appl Phys Lett. 12 sept 2016;109(11):111603. [3] L. Dagault, S. Kerdilès, P. Acosta Alba, J.-M. Hartmann, J.-P. Barnes, P. Gergaud, E. Scheid, and F. Cristiano, Investigation of Recrystallization and Stress Relaxation in Nanosecond Laser Annealed Si1−xGex/Si Epilayers, Appl. Surf. Sci. 527, 146752 (2020). Figure 1

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Zhvavyi, S. P., und O. L. Sadovskaya. „Nanosecond Laser Annealing of Implanted Silicon: Simulation of Dynamics“. Physica Status Solidi (a) 112, Nr. 1 (16.03.1989): K19—K22. http://dx.doi.org/10.1002/pssa.2211120166.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Gerlinger, Kathinka, Bastian Pfau, Martin Hennecke, Lisa-Marie Kern, Ingo Will, Tino Noll, Markus Weigand et al. „Pump–probe x-ray microscopy of photo-induced magnetization dynamics at MHz repetition rates“. Structural Dynamics 10, Nr. 2 (März 2023): 024301. http://dx.doi.org/10.1063/4.0000167.

Der volle Inhalt der Quelle

Annotation:

We present time-resolved scanning x-ray microscopy measurements with picosecond photo-excitation via a tailored infrared pump laser at a scanning transmission x-ray microscope. Specifically, we image the laser-induced demagnetization and remagnetization of thin ferrimagnetic GdFe films proceeding on a few nanoseconds timescale. Controlling the heat load on the sample via additional reflector and heatsink layers allows us to conduct destruction-free measurements at a repetition rate of 50 MHz. Near-field enhancement of the photo-excitation and controlled annealing effects lead to laterally heterogeneous magnetization dynamics which we trace with 30 nm spatial resolution. Our work opens new opportunities to study photo-induced dynamics on the nanometer scale, with access to picosecond to nanosecond time scales, which is of technological relevance, especially in the field of magnetism.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Park, Sang Yeon, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon et al. „355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors“. Micromachines 15, Nr. 1 (05.01.2024): 103. http://dx.doi.org/10.3390/mi15010103.

Der volle Inhalt der Quelle

Annotation:

Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Alloyeau, Damien, Christian Ricolleau, Cyril Langlois, Yann Le Bouar und Annick Loiseau. „Flash laser annealing for controlling size and shape of magnetic alloy nanoparticles“. Beilstein Journal of Nanotechnology 1 (22.11.2010): 55–59. http://dx.doi.org/10.3762/bjnano.1.7.

Der volle Inhalt der Quelle

Annotation:

We propose an original route to prepare magnetic alloy nanoparticles with uniform size and shape by using nanosecond annealing under pulsed laser irradiation. As demonstrated here on CoPt nanoparticles, flash laser annealing gives an unprecedented opportunity to control the size and the shape of bimetallic nanoparticles without changing their composition. The mechanisms involved in the complete reshaping of the nanoparticle thin films are discussed and it is also shown that order-disorder phase transformations occur under laser irradiation. This technique is then very interesting for magnetic alloy nanoparticles studies and applications because it opens up a new way to fabricate size-controlled spherical nanoparticles with narrow size dispersion.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Coelho, João M. P., Catarina Silva, Andreia Ruivo und António Pires de Matos. „Infrared Nanosecond Laser Radiation in the Creation of Gold and Copper Nanoparticles“. Materials Science Forum 730-732 (November 2012): 915–19. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.915.

Der volle Inhalt der Quelle

Annotation:

Metal nanoparticles inside glass present useful properties to photonic applications and have been object of several research works. In particular, laser beams have shown their potential in its creation and both ultraviolet beams with nanosecond pulses, and near-infrared beams with femtosecond pulses, have been used. In this paper, the authors add new possibilities by experimentally demonstrating that it is possible to achieve the same results by using near-infrared laser beams and nanosecond pulses. Copper and gold nanoparticles are created in silica-doped glass using nanosecond laser pulses in the near-infrared. Recorded absorption spectra of the glass samples before, and after laser irradiation and further annealing allowed measuring absorption peaks located at 537 nm for copper and 563 nm for gold, which are in accordance with the expected values. Based on Mie theory and using the full-width half maximum for those peaks, the average particle radii of the embedded nanoparticles was estimated to be about 7 nm for copper and 3 nm for gold nanoparticles, respectively.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Deng, Ying, Anthony Pelton und R. A. Mayanovic. „Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition“. MRS Advances 1, Nr. 39 (2016): 2737–42. http://dx.doi.org/10.1557/adv.2016.311.

