Auswahl der wissenschaftlichen Literatur zum Thema „MIS devices“
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Zeitschriftenartikel zum Thema "MIS devices"
Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough und Wilson Z. Ray. „Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices: radiographic assessment of sagittal segmental and pelvic parameters“. Neurosurgical Focus 43, Nr. 2 (August 2017): E10. http://dx.doi.org/10.3171/2017.5.focus17197.
Der volle Inhalt der QuelleAl-Begg, S. M., S. H. Saeed und A. S. Al-Rawas. „Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs“. Journal of Ovonic Research 19, Nr. 4 (Juli 2023): 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.
Der volle Inhalt der QuelleZhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan et al. „Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric“. Electronics 11, Nr. 6 (13.03.2022): 895. http://dx.doi.org/10.3390/electronics11060895.
Der volle Inhalt der QuelleEngstrom, O., und A. Carlsson-Gylemo. „MIS Devices for optical information processing“. IEEE Transactions on Electron Devices 32, Nr. 11 (November 1985): 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.
Der volle Inhalt der QuelleMoriwaki, M. M., J. R. Srour, L. F. Lou und J. R. Waterman. „Ionizing radiation effects on HgCdTe MIS devices“. IEEE Transactions on Nuclear Science 37, Nr. 6 (1990): 2034–41. http://dx.doi.org/10.1109/23.101226.
Der volle Inhalt der QuelleTardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis und G. Post. „Long-term stability of InP MIS devices“. Applied Surface Science 50, Nr. 1-4 (Juni 1991): 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.
Der volle Inhalt der QuelleHynecek, Jaroslav. „4455739 Process protection for individual device gates on large area MIS devices“. Microelectronics Reliability 25, Nr. 1 (Januar 1985): 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.
Der volle Inhalt der QuellePreuveneers, D., und Y. Berbers. „Encoding Semantic Awareness in Resource-Constrained Devices“. IEEE Intelligent Systems 23, Nr. 2 (März 2008): 26–33. http://dx.doi.org/10.1109/mis.2008.25.
Der volle Inhalt der QuelleRagusa, Edoardo, Christian Gianoglio, Rodolfo Zunino und Paolo Gastaldo. „Image Polarity Detection on Resource-Constrained Devices“. IEEE Intelligent Systems 35, Nr. 6 (01.11.2020): 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.
Der volle Inhalt der QuelleHsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong und Yue-Ming Hsin. „AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer“. MRS Advances 3, Nr. 3 (28.12.2017): 143–46. http://dx.doi.org/10.1557/adv.2017.626.
Der volle Inhalt der QuelleDissertationen zum Thema "MIS devices"
Torres, Almarza Ignacio. „Interfacial effects in polymer MIS devices“. Thesis, Bangor University, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409836.
Der volle Inhalt der QuelleThomas, Nicholas John. „GaAs/Langmuir-Blodgett film MIS devices“. Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6829/.
Der volle Inhalt der QuelleClifton, Paul Alan. „Characterisation of silicon MIS negative resistance devices“. Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6434/.
Der volle Inhalt der QuelleHolman, Brian. „The electrical characterization of tantalum capacitors as MIS devices“. Connect to this title online, 2008. http://etd.lib.clemson.edu/documents/1219849377/.
Der volle Inhalt der QuelleLancaster, Janet. „Organic MIS Devices Based on a High-k Dielectric“. Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.
Der volle Inhalt der QuelleEvans, N. J. „Influence of gases on the electrical properties of MIS devices“. Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6866/.
Der volle Inhalt der QuelleUsman, Muhammad. „Impact of Ionizing Radiation on 4H-SiC Devices“. Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.
Der volle Inhalt der QuelleQC 20120117
Noborio, Masato. „Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits“. 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Der volle Inhalt der QuelleFontaine, Lya. „Développement de briques technologiques pour la réalisation de composants de puissance MOS sur diamant“. Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30060.