Der volle Inhalt der Quelle

Annotation:

ABSTRACTPulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

de Silva, Milantha, Seiji Ishikawa, Takamaro Kikkawa und Shinichiro Kuroki. „Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing“. Materials Science Forum 858 (Mai 2016): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.858.549.

Der volle Inhalt der Quelle

Annotation:

Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with carbon-interstitial type metal, Nb was demonstrated. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and constant resistance between NiSi and SiC substrate becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also carbon-interstitial type metal Nb to form metal carbides was introduced. Ni/Nb/SiC multilayer contact and NbNi mixed contact were formed on C-face side of 4H-SiC wafers. Electrical contact properties were investigated after 45 nanoseconds pulse laser annealing in N2 ambient. As the result, at the NbNi mixed contact, specific contact resistance of 2.4×10-4 Ωcm2 was realized.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Mehr Quellen

Dissertationen zum Thema "Nanosecond laser annealing"

Esposito, Laura. „Mise en oeuvre de procédés innovants pour l'optimisation de contacts TiSi pour les technologies imageurs avancées“. Electronic Thesis or Diss., Aix-Marseille, 2021. http://theses.univ-amu.fr.lama.univ-amu.fr/210319_ESPOSITO_505pj561fjb969hmp55qmrno_TH.pdf.

Der volle Inhalt der Quelle

Annotation:

Dans les dispositifs de capteurs d’image les siliciures de titane sont utilisés afin de réaliser les contacts entre les transistors et les interconnections de cuivre. Une nouvelle problématique émerge alors d’une co-intégration des contacts en siliciures de Ti et de nickel : former le siliciure de titane optimal (C54-TiSi2) a une température plus faible que la température de formation classique (800°C). Afin de réduire la température de formation du siliciure, l’influence du recuit laser nanoseconde UV (UV-NLA) sur la formation des contacts en siliciures de Ti a été étudiée. Pour cela, des dépôts consécutifs de films de Ti et de TiN avec des épaisseurs inférieures à 10 nm ont été réalisés après un traitement de surface spécifique. Des recuits par UV-NLA à différentes densités d’énergies appliquées selon différents nombres de tirs et suivis par des recuits thermiques rapides (RTA) ont été réalisés. Les différents échantillons ont été caractérisés par plusieurs méthodes dont la mesure quatre pointes, la diffraction de rayons X, et la microscopie électronique en transmission. L'utilisation du UV-NLA permet la formation d’une phase amorphe à l’état solide, puis dans le cas de l’utilisation du laser avec plusieurs tirs combinés à un RTA ultérieur, la formation de la phase C54-TiSi2 à basse température a été démontrée. Les études réalisées sur les substrats dopés et/ou polycristallins, ainsi que ceux sur plaques avec motifs photolithographiés indiquent que dans l’état actuel, l’intégration du traitement UV-NLA dans le processus d’industrialisation est plus complexe qu’escomptée. Des perspectives permettant de favoriser l’intégration de ce nouveau recuit sont également discutées
In image sensor devices, Ti silicides are used to establish contacts between transistors and copper interconnects. A new problematic emerges with the co-integration of Ti-based and Ni-based silicided contacts: the titanium silicide (C54-TiSi2) needs to be formed at a lower temperature than the conventional formation temperature (800°C). In order to reduce the temperature of silicide formation, the influence of nanosecond laser annealing on Ti silicide contact formation has been investigated in this PhD work. To do so, consecutive deposition of Ti and TiN films with thicknesses below 10 nm were carried out after a specific surface treatment. Annealing by UV nanosecond laser (UV-NLA) at different energy densities, different numbers of shots and followed by rapid thermal annealing (RTA) for various temperatures were performed. The different samples were characterized by several methods including: four-point probe measurements, X-ray diffraction, and transmission electron microscopy. The main results obtained with the use of UV-NLA are the following: it enables the formation of an amorphous phase in the solid state and the formation of the metastable C40-TiSi2 phase becomes possible by melting the first nanometers of the substrate. By combining multiple laser shots and a subsequent RTA, the formation of the C54-TiSi2 phase at low temperature of 650 °C has been demonstrated. Studies carried out on doped and/or polycrystalline substrates, as well as on wafers with nanometric patterns indicate that, in the current state, the integration of UV- NLA into the industrial process is more complex than expected. Prospects for promoting the integration of UV-NLA are also discussed

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Larmande, Yannick. „Réalisation de jonctions ultra-minces par recuit laser : applications aux détecteurs UV“. Thesis, Aix-Marseille 2, 2010. http://www.theses.fr/2010AIX22114/document.