Der volle Inhalt der QuelleOne of the challenges of our time is related to the production and management of electrical energy. In this context, the improvement of power semiconductor devices is one of the keys to meet this challenge. Most of current power devices are made of silicon. However, the demands of power electronics applications in terms of voltage withstand, power density, temperature and switching frequency are becoming higher. The intrinsic physical properties of wide-bandgap semiconductors (SiC, GaN, Diamond) make it possible to consider the design and fabrication of power devices that are much more efficient than all-silicon structures. In this context, our work focuses on the development and optimization of technological steps enabling the realization of diamond MOS power devices. They were carried out as part of the ANR project MOVeToDIAM, coordinated by LAAS-CNRS, in the continuity of the work on diamond made in the laboratory since 2005. Diamond is therefore a wide bandgap semiconductor (Eg = 5.5 eV) particularly suitable for high power and high temperature applications. It has high carrier mobilities (2200cm2/Vs for electrons and 2050cm2/Vs for holes), allowing the passage of high current densities, a high breaking field (Ec ~ 10 MV/cm) and a strong thermal conductivity (lambda ~ 20 W.cm-1.K-1) facilitating heat dissipation. However, despite these promising properties, many technological locks are still to be lifted in order to lead to the fabrication of power devices on diamond. We have therefore studied and optimized several critical technological steps to overcome the problems caused by the small sample size (2x2mm2 to 3x3mm2). The photolithography steps were developed and optimized for two types of resin (positive AZ4999 and negative NLOF 203) using a Spray-Coater and a direct laser writing machine, thus greatly improving the minimal resolution, up to 1 µm, of the patterns defined on the samples. In order to characterize ohmic contacts, we have developed two test structures: the Transmission Line Method (TLM) and the Circular TLM (Circular Transmission Line Method). If the realization of ohmic contacts on P-type diamond is mastered, the specific contact resistance must be further improved to limit its impact on the electrical performance of the devices. In addition, according to the literature, no ohmic contact has been made on N-type diamond, because of the difficulty of achieving high levels of doping, which remains a major obstacle to the development of the diamond industry. The fabrication of ohmic contacts on P-type and N-type diamond has been optimized on different samples.[...]
Pace, Bedetti Horacio Martin. „The effect of "Postural Freedom" in laparoscopic surgery“. Doctoral thesis, Universitat Politècnica de València, 2019. http://hdl.handle.net/10251/122312.
Der volle Inhalt der Quelle[CAT] La cirurgia laparoscòpia està considerada un dels principals avanços quirúrgics en les últimes dècades. Aquesta tècnica ha demostrat nombrosos avantatges comparats amb la cirurgia convencional oberta i ha sigut extensament usada per a processos quirúrgics en l'àrea abdominal. Per al pacient, la cirurgia laparoscòpica suposa diversos avantatges, com per exemple menor dolor post operatiu, temps de recuperació menors, menor risc d'infecció, o reducció del trauma. Per al cirurgià en canvi, la situació és completament diferent, aquesta pràctica requereix major esforç, concentració i estrés mental que la pràctica convencional oberta. A més força al cirurgià a adoptar posicions no-neutres en falanges, mans, nines, i braços. Aquestes postures no-neutres són la principal causa de fatiga muscular i augmenten el risc de problemes musculo-esquelètics. Aquests problemes han sigut àmpliament estudiats per diferents equips d'investigació, els quals estan tractant de millorar l'experiència del cirurgià en el quiròfan. L'enfocament utilitzat en aquest estudi és diferent de l'utilitzat anteriorment per la majoria d'aquests equips, els quals solen proposes solucions basades en canvis ergonòmics amb la intenció de millorar la geometria del mànec de pistola convencional, ja que es considera ergonòmicament deficient. El problema amb aquest enfocament, és que les deficiències no es troben únicament en el mànec, sinó en la utilització d'un punt d'entrada fix que força als cirurgians a mantindre posicions desfavorables. En aquest treball, s'introdueix el concepte "Llibertat Postural" en l'àmbit de la cirurgia, aquest es basa en la hipòtesi que, si les eines no forçaren la posició dels cirurgians, aquests mantindrien posicions més favorables i pròximes al rang de posicions neutres durant els processos laparoscòpics. Els beneficis d'aquest concepte han sigut demostrats per mitjà d'anàlisi de moviment i de electromiografía de superfície, els quals indiquen que la "Llibertat Postural" és causant d'un clar augment de les posicions neutres i de la reducció de la fatiga muscular, i han sigut testats per cirurgians en entorns simulats, els quals troben beneficiós utilitzar la "Llibertat Postural" com a característica base d'aquest nou disseny d'eina laparoscòpica. En la secció final d'aquest treball es proposa un disseny que implementa el concepte de llibertat postura amb el qual es reduiria la fatiga muscular i els problemes *musculo esquelètics associats a la pràctica laparoscòpica. Aquest disseny té la característica d'actuar com una nova secció del braç, sent una articulació que suporta els girs i grans desplaçaments que normalment han de desenvolupar els braços del cirurgià. A més, aquesta solució és econòmica i fàcil de fabricar, la qual cosa permetria el seu ús per cirurgians de tot el món.