Der volle Inhalt der Quelle

Annotation:

Depuis les années 1970, la taille des composants n’a cessé de diminuer. La réalisation de jonctions ultra-minces et fortement dopées est devenue un point clef dans la réduction des dispositifs microélectroniques. Les techniques de production doivent évoluer afin de répondre aux spécifications drastiques, en termes de taille des zones dopées et de leurs propriétés électriques, des prochains noeuds technologiques. Dans ce travail de thèse nous avons étudié le procédé d’activation au laser de dopants implantés par immersion plasma. Le laser à excimère utilisé (ArF) est absorbé dans moins de 10 nmde silicium, ce qui va permettre un recuit local. De plus, la courte durée d’impulsion va assurer un faible budget thermique, limitant la diffusion des dopants. En associant cette technique à l’implantation ionique par immersion plasma, dont l’intérêt est de pouvoir travailler à de très basses tensions d’accélération (quelques dizaines d’eV), nous pouvons réaliser des jonctions avec un fort taux d’activation sans diffusion. Après avoir présenté les différentes techniques de dopage pouvant être utilisées, nous avons décrit les dispositifs expérimentaux de traitement et de caractérisation utilisés. Des simulations ont permis de comprendre le rôle des paramètres laser sur le profil de température du siliciumen surface. Après avoir choisi le laser le plus adapté parmi les lasers ArF, KrF et XeCl (respectivement: 193 nm - 15 ns, 248 nm - 35 ns, 308 nm - 50 ns), nous avons observé l’effet du nombre de tirs et de la mise en forme de faisceau afin d’optimiser le procédé. Pour terminer, des inhomogénéités dues aux bords de faisceau ont été mises en évidence et étudiées afin d’enlimiter l’effet
Since the 1970’s, the components size has steadily declined. The realization of highly-dopedultra shallow junctions became a key point in the reduction of microelectronic devices. Them anufacturing processes must evolve to meet the stringent specifications of the next technologynodes, in particular in terms of dimension and electrical properties of the doped area.In this thesis we have studied the process of laser annealing of dopants implanted by plasmaimmersion. The ArF excimer laser we used is absorbed in less than 10 nm of silicon, whichallows a local heating. Moreover, the short pulse duration provides a low thermal budget whichreduces the dopant diffusion. By combining this technique with plasma immersion ion implantation, which is interesting because of the very low acceleration voltage (few tens of eV), we can produce highly activated junctions without diffusion. After a presentation of the different doping techniques that may be used, we describe the experimental treatment and the characterization tools that we used. We have used numerical simulations to understand the role of the laser parameters on the temperature profile of the silicon surface. After choosing the most suitable laser between ArF, KrF and XeCl (respectively :193 nm - 15 ns, 248 nm - 35 ns, 308 nm - 50 ns), we studied the influence of the number of shots and beam shaping to optimize the process. Finally, inhomogeneities caused by the beam edgeshave been studied and identified in order to improve the laser scan process

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Darif, Mohamed. „Etude de la recristallisation du silicium par procédé laser nanoseconde pour la formation et le contrôle des jonctions ultraminces“. Phd thesis, Université d'Orléans, 2011. http://tel.archives-ouvertes.fr/tel-00639065.

Der volle Inhalt der Quelle

Annotation:

La réalisation des jonctions ultra-minces et fortement dopées est un enjeu majeur pour la continuité de la miniaturisation des dispositifs microélectroniques. Les techniques de production en termes d'implantation ionique et de recuit d'activation doivent évoluer afin de répondre aux exigences du marché de la microélectronique. Le travail de recherche de cette thèse s'inscrit dans le cadre du projet ALDIP (Activation Laser de Dopants implantés par Immersion Plasma) et a pour objectif l'étude et le contrôle du procédé laser pour la réalisation des jonctions ultra-minces sur silicium (cristallin ou préamorphisé par implantation ionique) dopé au bore. En effet, le contrôle in situ du processus de recuit laser s'avère indispensable pour l'industrialisation de ce procédé qui jusqu'au là a fait l'objet de plusieurs études de recherche. Ainsi, le travail réalisé durant cette thèse a permis de mettre en place une méthode de contrôle, in situ, qui a été calibrée afin de la rendre accessible par le milieu industriel. Il s'agit de la méthode RRT (Réflectivité Résolue en Temps). Pour mener ce travail de thèse à terme, nous avons utilisé deux dispositifs expérimentaux comportant chacun un laser UV impulsionnel nanoseconde, un système optique d'homogénéisation et un dispositif RRT. Par ailleurs, plusieurs techniques de caractérisation ex situ ont été employées (TOF-SIMS, MEB, ...) notamment dans l'objectif de calibrer la méthode RRT. Ce travail expérimental a été couplé à une étude de simulation numérique qui a permis de mieux comprendre les paramètres clés du recuit laser et qui s'est souvent avérée en bon accord avec les résultats expérimentaux obtenus.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Buchteile zum Thema "Nanosecond laser annealing"