[EN] Laparoscopic surgery is considered one of the main surgical advances in the last decades, this technique has demonstrated numerous advantages compared to open conventional surgery and it is widely used in abdominal procedures around the world. For the patient, laparoscopic surgery suppose less post-operative pain, shorter recovery time, lower risk of infection, and reduction of the trauma among other benefits. For the surgeon, the situation is completely different, this practice requires more effort, concentration and mental stress than conventional open procedures. It forces the surgeon to adopt non-neutral postures with phalanges, hands, wrists, and arms being this non-neutral postures the main cause of muscular fatigue and high risk of musculoskeletal disorders. The poor ergonomic postures accelerate muscle fatigue and pain because, outside the neutral range, muscles require more energy to generate the same contractile force than in neutral position. This increase of muscular fatigue is associated with the potential to commit errors that may harm the patient during the surgery. Because this problem is widely studied and different research centers are already trying to improve their surgeons experience in the operation room, the approach used during this work is different than most of the ones presented in previous works. Generally, the solutions proposed are based on ergonomic changes in the handle shape of the instrument, because the conventional pistol-grip handle is considered ergonomically poor. But the problem is not only in the shape of the handle but also in the fixed point of entrance that force the positions for the surgeon despite the handle¿s shape. In this work, the concept of postural freedom in laparoscopic surgery is introduced and evaluated. The postural freedom concept is based on the hypothesis that the surgeon involuntarily would maintain neutral postures if the instrument does not force him or her to reach extreme position with the upper limbs. The benefits of this concept has been demonstrated, by means of electromyography and motion capture. It reduces the localized muscular fatigue and increases the number of neutral postures during laparoscopic simulations. In the final section it is proposed a design that implements the postural freedom concept with, according on the results, the potential to reduce the localized muscular fatigue and the musculoskeletal problems associated to the practice. The design proposed here acts as a new section on the arm, being an articulation that support the turns and big displacements that currently suffer the surgeon¿s body. The solution is affordable and easy to manufacture and could be used by surgeons worldwide.
Pace Bedetti, HM. (2019). The effect of "Postural Freedom" in laparoscopic surgery [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/122312
TESIS
Bücher zum Thema "MIS devices"
Esposito, Peter M. Sean mis discipulos. Cincinnati, Ohio: RCL Benziger, 2014.
Den vollen Inhalt der Quelle findenFranke, Jörg, Hrsg. Three-Dimensional Molded Interconnect Devices (3D-MID). München: Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.3139/9781569905524.
Der volle Inhalt der QuelleZheng, L. Electroluminescence of mid-infrared III-V devices. Manchester: UMIST, 1997.
Den vollen Inhalt der Quelle findenFranke, Jörg. Three-Dimensional Molded Interconnect Devices (3D-MID). München, Germany: Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.1007/978-1-56990-552-4.
Der volle Inhalt der QuelleKawasaki, Tōru, Takeo Nakagawa und Tetsuo Yumoto. MID (shashutsu seikei kairo buhin). Tōkyō: Shīemushī, 1997.
Den vollen Inhalt der Quelle findenNiederhuber, John E. Totally Implantable Venous Access Devices: Management in Mid- and Long-term Clinical Setting. Milano: Springer Milan, 2012.
Den vollen Inhalt der Quelle findenInternational Workshop on Advanced Motion Control (4th 1996 Mie University). AMC '96-Mie: 1996 4th International Workshop on Advanced Motion Control : proceedings, March 18-21, 1996, Mie University, Tsu-City, Mie-Pref., Japan. [New York]: Institute of Electrical and Electronics Engineers, 1996.
Den vollen Inhalt der Quelle findenJörg, Franke. Three-dimensional molded interconnect devices (3D-MID): Materials, manufacturing, assembly, and applications for injection molded circuit carriers. Munich: Hanser Publishers, 2014.
Den vollen Inhalt der Quelle findenSturdivant, Rick. Microwave and millimeter-wave electronic packaging. Boston: Artech House, 2014.
Den vollen Inhalt der Quelle findenDitzian, Jan L. MCS 2 database embedded training: Procedural findings for command and control systems. Alexandria, VA: U.S. Army Research Institute for the Behavioral and Social Sciences, 1989.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "MIS devices"
Lee-Ong, Alembert, und Alfred Allen Buenafe. „Instrumentations and Access Devices“. In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 51–59. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_9.
Der volle Inhalt der QuelleFaraz, Ali, und Shahram Payandeh. „Automated Devices“. In Engineering Approaches to Mechanical and Robotic Design for Minimally Invasive Surgery (MIS), 57–71. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-4409-8_4.
Der volle Inhalt der QuelleLile, Derek L. „Interfacial Constraints on III-V Compound MIS Devices“. In Physics and Chemistry of III-V Compound Semiconductor Interfaces, 327–401. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_6.
Der volle Inhalt der QuelleLandi, Alessandro, Fabrizio Gregori, Nicola Marotta und Roberto Delfini. „New Techniques and MIS: The Interspinous Fixation Devices“. In Modern Thoraco-Lumbar Implants for Spinal Fusion, 127–42. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-60143-4_11.
Der volle Inhalt der QuelleMabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze und M. C. Petty. „Fabrication and Characterisation of MIS Organic Memory Devices“. In Advances in Science and Technology, 474–79. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908158-11-7.474.
Der volle Inhalt der QuelleBurroughes, J. H., und R. H. Friend. „Field-Induced Charges in Polyacetylene MIS and MISFET Devices“. In New Horizons in Low-Dimensional Electron Systems, 377–400. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_25.
Der volle Inhalt der QuelleLawenko, Michael M., und Angelica Feliz Versoza-Delgado. „Image Systems in Endo-Laparoscopic Surgery“. In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 7–14. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_2.
Der volle Inhalt der QuelleSlacheva, G., und I. Yanchev. „Path-Integral Calculation of the Electron Density of States in Mis-Structures“. In Devices Based on Low-Dimensional Semiconductor Structures, 189–98. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0289-3_14.
Der volle Inhalt der QuelleTralle, I. E. „Dynamic Quantum Wells and Quantum Dots in Mis-Microstructure with Periodic Field Electrodes“. In Frontiers in Nanoscale Science of Micron/Submicron Devices, 495–505. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_35.
Der volle Inhalt der QuelleLee-Ong, Alembert, und Alfred Allen Buenafe. „Operating Room Setup and Patient Positioning in MIS“. In Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 61–67. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_10.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "MIS devices"
Alba-Martin, M., T. Firmager, J. J. Atherton, M. C. Rosamond, A. J. Gallant, M. C. Petty, A. Al Ghaferi et al. „Single-walled nanotube MIS memory devices“. In 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144530.
Der volle Inhalt der QuelleMiranda, E. „Failure analysis of MIM and MIS structures using spatial statistics“. In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481384.
Der volle Inhalt der QuelleVaquero-Melchor, Diego, Jorge García-Hospital, Ana M. Bernardos, Juan A. Besada und José R. Casar. „Holo-mis“. In MobileHCI '18: 20th International Conference on Human-Computer Interaction with Mobile Devices and Services. New York, NY, USA: ACM, 2018. http://dx.doi.org/10.1145/3236112.3236165.
Der volle Inhalt der QuelleMaeda, Narihiko, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki und Takashi Kobayashi. „Insulator engineering in GaN-based MIS HFETs“. In Integrated Optoelectronic Devices 2007, herausgegeben von Hadis Morkoc und Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.703659.