Balandin, V. Yu, A. V. Dvurechenskii und L. N. Aleksandrov. „INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING“. In EPM 87. Energy Pulse and Particle Beam Modification of Materials, 524–26. De Gruyter, 1988. http://dx.doi.org/10.1515/9783112611203-140.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Ivlev, G. D. „INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING“. In EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR, 231–33. De Gruyter, 1989. http://dx.doi.org/10.1515/9783112575666-048.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Zhvavyi, S. P., und O. L. Sadovskaja. „SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT“. In EPM 87. Energy Pulse and Particle Beam Modification of Materials, 533–35. De Gruyter, 1988. http://dx.doi.org/10.1515/9783112611203-143.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Konferenzberichte zum Thema "Nanosecond laser annealing"

Jourdan, Nicolas, Fabien Roze, Toshiyuki Tabata, Stephane Lariviere, Antonito Contino, Fulvio Mazzamuto und Tokei Zsolt. „UV nanosecond laser annealing for Ru interconnects“. In 2020 IEEE International Interconnect Technology Conference (IITC). IEEE, 2020. http://dx.doi.org/10.1109/iitc47697.2020.9515608.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Abdou, N. Zerhouni, P. Acosta-Alba, L. Brunet, M. Opprecht, F. Milesi, M. Gallard, S. Reboh und I. Ionica. „EZ-FET junctions activation by nanosecond laser annealing“. In 2023 21st International Workshop on Junction Technology (IWJT). IEEE, 2023. http://dx.doi.org/10.23919/iwjt59028.2023.10175175.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Sulehria, Yasir, Oleg Gluschenkov, Michael Willemann und Shaoyin Chen. „Energy Density and Temperature Calibration for FEOL Nanosecond Laser Annealing“. In 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2020. http://dx.doi.org/10.1109/asmc49169.2020.9185306.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Cristiano, F., Y. Qiu, E. Bedel-Pereira, K. Huet, F. Mazzamuto, G. Fisicaro, A. La Magna et al. „Extended defects in ion-implanted si during nanosecond laser annealing“. In 2014 14th International Workshop on Junction Technology (IWJT). IEEE, 2014. http://dx.doi.org/10.1109/iwjt.2014.6842019.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Mathieu, Benoit, Claire Fenouillet-Beranger, Sebastien Kerdiles und Jean-Charles Barbe. „Thermal simulation of nanosecond laser annealing of 3D sequential VLSI“. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292269.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Royet, A.-S., L. Dagault, S. Kerdiles, P. Acosta Alba, J. P. Barnes, F. Cristiano und K. Huet. „Undoped SiGe material calibration for numerical nanosecond laser annealing simulations“. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2020. http://dx.doi.org/10.23919/sispad49475.2020.9241664.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

BESAUCELE, HERVE, LAURENT RUET, AUDREY ADNET, FRANCOIS BEAU, CEDRIC BELLIER, PAUL CECCATO, MAXIME CHATELAIN et al. „High energy excimer laser system for nanosecond annealing of semiconductor devices“. In XXII International Symposium on High Power Laser Systems and Applications, herausgegeben von Paolo Di Lazzaro. SPIE, 2019. http://dx.doi.org/10.1117/12.2522443.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Tabata, Toshiyuki, Pierre-Edouard Raynal, Fabien Roze, Sebastien Halty, Louis Thuries, Fuccio Cristiano, Emmanuel Scheid und Fulvio Mazzamuto. „Copper Large-Scale Grain Growth by UV Nanosecond Pulsed Laser Annealing“. In 2021 IEEE International Interconnect Technology Conference (IITC). IEEE, 2021. http://dx.doi.org/10.1109/iitc51362.2021.9537312.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Esposito, Laura, Sebastien Kerdiles, Magali Gregoire und Dominique Mangelinck. „Impact of Nanosecond Laser Annealing on the Formation of Titanium Silicides“. In 2021 20th International Workshop on Junction Technology (IWJT). IEEE, 2021. http://dx.doi.org/10.23919/iwjt52818.2021.9609410.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Chih-Chao Yang, Tung-Ying Hsieh, Wen-Hsien Huang, Hsing-Hsiang Wang, Chang-Hong Shen und Jia-Min Shieh. „Sequentially stacked 3DIC technology using green nanosecond laser crystallization and laser spike annealing technologies“. In 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2015. http://dx.doi.org/10.1109/ipfa.2015.7224423.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Wir bieten Rabatte auf alle Premium-Pläne für Autoren, deren Werke in thematische Literatursammlungen aufgenommen wurden. Kontaktieren Sie uns, um einen einzigartigen Promo-Code zu erhalten!