Der volle Inhalt der QuelleRziga, Faten Ouaja, Khaoula Mbarek, Sami Ghedira und Kamel Besbes. „A general overview of memristor devices“. In 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273019.
Der volle Inhalt der QuelleMbarek, Khaoula, Faten Ouaja Rziga, Sami Ghedira und Kamel Besbes. „Characterization, and modeling of memristor devices“. In 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273032.
Der volle Inhalt der QuelleKorolevych, Lyubomyr, und Alexander Borisov. „Cerium dioxide thin films in silicon MIS devices“. In 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783344.
Der volle Inhalt der QuelleMarino, Fabio Alessio, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You et al. „Breakdown investigation in GaN-based MIS-HEMT devices“. In ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948839.
Der volle Inhalt der QuelleLee, Tae-Seok, Y. T. Jeoung, Hyun Kyu Kim, Jae Mook Kim, Jinhan Song, S. Y. Ann, Ji Y. Lee et al. „Electrical properties of MIS devices on CdZnTe/HgCdTe“. In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, herausgegeben von Bjorn F. Andresen und Marija Strojnik. SPIE, 1998. http://dx.doi.org/10.1117/12.328083.
Der volle Inhalt der QuelleRawal, Yaksh, Prashanth P. Manik, Piyush Bhatt, Anoop C., Saurabh Lodha, Swaroop Ganguly, Maryam Shojaei Baghini und Debashree Burman. „Performance comparison of MIM and MIS diodes for energy harvesting applications“. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061102.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "MIS devices"
Robinson, Dr Peter. PR761-235100-R01 Minimally Intrusive Multi Sensor for Inline Deployment. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), Juli 2024. http://dx.doi.org/10.55274/r0000075.
Der volle Inhalt der QuelleChannabasappa, S., W. De Ketelaere und E. Nechamkin. Management Event Management Information Base (MIB) for PacketCable- and IPCablecom-Compliant Devices. RFC Editor, April 2009. http://dx.doi.org/10.17487/rfc5428.
Der volle Inhalt der QuelleByer, Robert L. Diffusion-Bonded Nonlinear Materials for Practical Quasi-Phase-Matched Mid-IR Devices. Fort Belvoir, VA: Defense Technical Information Center, April 1996. http://dx.doi.org/10.21236/ada307177.
Der volle Inhalt der QuelleFitzgerald, Eugene A. Device Quality, High Mis-Matched Semi Conductor Materials Grown on Si Substrates Using Unique Dislocation Engineering. Fort Belvoir, VA: Defense Technical Information Center, Juni 2002. http://dx.doi.org/10.21236/ada414436.
Der volle Inhalt der QuelleSt., M., Hrsg. DOCSIS Cable Device MIB Cable Device Management Information Base for DOCSIS compliant Cable Modems and Cable Modem Termination Systems. RFC Editor, August 1999. http://dx.doi.org/10.17487/rfc2669.
Der volle Inhalt der QuelleCALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical IGES Transfer Using: Computing Devices' Data. MIL-D-28000A (IGES). Quick Short Test Report. Fort Belvoir, VA: Defense Technical Information Center, November 1993. http://dx.doi.org/10.21236/ada312857.
Der volle Inhalt der QuelleCALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical Illustration Transfer Using: Computing Devices Canada's Data MIL-D-28OOOA (IGES) Quick Short Test Report. Fort Belvoir, VA: Defense Technical Information Center, März 1994. http://dx.doi.org/10.21236/ada312354.
Der volle Inhalt der QuelleBIZIKOEVA, L. S., und M. I. BALIKOEVA. SOMERSET MAUGHAM - MASTER OF CREATING CHARACTERS. Science and Innovation Center Publishing House, 2021. http://dx.doi.org/10.12731/2077-1770-2021-13-4-2-111-121.
Der volle Inhalt der QuelleZanker. L52361 Smart USM Diagnostics - Phase I. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), April 2007. http://dx.doi.org/10.55274/r0010938.
Der volle Inhalt der QuelleDeSantis, John, und Jeffery Roesler. Performance Evaluation of Stabilized Support Layers for Concrete Pavements. Illinois Center for Transportation, Februar 2022. http://dx.doi.org/10.36501/0197-9191/22-003.
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